CN111615317A - 磁屏蔽片及其制备方法 - Google Patents

磁屏蔽片及其制备方法 Download PDF

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CN111615317A
CN111615317A CN202010107478.XA CN202010107478A CN111615317A CN 111615317 A CN111615317 A CN 111615317A CN 202010107478 A CN202010107478 A CN 202010107478A CN 111615317 A CN111615317 A CN 111615317A
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magnetic
shield sheet
magnetic shield
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magnetic layer
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CN111615317B (zh
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金真培
姜东垣
金正旭
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LG Electronics Inc
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Abstract

本发明涉及一种磁屏蔽片及其制备方法。该磁屏蔽片包括磁性层和设置在磁性层的至少一个表面上的保护层。磁性层包含金属陶瓷复合物，所述金属陶瓷复合物是其上形成有陶瓷涂层的金属粉末。

Description

磁屏蔽片及其制备方法
技术领域
本发明涉及一种磁屏蔽片、压缩磁粉及其制备方法。
背景技术
已在电子设备中使用金属基或陶瓷基材料，来吸收侵入或辐射电子设备的电磁波。近来，为了抑制由近场通信(NFC)设备中与天线相邻的金属板或导体板中发生的涡电流而引起的干扰，并且为了确保通信距离和可靠性，使用了磁屏蔽片。
Mn-Zn铁氧体材料用作磁屏蔽材料。Mn-Zn铁氧体材料具有低的饱和磁化值。因此，如果施加的磁场高，则Mn-Zn铁氧体材料容易饱和，从而无法发挥正常的磁屏蔽功能。为了改善上述问题，增加了Mn-Zn铁氧体材料的厚度。但是，如果Mn-Zn铁氧体材料的厚度增大，则难以应用于某些装置，并且生产成本增加。
继而，将磁性金属材料用作磁屏蔽材料。关于使用磁性金属材料的磁屏蔽材料，与铁氧体材料相比，可以改善饱和磁化值，但是在高频带中会产生高涡电流损耗。
因此，需要结合了陶瓷材料和金属材料的新材料。然而，陶瓷材料和金属材料之间的耦合力弱，因此该复合材料的制备并不容易。
发明内容
本发明公开了一种新的磁屏蔽片，其中可以减少磁芯损耗并且可以获得优异的磁特性。
此外，本发明公开了一种用于有效地结合陶瓷材料和金属材料的磁屏蔽片的制备方法。
为了提供其中可以减少磁芯损耗并可以获得优异的磁特性的新的磁屏蔽片，本发明的磁屏蔽片包括磁性层和设置在该磁性层的至少一个表面上的保护层，其中，磁性层包含金属陶瓷复合物，所述金属陶瓷复合物是其上形成有陶瓷涂层的金属粉末。
另外，为了提供一种制备新的磁屏蔽片以有效地结合陶瓷材料和金属材料的方法，本发明的制备方法包括：(a)通过在金属粉末的表面上形成陶瓷涂层来制备金属陶瓷复合物；和(b)通过层叠保护层和包含所述金属陶瓷复合物的磁性层来制备所述磁屏蔽片。
另外，步骤(a)可包括形成陶瓷涂层的步骤，其中通过使用超声热解装置将陶瓷材料喷射到包含金属粉末的反应器中，并将陶瓷材料涂覆在金属粉末的表面上。
本发明的磁屏蔽片具有陶瓷材料和金属材料的所有优点，从而可以减少磁芯损耗并且磁特性优异。
由于金属粉末的磁特性，与使用铁氧体基材料的磁屏蔽片相比，本发明的磁屏蔽片可以制备得更薄。
而且，本发明的磁屏蔽片的特征在于，与金属材料或铁氧体基材料相比，磁芯损耗减少。
另外，本发明的磁屏蔽片的制备方法可以有效地结合陶瓷材料和金属材料。
附图说明
图1是示出了本发明的磁屏蔽片的结构的截面图。
图2是示出了本发明的磁屏蔽片中包含的金属陶瓷复合物的SEM照片。
图3是示出了本发明的实施例和比较例的磁芯损耗的图。
具体实施方式
在下文中将具体描述上述目的、特征和优点；因此，本领域技术人员可以容易地实现本发明的技术实质。在描述本发明内容时，如果认为会使本发明内容的主旨不必要地变得模糊，则可以省略关于本发明的已知技术的详细描述。在下文中，将具体阐释本发明的优选实施方式。
本发明不限于以下公开的实施方式，并且可以以各种不同的形式实现。提供本发明的实施方式仅用于可以使本发明完整，以便在本发明的领域中充分传达给本领域技术人员。在下文中，具体描述本发明的磁屏蔽片及其制备方法。
<磁屏蔽片>
参照图1，本发明的磁屏蔽片10包括磁性层1和设置在磁性层1的至少一个表面上的保护层2。磁性层1包含金属陶瓷复合物，其为其上形成有陶瓷涂层的金属粉末。
在下文中，具体描述本发明的磁屏蔽片10的构造。
首先描述保护层2。在本发明的磁屏蔽片10中，保护层2设置在磁性层1的任何一个表面上。保护层2的作用是保护磁性层1并防止在施加弯曲力时由于破裂而产生碎片。
参考图1，保护层2设置在磁性层1的仅一个表面上。但是，保护层2可以设置在磁性层1的两个表面上。
而且，除单层以外，保护层2可以形成为多个层。
保护层2的材料不受限制，例如，可以使用具有挠性的任何聚合物膜。例如，聚对苯二甲酸乙二醇酯(PET)、聚乙烯(PE)、聚酰亚胺(PI)、聚碳酸酯(PC)或包括其混合材料的膜可以用作保护层2。
接下来，描述磁性层1。本发明的磁性层1的作用是吸收侵入或辐射到电子设备中的电磁波，并且包含金属陶瓷复合物，所述金属陶瓷复合物是其上形成有陶瓷涂层的金属粉末。
磁性层1可以形成为烧结型片或非烧结干聚合物型片。
上述金属陶瓷复合物包含在磁性层1中。金属陶瓷复合物可包含在其表面上形成有陶瓷涂层的金属粉末颗粒。陶瓷涂层可以包括涂覆在金属粉末颗粒的表面上的多种陶瓷材料。不需要必须在金属粉末颗粒的整个表面上形成陶瓷涂层，并且可行的是将陶瓷涂层部分地形成为岛状。
参照图2中的SEM照片，图2示出了包含在磁性层1中的金属陶瓷复合物。关于金属陶瓷复合物，陶瓷颗粒涂覆在金属粉末颗粒的表面上。
各种金属材料可以用于金属粉末，但是优选地，可以包括选自由Fe、Fe-Co、Fe-Si、Fe-Al和Fe-Mn组成的组中的一种或多种金属材料。
而且，各种陶瓷材料可以用于陶瓷涂层，但是优选地，可以包括选自由MgO、Al2O3、SiO2和Y2O3组成的组中的一种或多种陶瓷材料。
特别地，以所述金属陶瓷复合物的100重量％为标准，金属粉末的含量重量比可以为60至90重量％，并且陶瓷涂层的含量重量比可以为10至40重量％。当金属粉末和陶瓷涂层的含量满足上述范围时，磁性层1的磁性质最优异。
根据上述内容，本发明的磁性层1可以形成为片状，并且相对于总重量，磁性层1可以包括50至80重量％的粉末形式的金属陶瓷复合物。
磁性层1的饱和磁化值优选为160emu/g以上，并且在100kHz下的磁芯损耗值优选为400kW/m3以下。另一方面，Mn-Zn铁氧体材料的饱和磁化值小于100emu/g，并且涡电流损耗也大，因此，磁性层的厚度应较厚。然而，本发明的磁性层1具有上述的磁物理性质，因此其厚度可以较薄。
根据上述内容，本发明的磁屏蔽片10具有包含金属陶瓷复合物的磁性层1，从而同时确保了金属材料的优势和陶瓷材料的优势。
<磁屏蔽片的制备方法>
如上所述，本发明的磁屏蔽片10具有包含金属陶瓷复合物的磁性层1。本发明特别地提供了一种容易地制备包含在磁性层1中的金属陶瓷复合物的方法。
本发明的磁屏蔽片10的制备方法包括：(a)通过在金属粉末的表面上形成陶瓷涂层来制备金属陶瓷复合物；和(b)通过层叠保护层和包含所述金属陶瓷复合物的磁性层来制备所述磁屏蔽片。
首先，本发明的磁屏蔽片10的制备方法包括(a)通过在金属粉末的表面上形成陶瓷涂层来制备金属陶瓷复合物。
在步骤(a)中，可以采用在金属粉末的表面上形成陶瓷涂层的各种方法。
优选地，步骤(a)包括制备包含金属材料和陶瓷材料的前体溶液，和通过在反应器中热处理所述前体溶液并经过部分还原工序来制备金属陶瓷复合物。
更具体地，金属材料和陶瓷材料可以以金属氧化物的形式包含在前体溶液中。例如，如果金属材料是铁(Fe)并且陶瓷材料是氧化镁(MgO)，则金属材料可以以硝酸铁九水合物的形式包含在前体溶液中，并且陶瓷材料可以以硝酸镁六水合物的形式包含在前体溶液中。
前体溶液可包含金属氧化物前体和溶剂。可以通过已知方法来产生前体，并且可以使用已知溶剂作为溶剂而不受限制。
优选地，其中陶瓷材料涂覆在金属粉末的表面上的金属陶瓷复合物可以通过以下方式制备：在超声喷雾热解装置的反应器中汽化前体溶液，在其中进行喷雾，在反应器中进行热处理，并经过部分还原工序。
此处，金属粉末使用如上所述的各种金属材料，但是可以优选地包括选自由Fe、Fe-Co、Fe-Si、Fe-Al和Fe-Mn组成的组中的一种或多种金属材料。
另外，陶瓷涂层可以使用如上所述的各种陶瓷材料，但是可以优选地包括选自由MgO、Al2O3、SiO2和Y2O3组成的组中的一种或多种陶瓷材料。
陶瓷材料和金属材料由于各自的材料特性而难以相互结合。然而，根据本发明的制备方法，可以获得可应用于磁屏蔽片并且具有优异的磁性质的金属陶瓷复合物。
接下来，本发明的制备方法包括：(b)通过层叠保护层和包含所述金属陶瓷复合物的磁性层来制备所述磁屏蔽片。
步骤(b)是制备其中层叠有保护层和磁性层的磁屏蔽片的步骤。对保护层和磁性层进行层叠的方式没有特别限制。在步骤(b)中，可以在保护层上形成磁性层，或者可以在磁性层上形成保护层。
作为一个实例，可以通过在保护层上覆盖包含金属陶瓷复合物的糊剂来形成磁性层。
作为另一实例，将磁性层制备为包含金属陶瓷复合物的片材，并且保护层可以粘附至磁性层的任何一个表面上。
在下文中，基于实施例来说明本发明的具体实施方式。
<实施例>
实施例1
作为用于合成金属陶瓷复合物(Fe/MgO)的前体溶液，制备了下述前体溶液，其中将硝酸铁九水合物(98％)和硝酸镁六水合物(99％)的摩尔比控制为7:3。
之后，将前体溶液置于超声喷雾热解装置的下部，并通过施加超声波进行喷雾。通过以3L/分钟的速度提供的空气作为载气，将喷雾的前体溶液以蒸汽状态运送到加热部。通过两个步骤配置位于设备中央的加热部。在第一步骤的加热部中，将蒸汽在200℃的温度下加热，以使水蒸发。在第二步骤的加热部中，通过在500℃加热来制备氧化物粉末。根据USP方法，通过以下方式合成并产生金属陶瓷复合物(Fe/MgO)：将在装置上部的纸过滤器中收集的粉末放入管式炉中，并在以1,000cc/分钟的速率吹入氢气的气氛下，通过以10℃/分钟的升温速率加热和在700℃保温30分钟进行部分还原工序。
将60重量％的金属陶瓷复合物粉末投入包含液体粘合剂和溶剂的涂布溶液中，并以高速率对其进行混合和分散，从而制备磁性层涂布溶液。在厚度为3.5μm的PET膜(可从韩国SKC Co.,Ltd.获得)的一个表面上覆盖厚度为约3μm的涂覆溶液，并将其干燥，从而制备磁屏蔽片。
2.实施例2
实施例2使用金属陶瓷复合物(Fe7Co3/MgO)替代实施例1的金属陶瓷复合物(Fe/MgO)。在实施例2中，制备摩尔比为7:3的硝酸铁九水合物(98％)和硝酸钴水合物(99％)的混合物。此后，将硝酸镁六水合物(99％)加入上述混合物中，其中硝酸铁九水合物和硝酸钴水合物的总摩尔数与硝酸镁六水合物(99％)的摩尔数的比率为7:3。由此制备了前体溶液。其他工序与实施例1相同。
3.实施例3
实施例3使用金属陶瓷复合物(Fe7Co3/Al2O3)替代实施例1的金属陶瓷复合物(Fe/MgO)。在实施例3中，制备摩尔比为7:3的硝酸铁九水合物(98％)和硝酸钴水合物(99％)的混合物，然后制备上述金属氧化物和硝酸铝九水合物的混合物，其中上述金属氧化物的总摩尔数与硝酸铝九水合物(98％)的摩尔数的比率为7:3。此后，将氯化钠(99％)与上述物质混合，其中氯化钠相对于总重量的比例为3％。由此制备了前体溶液。其他工序与实施例1相同。
4.比较例1
将60重量％的Mn-Zn铁氧体粉末投入包含液体粘合剂和溶剂的涂布溶液中，并以高速率对其进行混合和分散，从而制备磁性层涂布溶液。在厚度为3μm的PET膜的一个表面上覆盖厚度约为3μm的涂覆溶液，将其干燥，从而制备磁屏蔽片。
<磁物理性质的测量>
对于实施例1至3和比较例1，测量了饱和磁化值。对于每个样品的饱和磁化值，通过使用磁滞曲线测量仪(振动样品磁力计，Lake Shore#7300，USA)测量磁滞曲线值，然后根据磁滞曲线评价和测量饱和磁化值。通过BH分析仪(Iwatsu,SY-8219)测量每个样品的损失值。
在实施例1至3中，测得的饱和磁化值分别为161(emu/g)、182(emu/g)和174(emu/g)。在比较例1中，测得的饱和磁化值为86(emu/g)。因此，可以确认与现有的磁屏蔽片相比，本发明的磁屏蔽片的饱和磁化值得到了改善。
另外，参照图3，图中示出了实施例1(Fe/MgO)和比较例1(Mn-Zn铁氧体)中的磁芯损耗的比较结果。对于实施例1(Fe/MgO)的磁屏蔽片，在100kHz下的损耗特性为400kW/m3以下，从而确认了，与比较例1(Mn-Zn铁氧体)相比，损耗特性降低。
以上描述了本发明，但是本发明不限于所公开的实施方式，并且显而易见的是，本领域的普通技术人员可以在本发明的技术实质范围内进行各种修改。此外，即使在本发明的实施方式的描述中没有明确描述本发明的构造的作用和效果，但是可以确定的是，也应该承认由相关构造带来的效果是可预测的。

Claims (10)

1.一种磁屏蔽片，其包括：
磁性层；和
设置在所述磁性层的至少一个表面上的保护层，其中：
所述磁性层包含金属陶瓷复合物，所述金属陶瓷复合物是其上形成有陶瓷涂层的金属粉末。
2.如权利要求1所述的磁屏蔽片，其中：
所述金属粉末包括选自由Fe、Fe-Co、Fe-Si、Fe-Al和Fe-Mn组成的组中的一种或多种金属材料。
3.如权利要求1所述的磁屏蔽片，其中：
所述陶瓷涂层包括选自由MgO、Al2O3、SiO2和Y2O3组成的组中的一种或多种陶瓷材料。
4.如权利要求1所述的磁屏蔽片，其中：
以所述金属陶瓷复合物的100重量％为标准，
所述金属粉末的含量为60重量％至90重量％，并且所述陶瓷涂层的含量为10重量％至40重量％。
5.如权利要求1所述的磁屏蔽片，其中：
所述磁性层的饱和磁化值是160emu/g以上。
6.如权利要求1所述的磁屏蔽片，其中：
所述磁性层在100kHz下的磁芯损耗值为400kW/m3以下。
7.一种磁屏蔽片的制备方法，所述方法包括：
(a)通过在金属粉末的表面上形成陶瓷涂层来制备金属陶瓷复合物；和
(b)通过层叠保护层和包含所述金属陶瓷复合物的磁性层来制备所述磁屏蔽片。
8.如权利要求7所述的磁屏蔽片的制备方法，其中：
步骤(a)包括：
制备包含金属材料和陶瓷材料的前体溶液；和
通过在反应器中热处理所述前体溶液并经过部分还原工序来制备金属陶瓷复合物。
9.如权利要求7所述的磁屏蔽片的制备方法，其中：
所述金属粉末包括选自由Fe、Fe-Co、Fe-Si、Fe-Al和Fe-Mn组成的组中的一种或多种金属材料。
10.如权利要求7所述的磁屏蔽片的制备方法，其中：
所述陶瓷涂层包括选自由MgO、Al2O3、SiO2和Y2O3组成的组中的一种或多种陶瓷材料。
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