KR102342039B1 - 석영 유리 도가니 - Google Patents

석영 유리 도가니 Download PDF

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Publication number
KR102342039B1
KR102342039B1 KR1020190169722A KR20190169722A KR102342039B1 KR 102342039 B1 KR102342039 B1 KR 102342039B1 KR 1020190169722 A KR1020190169722 A KR 1020190169722A KR 20190169722 A KR20190169722 A KR 20190169722A KR 102342039 B1 KR102342039 B1 KR 102342039B1
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South Korea
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layer
natural
bubble
crucible
quartz glass
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Korean (ko)
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KR20200076636A (ko
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토시유키 나카오
에리코 키타하라
히로시 키시
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가부시키가이샤 사무코
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
KR1020190169722A 2018-12-19 2019-12-18 석영 유리 도가니 Active KR102342039B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-237641 2018-12-19
JP2018237641A JP7024700B2 (ja) 2018-12-19 2018-12-19 石英ガラスルツボ

Publications (2)

Publication Number Publication Date
KR20200076636A KR20200076636A (ko) 2020-06-29
KR102342039B1 true KR102342039B1 (ko) 2021-12-22

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Family Applications (1)

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KR1020190169722A Active KR102342039B1 (ko) 2018-12-19 2019-12-18 석영 유리 도가니

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JP (1) JP7024700B2 (https=)
KR (1) KR102342039B1 (https=)
CN (1) CN111334852B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111996589A (zh) * 2020-08-31 2020-11-27 宁夏富乐德石英材料有限公司 抑制引晶硅液面抖动的石英坩埚及其制备方法
US11987900B2 (en) * 2020-11-11 2024-05-21 Globalwafers Co., Ltd. Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
JP7673758B2 (ja) * 2020-12-18 2025-05-09 株式会社Sumco 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法
US20250270732A1 (en) * 2022-04-18 2025-08-28 Shin-Etsu Quartz Products Co., Ltd. Quartz glass crucible for pulling single crystal silicon ingot
CN116924661A (zh) * 2023-07-28 2023-10-24 新沂市中大石英科技有限公司 一种使用人工水晶石英砂生产高纯石英玻璃坩埚的方法
CN120309155B (zh) * 2025-06-16 2025-10-10 浙江美晶新材料股份有限公司 一种石英坩埚及其制备方法与应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130174777A1 (en) 2010-11-05 2013-07-11 Shin-Etsu Handotai Co., Ltd. Quartz glass crucible, method for producing the same, and method for producing silicon single crystal

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Publication number Priority date Publication date Assignee Title
JP3026088B2 (ja) * 1989-08-30 2000-03-27 三菱マテリアル株式会社 シリコン単結晶引上げ用石英ルツボ
JPH05252157A (ja) 1992-03-06 1993-09-28 Matsushita Electric Ind Co Ltd 呼制御装置
JP3136533B2 (ja) 1995-04-28 2001-02-19 三菱マテリアルクォーツ株式会社 シリコン単結晶引上げ用石英ルツボ
JP4447738B2 (ja) 2000-05-31 2010-04-07 信越石英株式会社 多層構造の石英ガラスルツボの製造方法
KR100718314B1 (ko) * 2003-05-01 2007-05-15 신에쯔 세끼에이 가부시키가이샤 실리콘 단결정 인상용 석영유리 도가니 및 그 제조방법
JP4678667B2 (ja) 2004-06-07 2011-04-27 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
JP4789437B2 (ja) * 2004-07-16 2011-10-12 信越石英株式会社 シリコン単結晶引上げ用石英ガラスるつぼおよびその製造方法
KR100847500B1 (ko) 2006-03-30 2008-07-22 코바렌트 마테리얼 가부시키가이샤 실리카 유리 도가니
JP4798714B2 (ja) 2007-03-28 2011-10-19 コバレントマテリアル株式会社 シリコン単結晶引上用シリカガラスルツボ
US8272234B2 (en) 2008-12-19 2012-09-25 Heraeus Shin-Etsu America, Inc. Silica crucible with pure and bubble free inner crucible layer and method of making the same
WO2011013695A1 (ja) 2009-07-31 2011-02-03 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用シリカガラスルツボ
JP5500689B2 (ja) * 2010-12-03 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボ
KR101293526B1 (ko) * 2011-01-28 2013-08-06 쟈판 스파 쿼츠 가부시키가이샤 실리콘 단결정 인상용 석영 유리 도가니 및 그의 제조 방법
JP6351534B2 (ja) 2015-04-01 2018-07-04 クアーズテック株式会社 シリコン単結晶引き上げ用石英ガラスルツボ
CN204918839U (zh) * 2015-09-11 2015-12-30 江西中昱新材料科技有限公司 一种石英坩埚
CN108531978B (zh) * 2018-04-09 2021-01-01 江阴龙源石英制品有限公司 一种大规模集成电路用5层复合石英坩埚及其制备方法和表面处理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130174777A1 (en) 2010-11-05 2013-07-11 Shin-Etsu Handotai Co., Ltd. Quartz glass crucible, method for producing the same, and method for producing silicon single crystal

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Publication number Publication date
CN111334852A (zh) 2020-06-26
JP7024700B2 (ja) 2022-02-24
KR20200076636A (ko) 2020-06-29
CN111334852B (zh) 2022-03-04
JP2020100515A (ja) 2020-07-02

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