CN111334852B - 石英玻璃坩埚 - Google Patents

石英玻璃坩埚 Download PDF

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Publication number
CN111334852B
CN111334852B CN201911316941.5A CN201911316941A CN111334852B CN 111334852 B CN111334852 B CN 111334852B CN 201911316941 A CN201911316941 A CN 201911316941A CN 111334852 B CN111334852 B CN 111334852B
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China
Prior art keywords
layer
crucible
natural
quartz
synthetic
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Chinese (zh)
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CN111334852A (zh
Inventor
中尾年幸
北原江梨子
岸弘史
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Sumco Corp
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Sumco Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
CN201911316941.5A 2018-12-19 2019-12-19 石英玻璃坩埚 Active CN111334852B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-237641 2018-12-19
JP2018237641A JP7024700B2 (ja) 2018-12-19 2018-12-19 石英ガラスルツボ

Publications (2)

Publication Number Publication Date
CN111334852A CN111334852A (zh) 2020-06-26
CN111334852B true CN111334852B (zh) 2022-03-04

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CN201911316941.5A Active CN111334852B (zh) 2018-12-19 2019-12-19 石英玻璃坩埚

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JP (1) JP7024700B2 (https=)
KR (1) KR102342039B1 (https=)
CN (1) CN111334852B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111996589A (zh) * 2020-08-31 2020-11-27 宁夏富乐德石英材料有限公司 抑制引晶硅液面抖动的石英坩埚及其制备方法
US11987900B2 (en) * 2020-11-11 2024-05-21 Globalwafers Co., Ltd. Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
JP7673758B2 (ja) * 2020-12-18 2025-05-09 株式会社Sumco 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法
US20250270732A1 (en) * 2022-04-18 2025-08-28 Shin-Etsu Quartz Products Co., Ltd. Quartz glass crucible for pulling single crystal silicon ingot
CN116924661A (zh) * 2023-07-28 2023-10-24 新沂市中大石英科技有限公司 一种使用人工水晶石英砂生产高纯石英玻璃坩埚的方法
CN120309155B (zh) * 2025-06-16 2025-10-10 浙江美晶新材料股份有限公司 一种石英坩埚及其制备方法与应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0388793A (ja) * 1989-08-30 1991-04-15 Mitsubishi Materials Corp シリコン単結晶引上げ用石英ルツボ
CN102485972A (zh) * 2010-12-03 2012-06-06 日本超精石英株式会社 氧化硅玻璃坩埚
CN204918839U (zh) * 2015-09-11 2015-12-30 江西中昱新材料科技有限公司 一种石英坩埚
CN108531978A (zh) * 2018-04-09 2018-09-14 江阴龙源石英制品有限公司 一种大规模集成电路用5层复合石英坩埚及其制备方法和表面处理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05252157A (ja) 1992-03-06 1993-09-28 Matsushita Electric Ind Co Ltd 呼制御装置
JP3136533B2 (ja) 1995-04-28 2001-02-19 三菱マテリアルクォーツ株式会社 シリコン単結晶引上げ用石英ルツボ
JP4447738B2 (ja) 2000-05-31 2010-04-07 信越石英株式会社 多層構造の石英ガラスルツボの製造方法
KR100718314B1 (ko) * 2003-05-01 2007-05-15 신에쯔 세끼에이 가부시키가이샤 실리콘 단결정 인상용 석영유리 도가니 및 그 제조방법
JP4678667B2 (ja) 2004-06-07 2011-04-27 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
JP4789437B2 (ja) * 2004-07-16 2011-10-12 信越石英株式会社 シリコン単結晶引上げ用石英ガラスるつぼおよびその製造方法
KR100847500B1 (ko) 2006-03-30 2008-07-22 코바렌트 마테리얼 가부시키가이샤 실리카 유리 도가니
JP4798714B2 (ja) 2007-03-28 2011-10-19 コバレントマテリアル株式会社 シリコン単結晶引上用シリカガラスルツボ
US8272234B2 (en) 2008-12-19 2012-09-25 Heraeus Shin-Etsu America, Inc. Silica crucible with pure and bubble free inner crucible layer and method of making the same
WO2011013695A1 (ja) 2009-07-31 2011-02-03 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用シリカガラスルツボ
JP5685894B2 (ja) * 2010-11-05 2015-03-18 信越半導体株式会社 石英ガラスルツボ及びその製造方法、並びにシリコン単結晶の製造方法
KR101293526B1 (ko) * 2011-01-28 2013-08-06 쟈판 스파 쿼츠 가부시키가이샤 실리콘 단결정 인상용 석영 유리 도가니 및 그의 제조 방법
JP6351534B2 (ja) 2015-04-01 2018-07-04 クアーズテック株式会社 シリコン単結晶引き上げ用石英ガラスルツボ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0388793A (ja) * 1989-08-30 1991-04-15 Mitsubishi Materials Corp シリコン単結晶引上げ用石英ルツボ
CN102485972A (zh) * 2010-12-03 2012-06-06 日本超精石英株式会社 氧化硅玻璃坩埚
CN204918839U (zh) * 2015-09-11 2015-12-30 江西中昱新材料科技有限公司 一种石英坩埚
CN108531978A (zh) * 2018-04-09 2018-09-14 江阴龙源石英制品有限公司 一种大规模集成电路用5层复合石英坩埚及其制备方法和表面处理方法

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KR102342039B1 (ko) 2021-12-22
CN111334852A (zh) 2020-06-26
JP7024700B2 (ja) 2022-02-24
KR20200076636A (ko) 2020-06-29
JP2020100515A (ja) 2020-07-02

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