CN110289553A - Multi-wavelength silicon substrate iii-v hybrid integrated laser, its array element and preparation method - Google Patents
Multi-wavelength silicon substrate iii-v hybrid integrated laser, its array element and preparation method Download PDFInfo
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- CN110289553A CN110289553A CN201910558180.8A CN201910558180A CN110289553A CN 110289553 A CN110289553 A CN 110289553A CN 201910558180 A CN201910558180 A CN 201910558180A CN 110289553 A CN110289553 A CN 110289553A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
Abstract
A kind of multi-wavelength silicon substrate iii-v hybrid integrated laser, its array element and preparation method, the silicon substrate iii-v hybrid integrated laser array unit includes III-V semiconductor epitaxial layers and SOI substrate connected to it, wherein, III-V semiconductor epitaxial layers are equipped with several III-V waveguides, several P electrodes and N electrode；SOI substrate is equipped with laser output precision.Each Waveguide array is coupled into a silicon waveguide as Single wavelength using multiple waveguides and exports in silicon substrate hybrid integrated laser array of the invention, to improve the output power of laser.
Description
Technical field
The present invention relates to field of lasers more particularly to a kind of multi-wavelength silicon substrate iii-v hybrid integrated lasers, its battle array
Column unit and preparation method.
Background technique
Silicon photon is a kind of exciting technology, be based on silicon and silicon-based substrate material, as SiGe/Si, SOI (germanium silicon/
Silicon on silicon, insulating substrate) etc., optical device, which is carried out, using existing CMOS (complementary metal oxide semiconductor) technique develops sum aggregate
At technology of new generation, combine the characteristic and photon technology superelevation of ultra-large, the superhigh precision manufacture of integrated circuit technique
Rate, the advantage of super low-power consumption are the subversiveness technologies for coping with Moore's Law failure.
Silicon optical chip increasingly increases in the demand of data communication field, the low-loss of silicon light and compatible with CMOS technology
Characteristic determine silicon light it is integrated be most effective optic communication approach, silicon photon integrated chip include light source, modulator, detector,
The devices such as photoswitch, optical waveguide, silicon photon integrated chip realize the chip of certain specific function, such as transceiving chip.Silicon substrate light source
As the core of silicon photon integrated chip, there are two types of the light source packages in silicon-based optical interconnection, first is that light source is introduced in chip exterior,
Another light source package is light source on the silicon chip of silicon substrate hybrid integrated III-V material, compared with introducing light source outside chip, it
Advantage be to be easy to and silicon is integrated, light source density is high, it is more promising.
Silicon integreted phontonics technology has been greatly developed by the research of early period, but silicon substrate light source is still worldwide
Problem.Since Intel in 2006 has invented first electrical pumping silicon substrate hybrid integrated laser, silicon substrate hybrid integrated at present
Laser has obtained extensive research.
In order to increase the output power of silicon substrate hybrid integrated laser, respectively from adjustment III-V epitaxial wafer parameter and excellent
Change Cavity surface etc. to consider.
Summary of the invention
In view of this, one of main object of the present invention is to propose that a kind of multi-wavelength silicon substrate iii-v hybrid integrated swashs
Light device, its array element and preparation method, at least be partially solved at least one of above-mentioned technical problem.
To achieve the goals above, as one aspect of the present invention, it is sharp to provide a kind of silicon substrate iii-v hybrid integrated
Light device array element, including III-V semiconductor epitaxial layers and SOI substrate connected to it, wherein
III-V semiconductor epitaxial layers are equipped with several III-V waveguides, several P electrodes and N electrode；
SOI substrate is equipped with laser output precision.
As another aspect of the present invention, a kind of silicon substrate iii-v hybrid integrated laser is additionally provided, including several
Silicon substrate iii-v hybrid integrated laser array unit as described above.
As an additional aspect of the present invention, a kind of silicon substrate iii-v hybrid integrated laser as described above is additionally provided
Preparation method, comprising:
The silicon waveguide and micro-structure of multiple parallel arrangements are made on SOI substrate；
Using III-V semiconductor material successively epitaxial growth buffer, N-type ohmic contact layer, active area, p-type cap rock with
And p-type ohmic contact layer, form III-V semiconductor epitaxial layers；
The SOI piece for etching silicon waveguide is bonded with III-V semiconductor epitaxial layers；
Patterned process is carried out on III-V semiconductor epitaxial layers, etches III-V waveguide, micro- knot in III-V waveguide
Structure, growth P electrode, N electrode, complete the preparation of silicon substrate hybrid integrated laser array.
Based on the above-mentioned technical proposal it is found that multi-wavelength silicon substrate iii-v hybrid integrated laser of the invention, its array list
Member and preparation method one of at least have the advantage that compared with the existing technology:
(1) each Waveguide array uses multiple waveguides to be coupled into a silicon waveguide work in silicon substrate hybrid integrated laser array
It is exported for Single wavelength, to improve the output power of laser.
(2) multiple silicon waveguide array structures are different in the present invention, multiple and different wavelength exported, to realize multi-wavelength silicon
Base iii-v hybrid integrated laser array.
Detailed description of the invention
Fig. 1 is the three-dimensional knot of the multi-wavelength silicon substrate iii-v hybrid integrated laser array unit of one embodiment of the invention
Structure schematic diagram；
Fig. 2 is that the single of the multi-wavelength silicon substrate iii-v hybrid integrated laser array unit of one embodiment of the invention swashs
Light device structure top view；
Fig. 3 is the mode distribution map of the multi-wavelength silicon substrate iii-v hybrid integrated laser array of one embodiment of the invention.
Description of symbols:
001-III-V semiconductor epitaxial layers；002-SOI substrate；003-III-V waveguide；041-P electrode；042-N electrode；
005- laser array unit；006- silicon waveguide；007- waveguide coupler；008- silicon bus waveguide；009- micro-structure；101- lining
Bottom；102- buried oxide layer；103- silicon top layer；104-N type bonded layer；105-N type ohmic contact layer；106- active area；107-P type
Cap rock；108-P type ohmic contact layer.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
The invention discloses a kind of silicon substrate iii-v hybrid integrated laser array units, which is characterized in that including III-
V semiconductor epitaxial layers and SOI substrate connected to it, wherein
III-V semiconductor epitaxial layers are equipped with several III-V waveguides, several P electrodes and N electrode；
SOI substrate is equipped with laser output precision.
Wherein, the laser output precision includes silicon bus waveguide, waveguide coupler, several silicon waveguides；Several institute
It states silicon waveguide to connect by silicon bus waveguide with waveguide coupler, for exporting laser；
Wherein, the width of several silicon waveguides and depth are all the same.
Wherein, the silicon waveguide or III-V waveguide are equipped with the micro-structure for selecting optical maser wavelength；
Wherein, the micro-structure includes but is not limited to single order grating, higher order gratings, sampled-grating, photon crystal structure；
Wherein, the photoetching before grating etching is carried out by electron beam exposure or holographic exposure.
Wherein, the SOI substrate successively includes substrate layer, buried oxide layer, silicon top layer；
The III-V semiconductor epitaxial layers successively include N-type bonded layer, N-type ohmic contact layer, active area, p-type cap rock with
And p-type ohmic contact layer；
The N electrode is arranged on N-type ohmic contact layer；
The P electrode is arranged on p-type ohmic contact layer；
The silicon waveguide, silicon bus waveguide and coupler are each provided in top layer silicon；
Wherein, the N-type bonded layer is made of N-type GaInAsP/InP superlattice layer；
Wherein, the P electrode, N electrode are formed by sputtering, evaporation, photoetching, etching technics.
Wherein, the III-V waveguide is formed by III-V semiconductor epitaxial pattern layers, III-V waveguide both ends and silicon waveguide
Both ends be connected, the structure of III-V waveguide two sides is the p-type cap rock and active area that are not etched after patterning；
Wherein, the III-V waveguide is in ridge.
Wherein, the silicon waveguide is that SOI substrate is made by patterning and etching；
Wherein, each silicon waveguide and III-V waveguide correspond, and vertically aligned；
Wherein, the silicon waveguide and III-V waveguide are made by photoetching, lithographic technique.
Wherein, the III-V semiconductor epitaxial layers and SOI substrate pass through together with bonding pattern hybrid integrated；
Wherein, the bonding method includes metal bonding, medium bonding or direct wafer bonding；
Wherein, the silicon waveguide is made on the SOI substrate before bonding, and III-V waveguide is after bonding
It is made on laser array unit.
Wherein, the interlude of the III-V waveguide is straight wave guide, both ends are wedge shape；
Wherein, the wedge structure at III-V waveguide both ends is that N-type ohmic contact layer bottom is etched by patterned process
Portion, the III-V waveguide interlude straight wave guide structure etches into N-type ohmic contact layer top.
The invention also discloses a kind of silicon substrate iii-v hybrid integrated lasers, including several silicon substrates as described above
Iii-v hybrid integrated laser array unit.
Wherein, the laser array is arranged in parallel；
Wherein, silicon waveguide and micro-structure are different in each laser array unit, for exporting different wave length
Laser.
The invention also discloses a kind of preparation methods of silicon substrate iii-v hybrid integrated laser as described above, comprising:
The silicon waveguide and micro-structure of multiple parallel arrangements are made on SOI substrate；
Using III-V semiconductor material successively epitaxial growth buffer, N-type ohmic contact layer, active area, p-type cap rock with
And p-type ohmic contact layer, form III-V semiconductor epitaxial layers；
The SOI piece for etching silicon waveguide is bonded with III-V semiconductor epitaxial layers；
Patterned process is carried out on III-V semiconductor epitaxial layers, etches III-V waveguide, micro- knot in III-V waveguide
Structure, growth P electrode, N electrode, complete the preparation of silicon substrate hybrid integrated laser array.
Explanation is further elaborated to technical solution of the present invention below by way of specific embodiment combination attached drawing.It should be noted that
, following specific embodiments are only as example, the scope of protection of the present invention is not limited thereto.
It is a kind of that powerful multi-wavelength silicon substrate iii-v hybrid integrated laser may be implemented suitable for silicon photon chip
Array and preparation method thereof, the laser array pass through key by III-V semiconductor epitaxial layers 001 and 002 two kinds of materials of SOI substrate
Conjunction mode hybrid integrated is together.Group III-V semiconductor epitaxial layer 001 includes N number of III-V waveguide 003 and P electrode 041 and N electricity
Pole 042.It include N number of silicon waveguide array 005 on SOI substrate 002, each silicon waveguide array 005 includes M mutually isostructural silicon wave
Lead 006,1 coupler and 1 silicon bus waveguide 008, N number of III-V waveguide 003 and N number of silicon waveguide array (laser array list
Member) about 005 one-to-one correspondence.The light that III-V waveguide 003 issues is coupled into silicon waveguide array 005 by evanescent wave, the battle array
The laser of M silicon waveguide transmission phase co-wavelength in column closes beam by waveguide coupler 007 and enters 1 silicon bus waveguide 008
In, to improve the output power of single wavelength.N number of 005 structure of silicon waveguide array is different, exports N number of different wavelength, thus
Realize multi-wavelength silicon substrate iii-v hybrid integrated laser array.
SOI substrate 002 and III-V semiconductor epitaxial layers 001 are made by bonding technology, and bonding strategy includes metal
Bonding, medium bonding or direct wafer bonding.Silicon waveguide 006 is made on SOI substrate 002 before bonding,
III-V waveguide is made on III-V/SOI sample after bonding.
Its device (laser array unit) is integrally divided into the straight waveguide sections of interlude, the wedge-shaped waveguide portion of two sections of front and back
Point and rear and front end silicon waveguide out-coupling part.
The wedge-shaped waveguide that two sections of front and back is connected with the straight wave guide of interlude, and two sections of front and back wedge-shaped waveguide passes through patterned process
105 bottom of N-type ohmic contact layer is etched into, interlude straight wave guide etches into 105 top of N-type ohmic contact layer.
Each silicon waveguide 006 is one-to-one with III-V waveguide 003, and is alignment in vertical direction.
Silicon waveguide 006 and III-V waveguide 003 is made by photoetching, lithographic technique.
Silicon substrate laser array element 005 is successively silicon substrate (substrate layer) 101, BOX layer (buried oxide layer) from below to up
102, top layer silicon 103, N-type bonded layer 104, N-type ohmic contact layer 105, active area 106, p-type cap rock 107 and p-type ohm connect
Contact layer 108；
The wavelength transmitted in M silicon waveguide 006 is selected by micro-structure 009, and micro-structure 009 is formed in silicon waveguide
In the structure of 006 or III-V waveguide 003, micro-structure 009 includes but is not limited to single order grating, higher order gratings, sampled-grating, light
Sub- crystal structure etc..
The laser way of output of 006 output area of silicon waveguide can be there are many mode, and including but not limited to light is from silicon waveguide 006
On coupling grating output, light from 006 end face of silicon waveguide export.
The micro-structure 009 in the silicon waveguide 006 and silicon waveguide 006 of multiple parallel arrangements is made on SOI substrate 002；
Utilize III-V semiconductor layer material successively epitaxial growth buffer (including substrate layer, buried oxide layer, top layer silicon), N-type
Ohmic contact layer 105, active area 106, p-type cap rock 107 and p-type ohmic contact layer 108 form III-V semiconductor epitaxial wafer；
The SOI piece for etching silicon waveguide is bonded with III-V semiconductor epitaxial wafer,
Patterned process is carried out on III-V semiconductor epitaxial wafer, etches III-V waveguide, micro- knot in III-V waveguide
Structure, growth P electrode, N electrode, complete the preparation of silicon substrate hybrid integrated laser array.
The invention proposes a kind of silicon substrate iii-v hybrid integrated laser arrays and preparation method thereof.
In the above-mentioned technical solutions, SOI substrate 002 and III-V semiconductor epitaxial layers 001 are made by bonding technology
At, bonding strategy includes that metal bonding, medium bonding or direct wafer bonding, silicon waveguide are made before bonding technology,
III-V waveguide and structure are to carry out technique after bonding.
Silicon substrate laser includes straight waveguide sections, tapered waveguide section and silicon waveguide out-coupling part.Soi layer (SOI
Substrate) it include substrate silicon, buried oxide layer and top layer silicon, N-type ohmic contact layer is formed on N-type bonded layer, and N-type bonded layer is by N
Type GaInAsP/InP superlattice layer composition；Active area is formed on N-type ohmic contact layer；P-type cap rock, is formed in active area
On；III-V waveguide is formed by III-V semiconductor epitaxial pattern layers, and both ends are connected with the front and back end of silicon waveguide, two sides
Structure is the active area of the p-type cap rock and lower section that are not etched after patterning；P-type ohmic contact layer, be located at III-V waveguide it
On；P electrode is located on p-type ohmic contact layer；N electrode is located on N-type ohmic contact layer.
In each silicon waveguide array of silicon substrate iii-v hybrid integrated laser array, transmission wavelength is logical in M silicon waveguide
It crosses production to be selected with the identical micro-structure in silicon waveguide, the silicon waveguide and micro-structure between N number of silicon waveguide array are mutually not
It is identical, to export N number of different wavelength.Micro-structure includes single order grating, higher order gratings, sampled-grating, photon crystal structure.
Silicon waveguide is that SOI substrate is made by patterning and etching.
Fig. 1 is the single laser structure schematic diagram of multi-wavelength silicon substrate iii-v hybrid integrated laser array, such as Fig. 1
It is shown, it include III-V waveguide 003, P electrode 041, N electrode 042, silicon waveguide 005, waveguide coupler in single silicon substrate laser
008 and silicon bus waveguide 007.
Fig. 2 is the structural schematic diagram of multi-wavelength silicon substrate iii-v hybrid integrated laser array, as shown in Fig. 2, laser
Array is four arrays, and the total waveguide output wavelength of each silicon of array laser is different, and modeling structure is in III-V and SOI waveguide
Optical grating construction, the grating parameter difference of each waveguide channels is to select four wavelength.
Fig. 3 is the mode distribution map of multi-wavelength silicon substrate iii-v hybrid integrated on piece laser array, as shown in figure 3, swashing
Light device mode is mainly distributed in silicon waveguide, and III-V Quantum Well light field restriction factor meets conditions for lasing.
M in multi-wavelength silicon substrate iii-v hybrid integrated laser array in the laser in every channel is mutually isostructural
Silicon waveguide is synthesized in 1 silicon bus waveguide by 1 coupler, as shown in Figure 1, by taking n=2 as an example, the grating week of 2 silicon waveguides
Phase and duty ratio are consistent, and optical grating construction is single order grating, higher order gratings, sampled-grating or photon crystal structure.Each silicon wave
Lead width having the same and depth.
III-V waveguide and silicon waveguide are by etching work in multi-wavelength silicon substrate iii-v hybrid integrated laser array
Skill is completed, and growth SiO is needed before III-V waveguide etching2As mask layer, photoetching and etching SiO2Figure is formed, and then passes through figure
The SiO of shape2Layer etching III-V waveguide.The etching of SOI top layer silicon waveguide forms ridge waveguide, and the photoetching before grating etching is
It is carried out by electron beam exposure or holographic exposure.
P electrode, N electrode in multi-wavelength silicon substrate iii-v hybrid integrated laser array in III-V waveguide are by splashing
It penetrates, evaporate, photoetching, the techniques such as etching are formed.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of silicon substrate iii-v hybrid integrated laser array unit, which is characterized in that including III-V semiconductor epitaxial layers
With SOI substrate connected to it, wherein
III-V semiconductor epitaxial layers are equipped with several III-V waveguides, several P electrodes and N electrode；
SOI substrate is equipped with laser output precision.
2. laser array unit according to claim 1, which is characterized in that
The laser output precision includes silicon bus waveguide, waveguide coupler, several silicon waveguides；Several described silicon waveguides are logical
It crosses silicon bus waveguide to connect with waveguide coupler, for exporting laser；
Preferably, the width and depth of several silicon waveguides are all the same.
3. laser array unit according to claim 1, which is characterized in that
The silicon waveguide or III-V waveguide is equipped with the micro-structure for selecting optical maser wavelength；
Preferably, the micro-structure includes but is not limited to single order grating, higher order gratings, sampled-grating, photon crystal structure；
As further preferred, the photoetching before grating etching is carried out by electron beam exposure or holographic exposure.
4. laser array unit according to claim 1, which is characterized in that
The SOI substrate successively includes substrate layer, buried oxide layer, silicon top layer；
The III-V semiconductor epitaxial layers successively include N-type bonded layer, N-type ohmic contact layer, active area, p-type cap rock and P
Type ohmic contact layer；
The N electrode is arranged on N-type ohmic contact layer；
The P electrode is arranged on p-type ohmic contact layer；
The silicon waveguide, silicon bus waveguide and coupler are each provided in top layer silicon；
Preferably, the N-type bonded layer is made of N-type GaInAsP/InP superlattice layer；
Preferably, the P electrode, N electrode are formed by sputtering, evaporation, photoetching, etching technics.
5. laser array unit according to claim 1, which is characterized in that
The III-V waveguide is formed by III-V semiconductor epitaxial pattern layers, the both ends phase at III-V waveguide both ends and silicon waveguide
Connection, the structure of III-V waveguide two sides are the p-type cap rock and active area not being etched after patterning；
Preferably, the III-V waveguide is in ridge.
6. laser array unit according to claim 1, which is characterized in that
The silicon waveguide is that SOI substrate is made by patterning and etching；
Preferably, each silicon waveguide and III-V waveguide correspond, and vertically aligned；
Preferably, the silicon waveguide and III-V waveguide are made by photoetching, lithographic technique.
7. laser array unit according to claim 1, which is characterized in that
The III-V semiconductor epitaxial layers and SOI substrate pass through together with bonding pattern hybrid integrated；
Preferably, the bonding method includes metal bonding, medium bonding or direct wafer bonding；
Preferably, the silicon waveguide is made on SOI substrate before bonding, III-V waveguide is after bonding
It is made on laser array unit.
8. laser array unit according to claim 1, which is characterized in that
The interlude of the III-V waveguide is straight wave guide, both ends are wedge shape；
Preferably, the wedge structure at III-V waveguide both ends is to etch into N-type ohmic contact layer bottom by patterned process
Portion, the III-V waveguide interlude straight wave guide structure etches into N-type ohmic contact layer top.
9. a kind of silicon substrate iii-v hybrid integrated laser, which is characterized in that including several such as any one of claim 1-8 institute
The silicon substrate iii-v hybrid integrated laser array unit stated；
Preferably, the laser array is arranged in parallel；
Preferably, silicon waveguide and micro-structure are different in each laser array unit, for exporting different wave length
Laser.
10. a kind of preparation method of silicon substrate iii-v hybrid integrated laser as claimed in claim 9, comprising:
The silicon waveguide and micro-structure of multiple parallel arrangements are made on SOI substrate；
Utilize III-V semiconductor material successively epitaxial growth buffer, N-type ohmic contact layer, active area, p-type cap rock and p-type
Ohmic contact layer forms III-V semiconductor epitaxial layers；
The SOI piece for etching silicon waveguide is bonded with III-V semiconductor epitaxial layers；
Patterned process is carried out on III-V semiconductor epitaxial layers, etch III-V waveguide, the micro-structure in III-V waveguide,
P electrode, N electrode are grown, the preparation of silicon substrate hybrid integrated laser array is completed.
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| CN111934196B (en) * | 2020-06-28 | 2021-12-10 | 北京大学 | Electrically-driven on-chip integrated erbium-doped waveguide amplifier and preparation method thereof |
| CN112290385A (en) * | 2020-10-30 | 2021-01-29 | 中国科学院半导体研究所 | Multi-wavelength silicon-based III-V group hybrid integrated laser array unit and manufacturing method thereof |
| CN115912054A (en) * | 2022-11-09 | 2023-04-04 | 北京无线电测量研究所 | Silicon-based FP laser device, integrated tunable laser and preparation method thereof |
| CN115995759A (en) * | 2023-03-22 | 2023-04-21 | 中国科学院半导体研究所 | Multi-wavelength laser and manufacturing method thereof |
| CN115995759B (en) * | 2023-03-22 | 2023-06-06 | 中国科学院半导体研究所 | Multi-wavelength laser and manufacturing method thereof |
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