CN111725094B - 基板处理装置、半导体装置的制造方法以及记录介质 - Google Patents

基板处理装置、半导体装置的制造方法以及记录介质 Download PDF

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Publication number
CN111725094B
CN111725094B CN202010176554.2A CN202010176554A CN111725094B CN 111725094 B CN111725094 B CN 111725094B CN 202010176554 A CN202010176554 A CN 202010176554A CN 111725094 B CN111725094 B CN 111725094B
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China
Prior art keywords
substrate
chamber
heating
processing
processing apparatus
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CN202010176554.2A
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English (en)
Chinese (zh)
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CN111725094A (zh
Inventor
松井智哉
立野秀人
平野诚
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Kokusai Electric Corp
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Kokusai Electric Corp
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Publication of CN111725094A publication Critical patent/CN111725094A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN202010176554.2A 2019-03-22 2020-03-13 基板处理装置、半导体装置的制造方法以及记录介质 Active CN111725094B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-055549 2019-03-22
JP2019055549 2019-03-22

Publications (2)

Publication Number Publication Date
CN111725094A CN111725094A (zh) 2020-09-29
CN111725094B true CN111725094B (zh) 2024-04-09

Family

ID=72564078

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CN202010176554.2A Active CN111725094B (zh) 2019-03-22 2020-03-13 基板处理装置、半导体装置的制造方法以及记录介质

Country Status (3)

Country Link
JP (1) JP6995902B2 (https=)
CN (1) CN111725094B (https=)
TW (1) TWI770478B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115706037B (zh) * 2021-08-10 2025-12-12 北京北方华创微电子装备有限公司 半导体工艺设备及其晶圆对齐装置
WO2023047499A1 (ja) * 2021-09-22 2023-03-30 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
CN117913005B (zh) * 2024-01-19 2025-05-02 浙江泓芯新材料股份有限公司 一种石英舟热处理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283509A (ja) * 1996-04-11 1997-10-31 Sony Corp ウエハ処理装置および処理方法
JP2003100736A (ja) * 2001-09-26 2003-04-04 Hitachi Kokusai Electric Inc 基板処理装置
JP2014232816A (ja) * 2013-05-29 2014-12-11 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および基板処理方法
CN104520975A (zh) * 2012-07-30 2015-04-15 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及记录介质
KR20160123564A (ko) * 2015-04-16 2016-10-26 주식회사 유진테크 기판 버퍼링 장치, 기판처리설비, 및 기판처리방법
CN107924825A (zh) * 2015-09-30 2018-04-17 株式会社日立国际电气 半导体器件的制造方法、衬底处理装置及程序
CN108531887A (zh) * 2017-03-02 2018-09-14 株式会社日立国际电气 半导体器件的制造方法、衬底处理装置及记录介质

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
JP2001250781A (ja) 2000-03-06 2001-09-14 Hitachi Kokusai Electric Inc 半導体製造装置
JP2013197232A (ja) * 2012-03-19 2013-09-30 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法、半導体装置の製造方法及び半導体装置の製造方法を実行させるためのプログラムを記録した記録媒体。

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283509A (ja) * 1996-04-11 1997-10-31 Sony Corp ウエハ処理装置および処理方法
JP2003100736A (ja) * 2001-09-26 2003-04-04 Hitachi Kokusai Electric Inc 基板処理装置
CN104520975A (zh) * 2012-07-30 2015-04-15 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及记录介质
JP2014232816A (ja) * 2013-05-29 2014-12-11 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および基板処理方法
KR20160123564A (ko) * 2015-04-16 2016-10-26 주식회사 유진테크 기판 버퍼링 장치, 기판처리설비, 및 기판처리방법
CN107924825A (zh) * 2015-09-30 2018-04-17 株式会社日立国际电气 半导体器件的制造方法、衬底处理装置及程序
CN108531887A (zh) * 2017-03-02 2018-09-14 株式会社日立国际电气 半导体器件的制造方法、衬底处理装置及记录介质

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JP2020161808A (ja) 2020-10-01
TW202041706A (zh) 2020-11-16
TWI770478B (zh) 2022-07-11
CN111725094A (zh) 2020-09-29
JP6995902B2 (ja) 2022-01-17

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