CN101969178A - External cavity feedback laser generation method and laser - Google Patents
External cavity feedback laser generation method and laser Download PDFInfo
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- CN101969178A CN101969178A CN 201010289362 CN201010289362A CN101969178A CN 101969178 A CN101969178 A CN 101969178A CN 201010289362 CN201010289362 CN 201010289362 CN 201010289362 A CN201010289362 A CN 201010289362A CN 101969178 A CN101969178 A CN 101969178A
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Abstract
The invention discloses an external cavity feedback laser generation method and a laser and belongs to the technical field of laser. The method comprises: 1) collimating the light beam output by a laser diode coated with an anti-reflection film by using a collimating lens; 2) performing frequency selection operation of the collimated light beam by using an atom filter; and 3) feeding the laser subjected to frequency selection back to the laser diode coated with the anti-reflection film by using an external cavity mirror. In the laser, the light beam output by the laser semiconductor diode coated with the anti-reflection film passes through the collimating lens, the atom filter and the external cavity mirror in turn and then return to the later semiconductor diode coated with the anti-reflection film, so that the later semiconductor diode coated with the anti-reflection film, the collimating lens, the atom filter and the external cavity mirror form a resonance light path; and a control circuit is connected with the later semiconductor diode coated with the anti-reflection film and the atom filter respectively. The method and the laser improve the long-term stability and accuracy of the laser and have high immune capacity for external environmental factors, the working temperature of the diode and the wavenoise of a working current.
Description
Technical field
The present invention relates to exocoel feedback laser technology, particularly a kind of exocoel feedback laser production method and laser to gain media temperature and current noise immunity belong to laser technology field.
Background technology
External-cavity semiconductor laser because its narrow linewidth, tunable, be convenient to advantages such as frequency stabilization, volume are little, compact conformation, all have a wide range of applications at aspects such as cold atom physics, laser spectroscopy, quantum information, metering, environmental monitoring, commercial measurements.At present the semi-conductive laser of various in the world wave bands all is to utilize the method (abbreviation exocoel) of extension resonant cavity feedback to press the live width of narrow laser basically, simultaneously, in order to realize the single mode operation modeling original paper must be arranged.A this exocoel feedback semiconductor laser scheme of the prior art is to utilize grating external-cavity to realize two kinds of functions of modeling and exocoel feedback simultaneously, and another scheme of the prior art is to utilize interferometric filter modeling level crossing exocoel feedback.But the output frequency of these two kinds of cavity semiconductor laser is all very sensitive to the temperature of electric current and outside, has long-term frequency drift unsteadiness.More strictly speaking, the exocoel feedback semiconductor laser that existing grating external-cavity and interferometric filter exocoel technology realize does not have accuracy owing to long-term frequency drift.
In addition, prior art has also been reported and has been utilized atomic light filter that the semiconductor laser that does not plate anti-reflection film is made up the exocoel feedback laser, but the laser output frequency of such structure is still very responsive to parameters such as semi-conductive temperature and electric currents, is easy to take place mode hopping.Therefore not plating anti-reflection film exocoel feedback laser has promptly used atomic light filter but can not get concrete application.
Summary of the invention
The present invention is the laser purpose of output frequency accurately in order to realize having long-term stability, and a kind of exocoel feedback laser production method and laser are provided.The present invention utilizes the semiconductor laser tube of having plated anti-reflection film, and utilize atomic light filter as the frequency-selecting device, overcome the present above-mentioned shortcoming of various external-cavity semiconductor laser in the world well, it is highly stable that such laser has centre frequency, the temperature of noise spectra of semiconductor lasers and electric current are very insensitive, be the characteristics of temperature and current noise immunity, can be atomic clock, atomic interferometer, nonmagnetic atom is taken into account high-accuracy laser spectroscopy metering semiconductor laser light resource steady in a long-term is provided.
For achieving the above object, the invention provides a kind of exocoel feedback laser production method, comprising temperature and current noise immunity:
The narrow transmission spectrum that adopts the faraday anomalous dispersion atomic light filter is as the modeling device, make the laser diode that has plated anti-reflection film after the light beam behind the collimating lens is through the atomic light filter modeling, feed back to the laser diode of plating anti-reflection film by external cavity mirror, under the acting in conjunction of the feedback of the modeling of atomic light filter and external cavity mirror, the semiconductor laser output of plating anti-reflection film and the corresponding laser of atomic light filter transmission spectrum spectrum, promptly the transmission spectrum centre wavelength of anti-reflection film is consistent with the centre wavelength of atomic light filter transmission spectrum.
For achieving the above object, the present invention also provides a kind of exocoel feedback laser to temperature and current noise immunity, comprising:
Pedestal is provided with the laser diode of the plating anti-reflection film of the semiconductor chilling plate that is used for temperature control, the light direction that the laser diode pedestal is provided with thermistor, laser diode is equipped with collimating lens, sets gradually chamber, the laser epitaxial chamber mirror of faraday anomalous dispersion atomic light filter, band piezoelectric ceramic after the collimating lens.The power drives of laser partly comprises drive current source, the temperature control power supply of diode, the drive power supply for piezoelectric ceramics of laser diode.
Wherein, the laser diode of described plating anti-reflection film is under the temperature control of described semiconductor chilling plate, thermistor and temperature control power supply, under the driving of the drive current source of described laser diode, export laser, modeling through described collimating lens and described faraday anomalous dispersion atomic light filter, and under the feedback of described exocoel warp, export the laser output corresponding with described atomic light filter transmission spectrum frequency.
Technical scheme of the present invention is:
A kind of exocoel feedback laser production method the steps include:
1) light beam that will be coated with the laser diode output of anti-reflection film collimates through collimating lens;
2) utilize the light beam after the atomic light filter collimation to carry out frequency-selecting;
3) laser after the frequency-selecting is fed back to the described laser diode that is coated with anti-reflection film through an external cavity mirror.
Further, described atomic light filter is the faraday anomalous dispersion atomic light filter.
Further, the laser of described external cavity mirror after with frequency-selecting promptly feeds back to the described laser diode that is coated with anti-reflection film through described atomic light filter, described collimating lens successively along original optical path.
Further, described external cavity mirror is chamber, the laser epitaxial chamber mirror of a band piezoelectric ceramic.
Further, be provided with a coupling output lens between the resonant optical path of described collimating lens and described atomic light filter.
A kind of exocoel feedback laser is characterized in that comprising the laser semiconductor diode, collimating lens, atomic light filter, outer cavity mirror, the control circuit that are coated with anti-reflection film; Wherein, the described light beam that is coated with the laser semiconductor diode output of anti-reflection film returns the described laser semiconductor diode that is coated with anti-reflection film successively behind described collimating lens, atomic light filter, outer cavity mirror, make described laser semiconductor diode, collimating lens, atomic light filter, the outer cavity mirror that is coated with anti-reflection film constitute a resonant optical path; Described control circuit is connected with described laser semiconductor diode, the atomic light filter that is coated with anti-reflection film respectively.
Further, described external cavity mirror is chamber, the laser epitaxial chamber mirror of a band piezoelectric ceramic; Described control circuit is connected with described piezoelectric ceramic.
Further, described external cavity mirror is the total reflection external cavity mirror, is provided with an output coupling mirror between the resonant optical path of described collimating lens and described atomic light filter.
Further, also comprise a speculum, be used for the light beam of described coupling output lens one end output is fed back to described resonant optical path.
Further, described atomic light filter is two cascade atomic light filters that the atom bubble combines under different temperature and magnetic field condition.
Compared with prior art, good effect of the present invention is:
As shown from the above technical solution, the present invention utilizes the laser diode of plating anti-reflection film, and the exocoel feedback laser method and the laser of atomic light filter modeling, owing to utilized the narrow linewidth selecting frequency characteristic of faraday anomalous dispersion atomic light filter, guaranteed the long-time stability and the accuracy of exocoel feedback laser output optical frequency.The laser diode of plating anti-reflection film does not have the competition of inner chamber mould, its output frequency wave noise of the factors such as operating current of working temperature, the diode of environmental factor, diode to external world has good immunocompetence, can be operated in continuously for a long time on the frequency of faraday anomalous dispersion atomic light filter transmission spectrum correspondence.
Description of drawings
Fig. 1 is a kind of exocoel feedback laser production method schematic flow sheet to temperature and current noise immunity of the present invention;
Fig. 2 is the structural representation of a kind of exocoel feedback laser first embodiment to temperature and current noise immunity of the present invention;
Fig. 3 is the structural representation of a kind of exocoel feedback laser second embodiment to temperature and current noise immunity of the present invention;
Fig. 4 is the structural representation of a kind of exocoel feedback laser the 3rd embodiment to temperature and current noise immunity of the present invention;
Fig. 5 is the structural representation of a kind of exocoel feedback laser the 4th embodiment to temperature and current noise immunity of the present invention;
Wherein: 1-has plated the laser semiconductor diode of anti-reflection film, the 2-collimating lens, and the 3-atomic light filter, 4-outer cavity mirror, 5-is with piezoelectric ceramic, the 6-control circuit, 7-exports laser, the 8-output lens that is coupled, 9-speculum.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention clearer, below in conjunction with the accompanying drawing in the embodiment of the invention, technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
Fig. 1 is the schematic flow sheet of a kind of exocoel feedback laser production method embodiment to temperature and current noise immunity of the present invention.As shown in Figure 1, comprise the steps:
The long-time stability of the temperature of step 101, the narrow linewidth transmission spectrum that utilizes the faraday anomalous dispersion atomic light filter, transmission spectrum and the transmission spectrum of magnetic field tuning characteristic and faraday anomalous dispersion atomic light filter have been used as plating the frequency-selecting device of anti-reflection film diode laser;
A kind of exocoel feedback laser method and existing grating external-cavity feedback laser method that the embodiment of the invention provides to temperature and current noise immunity, existing interferometric filter exocoel feedback laser method, and existing atomic light filter exocoel feedback laser method of not plating anti-reflection film is compared, the present invention has plated the arrowband frequency-selecting of the laser diode and the faraday anomalous dispersion atomic light filter of anti-reflection film by utilization, tuning performance and stability thereof, the frequency that has guaranteed output laser can be operated on the transmission spectrum of faraday anomalous dispersion atomic light filter of specific atoms steadily in the long term, can realize exporting optical maser wavelength or frequency to semi-conductive temperature and current noise immunity.
Further, on above-mentioned basis embodiment illustrated in fig. 1, it is long to regulate laser cavity by the control of piezoelectric ceramic on chamber, the laser epitaxial chamber mirror of regulating described band piezoelectric ceramic, can the output laser stabilization on specific atomic spectral line.
Further, on above-mentioned basis embodiment illustrated in fig. 1, utilize other gain mediums to replace the semiconductor laser gain media, form the exocoel feedback laser that utilizes the faraday anomalous dispersion atomic light filter in no chamber.Note medium described here be the surface still by the plating of special requirement of the present invention the gain medium of anti-reflection film.Described other gain mediums comprise the solid state laser gain medium, the gas laser gain media, liquid laser gain media and optical-fiber laser gain media, as long as the gain spectrum of these gain mediums has corresponding frequency with the transmission spectrum of faraday anomalous dispersion atomic light filter, also can implement to utilize the exocoel feedback laser of faraday anomalous dispersion atomic light filter according to described method of the present invention.Be with the difference of existing technology: special feature of the present invention is that the surface of gain medium must plate the corresponding anti-reflection film of optical maser wavelength.Compare with existing technology, the present invention has thoroughly eliminated the inner chamber mould, is only decided the position of exocoel mould by atomic light filter.
In embodiments of the present invention, when what utilize is the faraday anomalous dispersion atomic light filter of alkali metal atom, the gain media of the semiconductor laser of so described plating anti-reflection film gain spectrum need be corresponding with the transmission spectrum of the faraday anomalous dispersion atomic light filter of corresponding alkali metal atom.For example in the alkali metal atom attitude is represented, Principal quantum number n=2 (lithium), 3 (sodium), 4 (potassium), 5 (rubidiums) or 6 (caesiums) can utilize a spectral line D wherein
1(ground state ns
2S
1/2To excitation state np
2P
1/2Between transition) spectral line, also can utilize a D
2(ground state ns
2S
1/2To excitation state np
2P
3/2Between transition) spectral line.Similarly, can utilize a spectral line of highly excited level correspondence wherein, as ground state ns
2S
1/2To excitation state (n+1) p
2P
1/2Between the transition spectral line, also can utilize other spectral lines, as ground state ns
2S
1/2To excitation state (n+1) p
2P
3/2Between transition.For example more specifically: for the faraday anomalous dispersion atomic light filter of caesium atom, the gain spectrum of the gain media of the semiconductor laser of so described plating anti-reflection film need be corresponding with the transmission spectrum of the faraday anomalous dispersion atomic light filter of caesium atom, as 852.11nm (ground state 6s
2S
1/2To excitation state 6p
2P
3/2Between the transition spectral line), 894.35nm (ground state 6s
2S
1/2To excitation state 6p
2P
1/2Between the transition spectral line), 455.54nm (ground state 6s
2S
1/2To excitation state 7p
2P
3/2Between the transition spectral line), 459.32nm (ground state 6s
2S
1/2To excitation state 7p
2P
1/2Between the transition spectral line), 388.87nm (ground state 6s
2S
1/2To excitation state 8p
2P
1/2Between the transition spectral line), 387.54nm (ground state 6s
2S
1/2To excitation state 8p
2P
3/2Between the transition spectral line), 1358.9nm (excitation state 6p
2P
1/2To excitation state 7s
2S
1/2Between the transition spectral line), 1469.5nm (excitation state 6p
2P
3/2To excitation state 7s
2S
1/2Between the transition spectral line).Spectral line or gain medium material for other gain atoms have similar situation to specify no longer one by one.
Fig. 2 is the structural representation of a kind of exocoel feedback laser first embodiment to temperature and current noise immunity of the present invention.As shown in Figure 2, this laser comprises: plated the laser semiconductor diode 1 of anti-reflection film, and collimating lens 2, atomic light filter 3, the outer cavity mirror 4 of band piezoelectric ceramic 5, and relevant control circuit 6 constitutes.More than each component function be described below: the laser semiconductor diode 2 that has plated anti-reflection film issues out spectral width in the current drives of control circuit 6 and reaches the spontaneous radiation fluorescence of nm magnitude through collimating mirror 2 collimations, the luminous energy that these fluorescence intermediate frequency spectrum drop in atomic light filter 3 pass bands passes through atomic light filter, feeds back to the 7 laser output that the laser semiconductor diode that has plated anti-reflection film forms stimulated emission under the reflection of external cavity mirror 4.Control circuit 6 is used to control the voltage of the temperature of the temperature of the laser semiconductor diode 1 that has plated anti-reflection film and electric current, atomic light filter 3 and magnetic field, piezoelectric ceramic 5, and the frequency stabilization of laser frequency.Piezoelectric ceramic 5 is used for regulating the long next accurate frequency of controlling output laser 7 in chamber of exocoel.It is the temperature magnetic field and realizing extremely of regulating inner former speech steam bubble that the frequency location of the transmission peaks of atomic light filter is regulated.
Fig. 3 is the structural representation of a kind of exocoel feedback laser second embodiment to temperature and current noise immunity of the present invention.As shown in Figure 3, this laser comprises: plated the laser semiconductor diode 1 of anti-reflection film, and collimating lens 2, atomic light filter 3, the outer cavity mirror 4 of band piezoelectric ceramic 5, and relevant control circuit 6, and coupling output lens 8 constitutes.More than each component function be described below: the laser semiconductor diode 2 that has plated anti-reflection film issues out spectral width in the current drives of control circuit 6 and reaches the spontaneous radiation fluorescence of nm magnitude through collimating mirror 2 collimations, these fluorescence intermediate frequency spectrum drop on luminous energy in atomic light filter 3 pass bands by atomic light filter, form stimulated emission laser export laser 7 after the reflection of overcoupling output lens 8 feeding back to the laser semiconductor diode that has plated anti-reflection film under the reflection of external cavity mirror 4.Control circuit 6 is used to control the voltage of the temperature of the temperature of the laser semiconductor diode 1 that has plated anti-reflection film and electric current, atomic light filter 3 and magnetic field, piezoelectric ceramic 5, and the frequency stabilization of laser frequency.Piezoelectric ceramic 5 is used for regulating the long next accurate frequency of controlling output laser 7 in chamber of exocoel.
Fig. 4 is the structural representation of a kind of exocoel feedback laser the 3rd embodiment to temperature and current noise immunity of the present invention.As shown in Figure 4, this laser comprises: plated the laser semiconductor diode 1 of anti-reflection film, and collimating lens 2, atomic light filter 3, the outer cavity mirror 4 of band piezoelectric ceramic 5, and relevant control circuit 6, coupling output lens 8 and speculum 9 constitute.More than each component function be described below: the laser semiconductor diode 2 that has plated anti-reflection film issues out spectral width in the current drives of control circuit 6 and reaches the spontaneous radiation fluorescence of nm magnitude through collimating mirror 2 collimations, these fluorescence intermediate frequency spectrum drop on luminous energy in atomic light filter 3 pass bands by atomic light filter, form stimulated emission laser export laser 7 after the reflection of overcoupling output lens 8 feeding back to the laser semiconductor diode that has plated anti-reflection film under the reflection of external cavity mirror 4 and 9.Control circuit 6 is used to control the voltage of the temperature of the temperature of the laser semiconductor diode 1 that has plated anti-reflection film and electric current, atomic light filter 3 and magnetic field, piezoelectric ceramic 5, and the frequency stabilization of laser frequency.Piezoelectric ceramic 5 is used for regulating the long next accurate frequency of controlling output laser 7 in chamber of exocoel.
Fig. 5 is the structural representation of a kind of exocoel feedback laser the 4th embodiment to temperature and current noise immunity of the present invention.As shown in Figure 5, this laser comprises: plated the laser semiconductor diode 1 of anti-reflection film, and collimating lens 2, atomic light filter 3, the outer cavity mirror 4 of band piezoelectric ceramic 5, and relevant control circuit 6, coupling output lens 8 and speculum 9 constitute.More than each component function be described below: the laser semiconductor diode 2 that has plated anti-reflection film issues out spectral width in the current drives of control circuit 6 and reaches the spontaneous radiation fluorescence of nm magnitude through collimating mirror 2 collimations, these fluorescence intermediate frequency spectrum drop on luminous energy in atomic light filter 3 pass bands by atomic light filter, form stimulated emission laser export laser 7 after the reflection of overcoupling output lens 8 feeding back to the laser semiconductor diode that has plated anti-reflection film under the reflection of external cavity mirror 4 and 9.Control circuit 6 is used to control the voltage of the temperature of the temperature of the laser semiconductor diode 1 that has plated anti-reflection film and electric current, atomic light filter 3 and magnetic field, piezoelectric ceramic 5, and the frequency stabilization of laser frequency.Piezoelectric ceramic 5 is used for regulating the long next accurate frequency of controlling output laser 7 in chamber of exocoel.
Particularly, the feature of used semiconductor laser tube is to have plated anti-reflection film in a kind of exocoel feedback laser to temperature and current noise immunity in the embodiment of the invention, the present invention in this case with the difference of existing every other exocoel feedback laser essence based on the atomic light filter modeling.In addition, the present invention is not limited to semiconductor as gain media, comprises that also other end face has plated the anti-reflection film solid state gain medium.Be not limited to concrete a kind of alkali metal gas atomic spectral line among the present invention, and be applicable to that the institute of alkali metal atom gas filter correspondences such as lithium, sodium, potassium, rubidium, caesium might spectral line.Atomic light filter of the present invention also comprises the cascade atomic light filter that utilizes two atom bubbles to combine under different temperature and magnetic field condition, such cascade atomic light filter has only a frequency transmission peaks.
It should be noted that at last: above embodiment is only in order to technical scheme of the present invention to be described but not limit it, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that: it still can make amendment or be equal to replacement technical scheme of the present invention, and these modifications or be equal to replacement and also can not make amended technical scheme break away from the spirit and scope of technical solution of the present invention.
Claims (10)
1. an exocoel feedback laser production method the steps include:
1) light beam that will be coated with the laser diode output of anti-reflection film collimates through collimating lens;
2) utilize the light beam after the atomic light filter collimation to carry out frequency-selecting;
3) laser after the frequency-selecting is fed back to the described laser diode that is coated with anti-reflection film through an external cavity mirror.
2. the method for claim 1 is characterized in that described atomic light filter is the faraday anomalous dispersion atomic light filter.
3. method as claimed in claim 1 or 2 is characterized in that laser after described external cavity mirror is with frequency-selecting along original optical path, promptly feeds back to the described laser diode that is coated with anti-reflection film through described atomic light filter, described collimating lens successively.
4. method as claimed in claim 3 is characterized in that described external cavity mirror is chamber, the laser epitaxial chamber mirror of a band piezoelectric ceramic.
5. method as claimed in claim 4 is characterized in that being provided with between the resonant optical path of described collimating lens and described atomic light filter a coupling output lens.
6. an exocoel feedback laser is characterized in that comprising the laser semiconductor diode, collimating lens, atomic light filter, outer cavity mirror, the control circuit that are coated with anti-reflection film; Wherein, the described light beam that is coated with the laser semiconductor diode output of anti-reflection film returns the described laser semiconductor diode that is coated with anti-reflection film successively behind described collimating lens, atomic light filter, outer cavity mirror, make described laser semiconductor diode, collimating lens, atomic light filter, the outer cavity mirror that is coated with anti-reflection film constitute a resonant optical path; Described control circuit is connected with described laser semiconductor diode, the atomic light filter that is coated with anti-reflection film respectively.
7. laser as claimed in claim 6 is characterized in that described external cavity mirror is chamber, the laser epitaxial chamber mirror of a band piezoelectric ceramic; Described control circuit is connected with described piezoelectric ceramic.
8. as claim 6 or 7 described lasers, it is characterized in that described external cavity mirror is the total reflection external cavity mirror, be provided with a coupling output lens between the resonant optical path of described collimating lens and described atomic light filter.
9. laser as claimed in claim 8 is characterized in that also comprising a speculum, is used for the light beam of described coupling output lens one end output is fed back to described resonant optical path.
10. laser as claimed in claim 9 is characterized in that described atomic light filter is two cascade atomic light filters that the atom bubble combines under different temperature and magnetic field condition.
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| CN103501180A (en) * | 2013-09-18 | 2014-01-08 | 北京无线电计量测试研究所 | Light wave anti-reflection type atom bubble and application method thereof |
| CN103532007A (en) * | 2013-10-22 | 2014-01-22 | 华北电力大学（保定） | Rapid frequency stabilization method of semiconductor laser |
| CN103969842A (en) * | 2014-05-22 | 2014-08-06 | 北京大学 | 1.5-micron waveband polarization pump atomic light filter |
| CN106229807A (en) * | 2016-09-27 | 2016-12-14 | 中国科学技术大学 | A kind of laser pulse generator of CFS center frequency stabilization power amplification |
| CN107370016A (en) * | 2017-08-14 | 2017-11-21 | 北京大学 | A kind of the mum laser standard of wavelength production method of communication band 1.5 and its device |
| US10224687B1 (en) * | 2015-06-22 | 2019-03-05 | Radoslaw M. Sobczynski | Laser with intracavity narrowband magneto-optic atomic filter |
| CN110018631A (en) * | 2019-04-10 | 2019-07-16 | 温州激光与光电子协同创新中心 | The Cs atom microwave frequency standard and its implementation detected using faraday's laser pumping |
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| CN103501180A (en) * | 2013-09-18 | 2014-01-08 | 北京无线电计量测试研究所 | Light wave anti-reflection type atom bubble and application method thereof |
| CN103532007A (en) * | 2013-10-22 | 2014-01-22 | 华北电力大学（保定） | Rapid frequency stabilization method of semiconductor laser |
| CN103532007B (en) * | 2013-10-22 | 2015-12-09 | 华北电力大学（保定） | A kind of rapid frequency stabilization method of semiconductor laser |
| CN103969842A (en) * | 2014-05-22 | 2014-08-06 | 北京大学 | 1.5-micron waveband polarization pump atomic light filter |
| US10224687B1 (en) * | 2015-06-22 | 2019-03-05 | Radoslaw M. Sobczynski | Laser with intracavity narrowband magneto-optic atomic filter |
| CN106229807B (en) * | 2016-09-27 | 2019-07-23 | 中国科学技术大学 | A kind of laser pulse generation device of CFS center frequency stabilization power amplification |
| CN106229807A (en) * | 2016-09-27 | 2016-12-14 | 中国科学技术大学 | A kind of laser pulse generator of CFS center frequency stabilization power amplification |
| CN107370016A (en) * | 2017-08-14 | 2017-11-21 | 北京大学 | A kind of the mum laser standard of wavelength production method of communication band 1.5 and its device |
| CN110018631A (en) * | 2019-04-10 | 2019-07-16 | 温州激光与光电子协同创新中心 | The Cs atom microwave frequency standard and its implementation detected using faraday's laser pumping |
| CN110190508A (en) * | 2019-05-27 | 2019-08-30 | 深港产学研基地（北京大学香港科技大学深圳研修院） | A kind of miniaturization narrow linewidth semiconductor laser |
| CN110190508B (en) * | 2019-05-27 | 2021-12-14 | 深港产学研基地（北京大学香港科技大学深圳研修院） | Miniaturized narrow linewidth semiconductor laser |
| CN110854659B (en) * | 2019-09-30 | 2021-07-20 | 浙江法拉第激光科技有限公司 | Double-frequency Faraday semiconductor laser and implementation method thereof |
| CN110854659A (en) * | 2019-09-30 | 2020-02-28 | 浙江法拉第激光科技有限公司 | Double-frequency Faraday semiconductor laser and implementation method thereof |
| CN110850703A (en) * | 2019-09-30 | 2020-02-28 | 浙江法拉第激光科技有限公司 | High-stability optical frequency atomic clock based on double-frequency Faraday semiconductor laser |
| CN110850703B (en) * | 2019-09-30 | 2021-09-07 | 浙江法拉第激光科技有限公司 | High-stability optical frequency atomic clock based on double-frequency Faraday semiconductor laser |
| CN110581437A (en) * | 2019-10-16 | 2019-12-17 | 微源光子(深圳)科技有限公司 | Tunable vertical light path narrow linewidth external cavity laser easy for mass production |
| CN110611242A (en) * | 2019-10-28 | 2019-12-24 | 微源光子(深圳)科技有限公司 | Narrow linewidth laser used for coherent laser radar |
| CN111900618A (en) * | 2020-07-31 | 2020-11-06 | 浙江法拉第激光科技有限公司 | High-stability double-frequency Faraday laser based on beat frequency locking and implementation method thereof |
| CN112542757A (en) * | 2020-12-08 | 2021-03-23 | 北京大学 | Faraday laser locked by cavity film of resonant cavity and preparation method thereof |
| CN112542757B (en) * | 2020-12-08 | 2022-07-19 | 北京大学 | Faraday laser locked by cavity film of resonant cavity and preparation method thereof |
| CN114759430A (en) * | 2022-04-02 | 2022-07-15 | 中国科学院国家授时中心 | Cat eye external cavity semiconductor laser |
| CN116487995A (en) * | 2023-04-28 | 2023-07-25 | 南京邮电大学 | High-stability multimode external cavity semiconductor laser based on mode interval locking |
| CN116487995B (en) * | 2023-04-28 | 2024-02-09 | 南京邮电大学 | High-stability multimode external cavity semiconductor laser based on mode interval locking |
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Application publication date: 20110209 |