CN111559138A - 一种烯烃基覆铜板 - Google Patents
一种烯烃基覆铜板 Download PDFInfo
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Abstract
本发明涉及一种烯烃基覆铜板,由表面处理铜箔、玻璃布树脂绝缘材料组成;所述烯烃基覆铜板的制备方法包括以下步骤:将表面处理铜箔与半固化片叠合后热压,得到烯烃基覆铜板;所述表面处理铜箔由含双键碳氢物处理铜箔粗糙面得到,具有一种低介电常数和低损耗因子的基体,用于制作高频高速应用领域的层压板。
Description
技术领域
本发明涉及一种热固性烯烃基覆铜板,可用于高频高速通讯领域材料的制备。
背景技术
覆铜板(copper clad laminate,CCL)是制作印刷线路板(print circuit board,PCB)的基础材料,是PCB的上游基本材料,占PCB成本的35%左右。CCL将补强材料浸以树脂,一面或两面覆以铜箔,经热压而成的一种板状材料。通过在CCL上打孔、电镀等工序后,便形成了PCB。作为PCB的基础,CCL很大程度上决定了PCB板(电路板)的性能。5G时期的频段比4G时期更高,导致传输过程中会有更高的损耗。为了解决这个问题,需要使用更低损耗(更低的介电常数和介电损耗)的材料。而对于电路板来说,其介电常数和介电损耗主要由覆铜板中的绝缘层材料决定。因此以介电性能良好的树脂材料作为覆铜板绝缘层的原材料将成为大趋势。烯烃类基板已经成为研究高频基板的重点方向,纵观现有技术,都是在树脂基体上做研究,从未有关于铜箔处理的技术更新,而铜箔与介质层的界面效应对覆铜板的应用非常关键,尤其关系剥离强度。比如现有技术以改性聚苯醚树脂、烯烃类化合物、交联助、阻燃剂制备树脂组合物,通过含磷酸酐化合物和环氧改性碳氢树脂反应,将含磷原子很好地引入碳氢树脂的固化交联体系中,获得同时满足无卤阻燃和低介电常数、低介质损耗值的基板材料;通过使用硅芳炔树脂、含不饱和键的聚苯醚树脂、丁二烯聚合物树脂组合物,制得的覆金属层压板可以至少具有低介电损耗因数、高耐热性、低热膨胀系数等特性中的一个;还公开了热固性树脂组合物包括溶剂可溶性的多官能乙烯基芳香族共聚物、聚丁二烯树脂,制作的半固化片及覆铜箔层压板具有良好的韧性,且保持了高的玻璃化转变温度、低的吸水率、介电特性和耐湿热性,适合高频高速印制线路板领域使用,并适合于多层印制线路板加工。
发明内容
本发明所要解决的技术问题是提供一种烯烃基覆铜板,该复合材料基板损耗因子低,在低铜箔粗糙度Rz下,剥离强度高、吸水率低,尤其是在烯烃树脂基础上,以低粗糙度获得符合要求的剥离强度,适合天线及基站等要求高频的应用。
本发明采取如下技术方案:
一种烯烃基覆铜板,由表面处理铜箔、玻璃布树脂绝缘材料组成;所述烯烃基覆铜板的制备方法包括以下步骤:将表面处理铜箔与半固化片叠合后热压,得到烯烃基覆铜板;所述表面处理铜箔由含双键碳氢物处理铜箔粗糙面得到。
本发明公开的烯烃基覆铜板,其制备方法包括以下步骤;
(1)将烯烃聚合物溶入溶剂中,搅拌下加入填料、固化剂,搅拌得到胶液;所述烯烃聚合物包括丁二烯、苯乙烯、聚丁二烯、聚苯乙烯或者丁二烯与苯乙烯的共聚物;
(2)将玻璃布浸渍胶液,得到预浸料;加热预浸料,得到半固化片;
(4)将5~10张半固化片叠合,上下各压覆一张表面处理铜箔,热压得到烯烃基覆铜板;所述表面处理铜箔由含双键碳氢物处理铜箔粗糙面得到。
本发明中,所述含双键碳氢物为含有双键的、仅由碳氢组成的物质,比如丁二烯、苯乙烯、聚丁二烯、聚苯乙烯或者丁二烯与苯乙烯的共聚物;所述铜箔的毛面粗糙度Rz为1~10微米;所述铜箔的厚度为5~70微米,比如所述铜箔为1盎司铜箔或者半盎司铜箔,优选铜箔的毛面粗糙度Rz为1~5微米,进一步优选铜箔的毛面粗糙度Rz为1~3微米;铜箔为RTF铜箔或者HVLP铜箔。
现有技术公开了一种电子复合材料基板,该热固性电子复合材料包括丁二烯、苯乙烯、丁二烯苯乙烯共聚物或苯乙烯丁二烯苯乙烯共聚物,可制得低损耗因子基板,并且耐热、耐水、剥离等性能优异,但是为了提高剥离强度采用的铜箔为STD铜箔,需要高的粗糙度,限定1盎司铜箔的铜瘤高度为8~12微米,半盎司铜箔的铜瘤高度为6~10微米,铜箔粗糙面经过乙烯基偶联剂处理,这样导致制备的基板PIM性能较差;本发明采用新的技术方案,在低粗糙度情况下,得到与现有技术近似的剥离强度,尤其是极大改善了PIM性能,降低了信号失真。
本发明中,所述半固化片由玻璃布浸渍胶液制备得到;所述胶液包括烯烃聚合物、溶剂、填料、固化剂;烯烃聚合物、填料、固化剂的质量比为100∶(50~300)∶(2~4);玻璃布为2116玻璃布、1080玻璃布或106玻璃布。
本发明中,所述填料的粒径为30~50微米;所述固化剂包括过氧化二异丙苯、过氧化苯甲酸叔丁酯、2,5-二(2-乙基己酰过氧)-2,5-二甲基己烷中的一种或几种;所述胶液的固含量为80~85%。
本发明中,所述填料包括二氧化硅、二氧化钛、钛酸钡、氮化硼、氧化铝中的一种或一种以上的混合物。
本发明中,所述半固化片位于两张表面处理铜箔之间;所述半固化片为5~10张。
本发明中,热压的温度为150~300℃,时间为20~75分钟,压力为35kg/cm2~80kg/cm2。
本发明公开了所述烯烃基覆铜板在制备高频材料中的应用;所述高频材料包括电路板。
本发明的热固性电子复合材料用于制作高频高速应用领域的层压板、半固化片和纯胶片,烯烃聚合物包括丁二烯、苯乙烯、聚丁二烯、聚苯乙烯、丁二烯/苯乙烯共聚物中的一种或几种;其中丁二烯/苯乙烯共聚物包括丁二烯-苯乙烯共聚物或苯乙烯-丁二烯-苯乙烯共聚物等;二氧化硅包括结晶型二氧化硅、无定型二氧化硅、球形二氧化硅、气相二氧化硅等一种或者多种。
本发明具有如下优点:
本发明烯烃聚合物可以是丁二烯、苯乙烯的聚合产物,比如丁二烯苯乙烯共聚物、苯乙烯丁二烯苯乙烯共聚物,因树脂分子结构中含有刚性较好的苯环及高乙烯基含量提供固化交联时所需要的大量不饱和乙烯基,可提高固化时的交联密度,从而提高材料的优良的耐高温性能和刚性,烯烃聚合物如D1101(Kraton公司)和FG1901(Kraton公司)。
本发明的纤维玻璃布起到提高基板的尺寸稳定性,减少固化过程中材料收缩的作用;固化剂起到加速反应的作用,当本发明的组合物被加热时,固化剂分解产生自由基,引发聚合物的分子链发生交联,固化剂为过氧化二异丙苯DCP、过氧化苯甲酸叔丁酯、2,5-二(2-乙基己酰过氧)-2,5-二甲基己烷。
本发明的热固性电子复合材料中所采用的树脂不是环氧类树脂,而是采用低介电的双键类聚合物材料,同时搭配填料技术,可制得低损耗因子基板,尤其是,本发明克服了现有技术需要采用高铜箔铜瘤以提高树脂体系剥离强度的缺陷,可以在较低的毛面(粗糙面)粗糙度Rz的情况下,取得接近1N/mm的剥离强度,得到的基板传送损耗极低。
附图说明
图1为本发明表面处理铜箔实物照片;
图2为PIM测试仪照片。
具体实施方式
本发明将含双键碳氢物溶液涂在铜箔粗糙面上,去除溶剂,得到表面处理铜箔。
本发明以烯烃聚合物溶入溶剂中,搅拌下加入填料、固化剂,搅拌得到胶液;再利用玻璃布浸渍、加热得到半固化片,最后与表面处理铜箔叠合热压,得到烯烃基覆铜板;三个步骤操作简单。
本发明的颗粒填料为结晶型二氧化硅、无定型二氧化硅、球形二氧化硅、气相二氧化硅、二氧化钛、钛酸钡、氮化硼、氧化铝、玻璃纤维等一种或者多种,颗粒填料起着提高胶液固体含量、改善材料尺寸稳定性、降低CTE等目的;优先颗粒填料为二氧化硅,其中粒径30~50微米,可采用的二氧化硅填料如FB-35(Denka公司)、525(Sibelco公司)。
本发明所用原料都为覆铜板领域常规原料,涉及的测试方法为覆铜板常规的标准测试方法;铜箔一般为压延铜箔或者电解铜箔(压延铜箔或者电解铜箔的选择不影响本发明技术效果的实现,一般为电解铜箔,按粗糙度为RTF铜箔或者HVLP铜箔),其一面制备铜瘤形成粗糙面,再用含双键碳氢物处理,得到本发明的铜箔;现有技术采用高铜瘤高度来提高剥离强度,而本发明首次采用含双键碳氢物处理低粗糙度铜箔,解决了残铜率高以及提高剥离强度。
实施例1
将苯乙烯与丁二烯的嵌段共聚物(D1101 SBS)的二甲苯溶液涂覆在铜箔粗糙面上,自然晾干,挥发去除溶剂,得到表面处理铜箔,在铜箔粗糙面形成共聚物膜层,厚度为15微米,实物照片参见图1。
将100重量份的苯乙烯与丁二烯的嵌段共聚物(D1101)溶于甲苯,搅拌下加入100重量份的二氧化硅(525)、2.5重量份的固化剂DCP,搅拌得到胶液(固含量为80%),使用1080纤维玻璃布(上海宏和,布厚0.056mm)浸渍以上胶液得到预浸料,然后烘干去除溶剂后制得半固化片,胶含量为((半固化片的重量-对应玻璃布的重量)/半固化片的重量)为65%;将8张半固化片叠合,在其两侧压覆表面处理铜箔,在压机中经过高温热压固化后制成烯烃基覆铜板。
上述烘干的温度为90℃,时间为3.5分钟,热压的温度为230℃,时间为50分钟,压力为70kg/cm2;其物性数据如表1所示。
本实施例中,填料的粒径为30~40微米;铜箔为1盎司铜箔,铜箔的毛面粗糙度Rz为2.9微米。
实施例2
将苯乙烯与丁二烯的嵌段共聚物(D1101 SBS)的二甲苯溶液涂覆在铜箔粗糙面上,自然晾干,挥发去除溶剂,得到表面处理铜箔,在铜箔粗糙面形成共聚物膜层,厚度为20微米。
将100重量份的苯乙烯与丁二烯的嵌段共聚物(D1101)溶于甲苯,搅拌下加入250重量份的二氧化硅(525)、3.5重量份的固化剂DCP,搅拌得到胶液(固含量为80%),使用1080纤维玻璃布浸渍以上树脂液然后烘干去除溶剂后制得半固化片,胶含量为((半固化片的重量-对应玻璃布的重量)/半固化片的重量)为68%;再将8张半固化片叠合,在其两侧压覆表面处理铜箔,在压机中经过高温热压固化后制成烯烃基覆铜板;烘干的温度为100℃,时间为3分钟,热压的温度为240℃,时间为45分钟,压力为80kg/cm2;其物性数据如表1所示。
本实施例中,填料的粒径为40~50微米;铜箔为0.5盎司铜箔,铜箔的毛面粗糙度Rz为2.2微米。
对比例1
制作工艺与实施例1相同,采用现有1盎司铜箔(毛面粗糙度Rz为2.9微米),即未经过烯烃表面处理,其余一样,其物性数据如表1所示。
对比例2
制作工艺与实施例1相同,其中铜箔粗糙面经过乙烯基偶联剂乙烯基三甲基硅烷处理,而不是含双键碳氢物处理,其余一样;其物性数据如表1所示。
实施例3
制作工艺与实施例1相同,其中填料为氮化铝,而不是二氧化硅,其余一样;其物性数据如表1所示。
以上所有原料都是市购产品,得到的产品性能测试方法为常规方法,在实施例一的基础上,将二氧化硅替换为钛酸钡、氧化铝等填料,性能接近。
表1 实施例以及对比例产品性能
介电性能根据IPC TM-650 2.5.5方法测试;根据IPC TM-650 2.6.2.1方法测试吸湿率,实施例都小于0.1%;剥离强度根据IPC TM-650 2.4.8方法测试。
对比例4
制作工艺与实施例1相同,采用现有毛面粗糙度Rz为10微米的1盎司铜箔,经过同样的苯乙烯与丁二烯的嵌段共聚物(D1101 SBS)表面处理,其余一样。
对比例5
制作工艺与实施例1相同,采用现有毛面粗糙度Rz为10微米的1盎司铜箔,经过乙烯基偶联剂乙烯基三甲基硅烷表面处理,其余一样。
采用PIM测试仪测试PIM(2600MHz),参见图2(试验样条参见图左下角),实施例1、实施例2的产品PIM分别为-162 dBc、-161 dBc;对比例4、对比例5分别为-148 dBc、-150dBc,信号失真较大。
如上物性分析所述,与一般的复合材料相比,本发明的烯烃覆铜板拥有更加优异的介电常数和损耗因子,高频高速性能很好,完全满足未来5G市场的需求。
以上实施例,并非对本发明的组合物的电子复合材料作任何限制,凡是依据本发明的技术实施或组合物或含量对以上实施例所做的任何细微修改,等同变化与修饰,均仍属于本发明的技术方案的范围内。
Claims (10)
1.一种烯烃基覆铜板,其特征在于,所述烯烃基覆铜板由表面处理铜箔、玻璃布树脂绝缘材料组成;所述烯烃基覆铜板的制备方法包括以下步骤:将表面处理铜箔与半固化片叠合后热压,得到烯烃基覆铜板;所述表面处理铜箔由含双键碳氢物处理铜箔粗糙面得到。
2.根据权利要求1所述烯烃基覆铜板,其特征在于:所述含双键碳氢物为丁二烯、苯乙烯、聚丁二烯、聚苯乙烯或者丁二烯与苯乙烯的共聚物;所述铜箔的毛面粗糙度Rz为1~10微米;所述铜箔的厚度为5~70微米。
3.根据权利要求1所述烯烃基覆铜板的制备方法,其特征在于:所述半固化片由玻璃布浸渍胶液制备得到;所述胶液包括烯烃聚合物、溶剂、填料、固化剂。
4.根据权利要求3所述烯烃基覆铜板,其特征在于:烯烃聚合物、填料、固化剂的质量比为100∶(50~300)∶(2~4);玻璃布为2116玻璃布、1080玻璃布或106玻璃布。
5.根据权利要求3所述烯烃基覆铜板,其特征在于:所述填料的粒径为30~50微米;所述固化剂包括过氧化二异丙苯、过氧化苯甲酸叔丁酯、2,5-二(2-乙基己酰过氧)-2,5-二甲基己烷中的一种或几种;所述胶液的固含量为80~85%。
6.根据权利要求5所述烯烃基覆铜板,其特征在于:所述填料包括二氧化硅、二氧化钛、钛酸钡、氮化硼、氧化铝中的一种或一种以上的混合物。
7.根据权利要求1所述烯烃基覆铜板,其特征在于:所述半固化片位于两张表面处理铜箔之间;所述半固化片为5~10张。
8.根据权利要求1所述烯烃基覆铜板,其特征在于:热压的温度为150~300℃,时间为20~75分钟,压力为35kg/cm2~80kg/cm2。
9.权利要求1所述烯烃基覆铜板在制备高频材料中的应用。
10.根据权利要求9所述的应用,其特征在于,所述高频材料包括电路板。
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