CN111006853B - Optical power determination method for integrated laser optical transmission analysis - Google Patents
Optical power determination method for integrated laser optical transmission analysis Download PDFInfo
- Publication number
- CN111006853B CN111006853B CN201911295056.3A CN201911295056A CN111006853B CN 111006853 B CN111006853 B CN 111006853B CN 201911295056 A CN201911295056 A CN 201911295056A CN 111006853 B CN111006853 B CN 111006853B
- Authority
- CN
- China
- Prior art keywords
- integrated
- quantum efficiency
- laser
- slope
- reflectivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 75
- 230000005540 biological transmission Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000002310 reflectometry Methods 0.000 claims abstract description 57
- 238000000605 extraction Methods 0.000 claims description 9
- 230000010354 integration Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0228—Testing optical properties by measuring refractive power
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides an optical power determination method for integrated laser optical transmission analysis, which comprises the following steps: acquiring optical transmission data; measuring power values of lasers with different cavity lengths under different currents, wherein the lasers with different cavity lengths comprise: non-integrated lasers and integrated lasers; drawing each current power curve according to the power value of each laser under different currents to obtain the slope of each current power curve; obtaining the external quantum efficiency of each laser according to the slope of each current power curve; and obtaining the optical power of the integrated laser according to the optical transmission data, the non-integrated differential quantum efficiency calculation formula, the integrated differential quantum efficiency calculation formula and the external quantum efficiency. According to the invention, the power values of the lasers with different cavity lengths under different currents are measured to obtain the slope of each current power curve, and finally the optical power of the integrated laser is obtained, so that the problems that the reflectivity of the mirror surface of the integrated laser cannot be directly measured and the optical power of the integrated laser cannot be determined are solved.
Description
Technical Field
The invention relates to the field of integrated lasers, in particular to an optical power determination method for optical transmission analysis of an integrated laser.
Background
The semiconductor laser comprises a resonant cavity, a high-reflection mirror surface and a light-emitting mirror surface, the reflectivity of the light-emitting mirror surface influences the light-emitting power of the laser and the magnitude of the laser preset current, the reflectivity of the laser mirror surface is determined by mirror coating in the prior art, but with the arrival of a big data era, an integrated photonic circuit is required to be adopted for light transmission among chips, so that the integrated laser is more and more universal in application, and the efficiency is better.
In this case, the reflectivity of the laser mirror surface is changed from the original coating film to the equivalent refractive index of the coating film, the air (the distance between the laser and the waveguide) and the waveguide material (or the modulator material) to form a new reflectivity, but due to the limitation of the light receiving efficiency design, the distance between the laser and the waveguide (or the modulator) is very small (only several micrometers), the laser power entering the waveguide cannot be obtained through the actual measurement mode, and the process error can cause the design and actual difference of the distance between the laser and the waveguide, thereby changing the reflectivity of the emitted light, and having a serious influence on the application of the laser.
Disclosure of Invention
In view of this, an embodiment of the present invention provides an optical power determining method for optical transmission analysis of an integrated laser, so as to solve the problem in the prior art that the reflectivity of the light-emitting surface of the integrated laser cannot be directly measured, and thus the optical power of the integrated laser cannot be determined.
The embodiment of the invention provides an optical power determination method for integrated laser optical transmission analysis, which comprises the following steps: acquiring optical transmission data; measuring power values of lasers with different cavity lengths at different currents, wherein the lasers with different cavity lengths comprise: non-integrated lasers and integrated lasers; drawing each current power curve according to the power value of each laser under different currents to obtain the slope of each current power curve; obtaining the external quantum efficiency of each laser according to the slope of each current power curve; and obtaining the optical power of the integrated laser according to the optical transmission data, the non-integrated differential quantum efficiency calculation formula, the integrated differential quantum efficiency calculation formula and the external quantum efficiency.
Optionally, the optical transmission data includes: the reflectivity of the non-integrated light-emitting surface, the reflectivity of the non-integrated reflecting surface, the reflectivity of the integrated reflecting surface, the laser cavity length and the mirror surface loss.
Optionally, the external quantum efficiency comprises: non-integrated external quantum efficiency and integrated external quantum efficiency.
Optionally, the value of the external quantum efficiency of the laser is calculated by the following formula:
wherein eta isdDenotes the external quantum efficiency, K1The slope of the current power curve is shown, h represents the Planck constant, v represents the frequency of light waves, e represents the electron electric quantity, and lambda represents the wavelength.
Optionally, after the step of obtaining each external quantum efficiency, the method further comprises: and obtaining the internal quantum efficiency and the internal loss according to the calculation formulas of the non-integrated external quantum efficiency, the laser cavity length and the non-integrated differential quantum efficiency.
Optionally, the non-integrated differential quantum efficiency calculation formula is as follows:
wherein eta isd,1Representing non-integrated external quantum efficiency, ηiDenotes the internal quantum efficiency, αiDenotes internal loss, R1And R2Respectively representing the reflectivity of the non-integrated reflecting surface and the reflectivity of the non-integrated light-emitting surface, and L representing the cavity length of the laser.
Optionally, the integrated differential quantum efficiency is expressed by the following equation:
wherein eta isd,backRepresenting integrated differential quantum efficiency, FbackExpressing the light extraction proportionality coefficient, etaiDenotes the internal quantum efficiency, αmRepresenting mirror loss, αiIndicating internal losses.
Taking reciprocal of the integrated differential quantum efficiency to obtain a calculation formula of the integrated differential quantum efficiency as follows:
wherein eta isd,backRepresenting integrated differential quantum efficiency, FbackExpressing the light extraction proportionality coefficient, etaiDenotes the internal quantum efficiency, αiDenotes internal loss, RInverse directionRepresenting the reflectivity, R, of the integrated reflecting surfaceGo outThe reflectivity of the integration light-emitting surface is shown, and L represents the laser cavity length.
Optionally, the light extraction scale factor is expressed by the following formula:
wherein eta isd,backRepresenting integrated differential quantum efficiency, FbackExpressing the light extraction proportionality coefficient, etaiDenotes internal quantum efficiency, RInverse directionRepresenting the reflectivity, R, of the integrated reflecting surfaceGo outRepresenting the reflectivity, alpha, of the integrated light-emitting surfacemRepresenting mirror loss, αiIndicating internal loss and L the laser cavity length.
Optionally, the step of obtaining the optical power of the integrated laser according to the optical transmission data, the non-integrated differential quantum efficiency calculation formula, the integrated differential quantum efficiency calculation formula, and the external quantum efficiency includes: fitting a non-integrated differential quantum slope of the inverse non-integrated external quantum efficiency changing along with the cavity length according to each non-integrated external quantum efficiency, the corresponding laser cavity length and a non-integrated differential quantum efficiency calculation formula; fitting an integrated differential quantum slope of the reciprocal of the integrated external quantum efficiency along with the change of the cavity length according to each integrated external quantum efficiency, the corresponding laser cavity length and integrated change curve and an integrated differential quantum efficiency calculation formula; and comparing the non-integrated differential quantum slope with the non-integrated differential quantum slope to obtain the optical power of the integrated laser.
Optionally, the step of comparing the non-integrated differential quantum slope with the non-integrated differential quantum slope to obtain the optical power of the integrated laser includes: comparing the non-integrated differential quantum slope with the non-integrated differential quantum slope to obtain the reflectivity of the light-emitting surface of the integrated laser; and obtaining the optical power of the integrated laser according to the reflectivity of the light-emitting surface of the integrated laser.
The technical scheme of the invention has the following advantages:
1. according to the optical power determining method for the optical transmission analysis of the integrated laser, which is provided by the embodiment of the invention, the power values of the lasers with different cavity lengths under different currents are obtained through measurement, so that the current power curves are obtained, then the slopes of the current power curves are obtained, further the external quantum efficiency of the lasers is obtained, finally the optical power of the integrated laser is obtained through comparing a non-integrated differential quantum efficiency calculation formula and an integrated differential quantum efficiency calculation formula, and the problems that the reflectivity of the light-emitting surface of the integrated laser cannot be directly measured, and further the optical power of the integrated laser cannot be determined are solved.
2. The optical power determination method for the optical transmission analysis of the integrated laser, provided by the embodiment of the invention, respectively fits the non-integrated differential quantum slope of the inverse of the non-integrated external quantum efficiency along with the change of the cavity length and the integrated differential quantum slope of the inverse of the integrated external quantum efficiency along with the change of the cavity length through the non-integrated differential quantum efficiency calculation formula and the integrated differential quantum efficiency calculation formula, and then compares the two slopes to obtain the optical power of the integrated laser.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of an optical power determination method for integrated laser optical transmission analysis in an embodiment of the present invention;
FIG. 2 is a flow chart of calculating the optical power of an integrated laser in an embodiment of the present invention;
fig. 3 is a flowchart for comparing the non-integrated differential quantum slope and the non-integrated differential quantum slope to obtain the optical power of the integrated laser in the embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment of the invention provides an optical power determination method for integrated laser optical transmission analysis, which specifically comprises the following steps of:
step S1: optical transmission data is acquired.
In the embodiment of the present invention, when the reflectivity of the mirror surface of the non-integrated laser can be measured, the optical power of the light emitting surface of the integrated laser is obtained by comparing the data of the non-integrated laser with the data of the integrated laser, and when analyzing the optical transmission characteristics of the laser, the optical transmission data of the laser is acquired first, where the optical transmission data includes: the reflectivity of the non-integrated light-emitting surface, the reflectivity of the non-integrated reflecting surface, the reflectivity of the integrated reflecting surface, the laser cavity length and the mirror surface loss. In practical applications, the reflectivity of the non-integrated light-emitting surface and the reflectivity of the non-integrated reflecting surface may be determined by the mirror coating, or may be determined by the material in the case of a natural fracture surface, and the invention is not limited thereto.
Step S2: measuring the current and power of lasers of different cavity lengths, the lasers of different cavity lengths comprising: non-integrated lasers and integrated lasers.
In the embodiment of the invention, lasers to be measured comprise a non-integrated laser and an integrated laser, the power values of the non-integrated lasers with different cavity lengths under different currents are measured firstly, then the integrated laser with the same cavity length is designed, and then the current and the power of the integrated laser with different cavity lengths are measured. Assuming that the cavity lengths of the lasers to be compared are 100, 200, 300, 400 and 500 μm, respectively, the current and power of the non-integrated laser with the cavity length of 100 μm need to be measured, the current and power of the non-integrated laser with the cavity length of 200 μm need to be measured, and so on, then the integrated lasers with different cavity lengths are designed, and the power values of the integrated lasers under different currents are also measured, wherein the more lasers with different cavity lengths are selected, the more accurate the fitting result is. It should be noted that, in the embodiment of the present invention, only the integrated and non-integrated lasers with the cavity lengths of 100, 200, 300, 400 and 500 μm are taken as examples for description, and the actual application may be different according to the actual needs, and the number of the measurement data may also be adjusted according to the actual needs, and the number of the data is at least two, and the present invention is not limited thereto.
Step S3: and drawing each current power curve according to the power value of each laser under different currents to obtain the slope of each current power curve.
In the embodiment of the invention, the power values of the lasers under different currents are obtained through measurement, wherein the power values of the non-integrated lasers with different cavity lengths under different currents and the power values of the integrated lasers with different cavity lengths under different currents are also obtained, and the current power curves of the non-integrated lasers with different cavity lengths and the current power curves of the integrated lasers with different cavity lengths are respectively drawn according to the current and power data to obtain the slope of each current power curve. Taking the different cavity lengths as examples, according to the power values of the non-integrated lasers with the cavity lengths of 100, 200, 300, 400 and 500 μm under different currents, curves of the power with the cavity length of 100 μm changing with the current are respectively drawn to obtain the corresponding current power curve slopes, and so on, the current power curve slopes of other cavity lengths and the current power curve slopes of the integrated lasers with different cavity lengths can be obtained.
Step S4: and obtaining the external quantum efficiency of each laser according to the slope of each current power curve.
In the embodiment of the invention, after the slopes of the current power curves are respectively obtained, the external quantum efficiency of each laser can be respectively obtained, and the external quantum efficiency comprises each non-integrated external quantum efficiency obtained by calculation according to the slopes of the current power curves of the non-integrated lasers with different cavity lengths and integrated external quantum efficiency obtained by calculation according to the slopes of the current power curves of the integrated lasers with different cavity lengths.
Wherein the value of the external quantum efficiency of the laser can be calculated by the following formula:
wherein eta isdDenotes the external quantum efficiency, K1The slope of the current power curve is shown, h represents the Planck constant, v represents the frequency of light waves, e represents the electron electric quantity, and lambda represents the wavelength. KnThe slope of each current-power curve, the wavelength and the electron quantum quantity obtained above are determined according to the emitted light and are known constants, so that the corresponding external quantum efficiency can be obtained according to the slope of each current-power curve.
Step S5: and obtaining the internal quantum efficiency and the internal loss according to the non-integrated external quantum efficiency and the non-integrated differential quantum efficiency calculation formulas.
In the embodiment of the present invention, after obtaining each external quantum efficiency, the internal quantum efficiency and the internal loss can be calculated according to a non-integrated external quantum efficiency and a non-integrated differential quantum efficiency calculation formula, where the non-integrated differential quantum efficiency calculation formula is shown in formula (2):
wherein eta isd,1Representing non-integrated external quantum efficiency, ηiDenotes the internal quantum efficiency, αiDenotes internal loss, R1And R2Respectively representing the reflectivity of the non-integrated reflecting surface and the reflectivity of the non-integrated light-emitting surface, and L representing the cavity length of the laser.
According to the embodiment of the invention, the internal quantum efficiency and the internal loss can be solved according to two groups of non-integrated external quantum efficiencies and cavity lengths of the non-integrated laser, because the internal quantum efficiency and the internal loss of the laser are determined according to the material and structural design of the laser, the integration and non-integration have no influence on the internal quantum efficiency and the internal loss, and then unknown parameter solution can be carried out on the calculation formula of the integrated differential quantum efficiency according to the internal quantum efficiency and the internal loss.
Step S6: and obtaining the optical power of the integrated laser according to the optical transmission data, the non-integrated differential quantum efficiency calculation formula, the integrated differential quantum efficiency calculation formula and the external quantum efficiency.
In the embodiment of the invention, the optical power of the integrated laser can be obtained by comparing the two data of the non-integrated laser and the integrated laser according to the acquired optical transmission data, the non-integrated differential quantum efficiency calculation formula, the integrated differential quantum efficiency calculation formula and the external quantum efficiency.
According to the optical power determining method for the optical transmission analysis of the integrated laser, provided by the embodiment of the invention, each current power curve is obtained by measuring the current and the power of each laser with different cavity lengths, then the slope of each current power curve is obtained, the external quantum efficiency of each laser is further obtained, finally, the optical power of the integrated laser is obtained by comparing a non-integrated differential quantum efficiency calculation formula and an integrated differential quantum efficiency calculation formula, and the problems that the reflectivity of the light-emitting surface of the integrated laser cannot be directly measured, and the optical power of the integrated laser cannot be determined are solved.
In a specific embodiment, as shown in fig. 2, the process of executing step S6 may specifically include the following steps:
step S61: and fitting the non-integrated differential quantum slope of the inverse non-integrated external quantum efficiency changing along with the cavity length according to the non-integrated external quantum efficiency, the corresponding laser cavity length and the non-integrated differential quantum efficiency calculation formula.
In the embodiment of the invention, according to the non-integrated external quantum efficiencies of different cavity lengths, as described in the above example, five non-integrated external quantum efficiencies can be obtained, then, according to a non-integrated differential quantum efficiency calculation formula, data of the reciprocal of the non-integrated external quantum efficiency along with the cavity length is obtained, and then, a non-integrated differential quantum slope is fitted, which can be determined by the above steps, and each quantity in the formula (2) is a known quantity.
Step S62: and fitting the integrated differential quantum slope of the reciprocal of the integrated external quantum efficiency along with the change of the cavity length according to the integrated external quantum efficiency, the corresponding laser cavity length and integrated change curve and the integrated differential quantum efficiency calculation formula.
In the embodiment of the present invention, according to the integrated external quantum efficiencies of different cavity lengths, as described in the above example, five integrated external quantum efficiencies may be obtained, and then according to an integrated differential quantum efficiency calculation formula, data of a reciprocal of the integrated external quantum efficiency changing with the cavity length is obtained, and then an integrated differential quantum slope is fitted, where the integrated differential quantum efficiency is expressed by the following formula:
wherein eta isd,backRepresenting integrated differential quantum efficiency, FbackExpressing the light extraction proportionality coefficient, etaiDenotes the internal quantum efficiency, αmRepresenting mirror loss, αiIndicating internal losses.
The embodiment of the invention takes the reciprocal of the integrated differential quantum efficiency to obtain a calculation formula of the integrated differential quantum efficiency as follows:
wherein eta isd,backRepresenting integrated differential quantum efficiency, FbackExpressing the light extraction proportionality coefficient, etaiDenotes the internal quantum efficiency, αiDenotes internal loss, RInverse directionRepresenting the reflectivity, R, of the integrated reflecting surfaceGo outThe reflectivity of the integration light-emitting surface is shown, and L represents the laser cavity length.
The light extraction proportionality coefficient is expressed by the following formula:
wherein,ηd,backrepresenting integrated differential quantum efficiency, FbackExpressing the light extraction proportionality coefficient, etaiDenotes internal quantum efficiency, RInverse directionRepresenting the reflectivity, R, of the integrated reflecting surfaceGo outRepresenting the reflectivity, alpha, of the integrated light-emitting surfacemRepresenting mirror loss, αiIndicating internal loss and L the laser cavity length.
In the above equation (4), the differential quantum efficiency η is integratedd,backCalculated by the formula (1), the internal quantum efficiency etaiAnd alphaiThe internal loss is calculated by formula (2), and the reflectivity R of the integrated reflecting surfaceInverse directionAnd the laser cavity length L is measured, so that the reflectivity of the integrated light-emitting surface is an unknown quantity only.
Step S63: and comparing the non-integrated differential quantum slope with the non-integrated differential quantum slope to obtain the optical power of the integrated laser.
In an embodiment, since the obtained non-integrated differential quantum slope and the non-integrated differential quantum slope have the same physical meaning and are both in the relationship that the inverse of the external quantum efficiency varies with the cavity length, the reflectance of the integrated light-emitting surface and the unknown optical power of the integrated laser can be obtained by comparing the fitted two non-integrated differential quantum slopes and the fitted non-integrated differential quantum slopes according to the formula (6).
In a specific embodiment, as shown in fig. 3, the process of executing step S63 may specifically include the following steps:
step S631: and comparing the non-integrated differential quantum slope with the non-integrated differential quantum slope to obtain the reflectivity of the integrated light-emitting surface.
In one embodiment, the non-integrated differential quantum slope and the non-integrated differential quantum slope are compared to solve for the unknown light-emitting facet reflectivity. It should be noted that, in the embodiment of the present invention, the reflectivity of the light-emitting surface is taken as an example to solve the reflectivity of the light-emitting surface, and in practical applications, the reflectivity of the light-emitting surface may also be known to solve the reflectivity of the light-emitting surface, which is not limited to this.
Step S632: and obtaining the optical power of the integrated laser according to the reflectivity of the integrated light-emitting surface.
In the embodiment of the invention, after the reflectivity of the two mirrors is known, the optical power of the integrated laser, namely the light output quantity of the laser, can be calculated according to the reflectivity. If the reflectivity of the light emitting surface of the laser is determined to be 10% and the transmittance thereof is 90%, the power of the reflecting end of the integrated laser is measured to be 10mW, and the reflectivity of the reflecting surface is 32%, the transmittance thereof is 68%, and the light emitting power can be obtained according to the reflectivity of the light emitting surface, which is (10/0.68) × 0.9-13 mW.
The optical power determination method for the optical transmission analysis of the integrated laser, provided by the embodiment of the invention, respectively fits the non-integrated differential quantum slope of the inverse of the non-integrated external quantum efficiency along with the change of the cavity length and the integrated differential quantum slope of the inverse of the integrated external quantum efficiency along with the change of the cavity length through the non-integrated differential quantum efficiency calculation formula and the integrated differential quantum efficiency calculation formula, and then compares the two slopes to obtain the optical power of the integrated laser.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (7)
1. An optical power determination method for integrated laser optical transmission analysis, comprising:
acquiring optical transmission data;
the optical transmission data includes: the reflectivity of the non-integrated light-emitting surface, the reflectivity of the non-integrated reflecting surface, the reflectivity of the integrated reflecting surface, the cavity length of the laser and the mirror surface loss;
measuring power values of lasers with different cavity lengths at different currents, wherein the lasers with different cavity lengths comprise: non-integrated lasers and integrated lasers;
drawing each current power curve according to the power value of each laser under different currents to obtain the slope of each current power curve;
obtaining the external quantum efficiency of each laser according to the slope of each current power curve;
the external quantum efficiencies include: non-integrated external quantum efficiency and integrated external quantum efficiency;
obtaining the optical power of the integrated laser according to the optical transmission data, the non-integrated differential quantum efficiency calculation formula, the integrated differential quantum efficiency calculation formula and the external quantum efficiency;
the step of obtaining the optical power of the integrated laser according to the optical transmission data, the non-integrated differential quantum efficiency calculation formula, the integrated differential quantum efficiency calculation formula and the external quantum efficiency includes:
fitting a non-integrated differential quantum slope of the inverse non-integrated external quantum efficiency changing along with the cavity length according to each non-integrated external quantum efficiency, the corresponding laser cavity length and a non-integrated differential quantum efficiency calculation formula;
fitting an integrated differential quantum slope of the reciprocal of the integrated external quantum efficiency along with the change of the cavity length according to each integrated external quantum efficiency, the corresponding laser cavity length and integrated change curve and an integrated differential quantum efficiency calculation formula;
and comparing the non-integrated differential quantum slope with the integrated differential quantum slope to obtain the optical power of the integrated laser.
2. The optical power determination method for integrated laser optical transmission analysis of claim 1, wherein the value of the external quantum efficiency of the laser is calculated by the following formula:
wherein,
denotes the external quantum efficiency, K1Represents the slope of the current power curve, h represents the planck constant, v represents the light wave frequency, e represents the electron charge,
indicating the wavelength.
3. The method of claim 1, further comprising, after the step of deriving the respective external quantum efficiencies:
and obtaining the internal quantum efficiency and the internal loss according to the calculation formulas of the non-integrated external quantum efficiency, the laser cavity length and the non-integrated differential quantum efficiency.
4. The method of claim 3, wherein the non-integrated differential quantum efficiency calculation formula is as follows:
wherein,
representing a non-integrated external quantum efficiency,
the internal quantum efficiency is expressed in terms of,
denotes internal loss, R1And R2Respectively representing the reflectivity of the non-integrated reflecting surface and the reflectivity of the non-integrated light-emitting surface, and L representing the cavity length of the laser.
5. The optical power determination method for integrated laser optical transmission analysis of claim 3, wherein the integrated differential quantum efficiency is expressed by the following equation:
wherein,𝜼d,backrepresenting integrated differential quantum efficiency, FbackThe light-out proportionality coefficient is shown,𝜼ithe internal quantum efficiency is expressed in terms of,
which represents the loss of the mirror surface,
represents the internal loss;
taking reciprocal of the integrated differential quantum efficiency to obtain a calculation formula of the integrated differential quantum efficiency as follows:
wherein,𝜼d,backrepresenting integrated differential quantum efficiency, FbackThe light-out proportionality coefficient is shown,𝜼ithe internal quantum efficiency is expressed in terms of,
denotes internal loss, RInverse directionRepresenting the reflectivity, R, of the integrated reflecting surfaceGo outThe reflectivity of the integration light-emitting surface is shown, and L represents the laser cavity length.
6. The method of claim 5, wherein the extraction scaling factor is expressed by the following equation:
wherein,𝜼d,backrepresenting integrated differential quantum efficiency, FbackThe light-out proportionality coefficient is shown,𝜼idenotes internal quantum efficiency, RInverse directionRepresenting the reflectivity, R, of the integrated reflecting surfaceGo outIndicating the reflectivity of the integrating light-emitting surface,
which represents the loss of the mirror surface,
indicating internal loss and L the laser cavity length.
7. The method of claim 1, wherein the step of comparing the non-integrated differential quantum slope with the integrated differential quantum slope to obtain the optical power of the integrated laser comprises:
comparing the non-integrated differential quantum slope with the integrated differential quantum slope to obtain the reflectivity of the integrated light-emitting surface;
and obtaining the optical power of the integrated laser according to the reflectivity of the integrated light-emitting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911295056.3A CN111006853B (en) | 2019-12-16 | 2019-12-16 | Optical power determination method for integrated laser optical transmission analysis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911295056.3A CN111006853B (en) | 2019-12-16 | 2019-12-16 | Optical power determination method for integrated laser optical transmission analysis |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111006853A CN111006853A (en) | 2020-04-14 |
| CN111006853B true CN111006853B (en) | 2021-07-20 |
Family
ID=70114954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911295056.3A Active CN111006853B (en) | 2019-12-16 | 2019-12-16 | Optical power determination method for integrated laser optical transmission analysis |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111006853B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1452284A (en) * | 2003-05-01 | 2003-10-29 | 清华大学 | Distributed feedback semiconductor laser and electric absorption modulator integrated light source and mfg. method |
| CN1848566A (en) * | 2005-04-13 | 2006-10-18 | 松下电器产业株式会社 | Semiconductor laser device, method for manufacturing the same, and optical pickup device using the same |
| CN101061611A (en) * | 2003-10-29 | 2007-10-24 | 美莎诺普有限公司 | Laser and detector device |
| US20090016399A1 (en) * | 2006-04-26 | 2009-01-15 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
| CN102252829A (en) * | 2011-04-25 | 2011-11-23 | 北京大学 | Method for measuring internal quantum efficiency and light extraction efficiency of LED |
| CN109286053A (en) * | 2018-10-09 | 2019-01-29 | 南开大学 | A kind of on piece broadband Terahertz unidirectional transmission unit on combination gradual change super surface and sub-wavelength waveguide |
| CN110289553A (en) * | 2019-06-25 | 2019-09-27 | 中国科学院半导体研究所 | Multi-wavelength silicon substrate iii-v hybrid integrated laser, its array element and preparation method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1365005A (en) * | 2001-07-25 | 2002-08-21 | 中国科学院长春光学精密机械与物理研究所 | Comprehensive measuring method for the optical and electric characters of semiconductor laser |
| CN102628893B (en) * | 2012-04-13 | 2014-12-31 | 大连理工大学 | System and method for measuring photonic integration microwave frequency |
| CN104062575B (en) * | 2014-06-30 | 2017-02-08 | 中国科学院上海微系统与信息技术研究所 | Method for measuring internal quantum efficiency and internal loss of laser |
-
2019
- 2019-12-16 CN CN201911295056.3A patent/CN111006853B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1452284A (en) * | 2003-05-01 | 2003-10-29 | 清华大学 | Distributed feedback semiconductor laser and electric absorption modulator integrated light source and mfg. method |
| CN101061611A (en) * | 2003-10-29 | 2007-10-24 | 美莎诺普有限公司 | Laser and detector device |
| CN1848566A (en) * | 2005-04-13 | 2006-10-18 | 松下电器产业株式会社 | Semiconductor laser device, method for manufacturing the same, and optical pickup device using the same |
| US20090016399A1 (en) * | 2006-04-26 | 2009-01-15 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
| CN102252829A (en) * | 2011-04-25 | 2011-11-23 | 北京大学 | Method for measuring internal quantum efficiency and light extraction efficiency of LED |
| CN109286053A (en) * | 2018-10-09 | 2019-01-29 | 南开大学 | A kind of on piece broadband Terahertz unidirectional transmission unit on combination gradual change super surface and sub-wavelength waveguide |
| CN110289553A (en) * | 2019-06-25 | 2019-09-27 | 中国科学院半导体研究所 | Multi-wavelength silicon substrate iii-v hybrid integrated laser, its array element and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| Numerical design and investigation of an optically pumped 1.55 μm single quantum dot photonic crystal-based laser;Sonia Eivazi;《Photonics and Nanostructures》;20180919;第42-46页 * |
| 大功率低阈值半导体激光器研究;刘梦涵;《中国激光》;20160531;第43卷(第5期);第1-6页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111006853A (en) | 2020-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ciminelli et al. | High performance InP ring resonator for new generation monolithically integrated optical gyroscopes | |
| Belt et al. | Erbium-doped waveguide DBR and DFB laser arrays integrated within an ultra-low-loss Si 3 N 4 platform | |
| Li et al. | High-power thulium lasers on a silicon photonics platform | |
| US20160012176A1 (en) | Methods for designing photonic devices | |
| CA1084742A (en) | Optical fiber waveguide having minimum modal dispersion | |
| Cibula et al. | Low-loss semi-reflective in-fiber mirrors | |
| Yang et al. | Integration of an O-band VCSEL on silicon photonics with polarization maintenance and waveguide coupling | |
| Chang et al. | Fano resonances in integrated silicon Bragg reflectors for sensing applications | |
| WO2017049276A2 (en) | Methods for designing photonic devices | |
| Zhou et al. | High-gain erbium silicate waveguide amplifier and a low-threshold, high-efficiency laser | |
| CN111006853B (en) | Optical power determination method for integrated laser optical transmission analysis | |
| CN111220356B (en) | Optical power determination method for integrated laser optical transmission analysis | |
| CN113206444A (en) | Tunable laser | |
| CN212304194U (en) | 509nm laser system excited by cesium atom in rydberg state | |
| CN100394297C (en) | Coherent light source and production method therefor | |
| He et al. | Reflection Airy distribution of a Fabry-Pérot resonator and its application in waveguide loss measurement | |
| Kiani et al. | Silicon-thulium hybrid microdisk lasers with low threshold and wide emission wavelength range | |
| Sefunc et al. | High index contrast potassium double tungstate waveguides towards efficient rare-earth ion amplification on-chip | |
| Jia et al. | Waveguide integrated GaN distributed Bragg reflector cavity using low‐cost nanolithography | |
| CN112271550A (en) | Wavelength-locked semiconductor laser | |
| CN108832484A (en) | A method of enhancing association photon pair source performance | |
| Dannecker et al. | Trimming method for a high-yield manufacturing of high-efficiency diffraction gratings | |
| Guo et al. | Broadband, high polarization extinction ratio, and mirror-integrated superluminescent diode for light source of Si photonics | |
| TW200423501A (en) | A technique for stabilizing laser wavelength and phase | |
| Sumpf et al. | 5,000 h reliable operation of 785nm dual-wavelength DBR-RW diode lasers suitable for Raman spectroscopy and SERDS |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230926 Address after: 215614 Building D, Fenghuang science and Innovation Park, Fenghuang Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee after: SUZHOU JUZHEN PHOTOELECTRIC Co.,Ltd. Address before: 215000 No.2, Yangyun Road, Loufeng, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: Suzhou chenrui photoelectric Co.,Ltd. |
|
| TR01 | Transfer of patent right |