CN110112652A - Extenal cavity tunable laser device and wavelength tuning method - Google Patents
Extenal cavity tunable laser device and wavelength tuning method Download PDFInfo
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- CN110112652A CN110112652A CN201910410976.9A CN201910410976A CN110112652A CN 110112652 A CN110112652 A CN 110112652A CN 201910410976 A CN201910410976 A CN 201910410976A CN 110112652 A CN110112652 A CN 110112652A
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- collimation lens
- balzed grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
Abstract
The present invention provides a kind of extenal cavity tunable laser device and wavelength tuning methods, belong to field of laser device technology.Wherein, extenal cavity tunable laser device, comprising: semiconductor gain chip, the first collimation lens, balzed grating, and the reflective mirror opposite with balzed grating,；Semiconductor gain chip, the first collimation lens and balzed grating, are located in same optical axis, and there are the angles that one is greater than 0 for the grating planar of balzed grating, and optical axis；Wherein, semiconductor gain chip from left to right successively includes sampled grating area, phase modulation area, gain region and the first electrode being covered each by above sampled grating area, phase modulation area, gain region, second electrode and third electrode；Balzed grating, and reflecting mirror are both secured in mechanical structure that is electronic or manually controlling.The present invention realizes laser tuning a wide range of to wavelength, quick, fine, and can narrow output wavelength.
Description
Technical field
The present invention relates to field of laser device technology more particularly to a kind of extenal cavity tunable laser devices and wavelength tuning method.
Background technique
Tunable narrow-linewidth laser is in coherent light communication, laser radar, precise interference measurement, dense wave division multipurpose, gas
The fields such as bulk concentration detection have a wide range of applications.Especially as the increase of message capacity, coherent light communication needs to provide bigger
Bandwidth and transmission speed, this requirement just to the line width of laser and tuned speed is higher and higher.Therefore, to high tuning
The demand of the semiconductor laser of speed, big wavelength tuning range and narrow linewidth is higher and higher.
Tunable laser can be divided into single-chip integration formula and external cavity type two major classes at present.Single-chip integration mainly includes distribution cloth
Glug reflection (DBR), sampled-grating DBR, ultraphotic grid DBR and array DBR etc..The integrated level of this kind of lasers is high, and size is small,
Tuned speed is fast, but structure is complicated, and manufacture craft difficulty is larger, and line width is not able to satisfy the requirement of coherent light communication, thus
The application being limited in 100Gbit/s and high speed coherent optical communication system.External cavity laser mainly includes from structure
Littman, Littrow and Double-edge type structure, due to increasing the reason of exocoel, these three structures can realize a wide range of wave
Output linewidth is narrowed while long tuning, this outside cavity gas laser may be implemented wavelength of the line width lower than 100kHZ and export.But by
Be tuned in using mechanical structure, thus will receive vibration influence simultaneously tuned speed it is slow.
Summary of the invention
(1) technical problems to be solved
The present invention provides a kind of extenal cavity tunable laser device and wavelength tuning methods, mentioned above at least partly to solve
Out the technical issues of.
(2) technical solution
According to an aspect of the invention, there is provided a kind of extenal cavity tunable laser device based on Littman structure, packet
It includes:
Successively sequentially-placed semiconductor gain chip, the first collimation lens, balzed grating, and glare with described
The opposite reflective mirror of grid；The semiconductor gain chip, the first collimation lens and balzed grating, are located in same optical axis, and institute
There are the angles that one is greater than 0 for the grating planar and the optical axis for stating balzed grating,；Wherein, the semiconductor gain chip is from a left side
It successively including sampled grating area, phase modulation area, gain region and is covered each by the right side in the sampled grating area, phase modulation area, gain
First electrode, second electrode and third electrode above area；The balzed grating, and reflecting mirror are both secured to electronic or hand
In the mechanical structure of dynamic control.
In some embodiments, first collimation lens, balzed grating, and reflective mirror composition are described based on Littman
The exocoel of the extenal cavity tunable laser device of structure.
In some embodiments, the extenal cavity tunable laser device based on Littman structure further include:
Second collimation lens, third collimation lens, optical fiber, heat sink and semiconductor cooler；Second collimation lens
It is located in the optical path of the zero level primary maximum of the balzed grating, diffraction light with third collimation lens；The optical fiber is located at the third
The Coupling point position of collimation lens；The semiconductor gain chip, the first collimation lens, balzed grating, the second collimation lens with
And third collimation lens is respectively positioned on the heat sink top, it is described heat sink above the semiconductor cooler.
In some embodiments, second collimation lens, third collimation lens, optical fiber are used for the balzed grating,
The zero level primary maximum of diffraction light exports.
According to another aspect of the present invention, providing the above-mentioned provided exocoel based on Littman structure of one kind can
The wavelength tuning method of tuned laser, which comprises
By the third electrode injection electric current above the gain region of semiconductor gain chip, makes the gain region that laser occur and swash
It penetrates；
The laser projected on the left of the gain region injects semiconductor gain chip through the phase modulation area of semiconductor gain chip
Optical grating reflection is sampled in sampled grating area, obtained reflectance spectrum is comb spectrum；
The directional light that the laser being emitted on the right side of the gain region is obtained through the first collimation lens is incident on the light of balzed grating,
Diffraction occurs for grid plane, generates diffraction light；
Level-one primary maximum in the diffraction light injects the surface of reflective mirror, by adjusting the reflective mirror and balzed grating,
Preset wavelength in the level-one primary maximum of the diffraction light is reflected back the balzed grating, by the angle of plane, and by described
Balzed grating, is reflected back in the semiconductor gain chip；
The gain region is overlapped the light that the reflected light of the balzed grating, and the sampled grating area are reflected back
Part amplifies, and the light of the intersection is after multiple oscillation is amplified in the semiconductor gain chip and exocoel through the
Two collimation lenses and the coupling of third collimation lens are output in optical fiber；
Adjust the reflection angle of the reflective mirror or the tilt angle of balzed grating, and the sampled grating area first
The Injection Current of electrode tentatively tunes wavelength with changing the wavelength of the light of the intersection；
The Injection Current for adjusting second electrode above the phase modulation area, further tunes wavelength.
According to a further aspect of the invention, a kind of extenal cavity tunable laser device based on Littrow structure is provided, is wrapped
It includes:
Successively sequentially-placed semiconductor gain chip, the first collimation lens and balzed grating,；The semiconductor increases
Beneficial chip, the first collimation lens and balzed grating, are located in same optical axis, and the grating planar of the balzed grating, with it is described
There are the angles that one is greater than 0 for optical axis；Wherein, the semiconductor gain chip from left to right successively includes sampled grating area, adjusts
Phase region, gain region and the first electrode being covered each by above the sampled grating area, phase modulation area, gain region, second electrode
And third electrode；The balzed grating, is fixed in mechanical structure that is electronic or manually controlling.
In some embodiments, first collimation lens and balzed grating, composition are described outer based on Littrow structure
The exocoel of chamber adjustable laser.
In some embodiments, the extenal cavity tunable laser device based on Littrow structure further include:
Second collimation lens, third collimation lens, optical fiber, heat sink and semiconductor cooler；Second collimation lens
It is located in the optical path of the zero level primary maximum of the balzed grating, diffraction light with third collimation lens；The optical fiber is located at the third
The Coupling point position of collimation lens；The semiconductor gain chip, the first collimation lens, balzed grating, the second collimation lens with
And third collimation lens is respectively positioned on the heat sink top, it is described heat sink above the semiconductor cooler.
In some embodiments, second collimation lens, third collimation lens, optical fiber are for spreading out the balzed grating,
Penetrate the zero level primary maximum output of light.
According to another aspect of the present invention, a kind of extenal cavity tunable laser device based on Littrow structure is provided
Wavelength tuning method, which comprises
By the third electrode injection electric current above the gain region of semiconductor gain chip, makes the gain region that laser occur and swash
It penetrates；
The phase modulation area through semiconductor gain chip of the laser projected on the left of the gain region enters semiconductor gain chip
Sampled grating area in be sampled grating and reflected, obtained reflectance spectrum is comb spectrum；
The directional light that the laser being emitted on the right side of the gain region is obtained through the first collimation lens is incident on the light of balzed grating,
Diffraction occurs for grid plane, generates diffraction light；
The inclination angle for adjusting the balzed grating, grating planar, by the preset wavelength in the level-one primary maximum of the diffraction light
It is reflected back in semiconductor gain chip；
The gain region is overlapped the light that the reflected light of the balzed grating, and the sampled grating area are reflected back
Part amplifies, and the light of the intersection passes through second after multiple oscillation is amplified in semiconductor gain chip and exocoel
Collimation lens and the coupling of third collimation lens are output in optical fiber；
The Injection Current of first electrode above the tilt angle and the sampled grating area of the balzed grating, is adjusted,
To change the wavelength of the light of the intersection, wavelength is tentatively tuned；
The Injection Current for adjusting second electrode above the phase modulation area, further tunes wavelength.
(3) beneficial effect
It can be seen from the above technical proposal that extenal cavity tunable laser device of the present invention and wavelength tuning method at least have with
One of lower beneficial effect or in which a part:
(1) extenal cavity tunable laser device and wavelength tuning method provided by the invention can control reflective mirror by changing
Change the reflection angle of reflective mirror or the inclination angle of balzed grating, and sampling light with the voltage of the mechanical structure of balzed grating,
The electric current injected above grid region carrys out tuning wavelength, therefore the quick tuning of wavelength may be implemented；
(2) extenal cavity tunable laser device and wavelength tuning method provided by the invention introduce sampled-grating and glare
Grid, and the wave-length coverage of the diffraction spectra of the reflectance spectrum of sampled-grating and balzed grating, covering is very big, therefore may be implemented a wide range of
Wavelength tuning, in conjunction with adjust phase modulation area above Injection Current, the further fine tuning of wavelength may be implemented；
(3) extenal cavity tunable laser device and wavelength tuning method provided by the invention by sampled grating area and glare
The common modeling of grid acts on, and according to cursor effect, narrowing for line width may be implemented, and the introducing of exocoel increases entire resonance
The chamber of chamber is long to realize further narrowing for line width；
(4) extenal cavity tunable laser device and wavelength tuning method provided by the invention, can be by only changing sampled-grating
A condition in area's Injection Current and balzed grating, inclination angle realizes the small range of tuning of wavelength, avoids and dodges to control
The frequent use of the mechanical structure of credit grating, to reduce the influence shaken to laser performance；
(5) extenal cavity tunable laser device provided by the invention, by placing chip gain, collimation lens, balzed grating,
It is same it is heat sink on, and will be heat sink, be placed on same semiconductor cooler, the entirety control to laser temperature may be implemented
System avoids influence of the temperature fluctuation to cavity length of the resonator chamber, and then influences the stability of output wavelength.
Detailed description of the invention
Fig. 1 is the top view of the extenal cavity tunable laser device provided in an embodiment of the present invention based on Littman structure；
Fig. 2 is the main view of the extenal cavity tunable laser device provided in an embodiment of the present invention based on Littman structure；
Fig. 3 is the wavelength tuning side of the extenal cavity tunable laser device provided in an embodiment of the present invention based on Littman structure
The flow chart of method；
Fig. 4 provides the top view of the extenal cavity tunable laser device based on Littrow structure for the embodiment of the present invention；
Fig. 5 is the wavelength tuning side of the extenal cavity tunable laser device provided in an embodiment of the present invention based on Littrow structure
The flow chart of method.
In above-mentioned attached drawing, appended drawing reference meaning is specific as follows:
1- semiconductor gain chip；The first collimation lens of 2-；3- balzed grating,；4- reflective mirror；The second collimation lens of 5-；6-
Third collimation lens；7- optical fiber；8- is heat sink；9- semiconductor cooler；The sampled grating area 10-；11- phase modulation area；The gain region 12-；
13- first electrode；14- second electrode；15- third electrode.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
According to an aspect of the invention, there is provided a kind of extenal cavity tunable laser device based on Littman structure, such as schemes
Shown in 1 and Fig. 2, comprising:
Successively sequentially-placed semiconductor gain chip 1, the first collimation lens 2, balzed grating, 3 and and balzed grating,
3 opposite reflective mirrors 4；Semiconductor gain chip 1, the first collimation lens 2 and balzed grating, 3 are located in same optical axis, and dodge
There are the angles that one is greater than 0 for the grating planar and optical axis of credit grating 3；Wherein, semiconductor gain chip 1 is from left to right successively wrapped
It includes sampled grating area 10, phase modulation area 11, gain region 12 and is covered each by the sampled grating area 10, phase modulation area 11, gain
First electrode 13, second electrode 14 and the third electrode 15 of 12 top of area；Balzed grating, 3 and reflecting mirror 4 are both secured to electronic
Or in the mechanical structure manually controlled.
Extenal cavity tunable laser device provided by the invention based on Littman structure can control reflective mirror by changing
Change the reflection angle of reflective mirror or the inclination angle of balzed grating, and sampling light with the voltage of the mechanical structure of balzed grating,
The electric current injected above grid region carrys out tuning wavelength, therefore the quick tuning of wavelength may be implemented, and introduce sampled-grating and
Balzed grating, and the wave-length coverage of the diffraction spectra of the reflectance spectrum of sampled-grating and balzed grating, covering is very big, therefore may be implemented
The further fine tuning of wavelength may be implemented in conjunction with the Injection Current adjusted above phase modulation area in large-scale wavelength tuning.
In the present embodiment, the first collimation lens 2, balzed grating, 3 and reflective mirror 4 form the outer of the tunable laser
Chamber.
It is acted on by the common modeling of sampled grating area and balzed grating, according to cursor effect, the pressure of line width may be implemented
Narrow, along with the introducing of exocoel, the chamber for increasing overall resonance chamber is long, realizes further narrowing to line width.
In the present embodiment, should extenal cavity tunable laser device based on Littman structure further include the second collimation lens 5,
Third collimation lens 6, optical fiber 7, heat sink 8 and semiconductor cooler 9；Wherein, the second collimation lens 5 and third collimation lens 6
In the optical path of the zero level primary maximum of 3 diffraction light of balzed grating,；Optical fiber 7 is located at the Coupling point position of third collimation lens 6；Half
Conductor chip gain 1, the first collimation lens 2, balzed grating, 3, the second collimation lens 5 and third collimation lens 6 are respectively positioned on heat
Heavy 8 top, heat sink 8 are located at 9 top of semiconductor cooler.Wherein, the second collimation lens 5, third collimate saturating 6 mirror, optical fiber 7 is used for
For users to use by the zero level primary maximum output of 3 diffraction light of balzed grating,.
By by chip gain, collimation lens, balzed grating, be placed on it is same it is heat sink on, and will be heat sink, be placed on same
On semiconductor cooler, the entirety control to laser temperature may be implemented, avoid influence of the temperature fluctuation to cavity length of the resonator chamber,
And then influence the stability of output wavelength.
In the present embodiment, the rear and front end of semiconductor gain chip 1 is coated with anti-reflection film, and balzed grating, 3 is to be fixed on
In rotatable mechanical structure, which can be electronic be also possible to manually；Reflective mirror 4, which can be, is fixed on electricity
Reflective mirror on dynamic or armstrong's patent platform, is also possible to MEMS mirror, the rotation of certain angle can be done around an axis.
In the present embodiment, the size of current of sampled grating area injection or the inclination angle of balzed grating, can only be changed,
It can realize wavelength tuning, but for both changing just, such tuning can only realize relatively small-scale wave
Long tuning, therefore the extenal cavity tunable laser device provided by the invention based on Littman structure, can be by only changing sampling light
A condition in grid region Injection Current and balzed grating, inclination angle, realizes small range of wavelength tuning, avoids to control
The frequent use of the mechanical structure of balzed grating, to reduce the influence shaken to laser performance.
According to the above-mentioned provided extenal cavity tunable laser device based on Littman structure, the present invention provides one kind should
The wavelength tuning method of extenal cavity tunable laser device, as shown in figure 3, this method comprises the following steps:
Third electrode injection electric current above the gain region of semiconductor gain chip is made gain region occur to swash by step S1
Lase；
The phase modulation area through semiconductor gain chip of step S2, the laser that gain region left side is projected enter semiconductor gain core
It is sampled optical grating reflection in the sampled grating area of piece, obtained reflectance spectrum is comb spectrum；
Step S3, the directional light that the laser that gain region right side is emitted is obtained through the first collimation lens are incident on balzed grating,
Diffraction occurs for grating planar, generates diffraction light；
Step S4, the level-one primary maximum in diffraction light inject the surface of reflective mirror, pass through and adjust reflecting mirror and balzed grating,
Preset wavelength in the level-one primary maximum of diffraction light is reflected back balzed grating, and is reflected by balzed grating, by the angle of plane
It returns in semiconductor gain chip；
Step S5, the intersection of the light that the reflected light of balzed grating, and sampled grating area are reflected back by gain region into
Row amplification, the light of intersection is after multiple oscillation is amplified in semiconductor gain chip and exocoel through the second collimation lens and the
The coupling of three collimation lenses is output in optical fiber；
Step S6 adjusts the Injection Current of first electrode above the reflection angle and sampled grating area of reflective mirror, to change
The wavelength for becoming the light of intersection, tentatively tunes wavelength；
Step S7 adjusts the Injection Current of second electrode above phase modulation area, is further tuned to wavelength.
The wavelength tuning method of extenal cavity tunable laser device provided by the invention based on Littman structure, can pass through
Change the voltage of the mechanical structure of control reflective mirror and balzed grating, to change the reflection angle of reflective mirror and inclining for balzed grating,
The electric current injected above oblique angle and sampled grating area carrys out tuning wavelength, therefore the quick tuning of wavelength may be implemented；Sample light
The wave-length coverage of the diffraction spectra covering of the reflectance spectrum and balzed grating, of grid is very big, therefore large-scale wavelength tuning may be implemented,
In conjunction with the Injection Current adjusted above phase modulation area, the further fine tuning of wavelength may be implemented；By sampled grating area and
The common modeling of balzed grating, acts on, and according to cursor effect, may be implemented narrowing for line width, and the introducing of exocoel increase it is whole
The chamber of body resonant cavity is long, realizes further narrowing for line width.
In the present embodiment, the wavelength tuning method of the extenal cavity tunable laser device based on Littman structure is somebody's turn to do in step
Before S4, further includes:
Zero level primary maximum in diffraction light is output to light by the effect coupling of the second collimation lens and third collimation lens
In fibre, output is for users to use.
In step s 4, change the folder of reflecting mirror Yu balzed grating, plane especially by mirror drive voltage is changed
Angle selects desired wavelength in the level-one primary maximum in diffraction light, is reflected back in semiconductor gain chip.
In the present embodiment, the size of current of sampled grating area injection or the inclination of balzed grating, can also only be changed
Angle, so that it may realize wavelength tuning, but for both changing just, such tuning can only be realized relatively small-scale
Wavelength tuning, therefore the extenal cavity tunable laser device wavelength tuning method provided by the invention based on Littoman structure, can be with
By only changing a condition in sampled grating area Injection Current and balzed grating, inclination angle, small range of wavelength tune is realized
It is humorous, the frequent use of the mechanical structure to control balzed grating, is avoided, to reduce the influence shaken to laser performance
According to another aspect of the present invention, a kind of extenal cavity tunable laser device based on Littrow structure is provided, such as
Shown in Fig. 4, comprising:
Successively sequentially-placed semiconductor gain chip 1, the first collimation lens 2, balzed grating, 3；Semiconductor gain core
Piece 1, the first collimation lens 2 and balzed grating, 3 are located in same optical axis, and the grating planar of balzed grating, 3 and optical axis exist
One angle greater than 0；Wherein, semiconductor gain chip 1 from left to right successively includes sampled grating area 10, phase modulation area 11, increases
Beneficial area 12 and the 13, second electricity of first electrode being covered each by above the sampled grating area 10, phase modulation area 1, gain region 12
Pole 14 and third electrode 15；Balzed grating, 3 is fixed in mechanical structure that is electronic or manually controlling.
Extenal cavity tunable laser device provided by the invention based on Littrow structure can control reflective mirror by changing
Change the electric current injected above the inclination angle and sampled grating area of balzed grating, with the voltage of the mechanical structure of balzed grating,
Carry out tuning wavelength, therefore the quick tuning of wavelength may be implemented, and introduce sampled-grating and balzed grating, and sampled-grating
Reflectance spectrum and balzed grating, diffraction spectra covering wave-length coverage it is very big, therefore large-scale wavelength tuning may be implemented, then
In conjunction with the Injection Current adjusted above phase modulation area, the further fine tuning of wavelength may be implemented.
In the present embodiment, the first collimation lens 2 and balzed grating, 3 form the exocoel of the tunable laser.
It is acted on by the common modeling of sampled grating area and balzed grating, according to cursor effect, the pressure of line width may be implemented
Narrow, along with the introducing of exocoel, the chamber for increasing overall resonance chamber is long, realize further narrowing to line width.
In the present embodiment, should extenal cavity tunable laser device based on Littman structure further include the second collimation lens 5,
Third collimation lens 6, optical fiber 7, heat sink 8 and semiconductor cooler 9；Wherein, the second collimation lens 5 and third collimation lens 6
In the optical path of the zero level primary maximum of 3 diffraction light of balzed grating,；Optical fiber 7 is located at the Coupling point position of third collimation lens 6；Half
Conductor chip gain 1, the first collimation lens 2, balzed grating, 3, the second collimation lens 5 and third collimation lens 6 are respectively positioned on heat
Heavy 8 top, heat sink 8 are located at 9 top of semiconductor cooler；Wherein, the second collimation lens 5, third collimate saturating 6 mirror, optical fiber 7 is used for
For users to use by the zero level primary maximum output of 3 diffraction light of balzed grating,.
By by chip gain, collimation lens, balzed grating, be placed on it is same it is heat sink on, and will be heat sink, be placed on same
On semiconductor cooler, the entirety control to laser temperature may be implemented, avoid influence of the temperature fluctuation to cavity length of the resonator chamber,
And then influence the stability of output wavelength.
In the present embodiment, the rear and front end of semiconductor gain chip 1 is coated with anti-reflection film, and balzed grating, 3 is to be fixed on
In rotatable mechanical structure, which can be electronic be also possible to manually.
In the present embodiment, the size of current of sampled grating area injection or the inclination angle of balzed grating, can only be changed,
It can realize wavelength tuning, but for both changing just, such tuning can only realize relatively small-scale wave
Long tuning, therefore the wavelength tuning method of the extenal cavity tunable laser device of Littrow structure provided by the invention, can be by only
Change a condition in sampled grating area Injection Current and balzed grating, inclination angle, realizes small range of wavelength tuning, keep away
The frequent use of the mechanical structure to control balzed grating, is exempted from, to reduce the influence shaken to laser performance.
According to the above-mentioned provided extenal cavity tunable laser device based on Littrow structure, the present invention provides one kind should
The wavelength tuning method of extenal cavity tunable laser device, as shown in figure 5, this method comprises the following steps:
Third electrode injection electric current above the gain region of semiconductor gain chip is made gain region occur to swash by step S1
Lase；
The phase modulation area through semiconductor gain chip of step S2, the laser that gain region left side is projected enter semiconductor gain core
It is sampled optical grating reflection in the sampled grating area of piece, obtained reflectance spectrum is comb spectrum；
Step S3, the directional light that the laser that gain region right side is emitted is obtained through the first collimation lens inject the table of balzed grating,
Diffraction occurs for face, generates diffraction light；
Step S4 adjusts the inclination angle of balzed grating, grating planar, by the preset wavelength in the level-one primary maximum of diffraction light
It is reflected back in semiconductor gain chip；
Step S5, the intersection of the light that the reflected light of balzed grating, and sampled grating area are reflected back by gain region into
Row amplification, the light of intersection after multiple oscillation is amplified in semiconductor gain chip and exocoel by the second collimation lens and
The coupling of third collimation lens is output in optical fiber；
Step S6 adjusts the Injection Current of first electrode above the tilt angle and sampled grating area of balzed grating, with
The wavelength for changing the light of intersection, tentatively tunes wavelength；
Step S7 adjusts the Injection Current of second electrode above phase modulation area, is further tuned to wavelength.
The wavelength tuning method of extenal cavity tunable laser device provided by the invention based on Littrow structure, can pass through
Change control balzed grating, mechanical structure voltage come change reflective mirror reflection angle and balzed grating, inclination angle and
The electric current injected above sampled grating area carrys out tuning wavelength, therefore the quick tuning of wavelength may be implemented；The reflection of sampled-grating
It is very big to compose the wave-length coverage covered with the diffraction spectra of balzed grating, therefore large-scale wavelength tuning may be implemented, in conjunction with tune
The Injection Current above phase modulation area is saved, the further fine tuning of wavelength may be implemented；Pass through sampled grating area and balzed grating,
Common modeling effect, according to cursor effect, narrowing for line width may be implemented, and the introducing of exocoel increases overall resonance chamber
Chamber it is long, realize further narrowing for line width.
In the present embodiment, it is somebody's turn to do step in the wavelength tuning method of the extenal cavity tunable laser device based on Littrow structure
S3, further includes:
Zero level primary maximum in diffraction light is output to light by the effect coupling of the second collimation lens and third collimation lens
In fibre, output is for users to use.
In step s3, especially by the tilt angle for the grating planar for changing balzed grating, one in diffraction light is selected
Desired wavelength in grade primary maximum, is reflected back in semiconductor gain chip.
In the present embodiment, the size of current of sampled grating area injection or the inclination angle of balzed grating, can only be changed,
It can realize wavelength tuning, but for both changing just, such tuning can only realize relatively small-scale wave
Long tuning, therefore the wavelength tuning method of the extenal cavity tunable laser device provided by the invention based on Littrow structure, Ke Yitong
The condition only changed in sampled grating area Injection Current and balzed grating, inclination angle is crossed, realizes small range of wavelength tune
It is humorous, the frequent use of the mechanical structure to control balzed grating, is avoided, to reduce the influence shaken to laser performance.
So far, attached drawing is had been combined the present embodiment is described in detail.According to above description, those skilled in the art
There should be clear understanding to the present invention.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.
It should also be noted that, can provide the demonstration of the parameter comprising particular value herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
It is only the direction with reference to attached drawing, the protection scope being not intended to limit the invention to term.In addition, unless specifically described or must
The step of must sequentially occurring, there is no restriction for the sequences of above-mentioned steps in listed above, and can be changed according to required design or again
It is new to arrange.And above-described embodiment can be based on the considerations of design and reliability, and the collocation that is mixed with each other uses or and other embodiments
Mix and match uses, i.e., the technical characteristic in different embodiments can freely form more embodiments.
It should be noted that running through attached drawing, identical element is indicated by same or similar appended drawing reference.In the above description,
Some specific embodiments are used for description purposes only, and should not be construed to the present invention has any restrictions, and only the present invention is real
Apply the example of example.When may cause the understanding of the present invention and cause to obscure, conventional structure or construction will be omitted.It should be noted that figure
In the shape and size of each component do not reflect actual size and ratio, and only illustrate the content of the embodiment of the present invention.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (10)
1. a kind of extenal cavity tunable laser device based on Littman structure characterized by comprising
Successively sequentially-placed semiconductor gain chip, the first collimation lens, balzed grating, and with the balzed grating, phase
Pair reflective mirror；The semiconductor gain chip, the first collimation lens and balzed grating, are located in same optical axis, and the sudden strain of a muscle
There are the angles that one is greater than 0 for the grating planar and the optical axis of credit grating；Wherein, the semiconductor gain chip is from left to right
Include successively sampled grating area, phase modulation area, gain region and be covered each by the sampled grating area, phase modulation area, gain region
First electrode, second electrode and the third electrode of side；The balzed grating, and reflecting mirror are both secured to electronic or manual control
In the mechanical structure of system.
2. extenal cavity tunable laser device according to claim 1, which is characterized in that first collimation lens glares
Grid and reflective mirror form the exocoel of the extenal cavity tunable laser device based on Littman structure.
3. extenal cavity tunable laser device according to claim 1, which is characterized in that described outer based on Littman structure
Chamber adjustable laser further include:
Second collimation lens, third collimation lens, optical fiber, heat sink and semiconductor cooler；Second collimation lens and
Three collimation lenses are located in the optical path of the zero level primary maximum of the balzed grating, diffraction light；The optical fiber is located at third collimation
The Coupling point position of lens；The semiconductor gain chip, the first collimation lens, balzed grating, the second collimation lens and
Three collimation lenses are respectively positioned on the heat sink top, described heat sink above the semiconductor cooler.
4. extenal cavity tunable laser device according to claim 3, which is characterized in that second collimation lens, third are quasi-
Straight lens, optical fiber are used to export the zero level primary maximum of the diffraction light of the balzed grating,.
5. a kind of wavelength tuning method of extenal cavity tunable laser device according to any one of claims 1 to 4, feature exist
In, which comprises
By the third electrode injection electric current above the gain region of semiconductor gain chip, make the gain region that laser lasing occur；
The laser projected on the left of the gain region injects the sampling of semiconductor gain chip through the phase modulation area of semiconductor gain chip
Optical grating reflection is sampled in grating region, obtained reflectance spectrum is comb spectrum；
The grating that the directional light that the laser being emitted on the right side of the gain region is obtained through the first collimation lens is incident on balzed grating, is flat
Diffraction occurs for face, generates diffraction light；
Level-one primary maximum in the diffraction light injects the surface of reflective mirror, by adjusting the reflective mirror and balzed grating, plane
Angle, the preset wavelength in the level-one primary maximum of the diffraction light is reflected back the balzed grating, and pass through the glittering
Optical grating reflection returns in the semiconductor gain chip；
The intersection for the light that the reflected light of the balzed grating, and the sampled grating area are reflected back by the gain region
It amplifies, the light of the intersection is after multiple oscillation is amplified in the semiconductor gain chip and exocoel through the second standard
Straight lens and the coupling of third collimation lens are output in optical fiber；
Adjust the reflection angle of the reflective mirror or the tilt angle of balzed grating, and the sampled grating area first electrode
Injection Current wavelength is tentatively tuned with changing the wavelength of the light of the intersection；
The Injection Current for adjusting second electrode above the phase modulation area, further tunes wavelength.
6. a kind of extenal cavity tunable laser device based on Littrow structure characterized by comprising
Successively sequentially-placed semiconductor gain chip, the first collimation lens and balzed grating,；The semiconductor gain core
Piece, the first collimation lens and balzed grating, are located in same optical axis, and the grating planar of the balzed grating, and the optical axis
There are the angles that one is greater than 0；Wherein, the semiconductor gain chip from left to right successively include sampled grating area, phase modulation area,
Gain region and the first electrode being covered each by above the sampled grating area, phase modulation area, gain region, second electrode and
Three electrodes；The balzed grating, is fixed in mechanical structure that is electronic or manually controlling.
7. extenal cavity tunable laser device according to claim 6, which is characterized in that first collimation lens and glare
Grid form the exocoel of the extenal cavity tunable laser device based on Littrow structure.
8. extenal cavity tunable laser device according to claim 6, which is characterized in that described outer based on Littrow structure
Chamber adjustable laser further include:
Second collimation lens, third collimation lens, optical fiber, heat sink and semiconductor cooler；Second collimation lens and
Three collimation lenses are located in the optical path of the zero level primary maximum of the balzed grating, diffraction light；The optical fiber is located at third collimation
The Coupling point position of lens；The semiconductor gain chip, the first collimation lens, balzed grating, the second collimation lens and
Three collimation lenses are respectively positioned on the heat sink top, described heat sink above the semiconductor cooler.
9. extenal cavity tunable laser device according to claim 6, which is characterized in that second collimation lens, third are quasi-
Straight lens, optical fiber are used to export the zero level primary maximum of the balzed grating, diffraction light.
10. a kind of wavelength tuning method of the extenal cavity tunable laser device as described in any one of claim 6 to 9, feature
It is, which comprises
By the third electrode injection electric current in semiconductor gain chip above gain region, make the gain region that laser lasing occur；
The phase modulation area through semiconductor gain chip of the laser projected on the left of the gain region enters taking for semiconductor gain chip
Sample is sampled optical grating reflection in grating region, and obtained reflectance spectrum is comb spectrum；
The grating that the directional light that the laser being emitted on the right side of the gain region is obtained through the first collimation lens is incident on balzed grating, is flat
Diffraction occurs for face, generates diffraction light；
The preset wavelength in the level-one primary maximum of the diffraction light is reflected at the inclination angle for adjusting the balzed grating, grating planar
It returns in semiconductor gain chip；
The intersection for the light that the reflected light of the balzed grating, and the sampled grating area are reflected back by the gain region
It amplifies, the light of the intersection passes through the second collimation after multiple oscillation is amplified in semiconductor gain chip and exocoel
Lens and the coupling of third collimation lens are output in optical fiber；
The Injection Current of first electrode above the tilt angle and the sampled grating area of the balzed grating, is adjusted, to change
The wavelength for becoming the light of the intersection tentatively tunes wavelength；
The Injection Current for adjusting second electrode above the phase modulation area, further tunes wavelength.
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| CN111694082A (en) * | 2020-05-28 | 2020-09-22 | 昆明理工大学 | Method for obtaining frequency modulation polarized laser by utilizing graphene nanoribbon array grating |
| CN111916993A (en) * | 2020-06-16 | 2020-11-10 | 太原理工大学 | Chaotic laser with wide tuning wavelength |
| CN113241585A (en) * | 2021-04-30 | 2021-08-10 | 中国科学院半导体研究所 | Semiconductor tunable laser and preparation method thereof |
| CN115603172A (en) * | 2022-11-18 | 2023-01-13 | 吉光半导体科技有限公司（Cn） | Fast-tuning small-sized Littman structure external cavity laser |
| CN115995756A (en) * | 2023-03-23 | 2023-04-21 | 苏州长光华芯半导体激光创新研究院有限公司 | Wavelength locking system and wavelength locking method |
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