CN111354629B - 一种用于紫外LED的AlN缓冲层结构及其制作方法 - Google Patents
一种用于紫外LED的AlN缓冲层结构及其制作方法 Download PDFInfo
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- CN111354629B CN111354629B CN202010339063.5A CN202010339063A CN111354629B CN 111354629 B CN111354629 B CN 111354629B CN 202010339063 A CN202010339063 A CN 202010339063A CN 111354629 B CN111354629 B CN 111354629B
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- 230000008569 process Effects 0.000 claims abstract description 17
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 20
- 239000000463 material Substances 0.000 abstract description 16
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 14
- 238000005336 cracking Methods 0.000 abstract description 4
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- 241000711573 Coronaviridae Species 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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Abstract
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CN115986022A (zh) * | 2023-03-17 | 2023-04-18 | 江西兆驰半导体有限公司 | 深紫外led外延片及其制备方法、深紫外led |
CN117463782B (zh) * | 2023-11-21 | 2024-05-28 | 佛山通宝精密合金股份有限公司 | Ti-Al-Ti多层层状复合材料的制备方法及其制得的复合材料 |
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