CN208890094U - Electric drive laser based on circular ring shape photonic crystal nanometer beam resonant cavity - Google Patents
Electric drive laser based on circular ring shape photonic crystal nanometer beam resonant cavity Download PDFInfo
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- CN208890094U CN208890094U CN201821579352.7U CN201821579352U CN208890094U CN 208890094 U CN208890094 U CN 208890094U CN 201821579352 U CN201821579352 U CN 201821579352U CN 208890094 U CN208890094 U CN 208890094U
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- 229910052681 coesite Inorganic materials 0.000 claims abstract description 35
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- 239000000377 silicon dioxide Substances 0.000 claims abstract description 35
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 35
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Abstract
The utility model discloses a kind of electric drive lasers based on circular ring shape photonic crystal nanometer beam resonant cavity.The laser successively includes Si base substrate, thermal oxide SiO from the bottom to top2Layer, Si waveguide, bcb layer, SiO2Layer, P doped layer, active area, N doped layer, SiO2Clad；The Si base substrate, the thermal oxide SiO2, the Si waveguide collectively form SOI waveguiding structure；The P doped layer, the active area, the N doped layer carve nano beam resonant cavity altogether；P doped layer top is coated with the strip top electrode parallel with Si waveguide in nano beam resonant cavity two sides, and nano beam resonant cavity top is coated with lower electrode along Si wave guide direction both ends.The utility model is using circular ring shape photonic crystal nanometer beam as the resonant cavity of laser, by further decreasing light network VCSEL the active volume to improve laser high speed and low energy consumption performance.
Description
Technical field
The utility model belongs to photoelectron technical field, and in particular to one kind further increases light network laser high speed
It can be with the electric drive laser of low energy consumption performance.
Background technique
Laser is the core element of light network.How smaller volume, more high modulation speeds and more low energy consumption are obtained
Laser is the key technology of field development.The laser of high speed low energy consumption at present is mainly vertical cavity surface emitting laser
(VCSEL), applied to large data center, server cluster and peta-scale supercomputer short distance light network
In.Current 850 nm-VCSEL data transmission rate has reached 25 Gb/s and 28 Gb/ on single channel Ethernet and optical-fibre channel
s；71 Gbit/s realized in 2015 passed without error code be current laser highest transmission speed, but because high driving current is led
Cause transmission energy consumption excessively high.
According to the assessment and prediction of International Semiconductor Technology Development Roadmap (ITRS), the energy consumption for communicating light source will reduce
~ 100 fJ/bit could maintain the economic ecology feasibility of internet and cloud computing service.The high speed VCSEL of lowest energy consumption at present
It is that 850 nm-VCSEL carry out energy consumption ~ 95 fJ/bit required when 50 Gb/s error free transmission at room temperature.In 85 °C of height
Under warm working environment, the 980 nm-VCSEL of high speed of lowest energy consumption is 139 fJ/bit needed for 35 Gb/s error free transmissions.
And laser application of (on-chip) light network on silicon base chip just directly requires the characteristic dimension of laser
Close to electronic device, and energy consumption is less than mature electrical interconnection, it is desirable that energy consumption is about in 10 fJ/bit magnitudes.Laser
The relationship that energy consumption and its scale are positively correlated, the energy consumption of 10 fJ/bit magnitudes directly require the mode volume of laser to be less than,
VCSEL is obviously no longer satisfied this requirement.
Therefore, the active volume how is further decreased to improve the research of laser performance to short range data transmission and have
It is significant.Photonic crystal is formed by the dielectric periodic arrangement of differing dielectric constant, can be had on micro-nano-scale
The regulation photon of effect, the resonant cavity of composition have many advantages, such as that quality factor is high, mode volume is small, is easily integrated, have been applied to
In the fields such as ultralow threshold value laser, nonlinear optics, quantum optices.Photonic crystal microcavity laser has high Purcell
The factor, the spontaneous radiation coefficient of coup are improved, and laser threshold can be significantly reduced in the high spontaneous radiation coefficient of coup, and
Relaxation oscillation frequency can be increased, so that increasing modulation bandwidth improves modulating performance and dynamic energy consumption performance.Therefore photonic crystal
Micro-nano cavity laser is a kind of effective means for realizing Low threshold low energy consumption.
Summary of the invention
It can be further improved light network laser high speed and low energy consumption performance the purpose of the utility model is to provide a kind of
Photonic crystal nanometer beam laser structure, to make up the deficiencies in the prior art.
The utility model is for the High Speed Modulation performance of laser, and modulation bandwidth receives heat limitation, damping limits and speeds
The limitation of Henan frequency of oscillation, the laser in the present invention is from photonic crystal nanometer girder construction, the quantum of InP-base heteroepitaxial structure
Three aspects of well structure and electric filling structure break through bandwidth limitation.
Working principle of the utility model is:
What the nano beam chamber currently used for micro-cavity laser used is all circle hole shape photonic crystal nanometer beam chamber, is based on micro-nano
The progress of technique, the slightly complicated circular ring shape photonic crystal nanometer beam chamber of structure are capable of providing higher Q value and smaller mode
Volume V.Circular ring shape photonic crystal nanometer beam chamber has circular hole on symmetry axis and circular hole is two kinds of symmetry axis two sides, and structure can divide
For transition region and MIRROR SITE, in regularity variation, the radius of MIRROR SITE annulus remains unchanged the annular radii of transition region.Both
The nano beam chamber of structure all has high quality factor and lesser model volume, association rate equation and High Speed Modulation theoretical optimization
Parameter designing goes out to be suitable for the resonant cavity of high speed low energy consumption photonic crystal nanometer beam laser.It is brilliant using the one-dimensional photon of high-quality
Body nano beam structure is capable of providing higher as resonant cavity compared to the semiconductor resonant cavity that current light network light source VCSEL is used
Quality factor and more small mode volume, it can be achieved that than VCSEL more Low threshold, more high modulation rate, lower dynamic energy consumption micro-nano
Cavity laser.
Meanwhile the utility model proposes the current injection structures of plane bilateral, are conducive to laser high speed operation and height
Electric current injection is imitated, using the electron mobility feature different with hole mobility, injects electronics at beam both ends, the injection of beam two sides is empty
P-i-n the electric filling structure suitable for high-speed laser in cave, the structure proposed can make more carriers by receiving
Rice beam cavity region participates in radiation recombination and shines.
In addition, the scheme that the utility model is coated using wafer bonding and low index dielectric material, by by nanometer
Beam chamber is placed in SOI waveguide top, and bcb layer and SiO are used between SOI waveguide and nano beam chamber2Layer separates, this structure can be real
Existing evanescent wave coupling, meanwhile, total SiO2Cladding, which can reduce thermal resistance, improves hot property, solves the same of heat dissipation problem
When, structure can also be protected free from the influence of the external environment.
Based on the principle, and in order to achieve the above objectives, it is that the utility model is taken the specific technical proposal is:
A kind of electric drive laser based on circular ring shape photonic crystal nanometer beam resonant cavity, the laser is from the bottom to top successively
Including Si base substrate, thermal oxide SiO2Layer, Si waveguide, bcb layer, SiO2Layer, P doped layer, active area, N doped layer, SiO2Cladding
Layer；Wherein, the Si base substrate, the thermal oxide SiO2, the Si waveguide collectively form SOI waveguiding structure；The P doping
Layer, the active area, the N doped layer carve nano beam resonant cavity altogether；P doped layer top is in nano beam resonant cavity two sides
It is coated with the strip top electrode parallel with Si waveguide, nano beam resonant cavity top is coated with lower electrode along Si wave guide direction both ends；
The nano beam resonant cavity is placed in SOI waveguiding structure top and by bcb layer and SiO2Layer separates；The nano beam resonant cavity and
Fill SiO in the dual stage face of soi structure composition2GSG-Pad is deposited by E-Beam using the etched open electrode window through ray of ICP in clad
Electrode, to realize coplanar-electrode structure.
Further, the SOI waveguiding structure is prepared using CMOS technology: first by the SOI piece cleaning, drying after cleavage, heat
Aoxidize SiO2Layer prepares figure using electron beam exposure, recycles ICP dry etching that mask pattern is transferred to silicon layer.
Further, the nano beam resonant cavity is exactly using the NIP structure of wet etching removing InP substrate, this is one
III-V race's semiconductor material of kind, a series of nano beam resonant cavities carved using techniques such as dry etchings.
Further, the nano beam cavity resonator structure is located on symmetry axis, can be divided into the transition region of nano beam chamber and receive
The MIRROR SITE of rice beam chamber, transition region annular radii are remained unchanged in regularity variation, MIRROR SITE annular radii, this structure is received
Rice beam resonant cavity quality factor with higher and lesser mode volume；Annulus is equipped with internal radius and annulus outer diameter.
Further, the SOI waveguiding structure and nano beam resonant cavity pass through bcb layer and SiO2Intermediate Layer Bonding, nanometer
Beam resonant cavity and the SOI waveguiding structure of lower section are vertical coupled, realize the orientation output of light, can pass through optimization duct width and SiO2
The performance of thickness optimization structure.
Further, the SOI waveguiding structure and bcb layer, SiO2Layer size is identical, and nano beam resonant cavity size is less than
SOI waveguiding structure.
Further, each layer size of the nano beam resonant cavity is slightly different, and P doped layer is slightly less than SOI wave on the width
Guide structure is greater than active area and N doped layer, and each layer size is all the same in length.
Further, the SiO2Clad is low-index material, to solve heat dissipation problem, improves the hot of device
Energy.
Further, the upper and lower electrode passes through optimization electrode sputtering condition, alloy compositions and rapid thermal annealing condition
The Ohmic contact realized increases cut off band width to reduce contact resistance, improves the modulation bandwidth of laser.
The advantages of the utility model and the utility model has the advantages that
The utility model is using circular ring shape photonic crystal nanometer beam as the resonant cavity of laser, by further decreasing light
Interconnection VCSEL the active volume is to improve laser high speed and low energy consumption performance.
The utility model injects electronics at nano beam resonant cavity both ends, and the novel nano beam chamber laser in hole is injected in beam two sides
Device point injecting structure, it is different using electrons and holes migration rate, and as coplanar electrodes, help to realize High Speed Modulation speed
Rate, while using wafer bonding and low index dielectric material SiO2The scheme of cladding solves current most of photonic crystals
There are thermal insulation problems for the air bridges electric filling structure that nano laser uses, and improve modulation bandwidth by solving heat limitation.BCB
Layer bonding is compared to Direct Bonding and SiO2Intermediate Layer Bonding technology difficulty is low, be able to maintain preferable bonded interface flatness and compared with
Few interface vacancy, and it is completely compatible with the CMOS technology of Si material, and nano beam chamber is to realize height as laser resonant cavity
Q value and low model volume optimize parasitic parameter, propose high q-factor, realize high modulation bandwidth.
The utility model is capable of providing the higher quality factor and more small mode volume compared to VCSEL, may be implemented to compare VCSEL
More Low threshold, more high modulation speeds, lower dynamic energy consumption.The raising of the modulation bandwidth of high speed low energy consumption VCSEL is by parasitic bandwidth
With the limitation of this body structure, and the present invention overcomes VCSEL there are the problem of.
The utility model is compared to two-dimensional photonic crystal microcavity, it is easier to realize p-i-n junction to make electrical pumping luminescent device,
More carriers participate in radiation recombination by nano beam chamber and shine, and the laser dimensions are smaller, and integrated level is higher, is easy to
It is integrated with the waveguide of silicon nanometer and other functional photonic devices.
In addition, the utility model be expected to obtain high speed electric drive photonic crystal nanometer beam laser technique, realize high speed, it is low
Threshold value, low power consuming 1-D photon crystal laser, help to solve optical interconnection field on silicon chip and lack high speed low energy and deplete
The problem of source, is of great significance to the interconnection for realizing efficient, inexpensive.
Detailed description of the invention
Fig. 1 is the whole the schematic diagram of the section structure of the utility model.
Fig. 2 is the floor map of the circular ring shape photonic crystal nanometer beam resonant cavity of the utility model.
Wherein, 1- Si base substrate, 2- thermal oxide SiO2Layer, 3-Si waveguide, 4- bcb layer, 5-SiO2Layer, 6-P doped layer,
7- active area, 8-N doped region, 9-SiO2Clad, electrode under 10-, 11- top electrode, the transition region of 12- nano beam chamber, 13- receive
The MIRROR SITE of rice beam chamber, 14- internal radius, 15- annulus outer diameter.
Specific embodiment
The utility model is explained further and is illustrated below by way of specific embodiment and in conjunction with attached drawing.
Embodiment:
As shown in Figure 1, a kind of electric drive laser based on circular ring shape photonic crystal nanometer beam resonant cavity, the laser by
Under it is supreme successively include Si base substrate 1, thermal oxide SiO2Layer 2, Si waveguide 3, bcb layer 4, SiO2Layer 5, P doped layer 6, active area 7,
N doped layer 8, SiO2Clad 9；Wherein, the Si base substrate 1, the thermal oxide SiO22, the Si waveguide 3 collectively forms SOI
Waveguiding structure；The P doped layer 6, the active area 7, the N doped layer 8 carve nano beam resonant cavity altogether；The P doped layer 6
Top is coated with the strip top electrode 11 parallel with Si waveguide 3, nano beam resonant cavity top edge in nano beam resonant cavity two sides
3 direction both ends of Si waveguide are coated with lower electrode 10；The nano beam resonant cavity is placed in 3 structure upper of SOI waveguide and by bcb layer 4
And SiO2Layer 5 separates；SiO is filled in the dual stage face of the nano beam resonant cavity and SOI waveguiding structure composition2Clad 9, utilizes ICP
GSG-Pad electrode is deposited by E-Beam, to realize coplanar-electrode structure in etched open electrode window through ray.The SiO2Clad is
Low-index material improves the hot property of device to solve heat dissipation problem.The top electrode 11, lower electrode 10 pass through optimization
The Ohmic contact that electrode sputtering condition, alloy compositions and rapid thermal annealing condition have been realized is cut with reducing contact resistance increase
Stop-band is wide, improves the modulation bandwidth of laser.
The SOI waveguiding structure is prepared using CMOS technology: first by the SOI piece cleaning, drying after cleavage, thermal oxide SiO2
Layer 5 prepares figure using electron beam exposure, recycles ICP dry etching that mask pattern is transferred to silicon layer.
The nano beam resonant cavity is exactly using the NIP structure of wet etching removing InP substrate, this is a kind of III-V race
Semiconductor material, a series of nano beam resonant cavities carved using techniques such as dry etchings；Each layer ruler of nano beam resonant cavity
Very little to be slightly different, P doped layer is slightly less than SOI waveguiding structure on the width, is greater than active area 7 and N doped layer 8, each in length
Layer size is all the same.
As shown in Fig. 2, the nano beam cavity resonator structure is located on symmetry axis, 12 He of transition region of nano beam chamber can be divided into
The MIRROR SITE 13 of nano beam chamber, 12 annular radii of transition region of nano beam chamber is in regularity variation, the MIRROR SITE 13 of nano beam chamber
Annular radii remains unchanged, the nano beam resonant cavity quality factor with higher of the structure and lesser mode volume；Annulus
Equipped with internal radius 14 and annulus outer diameter 15.
The SOI waveguiding structure and nano beam resonant cavity pass through bcb layer and SiO2Intermediate Layer Bonding, nano beam resonator
It is vertical coupled with the SOI waveguiding structure of lower section, it realizes the orientation output of light, optimization SOI waveguiding structure width and SiO can be passed through2
The performance of thickness optimization structure；The SOI waveguiding structure and bcb layer 4, SiO25 size of layer are identical, and nano beam resonant cavity size is small
In SOI waveguiding structure.
Claims (4)
1. a kind of electric drive laser based on circular ring shape photonic crystal nanometer beam resonant cavity, which is characterized in that the laser by
Under it is supreme successively include Si base substrate (1), thermal oxide SiO2Layer (2), Si waveguide (3), bcb layer (4), SiO2Layer (5), P doped layer
(6), active area (7), N doped layer (8), SiO2Clad (9)；Wherein, the Si base substrate (1), the thermal oxide SiO2Layer
(2), the Si waveguide (3) collectively forms SOI waveguiding structure；The P doped layer (6), the active area (7), the N doped layer
(8) nano beam resonant cavity is carved altogether；P doped layer (6) top is coated with parallel with Si waveguide (3) in nano beam resonant cavity two sides
Strip top electrode (11), nano beam resonant cavity top is coated with lower electrode (10) along Si waveguide (3) direction both ends；It is described to receive
Rice beam resonant cavity is placed in the top of SOI waveguiding structure and by bcb layer (4) and SiO2Layer (5) separates；The nano beam resonant cavity
SiO is filled with the dual stage face of SOI waveguiding structure composition2Clad (9).
2. electric drive laser as described in claim 1, which is characterized in that the nano beam cavity resonator structure is located at symmetry axis
On, it is divided into the transition region (12) of nano beam chamber and the MIRROR SITE (13) of nano beam chamber, transition region (12) annulus half of nano beam chamber
Diameter is remained unchanged in regularity variation, MIRROR SITE (13) annular radii of nano beam chamber；Annulus is equipped with internal radius (14) and circle
Ring outer diameter (15).
3. electric drive laser as described in claim 1, which is characterized in that the SOI waveguiding structure and nano beam resonant cavity
Pass through bcb layer and SiO2The SOI waveguiding structure of Intermediate Layer Bonding, nano beam resonant cavity and lower section is vertical coupled.
4. electric drive laser as described in claim 1, which is characterized in that the SOI waveguiding structure and bcb layer (4), SiO2
Layer (5) size is identical, and nano beam resonant cavity size is less than SOI waveguiding structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821579352.7U CN208890094U (en) | 2018-09-27 | 2018-09-27 | Electric drive laser based on circular ring shape photonic crystal nanometer beam resonant cavity |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108963752A (en) * | 2018-09-27 | 2018-12-07 | 青岛科技大学 | Electric drive laser based on circular ring shape photonic crystal nanometer beam resonant cavity |
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- 2018-09-27 CN CN201821579352.7U patent/CN208890094U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108963752A (en) * | 2018-09-27 | 2018-12-07 | 青岛科技大学 | Electric drive laser based on circular ring shape photonic crystal nanometer beam resonant cavity |
| CN108963752B (en) * | 2018-09-27 | 2023-07-25 | 青岛科技大学 | Electric driving laser based on annular photonic crystal nano beam resonant cavity |
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