CN1241259C - Manufacturing method for circuit device - Google Patents

Manufacturing method for circuit device Download PDF

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Publication number
CN1241259C
CN1241259C CNB011393106A CN01139310A CN1241259C CN 1241259 C CN1241259 C CN 1241259C CN B011393106 A CNB011393106 A CN B011393106A CN 01139310 A CN01139310 A CN 01139310A CN 1241259 C CN1241259 C CN 1241259C
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China
Prior art keywords
manufacture method
conductive foil
conductive pattern
splitter box
circuit arrangement
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Expired - Fee Related
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CNB011393106A
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Chinese (zh)
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CN1377219A (en
Inventor
坂本则明
小林义幸
阪本纯次
冈田幸夫
五十岚优助
前原荣寿
高桥幸嗣
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication of CN1377219A publication Critical patent/CN1377219A/en
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Publication of CN1241259C publication Critical patent/CN1241259C/en
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    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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Abstract

The object of the invention is to solve the problem that the thicknesses of supporting substrates become a fault of reducing in size and thickness of a circuit unit in the circuit unit in which circuit elements are mounted as the supporting substrates such as a ceramic substrate, a flexible sheet and the like. A method for manufacturing the circuit unit comprises the steps of forming a conductive pattern 51 of each block by using isolation grooves 61 on a conductive foil 60, and then roughing the surfaces of the grooves 61 by chemical polishing. Thus, coupling of the pattern 51 to an insulating resin 50 is strong. A dicing step of each block is introduced. Hence, the method for manufacturing the circuit unit suitable for a mass production can be realized by executing a resource conservation.

Description

The manufacture method of circuit arrangement
Technical field
The present invention relates to the manufacture method of circuit arrangement, particularly do not want the manufacture method of the slim circuit arrangement of support substrate.
Background technology
Be assemblied in the circuit arrangement of electronic instrument in the past,, seeking its miniaturization, slimming and lightweight for being used for portable phone and portable computer etc.
For example, if be that example is narrated as circuit arrangement,, the encapsulation type semiconductor device that utilizes conventional conversion die sealing was arranged in the past as general semiconductor device with semiconductor device.As shown in figure 11, this semiconductor device is installed on the printed circuit board (PCB) PS.
Also have, this encapsulation type semiconductor device, utilize resin bed 3 cover semiconductor chips 2 around, draw the outside lead terminal 4 that connects usefulness from the side of resin bed 3.
Yet, encapsulation type semiconductor device 1, because lead terminal 4 is outwards drawn from resin bed 3, overall dimensions is big, so can not satisfy miniaturization, slimming and light-weighted requirement.
Therefore, each company tries to be the first and realizes miniaturization, slimming and lightweight, develops various structures, develops the CSP of the wafer-scale equal with chip size that is called CSP (encapsulation of chip size) recently, or the CSP bigger than chip size.
Figure 12 represents the CSP6 bigger than chip size, and it adopts glass epoxy resin substrate 5 as support substrate.Illustrate at glass epoxy resin substrate 5 assembling transistor chip T herein.
On glass epoxy resin substrate 5 surfaces, form the 1st electrode the 7, the 2nd electrode 8 and tube core pad 9, form the 1st backplate 10 and the 2nd backplate 11 overleaf.Pass described the 1st electrode 7 of through hole TH and the 1st backplate 10 electrical connection the 8th electrode and the 2nd backplates then.At tube core pad 9 fixing described exposed transistor chip T, utilize metal fine 12 to connect emitter electrode and the 1st electrode 7, utilize metal fine 12 to connect transistor base electrode and the 2nd electrode 8.And, resin bed 13 is set on glass epoxy resin substrate 5 for covering transistor chip T.
Described CSP6 adopts glass epoxy resin substrate 5, and is different with the CSP of wafer-scale, and the backplate 10 and 11 the extended structure that connect usefulness from chip T to the outside are simple, have the cheap advantage of making.
As shown in figure 11, described CSP6 is assemblied on the printed circuit board (PCB) PS.On printed circuit board (PCB) PS, the electrode and the wiring of forming circuit are set, be electrically connected and fixing described CSP6, encapsulation type semiconductor device 1, chip-resistance CR or chip capacity CC etc.
And the circuit that constitutes on printed circuit board (PCB) is installed in the various assemblies.
The manufacture method of CSP then is described with reference to Figure 13 and Figure 14.
At first, preparation utilizes insulating adhesive crimping Cu paper tinsel 20 and 21 (with reference to Figure 13 A) as the glass epoxy resin substrate 5 of basis material (support substrate) on its two sides.
Then,, apply corrosion resistance resist 22 on the Cu paper tinsel 20 and 21 of tube core pad 9, the 1 backplates 10 and the 2nd backplate 11, make Cu paper tinsel 20 and 21 form figure at corresponding the 1st electrode 7, the 2 electrodes 8.The figure that forms at surface and the back side is well (with reference to Figure 13 B) all.
Then, utilize perforator glass change on the epoxy resins substrate form through hole TH the hole, electroplate this hole, form through hole TH.Utilize through hole TH to be electrically connected the 1st electrode 7 and the 1st backplate 10, the 2 electrodes 8 and the 2nd backplate 11.(with reference to Figure 13)
Also have, omitted drawing, plate Au simultaneously, plate Au, transistor chip T is carried out the tube core welding at the tube core pad 9 that becomes the tube core welding ends at the 1st electrode 7 that becomes welding ends and the 2nd electrode 8.
At last, utilize emitter and the 1st electrode of metal fine 12 connection transistor chip T, the base stage of transistor chip T and the 2nd electrode 8, the coated with resins layer 13 then.(above) with reference to Figure 13 D
Utilize described manufacture method, make the CSP type electric component that adopts support substrate 5.Even adopt limber board as support substrate 5, this manufacture method is suitable for too.
On the one hand, represent to adopt the ceramic substrate manufacture method with flow process shown in Figure 14.Behind the ceramic substrate of preparation as support substrate, form through hole, utilize the electrode at the conductive paste print surface and the back side later on, carry out sintering then.After, till the coated with resins layer of aforementioned manufacture method, identical with manufacture method shown in Figure 13, but ceramic substrate is highly brittle, different with flexible substrate with the glass epoxy resin substrate, cause breach because damage easily, can not utilize metal pattern to carry out molded problem so exist.For this reason, cast potting resin, smooth grinding is carried out to sealing resin in the sclerosis back, utilizes cutter sweep individually to separate at last.
As shown in figure 12, transistor chip T, connector 7~12 and resin bed 13 and outside being connected; aspect transistorized protection, be necessary inscape, but only use such inscape; then be difficult to provide miniaturization, slimming and light-weighted circuit element.
Also have, become the glass epoxy resin substrate 5 of support substrate, as mentioned above, do not need originally.But aspect manufacture method,, can there be glass epoxy resin substrate 5 for bonding electrodes will adopt support substrate.
Therefore, owing to adopt glass epoxy resin substrate 5, cost rises, and because glass epoxy resin substrate 5 is thick, and then the circuit element thickening makes miniaturization, slimming and lightweight are restricted.
Also have, for glass epoxy resin substrate and ceramic substrate, the through hole that connects double-sided electrode forms operation and necessarily can not lack, and has the elongated problem of manufacturing process.
Summary of the invention
The present invention develops in view of above-mentioned many problems, and purpose provides miniaturization, and slimming and light-weighted circuit element cost is risen, and manufacturing process are not elongated.
According to the present invention, a kind of manufacture method of circuit arrangement is provided, it is characterized in that having following operation: the operation that forms conductive pattern, the preparation conductive foil, described conductive foil except the conductive pattern zone of the lift-launch part that forms a plurality of circuit elements at least forms the splitter box more shallow than conductive foil thickness; The described splitter box of chemical grinding surface makes the operation of its rough surface faceization; Described operation of respectively carrying part permanent circuit element at desirable described conductive pattern; Cover the described circuit element that each carries part in batches, fill described splitter box, utilize the co-molded operation of insulating properties epoxy resin; Remove the operation of the described conductive foil that described splitter box thickness portion is not set; The operation of described insulating properties epoxy resin being separated by doing to cut apart in each lift-launch part.
Wherein, after described circuit element is fixing, the operation that the described connector that respectively carries circuit element electrode partly and desirable described conductive pattern forms will be electrically connected.
Wherein, described conductive foil is by copper, aluminium, any formation in iron-nickel.
Wherein, cover the surface of described conductive foil at least in part with conducting film.
Wherein, described conducting film is by nickel, golden or silver-plated formation.
Wherein, utilize the corrosion of chemistry or physics to be formed on the described splitter box that selectively forms on the described conductive foil.
Wherein, utilizing with the organic acid is that the treatment fluid of main component carries out described chemical grinding.
Wherein, utilizing with sulfuric acid and hydrogen peroxide is that the treatment fluid of main component carries out described chemical grinding.
Wherein, described circuit element is being fixed any or two kinds of chips in semiconductor exposed die and the circuit component chip.
Wherein, utilize wire bonds to form described connector.
Wherein, by changing molded bonding described insulating resin.
Wherein, the effect that described insulating resin is used and described splitter box surface combination is maintained fixed.
Wherein, arrange a plurality of assemblies at described conductive foil, this assembly is with matrix type configuration formation at least a plurality of circuit elements equipped section conductive pattern.
Wherein, utilize modulus of conversion bonding described insulating resin on each assembly.
Wherein, utilizing on molded described each assembly of described insulating resin, become each equipped section by cutting and separating.
Wherein, identification and the registration mark that forms together of described conductive pattern and cut as benchmark with described registration mark.
Wherein, the mark of the relative coincidence that forms together with described conductive pattern of identification and cut apart as benchmark with described registration mark.
The present invention also provides a kind of manufacture method of circuit arrangement, it is characterized in that having following operation: preparation is at the described conductive foil except the conductive pattern zone of the lift-launch part that forms a plurality of circuit elements at least, the splitter box that formation is more shallow than conductive foil thickness, and formed the operation of the described conductive foil of conductive pattern by described splitter box; The described splitter box of chemical grinding surface makes the operation of its rough surface faceization; Described operation of respectively carrying part permanent circuit element at desirable described conductive pattern; Cover the described circuit element that each carries part in batches, fill described splitter box, utilize the co-molded operation of insulating properties epoxy resin; Remove the operation of the described conductive foil that described splitter box thickness portion is not set; The operation of described insulating properties epoxy resin being separated by doing to cut apart in each lift-launch part.
The present invention also provides a kind of manufacture method of circuit arrangement, it is characterized in that having following operation: preparation is at the described conductive foil except the conductive pattern zone of the lift-launch part that forms a plurality of circuit elements at least, forms than the shallow splitter box of conductive foil thickness and by described splitter box to have formed conductive pattern and made the operation of its rough surface faceization by the described splitter box of chemical grinding surface; Described operation of respectively carrying part permanent circuit element at desirable described conductive pattern; Cover the described circuit element that each carries part in batches, fill described splitter box, utilize the co-molded operation of insulating properties epoxy resin; Remove the operation of the described conductive foil that described splitter box thickness portion is not set; The operation of described insulating properties epoxy resin being separated by doing to cut apart in each lift-launch part.
In the present invention, the conductive foil that forms conductive pattern is a parent material, and conductive foil has support property till the mold insulation resin, and the insulating resin after molded has support property, shouldn't support substrate, so can solve former problem.
Also have, because chemical grinding splitter box surface makes its surface roughening, make insulative resin have fixed effect in the present invention, can handle each assembly, produce a plurality of circuit arrangements in a large number, thus former problem can be solved,
Description of drawings
Fig. 1 is the figure of explanation flow process of the present invention.
Fig. 2 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 3 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 4 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 5 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 6 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 7 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 8 is the figure of explanation circuit arrangement manufacture method of the present invention.
Fig. 9 is the figure of explanation circuit arrangement manufacture method of the present invention.
Figure 10 is the figure of explanation circuit arrangement manufacture method of the present invention.
Figure 11 is the figure of circuit arrangement encapsulating structure before the explanation.
Figure 12 is the figure of circuit arrangement before the explanation.
Figure 13 is the figure of circuit arrangement manufacture method before the explanation.
Figure 14 is the figure of circuit arrangement manufacture method before the explanation.
Embodiment
At first circuit manufacture method of the present invention is described with reference to Fig. 1.
The present invention has following operation: form the operation of conductive pattern, and the preparation conductive foil, the described conductive foil except the conductive pattern zone of the lift-launch part that forms a plurality of circuit elements at least forms the splitter box more shallow than conductive foil thickness; The described splitter box of chemical grinding surface makes the operation of its surface roughening; The operation of respectively carrying part permanent circuit element at desirable described conductive pattern; Form the operation of connector, be used for being electrically connected the circuit element electrode and the desirable described conductive pattern of described each lift-launch part; In order to cover each described circuit element that carries part in batches and to fill described splitter box, utilize the co-molded operation of insulative resin; Remove the operation of the described conducting film that does not have described splitter box thickness portion; By cut apart the operation that described insulating properties epoxy resin separates in each equipped section.
Flow process shown in Figure 1 is different with described operation, utilizes the Cu paper tinsel, and plating Ag and 3 flow processs of incomplete corrosion form conductive patterns.In the chemical grinding flow process, the surface of chemical grinding splitter box.In tube core welding and two flow processs of wire bonds, to each equipped section permanent circuit element, connecting circuit element electrode and conductive pattern.In the molded flow process of conversion, utilize insulative resin co-molded.In the flow process of removing back side Cu paper tinsel, corrosion does not have the conductive foil of the thickness portion of splitter box.The flow process of Chu Liing overleaf, the electrode of the conductive pattern that exposes is overleaf handled.Carry out non-defective unit and differentiate and the characteristic grade separation measuring the circuit element of flow process each equipped section of packing into.In the flow process of dicing die, separate each circuit element from insulating resin cutting.
Below with reference to Fig. 1~Figure 10 each operation of the present invention is described.
As Fig. 2~shown in Figure 4, the 1st operation of the present invention, preparation conductive foil 60 at the conductive foil 60 except the zone of the conductive pattern 51 of the equipped section that forms a plurality of circuit elements 52, forms the splitter box 61 more shallow than conductive foil 60 thickness, formation conductive pattern 51 at least.
Shown in Fig. 2 A, this operation is used for preparing sheet conductive foil 60.About conductive foil 60, select its material will consider adhesiveness, weldability and the plating of scolder, adopt the conductive foil of Cu as material as main material, the conductive foil of Al as main material, or the conductive foil that constitutes by alloys such as Fe-Ni.
If consider the back corrosion, the thickness of conductive foil is preferably selected 10 μ m~300 μ m, adopts the Copper Foil of 70 μ m (2 ounces) here.But, even below the above 10 μ m of 300 μ m, also be good substantially.Such as described later, be preferably formed as village's splitter box 61 more shallow than conductive foil 60 thickness.
Prepare the conductive foil 60 of sheet, the width of regulation for example is 45mm, is rolled into web-like, can be sent to each operation described later to it then, and the conductive foil 60 that also size according to the rules can be cut into palisade is delivered to each operation described later.
Specifically, shown in Fig. 2 B, line up 4~5 isolator at the assembly 62 that short palisade conductive foil 60 forms a plurality of equipped sections.Between each assembly 62, slit 63 is set, the stress of the conductive foil 60 that produces when being used for absorbing heat treatments such as little molding process.Also have, according to certain intervals index hole 64 is set, be used for determining the position of conductive foil in each operation at the upper and lower side of conductive foil 60.
Then, form conductive pattern.
At first, as shown in Figure 3, on Cu paper tinsel 60, form photoresist (corrosion-resistant) PR, make photoresist PR form figure, so that the conductive foil 60 except conductive pattern 51 zones exposes.Shown in Fig. 4 A, utilize photoresist PR selectively to corrode conductive foil 60 then.
The degree of depth of the splitter box 61 that is formed by etching for example is 50 μ m, and its side is because become asperities, so improved the cementability with insulating resin 50.
Though the sidewall of splitter box 61 illustrates with straight line pattern ground, the method difference of removing has different structures.This removes operation can adopt wet corrosion, dry corrosion, laser evaporation and cutting method.In the wet corrosion situation, mainly adopt chlorination two iron or chlorination two bronze medals to corrode, described conductive foil is immersed in the corrosive liquid, spray with this corrosive liquid.The corrosive liquid here generally carries out non-each corrosion to the non-opposite sex, so side etch is become warp architecture.
In the dry corrosion situation, may carry out anisotropy, non-anisotropic corrosion.Allegedly utilize the reactive ion corrosion can not remove Cu now, but can remove Cu with sputter.Also have, can carry out anisotropy according to the condition of sputter, non-anisotropic corrosion.
Also have, form splitter box 61 with laser direct irradiation laser, the side of that splitter box 61 that this moment is said forms and faces directly.
Also can optionally cover at Fig. 3 corrosion resistant certain conducting film of corrosive liquid (not diagram) is replaced photoresist.If selectively cover circuit part, this conducting film becomes the corrosion protection film, can corrode splitter box without resist.The material that is considered as this conducting film has Ag, Ni, and Au, Pt, or Pd etc.And the feature of these corrosion proof conducting films is to be used as pipe core welding disc and solder joint as it is.
For example, the Ag film is connected with Au, also is connected with scolder.If therefore cover golden film at chip back, hot pressing chip on the Ag of circuit 51 film just can utilize scolder fixed chips such as scolding tin same as before.Because the Au fine rule is connecting the Ag conducting film, so may use wire bonds.Therefore have such advantage, can make these conducting films as it is as pipe core welding disc and solder joint.
Fig. 4 B represents concrete conductive pattern 51.The figure shows in the assembly 62 shown in Fig. 2 B one extended figure.One of the blacking part is a lift-launch part 65, constitutes 51, one assemblies 62 of conductive pattern and arranges a plurality of lift-launch parts 65 with the matrix shape of 5 row, 10 row, carries on part 65 at each same conductive pattern 51 is set.The periphery of each assembly is arranged to the figure 66 of block form, leaves some also its inboard marks 67 of locating to be provided with control site when cutting with it.Frame shape figure 66 as and molded metal film chimeric, after the corrosion of conductive foil 60 back sides, have the effect that insulating resin 50 is strengthened.
The 2nd operation of the present invention, as shown in Figure 5, chemical grinding splitter box 61 makes its surface roughening.
This operation is after forming splitter box 61, and utilizing with sulfuric acid-hydrogen peroxide is that the treatment fluid of main component is handled, and makes splitter box 61 surface roughenings.Adopt メ Star Network (strain) system CB-801 as treatment fluid, in corrosive liquid, immersed several minutes, form the concavo-convex active surface of 1~2 μ m on the surface.Therefore increase the area of splitter box 61 walls.In follow-up operation, can strengthen the bond strength with mold insulation resin 50, obtain good fixed effect.
The present invention also has such method, promptly with the corrosion treatment liquid of organic acid system, and the wall of chemical grinding alligatoring splitter box 61.Adopt the corrosion treatment liquid of メ Star Network (strain) system CZ-8100, in corrosive liquid, immersed several minutes, form the convex-concave surface of 1~2 μ m on the surface as organic acid system.Therefore, obtain better fixed effect than described sulfuric acid-hydrogen peroxide corrosive liquid.But, must selection do not damage the treatment fluid on conductive pattern 51 surfaces.
Also have, except described method, also can the using plasma caustic solution after melanism is handled.
The 3rd operation of the present invention, as shown in Figure 6, permanent circuit element 52 on each equipped section 65 of desirable conductive pattern 51 forms the electrode of the circuit element 52 that is electrically connected each equipped section 65 and the connecting elements of desirable conductive pattern 51.
As circuit element 52 transistor is arranged, semiconductor elements such as diode, IC chip, passive components such as electric capacity chip and resistance chip.Though the thickness thickening still also can be installed CSP, ventricumbent semiconductor element such as BGA.
Here exposed transistor chip 52A is connected on the conductive pattern 51A, utilizes fixedly the metal fine 52A connection emitter electrode and the conductive pattern 51B of usefulness such as hot pressing ball-shaped welded or the welding of ultrasonic wave wedge shape, base electrode and conductive pattern 51B.52B is electric capacity chip or passive component, and is fixing with scolder such as scolding tin or conductive paste 55.
This operation is because at each assembly 62 integrated a plurality of conductive pattern 51, so have the advantage of extreme efficiency ground permanent circuit element 52 and welding lead.
The 4th operation of the present invention, as shown in Figure 7, with insulative resin 50, so that the circuit element 52 of each equipped section 63 of covering is in batch filled splitter box 61 common moulds.
This operation as shown in Figure 7, insulating resin 50 covers circuit element 52A fully, 52B and a plurality of conductive pattern 51A, 51B, 51C, the splitter box 61 between conductive pattern 51 is filled insulating resin 50, obtain and conductive pattern 51A 51B, the firm fixed effect of the matsurface combination of 51C side.Can support conductive pattern 51 so utilize insulating resin 50.
This operation can realize this operation by molded, injection molding of conversion or dipping.As resin material, the thermosetting resin of epoxy resin etc. can be with changing molded realization, and thermoplastic resins such as polyimide resin, poly-p-phenylene sulfide can be realized with injecting mould.
Also have, this operation is being changed molded or during injection molding, shown in Fig. 7 B, each assembly 62 is put into the equipped section 63 of the metal pattern of a shared molded usefulness, and it is common molded to utilize 1 insulating resin 50 to carry out at each assembly.Therefore, with changed in the past situation such as molded respectively the method for molded each equipped section compare, reduce amount of resin significantly.
Adjustment covers insulating resin 50 thickness on conductive foil 60 surfaces, so that from the about 100 μ m in top of the metal fine 55A of circuit element 52.As consider intensity, this thickness may be thick, also may approach.
The feature of this operation is that till covering insulating resin 50, the conduction thin 60 that forms conductive pattern 51 becomes support substrate.In the past, resemble and utilize Figure 13 the support substrate 5 that there is no need to form circuit 7~11, the conduction thin 60 that becomes support substrate in the present invention is the necessary materials as electrode material.For this reason, has the advantage made from economic constituent material.Also realize reducing cost.
Splitter box 61 is because the thickness that forms is more shallow than the thickness of conductive foil, so as conductive pattern 51 each self-separation conductive foil 60 not.Therefore, when carrying out disposed of in its entirety mold insulation resin 50, have to the very easy feature of the making of carrying of changing metal pattern and installation as sheet conductive foil 60.
The 5th operation of the present invention as shown in Figure 7, is removed the conductive foil 60 that splitter box 61 thickness portions are not set.
Conductive pattern 51 is separated at the back side that this operation is removed conductive foil 60 with chemistry and/or physical method.Utilize and grind, grinding, the evaporation of metal of corrosion and laser etc. carries out this operation.
Utilize in test lapping device or grinding attachment the whole face 30 μ m that prune, expose insulating resin 50 from splitter box 61.In Fig. 7, dot and expose face.The result is separated into the thick conductive pattern 51 of about 40 μ m.Also can be before exposing insulating resin 50 whole ground wet corrosion conductive foil 60, after, utilize lapping device or the grinding attachment whole insulating resin 50 of showing out of pruning.Also have, also can arrive dotted line till whole ground wet corrosion conductive foil 60 up to the position of dotted line, insulating resin 50 is exposed.
As a result, become the structure that makes conductive pattern 51 back sides expose insulating resin 50.Just, be filled in insulating resin 50 surfaces of splitter box 61 and the surface of conductive pattern 51, become consistent in fact structure.Therefore, the feature of circuit arrangement 5 of the present invention is because electrode 10 and 12 such sections are poor before not being provided with as shown in figure 12, during installation because oneself adjustment can be in situ flatly moved in capillary effects such as scolding tin.
Then, conductive pattern 51 is carried out the back side handle, obtain final structure as shown in Figure 8.Just, on the conductive pattern 51 that exposes, apply electric conducting materials such as scolding tin as requested, make circuit arrangement.
The 6th operation of the present invention as shown in Figure 9, is tested the characteristic with the circuit element 52 of molded in batches each equipped section 63 of insulating resin 50.
Behind aforementioned operation corrosion conductive foil 60 back sides, cut off each assembly 62 from conductive foil 60.This assembly 62 is because use the remaining portion of insulating resin 50 connection conductive foils 60, so can cut off the remaining portion of mechanically peeling off conductive foil 60 of metal film.
The back side of conductive pattern 51 as shown in Figure 9, is exposed in the back side of each assembly 62, and each equipped section 65 is arranged in identical matrix shape when forming conductive pattern 51.Handle component 68 is touched on the backplate 56 that the insulating resin 50 from conductive pattern 51 exposes, measure the characterisitic parameter of the circuit element 52 of each equipped section 65 respectively, judge whether non-defective unit, if defective products then marks with magnetic ink etc.
In this operation, the circuit arrangement 53 of each equipped section 65 is because with insulating resin 50 supporting assembly 62 integrally, so do not have singlely to separate dispersedly.Therefore, the assembly of placing on the tester mounting table 62 moves the circuit arrangement 53 of each equipped section 65 of very fast big quantitative determination assembly 62 according to the longitudinal direction and the transverse direction of arrow indication according to a determining deviation according to the size branch of equipped section 65.Just, for the differentiation that must carry out in the past the circuit arrangement surface and the back side, the identification of electrode position etc. can no longer be carried out, and has then shortened the time of measuring widely.
As shown in figure 10, the 7th operation of the present invention is by separating at each equipped section 65 cutting insulating resin 50.
In this operation, vacuum suction assembly 62 on the mounting table of cutter sweep utilizes the insulating resin 50 of cutting blade 69 along the line of cut 70 cutting and separating ditches 61 between each equipped section 65, is separated into each circuit arrangement 53.
In this operation, utilize cutting blade 69 to cut deeply, roughly cut off insulating resin 50, take out assembly 62 backs from cutter sweep and form chocolate tablet with roller.During cutting and the relative position of each assembly peripheral frame shape conductive pattern 66 integral body of being provided with of described the 1st operation involutory, find mark 67 and and its aim at, cut then.Though well-known, after cutting is wanted all to cut along the line of cut 70 of longitudinal direction, return to turn 90 degrees and cut putting microscope carrier again by transverse direction line of cut 70.
The effect of invention
The present invention has the function of the conductive foil body that constitutes conductive pattern material as support substrate, when forming splitter box or circuit element, covering insulating resin are installed, support whole by conductive foil, and when the separation conductive foil forms each conductive pattern, have the function of insulating resin as support substrate.Therefore, can be at circuit element, the necessary lower limit of conductive foil and insulating resin is made.For example, constitute original circuit arrangement and can not want support substrate, can reduce the cost like this in order to the precedent explanation.And imbed in the insulating resin 50 by support substrate not, conductive pattern but also may adjust the thickness of insulating resin and conductive foil, have the advantage that can form extremely thin circuit arrangement.
In the present invention, even splitter box is more shallow than being approximately 50 μ m, by make its surface roughening with chemical grinding, insulating resin and each conducting film though be extremely thin circuit arrangement, are used the circuit element good seal of insulating resin in conjunction with reinforcement.
Secondly, the present invention is in the molding process of insulating resin, because co-molded each assembly, so reduce amount of resin in a large number.
Also have, at cutting action, because the mark that utilizes the position to cooperate, so have the advantage of very fast affirmation line of cut.And can only cut off insulating resin layer during cutting and not cut off conductive foil, therefore can prolong the life-span of cutting blade, the metallic bur power that the situation that also not occurring in needs the cut-out conductive foil produces.
As shown in Figure 13, form operations (situation of ceramic substrate) such as operation, conductor printing, existing manufacturing process is shortened greatly, make the advantage of whole operations in having because omitted through hole.Also having, owing to do not want the framework metal pattern fully, is the manufacture method of extremely short delivery period.

Claims (16)

1. the manufacture method of a circuit arrangement is characterized in that having following operation:
Form the operation of conductive pattern, the preparation conductive foil, the described conductive foil except the conductive pattern zone of the lift-launch part that forms a plurality of circuit elements at least forms the splitter box more shallow than conductive foil thickness;
The described splitter box of chemical grinding surface makes the operation of its rough surface faceization;
Described operation of respectively carrying part permanent circuit element at desirable described conductive pattern;
Cover the described circuit element that each carries part in batches, fill described splitter box, utilize the co-molded operation of insulative resin;
Remove the operation of the described conductive foil that described splitter box thickness portion is not set;
The operation of described insulative resin being separated by doing to cut apart in each lift-launch part.
2. according to the manufacture method of the described circuit arrangement of claim 1, it is characterized in that having:
After described circuit element is fixing, the operation that the described connector that respectively carries circuit element electrode partly and desirable described conductive pattern forms will be electrically connected.
3. according to the manufacture method of claim 1 or 2 described circuit arrangements, it is characterized in that,
Described conductive foil is by copper, aluminium, any formation in iron-nickel.
4. according to the manufacture method of claim 1 or 2 described circuit arrangements, it is characterized in that,
Cover the surface of described conductive foil at least in part with conducting film.
5. according to the manufacture method of the described circuit arrangement of claim 4, it is characterized in that,
Described conducting film is by nickel, golden or silver-plated formation.
6. according to the manufacture method of claim 1 or 2 described circuit arrangements, it is characterized in that,
Utilize the corrosion of chemistry or physics to be formed on the described splitter box that selectively forms on the described conductive foil.
7. according to the manufacture method of claim 1 or 2 described circuit arrangements, it is characterized in that,
Utilization is that the treatment fluid of main component carries out described chemical grinding with the organic acid.
8. according to the manufacture method of claim 1 or 2 described circuit arrangements, it is characterized in that,
Utilization is that the treatment fluid of main component carries out described chemical grinding with sulfuric acid and hydrogen peroxide.
9. according to the manufacture method of claim 1 or 2 described circuit arrangements, it is characterized in that,
Described circuit element is being fixed any or two kinds of chips in semiconductor exposed die and the circuit component chip.
10. according to the manufacture method of the described circuit arrangement of claim 2, it is characterized in that,
Utilize wire bonds to form described connector.
11. the manufacture method according to claim 1 or 2 described circuit arrangements is characterized in that,
By changing molded bonding described insulating resin.
12. the manufacture method according to the described circuit arrangement of claim 11 is characterized in that,
The effect that described insulating resin is used and described splitter box surface combination is maintained fixed.
13. the manufacture method according to claim 1 or 2 described circuit arrangements is characterized in that,
Arrange a plurality of assemblies at described conductive foil, this assembly is with matrix type configuration formation at least a plurality of circuit elements equipped section conductive pattern.
14. the manufacture method according to the described circuit arrangement of claim 13 is characterized in that,
Utilize modulus of conversion bonding described insulating resin on each assembly.
15. the manufacture method according to the described circuit arrangement of claim 13 is characterized in that,
Utilizing on molded described each assembly of described insulating resin, become each equipped section by cutting and separating.
16. the manufacture method according to the described circuit arrangement of claim 15 is characterized in that,
Identification and the position registration mark that forms together of described conductive pattern also cut as benchmark with described position registration mark.
CNB011393106A 2001-03-22 2001-10-30 Manufacturing method for circuit device Expired - Fee Related CN1241259C (en)

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