CN111446349A - L ED packaging substrate - Google Patents
L ED packaging substrate Download PDFInfo
- Publication number
- CN111446349A CN111446349A CN202010273223.0A CN202010273223A CN111446349A CN 111446349 A CN111446349 A CN 111446349A CN 202010273223 A CN202010273223 A CN 202010273223A CN 111446349 A CN111446349 A CN 111446349A
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- Prior art keywords
- package substrate
- packaging
- drying
- etching
- substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000003292 glue Substances 0.000 claims abstract description 16
- 239000003822 epoxy resin Substances 0.000 claims abstract description 11
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000000741 silica gel Substances 0.000 claims abstract description 10
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000748 compression moulding Methods 0.000 claims description 4
- 229910001369 Brass Inorganic materials 0.000 claims description 3
- 239000010951 brass Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000008399 tap water Substances 0.000 claims description 3
- 235000020679 tap water Nutrition 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- 238000007723 die pressing method Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000012858 packaging process Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000003825 pressing Methods 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000003223 protective agent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Packages (AREA)
Abstract
The invention discloses an L ED packaging substrate which is characterized by comprising the steps of (A) selecting a copper sheet, (B) etching the copper sheet, (C) uniformly mixing silicon resin, epoxy resin and silica gel, and carrying out die pressing, (D) removing glue, (E) electroplating, and (F) packaging, wherein glue adopted by a die pressing of the L ED packaging substrate is the same as packaging glue adopted by packaging, a common layer can be formed after heating and curing, the bonding property of the packaging glue and the substrate is effectively improved, the peeling of the packaging device crystal fixing glue can be effectively prevented, a lamp is prevented from being killed, the glue is not easy to fall off in the packaging process, the product quality is good, and the manufacturing cost of the L ED packaging substrate is low.
Description
Technical Field
The invention relates to the technical field of L ED packaging devices, in particular to a L ED packaging substrate.
Background
L ED has been widely used because of its small volume, high light efficiency and long life, and is widely used in such areas as car and indoor lighting, traffic lights, screen display and liquid crystal backlight, the packaging process is a very important process in L ED process, and it has a very significant impact on the work performance, cost, etc. at present L ED package is developed gradually toward small-size high-power direction, at present, a film manufacturing method is commonly used in L ED industry to perform L ED packaging operation, a film manufacturing type L ED package device needs to use a BT board in the process, in the prior art, the BT board basically adopts a white core board and a black core board as substrates, and the BT board is manufactured by processes of drilling, dry film pressing, exposure, developing, etching, film stripping, acid pickling, etc. for L ED package, in the prior art, the BT board generally uses Mitsubishi, has a high cost, and in L ED package process, L ED package usually adopts silicone resin, epoxy resin, 3, and the BT resin is easily stripped from a white core board, and the package substrate is easily stripped off, and the package quality of the white core board is easily caused by a dead glass substrate.
In summary, there is a need in the art for a substrate that improves the manufacturing process, improves the bonding with the encapsulation glue, and reduces the manufacturing cost.
Disclosure of Invention
In view of the above, the main objective of the present invention is to provide an L ED package substrate, which is manufactured by selecting a copper sheet as a substrate, performing etching treatment, performing die pressing with silica gel, silicone resin, and epoxy resin, forming the substrate, and performing processes such as adhesive removal, electroplating, and packaging, wherein the adhesive used for die pressing of the L ED package substrate is the same as the package adhesive used for packaging, and forms a common layer after heating and curing.
In order to achieve the above object, the present invention provides an L ED package substrate, the manufacturing method thereof includes the steps of:
(A) selecting copper sheets;
(B) etching the copper sheet;
(C) uniformly mixing the silicon resin, the epoxy resin and the silica gel, and performing compression molding treatment;
(D) removing glue;
(E) electroplating;
(F) and (6) packaging.
Preferably, the step (C) includes the steps of:
(C1) uniformly mixing the silicon resin, the epoxy resin and the silica gel in proportion;
(C2) defoaming by a vacuum defoaming machine;
(C3) and adding the mixture into a cylinder of a molding press for molding, and molding the substrate after the molding is finished.
Preferably, the mold temperature in the step (C3) is 120-150 ℃; the mold closing time of the press mold is 1 to 10 minutes.
Preferably, the thickness of the copper sheet selected in the step (A) is in the range of 0.1-0.3mm, and the copper sheet material is selected from one of brass, red copper and red copper.
Preferably, the etching thickness of the etching treatment of the step (B) is in the range of 0.05-0.1mm, and the etching angle is 0.1 mm.
Preferably, the step (B) includes the steps of: (B1) a material; (B2) cutting; (B3) cleaning; (B3) coarsening the light-resistant printing ink or the dry film; (B4) exposing; (B5) developing; (B6) FQC; (B7) etching; (B8) demoulding; (B9) cleaning; (B10) drying; (B11) OQC; (B12) testing; (B13) and (6) packaging.
Preferably, the step (D) includes: (D1) ultrasonic waves; (D2) washing with a water jet; (D3) washing with water; (D4) and (5) drying.
Preferably, the parameters of the water jet washing in the step (D2) are 1S-3S, and the maximum pressure is 4 kg; the step (D3) of water washing can adopt tap water or pure water; the step (D4) adopts a drying furnace, the drying temperature is 60-70 ℃, and the drying time is 1-10 min; and (5) drying until the surface is dry.
Preferably, the step (E) comprises: (E1) feeding; (E2) degreasing; (E3) chemical grinding; (E4) nickel plating; (E5) silver plating; (E6) desilverizing; (E7) silver protection; (E8) drying; (E9) and (6) receiving materials.
Preferably, the nickel plating in the step (E4) is performed to form a nickel layer with the thickness of 1u 'to 30 u'; the silver layer formed by silver plating in the step (E5) has the thickness of 10u 'to 180 u'; the concentration of the silver protective agent adopted in the step (E7) is 8-40 mol, and the time is 8-70 s; the step (E8) adopts an oven, and the temperature is 140 +/-30 ℃.
Compared with the prior art, the L ED package substrate has the advantages that glue used for the L ED package substrate pressing die is the same as package glue used for packaging, a common layer can be formed after heating and curing, the bonding performance of the package glue and the substrate is effectively improved, the peeling of die bond glue of a package device can be effectively prevented, the lamp is prevented from being dead, the glue is not easy to fall off in the packaging process, the product quality is good, and the manufacturing cost of the L ED package substrate is low.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flow chart of a manufacturing method of an L ED package substrate according to the present invention.
Fig. 2 is a schematic structural diagram of an L ED package substrate according to the present invention.
Detailed Description
As shown in fig. 1, a manufacturing method of an L ED package substrate of the invention includes the steps of:
(G) selecting copper sheets;
(H) etching the copper sheet;
(I) uniformly mixing the silicon resin, the epoxy resin and the silica gel, and performing compression molding treatment;
(J) removing glue;
(K) electroplating;
(L) packaging.
Wherein, the thickness range of the copper sheet selected in the step (A) is 0.1-0.3mm, and the copper sheet material can be selected from brass, red copper and red copper.
The etching thickness range of the etching treatment in the step (B) is 0.05-0.1mm, and the etching angle is 0.1 mm.
The step (B) includes the steps of:
(B1) a material; (B2) cutting; (B3) cleaning; (B3) coarsening the light-resistant printing ink or the dry film; (B4) exposing; (B5) developing; (B6) FQC; (B7) etching; (B8) demoulding; (B9) cleaning; (B10) drying; (B11) OQC; (B12) testing; (B13) and (6) packaging.
The step (C) includes the steps of:
(C1) uniformly mixing the silicon resin, the epoxy resin and the silica gel in proportion;
(C2) defoaming by a vacuum defoaming machine;
(C3) and adding the mixture into a cylinder of a molding press for molding, and molding the substrate after the molding is finished.
And (C1) uniformly mixing the silicone resin, the epoxy resin and the silica gel in the step (C1) according to a certain proportion, wherein the specific mixing proportion can be adjusted according to requirements.
The mold temperature in the step (C3) is 120-150 ℃. The mold closing time of the press mold is 1 to 10 minutes. The colloid used for the pressing die can fill the etched part of the copper sheet.
The step (D) includes:
(D1) ultrasonic waves; (D2) washing with a water jet; (D3) washing with water; (D4) and (5) drying.
And (D2) the parameters of water jet flushing in the step (D2) are 1S-3S, and the maximum pressure is 4 kg.
The step (D3) of water washing can adopt tap water or pure water.
And (D4) adopting a drying furnace, wherein the drying temperature is 60-70 ℃, and the drying time is 1-10 min. Drying until the surface is dry can be stopped.
The step (E) includes:
(E1) feeding; (E2) degreasing; (E3) chemical grinding; (E4) nickel plating; (E5) silver plating; (E6) desilverizing; (E7) silver protection; (E8) drying; (E9) and (6) receiving materials.
The nickel layer formed by nickel plating in the step (E4) has the thickness of 1u 'to 30 u'.
The silver layer formed by silver plating in the step (E5) has a thickness of 10u 'to 180 u'.
The concentration of the silver protective agent adopted in the step (E7) is 8-40 mol, and the time is 8-70 s.
The step (E8) adopts an oven, and the temperature is 140 +/-30 ℃.
The L ED packaging substrate manufactured by the method adopts the compression molding adhesive mixed by silicon resin, epoxy resin and silica gel, and the packaging adhesive adopted in L ED packaging adopts the glue of the same material, so that a common layer can be formed after a heating and curing process in packaging, the associativity is better, and the problem of lamp death caused by layering can be prevented.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An L ED package substrate, the manufacturing method thereof comprises the steps of:
(A) selecting copper sheets;
(B) etching the copper sheet;
(C) uniformly mixing the silicon resin, the epoxy resin and the silica gel, and performing compression molding treatment;
(D) removing glue;
(E) electroplating;
(F) and (6) packaging.
2. The L ED package substrate of claim 1, wherein the step (C) includes the steps of:
(C1) uniformly mixing the silicon resin, the epoxy resin and the silica gel in proportion;
(C2) defoaming by a vacuum defoaming machine;
(C3) and adding the mixture into a cylinder of a molding press for molding, and molding the substrate after the molding is finished.
3. The L ED package substrate of claim 2, wherein the temperature of the stamper in step (C3) is 120 ℃. The clamping time of the stamper is 1-10 minutes.
4. The L ED package substrate of claim 1, wherein the copper sheet selected in step (A) has a thickness in the range of 0.1-0.3mm, and the copper sheet material is selected from one of brass, red copper and red copper.
5. The L ED package substrate of claim 1, wherein the etching thickness of the etching process of step (B) is in the range of 0.05-0.1mm and the etching angle is 0.1 mm.
6. The L ED package substrate of claim 1, wherein the step (B) comprises the steps of (B1) material, (B2) cutting, (B3) cleaning, (B3) roughening light-resistant ink or dry film, (B4) exposing, (B5) developing, (B6) FQC, (B7) etching, (B8) stripping, (B9) cleaning, (B10) drying, (B11) OQC, (B12) testing, and (B13) packaging.
7. The L ED package substrate of claim 1, wherein the step (D) includes (D1) ultrasonic, (D2) water-knife rinsing, (D3) water rinsing, and (D4) drying.
8. The L ED package substrate of claim 7, wherein the parameters of the step (D2) of rinsing with water are 1S-3S and the maximum pressure is 4 kg, the step (D3) of rinsing with tap water or pure water is performed, the step (D4) of drying with oven at 60-70 ℃ for 1-10min is performed, and drying is stopped until surface drying.
9. The L ED package substrate of claim 1, wherein the step (E) comprises (E1) loading, (E2) degreasing, (E3) chemical grinding, (E4) nickel plating, (E5) silver plating, (E6) desilvering, (E7) silver protection, (E8) drying, and (E9) receiving.
10. The L ED package substrate of claim 9, wherein the nickel layer formed by nickel plating in step (E4) has a thickness of 1u "-30 u", the silver layer formed by silver plating in step (E5) has a thickness of 10u "-180 u", the silver protectant used in step (E7) has a concentration of 8-40 mol for a time of 8-70 s, and the oven used in step (E8) has a temperature of 140 ± 30 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010273223.0A CN111446349A (en) | 2020-04-09 | 2020-04-09 | L ED packaging substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010273223.0A CN111446349A (en) | 2020-04-09 | 2020-04-09 | L ED packaging substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111446349A true CN111446349A (en) | 2020-07-24 |
Family
ID=71656003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010273223.0A Pending CN111446349A (en) | 2020-04-09 | 2020-04-09 | L ED packaging substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111446349A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889561A (en) * | 2021-09-30 | 2022-01-04 | 深圳市电通材料技术有限公司 | Packaging substrate manufacturing method and packaging substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202142577U (en) * | 2011-06-21 | 2012-02-08 | 深圳市天电光电科技有限公司 | An LED support mass production sheet, a single LED support and an LED packaging structure |
| CN103855275A (en) * | 2013-12-25 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED packaging support module, LED packaging support single body and LED packaging structure |
| CN206595282U (en) * | 2017-03-04 | 2017-10-27 | 深圳市斯迈得半导体有限公司 | Surface mount type LED support structure |
| CN108642538A (en) * | 2018-05-24 | 2018-10-12 | 中山品高电子材料有限公司 | The electroplating technology of high-power LED bracket |
-
2020
- 2020-04-09 CN CN202010273223.0A patent/CN111446349A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202142577U (en) * | 2011-06-21 | 2012-02-08 | 深圳市天电光电科技有限公司 | An LED support mass production sheet, a single LED support and an LED packaging structure |
| CN103855275A (en) * | 2013-12-25 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED packaging support module, LED packaging support single body and LED packaging structure |
| CN206595282U (en) * | 2017-03-04 | 2017-10-27 | 深圳市斯迈得半导体有限公司 | Surface mount type LED support structure |
| CN108642538A (en) * | 2018-05-24 | 2018-10-12 | 中山品高电子材料有限公司 | The electroplating technology of high-power LED bracket |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889561A (en) * | 2021-09-30 | 2022-01-04 | 深圳市电通材料技术有限公司 | Packaging substrate manufacturing method and packaging substrate |
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Application publication date: 20200724 |
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