CN112331565A - High-density lead frame etching method - Google Patents
High-density lead frame etching method Download PDFInfo
- Publication number
- CN112331565A CN112331565A CN202011146339.4A CN202011146339A CN112331565A CN 112331565 A CN112331565 A CN 112331565A CN 202011146339 A CN202011146339 A CN 202011146339A CN 112331565 A CN112331565 A CN 112331565A
- Authority
- CN
- China
- Prior art keywords
- finished product
- product area
- corrosion
- copper strip
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 239000010949 copper Substances 0.000 claims abstract description 34
- 238000005260 corrosion Methods 0.000 claims abstract description 25
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 239000011241 protective layer Substances 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 238000005507 spraying Methods 0.000 claims abstract description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 230000008961 swelling Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- ing And Chemical Polishing (AREA)
Abstract
A high-density lead frame etching method relates to the technical field of semiconductor integrated circuits. The method comprises the following steps: s1: cleaning the copper strip; s2: extruding the dry film on a copper strip, wherein the copper strip is divided into a finished product area and a non-finished product area, the copper strip in the non-finished product area is bonded with the dry film through glue, and then, irradiating through ultraviolet light to form a corrosion-resistant protective layer; s3: covering the drawn product pattern on the protective layer of the finished product area, and then exposing and developing to obtain an anti-corrosion mask; s4: spraying the etching solution on the surface of the copper strip for corrosion, removing the metal on the part where the corrosion-resistant mask is not formed, and stripping the corrosion-resistant mask to obtain a lead frame; and S5, cutting off the non-finished product area in the peripheral direction of the lead frame. The copper strip is divided into a finished product area and a non-finished product area, the non-finished product area is bonded with the dry film through glue, and the non-product area is removed after the product is formed, so that the copper surface and the dry film are better attached, the normal production of high-precision and low-line-spacing products is realized, and the product quality is ensured.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits, in particular to a high-density lead frame etching method.
Background
The lead frame is used as a chip carrier of a semiconductor integrated circuit, is a key structural member for realizing the electrical connection between a leading-out end of an internal circuit of a chip and an external lead by means of bonding materials (gold wires, aluminum wires and copper wires) to form an electrical circuit, plays a role of a bridge connected with an external lead, is an important basic material in the electronic information industry, and is widely applied to electronic products.
With the further expansion of the market of handheld electronic products such as mobile phones and tablet computers, people put forward more rigorous requirements on the size, thickness and weight of the equipment, namely thinness, lightness and good heat dissipation, so that the distance between leads of the existing lead frame is smaller than 0.05mm and far smaller than the 012mm distance of the traditional lead frame, and therefore, better requirements are put forward on the technical process.
The etching technological process of the lead frame in the prior art mainly comprises the technological processes of surface treatment, film sticking, exposure, development, etching, inspection and the like, wherein the film sticking in the prior art is directly stuck on the surface of a copper plate through a film sticking machine, the cohesiveness between the copper plate and the film sticking machine is poor, and the deviation is easily generated, so that the product quality is influenced.
Disclosure of Invention
The invention aims to provide a high-density lead frame etching method which can effectively solve the problems in the background art.
The technical scheme for realizing the purpose is as follows: the high-density lead frame etching method is characterized by comprising the following steps of:
s1: cleaning the copper strip, and removing dust on the surface;
s2: extruding the dry film on a copper strip by a film sticking machine, wherein the copper strip is divided into a finished product area and a non-finished product area, the non-finished product area is arranged in the circumferential direction of the finished product area, the copper strip and the dry film in the non-finished product area are bonded by glue, and then a polymerization reaction is carried out by ultraviolet irradiation to form a corrosion-resistant protective layer;
s3: covering the drawn product pattern on the protective layer of the finished product area, and then exposing and developing to obtain an anti-corrosion mask meeting the size requirement, wherein the etching allowance is reserved in the anti-corrosion mask, and the size of the allowance is 60-70% of the thickness of the copper strip;
s4: spraying the etching solution on the surface of the copper strip for corrosion, removing the metal on the part where the corrosion-resistant mask is not formed, and stripping the corrosion-resistant mask to obtain a lead frame;
and S5, cutting off the non-finished product area in the peripheral direction of the lead frame.
Further, the etching solution is an acidic copper chloride etching solution.
Further, the temperature of the etching solution is 40-55 ℃.
Further, stripping is achieved by swelling the corrosion mask by soaking in NaOH solution at 50-60 ℃ in step S4.
Further, the thickness of the copper strip is 0.1-0.25 mm.
The invention transfers the product pattern to the metal copper plate through the exposure and development process, protects the area to be etched, removes the protective film from the unnecessary area to expose the metal part, and then uses the copper chloride etching solution to corrode, thereby forming the concave-convex half-etched or hollowed-out formed lead frame.
The copper strip is divided into a finished product area and a non-finished product area, the non-finished product area is bonded with the dry film through glue, and the non-product area is removed after the product is formed, so that the copper surface and the dry film are better attached, the normal production of high-precision and low-line-spacing products is realized, and the product quality is ensured.
Drawings
Fig. 1 is a schematic structural diagram of a copper strip.
Detailed Description
The invention discloses a high-density lead frame etching method, which comprises the following steps:
s1: cleaning the copper strip 1, and removing dust on the surface;
s2: extruding the dry film on a copper strip 1 with the thickness of 0.1-0.25mm by a film sticking machine, wherein the copper strip 1 is divided into a finished product area 1.1 and a non-finished product area 1.2, the non-finished product area 1.2 is arranged in the circumferential direction of the finished product area 1.1, the copper strip 1 in the non-finished product area 1.2 is bonded with the dry film by glue, and then, ultraviolet irradiation is carried out to carry out polymerization reaction to form a corrosion-resistant protective layer;
s3: covering the drawn product pattern on the protective layer of the finished product area, and then exposing and developing to obtain an anti-corrosion mask meeting the size requirement, wherein the etching allowance is reserved in the anti-corrosion mask, and the size of the allowance is 60-70% of the thickness of the copper strip;
s4: spraying acidic copper chloride etching solution with the temperature of 40-55 ℃ onto the surface of the copper strip for corrosion, removing the metal on the part where the corrosion-resistant mask is not formed, and soaking in NaOH solution with the temperature of 50-60 ℃ to ensure that the corrosion-resistant mask expands and peels off to obtain a lead frame;
and S5, cutting and removing the non-finished product area 1.2 in the peripheral direction of the lead frame.
Claims (5)
1. The high-density lead frame etching method is characterized by comprising the following steps of:
s1: cleaning the copper strip, and removing dust on the surface;
s2: extruding the dry film on a copper strip by a film sticking machine, wherein the copper strip is divided into a finished product area and a non-finished product area, the non-finished product area is arranged in the circumferential direction of the finished product area, the copper strip and the dry film in the non-finished product area are bonded by glue, and then a polymerization reaction is carried out by ultraviolet irradiation to form a corrosion-resistant protective layer;
s3: covering the drawn product pattern on the protective layer of the finished product area, and then exposing and developing to obtain an anti-corrosion mask meeting the size requirement, wherein the etching allowance is reserved in the anti-corrosion mask, and the size of the allowance is 60-70% of the thickness of the copper strip;
s4: spraying the etching solution on the surface of the copper strip for corrosion, removing the metal on the part where the corrosion-resistant mask is not formed, and stripping the corrosion-resistant mask to obtain a lead frame;
and S5, cutting off the non-finished product area in the peripheral direction of the lead frame.
2. The method of claim 1, wherein the etching solution is an acidic copper chloride etching solution.
3. The method of etching a high-density lead frame according to claim 1, wherein the temperature of the etching solution is 40 to 55 °.
4. The method of etching high-density lead frames according to claim 1, wherein the step S4 is performed by swelling the corrosion-resistant mask by soaking in NaOH solution at 50-60 ℃.
5. The method of claim 1, wherein the copper tape has a thickness of 0.1-0.25 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011146339.4A CN112331565A (en) | 2020-10-23 | 2020-10-23 | High-density lead frame etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011146339.4A CN112331565A (en) | 2020-10-23 | 2020-10-23 | High-density lead frame etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112331565A true CN112331565A (en) | 2021-02-05 |
Family
ID=74312102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011146339.4A Withdrawn CN112331565A (en) | 2020-10-23 | 2020-10-23 | High-density lead frame etching method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112331565A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116525497A (en) * | 2023-05-15 | 2023-08-01 | 天水华洋电子科技股份有限公司 | Lead frame roll-type etching process |
-
2020
- 2020-10-23 CN CN202011146339.4A patent/CN112331565A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116525497A (en) * | 2023-05-15 | 2023-08-01 | 天水华洋电子科技股份有限公司 | Lead frame roll-type etching process |
| CN116525497B (en) * | 2023-05-15 | 2023-09-29 | 天水华洋电子科技股份有限公司 | Lead frame roll-type etching process |
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Legal Events
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| PB01 | Publication | ||
| PB01 | Publication | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20210205 |