CN212304194U - 509nm laser system excited by cesium atom in rydberg state - Google Patents
509nm laser system excited by cesium atom in rydberg state Download PDFInfo
- Publication number
- CN212304194U CN212304194U CN202020897895.4U CN202020897895U CN212304194U CN 212304194 U CN212304194 U CN 212304194U CN 202020897895 U CN202020897895 U CN 202020897895U CN 212304194 U CN212304194 U CN 212304194U
- Authority
- CN
- China
- Prior art keywords
- laser
- grating
- laser diode
- light
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model discloses a 509nm laser system is aroused to cesium atom rydberg attitude, include: a 509nm laser diode, a collimating lens and a grating which are arranged along a light path in sequence; the light beam emitted by the 509nm laser diode is collimated by the collimating lens to form collimated light, and the collimated light enters the grating; on one hand, the grating reflects part of collimated light back to the 509nm laser diode along the direction opposite to the light path to form a film-selecting external cavity; on the other hand, the grating diffracts the remaining part of the collimated light to form laser light.
Description
Technical Field
The utility model relates to a laser technical field, quantum sensing and measurement field. And more particularly to a cesium atom rydberg state excited 509nm laser system.
Background
The quantum interference technology based on the atomic system can obtain precise spectrum, realize precise measurement of physical constants or physical quantities, and is the development direction of the next generation measurement technology. In recent years, the preparation of neutral atoms in the rydberg state has been achieved based on the development of laser technology. The narrow-linewidth precise spectrum can be obtained based on the rydberg-state atomic quantum interference effect, further, the precise measurement of an electrostatic field or a microwave electric field is realized, the self calibration can be realized, and the long-term stability is better. All of the above applications require a laser system to prepare the atoms to the rydberg state.
The scheme of the cesium atom rydberg state excitation laser system mainly comprises two schemes: (1) the 1560nm laser and the 1077nm laser are respectively used for amplifying sum frequency to obtain 638nm laser, then frequency doubling is carried out to obtain 319nm ultraviolet laser, single step excitation is used for realizing the preparation of the rydberg state of atoms, the scheme can be used for obtaining the laser line width of kHz magnitude, and the system is complex; (2) the 509nm laser is obtained by utilizing 1018nm laser frequency doubling, the 510nm laser frequency is locked by utilizing a sideband frequency locking technology of an optical cavity, and the rydberg state preparation is realized by utilizing two-step excitation in cooperation with 852nm laser. The german Toptica model TA-SHG110 laser is a typical representation of a 509nm laser system, which can output 509nm laser light with typical laser power of hundreds of milliwatts and line width MHz. The two schemes have complex technology, huge system and the manufacturing cost of about million RMB.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a 509nm laser system is aroused to cesium atom rydberg attitude to the not enough of prior art.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
the utility model provides a 509nm laser system is aroused to cesium atom rydberg attitude, include: a 509nm laser diode, a collimating lens and a grating which are arranged along a light path in sequence;
the collimating lens is used for collimating the light beam emitted by the 509nm laser diode into collimated light;
the grating is used for reflecting a part of collimated light back to the 509nm laser diode, so that the 509nm laser diode and the grating form a film-selecting external cavity; and diffracts another portion of the collimated light into outgoing laser light.
Optionally, the laser system further includes: and the reflector is arranged behind the grating along a light path and is used for adjusting the emergent angle of the laser.
Optionally, the laser system further includes: and the current source control module is electrically connected with the 509nm laser diode and is used for finely adjusting the wavelength of a light beam emitted by the 509nm laser diode.
Optionally, the surface of the collimating lens is plated with an antireflection dielectric film.
Optionally, the grating surface is plated with a high reflection film.
Optionally, the surface of the reflector is plated with a high reflection film.
Optionally, the mirror is a plane total reflection mirror, a concave mirror, or a convex mirror.
The utility model has the advantages as follows:
the utility model aims at providing a simple 509nm laser system, compare the complicated 509nm laser instrument of conventionality, the device system can obtain the performance parameter comparable with conventional laser system under the prerequisite of greatly reduce cost and system complexity, and this scheme allows to realize the integration of large-scale chip scale; the utility model discloses a technical scheme of grating exocoel feedback, the line width of narrowing laser diode output laser obtains the 509nm laser of wavelength continuous adjustment. Typical technical indicators are: the laser wavelength tuning range is nanometer, the line width MHz and the power are more than 80mW, the index requirements of cold atom physics and atom molecule laser spectrum to a 509nm laser system can be met, and the manufacturing cost is less than 10 ten thousand RMB. Compared with a conventional complex 509nm laser system, the device system can obtain performance parameters comparable to those of the conventional laser system on the premise of greatly reducing the cost and the system complexity, and meanwhile, the scheme can realize large-scale chip scale integration.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 shows a laser system structure diagram according to an embodiment of the present invention.
Fig. 2 shows a graph of laser wavelength versus current for an embodiment of the present invention.
Fig. 3 shows a graph of laser system output power versus current according to an embodiment of the present invention.
Fig. 4 illustrates a continuous frequency tuning range of a laser system by applying a triangular wave to the laser system, according to an embodiment of the present invention.
Fig. 5 is a graph showing laser frequency detuning versus spectral line for laser light output by a laser system according to an embodiment of the present invention.
Fig. 6 shows a graph of laser frequency detuning versus spectral line for laser light output by a laser system according to an embodiment of the present invention.
Fig. 7 is a graph showing laser frequency detuning versus spectral line for laser light output by a laser system according to an embodiment of the present invention.
Fig. 8 is a graph showing laser frequency detuning versus spectral line for laser light output by a laser system according to an embodiment of the present invention.
Reference numeral, 1, 509nm laser diode; 2. a collimating lens; 3. a grating; 4. a mirror.
Detailed Description
In order to make the technical solutions and advantages of the present invention clearer, the following will describe the embodiments of the present invention in further detail with reference to the accompanying drawings.
Examples
Example 1
As shown in fig. 1, a cesium atom rydberg state excited 509nm laser system includes a 509nm laser diode 1, a collimating lens 2, and a grating 3, which are sequentially disposed along a light path;
the collimating lens 2 is used for collimating the light beam emitted by the 509nm laser diode 1 into collimated light;
the grating 3 is used for reflecting a part of collimated light back to the 509nm laser diode 1, so that the 509nm laser diode 1 and the grating 3 form a film-selecting external cavity; and diffracts another portion of the collimated light into outgoing laser light.
Optionally, the laser system further includes: and the current source control module is electrically connected with the 509nm laser diode and is used for finely adjusting the wavelength of a light beam emitted by the 509nm laser diode.
Specifically, the system further includes: and the reflecting mirror 4 is arranged behind the grating 3 along a light path and is used for adjusting the emergent angle of the laser.
The collimating lens 2 can be a focusing lens; the reflecting mirror 4 is one of a plane total reflection mirror, a concave mirror or a convex mirror.
In an alternative embodiment, as shown in fig. 1, a cesium atom rydberg state excites a 509nm laser system, and a 509nm laser diode 1 outputs a light beam to a focusing lens 2 to realize light beam collimation; the surface of the focusing lens 2 is plated with an anti-reflection dielectric film under the condition of vertical incidence, and the anti-reflection dielectric film covers the laser wavelength of 500-520 nm, so that the loss of the inner cavity of the laser can be reduced; (vertical incidence condition more can reduce the loss of laser instrument inner chamber, and other incident conditions are applicable certainly the utility model discloses a laser system, the utility model discloses do not do the injecing to this), parallel beam after the collimation is through high reflection grating 3, selects the membrane exocoel by high reflection grating 3 and 509nm laser diode 1 formation. The surface of the high-reflection grating 3 is plated with a high-reflection film with an incident angle of 45 degrees, and the high-reflection film covers the laser wavelength of 500-520 nm; (the 45 degrees are only limited for the convenience of illustration in combination with the figure, and other angles can also be applicable to the laser system of the utility model, the utility model does not limit the same), the laser output by the high reflection grating 3 is output after being reflected by the plane total reflection mirror 4, and the stable and tunable 509nm laser is obtained; the surface of the plane total reflection mirror 4 is plated with a 45-degree incident angle high reflection film (the 45 degree is only limited for the convenience of illustration in combination, other angles can also be applicable to the laser system of the utility model, the invention is not limited to this), and the laser wavelength is covered by 500 nm-520 nm;
specifically, the system includes: and the power supply flow control module is electrically connected with the 509nm laser diode 1 and is used for finely adjusting the wavelength of an emission beam of the 509nm laser diode 1.
In an alternative embodiment, as shown in fig. 2, the cesium atom rydberg state excites a 509nm laser system, the laser wavelength is controlled by a current source, a precision wavelength meter measures the laser wavelength, and a typical laser wavelength 509.52nm-509.65nm is output to cover a plurality of rydberg atom quantum states.
As shown in FIG. 3, the cesium atom rydberg state excites a 509nm laser system, and the power change of the system is measured by a power meter by controlling the current source to change in the range of 0-230mA, as shown in FIG. 3. As can be seen, the 509nm laser system has a threshold current of around 50mA, an output power of 80mW, and a power range satisfying the power requirement for the atomic preparation of the rydberg state (typically 30 mW).
As shown in fig. 4, the cesium atom rydberg state excites a 509nm laser system, and a continuous frequency tuning range of the 509nm rydberg excitation system is obtained by applying a triangular wave to continuously scan a 509nm laser.
As shown in fig. 5 and 6, the cesium atom has a rydberg state excitation 509nm laser system, based on which finely split EIT spectra of the rydberg states can be achieved (corresponding to 50D in FIG. 5) with two-step excitation to prepare rydberg state atoms in cooperation with another 852nm laser5/2State and 50S in FIG. 63/2State), the simple 509nm rydberg excitation system meets the research requirements of EIT and cesium atom hyperfine structures.
As shown in FIGS. 7 and 8, the cesium atom rydberg state excites a 509nm laser system, and the 6S in FIG. 7 can be obtained by increasing the scanning signal and scanning the frequency of the laser system1/2(F＝4)→6P3/2EIT signal of (F' ═ 3,4,5) → 50D and 6S in fig. 81/2(F＝4)→6P3/2EIT signal of (F' ═ 3,4,5) → 50S.
In summary, the cesium atomic rydberg state excitation 509nm laser system of the embodiment has output laser parameters completely meeting the requirements for preparing atomic rydberg states, and has good frequency and power tuning.
Obviously, the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it is obvious for those skilled in the art to make other variations or changes based on the above descriptions, and all the embodiments cannot be exhausted here, and all the obvious variations or changes that belong to the technical solutions of the present invention are still in the protection scope of the present invention.
Claims (7)
1. A cesium atom rydberg state excitation 509nm laser system, comprising: a 509nm laser diode, a collimating lens and a grating which are arranged along a light path in sequence;
the collimating lens is used for collimating the light beam emitted by the 509nm laser diode into collimated light;
the grating is used for reflecting a part of collimated light back to the 509nm laser diode, so that the 509nm laser diode and the grating form a film-selecting external cavity; and diffracts another portion of the collimated light into outgoing laser light.
2. The system of claim 1, further comprising: and the reflector is arranged behind the grating along a light path and is used for adjusting the emergent angle of the laser.
3. The system of claim 1, further comprising: and the current source control module is electrically connected with the 509nm laser diode and is used for finely adjusting the wavelength of a light beam emitted by the 509nm laser diode.
4. The system of claim 1, wherein the collimating lens is coated with an antireflective dielectric film.
5. The system of claim 1, wherein the grating surface is coated with a highly reflective film.
6. The system of claim 2, wherein the mirror surface is coated with a highly reflective film.
7. The system of claim 2, wherein the mirror is a flat all-mirror, a concave mirror, or a convex mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020897895.4U CN212304194U (en) | 2020-05-25 | 2020-05-25 | 509nm laser system excited by cesium atom in rydberg state |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020897895.4U CN212304194U (en) | 2020-05-25 | 2020-05-25 | 509nm laser system excited by cesium atom in rydberg state |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212304194U true CN212304194U (en) | 2021-01-05 |
Family
ID=73969611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020897895.4U Active CN212304194U (en) | 2020-05-25 | 2020-05-25 | 509nm laser system excited by cesium atom in rydberg state |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212304194U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114069370A (en) * | 2021-11-10 | 2022-02-18 | 北京量子信息科学研究院 | Atomic rydberg state excitation method and laser system |
-
2020
- 2020-05-25 CN CN202020897895.4U patent/CN212304194U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114069370A (en) * | 2021-11-10 | 2022-02-18 | 北京量子信息科学研究院 | Atomic rydberg state excitation method and laser system |
| CN114069370B (en) * | 2021-11-10 | 2024-05-10 | 北京量子信息科学研究院 | Atomic Redberg state excitation method and laser system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7646546B1 (en) | Anamorphic optical system providing a highly polarized laser output | |
| CN102377107B (en) | High-stability light source system and method of manufacturing | |
| CN101969178A (en) | External cavity feedback laser generation method and laser | |
| CN102709799A (en) | Laser device with continuously tunable broadband | |
| US20150288142A1 (en) | External-cavity tunable laser with flexible wavelength grid tuning function | |
| CN110112652A (en) | Extenal cavity tunable laser device and wavelength tuning method | |
| CN111525379A (en) | Broadband topology load tunable Laguerre Gaussian optical parameter oscillator | |
| Zhang et al. | Continuous wavelength tuning in micromachined Littrow external-cavity lasers | |
| CN105591283A (en) | Tuning method of grating external cavity semiconductor laser wavelength | |
| CN212304194U (en) | 509nm laser system excited by cesium atom in rydberg state | |
| CN105119142A (en) | External cavity tuning laser | |
| Laurila et al. | Tunable external-cavity diode laser at 650 nm based on a transmission diffraction grating | |
| CN117039604A (en) | Double interference filter special angle composite feedback quantity adjustable semiconductor laser | |
| CN101566776A (en) | Method for tuning laser output wavelength based on self-mixing effect | |
| CN111129951A (en) | Wide-tuning external cavity semiconductor laser cavity based on grating and MEMS (micro-electromechanical systems) reflector | |
| CN109856823A (en) | A kind of wavelength-swept source system and its wavelength tuning method | |
| CN115117732A (en) | Semiconductor laser with tunable external cavity | |
| Blume et al. | 633-nm single-mode master-oscillator power-amplifier module | |
| Zhu et al. | 1.7 THz tuning range pivot-point-independent mode-hop-free external cavity diode laser | |
| CN114967407B (en) | Integrated optical system for small optical pumping beam type atomic clock | |
| CN104953466A (en) | Laser light source and design method thereof | |
| CN117895327B (en) | Tunable interference light source and interferometer based on high-gain long-axis polarization waveguide | |
| CN215989636U (en) | Narrow linewidth laser beam splitting device | |
| CN114963995B (en) | Michelson laser, implementation method thereof and displacement measurement method | |
| Bhatia et al. | A single-mode semiconductor diode laser operating in the strong optical feedback regime and tunable within the D1 line of the Cs atom |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |