CN111512356B - 显示装置 - Google Patents
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- Publication number
- CN111512356B CN111512356B CN201880083528.6A CN201880083528A CN111512356B CN 111512356 B CN111512356 B CN 111512356B CN 201880083528 A CN201880083528 A CN 201880083528A CN 111512356 B CN111512356 B CN 111512356B
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- China
- Prior art keywords
- insulating film
- display device
- oxide semiconductor
- film
- channel
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- 239000010408 film Substances 0.000 claims abstract description 244
- 239000004065 semiconductor Substances 0.000 claims abstract description 114
- 125000006850 spacer group Chemical group 0.000 claims abstract description 79
- 239000011229 interlayer Substances 0.000 claims abstract description 51
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims description 42
- 229910052739 hydrogen Inorganic materials 0.000 claims description 42
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 40
- 239000004973 liquid crystal related substance Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 40
- 239000000758 substrate Substances 0.000 description 28
- 238000001312 dry etching Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
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- 229920001721 polyimide Polymers 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
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- 239000003566 sealing material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 Zinc Oxide Nitride Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000000852 hydrogen donor Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- OWOMRZKBDFBMHP-UHFFFAOYSA-N zinc antimony(3+) oxygen(2-) Chemical compound [O--].[Zn++].[Sb+3] OWOMRZKBDFBMHP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
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- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Abstract
本发明的课题为,在具有由氧化物半导体构成的TFT的显示装置中,减小源极/漏极电阻并实现具有稳定的Vd‑Id特性的TFT。本发明的内容为:形成有多个具有由氧化物半导体105构成的薄膜晶体管(TFT)的像素的显示装置,其特征在于,所述氧化物半导体105中形成有沟道,在所述沟道的两侧形成的漏极及源极,在所述沟道与所述漏极之间或所述沟道与所述源极之间形成有中间区域,在所述氧化物半导体105的所述沟道与所述中间区域之上形成有栅极绝缘膜106,在所述栅极绝缘膜106之上形成有氧化铝膜107,在所述沟道的上方且在所述氧化铝膜107之上形成有栅电极109,在所述栅电极109的两侧形成有侧壁间隔件108,以覆盖所述栅电极109、所述侧壁间隔件108及所述源极及漏极的方式形成有层间绝缘膜110。
Description
技术领域
本发明涉及显示装置,涉及具有使用氧化物半导体的TFT的显示装置。
背景技术
有机EL显示装置在各像素内具有由TFT(Thin Film Transistor:薄膜晶体管)形成的驱动晶体管、开关晶体管,另外,液晶显示装置在各像素内具有由TFT形成的开关晶体管。因此TFT的特性是重要的。
氧化物半导体截止电阻(OFF电阻)高,在将其用于TFT时能够减小截止电流(OFF电流)。因此能够减小像素电极电位的变化。另外,使用氧化物半导体的TFT与使用多晶硅等TFT相比能够在更低的温度形成,因此能够实现使用树脂基板而得的显示装置。
在TFT中,在沟道与漏极之间电场集中,存在在该部分发生绝缘击穿的危险。因此,在使用多晶硅(poly-Si)的TFT中,在沟道与漏极之间形成LDD(Lightly Doped Drain:轻掺杂漏极)区域以防止该部分的绝缘击穿。
在使用氧化物半导体的在TFT中,为了形成漏极和源极,通过向氧化物半导体的漏极和源极的部分供给氢而进行对该部分赋予导电性的处理。在专利文献1中记载了下述构成:使供给至漏极及源极的氢扩散,形成发挥与LDD区域相同作用的区域、即在沟道与漏极或源极之间形成电阻比沟道区域小、比漏极或源极大的区域。
现有技术文献
专利文献
专利文献1:日本特开2017-85079号公报
发明内容
发明要解决的课题
如专利文献1记载所示,对于通过退火使氢扩散至栅电极的下侧而形成中间电阻部分的方法而言,难以控制氢的扩散区域。特别是,若沟道长度变小,则存在TFT耗尽(deplete)的危险。若为了减小漏极及源极的电阻而向漏极及源极供给更多的氢,则耗尽的危险进一步增加。
本发明的课题为能够得到下述构成,即,在使用氧化物半导体的TFT中,能够在沟道与漏极及源极之间稳定地形成中间区域。另外,本发明的课题为,实现具有稳定特性的使用氧化物半导体的TFT。
用于解决课题的手段
本发明能够克服上述问题,具体的手段如下。
(1)显示装置,其形成有多个具有由氧化物半导体构成的薄膜晶体管(TFT)的像素,所述显示装置的特征在于,所述氧化物半导体中形成有沟道,在所述沟道的两侧形成有漏极及源极,在所述沟道与所述漏极之间及所述沟道与所述源极之间形成有中间区域,在所述氧化物半导体的所述沟道与所述中间区域之上形成有栅极绝缘膜,在所述栅极绝缘膜之上形成有氧化铝膜,在所述沟道的上方且在所述氧化铝膜之上形成有栅电极,在所述栅电极的两侧形成有侧壁间隔件,以覆盖所述栅电极、所述侧壁间隔件及所述源极及漏极的方式形成有层间绝缘膜。
(2)根据(1)所述的显示装置,其特征在于,在俯视观察时,在所述氧化物半导体与所述栅电极和所述氧化铝膜相接触的部分重叠的部分形成有所述沟道,同样地,在与所述侧壁间隔件对应的部分形成有所述氧化物半导体的所述中间区域。
(3)根据(1)所述的显示装置,其特征在于,所述层间绝缘膜与所述氧化物半导体的所述漏极及所述源极直接接触。
(4)根据(1)所述的显示装置,其特征在于,所述氧化物半导体的所述漏极及所述源极由所述栅极绝缘膜覆盖,所述层间绝缘膜与所述栅极绝缘膜接触。
附图说明
图1是有机EL显示装置的俯视图。
图2是作为对比例的有机EL显示装置的显示区域的剖视图。
图3是示出图2的构成的问题的剖视图。
图4是本发明的有机EL显示装置的显示区域的剖视图。
图5是实施例1的TFT部分的剖视图。
图6是实施例1的TFT部分的俯视图。
图7是示出用于形成本发明的TFT的中间工序的剖视图。
图8是示出用于形成本发明的TFT的接续图7的中间工序的剖视图。
图9是示出用于形成本发明的TFT的接续图8的中间工序的剖视图。
图10是示出用于形成本发明的TFT的接续图9的中间工序的剖视图。
图11是示出用于形成本发明的TFT的接续图10的中间工序的剖视图。
图12是示出用于形成本发明的TFT的接续图11的中间工序的剖视图。
图13是实施例2的有机EL显示装置的显示区域的剖视图。
图14是示出用于形成实施例2的TFT的中间工序的剖视图。
图15是示出实施例2的TFT完成的状态的剖视图。
图16是液晶显示装置的俯视图。
图17是本发明的液晶显示装置的显示区域的剖视图。
具体实施方式
以下,通过实施例详细说明本发明的内容。作为氧化物半导体,存在IGZO(IndiumGallium Zinc Oxide:氧化铟镓锌)、ITZO(Indium Tin Zinc Oxide:氧化铟锡锌)、ZnON(Zinc Oxide Nitride:氮氧化锌)、IGO(Indium Gallium Oxide:氧化铟镓)等。在氧化物半导体中,光学透明且非结晶性物质被称为TAOS(Transparent Amorphous OxideSemiconductor:透明非晶氧化物半导体)。在本说明书中,也存在将氧化物半导体称为TAOS的情况。在实施例1及2中,说明将本发明应用于有机EL显示装置的情况,在实施例3中说明将本发明应用于液晶显示装置的情况。
实施例1
在图1中,在显示区域10的两侧形成有扫描线驱动电路80。在显示区域10中,扫描线91沿横向(x方向)延伸并沿纵向(y方向)排列。影像信号线92及电源线93沿纵向延伸并沿横向排列。由扫描线91、影像信号线92及电源线93包围的区域成为像素95,在像素95内形成有由TFT形成的驱动晶体管、开关晶体管、发光的有机EL层等。
在TFT基板100的一边形成有端子区域20。在端子区域20中,为了向有机EL显示装置供给电源、信号而连接有柔性布线基板600。若由例如0.2mm以下的玻璃形成TFT基板100,则能够将显示器弯曲使用。另外,若由聚酰亚胺等树脂形成TFT基板100,则能够形成柔性的显示装置。聚酰亚胺从机械强度、耐热性等角度作为显示装置的基板具有优异的特性。
图2为作为对比例的有机EL显示装置的显示区域10的剖视图。在TFT基板100之上形成有基底膜101。基底膜101防止在上层形成的氧化物半导体105被来自玻璃或树脂的杂质污染,并提高在显示装置上形成的膜与树脂基板或玻璃基板的粘接力。
基底膜101例如成为氧化硅膜(以下以SiO表示)、氮化硅膜(以下以SiN表示)、SiO的三层构成。下层的SiO防止杂质侵入并确保与作为TFT基板的玻璃或聚酰亚胺的粘接性。SiN针对来自玻璃基板或聚酰亚胺基板的特别是水分等具有优异的阻隔性。上层的SiO具有针对杂质的阻隔的作用,并提高在SiO之上形成的层与基板的粘接力。
在图2中,在基底膜101之上形成有底栅电极102。栅电极也形成在氧化物半导体105的上侧,图2的TFT成为所谓的双栅极方式。但是,在图2的构成中,顶栅电极109的影响大于底栅电极102的影响。底栅电极102还具有避免半导体层105受到来自背侧的光的影响的效果。
在底栅电极102与氧化物半导体105之间形成有由双层构造形成的底栅极绝缘膜。底栅极绝缘膜成为第1底栅极绝缘膜103和第2底栅极绝缘膜104的双层构造。第1底栅极绝缘膜103例如由50nm的氮化硅膜(SiN)形成,第2底栅极绝缘膜104例如由200nm的氧化硅膜(SiO)形成。
在第2底栅极绝缘膜104之上形成有氧化物半导体105。在氧化物半导体105的与沟道部相当的部分形成有顶栅极绝缘膜106,并在其上形成有顶栅电极109。图2中的TFT的构成使用图3说明。
在图2中,以覆盖TFT的方式形成有层间绝缘膜110。层间绝缘膜110成为SiN膜、SiO膜或SiN与SiO的层叠构造。图2的层间绝缘膜110具有向氧化物半导体105供给氢的作用。因此,层间绝缘膜110为含有氢的膜较好。
在层间绝缘膜110上形成有贯通孔,以将氧化物半导体105的漏极区域与漏电极111连接、将氧化物半导体105的源极区域与源电极112连接。由丙烯酸等树脂以覆盖层间绝缘膜110、漏电极111、源电极112等的方式形成有机平坦化膜113。有机平坦化膜113具有作为平坦化膜的作用,因此形成得较厚,为1.5μm至4μm左右。
在有机平坦化膜113上形成有贯通孔,以进行下部电极114与源电极112的连接。下部电极114为下层由银的薄膜等形成的反射电极,上侧作为针对有机EL层的阳极动作。阳极由例如作为透明导电膜的ITO(Indium Tin Oxide:氧化铟锌)形成。
以覆盖下部电极114的端部、有机平坦化膜113等的方式形成隔堤115。隔堤115由丙烯酸等树脂形成。隔堤115的作用为避免在下部电极114之上形成的有机EL层116在下部电极114的端部处发生台阶式切断以及对像素间进行划分。隔堤115为初始形成在整个面上,之后在形成有有机EL层116的部分即在发光部分形成孔的构成。
在图2中,在隔堤115的孔内,在下部电极114之上形成有有机EL层116。有机EL层116例如自下而上依次由空穴注入层、空穴传输层、发光层、电子传输层、电子注入层这5层形成。
在有机EL层116之上,由透明电极形成有作为阴极的上部电极117。上部电极117必须是透明的。上部电极117例如由ITO、IZO(Indium Zinc Oxide:氧化铟锌)、AZO(AntimonyZinc Oxide:氧化锑锌)等透明导电膜或银等金属的薄膜形成。金属在薄膜化时也接近透明。上部电极117在各像素中公共地形成在显示区域10的整个面上。
有机EL层116不耐受水,且因为薄而机械强度低。因此,使用由SiN、SiO、丙烯酸等形成的有机膜等层叠膜形成的保护膜118以覆盖上部电极117的方式形成。SiN成为针对水分的阻隔层,有机膜构成机械缓冲层,SiO发挥作为阻隔层的作用并提高与其他膜的粘接力。
有机EL显示装置具有反射膜而反射外部光。外部光的反射导致视觉辨认性恶化。由此,图2所示的有机EL显示装置在显示面上借助粘合材料119配置有圆偏振片120以防止外部光的反射。
图3是图2中的TFT部分的放大剖视图。在图3中,在基底膜101之上使用金属形成有底栅电极102。第1底栅极绝缘膜103由SiN以覆盖底栅电极102的方式形成厚度为例如50nm。在其上由SiO形成有厚度200nm的第2底栅极绝缘膜104。第1底栅极绝缘膜103、第2底栅极绝缘膜104能够连续地通过CVD(Chemical Vapor Deposition:化学气相沉积)形成。
在第2底栅极绝缘膜104之上形成有氧化物半导体105。氧化物半导体105若被氢还原则特性变化。为了使SiN释放氢,与氧化物半导体105接触的第2底栅极绝缘膜104由SiO形成。氧化物半导体105通过例如溅射法形成为10nm至100nm的厚度。氧化物半导体105由例如IGZO形成。
在图3中,在氧化物半导体105之上,在与氧化物半导体105的沟道对应的部分由SiO形成例如厚度100nm的顶栅极绝缘膜106。顶栅极绝缘膜106例如在整个面上形成SiO之后通过光刻而仅保留在与沟道对应的部分。
之后在顶栅极绝缘膜106之上形成顶栅电极109。顶栅电极109的厚度为例如200nm。顶栅极绝缘膜106的厚度为100nm,底栅极绝缘膜为由SiO形成的200nm的第2底栅极绝缘膜104和由SiN形成的50nm的第1栅极绝缘膜103的层叠膜,因此在TFT的Vg-Id特性中,顶栅电极109的影响占主导。以下也存在将顶栅电极109简称为栅电极,将顶栅极绝缘膜106简称为栅极绝缘膜的情况。
之后,以覆盖栅电极109、氧化物半导体105的方式形成层间绝缘膜110。在许多情况下,层间绝缘膜110设为下层为SiN膜、上层为SiO膜的层叠构造。之所以将下层设为SiN膜,是为了从SiN膜向氧化物半导体105供给氢以在氧化物半导体105上形成漏极区域和源极区域。即,在退火工序中,氢扩散至氧化物半导体105的未被栅电极109覆盖部分,对氧化物半导体105赋予导电性。由此,在氧化物半导体105上形成漏极区域及源极区域。并且,在层间绝缘膜110上形成贯通孔,将氧化物半导体105的漏极与漏电极111连接,将氧化物半导体105的源极与源电极112连接。
另一方面,氢未向氧化物半导体105中由栅电极109覆盖的部分扩散,因此保持高电阻。但是,被氧化物半导体105的漏极及源极吸收的来自SiN的氢在退火工序中也沿氧化物半导体105的横向扩散。由此,在沟道长度短的情况下会出现沟道导通的问题。或者虽然沟道未导通,但出现Vd-Id特性出现偏差的问题。
本发明能够应对上述问题。图4是本发明的有机EL显示装置的显示区域10的剖视图。图4与图2的区别在于具有氧化物半导体105的TFT的构成及覆盖TFT的层间绝缘膜110的构成。在图4中,由SiO形成第2底栅极绝缘膜104、在其上形成氧化物半导体105并进行图案化,至此与图2相同。
在图4中,在与氧化物半导体105的由漏极区域和源极区域夹入的区域对应的部分形成有由SiO形成的栅极绝缘膜106,在其上形成有氧化铝膜(以下记为AlO)107。虽然也可以由SiO膜106和AlO膜107形成栅极绝缘膜,但在本说明书中,方便起见将SiO膜称为栅极绝缘膜106,将氧化铝膜称为AlO膜107。
在AlO膜107之上由金属或合金形成有栅电极109,而本发明的特征为在AlO膜107的两端形成有由例如SiN等绝缘膜形成的侧壁间隔件108。如后所述,能够通过该侧壁间隔件108可靠地将沟道与漏极或源极分离开。
栅电极109及栅极绝缘膜106被图案化,氧化物半导体105的漏极及源极未由栅极绝缘膜106或栅电极109覆盖而与层间绝缘膜110直接接触。层间绝缘膜110成为SiN膜或SiN膜与SiO膜的双层构造。本发明的特征之一为SiN膜直接与氧化物半导体105的漏极或源极接触。因此能够向漏极及源极供给氢,减小漏极及源极的电阻。
在向漏极及源极供给了氢的情况下,由于氢容易扩散,因此在作为对比例的图3的构成中,在退火工序中氢扩散,TFT的特性变得不稳定。此外,若沟道长度变短,则还会出现沟道导通的危险。本发明特别是通过在栅电极109的两侧形成侧壁间隔件108来防止具有氧化物半导体的TFT的特性变得不稳定。层间绝缘膜110之上的构成与使用图2说明的内容相同。
图5为图4中的TFT周边的剖视图。在图5中,在氧化物半导体105之上形成有栅极绝缘膜106、AlO膜107及栅电极109。在栅电极109的端部与AlO膜107之间形成有侧壁间隔件108。栅电极109的未夹持侧壁间隔件108而与氧化物半导体105相对的部分成为氧化物半导体105的沟道1051。换言之,图5中的氧化物半导体105的与形成栅电极109的金属中成为凹部1091的部分对应的部分成为沟道1051。
栅极绝缘膜106仅形成在栅电极109的下侧,氧化物半导体105的成为漏极、源极的部分未被覆盖。之后由SiN以覆盖栅电极109、氧化物半导体105等的方式形成层间绝缘膜110。由于氧化物半导体105的与SiN膜接触的部分被供给氢,因此漏极及源极成为低电阻,能够增大漏极电流。
以往,使缺陷相对较多的SiO与氧化物半导体105接触而形成漏极及源极,但就氢的释放而言比SiN少,因此无法充分地使漏极及源极低电阻化,无法增大漏极电流。另一方面,在现有的构成中由SiN形成层间绝缘膜110时,氢被向氧化物半导体105供给,但该氢也向氧化物半导体105的沟道1051扩散而使沟道导通。特别是,在沟道长度短的TFT中,该危险很大。
本发明通过在栅电极109的两旁形成侧壁间隔件108来控制的氢向沟道1051扩散,同时实现氧化物半导体105中的漏极及源极的低电阻化和防止氢对沟道1051的影响。本发明还在栅极绝缘膜106与栅电极109及侧壁间隔件108之间形成AlO膜107,从而进一步增强该效果。
在图5中,位于栅极绝缘膜106与栅电极109及侧壁间隔件108之间的AlO膜107的厚度为10至50nm。为了抑制氧化物半导体105的沟道的特性变化,供给氧是有效的。因此,通过还从AlO膜107供给氧而更加稳定地向氧化物半导体105供给氧。
在AlO膜107之上形成的侧壁间隔件108的形状在截面中为一个侧壁形成倾斜的梯形。通过侧壁间隔件108而在氧化物半导体105上形成偏移区域(offset region)1052。偏移区域1052可靠地形成氧化物半导体105的沟道与漏极及源极(以下以漏极表示)之间的中间区域,即使在向漏极或源极供给了大量氢的情况下,也能够防止该氢对沟道造成影响,防止TFT的特性不均匀。特别是在沟道长度变短的情况下,该效果显著。
在图5中,偏移区域1052的长度d2为0.5μm至2μm。例如,在沟道长度d1为2μm的情况下,优选偏移区域1052的长度d2为1μm左右。在偏移区域1051与侧壁间隔件108之间存在AlO膜107。该AlO膜107成为氧的良好的供给源,因此使欲从漏极向沟道侧扩散的氢偏移,有效防止沟道1051被氢还原。
在图5中,栅电极109搭在侧壁间隔件108的上表面上。这是为了稳定地形成栅电极109。栅电极109搭在侧壁间隔件108上的量d3优选0.1μm以上。在俯视观察时,从栅电极109的端部到偏移区域1052的端部的距离为d4。d4优选0.3μm以上。偏移区域1052的宽度d2成为d3+d4。
在图5中,侧壁间隔件108的一个侧壁成为倾斜面。将侧壁间隔件108的侧壁设为倾斜面的理由为,提高以覆盖栅电极109、侧壁间隔件108的方式形成的层间绝缘膜110的阶梯覆盖率。因此,倾斜面并非本发明的必要构成要素。
侧壁间隔件108的厚度例如为100nm至500nm。若侧壁间隔件108的厚度过小,则在通过干蚀刻对侧壁间隔件进行加工时,其会消失。另一方面,在侧壁间隔件108的厚度过大的情况下,会出现覆盖栅电极109、侧壁间隔件108的层间绝缘膜110的台阶式切断的问题、侧壁间隔件108的加工时间变长等问题。另外,若侧壁间隔件108的厚度过大,则在侧壁间隔件108由SiN形成的情况下,会出现来自侧壁间隔件108自身的氢的供给量增多的问题。
以覆盖栅电极109及侧壁间隔件108的方式形成有层间绝缘膜110。层间绝缘膜110通常由SiN和SiO这两层膜形成,但若可以,则较好的是与氧化物半导体105接触的下层由SiN膜形成。SiN膜成为氢的供给体,能够减小氧化物半导体105的漏极区域和源电极区域的电阻。
在图5中,如后所述,侧壁间隔件108的材质根据干蚀刻的微细加工的要求而优选由SiN形成,但根据加工条件,也可以由SiON(氮氧化硅)或SiO形成。在由SiN形成侧壁间隔件108的情况下,构成层间绝缘膜110的SiN与构成侧壁间隔件108的SiN也可以是相同的膜质。但是,优选构成层间绝缘膜110的SiN的氢含量比构成侧壁间隔件108的SiN的氢含量多。也就是说,由于侧壁间隔件108接近沟道,因此较好是抑制来自侧壁间隔件108的氢的供给。
各种SiN均通过CVD形成,而即使是相同的气体比、功率、成膜压力等,也是只要将成膜侧壁间隔件108时的成膜温度设定为高温(例如300℃至350℃)即可。高温成膜的情况下,由于膜的均镀性更好,因此还具有不易形成气坑的优点。
图6是TFT的俯视图。在图6中,在底栅电极102之上隔着底栅极绝缘膜形成有氧化物半导体105。在氧化物半导体105之上以岛状形成有栅极绝缘膜,但在图6中被栅电极109及侧壁间隔件108覆盖而不可见。在图6中,能够在栅电极109的周围看到侧壁间隔件108,其为图5中的侧壁间隔件108的倾斜面。
在栅电极109上形成有凹部1091。在栅电极109的形成有凹部1091的部分形成有氧化物半导体105的沟道,在凹部1091的两侧形成有偏移区域1052。在图6中,构成层间绝缘膜110的SiN与未与栅电极109、侧壁间隔件108重叠的氧化物半导体105接触,氧化物半导体105被从SiN供给的氢还原,形成漏极及源极。在漏极经由贯通孔连接漏电极111,在源极经由贯通孔连接源电极112。
图7至图12是示出实现图5的构成的制造工序的剖视图。在图7中,在基底膜101之上形成有底栅电极102,并以覆盖该底栅电极102的方式形成有第1底栅极绝缘膜103、第2底栅极绝缘膜104,在其上形成有氧化物半导体105。底栅电极102在使用溅射法成膜后进行图案化。第1底栅极绝缘膜103由SiN以例如厚度50nm形成,第2底栅极绝缘膜104由SiO以例如厚度200nm形成。SiN与SiO能够连续地通过CVD形成。
之后在第2底栅极绝缘膜104之上形成氧化物半导体105。氧化物半导体105在以10至100nm成膜后图案化为岛状。之后由SiO在氧化物半导体105之上形成顶栅极绝缘膜(栅极绝缘膜)106。SiO的膜厚例如为100nm。底栅极绝缘膜与顶栅极绝缘膜的膜厚的关系如使用图2所说明。之后通过溅射法形成10至50nm的厚度的AlO膜107。
图8是示出用于形成侧壁间隔件108的中间工序的剖视图。在图8中,通过CVD以100nm至500nm的厚度成膜用于形成侧壁间隔件108的SiN膜。形成该SiN的CVD与形成之后形成的层间绝缘膜110的CVD相比在高温(例如300℃至350℃)下进行。采用更致密的膜质以抑制氢的释放。在图8中,在SiN膜之上形成用于使侧壁间隔件图案化的抗蚀剂400。之后,使用SF6系的气体对SiN膜进行干蚀刻。
图9是示出对侧壁间隔件108用的SiN膜进行干蚀刻后的状态的剖视图。SiN易于通过使用SF6系的气体的干蚀刻而被侧蚀刻。以图9的箭头示出侧蚀刻的情形。通过侧蚀刻,侧壁间隔件108的宽度变得小于抗蚀剂的宽度。侧壁间隔件的宽度在底面处非常小,为0.5μm至2μm,因此难以形成这样的抗蚀剂图案。通过使用SiN,根据侧蚀刻的效果,能够将侧壁间隔件108加工为抗蚀剂的图案化极限以下的尺寸。
将AlO与构成侧壁间隔件的SiN进行对比可知,在使用SF6系气体的干蚀刻中,AlO的选择比与SiN相比非常大,因此在图9所示的干蚀刻工序中,AlO膜基本未被蚀刻。
之后如图10所示,对成为栅电极109的金属或合金进行成膜,在希望作为栅电极109保留的部分形成抗蚀剂400。作为栅电极109,例如使用Mo、MoW或Ti-Al-Ti等层叠膜。并且,通过使用Cl系气体的干蚀刻对金属及AlO膜进行蚀刻,使AlO膜107及栅电极109图案化。在使用Cl系气体的情况下,构成栅极绝缘膜106的SiO虽难以被蚀刻,但由于不是零,因此根据需要在SiO的蚀刻中途使Cl系的干蚀刻停止。
图11是示出通过图10所示的使用Cl系气体的干蚀刻而使栅电极109及AlO膜107图案化后的状态的剖视图。在该状态下,氧化物半导体105由栅极绝缘膜106覆盖。由此,如图11所示,通过F系的干蚀刻对成为栅极绝缘膜的材料的SiO进行蚀刻,使栅极绝缘膜106图案化。在F系的干蚀刻中,氧化物半导体105几乎未被蚀刻。
图12是示出通过F系的干蚀刻将SiO去除以使栅极绝缘膜106图案化后的状态的剖视图。构成侧壁间隔件108的SiN也通过F系的干蚀刻被蚀刻若干,因此在侧壁间隔件108的外侧的壁上形成锥形状。
在图12中,栅电极109残留在截面为梯形状的侧壁间隔件108的上底。该量为d3。d3优选0.1μm以上。优选侧壁间隔件108的下底与侧壁间隔件108的上底的差为0.3μm以上。
之后针对图12的构成形成层间绝缘膜110,则成为图5的构成。层间绝缘膜110由SiN或SiN和SiO的层叠膜形成,而由于层间绝缘膜110会向氧化物半导体105供给氢,因此在采用层叠膜的情况下,最好是与氧化物半导体105接触的层由SiN形成。另外,优选层间绝缘膜110中的SiN的氢的含量比构成侧壁间隔件108的SiN多。
实施例2
图13是表示本发明的实施例2的有机EL显示装置的显示区域的剖视图。在图13中,顶栅极绝缘膜106并非仅形成在栅电极109的下方而是形成在整个面上。另外,侧壁间隔件108的侧面不倾斜。图13的其他构成与图4相同。在图13中,氧化物半导体105的漏极区域及源极区域与层间绝缘膜110不接触。因此,即使由SiN形成层间绝缘膜110,也无法从SiN接受氢。因此,为了形成氧化物半导体105的漏极区域及源极区域,如图14所示,需要另行进行离子注入(I/I)。
图14的剖面构造与实施例1的图11相同。但在图14中,不进行干蚀刻而是进行离子注入(I/I),在氧化物半导体105中掺杂硼(B)或磷(P)等而赋予导电性,在氧化物半导体上形成漏极及源极。需要说明的是,离子注入(I/I)是使氧化物半导体105的构造产生缺陷以赋予导电性,因此也可以注入Ar等。离子注入(I/I)以栅电极109为掩膜来进行。另外,侧壁间隔件108也形成得较厚,而且在该部分也存在AlO膜107,因此在沟道与漏极及源极之间构成中间区域。需要说明的是,在离子注入(I/I)中,侧壁间隔件108未被蚀刻,因此侧壁间隔件108的侧面不易形成图12所示的倾斜。
图15是示出在离子注入后形成层间绝缘膜110并在该层间绝缘膜110上形成贯通孔,连接有漏电极111和源电极112的状态的剖视图。层间绝缘膜110的构成与使用实施例1的图5等说明的内容相同。在实施例2中,氧化物半导体105的漏极区域及源极区域通过离子注入而被赋予导电性。
氧化物半导体105的漏极区域及源极区域由含有大量氧的栅极绝缘膜106覆盖。由此,即使通过离子注入赋予导电性,漏极区域、源极区域也由于氧的影响而存在电阻逐渐上升的可能性。
通过由SiN构成层间绝缘膜110的与栅极绝缘膜106接触的面,从而通过来自SiN的氢的供给来缓和由来自栅极绝缘膜106的氧对氧化物半导体105的漏极及源极的影响。因此能够使TFT的特性稳定化。其他构成与实施例1中说明的内容相同。
实施例3
在实施例1及2中说明了将本发明应用于有机EL显示装置的情况。但本发明也能够应用于液晶显示装置。图16是液晶显示装置的俯视图。在图16中,TFT基板100与对置基板200通过密封材料30粘接,在密封材料30的内侧,在TFT基板100与对置基板200之间夹持有液晶。
在TFT基板100与对置基板200重叠的部分形成有显示区域10。在显示区域10中,扫描线91沿横向(x方向)延伸并沿纵向(y方向)排列。另外,影像信号线92沿纵向延伸并沿横向排列。在由扫描线91和影像信号线92包围的区域中形成有像素95。TFT基板100形成得比对置基板200大,TFT基板100的未与对置基板200重叠的部分成为端子区域20。在端子区域20中连接用于向液晶显示装置供给电源、信号的柔性布线基板600。
图17是液晶显示装置的显示区域的剖视图。在图17中,直到有机平坦化膜110的形成为止与实施例1的图4相同。需要说明的是,实施例1的图4的TFT为驱动有机EL层的驱动TFT,而本实施例的TFT为开关TFT,但基本构成相同。
即,在兼作为遮光膜的第1栅电极102之上形成有双层构成的底栅极绝缘膜(103、104),在其上形成有氧化物半导体105。在氧化物半导体105中的与沟道对应的部分形成顶栅极绝缘膜106。在顶栅极绝缘膜106之上形成AlO膜107。并且,在AlO膜107的上部两端形成作为本发明的特征的侧壁间隔件108。之后形成栅电极109。
以覆盖栅电极109、侧壁间隔件108、氧化物半导体105等的方式形成层间绝缘膜110。层间绝缘膜110的构成也与使用图5说明的内容相同。并且,在层间绝缘膜110上形成贯通孔,以使氧化物半导体105的漏极与漏电极111连接、使氧化物半导体105的源极与源电极112连接。以覆盖漏电极111、源电极112、层间绝缘膜110的方式形成有机平坦化膜113。
在图17中,在有机平坦化膜113之后形成的构成与图4所示的有机EL显示装置不同。图17是IPS(In Plane Switching:共面转换)方式的液晶显示装置的剖视图。在图17中,在有机平坦化膜113上形成用于连接源电极112与像素电极152的贯通孔。在图17中,在有机平坦化膜113之上形成有由ITO形成的公共电极150。由SiN以覆盖公共电极150的方式形成电容绝缘膜151。
在电容绝缘膜151之上形成有像素电极152。像素电极152在有机平坦化膜113上形成的贯通孔中与源电极112连接。需要说明的是,电容绝缘膜151覆盖有机平坦化膜113的贯通孔的侧壁,但在下部形成贯通孔,以使得像素电极152能够与源电极112连接。在像素电极152之上形成有用于使液晶初始取向的取向膜153。
夹着液晶层300而以与TFT基板100相对的方式形成有对置基板200。在对置基板200的内侧形成有黑矩阵202,在与像素电极122对应的部分形成有彩色滤光片201。以覆盖黑矩阵202及彩色滤光片201的方式形成有顶涂膜203。为了使液晶初始取向而在顶涂膜203之上形成有取向膜204。
在图17中,在向像素电极122施加影像信号时产生如箭头所示的电力线,使液晶分子301旋转,控制像素中的来自背光源的光的透射率,以形成图像。
如上所述,在液晶显示装置中也能够通过应用实施例1的构成的TFT来形成特性稳定的使用氧化物半导体的TFT。在实施例2中说明的构成也同样地能够应用于液晶显示装置。
在以上的说明中,说明了IPS方式的液晶显示装置,但也能够应用于其他方式的液晶显示装置。
氧化物半导体能够减小漏电流,但由于迁移率小于多晶硅,因此存在难以由使用氧化物半导体的TFT构成周边驱动电路例如图1中的扫描线驱动电路80的情况。在这一点上,多晶硅由于迁移率大,因此能够将使用多晶硅的TFT应用于周边驱动电路。
另一方面,使用多晶硅的TFT的漏电流较大,因此像素电极的电位变化成为问题。因此,显示区域中的像素应用使用氧化物半导体的TFT,而周边驱动电路中应用使用多晶硅的TFT是合理的。将这样的构成称为混合式,本发明也能够应用于这样的混合式的显示装置。
附图标记说明
10…显示区域、20…端子区域、30…密封材料、80…扫描线驱动电路、91…扫描线、92…影像信号线、93…电源线、95…像素、100…TFT基板、101…基底膜、102…底栅电极、103…第1底栅极绝缘膜、104…第2底栅极绝缘膜、105…氧化物半导体、106…栅极绝缘膜、107…AlO膜、108…侧壁间隔件、109…栅电极、110…层间绝缘膜、111…漏电极、112…源电极、113…有机平坦化膜、114…下部电极、115…隔堤、116…有机EL层、117…上部电极、118…保护膜、119…粘合材料、120…圆偏振片、150…公共电极、151…电容绝缘膜、152…像素电极、153…取向膜、200…对置基板、201…彩色滤光片、202…黑矩阵、203…顶涂膜、204…取向膜、300…液晶层、400…抗蚀剂、301…液晶分子、1051…沟道、1052…偏移区域、1091…栅电极的凹部、I/I…离子注入。
Claims (17)
1.显示装置,其形成有多个具有由氧化物半导体构成的薄膜晶体管(TFT)的像素,所述显示装置的特征在于,
在所述氧化物半导体之上形成有栅极绝缘膜,
在所述栅极绝缘膜之上形成有氧化铝膜,
在所述氧化铝膜之上形成有栅电极,
在所述栅电极的两侧形成有侧壁间隔件,
以覆盖所述栅电极、所述侧壁间隔件以及源极及漏极的方式形成有层间绝缘膜,
在俯视观察时,在连结所述漏极与所述源极的方向上,所述栅电极的宽度小于所述氧化铝膜的宽度,
所述氧化物半导体中形成有沟道,在所述沟道的两侧形成有所述漏极及所述源极,在所述沟道与所述漏极之间及所述沟道与所述源极之间形成有中间区域,
在所述氧化物半导体的所述沟道与所述中间区域之上形成有栅极绝缘膜,
在所述沟道的上方且在所述氧化铝膜之上形成有栅电极,
所述沟道具有沟道长度和沟道宽度,在将所述侧壁间隔件的与所述氧化铝膜接触的一侧设为底部、将所述侧壁间隔件的与所述底部相反的一侧设为上部时,所述底部在所述沟道长度方向上的长度大于所述上部在所述沟道长度方向上的长度。
2.根据权利要求1所述的显示装置,其特征在于,在俯视观察时,在所述氧化物半导体与所述栅电极和所述氧化铝膜相接触的部分重叠的部分形成有所述沟道,同样地,在所述氧化物半导体与所述侧壁间隔件和所述氧化铝膜相接触的部分重叠的部分形成有所述中间区域。
3.根据权利要求1所述的显示装置,其特征在于,所述层间绝缘膜与所述氧化物半导体的所述漏极及所述源极直接接触。
4.根据权利要求3所述的显示装置,其特征在于,所述层间绝缘膜中与所述漏极及所述源极接触的部分由SiN形成。
5.根据权利要求1所述的显示装置,其特征在于,所述层间绝缘膜的氢含量大于所述侧壁间隔件的氢含量。
6.根据权利要求1所述的显示装置,其特征在于,所述氧化物半导体中的氢含量的顺序为所述沟道<所述中间区域<漏极及源极。
7.根据权利要求1所述的显示装置,其特征在于,所述底部在所述沟道长度方向上的长度比所述上部在所述沟道长度方向上的长度大0.3μm以上。
8.根据权利要求1所述的显示装置,其特征在于,所述侧壁间隔件的高度为100nm至500nm。
9.根据权利要求1所述的显示装置,其特征在于,所述侧壁间隔件的与所述层间绝缘膜接触的一侧的侧面成为倾斜面。
10.根据权利要求1所述的显示装置,其特征在于,所述氧化物半导体的所述漏极及所述源极由所述栅极绝缘膜覆盖,所述层间绝缘膜与所述栅极绝缘膜接触。
11.根据权利要求10所述的显示装置,其特征在于,所述层间绝缘膜的与所述栅极绝缘膜接触的部分由SiN形成。
12.根据权利要求10所述的显示装置,其特征在于,所述层间绝缘膜的氢含量大于所述侧壁间隔件的氢含量。
13.根据权利要求1所述的显示装置,其特征在于,所述显示装置为有机EL显示装置。
14.根据权利要求1所述的显示装置,其特征在于,所述显示装置为液晶显示装置。
15.显示装置,其形成有多个具有由氧化物半导体构成的薄膜晶体管(TFT)的像素,所述显示装置的特征在于,
在所述氧化物半导体之上形成有栅极绝缘膜,
在所述栅极绝缘膜之上形成有氧化铝膜,
在所述氧化铝膜之上形成有栅电极,
在所述栅电极的两侧形成有侧壁间隔件,
以覆盖所述栅电极、所述侧壁间隔件以及源极及漏极的方式形成有层间绝缘膜,
在俯视观察时,在连结所述漏极与所述源极的方向上,所述栅电极的宽度小于所述氧化铝膜的宽度,
形成所述栅电极的金属覆盖所述侧壁间隔件的侧面并延伸至所述侧壁间隔件的上表面。
16.根据权利要求15所述的显示装置,其特征在于,形成所述栅电极的金属在所述侧壁间隔件的所述上表面上延伸的量为0.1μm以上。
17.根据权利要求15所述的显示装置,其特征在于,沟道具有沟道长度和沟道宽度,在将所述侧壁间隔件的与所述氧化铝膜接触的一侧设为底部、将所述侧壁间隔件的与所述底部相反的一侧设为上部时,所述底部在所述沟道长度方向上的长度大于所述上部在所述沟道长度方向上的长度。
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