CN111742411B - 双向晶闸管器件 - Google Patents
双向晶闸管器件 Download PDFInfo
- Publication number
- CN111742411B CN111742411B CN201980013388.XA CN201980013388A CN111742411B CN 111742411 B CN111742411 B CN 111742411B CN 201980013388 A CN201980013388 A CN 201980013388A CN 111742411 B CN111742411 B CN 111742411B
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- semiconductor layer
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- plane parallel
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18156415 | 2018-02-13 | ||
EP18156415.4 | 2018-02-13 | ||
PCT/EP2019/053560 WO2019158594A1 (en) | 2018-02-13 | 2019-02-13 | Bidirectional thyristor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111742411A CN111742411A (zh) | 2020-10-02 |
CN111742411B true CN111742411B (zh) | 2024-03-08 |
Family
ID=61198738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980013388.XA Active CN111742411B (zh) | 2018-02-13 | 2019-02-13 | 双向晶闸管器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11056582B2 (zh) |
EP (1) | EP3766101B1 (zh) |
JP (1) | JP7084501B2 (zh) |
CN (1) | CN111742411B (zh) |
WO (1) | WO2019158594A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4006989B1 (en) | 2020-11-25 | 2024-05-15 | Hitachi Energy Ltd | Bidirectional thyristor device with asymmetric characteristics |
EP4006988B1 (en) | 2020-11-25 | 2024-01-03 | Hitachi Energy Ltd | Bidirectional thyristor device |
EP4007139B1 (en) | 2020-11-25 | 2023-04-05 | Hitachi Energy Switzerland AG | Module comprising a switchable bypass device |
EP4006990B1 (en) * | 2020-11-27 | 2023-04-05 | Hitachi Energy Switzerland AG | Semiconductor device with a side surface having different partial regions |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
JPS54109791A (en) * | 1978-02-16 | 1979-08-28 | Mitsubishi Electric Corp | Emitter short-type thyristor |
JP2003282865A (ja) * | 2002-03-27 | 2003-10-03 | Shindengen Electric Mfg Co Ltd | サイリスタ |
WO2011161097A2 (en) * | 2010-06-21 | 2011-12-29 | Abb Technology Ag | Phase control thyristor with improved pattern of local emitter shorts dots |
CN103594490A (zh) * | 2012-08-13 | 2014-02-19 | 无锡维赛半导体有限公司 | 晶闸管及晶闸管封装件 |
CN107258018A (zh) * | 2014-12-17 | 2017-10-17 | Abb瑞士股份有限公司 | 双向功率半导体器件 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS504435B1 (zh) * | 1970-07-02 | 1975-02-19 | ||
CH622127A5 (zh) * | 1977-12-21 | 1981-03-13 | Bbc Brown Boveri & Cie | |
JP2674641B2 (ja) * | 1986-08-20 | 1997-11-12 | 株式会社東芝 | ゲートターンオフサイリスタ |
DE19721365A1 (de) | 1997-05-22 | 1998-11-26 | Asea Brown Boveri | Beidseitig steuerbarer Thyristor |
JP2004288680A (ja) | 2003-03-19 | 2004-10-14 | Mitsubishi Electric Corp | 圧接型半導体装置 |
-
2019
- 2019-02-13 EP EP19703385.5A patent/EP3766101B1/en active Active
- 2019-02-13 JP JP2020565549A patent/JP7084501B2/ja active Active
- 2019-02-13 US US16/969,773 patent/US11056582B2/en active Active
- 2019-02-13 WO PCT/EP2019/053560 patent/WO2019158594A1/en unknown
- 2019-02-13 CN CN201980013388.XA patent/CN111742411B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
JPS54109791A (en) * | 1978-02-16 | 1979-08-28 | Mitsubishi Electric Corp | Emitter short-type thyristor |
JP2003282865A (ja) * | 2002-03-27 | 2003-10-03 | Shindengen Electric Mfg Co Ltd | サイリスタ |
WO2011161097A2 (en) * | 2010-06-21 | 2011-12-29 | Abb Technology Ag | Phase control thyristor with improved pattern of local emitter shorts dots |
CN103594490A (zh) * | 2012-08-13 | 2014-02-19 | 无锡维赛半导体有限公司 | 晶闸管及晶闸管封装件 |
CN107258018A (zh) * | 2014-12-17 | 2017-10-17 | Abb瑞士股份有限公司 | 双向功率半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
US11056582B2 (en) | 2021-07-06 |
US20200411674A1 (en) | 2020-12-31 |
CN111742411A (zh) | 2020-10-02 |
EP3766101B1 (en) | 2021-07-21 |
JP7084501B2 (ja) | 2022-06-14 |
WO2019158594A1 (en) | 2019-08-22 |
JP2021514547A (ja) | 2021-06-10 |
EP3766101A1 (en) | 2021-01-20 |
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SE01 | Entry into force of request for substantive examination | ||
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Swiss Baden Applicant after: Hitachi energy Switzerland AG Address before: Swiss Baden Applicant before: ABB grid Switzerland AG |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20240122 Address after: Zurich, SUI Applicant after: Hitachi Energy Co.,Ltd. Country or region after: Switzerland Address before: Swiss Baden Applicant before: Hitachi energy Switzerland AG Country or region before: Switzerland |
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GR01 | Patent grant |