CN1118517A - 用含酸流体处理半导体材料的方法 - Google Patents

用含酸流体处理半导体材料的方法 Download PDF

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Publication number
CN1118517A
CN1118517A CN95104759A CN95104759A CN1118517A CN 1118517 A CN1118517 A CN 1118517A CN 95104759 A CN95104759 A CN 95104759A CN 95104759 A CN95104759 A CN 95104759A CN 1118517 A CN1118517 A CN 1118517A
Authority
CN
China
Prior art keywords
acid
phosphorus pentoxide
containing fluid
added
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95104759A
Other languages
English (en)
Chinese (zh)
Inventor
马克西来利安·斯塔德勒
冈特·施瓦布
彼得·罗迈德
加布里埃尔·特里弗纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of CN1118517A publication Critical patent/CN1118517A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CN95104759A 1994-04-28 1995-04-22 用含酸流体处理半导体材料的方法 Pending CN1118517A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4414925.5 1994-04-28
DE4414925A DE4414925A1 (de) 1994-04-28 1994-04-28 Verfahren zur Behandlung von Halbleitermaterial mit einer säurehaltigen Flüssigkeit

Publications (1)

Publication Number Publication Date
CN1118517A true CN1118517A (zh) 1996-03-13

Family

ID=6516731

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95104759A Pending CN1118517A (zh) 1994-04-28 1995-04-22 用含酸流体处理半导体材料的方法

Country Status (7)

Country Link
US (1) US5587046A (enExample)
EP (1) EP0681318B1 (enExample)
JP (1) JP2700778B2 (enExample)
KR (1) KR0165730B1 (enExample)
CN (1) CN1118517A (enExample)
DE (2) DE4414925A1 (enExample)
TW (1) TW284902B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3772456B2 (ja) * 1997-04-23 2006-05-10 三菱電機株式会社 太陽電池及びその製造方法、半導体製造装置
JP3337622B2 (ja) * 1997-07-16 2002-10-21 松下電器産業株式会社 選択的エッチング液及びそのエッチング液を用いた半導体装置の製造方法
DE19962136A1 (de) 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
DE102007061687B4 (de) * 2007-12-19 2010-04-29 Cpi Chemiepark Institut Gmbh Verfahren zum Mattierungsätzen von Siliziumsubstraten und Ätzmischung zur Durchführung des Verfahrens
US8940178B2 (en) * 2009-03-18 2015-01-27 E I Du Pont De Nemours And Company Textured silicon substrate and method
US8182698B2 (en) * 2010-06-30 2012-05-22 Arr-Maz Custom Chemicals, Inc. Method for improving gypsum/phosphoric acid slurry filtration using carboxymethyl cellulose

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425684A1 (de) * 1974-05-28 1975-12-11 Ibm Deutschland Verfahren zum aetzen von silicium enthaltenden materialien
US3923567A (en) * 1974-08-09 1975-12-02 Silicon Materials Inc Method of reclaiming a semiconductor wafer
JPS55154452A (en) * 1979-05-18 1980-12-02 Seiko Kakoki Kk Concentration controlling method of halogen acid salt

Also Published As

Publication number Publication date
EP0681318B1 (de) 1996-11-27
KR0165730B1 (ko) 1999-02-01
DE59500050D1 (de) 1997-01-09
TW284902B (enExample) 1996-09-01
US5587046A (en) 1996-12-24
DE4414925A1 (de) 1995-11-02
KR950030256A (ko) 1995-11-24
JP2700778B2 (ja) 1998-01-21
JPH0853780A (ja) 1996-02-27
EP0681318A1 (de) 1995-11-08

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Legal Events

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Applicant after: Wacker Siltronic Gesellschaft fuer Halbleitermaterialien MbH

Applicant before: Wacker Siltronic Gesellschaft Fuer, Halbleitermaterialien mbH

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: WACKER SILTRNOIC GESELLSCHAFT FUER HALBLEITERMATERIALIEN MBH TO: WACKER SILICON ELECTRONIC SEMICONDUCTOR MATERIAL AG

C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication