KR20200105431A - 구리 및 실리콘 관통 전극 적용을 위한 화학 기계 연마 - Google Patents

구리 및 실리콘 관통 전극 적용을 위한 화학 기계 연마 Download PDF

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Publication number
KR20200105431A
KR20200105431A KR1020200024405A KR20200024405A KR20200105431A KR 20200105431 A KR20200105431 A KR 20200105431A KR 1020200024405 A KR1020200024405 A KR 1020200024405A KR 20200024405 A KR20200024405 A KR 20200024405A KR 20200105431 A KR20200105431 A KR 20200105431A
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KR
South Korea
Prior art keywords
group
chemical mechanical
copper
mechanical polishing
alanine
Prior art date
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Ceased
Application number
KR1020200024405A
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English (en)
Korean (ko)
Inventor
시아오보 시
제임스 알렌 슐뤼터
마크 레오나드 오닐
Original Assignee
버슘머트리얼즈 유에스, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 버슘머트리얼즈 유에스, 엘엘씨 filed Critical 버슘머트리얼즈 유에스, 엘엘씨
Publication of KR20200105431A publication Critical patent/KR20200105431A/ko
Ceased legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/04Heavy metals
    • H01L21/67092
    • H01L21/7684
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020200024405A 2019-02-28 2020-02-27 구리 및 실리콘 관통 전극 적용을 위한 화학 기계 연마 Ceased KR20200105431A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962811874P 2019-02-28 2019-02-28
US62/811,874 2019-02-28
US16/752,116 US20200277514A1 (en) 2019-02-28 2020-01-24 Chemical Mechanical Polishing For Copper And Through Silicon Via Applications
US16/752,116 2020-01-24

Publications (1)

Publication Number Publication Date
KR20200105431A true KR20200105431A (ko) 2020-09-07

Family

ID=69742787

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200024405A Ceased KR20200105431A (ko) 2019-02-28 2020-02-27 구리 및 실리콘 관통 전극 적용을 위한 화학 기계 연마

Country Status (8)

Country Link
US (1) US20200277514A1 (https=)
EP (1) EP3702425A1 (https=)
JP (1) JP7240346B2 (https=)
KR (1) KR20200105431A (https=)
CN (1) CN111732897A (https=)
IL (1) IL272585B2 (https=)
SG (1) SG10202001386VA (https=)
TW (1) TW202039775A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102878529B1 (ko) * 2020-01-28 2025-10-30 후지필름 가부시키가이샤 조성물, 기판의 처리 방법
EP4259736A4 (en) * 2020-12-14 2024-11-20 Versum Materials US, LLC Chemical mechanical planarization (cmp) for copper and through-silicon via (tsv)
KR20230160334A (ko) * 2021-03-29 2023-11-23 엔테그리스, 아이엔씨. 화학적 기계적 평탄화(cmp)를 위한 현탁액 및 이를 사용하는 방법
CN115959779A (zh) * 2021-10-12 2023-04-14 中国石油化工股份有限公司 循环水系统预膜用组合物及其应用以及循环水系统预膜处理方法
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
TW202546158A (zh) 2024-02-16 2025-12-01 美商慧盛材料美國責任有限公司 用於金屬化學機械平坦化(cmp)研磨組合物的腐蝕抑制劑
CN118406439B (zh) * 2024-07-01 2024-10-18 万华化学集团电子材料有限公司 化学机械抛光组合物及其在钨化学机械抛光中的应用

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SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
KR20070104479A (ko) * 2003-06-06 2007-10-25 어플라이드 머티어리얼스, 인코포레이티드 전도성 물질을 폴리싱하기 위한 폴리싱 조성물 및 방법
KR20080033514A (ko) 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
TWI385226B (zh) 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
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Also Published As

Publication number Publication date
JP2020141137A (ja) 2020-09-03
IL272585B2 (en) 2024-08-01
TW202039775A (zh) 2020-11-01
SG10202001386VA (en) 2020-09-29
JP7240346B2 (ja) 2023-03-15
IL272585A (en) 2020-08-31
IL272585B1 (en) 2024-04-01
EP3702425A1 (en) 2020-09-02
US20200277514A1 (en) 2020-09-03
CN111732897A (zh) 2020-10-02

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