CN111290148A - Method for manufacturing modulator with SiO2 substrate formed based on wafer bonding and modulator structure thereof - Google Patents
Method for manufacturing modulator with SiO2 substrate formed based on wafer bonding and modulator structure thereof Download PDFInfo
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- CN111290148A CN111290148A CN202010102693.0A CN202010102693A CN111290148A CN 111290148 A CN111290148 A CN 111290148A CN 202010102693 A CN202010102693 A CN 202010102693A CN 111290148 A CN111290148 A CN 111290148A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- 229910052681 coesite Inorganic materials 0.000 title claims abstract description 55
- 229910052906 cristobalite Inorganic materials 0.000 title claims abstract description 55
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 55
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 55
- 229910052682 stishovite Inorganic materials 0.000 title claims abstract description 55
- 229910052905 tridymite Inorganic materials 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000005468 ion implantation Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 52
- 238000010586 diagram Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a modulator manufacturing method for forming a SiO2 substrate based on wafer bonding and a modulator structure thereof, wherein the method comprises the following steps: providing an SOI wafer and a Si wafer, manufacturing a first groove on the surface of the Si wafer and filling an SiO2 substrate layer of the first groove; bonding one side of the top silicon layer of the SOI wafer with the side, filled with the SiO2 substrate layer, of the Si wafer in an opposite mode, removing the Si substrate layer and the SiO2 layer of the SOI wafer, and obtaining the SiO2 substrate wafer containing the top silicon; and manufacturing a modulator waveguide on the top silicon of the SiO2 substrate wafer, and manufacturing an insulating medium layer and an electrode connected to a heavily doped region of the modulator waveguide to finish the manufacture of the modulator. The manufacturing method and the manufactured modulator structure can realize the matching of the optical wave and the microwave group speed and the impedance matching of the device, simultaneously reduce the microwave loss of the device, not only can meet the application requirement of a high-speed modulator, but also can realize non-airtight packaging, have more stable mechanical property and are suitable for large-scale manufacturing and commercialization.
Description
Technical Field
The invention relates to the technical field of modulators, in particular to a method for manufacturing a modulator with a SiO2 substrate formed on the basis of wafer bonding and a modulator structure thereof.
Background
The silicon optical modulator can realize high-speed data modulation, is one of core devices of a high-speed silicon optical chip, and generally adopts a traveling wave electrode structure in order to realize high-speed transmission. The existing modulator structure has the limitations of dielectric constant and size of manufacturing materials, so that the difference between the microwave group refractive index of the traveling wave electrode and the group refractive index of the light wave is large, and therefore, the light wave and the microwave have large mismatch speed during transmission, the modulation bandwidth is narrow, and the characteristic impedance is difficult to be matched with 50 ohms; meanwhile, the modulator structure mostly adopts silicon as a substrate, and the problem of large microwave loss exists. It is because of these problems that the increase in modulator rate is greatly limited.
The refractive index of the microwave group of the traveling wave electrode can be improved through the scheme of hollowing the substrate, the characteristic impedance can be easily matched to 50 ohms, and meanwhile, the loss of the microwave in the substrate is reduced, so that the purpose of improving the working speed of the modulator is achieved. However, the wet-based substrate undercutting process has high requirements on process control, and meanwhile, in order to effectively reduce microwave loss, the undercut etched area is usually large, so that the mechanical structure performance of the cantilever beam structure modulator is unstable, and therefore, the reliability and yield of the device have great problems, and the device is not suitable for mass production.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a modulator manufacturing method for forming a SiO2 substrate based on wafer bonding and a modulator structure thereof, which are used for solving the problems that the traditional modulator manufacturing method is difficult to manufacture the modulator structure with high speed and stable performance, the process conditions are difficult to control, and the modulator is not suitable for large-scale production.
In order to achieve the purpose, the invention adopts the following technical scheme on one hand:
a modulator fabrication method for forming a SiO2 substrate based on wafer bonding, comprising:
providing an SOI wafer and a Si wafer, manufacturing a first groove on one side of the Si wafer, and manufacturing an SiO2 substrate layer to fill the first groove;
bonding the top silicon side of the SOI wafer and the side surface of the Si wafer filled with the SiO2 substrate layer in an opposite mode, and removing the Si substrate layer and the SiO2 layer of the SOI wafer to obtain a SiO2 substrate wafer containing top silicon;
manufacturing a modulator waveguide on the top silicon of the SiO2 substrate wafer, and manufacturing an insulating medium layer and a through hole which penetrates through the insulating medium layer and contacts the heavily doped region of the modulator waveguide on the modulator waveguide;
and manufacturing electrodes in the through holes to form the connection between the modulator waveguide and the outside so as to finish the manufacture of the modulator.
On the other hand, the invention also provides a modulator structure which is prepared by adopting the modulator manufacturing method for forming the SiO2 substrate based on wafer bonding.
Compared with the prior art, the invention has the following beneficial effects:
according to the modulator manufacturing method and the modulator structure based on the SiO2 substrate formed by wafer bonding, the modulator is manufactured by adopting the SiO2 substrate, so that the matching of optical wave and microwave group velocity and the impedance matching of devices are realized, the microwave loss of the devices is reduced, and the application requirements of a high-speed modulator can be met; the manufacturing method is compatible with the existing CMOS process, can manufacture a modulator structure with more stable mechanical performance, and is suitable for large-scale manufacturing and commercialization.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a schematic structural diagram of an SOI wafer and a Si wafer according to an embodiment of the manufacturing method of the present invention;
FIG. 2 is a schematic structural diagram of a Si wafer after a first groove etching is completed in an embodiment of the manufacturing method of the invention;
FIG. 3 is a schematic structural diagram of a Si wafer after a SiO2 substrate layer is deposited in the embodiment of the manufacturing method of the invention;
FIG. 4 is a schematic structural diagram of a Si wafer after the SiO2 substrate layer is planarized in the embodiment of the manufacturing method of the invention;
FIG. 5 is a schematic structural diagram of an SOI wafer and a Si wafer after bonding in an embodiment of the manufacturing method of the present invention;
FIG. 6 is a schematic structural diagram of an SOI wafer with a Si substrate layer and a SiO2 layer removed in the embodiment of the manufacturing method of the invention;
FIG. 7 is a schematic diagram of a modulator waveguide after fabrication in an embodiment of a method of fabrication according to the present invention;
FIG. 8 is a schematic structural diagram of a SiO2 insulating layer after a via hole is etched and manufactured in an embodiment of the manufacturing method of the present invention;
FIG. 9 is a schematic structural diagram of a modulator after completion of electrode fabrication in an embodiment of the fabrication method of the present invention.
In the figure: 101. top layer silicon; 102. a layer of SiO 2; 103. a Si substrate layer; 201. si wafer; 202. a SiO2 substrate layer; 203. a modulator waveguide; 204. an SiO2 insulating layer; 205. a through hole; 206. and an electrode.
Detailed Description
The invention is further described in detail below with reference to the accompanying drawings, and specific embodiments are given.
Referring to fig. 1-9, according to an embodiment of the present invention, a method for manufacturing a modulator based on wafer bonding to form a SiO2 substrate includes the following steps:
1) providing an SOI wafer and a Si wafer 201 without an epitaxial layer, wherein the SOI wafer comprises top silicon 101, SiO2 layer 102 and Si substrate layer 103 from top to bottom, and cleaning the surfaces of the two wafers respectively to ensure that the surfaces of the two wafers are clean and flat, as shown in fig. 1 specifically; etching the surface of the Si wafer 201 at a position corresponding to a device to be manufactured of the Si wafer 201 to form a first groove, specifically referring to fig. 2; depositing a SiO2 substrate layer 202 on the Si wafer 201 with a first groove formed thereon, wherein the thickness of the SiO2 substrate layer 202 is required to ensure that the first groove is filled or a certain height is higher than the surface of the Si wafer 201 above the first groove, as shown in detail in FIG. 3; the SiO2 substrate layer 202 is planarized by a chemical mechanical polishing process to ensure that the exposed end of the SiO2 substrate layer 202 is flush with the surface of the Si wafer 201, or slightly higher/lower than the surface of the Si wafer 201, thereby forming a SiO2 substrate layer 202 filling the first groove of the Si wafer 201, as specifically shown in fig. 4.
2) Then, bonding the top silicon 101 side of the surface of the SOI wafer with the side of the Si wafer 201 filled with the SiO2 substrate layer 202 in an opposite-surface manner, so that the SOI wafer is bonded to the surface of the Si wafer 201 in an inverted manner, wherein the cleaning of the surface of the SOI wafer and the chemical mechanical polishing of the SiO2 substrate layer 202 of the Si wafer 201 are also performed to ensure that the surfaces of the two wafers are flat on the one hand, so as to achieve the optimal bonding effect, which is specifically shown in fig. 5; and removing the Si substrate layer 103 and the SiO2 layer 102 of the SOI wafer, and only leaving the top silicon 101 of the SOI wafer on the surface of the Si wafer 201 to complete the manufacture of the SiO2 substrate wafer, which is specifically shown in FIG. 6.
3) Fabricating a modulator waveguide 203 on the top silicon 101 of the SiO2 substrate wafer by a semiconductor process, as shown with particular reference to fig. 7; an insulating medium layer is manufactured on the modulator waveguide 203 to cover the modulator waveguide 203, and through holes 205 penetrating to a heavily doped region of the modulator waveguide 203 are manufactured on the insulating medium layer through a semiconductor patterning process, wherein the number of the through holes 205 is at least three, as shown in fig. 8.
4) Depositing a metal film on the through hole 205 and the insulating medium layer, ensuring that the metal film fills the through hole 205, and forming a metal electrode 206 on the metal film by a semiconductor patterning process to form a connection between the modulator waveguide 203 and the outside, thereby completing the manufacture of the modulator, which is specifically shown in fig. 9.
According to another embodiment of the invention, the method of making the modulator waveguide 203 comprises:
1) in the top silicon 101 area on the SiO2 substrate layer 202, a second groove with a certain depth is etched by a patterning process.
2) Multiple ion implantation and annealing processes are performed on the top silicon 101 having the second grooves, and waveguide arms are formed between the second grooves, the waveguide arms including two-level doped waveguide arms or three-level doped waveguide arms, so as to complete the fabrication of the modulator waveguide 203. The two-stage doped waveguide arm is mainly formed by a heavily doped region manufactured in the second groove and a lightly doped region between the second groove, wherein the heavily doped region comprises a P + + region and an N + + region, and can be obtained by injecting boron doping and phosphorus doping respectively; the lightly doped region comprises a P region and an N region which can be obtained by injecting boron doping and phosphorus doping respectively; the heavily doped region and the lightly doped region form different doped regions due to the difference of the ion implantation dosage and/or the ion implantation energy. And a medium doping region is further manufactured between the heavy doping region and the light doping region of the two-stage doping waveguide arm to form the three-stage doping waveguide arm, wherein the medium doping region comprises a P + region and an N + region, and the modulator waveguide 203 with different waveguide arms combined by the P + + region, the P region, the N + region and the N + + region is formed. The modulator waveguide 203 may be a mach-zehnder modulator waveguide, and includes two waveguide arms, where the waveguide arms may be sequentially formed by a P + + region, a P region, an N region, and an N + + region, or may be formed by other combinations of the above-mentioned doped regions; referring to fig. 7, the two waveguide arms may also be that the N + + region of the first waveguide arm is spaced from the P + + region of the second waveguide arm, or may also be that the P + + region of the first waveguide arm is connected to or spaced from the P + + region of the second waveguide arm, and the doping level and the ion implantation distribution may also be adjusted according to the specific device design.
It is to be noted that, in the process of manufacturing the modulator waveguide 203 according to the embodiment of the present invention, before the ion implantation process, a thin SiO2 film is grown on the top silicon 101 having the second groove to adjust the doping depth and reduce the damage of the top silicon 101, and then different doping regions are defined by multiple times of photolithography, and then the ion implantation and the subsequent processes are performed, which are also included in one embodiment of the present invention.
According to another embodiment of the present invention, the size and depth of the first groove are set according to the size of the microwave mode field, and it can be understood that those skilled in the art can customize the first groove according to the actual required size of the microwave mode field in the process of embodying the present invention.
According to another embodiment of the present invention, the Si substrate layer 103 and the SiO2 layer 102 of the SOI wafer are removed using a chemical mechanical polishing and wet etching process or other equivalent means.
According to another embodiment of the present invention, the metal electrode 206 is fabricated to include a signal electrode and two ground electrodes spaced apart from each other and disposed on two sides of the signal electrode, respectively, and the signal electrode and the ground electrodes cover a portion of the upper surface of the insulating medium layer.
According to another embodiment of the present invention, the insulating dielectric layer is made of SiO2 material to form the SiO2 insulating layer 204.
In one embodiment of the invention, the signal electrode is manufactured to be connected with the middle position of two waveguide arms of a waveguide of the Mach-Zehnder modulator, namely an N + + region of a first waveguide arm and a P + + region of a second waveguide arm; and manufacturing the ground electrodes to be respectively connected with the P + + region of the first waveguide arm and the N + + region of the second waveguide arm.
Referring to fig. 9, the invention further provides a modulator structure, which is prepared by the modulator manufacturing method for forming the SiO2 substrate based on wafer bonding.
According to the method for manufacturing the modulator with the SiO2 substrate formed on the basis of wafer bonding, the modulator is manufactured by adopting the SiO2 substrate with high resistance and low dielectric constant in a wafer bonding mode, so that the difference between the refractive indexes of light waves and microwaves is improved, the matching of the group velocity of the light waves and the microwaves and the impedance matching of a device can be realized, the microwave loss of the device is reduced, and the application requirement of a high-speed modulator can be met; meanwhile, the manufacturing method is compatible with the existing CMOS process, can manufacture the high-speed modulator with more stable mechanical performance, can realize non-airtight packaging, and is suitable for large-scale manufacturing and commercial application.
Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.
Claims (8)
1. A method for manufacturing a modulator based on wafer bonding to form a SiO2 substrate, comprising:
providing an SOI wafer and a Si wafer, manufacturing a first groove on one side of the Si wafer, and manufacturing an SiO2 substrate layer to fill the first groove;
bonding the top silicon side of the SOI wafer and the side surface of the Si wafer filled with the SiO2 substrate layer in an opposite mode, and removing the Si substrate layer and the SiO2 layer of the SOI wafer to obtain a SiO2 substrate wafer containing top silicon;
manufacturing a modulator waveguide on the top silicon of the SiO2 substrate wafer by a semiconductor process, and manufacturing an insulating medium layer and a through hole which penetrates through the insulating medium layer and contacts the heavily doped region of the modulator waveguide on the modulator waveguide;
and manufacturing electrodes in the through holes to form the connection between the modulator waveguide and the outside so as to finish the manufacture of the modulator.
2. The method of manufacturing of claim 1, wherein the method of manufacturing the modulator waveguide comprises:
1) etching a second groove with a certain depth in a top silicon area on the SiO2 substrate layer by using a patterning process;
2) and carrying out ion implantation and annealing process on the top silicon with the second grooves, and forming waveguide arms between the second grooves, wherein the waveguide arms comprise two-level doped waveguide arms or three-level doped waveguide arms so as to finish the manufacture of the modulator waveguide.
3. The method of claim 1 or 2, wherein the size and depth of the first groove are set according to the size of the microwave mode field.
4. The method as claimed in claim 1, wherein the SiO2 substrate layer is formed by chemical vapor deposition and chemical mechanical polishing.
5. The method of claim 1, wherein the method of removing the Si substrate layer and the SiO2 layer of the SOI wafer comprises one or a combination of chemical mechanical polishing and wet etching methods.
6. The method according to claim 1, wherein the number of the electrodes is at least three, and the electrodes include a signal electrode and two ground electrodes respectively disposed at two sides of the signal electrode.
7. The method of claim 1, wherein the insulating dielectric layer is a SiO2 insulating layer.
8. A modulator structure prepared by the method of manufacture of any one of claims 1 to 7.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112558217A (en) * | 2020-12-11 | 2021-03-26 | 中国科学院微电子研究所 | Electro-optical device and manufacturing method thereof |
| WO2022001567A1 (en) * | 2020-06-29 | 2022-01-06 | 苏州旭创科技有限公司 | Silicon-based traveling-wave electrode modulator |
| CN113934025A (en) * | 2020-06-29 | 2022-01-14 | 苏州旭创科技有限公司 | Silicon-based traveling wave electrode modulator and manufacturing method thereof |
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