CN111355126A - 倒装芯片底发射的垂直腔面发射激光器封装及其制作方法 - Google Patents
倒装芯片底发射的垂直腔面发射激光器封装及其制作方法 Download PDFInfo
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Abstract
本发明公开了一种倒装芯片底发射的垂直腔面发射激光器封装及其制作方法,其包含:形成一垂直腔面发射激光器柱阵列;对垂直腔面发射激光器柱阵列涂布一介电层,介电层填满柱体之间的沟槽,形成垂直腔面发射激光器柱阵列并覆盖柱体;对垂直腔面发射激光器柱阵列进行平面化,以移除覆盖柱体的介电层,使得柱体一顶表面曝露出一金属层;于柱体一顶表面上的金属层涂布一金属涂层,金属涂层定义垂直腔面发射激光器柱阵列的一接触图案;以及,在金属涂层上涂布焊料以将垂直腔面发射激光器柱阵列倒装到一基板封装上。本发明可以消除连接线及连接垫的需求,以减少倒装芯片垂直腔面发射激光器的面积,以及简化后续的光刻及金属相关制程。
Description
【技术领域】
本发明涉及一种垂直腔面发射激光器(vertical cavity surface emittinglasers;VCSELs),特别是关于一种倒装芯片垂直腔面发射激光器,可以消除连接线及连接垫的需求,以减少倒装芯片垂直腔面发射激光器的面积,以及利用垂直腔面发射激光器柱数组中柱体间形成沟槽的平面化结构,以简化后续的光刻及金属相关制程。
【背景技术】
半导体激光器被用于许多需要高功率照明的成像应用中,如用于三维成像的结构光源、激光探测和测距(LADAR)、飞时测距法(TOF)三维成像、航空防御和聚变研究等。垂直腔面发射激光器(VCSELs)由于其在低功率、高频等方面的优越性和制造上的优势,在众多半导体激光器中得到了广泛的应用。
垂直腔面发射激光器(VCSEL)是一种半导体微型激光二极管,通常以圆柱形光束发射光。光束由制造它的基板表面垂直发射。由于VCSEL中的光束从基板表面垂直发射,所以在分离成单独的器件之前,可以在晶圆上进行测试。这降低了器件的制作成本,也使得VCSEL不仅可在一维阵列中构建,而且可在二维阵列中构建。
相比于大多数边缘发射激光器,VCSEL通常具有较大的输出孔径。这使得VCSEL产生较小的输出光束发散角,且造就了与光纤的高耦合效率。相比于大多数边缘发射激光器,VCSEL还具有高反射率的镜零件,这也降低了VCSEL的阈值电流,从而降低功耗。低阈值电流也使得VCSEL具有较高的固有调制带宽。在有源区的增益带内,VCSEL的波长也可以通过调整反射层的厚度调节。
在VCSEL封装组件中,VCSEL装置通过焊料或环氧树脂于正向安装于封装的基板。然后可以使用引线将VCSEL装置连接至外部电路。正向发射VCSEL的引线连接缺点是会增加VCSEL封装组件的封装面积。并且,由于有源区(产生热量的部位)位在晶圆的顶部,所以热源远离位于晶圆背面的散热器。当热无法快速地由晶圆的正向排除,这将会显著地提高VCSEL装置的接面温度。
因此,期望能提供一种装置及方法来克服上述问题。
【发明内容】
为了克服上述习知技术的缺点,本发明提供下列各种实施例来解决上述问题。
本发明一实施例揭露一种倒装芯片底发射的垂直腔面发射激光器封装的制作方法。制作方法包含:形成一垂直腔面发射激光器柱阵列;对垂直腔面发射激光器柱阵列涂布一介电层,介电层填满柱体之间的沟槽,形成垂直腔面发射激光器柱阵列并覆盖柱体;对垂直腔面发射激光器柱阵列进行平面化,以移除覆盖柱体的介电层,使得柱体一顶表面曝露出一金属层;于柱体一顶表面上的金属层涂布一金属涂层,金属涂层定义垂直腔面发射激光器柱阵列的一接触图案;以及,在金属涂层上涂布焊料以将垂直腔面发射激光器柱阵列倒装到一基板封装上。
本发明一实施例揭露一种倒装芯片底发射的垂直腔面发射激光器封装的制作方法。制作方法包含:形成一垂直腔面发射激光器柱阵列,其包括:形成一第一镜单元于一基板上;形成一有源区于第一镜单元上;形成一第二镜单元于有源区上;涂布金属层于第二镜单元上;以及,形成多数个柱体,柱体曝露第一镜单元、有源区及第二镜单元的一部分;对垂直腔面发射激光器柱阵列涂布一介电层,介电层填满柱体之间的沟槽,形成垂直腔面发射激光器柱阵列并覆盖柱体;对垂直腔面发射激光器柱阵列进行平面化,以移除覆盖柱体的介电层,使得柱体一顶表面曝露出一金属层;于柱体一顶表面上的金属层涂布一金属涂层,金属涂层定义垂直腔面发射激光器柱阵列的一接触图案,其中金属涂层将多数个柱体连接在一起;以及,在金属涂层上涂布焊料以将垂直腔面发射激光器柱阵列倒装到一基板封装上。
本发明一实施例揭露一种倒装芯片底发射的垂直腔面发射激光器封装。倒装芯片底发射的垂直腔面发射激光器封装包括一垂直腔面发射激光器柱阵列。一介电层填满柱体之间的沟槽,形成垂直腔面发射激光器柱阵列。垂直腔面发射激光器柱阵列被平面化,使得所述柱体一顶表面曝露出一金属层。一金属涂层位于柱体一顶表面上的金属层上。金属涂层定义垂直腔面发射激光器柱阵列的一接触图案,其中金属涂层将多数个所述柱体连接在一起。焊料涂布在金属涂层上以将垂直腔面发射激光器柱阵列倒装到一基板封装上。
【附图说明】
本发明进一步于以下附图详细说明。附图不是为了限制本发明范围,而是为了说明本发明的特定特征。相同的标号将在整个附图中使用,以参考相同或类似的器件。
图1A-图1E表示根据本发明一实施例形成用于倒装芯片的垂直腔面发射激光器(VCSEL)柱数组的横向截面示意图。
图2A-图2B表示根据本发明一实施例使用图1A-图1E的垂直腔面发射激光器(VCSEL)柱数组形成倒装芯片底发射的垂直腔面发射激光器封装的横向截面示意图。
附图标号说明
10 垂直腔面发射激光器封装
12 垂直腔面发射激光器(柱)数组
14 基板
16 (沉积)材质
18、20 分布式布拉格反射镜
22 有源区
24 金属接触层
26、P 柱体
28 沟槽
30 披覆层(介电层)
32 金属涂层
32A 接触图案
34 焊料
36 封装基板
38 金属垫
40、C 电连接件
42 光学配件
【具体实施方式】
以下结合附图的描述,旨在说明本发明当前的优选实施例,并非表示构造及/或使用本发明的唯一形式。本说明书结合所示实施例阐述了用于构造和操作本发明的功能和步骤顺序。不过,应当理解,相同或等效的功能和顺序可以通过不同的实施例来实现,这些实施例也意在包含本发明揭露的精神和范围内。
请参考图1A-1B,可以参见本发明实施例中一种形成倒装芯片底发射的垂直腔面发射激光器封装10的制作方法。垂直腔面发射激光器封装10相比习知技术的设计,具有多种优点:(1)采用一步焊料回流组装工艺(re-flow assembly process)的倒装配置;(2)使用蚀刻沟槽的平面化结构以形成垂直腔面发射激光器封装10的垂直腔面发射激光器柱阵列12,以简化后续的光刻及金属相关制程;以及,(3)底发射的垂直腔面发射激光器可选择性配置光圈透镜及其他光学配件于芯片背面。根据一实施例,对于3D传感应用,本实施例中的垂直腔面发射激光器封装10波长为940奈米、1120奈米或1400奈米;对于诸如光纤泵激光器的功率应用,其波长为980奈米。
参考图1A,垂直腔面发射激光器(以下简称VCSEL)阵列12在基板14上形成。基板14可以是砷化镓(GaAs)基板14或类似材质。多种材质16可沉积在基板14以形成VCSEL阵列12。根据一个实施例,一对分布式布拉格反射镜(DBR)18及20可形成在基板14上并与基板14平行。分布式布拉格反射镜18及20可以由多数个层构成。DBR18及20也可以通过设置具有不同光学阻抗交替材质的多数层来构成;一般而言,多数层是由高光学阻抗及低光学阻抗交替地形成。
有源区22可以形成于一对分布式布拉格反射镜(DBR)18及20之间。有源区22由一或多数个量子阱构成以产生激光。金属层或金属接触层24(以下统称为金属接触层24)可以形成在上述各种材质16上。在本实施例中,金属接触层24可以形成在分布式布拉格反射镜18的顶端。
然后可以形成VCSEL阵列12。VCSEL阵列12可以以标题为“柱状限制底发射结构的垂直腔面发射激光器”的共同申请专利中描述的方式形成,其为美国专利申请号第16/208,958号,发明人为鲍益勤、马基德·里亚齐亚特、吴大中、威尔逊·基以及鲍浚,通过引用将其全部并入本发明说明中。
可以参见图1B,VCSEL阵列12通过蚀刻多数个柱体26而形成柱阵列。柱体26可以通过在其间形成的一沟槽28而彼此区隔。可以将柱体26蚀刻至一深度以曝露分布式布拉格反射镜20、有源区22及分布式布拉格反射镜18的一部分。在本实施例中,高定向电感耦合等离子体反应离子蚀刻(directional Inductive Coupled Plasma Reactive Ion Etcher;ICP-RIE))可用于蚀刻高度各向异性的柱体26。通过使用ICP-RIE,柱体26可以具有贴近垂直侧壁的圆柱状横截面轮廓。在一实施例中,柱体26可以具有5-50um直径范围内的外型。由于湿法化学各向同性蚀刻会造成柱体26的侧壁太薄,这将在制作小尺寸VCSEL装置时出现问题;采用ICP-RIE进行蚀刻会是很重要的一环。因此,具有各向异性垂直侧壁轮廓的柱体26应采用ICP-RIE蚀刻。
披覆层或是介电层30(Spin-On Dielectric Coating,以下统称为披覆层30)可以涂布在VCSEL柱阵列12。披覆层30可以是旋涂式玻璃(Spin-On glass,SOG)介电质例如聚酰亚胺(Polyimide)、苯并环丁烯(Benzocyclobutene,BCB))或一溶剂基化学介电膜。披覆层30可涂布而流入沟槽28中,并覆盖形成VCSEL柱阵列12的柱体26蚀刻表面。
如图1D所示,一化学机械抛光(chemical mechanical polishing,CMP)制程可以应用于VCSEL柱阵列12。CMP制程是利用化学和机械力的组合使表面光滑的制程。CMP制程可以用于暴露金属接触24。金属接触层24可以用作如图1D所示的抛光或蚀刻停止层。
一旦VCSEL柱阵列12表面通过CMP制程平坦化而曝露金属接触层24,一金属涂层32可以如图1E所示沉积。金属涂层32既可以做为电连接和热连接,也可以如下所述作为焊料附着基础。
如图1E及图2A所示,一旦VCSEL柱阵列12表面通过CMP制程平坦化,金属涂层32可以沉积而定义出一接触图案32A。不同组的柱体26可以连接在一起以形成接触图案32A。在本实施例中,位在VCSEL柱阵列12内部的所有柱体26可以被连接在一起,而位在周边的柱体26则否。如上所述,接触图案32A可以作为电连接及热连接,也可以做为焊料附着基础。
如图2B所示,焊料或导电环氧树脂34(以下统称为焊料34)可以涂布在接触图案32A。VCSEL柱阵列12可以倒装在一封装基板36而形成底发射的垂直腔面发射激光器封装10。
由于本实施例设计用于底发射的垂直腔面发射激光器封装,因此需要配置倒装结构。在习知技术中,倒装芯片安装是基于VCSEL柱阵列(或平台)上放置专用焊料球或焊料于VCSEL柱阵列或平台上。在本发明中,VCSEL柱阵列12则是在每一个柱体32的顶部上方具有焊料覆盖。通过在接触图案32A的顶部上电化学镀上一薄层焊料34(例如金锡合金Au-Sn),然后将VCSEL柱阵列12倒置以贴合并连接(通过一熔炉回流过程)至封装基板36或散热基板侧上的金属垫38接收端。VCSEL柱阵列12可以具有一光圈透镜及其他光学配件42贴附于其VCSEL柱阵列12的背面。
如同以标题为“倒装芯片底发射VCSEL封装”的共同申请专利中描述,其为美国专利申请号第16/239,083号,发明人为鲍益勤,通过引用将其全部并入本发明说明中。垂直腔面发射激光器封装10可以使用底部照明VCSEL柱阵列12,配置成倒装芯片结构,并且可以使用电连接件40,例如通孔或环绕连接,以到达基板14的背面、金属触点和/或光学配件42,而无需在组装和封装过程中使用任何连接线。
本发明实施例描述一种底发射VCSEL柱阵列12,配置有倒装芯片结构,以及在柱体26之间使用蚀刻沟槽30的平面化结构,以简化后续的光刻及金属沉积过程。可以通过简单的焊料回流工艺(re-flowprocess),加上在柱体26”上方”的焊料尖端,以及电连接件40,例如通孔或环绕连接,以完成连接VCSEL柱阵列12,并将所需的所有电连接到封装基板36的完整组装。上述特点消除了传统的两阶段工艺的需求,一是芯片贴合,另一是引线连接;本发明将组装及封装过程简化为一个焊料回流工艺(re-flow process),另外通过消除芯片区外的长连接线及额外的连接垫,彻底地减少封装尺寸的面积。上述配置大幅地提高了封装VCSEL柱阵列12的成品率,同时显著地降低了垂直腔面发射激光器封装10的封装形式及面积。
连接线配置一般需要连接垫,以延展至VCSEL柱阵列12覆盖面积的外部。在任何给定尺寸中,连接线配置可将整个组件的封装尺寸延长2倍于VCSEL柱阵列12的实际尺寸。因此,在二维配置(X及Y方向)中,也意味着延展4倍于VCSEL柱阵列12的实际面积。在任何有限空间的手持应用中,例如手机或是任何移动设备,习知技术中如此大面积的封装会是一个主要问题。
虽然上述已经根据各种具体实施例描述了本发明,但是本领域技术人员可以知道,本发明的实施例可以通过在权利要求书的精神和范围内进行修改来实施。
Claims (20)
1.一种倒装芯片底发射的垂直腔面发射激光器封装的制作方法,其特征在于,包括以下步骤:
形成一垂直腔面发射激光器柱阵列,对所述垂直腔面发射激光器柱阵列涂布一介电层,所述介电层填满柱体之间的沟槽,形成所述垂直腔面发射激光器柱阵列并覆盖所述柱体;
对所述垂直腔面发射激光器柱阵列进行平面化,以移除覆盖所述柱体的所述介电层,使得所述柱体一顶表面曝露出一金属层;
于所述柱体一顶表面上的所述金属层涂布一金属涂层,所述金属涂层定义所述垂直腔面发射激光器柱阵列的一接触图案;以及,
在所述金属涂层上涂布焊料以将所述垂直腔面发射激光器柱阵列倒装到一基板封装上。
2.如权利要求1所述的制作方法,其特征在于:包括形成电连接于所述垂直腔面发射激光器柱阵列的一周边,以连接所述基板封装及所述垂直腔面发射激光器柱阵列的一基板的一背面。
3.如权利要求2所述的制作方法,其特征在于:形成所述电连接包括形成至少一个环绕连接。
4.如权利要求2所述的制作方法,其特征在于:形成所述电连接包括形成至少一个导电通孔。
5.如权利要求1所述的制作方法,其特征在于:形成所述垂直腔面发射激光器柱阵列包括:
形成一第一镜单元于一基板上;
形成一有源区于所述第一镜单元上;
形成一第二镜单元于所述有源区上;
涂布所述金属层于所述第二镜单元上;以及,
通过定向电感耦合等离子体反应离子蚀刻,形成多数个所述柱体,所述柱体曝露所述第一镜单元、所述有源区及所述第二镜单元的一部分。
6.如权利要求1所述的制作方法,其特征在于:所述介电层是聚酰亚胺、苯并环丁烯或一溶剂基化学介电膜。
7.如权利要求1所述的制作方法,其特征在于:对所述垂直腔面发射激光器柱阵列进行平面化,以移除覆盖所述柱体的所述介电层的步骤包括于所述垂直腔面发射激光器柱阵列进行一化学机械抛光技术。
8.如权利要求7所述的制作方法,其特征在于:所述金属层是一化学机械抛光指标及抛光停止层。
9.如权利要求1所述的制作方法,其特征在于:包括贴附一光圈透镜于所述垂直腔面发射激光器柱阵列的一背面。
10.一种倒装芯片底发射的垂直腔面发射激光器封装的制作方法,其特征在于,包括以下步骤:
形成一垂直腔面发射激光器柱阵列,包括:
形成一第一镜单元于一基板上;
形成一有源区于所述第一镜单元上;
形成一第二镜单元于所述有源区上;
涂布所述金属层于所述第二镜单元上;以及,
形成多数个柱体,所述柱体曝露所述第一镜单元、所述有源区及所述第二镜单元的一部分;
对所述垂直腔面发射激光器柱阵列涂布一介电层,所述介电层填满所述柱体之间的沟槽,形成所述垂直腔面发射激光器柱阵列并覆盖所述柱体;
对所述垂直腔面发射激光器柱阵列进行平面化,以移除覆盖所述柱体的所述介电层,使得所述柱体一顶表面曝露出一金属层;
于所述柱体一顶表面上的所述金属层涂布一金属涂层,所述金属涂层定义所述垂直腔面发射激光器柱阵列的一接触图案,其中所述金属涂层将所述多数个柱体连接在一起;以及,
在所述金属涂层上涂布焊料以将所述垂直腔面发射激光器柱阵列倒装到一基板封装上。
11.如权利要求10所述的制作方法,其特征在于:包括形成电连接于所述垂直腔面发射激光器柱阵列的一周边,以连接所述基板封装及所述垂直腔面发射激光器柱阵列的一基板的一背面。
12.如权利要求11所述的制作方法,其特征在于:所述形成电连接的步骤包括形成至少一个环绕连接。
13.如权利要求11所述的制作方法,其特征在于:所述形成电连接的步骤包括形成至少一个导电通孔。
14.如权利要求10所述的制作方法,其特征在于:形成所述垂直腔面发射激光器柱阵列的步骤包括通过定向电感耦合等离子体反应离子蚀刻以形成所述多数个柱体。
15.如权利要求10所述的制作方法,其特征在于:所述介电层是聚酰亚胺、苯并环丁烯或一溶剂基化学介电膜。
16.如权利要求10所述的制作方法,其特征在于:对所述垂直腔面发射激光器柱阵列进行平面化,以移除覆盖所述柱体的所述介电层的步骤包括于所述垂直腔面发射激光器柱阵列进行一化学机械抛光技术,其中所述金属层是一化学机械抛光指标及抛光停止层。
17.如权利要求10所述的制作方法,其特征在于:包括贴附一光学组件于所述垂直腔面发射激光器柱阵列的一背面。
18.一种倒装芯片底发射的垂直腔面发射激光器封装,其特征在于,包括:
一垂直腔面发射激光器柱阵列;
一介电层填满柱体之间的沟槽,形成所述垂直腔面发射激光器柱阵列,其中所述垂直腔面发射激光器柱阵列被平面化,使得所述柱体一顶表面曝露出一金属层;
一金属涂层位于所述柱体一顶表面上的所述金属层上,所述金属涂层定义所述垂直腔面发射激光器柱阵列的一接触图案,其中所述金属涂层将多数个所述柱体连接在一起;以及,
焊料涂布在所述金属涂层上以将所述垂直腔面发射激光器柱阵列倒装到一基板封装上。
19.如权利要求18所述的倒装芯片底发射的垂直腔面发射激光器封装,其特征在于:包括形成电连接于所述垂直腔面发射激光器柱阵列的一周边。
20.如权利要求18所述的倒装芯片底发射的垂直腔面发射激光器封装,其特征在于:包括贴附一光学组件于所述垂直腔面发射激光器柱阵列的一背面。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113839304A (zh) * | 2021-07-30 | 2021-12-24 | 湖北光安伦芯片有限公司 | 非氧化工艺微米柱阵列大功率vcsel结构及其制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US10951003B1 (en) * | 2020-02-25 | 2021-03-16 | Inphi Corporation | Light source for integrated silicon photonics |
US11165509B1 (en) | 2020-06-05 | 2021-11-02 | Marvell Asia Pte, Ltd. | Method for co-packaging light engine chiplets on switch substrate |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661076A (en) * | 1996-03-29 | 1997-08-26 | Electronics And Telecommunications Research Institute | Method for fabricating a vertical-cavity surface-emitting laser diode |
US20050100070A1 (en) * | 2003-09-18 | 2005-05-12 | Seiko Epson Corporation | Surface-emitting type semiconductor laser and method for manufacturing the same |
US20070091961A1 (en) * | 2005-10-07 | 2007-04-26 | Chao-Kun Lin | Method and structure for low stress oxide VCSEL |
US8759865B2 (en) * | 2010-08-03 | 2014-06-24 | Industrial Technology Research Institute | Light emitting diode chip, light emitting diode package structure, and method for forming the same |
US20150255955A1 (en) * | 2014-03-04 | 2015-09-10 | Princeton Optronics Inc. | Processes for Making Reliable VCSEL Devices and VCSEL arrays |
US20170033535A1 (en) * | 2015-07-30 | 2017-02-02 | Optipulse Inc. | Rigid High Power and High Speed Lasing Grid Structures |
Family Cites Families (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6077582A (ja) * | 1983-10-05 | 1985-05-02 | Matsushita Electric Ind Co Ltd | 同調補助装置 |
JPS6120610A (ja) * | 1984-07-06 | 1986-01-29 | Mitsubishi Electric Corp | 熱間可逆圧延の板巾制御方法 |
US5034344A (en) * | 1989-07-17 | 1991-07-23 | Bell Communications Research, Inc. | Method of making a surface emitting semiconductor laser |
US5031187A (en) * | 1990-02-14 | 1991-07-09 | Bell Communications Research, Inc. | Planar array of vertical-cavity, surface-emitting lasers |
US5029176A (en) * | 1990-05-11 | 1991-07-02 | Bell Communications Research, Inc. | Monolithic multiple-wavelength laser array |
US5436922A (en) * | 1990-09-12 | 1995-07-25 | Seiko Epson Corporation | Surface emission type semiconductor laser |
US5537666A (en) * | 1990-09-12 | 1996-07-16 | Seiko Epson Coropration | Surface emission type semiconductor laser |
US5104824A (en) * | 1990-11-06 | 1992-04-14 | Bell Communications Research, Inc. | Selective area regrowth for surface-emitting lasers and other sharp features |
US5073041A (en) * | 1990-11-13 | 1991-12-17 | Bell Communications Research, Inc. | Integrated assembly comprising vertical cavity surface-emitting laser array with Fresnel microlenses |
US5216263A (en) * | 1990-11-29 | 1993-06-01 | Xerox Corporation | High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays |
JP2699665B2 (ja) * | 1991-01-28 | 1998-01-19 | 日本電気株式会社 | 面発光半導体レーザ |
JP3123026B2 (ja) * | 1992-08-24 | 2001-01-09 | 日本電信電話株式会社 | Si基板上面発光レーザ |
JP3097938B2 (ja) * | 1992-10-06 | 2000-10-10 | 日本電信電話株式会社 | 面発光半導体レーザ |
JPH0738196A (ja) * | 1993-07-22 | 1995-02-07 | Nec Corp | 面発光素子 |
US5796714A (en) * | 1994-09-28 | 1998-08-18 | Matsushita Electric Industrial Co., Ltd. | Optical module having a vertical-cavity surface-emitting laser |
KR0146713B1 (ko) * | 1994-09-30 | 1998-11-02 | 양승택 | 상부 표면방출 마이크로 레이저의 제조방법 |
US5468656A (en) * | 1994-11-29 | 1995-11-21 | Motorola | Method of making a VCSEL |
US5482891A (en) * | 1995-03-17 | 1996-01-09 | Motorola, Inc. | VCSEL with an intergrated heat sink and method of making |
JPH0964334A (ja) * | 1995-08-28 | 1997-03-07 | Toshiba Corp | 発光素子と外部変調器の集積素子 |
US5912913A (en) * | 1995-12-27 | 1999-06-15 | Hitachi, Ltd. | Vertical cavity surface emitting laser, optical transmitter-receiver module using the laser, and parallel processing system using the laser |
KR100204569B1 (ko) * | 1996-08-28 | 1999-06-15 | 정선종 | 편광 제어된 표면 방출 레이저 어레이의 구조 및 그 제조 방법 |
KR100243655B1 (ko) * | 1996-12-20 | 2000-02-01 | 정선종 | 3차원 공진기를 갖는 표면방출 레이저 및 그 제조방법 |
US6207973B1 (en) * | 1998-08-19 | 2001-03-27 | Ricoh Company, Ltd. | Light emitting devices with layered III-V semiconductor structures |
US7881359B2 (en) * | 1999-04-23 | 2011-02-01 | The Furukawa Electric Co., Ltd | Surface-emission semiconductor laser device |
US6275513B1 (en) * | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
US6177359B1 (en) * | 1999-06-07 | 2001-01-23 | Agilent Technologies, Inc. | Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
JP4010095B2 (ja) * | 1999-10-01 | 2007-11-21 | 富士ゼロックス株式会社 | 面発光型半導体レーザ及びレーザアレイ |
WO2001029881A2 (en) * | 1999-10-22 | 2001-04-26 | Teraconnect, Inc. | Method of making an optoelectronic device using multiple etch stop layers |
US6888871B1 (en) * | 2000-07-12 | 2005-05-03 | Princeton Optronics, Inc. | VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system |
US6570905B1 (en) * | 2000-11-02 | 2003-05-27 | U-L-M Photonics Gmbh | Vertical cavity surface emitting laser with reduced parasitic capacitance |
KR100708107B1 (ko) * | 2000-12-19 | 2007-04-16 | 삼성전자주식회사 | 전기 광학적 특성이 개선된 반도체 광 방출 장치 및 그제조방법 |
US6362069B1 (en) * | 2000-12-28 | 2002-03-26 | The Trustees Of Princeton University | Long-wavelength VCSELs and method of manufacturing same |
US6878958B2 (en) * | 2001-03-26 | 2005-04-12 | Gazillion Bits, Inc. | Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector |
JP2003023211A (ja) * | 2001-07-09 | 2003-01-24 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法 |
DE10223540B4 (de) * | 2002-05-27 | 2006-12-21 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleiterlaservorrichtung |
US20050079642A1 (en) * | 2003-10-14 | 2005-04-14 | Matsushita Elec. Ind. Co. Ltd. | Manufacturing method of nitride semiconductor device |
JP4116587B2 (ja) * | 2004-04-13 | 2008-07-09 | 浜松ホトニクス株式会社 | 半導体発光素子及びその製造方法 |
WO2005122350A1 (ja) * | 2004-06-11 | 2005-12-22 | Ricoh Company, Ltd. | 面発光レーザダイオードおよびその製造方法 |
US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
US20070071056A1 (en) * | 2005-09-09 | 2007-03-29 | Ye Chen | Laser ranging with large-format VCSEL array |
JP5194432B2 (ja) * | 2005-11-30 | 2013-05-08 | 株式会社リコー | 面発光レーザ素子 |
US20080054291A1 (en) * | 2006-08-31 | 2008-03-06 | Samsung Electronics Co., Ltd. | Vertical semiconductor light-emitting device and method of manufacturing the same |
KR101414911B1 (ko) * | 2007-03-23 | 2014-07-04 | 스미토모덴키고교가부시키가이샤 | 포토닉 결정 레이저 및 포토닉 결정 레이저의 제조방법 |
CN102664348B (zh) * | 2007-11-14 | 2014-12-31 | 株式会社理光 | 表面发射激光器及阵列、光学扫描装置、成像设备、光学传输模块和系统 |
EP2277246B1 (en) * | 2008-05-02 | 2022-11-09 | Ricoh Company, Ltd. | Vertical cavity surface emitting laser device, vertical cavity surface emitting laser array, optical scanning apparatus, image forming apparatus, optical transmission module and optical transmission system |
JP5408477B2 (ja) * | 2008-05-13 | 2014-02-05 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5316783B2 (ja) * | 2008-05-15 | 2013-10-16 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
RU2010152355A (ru) * | 2008-05-22 | 2012-06-27 | Коннектор Оптикс (Ru) | Способ для прикрепления оптических компонентов на интегральные схемы на основе кремния |
JP2009295792A (ja) * | 2008-06-05 | 2009-12-17 | Ricoh Co Ltd | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
US8995485B2 (en) * | 2009-02-17 | 2015-03-31 | Trilumina Corp. | High brightness pulsed VCSEL sources |
US7949024B2 (en) * | 2009-02-17 | 2011-05-24 | Trilumina Corporation | Multibeam arrays of optoelectronic devices for high frequency operation |
US8995493B2 (en) * | 2009-02-17 | 2015-03-31 | Trilumina Corp. | Microlenses for multibeam arrays of optoelectronic devices for high frequency operation |
US7851819B2 (en) * | 2009-02-26 | 2010-12-14 | Bridgelux, Inc. | Transparent heat spreader for LEDs |
JP2013051398A (ja) * | 2011-08-01 | 2013-03-14 | Ricoh Co Ltd | 面発光レーザ素子、光走査装置及び画像形成装置 |
JP5803545B2 (ja) * | 2011-10-12 | 2015-11-04 | ソニー株式会社 | 半導体レーザ素子、光電変換装置および光情報処理装置 |
JP6303255B2 (ja) * | 2011-12-02 | 2018-04-04 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
US8675706B2 (en) * | 2011-12-24 | 2014-03-18 | Princeton Optronics Inc. | Optical illuminator |
EP2917937B1 (en) * | 2012-11-07 | 2016-11-16 | Koninklijke Philips N.V. | Method for manufacturing a light emitting device including a filter and a protective layer |
US9324926B2 (en) * | 2012-11-07 | 2016-04-26 | Koninklijke Philips N.V. | Wavelength converted light emitting device |
JP6107089B2 (ja) * | 2012-11-30 | 2017-04-05 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
JP2016174136A (ja) * | 2015-03-16 | 2016-09-29 | 株式会社リコー | 面発光レーザアレイ、レーザ装置、点火装置、及び内燃機関 |
US20190363520A1 (en) * | 2016-09-19 | 2019-11-28 | Apple Inc. | Vertical Emitters Integrated on Silicon Control Backplane |
WO2018102955A1 (en) * | 2016-12-05 | 2018-06-14 | Goertek.Inc | Micro laser diode display device and electronics apparatus |
CA3072760A1 (en) * | 2017-08-14 | 2019-02-21 | Trilumina Corp. | A surface-mount compatible vcsel array |
US10205303B1 (en) * | 2017-10-18 | 2019-02-12 | Lumentum Operations Llc | Vertical-cavity surface-emitting laser thin wafer bowing control |
US10992100B2 (en) * | 2018-07-06 | 2021-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US20220013992A1 (en) * | 2018-09-25 | 2022-01-13 | Shenzhen Raysees Technology Co., Ltd. | Vertical Cavity Surface Emitting Laser (VCSEL) Array and Manufacturing Method |
-
2019
- 2019-01-28 US US16/258,976 patent/US11233377B2/en active Active
- 2019-12-27 CN CN201911383033.8A patent/CN111355126A/zh active Pending
-
2020
- 2020-03-19 US US16/824,390 patent/US11757255B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661076A (en) * | 1996-03-29 | 1997-08-26 | Electronics And Telecommunications Research Institute | Method for fabricating a vertical-cavity surface-emitting laser diode |
US20050100070A1 (en) * | 2003-09-18 | 2005-05-12 | Seiko Epson Corporation | Surface-emitting type semiconductor laser and method for manufacturing the same |
US20070091961A1 (en) * | 2005-10-07 | 2007-04-26 | Chao-Kun Lin | Method and structure for low stress oxide VCSEL |
US8759865B2 (en) * | 2010-08-03 | 2014-06-24 | Industrial Technology Research Institute | Light emitting diode chip, light emitting diode package structure, and method for forming the same |
US20150255955A1 (en) * | 2014-03-04 | 2015-09-10 | Princeton Optronics Inc. | Processes for Making Reliable VCSEL Devices and VCSEL arrays |
US20170033535A1 (en) * | 2015-07-30 | 2017-02-02 | Optipulse Inc. | Rigid High Power and High Speed Lasing Grid Structures |
US10153615B2 (en) * | 2015-07-30 | 2018-12-11 | Optipulse, Inc. | Rigid high power and high speed lasing grid structures |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113839304A (zh) * | 2021-07-30 | 2021-12-24 | 湖北光安伦芯片有限公司 | 非氧化工艺微米柱阵列大功率vcsel结构及其制备方法 |
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US20200220328A1 (en) | 2020-07-09 |
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