CN111433321A - 一种金属离子对复合物包覆的量子点及其制备方法 - Google Patents

一种金属离子对复合物包覆的量子点及其制备方法 Download PDF

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CN111433321A
CN111433321A CN201880078547.XA CN201880078547A CN111433321A CN 111433321 A CN111433321 A CN 111433321A CN 201880078547 A CN201880078547 A CN 201880078547A CN 111433321 A CN111433321 A CN 111433321A
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quantum dots
ion pair
quantum dot
metal ion
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CN111433321B (zh
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李良
李志春
孙桦
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)

Abstract

涉及一种金属离子对复合物包覆的量子点及其制备方法。使用烷基复合物(X‑R)对量子点进行预处理，在量子点表面创造金属离子生长的位点，随后加入相应的金属盐，通过两相法进行金属离子对复合物的生长，反应一段时间后，得到金属离子对复合物包覆的量子点。与现有技术相比，所制备的金属离子对复合物包覆的量子点具有优异的光稳定性以及化学稳定性。

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PCT国内申请，说明书已公开。

Claims (8)

  1. PCT国内申请，权利要求书已公开。
CN201880078547.XA 2018-05-17 2018-05-17 一种金属离子对复合物包覆的量子点及其制备方法 Active CN111433321B (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113959994A (zh) * 2020-07-20 2022-01-21 Tcl科技集团股份有限公司 一种检测量子点中残余金属离子的方法
CN115287057A (zh) * 2022-08-02 2022-11-04 华中科技大学 硫化铅量子点制备方法、近红外太阳能电池、光电探测器

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WO2017077523A1 (en) * 2015-11-08 2017-05-11 King Abdullah University Of Science And Technology Air-stable surface-passivated perovskite quantum dots (qds), methods of making these qds, and methods of using these qds
CN107017325A (zh) * 2015-11-30 2017-08-04 隆达电子股份有限公司 量子点复合材料及其制造方法与应用
CN107978688A (zh) * 2017-12-13 2018-05-01 吉林大学 基于硫化铅包覆钙钛矿量子点的电致发光led及制备方法

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CN103172051B (zh) * 2013-04-16 2015-02-18 苏州大学 一种水溶性碳量子点及其制备方法
CN105838357A (zh) * 2014-12-23 2016-08-10 南京化工职业技术学院 一种锌、银共掺杂硫化镉量子点的制备方法
CN104694129A (zh) * 2015-02-03 2015-06-10 嘉兴学院 一种可检测超低浓度重金属离子的荧光材料及其制备方法

Patent Citations (3)

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WO2017077523A1 (en) * 2015-11-08 2017-05-11 King Abdullah University Of Science And Technology Air-stable surface-passivated perovskite quantum dots (qds), methods of making these qds, and methods of using these qds
CN107017325A (zh) * 2015-11-30 2017-08-04 隆达电子股份有限公司 量子点复合材料及其制造方法与应用
CN107978688A (zh) * 2017-12-13 2018-05-01 吉林大学 基于硫化铅包覆钙钛矿量子点的电致发光led及制备方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JINHEE CHO: "Enhanced air stability of CsPbX3/ZnS heterostructures through selective defect healing and its organic photovoltaics application", 《GRADUATE SCHOOL OF UNIST》 *
PENG JIANG ET AL.: "A room-temperature method for coating a ZnS shell on semiconductor quantum dots", 《J. MATER. CHEM. C》 *
WEIWEI CHEN ET AL.: "Enhanced Stability and Tunable Photoluminescence in Perovskite CsPbX3/ZnS Quantum Dot Heterostructure", 《SMALL》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113959994A (zh) * 2020-07-20 2022-01-21 Tcl科技集团股份有限公司 一种检测量子点中残余金属离子的方法
CN115287057A (zh) * 2022-08-02 2022-11-04 华中科技大学 硫化铅量子点制备方法、近红外太阳能电池、光电探测器

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