CN108963752B - Electric driving laser based on annular photonic crystal nano beam resonant cavity - Google Patents
Electric driving laser based on annular photonic crystal nano beam resonant cavity Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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Abstract
The invention discloses an electric drive laser based on a circular photonic crystal nano-beam resonant cavity. The laser sequentially comprises a Si-based substrate and thermally oxidized SiO from bottom to top 2 Layer, si waveguide, BCB layer, siO 2 Layer, P-doped layer, active region, N-doped layer, siO 2 A coating layer; the Si-based substrate, the thermally oxidized SiO 2 The Si waveguides jointly form an SOI waveguide structure; the P doped layer, the active region and the N doped layer are etched into a nano beam resonant cavity altogether; the upper part of the P doped layer is plated with strip-shaped upper electrodes parallel to the Si waveguide on two sides of the nano beam resonant cavity, and the upper part of the nano beam resonant cavity is plated with lower electrodes along two ends of the Si waveguide direction. The invention uses the circular photon crystal nanometer beam as the resonant cavity of the laser, and improves the high-speed and low-energy consumption performance of the laser by further reducing the volume of the active area of the optical interconnection VCSEL.
Description
Technical Field
The invention belongs to the technical field of photoelectrons, and particularly relates to an electrically driven laser capable of further improving high-speed performance and low-energy consumption performance of an optical interconnection laser.
Background
Lasers are the core components of optical interconnects. How to obtain smaller volume, higher modulation speed and lower power consumption lasers is a key technology developed in this field. The current high-speed low-energy-consumption lasers are mainly Vertical Cavity Surface Emitting Lasers (VCSELs) and are applied to large data centers, server clusters and short-distance optical interconnections of super computers in the multi-billion scale. Currently, the data transmission rate of 850 nm-VCSEL reaches 25 Gb/s and 28 Gb/s on single-channel Ethernet and fiber channel; the 71 Gbit/s error-free transmission realized in 2015 is the highest transmission speed of the current laser, but the transmission energy consumption is too high due to high driving current.
According to evaluation and prediction of an international semiconductor technology development roadmap (ITRS), the energy consumption of a communication light source is reduced by 100 fJ/bit to maintain the economic and ecological feasibility of the Internet and cloud computing service. The current high-speed VCSEL with the lowest energy consumption is the energy consumption of 95-fJ/bit required when the 850 nm-VCSEL performs 50 Gb/s error-free transmission at room temperature. In a high temperature operating environment at 85 ℃, the lowest power consumption high speed 980 nm-VCSEL is 139 fJ/bit required for 35 Gb/s error-free transmission.
The use of lasers for optical interconnects on silicon-based chips (on-chip) requires the feature dimensions of the lasers to be close to those of the electronics and less power consumption than the mature electrical interconnects, on the order of about 10 fJ/bit. The power consumption of a laser is directly related to its dimensions, with power consumption on the order of 10 fJ/bit directly requiring the mode volume of the laser to be smaller, a VCSEL clearly cannot meet this requirement.
Thus, research on how to further reduce the volume of the active region to improve the performance of the laser is of great importance for short-range data transmission. The photonic crystal is formed by periodically arranging dielectrics with different dielectric constants, photons can be effectively regulated and controlled on the micro-nano scale, and the formed resonant cavity has the advantages of high quality factor, small mode volume, easiness in integration and the like, and has been applied to the fields of ultra-low threshold lasers, nonlinear optics, quantum optics and the like. The photonic crystal microcavity laser has high Purcell factor, the spontaneous radiation coupling coefficient is improved, the high spontaneous radiation coupling coefficient can obviously reduce the threshold value of the laser, and the relaxation oscillation frequency can be increased, so that the modulation bandwidth is increased, and the modulation performance and the dynamic energy consumption performance are improved. Therefore, the photonic crystal micro-nano cavity laser is an effective way for realizing low threshold and low energy consumption.
Disclosure of Invention
The invention aims to provide a photonic crystal nano Liang Jiguang device structure capable of further improving the high-speed and low-energy consumption performance of an optical interconnection laser so as to make up for the defects of the prior art.
The invention breaks through the bandwidth limitation of the high-speed modulation performance of the laser by the thermal limitation, the damping limitation and the limitation of relaxation oscillation frequency, and the laser breaks through the bandwidth limitation of the photonic crystal nano-beam structure, the quantum well structure of the InP-based heteroepitaxial structure and the electric injection structure.
The working principle of the invention is as follows:
the prior nano beam cavity for the microcavity laser adopts a round hole-shaped photonic crystal nano beam cavity, and based on the progress of the micro-nano process, the circular ring-shaped photonic crystal nano beam cavity with a slightly complex structure can provide a higher Q value and a smaller mode volume V. The circular photonic crystal nanobeam cavity is provided with a circular hole on the symmetry axis and a circular hole on two sides of the symmetry axis, the structure can be divided into a gradual change area and a mirror image area, the radius of the circular ring of the gradual change area changes regularly, and the radius of the circular ring of the mirror image area remains unchanged. The nano beam cavities with the two structures have high quality factors and smaller mode volumes, and the resonant cavity suitable for the high-speed low-energy-consumption photonic crystal nano Liang Jiguang device is designed by combining a rate equation and high-speed modulation theory optimization parameters. Compared with the semiconductor resonant cavity adopted by the VCSEL of the current optical interconnection light source, the high-quality one-dimensional photonic crystal nano-beam structure is adopted as the resonant cavity, so that a higher quality factor and smaller mode volume can be provided, and a micro-nano cavity laser with lower threshold value, higher modulation rate and lower dynamic energy consumption than the VCSEL can be realized.
Meanwhile, the invention provides a current injection structure on two sides of a plane, which is favorable for high-speed work and high-efficiency current injection of a laser, electrons are injected at two ends of a beam by utilizing the characteristic that electron mobility and hole mobility are different, and holes are injected at two sides of the beam, so that the p-i-n electric injection structure suitable for the high-speed laser can lead more carriers to pass through a nano beam cavity area and participate in radiation composite luminescence.
In addition, the invention adopts the scheme of wafer bonding and coating with low refractive index dielectric material, and the nano beam cavity is arranged on the upper part of the SOI waveguide, and the BCB layer and the SiO layer are used between the SOI waveguide and the nano beam cavity 2 The layers are separated, the structure can realize evanescent wave coupling, and meanwhile, the whole structure uses SiO 2 The coating can reduce thermal resistance, improve thermal performance, solve the problem of heat dissipation, and protect the structure from the influence of external environment.
Based on the principle, and in order to achieve the purposes, the invention adopts the following specific technical scheme:
an electrically driven laser based on a resonant cavity of a circular photonic crystal nano-beam sequentially comprisesComprising a Si-based substrate, thermally oxidized SiO 2 Layer, si waveguide, BCB layer, siO 2 Layer, P-doped layer, active region, N-doped layer, siO 2 A coating layer; wherein the Si-based substrate, the thermally oxidized SiO 2 The Si waveguides jointly form an SOI waveguide structure; the P doped layer, the active region and the N doped layer are etched into a nano beam resonant cavity altogether; the upper part of the P doped layer is plated with strip-shaped upper electrodes parallel to the Si waveguide on two sides of the nano beam resonant cavity, and the upper part of the nano beam resonant cavity is plated with lower electrodes along two ends of the Si waveguide direction; the nano beam resonant cavity is arranged on the upper part of the SOI waveguide structure and passes through the BCB layer and the SiO 2 Separating layers; double-mesa filling SiO composed of nano-beam resonant cavity and SOI structure 2 And the coating layer is etched by ICP to open an electrode window, and the GSG-Pad electrode is evaporated by the E-Beam to realize a coplanar electrode structure.
Further, the SOI waveguide structure is prepared by adopting a CMOS process: firstly cleaning and drying the cleaved SOI wafer, and thermally oxidizing SiO 2 And (3) preparing a pattern by using electron beam exposure, and transferring the mask pattern to the silicon layer by using ICP dry etching.
Furthermore, the nano beam resonant cavity is an NIP structure which is formed by peeling an InP substrate by wet etching, is a III-V semiconductor material, and is a series of nano beam resonant cavities etched by dry etching and other processes.
Further, the nano beam resonant cavity structure is positioned on a symmetry axis and can be divided into a gradual change region of the nano beam cavity and a mirror image region of the nano beam cavity, the radius of a circular ring of the gradual change region changes regularly, and the radius of the circular ring of the mirror image region remains unchanged, so that the nano beam resonant cavity of the structure has higher quality factor and smaller mode volume; the ring is provided with a ring inner diameter and a ring outer diameter.
Further, the SOI waveguide structure and the nano beam resonant cavity pass through the BCB layer and the SiO 2 Intermediate layer bonding, the vertical coupling of the nano beam resonant cavity and the SOI waveguide structure below, realizing the directional output of light, and optimizing the waveguide width and SiO 2 The thickness optimizes the performance of the structure.
Further, the SOI waveguide structure, the BCB layer and the SiO 2 The layers are the same in size, and the size of the resonant cavity of the nano beam is smaller than that of the SOI waveguide structure.
Furthermore, the dimensions of layers of the nano beam resonant cavity are slightly different, the P doped layer is slightly smaller than the SOI waveguide structure in width and larger than the active region and the N doped layer, and the dimensions of the layers are the same in length.
Further, the SiO 2 The cladding layer is a low refractive index material to solve the heat dissipation problem and improve the thermal performance of the device.
Furthermore, the upper electrode and the lower electrode realize good ohmic contact by optimizing electrode sputtering conditions, alloy components and rapid thermal annealing conditions, so that contact resistance is reduced, cut-off bandwidth is increased, and modulation bandwidth of a laser is improved.
The invention has the advantages and beneficial effects that:
the invention uses the circular photon crystal nanometer beam as the resonant cavity of the laser, and improves the high-speed and low-energy consumption performance of the laser by further reducing the volume of the active area of the optical interconnection VCSEL.
The novel nano beam cavity laser point injection structure for injecting electrons at two ends of the nano beam resonant cavity and injecting holes at two sides of the beam utilizes different migration rates of the electrons and the holes as coplanar electrodes, thereby being beneficial to realizing high modulation rate and adopting wafer bonding and low-refractive-index dielectric material SiO at the same time 2 The coating scheme solves the problem of thermal insulation of an air bridge electric injection structure adopted by most of the existing photonic crystal nano lasers, and improves the modulation bandwidth by solving the thermal limitation. BCB layer bonding is compared to direct bonding and SiO 2 The bonding process of the middle layer is low in difficulty, good bonding interface flatness and fewer interface vacancies can be maintained, the bonding interface is completely compatible with the CMOS process of Si materials, and the nano beam cavity is used as a laser resonant cavity, so that high Q value and low die area are realized, parasitic parameters are optimized, the Q value is improved, and high modulation bandwidth is realized.
The invention can provide higher quality factor and smaller mode volume than VCSEL, and can realize lower threshold value, higher modulation speed and lower dynamic energy consumption than VCSEL. The improvement of the modulation bandwidth of the high-speed low-energy-consumption VCSEL is limited by parasitic bandwidth and the structure of the VCSEL, and the invention overcomes the problems of the VCSEL.
Compared with a two-dimensional photonic crystal microcavity, the invention has the advantages that the p-i-n junction is easier to realize for the electric injection light-emitting device, more carriers participate in radiation compound luminescence through the nano beam cavity, the laser is smaller in size and higher in integration level, and the laser is easy to integrate with a silicon nano waveguide and other functional photonic devices.
In addition, the invention is hopeful to obtain a high-speed electrically-driven photonic crystal nano-beam laser technology, realizes a one-dimensional photonic crystal laser with high speed, low threshold value and low energy consumption, is beneficial to solving the problem that a high-speed low-energy-consumption light source is lacking in the field of silicon substrate polishing interconnection, and has important significance for realizing high-efficiency and low-cost interconnection.
Drawings
Fig. 1 is a schematic view of the whole cross-sectional structure of the present invention.
Fig. 2 is a schematic plan view of a resonant cavity of the circular photonic crystal nanobeam of the present invention.
Wherein the 1-Si-based substrate, the 2-thermally oxidized SiO 2 Layer, 3-Si waveguide, 4-BCB layer, 5-SiO 2 Layer, 6-P doped layer, 7-active region, 8-N doped region, 9-SiO 2 The coating layer, the 10-lower electrode, the 11-upper electrode, the 12-gradual change region of the nano beam cavity, the 13-mirror image region of the nano beam cavity, the 14-inner diameter of the circular ring and the 15-outer diameter of the circular ring.
Detailed Description
The invention is further illustrated and described below by means of specific embodiments in conjunction with the accompanying drawings.
Examples:
as shown in figure 1, an electrically driven laser based on a circular photonic crystal nanobeam resonant cavity sequentially comprises a Si-based substrate 1 and thermally oxidized SiO from bottom to top 2 Layer 2, si waveguide 3, BCB layer 4, siO 2 Layer 5, P-doped layer 6, active region 7, N-doped layer 8, siO 2 A coating layer 9; wherein the Si-based substrate 1, the thermally oxidized SiO 2 2. The Si waveguides 3 together form an SOI waveguide structure; the P doped layer 6, the active region 7 and the N doped layer 8 are etched to form a nano beam resonant cavity; the upper part of the P doped layer 6 is arranged on the nano beamStrip-shaped upper electrodes 11 parallel to the Si waveguide 3 are plated on two sides of the resonant cavity, and lower electrodes 10 are plated on two ends of the upper part of the nano beam resonant cavity along the direction of the Si waveguide 3; the nano beam resonant cavity is arranged on the upper part of the SOI waveguide 3 structure and passes through the BCB layer 4 and the SiO 2 The layers 5 are spaced apart; double-mesa filling SiO composed of nano beam resonant cavity and SOI waveguide structure 2 And the coating layer 9 is etched by ICP to form an electrode window, and the GSG-Pad electrode is evaporated by E-Beam to realize a coplanar electrode structure. The SiO is 2 The cladding layer is a low refractive index material to solve the heat dissipation problem and improve the thermal performance of the device. The upper electrode 11 and the lower electrode 10 realize good ohmic contact by optimizing electrode sputtering conditions, alloy components and rapid thermal annealing conditions, so that contact resistance is reduced, cut-off bandwidth is increased, and modulation bandwidth of a laser is improved.
The SOI waveguide structure is prepared by adopting a CMOS process: firstly cleaning and drying the cleaved SOI wafer, and thermally oxidizing SiO 2 And a layer 5, wherein a pattern is prepared by using electron beam exposure, and then the mask pattern is transferred to the silicon layer by using ICP dry etching.
The nano beam resonant cavity is an NIP structure for stripping an InP substrate by wet etching, is a III-V semiconductor material, and is a series of nano beam resonant cavities etched by dry etching and other processes; the size of each layer of the nano beam resonant cavity is slightly different, the P doped layer is slightly smaller than the SOI waveguide structure in width and larger than the active region 7 and the N doped layer 8, and the sizes of the layers are the same in length.
As shown in fig. 2, the nano-beam resonant cavity structure is located on a symmetry axis and can be divided into a gradual change region 12 of the nano-beam cavity and a mirror image region 13 of the nano-beam cavity, wherein the radius of a circular ring of the gradual change region 12 of the nano-beam cavity is regularly changed, and the radius of the circular ring of the mirror image region 13 of the nano-beam cavity is kept unchanged, so that the nano-beam resonant cavity of the structure has a higher quality factor and a smaller mode volume; the ring is provided with a ring inner diameter 14 and a ring outer diameter 15.
The SOI waveguide structure and the nano beam resonant cavity pass through the BCB layer and the SiO 2 Intermediate layer bonding, the vertical coupling of the nano beam resonant cavity and the SOI waveguide structure below, realizing the directional output of light, and optimizing the width of the SOI waveguide structure and SiO 2 The thickness optimizes the performance of the structure; the SOI waveguide structure and the BCB layer 4, siO 2 The layer 5 has the same size, and the size of the resonant cavity of the nano beam is smaller than that of the SOI waveguide structure.
Claims (8)
1. An electric drive laser based on a circular photonic crystal nano-beam resonant cavity is characterized by sequentially comprising a Si-based substrate (1) and thermally oxidized SiO from bottom to top 2 Layer (2), si waveguide (3), BCB layer (4), siO 2 A layer (5), a P doped layer (6), an active region (7), an N doped layer (8), siO 2 A coating layer (9); wherein the Si-based substrate (1), the thermally oxidized SiO 2 (2) The Si waveguides (3) together form an SOI waveguide structure; the P doped layer (6), the active region (7) and the N doped layer (8) are co-etched to form a nano-beam resonant cavity; the upper part of the P doped layer (6) is plated with strip-shaped upper electrodes (11) parallel to the Si waveguide (3) at two sides of the nano beam resonant cavity, and the upper part of the nano beam resonant cavity is plated with lower electrodes (10) at two ends along the direction of the Si waveguide (3); the nano beam resonant cavity is arranged at the upper part of the SOI waveguide structure and passes through the BCB layer (4) and the SiO 2 The layers (5) are spaced apart; double-mesa filling SiO composed of nano beam resonant cavity and SOI waveguide structure 2 A coating layer (9); the nano beam resonant cavities are a series of nano beam resonant cavities etched by a dry etching process by utilizing a NIP structure of an InP substrate which is stripped by wet etching; the nano beam resonant cavity structure is positioned on a symmetry axis and is divided into a gradual change region (12) of the nano beam cavity and a mirror image region (13) of the nano beam cavity, the radius of a circular ring of the gradual change region (12) of the nano beam cavity is changed regularly, and the radius of the circular ring of the mirror image region (13) of the nano beam cavity is kept unchanged; the ring is provided with a ring inner diameter (14) and a ring outer diameter (15).
2. An electrically driven laser as claimed in claim 1 wherein the laser utilizes ICP etching to open an electrode window to vapor deposit GSG-Pad electrodes by E-Beam to achieve a coplanar electrode structure.
3. As in claim 1The electrically driven laser is characterized in that the SOI waveguide structure is prepared by adopting a CMOS process: firstly cleaning and drying the cleaved SOI wafer, and thermally oxidizing SiO 2 And (3) preparing a pattern by using electron beam exposure, and transferring the mask pattern to the silicon layer by using ICP dry etching.
4. The electrically driven laser of claim 1, wherein the SOI waveguide structure and nanobeam cavity pass through a BCB layer and SiO 2 And the middle layer is bonded, and the nano beam resonant cavity is vertically coupled with the SOI waveguide structure below, so that the directional output of light is realized.
5. The electrically driven laser according to claim 1, wherein the SOI waveguide structure is combined with a BCB layer (4), siO 2 The size of the layer (5) is the same, and the size of the resonant cavity of the nano beam is smaller than that of the SOI waveguide structure.
6. An electrically driven laser as claimed in claim 1 wherein the layers of the nanobeam cavity are of different dimensions, the P-doped layer being smaller in width than the SOI waveguide structure, larger than the active region (7) and the N-doped layer (8), and the layers being of the same dimensions in length.
7. The electrically driven laser of claim 1, wherein the SiO 2 The cladding layer (9) is a low refractive index material.
8. The electrically driven laser of claim 1, wherein the upper electrode (11) and the lower electrode (10) are ohmic contacted by optimizing electrode sputtering conditions, alloy compositions, and rapid thermal annealing conditions to reduce contact resistance to increase cut-off bandwidth and to increase modulation bandwidth of the laser.
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| CN109888611B (en) * | 2019-03-18 | 2021-06-01 | 南京邮电大学 | Nitride micro-laser with electrically-driven nano-beam structure and preparation method thereof |
| CN110176718B (en) * | 2019-06-19 | 2021-02-02 | 中国科学院半导体研究所 | Hybrid integrated laser chip structure based on high-order transverse mode waveguide output |
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