CN114899108A - Manufacturing method of lead frame for etching gasket in small-shape package - Google Patents
Manufacturing method of lead frame for etching gasket in small-shape package Download PDFInfo
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- CN114899108A CN114899108A CN202210454561.3A CN202210454561A CN114899108A CN 114899108 A CN114899108 A CN 114899108A CN 202210454561 A CN202210454561 A CN 202210454561A CN 114899108 A CN114899108 A CN 114899108A
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- Prior art keywords
- lead frame
- etching
- dry film
- copper material
- copper
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- 238000005530 etching Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 238000009713 electroplating Methods 0.000 claims abstract description 4
- 238000003825 pressing Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 34
- 239000000243 solution Substances 0.000 claims description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 8
- 239000002390 adhesive tape Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000001746 injection moulding Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 claims 1
- 230000000379 polymerizing effect Effects 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000002385 metal-ion deposition Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a method for manufacturing a lead frame for etching a gasket in a small-outline package, which comprises the following steps: selecting raw materials, cleaning, pressing a dry film, exposing, developing, etching, stripping, electroplating, tape pasting and the like to finally obtain the lead frame. In the etching step of the method, the gasket below the radiating fin in the lead frame is etched, so that the SOP lead frame can realize the single quantity of the QFN lead frames, and the problems of sparse arrangement, few quantity and the like of the SOP lead frame are solved.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a manufacturing method of a lead frame for etching a gasket in small-outline packaging.
Background
As the variety of frames in the semiconductor industry continues to increase, different types of packaging have evolved. Besides the existing QFN, LQFP, TSSOP series, there is a common component form, i.e., SOP series Package (Small Out-Line Package), which is one of surface mount packages, and leads are led Out from both sides of the Package in gull-wing (L-shaped)). The SOP series frame has the design of runner, slot and the like, so that the Unit arrangement on the frame is relatively dispersed. As shown in fig. 1, the number of units on the SOP frame is much lower than that of another mount-type Package, i.e., QFN (Quad Flat No-leads Package), so that the utilization rate of the whole frame is greatly reduced and the packaging cost is high.
Disclosure of Invention
The invention aims to provide a method for manufacturing a lead frame of a gasket in an etched small-outline package, which aims to solve the problems of less distribution quantity and lower utilization rate of SOP series packages in the prior art.
In order to solve the above problems, the present invention provides a method for manufacturing a lead frame by etching a pad in a Small Outline Package (SOP), the method comprising the steps of:
s1, selecting raw materials: the product is a high-precision copper material with a certain thickness;
cleaning before S2: the surface of the copper material is cleaned in an alkaline oil removal mode, so that oil stains, oxidation points and attachments on the surface of the copper material are effectively removed, and the bonding property of the copper material is improved;
s3 press-drying the film: the upper surface and the lower surface of the cleaned copper material are simultaneously covered with a layer of high polymer photosensitive material;
s4 exposure: using an exposure machine to carry out polymerization reaction on a photosensitive substance in a photosensitive dry film so as to transfer a designed pattern onto the photosensitive dry film;
s5 developing: stripping the unexposed dry film by using a developing solution to realize the complete display of the lead frame image;
s6 etching: spraying an etching solution on the surface of a copper material in a spraying mode, and etching the copper surface which is not protected by a photosensitive dry film by utilizing the chemical reaction of the etching solution and copper so as to etch away a gasket below a radiating fin in a lead frame, namely removing a convex part of the lead frame by etching, so that the SOP lead frame can be changed into an arrangement mode of a QFN lead frame, and the number of single units on a single frame is increased;
s7 demoulding: spraying NaOH or KOH solution on a dry film through a film removing machine, and removing the dry film by utilizing the chemical reaction of the solution and the dry film to finish the manufacturing of the circuit;
s8 electroplating: the surface to be electroplated of the frame is accurately aligned with the silica gel mask, so that the frame and the conductive position form a cathode and an anode, metal ion deposition is completed, and the weldability is improved;
s9 taping: the back of the product is pasted with a layer of high-temperature resistant adhesive tape, so that a closed area is formed on the back of the product, protection is formed during injection molding, the effect of no material overflow during injection molding is achieved, and the hardness is increased in the routing process, so that bonding of bonding wires is facilitated;
and S10, finishing the manufacture, and obtaining the improved SOP series lead frame.
Preferably, in the step S1, the thickness of the copper material is one of 0.1mm, 0.127mm, 0.152mm and 0.203 mm.
Preferably, in step S2, the cleaning is performed by using a roll-type cleaning device, and the cleaning speed can reach 4 m/min.
Preferably, the step S3 is performed in a dustless, constant temperature, constant humidity, yellow light environment.
Preferably, in step S4, the exposure machine is an LDI (LASER DIRECT IMAGING laser direct imaging) direct writing type exposure machine, in which the photosensitive material is attached to the copper material to form a protective layer.
Preferably, in step S5, a full-automatic roll-to-roll/plate double-sided development line is adopted, so that two process options of roll-to-plate type can be realized, the development speed reaches 5 m/min, and clean production is realized.
Preferably, in step S6, a double-sided etching process is used to etch the excess copper material outside the functional region of the lead frame with the etching solution. The frame arrangement after etching can be arranged in a QFN form; the etching adopts an eight-bin vacuum etching machine, and the etching machine is equipment integrating vacuum etching and demoulding sand blasting.
Preferably, in step S9, a QFN taping machine is used to tape, so that actions such as automatic feeding and replenishment, roller film sticking, manipulator feeding and discharging can be realized.
Preferably, the etching solution is a mixed solution of hydrochloric acid and sodium chlorate.
Preferably, the high temperature resistant adhesive tape is made of polyimide.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the gasket below the radiating fin in the QFN lead frame is etched, so that the lead frame design of the SOP can be converted into the design of the QFN frame, after the same SOP product is converted into the QFN product, the number of units on a single frame is increased, and meanwhile, the product performance of the QFN package is consistent with that of the SOP product, thereby greatly reducing the package cost of the product.
Drawings
FIG. 1 is a diagram comparing the arrangement of single units of SOP lead frame and QFN lead frame
FIG. 2 is a schematic diagram of a process for manufacturing a high-precision etched metal lead frame
FIG. 3 is a comparison of before and after etching of a spacer
1 copper material
2 upper surface of copper material
Lower surface of 3 copper material
4 high molecular photosensitive material
5 silica gel mask
6 high temperature resistant adhesive tape
Detailed Description
The technical solution in the embodiments of the present invention is described in detail below. The described embodiments are only some embodiments of the invention, and not all embodiments. Other embodiments, which can be obtained by those skilled in the art without any creative effort, based on the embodiments in the present invention, belong to the protection scope of the present invention.
A method of forming a lead frame with etched pads in a Small Outline Package (SOP), the method comprising the steps of:
s1, selecting raw materials: the product is a high-precision copper material with a certain thickness;
cleaning before S2: the surface of the copper material is cleaned in an alkaline oil removal mode, so that oil stains, oxidation points and attachments on the surface of the copper material are effectively removed, and the bonding property of the copper material is improved;
s3 press-drying the film: the upper surface and the lower surface of the cleaned copper material are simultaneously covered with a layer of high polymer photosensitive material;
s4 exposure: carrying out polymerization reaction on the photosensitive substance in the photosensitive dry film by using an exposure machine so as to transfer the designed pattern to the photosensitive dry film;
s5 developing: stripping the unexposed dry film by using a developing solution to realize the complete display of the lead frame image;
s6 etching: the etching solution is sprayed on the surface of the copper material in a spraying mode, and the etching solution and the copper are utilized to carry out chemical reaction to etch the copper surface which is not protected by the photosensitive dry film, so that the gasket below the radiating fin in the lead frame is etched, namely, the raised part of the lead frame is removed by etching, so that the SOP lead frame can be converted into a QFN lead frame arrangement mode, and the number of single units on a single frame is increased;
s7 demoulding: spraying NaOH or KOH solution on a dry film through a film removing machine, and removing the dry film by utilizing the chemical reaction of the solution and the dry film to finish the manufacturing of the circuit;
s8 electroplating: the surface to be electroplated of the product is accurately aligned with the silica gel mask, so that the product and the conductive position form a cathode and an anode, metal ion deposition is completed, and the weldability is improved;
s9 taping: the back of the product is pasted with a layer of high-temperature resistant adhesive tape, so that a closed area is formed on the back of the product, protection is formed during injection molding, the effect of no material overflow during injection molding is achieved, and the hardness is increased in the routing process, so that bonding of bonding wires is facilitated;
s10 is completed, and a lead frame is obtained.
Preferably, in the step S1, the thickness of the copper material is one of 0.1mm, 0.127mm, 0.152mm and 0.203 mm.
Preferably, in step S2, the cleaning is performed by using a roll-type cleaning device, and the cleaning speed can reach 4 m/min.
Preferably, the step S3 is performed in a dustless, constant temperature, constant humidity, yellow light environment.
Preferably, in step S4, the exposure machine is an LDI (LASER DIRECT IMAGING laser direct imaging) direct writing exposure machine, in which the photosensitive material is attached to the copper material to form a protective layer.
Preferably, in step S5, a full-automatic roll-to-roll/plate double-sided development line is adopted, so that two process options of roll-to-plate type can be realized, the development speed reaches 5 m/min, and clean production is realized.
Preferably, in step S6, a double-sided etching process is used to etch the excess copper material outside the functional region of the lead frame with the etching solution. The frame arrangement after etching can be arranged in a QFN form; the etching adopts an eight-bin vacuum etching machine, and the etching machine is equipment integrating vacuum etching and demolding sand blasting.
Preferably, in step S9, a QFN taping machine is used to tape, so that actions such as automatic feeding and replenishment, roller film sticking, manipulator feeding and discharging can be realized.
Preferably, the etching solution is a mixed solution of hydrochloric acid and sodium chlorate.
Preferably, the high temperature resistant adhesive tape is made of polyimide.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, so that any modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention will still fall within the scope of the technical solution of the present invention, unless the content of the technical solution of the present invention is departed from.
Claims (10)
1. A method of forming a lead frame with etched pads in a Small Outline Package (SOP), the method comprising the steps of:
s1 selecting a raw material;
cleaning before S2;
s3 press-drying the film:
s4 exposure:
s5 developing:
s6 etching: spraying an etching solution on the surface of a copper material in a spraying mode, and etching the copper surface which is not protected by a photosensitive dry film by utilizing the chemical reaction of the etching solution and copper so as to etch away a gasket below a radiating fin in a lead frame, namely removing a convex part of the lead frame by etching, so that the SOP lead frame can be changed into an arrangement mode of a QFN lead frame, and the number of single units on a single frame is increased;
s7 demoulding:
s8 electroplating:
s9 taping;
and S10, finishing the manufacturing, and obtaining the lead frame.
2. The method of claim 1, wherein: in the step S6, a double-sided etching process is adopted, the etching solution is used to corrode excess copper outside the functional region of the lead frame, and the frame arrangement after etching can be arranged in a QFN manner.
3. The method of claim 2, wherein: in the step S1, the raw material is a high-precision copper material having a certain thickness.
4. The method of claim 3, wherein: the front cleaning adopts an alkaline oil removal mode to clean the surface of the copper material, so that oil stains, oxidation points and attachments on the surface of the copper material are effectively removed, and the bonding property of the copper material is improved.
5. The method of claim 4, wherein: the dry film pressing method comprises the step of covering a layer of high polymer photosensitive material on the upper surface and the lower surface of a cleaned copper material at the same time.
6. The method of claim 5, wherein: the step S4 includes polymerizing the photosensitive substance in the photosensitive dry film using an exposure machine. Thereby transferring the designed pattern to the photosensitive dry film.
7. The method of claim 6, wherein: the step S5 includes stripping the unexposed dry film with a developer to complete the display of the lead frame image.
8. The method of claim 7, wherein: and the step S7 includes spraying NaOH or KOH solution on a dry film through the film removing machine, and removing the dry film by utilizing the chemical reaction of the solution and the dry film to complete the circuit manufacturing.
9. The method of claim 8, wherein: and step S8, precisely aligning the surface to be electroplated of the product with the silica gel mask to form a cathode and an anode with the conductive position, thereby completing the deposition of metal ions and improving the weldability.
10. The method of claim 9, wherein: and step S9, a layer of high temperature resistant adhesive tape is pasted on the back of the product, so that the back of the product forms a closed area, protection is formed during injection molding, the effect of no material overflow during injection molding is achieved, and hardness is increased during routing, so that bonding of a welding wire is facilitated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210454561.3A CN114899108A (en) | 2022-04-27 | 2022-04-27 | Manufacturing method of lead frame for etching gasket in small-shape package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210454561.3A CN114899108A (en) | 2022-04-27 | 2022-04-27 | Manufacturing method of lead frame for etching gasket in small-shape package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114899108A true CN114899108A (en) | 2022-08-12 |
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ID=82718612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210454561.3A Pending CN114899108A (en) | 2022-04-27 | 2022-04-27 | Manufacturing method of lead frame for etching gasket in small-shape package |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114899108A (en) |
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2022
- 2022-04-27 CN CN202210454561.3A patent/CN114899108A/en active Pending
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