TW202039775A - 用於銅及貫穿矽通孔應用的化學機械研磨 - Google Patents

用於銅及貫穿矽通孔應用的化學機械研磨 Download PDF

Info

Publication number
TW202039775A
TW202039775A TW109105985A TW109105985A TW202039775A TW 202039775 A TW202039775 A TW 202039775A TW 109105985 A TW109105985 A TW 109105985A TW 109105985 A TW109105985 A TW 109105985A TW 202039775 A TW202039775 A TW 202039775A
Authority
TW
Taiwan
Prior art keywords
group
copper
cmp
alanine
composition
Prior art date
Application number
TW109105985A
Other languages
English (en)
Chinese (zh)
Inventor
曉波 史
詹姆士艾倫 史魯特
馬克李納德 歐尼爾
Original Assignee
美商慧盛材料美國責任有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商慧盛材料美國責任有限公司 filed Critical 美商慧盛材料美國責任有限公司
Publication of TW202039775A publication Critical patent/TW202039775A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW109105985A 2019-02-28 2020-02-25 用於銅及貫穿矽通孔應用的化學機械研磨 TW202039775A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962811874P 2019-02-28 2019-02-28
US62/811,874 2019-02-28
US16/752,116 US20200277514A1 (en) 2019-02-28 2020-01-24 Chemical Mechanical Polishing For Copper And Through Silicon Via Applications
US16/752,116 2020-01-24

Publications (1)

Publication Number Publication Date
TW202039775A true TW202039775A (zh) 2020-11-01

Family

ID=69742787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109105985A TW202039775A (zh) 2019-02-28 2020-02-25 用於銅及貫穿矽通孔應用的化學機械研磨

Country Status (8)

Country Link
US (1) US20200277514A1 (https=)
EP (1) EP3702425A1 (https=)
JP (1) JP7240346B2 (https=)
KR (1) KR20200105431A (https=)
CN (1) CN111732897A (https=)
IL (1) IL272585B2 (https=)
SG (1) SG10202001386VA (https=)
TW (1) TW202039775A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102878529B1 (ko) * 2020-01-28 2025-10-30 후지필름 가부시키가이샤 조성물, 기판의 처리 방법
EP4259736A4 (en) * 2020-12-14 2024-11-20 Versum Materials US, LLC Chemical mechanical planarization (cmp) for copper and through-silicon via (tsv)
KR20230160334A (ko) * 2021-03-29 2023-11-23 엔테그리스, 아이엔씨. 화학적 기계적 평탄화(cmp)를 위한 현탁액 및 이를 사용하는 방법
CN115959779A (zh) * 2021-10-12 2023-04-14 中国石油化工股份有限公司 循环水系统预膜用组合物及其应用以及循环水系统预膜处理方法
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
TW202546158A (zh) 2024-02-16 2025-12-01 美商慧盛材料美國責任有限公司 用於金屬化學機械平坦化(cmp)研磨組合物的腐蝕抑制劑
CN118406439B (zh) * 2024-07-01 2024-10-18 万华化学集团电子材料有限公司 化学机械抛光组合物及其在钨化学机械抛光中的应用

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
KR20070104479A (ko) * 2003-06-06 2007-10-25 어플라이드 머티어리얼스, 인코포레이티드 전도성 물질을 폴리싱하기 위한 폴리싱 조성물 및 방법
KR20080033514A (ko) 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
TWI385226B (zh) 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
TWI343945B (en) 2005-12-27 2011-06-21 Hitachi Chemical Co Ltd Slurry for metal polishing and polishing method of polished film
JP2010512657A (ja) 2006-12-22 2010-04-22 テクノ セミケム シーオー．， エルティーディー． ゼオライトを含有する銅化学機械的研磨組成物
WO2009020625A1 (en) 2007-08-09 2009-02-12 Planar Solutions, Llc Copper polishing slurry
JPWO2009031389A1 (ja) 2007-09-03 2010-12-09 Jsr株式会社 化学機械研磨用水系分散体およびその調製方法、化学機械研磨用水系分散体を調製するためのキット、ならびに半導体装置の化学機械研磨方法
US7955520B2 (en) 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8435421B2 (en) 2007-11-27 2013-05-07 Cabot Microelectronics Corporation Metal-passivating CMP compositions and methods
KR101104369B1 (ko) 2009-04-22 2012-01-16 주식회사 엘지화학 화학적 기계적 연마용 슬러리
WO2010127937A1 (en) 2009-05-06 2010-11-11 Basf Se An aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a cmp process
JP5646862B2 (ja) 2009-09-18 2014-12-24 長興開発科技股▲ふん▼有限公司 シリコン貫通ビア構造を有する半導体ウェハーの研磨方法、及びそれに使用する研磨組成物
WO2011152966A2 (en) 2010-06-01 2011-12-08 Applied Materials, Inc. Chemical planarization of copper wafer polishing
US8980122B2 (en) 2011-07-08 2015-03-17 General Engineering & Research, L.L.C. Contact release capsule useful for chemical mechanical planarization slurry
US9057004B2 (en) 2011-09-23 2015-06-16 International Business Machines Corporation Slurry for chemical-mechanical polishing of metals and use thereof
US8734665B2 (en) 2011-10-12 2014-05-27 International Business Machines Corporation Slurry for chemical-mechanical polishing of copper and use thereof
US8974692B2 (en) * 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
KR101854499B1 (ko) 2015-04-24 2018-05-04 삼성에스디아이 주식회사 구리 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법
US9978609B2 (en) 2015-04-27 2018-05-22 Versum Materials Us, Llc Low dishing copper chemical mechanical planarization
WO2016195997A1 (en) 2015-05-29 2016-12-08 Weatherby Michael T Automated helmet gas bladder maintenance system and method
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
EP3540761B1 (en) * 2016-11-09 2022-01-05 Fujimi Incorporated Polishing composition and method for polishing silicon wafer
US11401441B2 (en) * 2017-08-17 2022-08-02 Versum Materials Us, Llc Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

Also Published As

Publication number Publication date
JP2020141137A (ja) 2020-09-03
IL272585B2 (en) 2024-08-01
SG10202001386VA (en) 2020-09-29
JP7240346B2 (ja) 2023-03-15
IL272585A (en) 2020-08-31
IL272585B1 (en) 2024-04-01
KR20200105431A (ko) 2020-09-07
EP3702425A1 (en) 2020-09-02
US20200277514A1 (en) 2020-09-03
CN111732897A (zh) 2020-10-02

Similar Documents

Publication Publication Date Title
CN109456704B (zh) 金属化学机械平面化（cmp）组合物及其方法
KR102323303B1 (ko) 구리 및 관통 실리카 비아(tsv) 적용을 위한 화학적 기계적 평탄화(cmp) 조성물 및 이를 위한 방법
TW202039775A (zh) 用於銅及貫穿矽通孔應用的化學機械研磨
JP6023125B2 (ja) 化学的機械的研磨スラリー組成物およびそれを使用した銅のための方法およびシリコン貫通ビア適用
KR101053712B1 (ko) 텅스텐-함유 기판의 화학 기계적 평탄화를 위한 콤비네이션, 방법 및 조성물
JP7818006B2 (ja) 銅及びシリコン貫通電極（ｔｓｖ）のための化学機械平坦化（ｃｍｐ）
TW202428838A (zh) 用於cmp金屬膜的組合物及方法