CN111399294A - 阵列基板及显示面板 - Google Patents

阵列基板及显示面板 Download PDF

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CN111399294A
CN111399294A CN202010297019.2A CN202010297019A CN111399294A CN 111399294 A CN111399294 A CN 111399294A CN 202010297019 A CN202010297019 A CN 202010297019A CN 111399294 A CN111399294 A CN 111399294A
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array
substrate
display panel
chip
conversion module
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CN111399294B (zh
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高雅楠
于喆
金一坤
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2020/087660 priority patent/WO2021208145A1/zh
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    • H—ELECTRICITY
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13456—Cell terminals located on one side of the display only
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Abstract

本揭示实施例提供一种阵列基板及显示面板，阵列基板包括衬底基板、驱动线路以及第一覆晶薄膜，其中，阵列基板还包括转换模块和阵列走线，驱动线路中的GOA走线单独与转换模块电连接，并通过阵列走线与衬底基板连接，从而改善显示面板在排布阵列走线时，阵列走线出现走线角落区域，以及走线角落区域容易发热的问题，提高显示面板的显示质量及使用寿命。

Description

阵列基板及显示面板
技术领域
本揭示涉及面板显示技术领域，尤其涉及一种阵列基板及显示面板。
背景技术
随着显示技术的发展，液晶显示器(liquid crystal display，LCD)与有机发光二极管(organic light emitting diode，OLED)等平面显示装置因具有高画质、省电及轻薄等优点，而被广泛使用。
现有的显示面板设备中，在内部电路结构设计时，一般将栅极驱动电路和数据电路制作在同一块印刷电路板上，利用基板上的阵列布线(wire on array，WOA)将该印刷电路板与用于传输栅极驱动信号的覆晶薄膜(chip on film，COF)连接。连接时，COF与基板上的一组扇形引线(fanout)相连，并通过扇形引线连接至各条栅线。但是，随着窄边框以及高分辨率显示面板的发展，在进行信号传输时，WOA上的负载较大，电流集中经过线宽较细的WOA处时，WOA的角落处容易发热，而影响显示面板内的充电，影响面板的显示效果及使用寿命。
综上所述，现有的窄边框及高分辨率显示面板中，在进行信号传输时，WOA上负载过大，在引线的边角处容易发热，进而影响显示面板内部薄膜晶体管的充电，并影响显示面板的显示效果及使用寿命。
发明内容
本揭示提供一种阵列基板及显示面板，以解决现有窄边框及高分辨率显示面板中的的阵列基板在排布阵列走线时，阵列走线存在角落区域，以及角落区域容易过载而发热等问题。
为解决上述技术问题，本揭示实施例提供的技术方案如下：
根据本揭示实施例的第一方面，提供了一种阵列基板：
所述阵列基板包括显示区域以及位于所述显示区域外围的非显示区域，其特征在于，包括：
衬底基板；
驱动线路，所述驱动线路设置在所述非显示区域相对的所述衬底基板上；以及
第一覆晶薄膜，所述驱动线路通过所述第一覆晶薄膜与所述衬底基板连接；
其中，所述阵列基板还包括转换模块以及阵列走线，所述转换模块的一端与所述驱动线路电连接，所述转换模块的另一端通过所述阵列走线与所述衬底基板电连接。
根据本揭示一实施例，所述驱动线路包括GOA(gate driver on array)电路，所述GOA电路与所述转换模块电连接并通过所述阵列走线将GOA电路信号传输到所述衬底基板。
根据本揭示一实施例，所述转换模块包括第二覆晶薄膜。
根据本揭示一实施例，所述第二覆晶薄膜与所述第一覆晶薄膜并排间隔设置，且设置在所述覆晶薄膜的至少一侧。
根据本揭示一实施例，所述GOA电路包括如时钟信号电路、电路起始信号电路以及低电位信号电路。
根据本揭示一实施例，多个所述第一覆晶薄膜平行间隔的设置在所述衬底基板的边缘。
根据本揭示一实施例，所述转换模块与所述阵列走线设置在所述非显示区域相对的衬底基板的边缘处，多条所述阵列走线与所述衬底基板的边缘平行。
根据本揭示一实施例，每条所述阵列走线连接所述衬底基板上的一条栅线。
根据本揭示一实施例，所述衬底基板内设置有阵列排布的像素区以及与所述像素区相对应的薄膜晶体管。
根据本揭示的第二方面，还提供一种显示面板，显示面板包括本揭示实施例中提供的阵列基板。所述显示面板内部的阵列走线不存在过载以及发热的角落区域，显示效果以及显示质量好。
综上所述，本揭示实施例的有益效果为：
本揭示实施例提供一种阵列基板及显示面板，通过在衬底基板上设置转换模块，同时将所述转换模块设置在非显示区域相对的衬底基板上，并且将驱动线路中的GOA电路单独与所述转换模块相连，继而再通过阵列走线将所述转换模块与衬底基板相连。通过本揭示实施例中的结构设计，改善衬底基板内部的阵列走线的角落区域，有效的避免了在角落区域的走线容易过载而发热的情况，改善了显示面板的显示质量并提高使用寿命。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中显示面板的结构示意图；
图2为本揭示实施例提供的显示面板结构示意图；
图3为本揭示实施例提供的又一显示面板结构示意图。
具体实施方式
下面将结合本揭示实施例中的附图，对本揭示实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本揭示一部分实施例，而不是全部的实施例。基于本揭示中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本揭示保护的范围。
如图1所示，图1为现有技术中显示面板的结构示意图。显示面板100包括显示区域105和非显示区域106，非显示区域106设置在显示区域105的外围。同时，显示面板100还包括液晶显示基板101以及驱动线路102。显示区域105内对应的液晶显示基板101为显示面板的发光区域。
驱动线路102通过覆晶薄膜103与液晶显示基板101电连接。驱动线路102内包括多条数据驱动信号线，驱动信号线为液晶显示基板101提供数据信号以及控制信号。进一步的，在每一覆晶薄膜103内，均通过阵列走线(wire on array，WOA)104与液晶显示基板101内对应的栅极线连接。由于液晶显示基板101内包含多行栅极线，因此，在连接时，阵列走线104会在液晶显示基板上出现一角落区域107，当为显示面板提供信号时，信号输出在经过所述角落区域107时，会出现较大的负载，而当较大的负载在经过此区域内线宽较细的阵列走线104时，产生较大的热量，进而影响显示面板的正常显示。
为了改善显示面板内的阵列走线的角落区域内发热，并提高显示面板的显示质量以及实现窄边框的设计，本揭示提供一种显示面板。
如图2所示，图2为本揭示实施例提供的显示面板结构示意图。显示面板200包括衬底基板201以及驱动线路202。进一步的，显示面板200包括显示区域207和非显示区域206，非显示区域206围绕所述显示区域207设置，即本揭示实施例中，非显示区域206设置在显示区域207的外围。
进一步的，显示面板200还包括多个第一覆晶薄膜203、多个转换模块204以及多条阵列走线205。第一覆晶薄膜203以及转换模块204设置在非显示区域206内。另外，第一覆晶薄膜203的一端与驱动线路202电连接，第一覆晶薄膜203的另一端与衬底基板201电连接，以实现数据信号的传输。
转换模块204的一端与驱动线路202电连接，转换模块204的另一端通过阵列走线205与衬底基板201连接。
具体的，本揭示实施例中，多个第一覆晶薄膜203可并排间隔设置，且相邻的所述第一覆晶薄膜203之间的间距可相同，以及宽度均可相同。
转换模块204可与第一覆晶薄膜203设置在同一行内，且转换模块204设置在所述第一覆晶薄膜203的至少一侧，本揭示实施例中，在第一覆晶薄膜203的两侧边缘区域均设置转换模块204。转换模块204通过阵列走线205与显示区域207内的薄膜晶体管的栅极线相连接，以实现信号的输入。
在本揭示实施例中，驱动线路202内包括多条数据信号线以及多条控制信号线，具体的，驱动线路202内包含GOA电路。
进一步的，为了改善显示面板200内的阵列走线205的角落区域，在设置时，将驱动线路202内的GOA电路单独分离开，然后将所述GOA电路与本揭示实施例中的转换模块204电连接，转换模块204再通过阵列走线205与衬底基板201连接。
本揭示实施例中，GOA电路可包括时钟信号电路、起始信号电路以及低电位信号电路，上述信号电路线均与转换模块204电连接，在由转换模块204对信号进一步传递。
由于转换模块204设置在显示区域207的边缘区域位置处，因此，转换模块204与阵列走线205连接时，其位置仍靠近显示面板200的边缘，此时，阵列走线205可直接从转换模块204接出，而不会在显示面板200内部出现角落区域，进而减少了阵列走线205的集中。
当数据信号在阵列走线205上传输时，不会因阵列走线205的密集而发热，从而有效的改善了显示面板200内部电路线的布局，提高了显示面板的可靠性。本揭示实施例中，阵列走线205设置在显示区域207的边缘区域，更加有利于实现显示面板窄边框的设计，提高显示面板的综合性能。
进一步的，在设置阵列走线205时，可与衬底基板201的边缘平行，以简化布线工艺，提高生产效率。同时，在显示区域207对应的衬底基板201内，还设置有阵列排布的多个像素区域，以及与所述像素区域相对应的多个薄膜晶体管，阵列走线205分别与每行薄膜晶体管对应的栅极线电连接，以提供驱动信号，实现显示面板的正常发光。
本揭示实施例中，转换模块204可为多个第二覆晶薄膜，在设置时，第二覆晶薄膜与多个第一覆晶薄膜203等间距设置，且第二覆晶薄膜与第一覆晶薄膜203设置在同一行内，并将第二覆晶薄膜设置在所述第一覆晶薄膜203的至少一侧。
优选的，转换模块204还可设置在衬底基板201的两侧，并靠近衬底基板201的两侧边缘区域进行设置。此时，将驱动电路202内的GOA电路分离出，并与所述转换模块204电连接，最后，在将阵列走线205与转换模块204连接，使阵列走线205可在显示面板200内平直排布，避免出现阵列走线205多次弯折而形成角落区域的问题。
优选的，在设置第二覆晶薄膜时，可分别在第一覆晶薄膜203的两侧设置，即设置两个第二覆晶薄膜，以满足显示面板内布线的需求，同时解决阵列走线205多次弯折以及薄膜晶体管充电的问题。
如图3所示，图3为本揭示实施例提供的又一显示面板结构示意图。显示面板的显示区域308内包括阵列设置的多个像素区域，以及多条数据线305和多条栅极扫描线306，数据线305和栅极扫描线306在行或者列上阵列布置。
本揭示实施例中，显示面板还包括多个第一覆晶薄膜301和设置在第一覆晶薄膜301两侧的多个第二覆晶薄膜302，其中，第二覆晶薄膜302与驱动线路中的GOA电路信号线电连接，并通过多个阵列走线303与显示面板内的多条栅极扫描线306一一对应连接。通过设置第二覆晶薄膜302，且第二覆晶薄膜302与GOA电路区域307在垂直方向上对齐，其GOA电路区域307内的多条阵列走线303的宽度可与显示面板的多条数据总线的宽度相同。这样，阵列走线303可直接与GOA电路区域307内的线路进行连接，而避免出现了多次弯折的情况。从而有效的改善了阵列走线303在角落区域处密集而出现发热的问题，并提高了显示面板的可靠性。
进一步的，本揭示实施例还提供一种显示装置，显示装置包括本揭示实施例中的阵列基板以及显示面板，显示装置内的阵列走线排布合理，有利于窄边框的设计，同时显示装置的可靠性强，使用寿命长。
以上对本揭示实施例所提供的一种阵列基板即显示面板进行了详细的介绍，以上实施例的说明只是用于帮助理解本揭示的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，而这些修改或者替换，并不使相应技术方案的本质脱离本揭示各实施例的技术方案的范围。

Claims (10)

1.一种阵列基板，所述阵列基板包括显示区域以及位于所述显示区域外围的非显示区域，其特征在于，包括：
衬底基板；
驱动线路，所述驱动线路设置在所述非显示区域相对的所述衬底基板上；以及
多个第一覆晶薄膜，所述驱动线路通过所述第一覆晶薄膜与所述衬底基板连接；
其中，所述阵列基板还包括多个转换模块以及多条阵列走线，所述转换模块的一端与所述驱动线路电连接，所述转换模块的另一端通过所述阵列走线与所述衬底基板电连接。
2.根据权利要求1所述的阵列基板，其特征在于，所述驱动线路包括GOA电路，所述GOA电路与所述转换模块电连接并通过所述阵列走线将GOA电路信号传输到所述衬底基板。
3.根据权利要求2所述的阵列基板，其特征在于，所述转换模块包括多个第二覆晶薄膜。
4.根据权利要求3所述的阵列基板，其特征在于，所述第二覆晶薄膜与所述第一覆晶薄膜并排间隔设置，且设置在所述覆晶薄膜的至少一侧。
5.根据权利要求2所述的阵列基板，其特征在于，所述GOA电路包括如时钟信号电路、起始信号电路以及低电位信号电路。
6.根据权利要求1所述的阵列基板，其特征在于，所述第一覆晶薄膜平行间隔的设置在所述衬底基板的边缘。
7.根据权利要求1所述的阵列基板，其特征在于，所述转换模块与所述阵列走线设置在所述非显示区域相对的衬底基板的边缘处，所述阵列走线与所述衬底基板的边缘平行。
8.根据权利要求1所述的阵列基板，其特征在于，每条所述阵列走线连接所述衬底基板上的一条栅线。
9.根据权利要求1所述的阵列基板，其特征在于，所述衬底基板内设置有阵列排布的多个像素区以及与所述多个像素区相对应的多个薄膜晶体管。
10.一种显示面板，其特征在于，包括如权利要求1-9中任一项所述的阵列基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112433413A (zh) * 2020-11-26 2021-03-02 深圳市华星光电半导体显示技术有限公司 液晶显示器及其串扰消除方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090102215A (ko) * 2008-03-25 2009-09-30 이성호 내로우 비엠을 갖는 액정표시장치
CN109345961A (zh) * 2018-12-20 2019-02-15 深圳市华星光电半导体显示技术有限公司 一种窄边框显示器
CN209216555U (zh) * 2019-01-29 2019-08-06 合肥京东方显示技术有限公司 一种覆晶薄膜及显示装置
CN110109301A (zh) * 2019-04-23 2019-08-09 深圳市华星光电半导体显示技术有限公司 一种阵列基板、显示装置
CN110320698A (zh) * 2019-07-23 2019-10-11 惠州市华星光电技术有限公司 背光模组及液晶显示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101044920B1 (ko) * 2004-07-28 2011-06-28 엘지디스플레이 주식회사 액정표시장치용 게이트 구동회로 및 이를 이용한액정표시장치
DE102013113919A1 (de) * 2012-12-21 2014-06-26 Lg Display Co., Ltd. Anzeigevorrichtung
KR102169459B1 (ko) * 2013-12-06 2020-10-26 삼성디스플레이 주식회사 표시 장치 및 멀티 패널 표시 장치
CN104360558A (zh) * 2014-12-08 2015-02-18 重庆京东方光电科技有限公司 一种阵列基板、显示面板及显示装置
KR102309493B1 (ko) * 2015-01-21 2021-10-08 삼성디스플레이 주식회사 게이트 구동회로 및 그것을 포함하는 표시 장치
CN104795043B (zh) 2015-05-11 2018-01-16 京东方科技集团股份有限公司 一种阵列基板、液晶显示面板及显示装置
US10564501B2 (en) * 2016-02-10 2020-02-18 Sharp Kabushiki Kaisha Active matrix substrate and display panel
KR102007435B1 (ko) * 2016-08-02 2019-08-06 삼성디스플레이 주식회사 유기발광 표시모듈 및 이를 포함하는 유기발광 표시장치
KR20180030325A (ko) * 2016-09-13 2018-03-22 삼성디스플레이 주식회사 표시장치
KR102439673B1 (ko) * 2017-06-19 2022-09-05 삼성디스플레이 주식회사 표시 장치
KR20190010052A (ko) * 2017-07-20 2019-01-30 엘지전자 주식회사 디스플레이 디바이스
CN109725450B (zh) * 2017-10-30 2022-02-08 瀚宇彩晶股份有限公司 显示面板与其制造方法
US20190195940A1 (en) * 2017-12-26 2019-06-27 Shenzhen China Star Optoelectronics Technology Co., Ltd. Detecting circuit and display panel
KR102576214B1 (ko) * 2018-06-28 2023-09-07 삼성디스플레이 주식회사 배선 기판 및 이를 포함하는 표시 장치
KR102636630B1 (ko) * 2018-12-28 2024-02-13 엘지디스플레이 주식회사 표시 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090102215A (ko) * 2008-03-25 2009-09-30 이성호 내로우 비엠을 갖는 액정표시장치
CN109345961A (zh) * 2018-12-20 2019-02-15 深圳市华星光电半导体显示技术有限公司 一种窄边框显示器
CN209216555U (zh) * 2019-01-29 2019-08-06 合肥京东方显示技术有限公司 一种覆晶薄膜及显示装置
CN110109301A (zh) * 2019-04-23 2019-08-09 深圳市华星光电半导体显示技术有限公司 一种阵列基板、显示装置
CN110320698A (zh) * 2019-07-23 2019-10-11 惠州市华星光电技术有限公司 背光模组及液晶显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112433413A (zh) * 2020-11-26 2021-03-02 深圳市华星光电半导体显示技术有限公司 液晶显示器及其串扰消除方法

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