CN111732897A - 用于铜和硅通孔应用的化学机械抛光 - Google Patents
用于铜和硅通孔应用的化学机械抛光 Download PDFInfo
- Publication number
- CN111732897A CN111732897A CN202010125856.7A CN202010125856A CN111732897A CN 111732897 A CN111732897 A CN 111732897A CN 202010125856 A CN202010125856 A CN 202010125856A CN 111732897 A CN111732897 A CN 111732897A
- Authority
- CN
- China
- Prior art keywords
- copper
- alanine
- composition
- cmp
- mechanical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962811874P | 2019-02-28 | 2019-02-28 | |
| US62/811,874 | 2019-02-28 | ||
| US16/752,116 US20200277514A1 (en) | 2019-02-28 | 2020-01-24 | Chemical Mechanical Polishing For Copper And Through Silicon Via Applications |
| US16/752,116 | 2020-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111732897A true CN111732897A (zh) | 2020-10-02 |
Family
ID=69742787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010125856.7A Pending CN111732897A (zh) | 2019-02-28 | 2020-02-27 | 用于铜和硅通孔应用的化学机械抛光 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20200277514A1 (https=) |
| EP (1) | EP3702425A1 (https=) |
| JP (1) | JP7240346B2 (https=) |
| KR (1) | KR20200105431A (https=) |
| CN (1) | CN111732897A (https=) |
| IL (1) | IL272585B2 (https=) |
| SG (1) | SG10202001386VA (https=) |
| TW (1) | TW202039775A (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113789127A (zh) * | 2021-10-20 | 2021-12-14 | 博力思(天津)电子科技有限公司 | 一种硅通孔铜膜抛光液 |
| CN115959779A (zh) * | 2021-10-12 | 2023-04-14 | 中国石油化工股份有限公司 | 循环水系统预膜用组合物及其应用以及循环水系统预膜处理方法 |
| CN116745375A (zh) * | 2020-12-14 | 2023-09-12 | 弗萨姆材料美国有限责任公司 | 用于铜和硅通孔(tsv)的化学机械平面化(cmp) |
| CN118406439A (zh) * | 2024-07-01 | 2024-07-30 | 万华化学集团电子材料有限公司 | 化学机械抛光组合物及其在钨化学机械抛光中的应用 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102878529B1 (ko) * | 2020-01-28 | 2025-10-30 | 후지필름 가부시키가이샤 | 조성물, 기판의 처리 방법 |
| KR20230160334A (ko) * | 2021-03-29 | 2023-11-23 | 엔테그리스, 아이엔씨. | 화학적 기계적 평탄화(cmp)를 위한 현탁액 및 이를 사용하는 방법 |
| TW202546158A (zh) | 2024-02-16 | 2025-12-01 | 美商慧盛材料美國責任有限公司 | 用於金屬化學機械平坦化(cmp)研磨組合物的腐蝕抑制劑 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1842577A (zh) * | 2003-06-06 | 2006-10-04 | 应用材料公司 | 用于抛光导电材料的抛光组合物和方法 |
| CN104250816A (zh) * | 2013-06-27 | 2014-12-31 | 气体产品与化学公司 | 化学机械抛光浆料组合物和将其用于铜和硅通孔应用的方法 |
| CN105295737A (zh) * | 2014-07-25 | 2016-02-03 | 气体产品与化学公司 | 含钴衬底的化学机械抛光(cmp) |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| KR20080033514A (ko) | 2005-08-05 | 2008-04-16 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물 |
| TWI385226B (zh) | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Cmp控股公司 | 用於移除聚合物阻障之研磨漿液 |
| TWI343945B (en) | 2005-12-27 | 2011-06-21 | Hitachi Chemical Co Ltd | Slurry for metal polishing and polishing method of polished film |
| JP2010512657A (ja) | 2006-12-22 | 2010-04-22 | テクノ セミケム シーオー., エルティーディー. | ゼオライトを含有する銅化学機械的研磨組成物 |
| WO2009020625A1 (en) | 2007-08-09 | 2009-02-12 | Planar Solutions, Llc | Copper polishing slurry |
| JPWO2009031389A1 (ja) | 2007-09-03 | 2010-12-09 | Jsr株式会社 | 化学機械研磨用水系分散体およびその調製方法、化学機械研磨用水系分散体を調製するためのキット、ならびに半導体装置の化学機械研磨方法 |
| US7955520B2 (en) | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
| US8435421B2 (en) | 2007-11-27 | 2013-05-07 | Cabot Microelectronics Corporation | Metal-passivating CMP compositions and methods |
| KR101104369B1 (ko) | 2009-04-22 | 2012-01-16 | 주식회사 엘지화학 | 화학적 기계적 연마용 슬러리 |
| WO2010127937A1 (en) | 2009-05-06 | 2010-11-11 | Basf Se | An aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a cmp process |
| JP5646862B2 (ja) | 2009-09-18 | 2014-12-24 | 長興開発科技股▲ふん▼有限公司 | シリコン貫通ビア構造を有する半導体ウェハーの研磨方法、及びそれに使用する研磨組成物 |
| WO2011152966A2 (en) | 2010-06-01 | 2011-12-08 | Applied Materials, Inc. | Chemical planarization of copper wafer polishing |
| US8980122B2 (en) | 2011-07-08 | 2015-03-17 | General Engineering & Research, L.L.C. | Contact release capsule useful for chemical mechanical planarization slurry |
| US9057004B2 (en) | 2011-09-23 | 2015-06-16 | International Business Machines Corporation | Slurry for chemical-mechanical polishing of metals and use thereof |
| US8734665B2 (en) | 2011-10-12 | 2014-05-27 | International Business Machines Corporation | Slurry for chemical-mechanical polishing of copper and use thereof |
| KR101854499B1 (ko) | 2015-04-24 | 2018-05-04 | 삼성에스디아이 주식회사 | 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마방법 |
| US9978609B2 (en) | 2015-04-27 | 2018-05-22 | Versum Materials Us, Llc | Low dishing copper chemical mechanical planarization |
| WO2016195997A1 (en) | 2015-05-29 | 2016-12-08 | Weatherby Michael T | Automated helmet gas bladder maintenance system and method |
| US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| EP3540761B1 (en) * | 2016-11-09 | 2022-01-05 | Fujimi Incorporated | Polishing composition and method for polishing silicon wafer |
| US11401441B2 (en) * | 2017-08-17 | 2022-08-02 | Versum Materials Us, Llc | Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications |
-
2020
- 2020-01-24 US US16/752,116 patent/US20200277514A1/en not_active Abandoned
- 2020-02-10 IL IL272585A patent/IL272585B2/en unknown
- 2020-02-14 SG SG10202001386VA patent/SG10202001386VA/en unknown
- 2020-02-25 TW TW109105985A patent/TW202039775A/zh unknown
- 2020-02-27 KR KR1020200024405A patent/KR20200105431A/ko not_active Ceased
- 2020-02-27 CN CN202010125856.7A patent/CN111732897A/zh active Pending
- 2020-02-27 EP EP20159825.7A patent/EP3702425A1/en not_active Withdrawn
- 2020-02-27 JP JP2020032056A patent/JP7240346B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1842577A (zh) * | 2003-06-06 | 2006-10-04 | 应用材料公司 | 用于抛光导电材料的抛光组合物和方法 |
| CN104250816A (zh) * | 2013-06-27 | 2014-12-31 | 气体产品与化学公司 | 化学机械抛光浆料组合物和将其用于铜和硅通孔应用的方法 |
| US20150132956A1 (en) * | 2013-06-27 | 2015-05-14 | Air Products And Chemicals, Inc. | Chemical Mechanical Polishing Slurry Compositions and Method Using the Same for Copper and Through-Silicon Via Applications |
| CN105295737A (zh) * | 2014-07-25 | 2016-02-03 | 气体产品与化学公司 | 含钴衬底的化学机械抛光(cmp) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116745375A (zh) * | 2020-12-14 | 2023-09-12 | 弗萨姆材料美国有限责任公司 | 用于铜和硅通孔(tsv)的化学机械平面化(cmp) |
| CN115959779A (zh) * | 2021-10-12 | 2023-04-14 | 中国石油化工股份有限公司 | 循环水系统预膜用组合物及其应用以及循环水系统预膜处理方法 |
| CN113789127A (zh) * | 2021-10-20 | 2021-12-14 | 博力思(天津)电子科技有限公司 | 一种硅通孔铜膜抛光液 |
| CN118406439A (zh) * | 2024-07-01 | 2024-07-30 | 万华化学集团电子材料有限公司 | 化学机械抛光组合物及其在钨化学机械抛光中的应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020141137A (ja) | 2020-09-03 |
| IL272585B2 (en) | 2024-08-01 |
| TW202039775A (zh) | 2020-11-01 |
| SG10202001386VA (en) | 2020-09-29 |
| JP7240346B2 (ja) | 2023-03-15 |
| IL272585A (en) | 2020-08-31 |
| IL272585B1 (en) | 2024-04-01 |
| KR20200105431A (ko) | 2020-09-07 |
| EP3702425A1 (en) | 2020-09-02 |
| US20200277514A1 (en) | 2020-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |