CN111834464A - 屏蔽栅场效应晶体管及其形成方法、半导体器件 - Google Patents
屏蔽栅场效应晶体管及其形成方法、半导体器件 Download PDFInfo
- Publication number
- CN111834464A CN111834464A CN202010964286.0A CN202010964286A CN111834464A CN 111834464 A CN111834464 A CN 111834464A CN 202010964286 A CN202010964286 A CN 202010964286A CN 111834464 A CN111834464 A CN 111834464A
- Authority
- CN
- China
- Prior art keywords
- layer
- dielectric layer
- trench
- electrode
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000005669 field effect Effects 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000007772 electrode material Substances 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 239000011800 void material Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005549 size reduction Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010964286.0A CN111834464B (zh) | 2020-09-15 | 2020-09-15 | 屏蔽栅场效应晶体管及其形成方法、半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010964286.0A CN111834464B (zh) | 2020-09-15 | 2020-09-15 | 屏蔽栅场效应晶体管及其形成方法、半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111834464A true CN111834464A (zh) | 2020-10-27 |
CN111834464B CN111834464B (zh) | 2020-12-25 |
Family
ID=72919005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010964286.0A Active CN111834464B (zh) | 2020-09-15 | 2020-09-15 | 屏蔽栅场效应晶体管及其形成方法、半导体器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111834464B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070114600A1 (en) * | 2005-08-31 | 2007-05-24 | Franz Hirler | Trench transistor and method for fabricating a trench transistor |
US20100044785A1 (en) * | 2008-01-15 | 2010-02-25 | Murphy James J | High aspect ratio trench structures with void-free fill material |
CN105244374A (zh) * | 2015-08-31 | 2016-01-13 | 上海华虹宏力半导体制造有限公司 | 具有屏蔽栅的沟槽栅mosfet的制造方法 |
CN110993502A (zh) * | 2019-12-30 | 2020-04-10 | 广州粤芯半导体技术有限公司 | 屏蔽栅沟槽功率器件的制造方法 |
-
2020
- 2020-09-15 CN CN202010964286.0A patent/CN111834464B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070114600A1 (en) * | 2005-08-31 | 2007-05-24 | Franz Hirler | Trench transistor and method for fabricating a trench transistor |
US20100044785A1 (en) * | 2008-01-15 | 2010-02-25 | Murphy James J | High aspect ratio trench structures with void-free fill material |
CN105244374A (zh) * | 2015-08-31 | 2016-01-13 | 上海华虹宏力半导体制造有限公司 | 具有屏蔽栅的沟槽栅mosfet的制造方法 |
CN110993502A (zh) * | 2019-12-30 | 2020-04-10 | 广州粤芯半导体技术有限公司 | 屏蔽栅沟槽功率器件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN111834464B (zh) | 2020-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20240274684A1 (en) | Semiconductor structure and fabrication method thereof | |
US7355242B2 (en) | Semiconductor device | |
KR100610496B1 (ko) | 채널용 핀 구조를 가지는 전계효과 트랜지스터 소자 및 그제조방법 | |
CN111681963B (zh) | 一种屏蔽栅场效应晶体管及其形成方法 | |
CN111739936B (zh) | 一种半导体器件及其形成方法 | |
CN111446157A (zh) | 屏蔽栅场效应晶体管及其形成方法 | |
CN110896053B (zh) | 屏蔽栅场效应晶体管及其形成方法 | |
US20160276439A1 (en) | Output capacitance reduction in power transistors | |
CN111180342B (zh) | 屏蔽栅场效应晶体管及其形成方法 | |
CN113013028A (zh) | 栅间氧化层的形成方法和屏蔽栅沟槽型器件的形成方法 | |
KR20120117127A (ko) | 소자 분리막 구조물 및 그 형성 방법 | |
KR20210117118A (ko) | 반도체 디바이스 및 그 제조 방법 | |
US20010014511A1 (en) | Technique for forming shallow trench isolation structure without corner exposure and resulting structure | |
CN210296385U (zh) | 晶体管 | |
CN111834464B (zh) | 屏蔽栅场效应晶体管及其形成方法、半导体器件 | |
CN210272358U (zh) | 半导体结构及动态随机存储器 | |
CN111180341B (zh) | 屏蔽栅场效应晶体管及其形成方法 | |
KR102600345B1 (ko) | 반도체 전력 소자의 제조 방법 | |
CN211455690U (zh) | 沟槽型功率器件的沟槽栅结构 | |
US11502194B2 (en) | MOSFET manufacturing method | |
CN114420562A (zh) | 屏蔽栅场效应晶体管及其形成方法 | |
CN111933712B (zh) | 沟槽型场效应晶体管及其形成方法 | |
CN112466933B (zh) | 一种屏蔽栅场效应晶体管及其形成方法 | |
CN113517341A (zh) | 沟槽型功率器件的沟槽栅结构及其制造方法 | |
CN117542795B (zh) | 半导体器件及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 518 Shaoxing Road, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Address before: 518 Shaoxing Road, Zhejiang Province Patentee before: SMIC manufacturing (Shaoxing) Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220705 Address after: No. 518, Linjiang Road, Gaobu Town, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Patentee after: SMIC international integrated circuit manufacturing (Shanghai) Co., Ltd Address before: 518 Shaoxing Road, Zhejiang Province Patentee before: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. |
|
TR01 | Transfer of patent right |