CN105048279A - Semiconductor laser light source output device for alkali metal vapor laser device pumping - Google Patents
Semiconductor laser light source output device for alkali metal vapor laser device pumping Download PDFInfo
- Publication number
- CN105048279A CN105048279A CN201510457853.2A CN201510457853A CN105048279A CN 105048279 A CN105048279 A CN 105048279A CN 201510457853 A CN201510457853 A CN 201510457853A CN 105048279 A CN105048279 A CN 105048279A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- cavity mirror
- output device
- laser
- pass filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention provides a semiconductor laser light source output device for alkali metal vapor laser device pumping, and belongs to the technical field of semiconductor laser. The device comprises a semiconductor laser device, a collimating assembly, a narrow-band light filter and an outer cavity mirror, wherein a light beam output by the semiconductor laser device is collimated by the collimating assembly, enters the narrow-band light filter at a certain angle theta, passes through the narrow-band light filter, and then enters the outer cavity mirror; one part of light beam is reflected through the front surface of the outer cavity mirror, returns along the original path, sequentially passes through the narrow-band light filter and the collimating assembly, returns to the inside of the semiconductor laser device, is reflected by the rear cavity surface of the semiconductor laser device, and then sequentially passes through the collimating assembly, the narrow-band light filter and the outer cavity mirror; and the other part of light beam is directly output through the outer cavity mirror. According to the semiconductor laser light source output device, independent temperature control is not needed; the structure is simple; the spectrum is convenient to adjust; and the semiconductor laser light source output device plays a significant role in development of a high-performance alkali metal vapor laser device.
Description
Technical field
The invention belongs to semiconductor laser technique field, particularly relate to a kind of semiconductor laser light resource output device for alkali vapor laser pumping.
Background technology
Alkali vapor laser (DPAL) is using alkali metal atom saturated steam as gain media, its outer valence energy level transition is utilized to realize the typical three-level gas laser of laser action, there is quantum efficiency high, gas medium flowing heat radiation capable of circulation, near-infrared atomic spectral line air permeability is good, full electricity operation, the features such as compact conformation, high power gas laser volume weight can be overcome huge, heat effect of solid laser is serious, the problems such as semiconductor laser beam is second-rate, in recent years, DPAL receives increasing concern and research, be expected to develop into superlaser light source of new generation.
Relation between alkali metal atom absorbing wavelength and high-power semiconductor laser emission wavelength as shown in Figure 1, Na, K, Rb, Cs be corresponding 589.3nm, 671.0nm, 766.3nm, 780.0nm and 852.2nm respectively, the wave-length coverage that current high-power semiconductor laser covers is 750nm ~ 1100nm, can meet the pumping requirements of K, Rb and Cs atom, therefore present stage launches research mainly for potassium, rubidium and caesium vapor laser.
In order to the pumping effect obtained, the spectrum of pump light source strictly mates with the absorption spectrum of vapour of an alkali metal.And transition principle can be with according to alkali vapor laser, its absorption spectrum width very narrow (doppler linewidth of alkali metal atom only has 0.001nm), even if after being filled with high-pressure buffer gas, absorb spectrum width and be also only tens of GHz (0.05nm magnitude), as shown in Figure 2, under sunykatuib analysis different pressures, the relation of alkali metal Cs steam power output and pumping source live width: along with the increase of live width, Output of laser power sharply declines.Therefore pump light source is required: laser power is high, spectrum line width, optical maser wavelength are mated with absorbing wavelength.And the line width of semiconductor laser freely operated is usually at 2-4nm.Therefore in order to the emission spectra of semiconductor pumping sources and the absorption spectra of alkali metal atom are matched, semiconductor laser pumping source output linewidth must be narrowed, and make its sufficient center wavelength accuracy.
High power in the market, narrow linewidth semiconductor laser light source mainly adopt reflective Volume Bragg grating (VBG) external cavity feedback to realize, VBG is that one passes through laser holography, the quick specific direction sold off on glass of photo-thermal realizes the grating of refractive index periodic modulation, and it has selection diffraction to the light beam of specific wavelength, special angle incidence.As reflective VBG, when light beam is propagated along specific direction and meets Bragg condition, VBG can select the beam reflection of particular range of wavelengths, utilize this kind of mode, this VBG is placed in the semiconductor laser chip front after collimation, form resonant cavity with laser chip, under VBG selectivity feedback effect, the wavelength of laser is just stabilized in certain wave strong point.
In order to make each semiconductor laser unit Output of laser centre wavelength completely the same, consider the difference of VBG itself, VBG structure is equipped with independent temperature to each VBG, regulates the diffraction wavelength of VBG with this, thus control the resonance wavelength of each laser, reach the object that output wavelength is consistent.But we are also not difficult to find that in this structure, each semiconductor laser front end needs to be equipped with independently VBG, and this makes the cost of light source very high.
Summary of the invention
In order to solve problems of the prior art, the invention provides a kind of semiconductor laser light resource output device for alkali vapor laser pumping, this device utilizes spectrum-selectivity characteristic and the spectrum-angle tuning characteristic of narrow band pass filter, screen running laser mode by external cavity feedback, acquisition centre wavelength is tunable and the Laser output of spectrum line width.
The technical scheme that technical solution problem of the present invention adopts is as follows:
For the semiconductor laser light resource output device of alkali vapor laser pumping, this device comprises: semiconductor laser, collimator assembly, narrow band pass filter and external cavity mirror; Semiconductor laser output beams collimates through collimator assembly, then θ incides narrow band pass filter at a certain angle, after narrow band pass filter, reenter and be mapped to external cavity mirror, a part of light beam is through external cavity mirror front surface reflection, and Yan Yuanlu returns, successively through narrow band pass filter and collimator assembly, turn back in semiconductor laser, reflected by semiconductor laser rear facet, again through collimator assembly, narrow band pass filter and external cavity mirror; Another part light beam directly exports through external cavity mirror.
The invention has the beneficial effects as follows: 1) structure is simple, the spectrum that the present invention adopts monolithic narrow band pass filter to realize multiple laser cell regulates and narrows, without the need to independent temperature, to debug or Systematical control aspect all has clear superiority; 2) low cost of manufacture, relative to needing the VBG doing special construction, narrow band pass filter directly plates multilayer dielectric film and can realize on flat glass substrate, and production technology is relatively simple; 3) element laser damage threshold is higher, and need to carry out etching existing defects relative to grating, easily broken by superlaser, the surface smoothness of narrow band pass filter is high, can meet the power application of high power laser light; 4) spectral tuning is convenient, directly rotates the incident angle of narrow band pass filter, without the need to other computer heating control.Based on above-mentioned advantage, invention technology has important impetus for the development of high performance alkali vapor laser.
Accompanying drawing explanation
Fig. 1 alkali metal atom pumping wavelength and semiconductor laser wavelength coverage relation.
Under Fig. 2 different pressures, the relation of alkali metal Cs steam power output and pumping source live width.
Fig. 3 the present invention is used for the semiconductor laser light resource output device structural representation of alkali vapor laser pumping.
The curve of spectrum of Fig. 4 narrow band pass filter of the present invention when incidence angle.
Fig. 5 narrow band pass filter centre wavelength of the present invention is with angle change curve.
Fig. 6 One-dimensional power expansion of the present invention schematic diagram.
Fig. 7 the present invention two dimension power expansion schematic diagram.
In figure: 1, semiconductor laser, 11, laser rear facet, 12, laser front facet, 2, collimator assembly, 22, fast axis collimation mirror, 23, slow axis collimating mirror, 24, assembly is expanded, 3, narrow band pass filter, 4, external cavity mirror, 41, external cavity mirror front surface, 42, external cavity mirror rear surface, 5, the stacking laser array of one dimension, 6, two-dimentional stacking laser array, 71, light beam one, 72, light beam two, 73, light beam three, 74, light beam four, 75, light beam five and 76, light beam six.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further details.
As shown in Figure 3, laser rear facet 11 and external cavity mirror front surface 41 form the front rear facet of laserresonator, and semiconductor laser 1 output beam 1, after collimator assembly 2 collimates, exports collimated light beam 2 72 θ at a certain angle
iincide on narrow band pass filter 3, through the modeling effect of narrow band pass filter 3, only have meet spectral conditions light can through formation light beam 3 73, light beam 3 73 incides external cavity mirror front surface 41, light only perpendicular to external cavity mirror front surface 41 can be reflected back to semiconductor laser 1, the light of other angles is filtered, the light beam 4 74 effectively returned is again through the effect of narrow band pass filter 3 modeling, form light beam 6 76, its spectrum is narrowed further, and turn back to semiconductor laser 1 through collimator assembly 2) formed and effectively vibrate, the light beam 5 75 that external cavity mirror 4 exports through external cavity mirror rear surface 42 forms Laser output.In a resonant cycle cycle, need through three modeling effects, be respectively light beam 3 73, light beam 4 74 and light beam 6 76, wherein light beam 3 73 and light beam 6 76 act on by narrow band pass filter 3, carry out the Double Selection of wavelength and angle, light beam 4 74 is angle screening simultaneously, only impinges perpendicularly on external cavity mirror 4 or the very little light of incident angle could form effective Feedback, through three modeling effects, thus ensure the narrow linewidth of light beam 5 75.Wherein, semiconductor laser front facet 12 light-plated composes the high antireflection film that gain ranging internal reflection rate is less than 0.5%; The high-reflecting film that semiconductor laser rear facet 11 light-plated spectrum gain ranging internal reflection rate is greater than 95%.Narrow band pass filter 3 is the diffraction grating of transmission-type or the filter for plating multilayer dielectric film.External cavity mirror front surface 41 plates the part reflectance coating that reflectivity is 3% ~ 10%, and high antireflection film is plated in rear surface 42, is less than 0.1% in semiconductor laser chip spectrum gain scope internal reflection rate.
Fig. 4 is that narrow band pass filter is at incidence angle θ
icorresponding transmitted spectrum, its spectral width is the important parameter determining whole Output of laser spectrum spectrum width, and export to realize narrow spectrum, its spectrum width Δ λ (full width at half maximum) is generally less than 0.1nm, and the transmitance of centre wavelength is greater than 99%.
Fig. 5 is the variation relation of centre wavelength with incident angle of narrow band pass filter transmitted spectrum, and both are approximate linear, by anglec of rotation θ i, regulates the centre wavelength of transmitted spectrum, reaches the object of tuning laser spectrum.
Semiconductor laser 1 is carried out one dimension and swashs combiner by Fig. 6, and the stacking laser array 5 of one dimension, by after collimator assembly 2, can realize overall laser by common narrow band pass filter 3 and external cavity mirror 4 and narrow, without the need to controlling separately each laser cell spectrum.Wherein collimator assembly 2 may comprise fast axis collimation mirror 22, slow axis collimating mirror 23 and expand assembly 24.
Semiconductor laser 1 is carried out two-dimensional laser and closes bundle by Fig. 7, and two-dimentional stacking laser array 6, by after collimator assembly 2, can realize overall laser by common narrow band pass filter 3 and external cavity mirror 4 and narrow, without the need to controlling separately each laser cell spectrum.
Claims (7)
1. for the semiconductor laser light resource output device of alkali vapor laser pumping, it is characterized in that, this device comprises: semiconductor laser, collimator assembly, narrow band pass filter and external cavity mirror; Semiconductor laser output beams collimates through collimator assembly, then θ incides narrow band pass filter at a certain angle, after narrow band pass filter, reenter and be mapped to external cavity mirror, a part of light beam is through external cavity mirror front surface reflection, and Yan Yuanlu returns, successively through narrow band pass filter and collimator assembly, turn back in semiconductor laser, reflected by semiconductor laser rear facet, again through collimator assembly, narrow band pass filter and external cavity mirror; Another part light beam directly exports through external cavity mirror.
2. the semiconductor laser light resource output device for alkali vapor laser pumping according to claim 1, is characterized in that, the rear facet of described semiconductor laser and the front surface of external cavity mirror form resonant cavity.
3. the semiconductor laser light resource output device for alkali vapor laser pumping according to claim 1, is characterized in that, the high antireflection film that described semiconductor laser front facet light-plated spectrum gain ranging internal reflection rate is less than 0.5%; The high-reflecting film that semiconductor laser rear facet light-plated spectrum gain ranging internal reflection rate is greater than 95%.
4. the semiconductor laser light resource output device for alkali vapor laser pumping according to claim 1, it is characterized in that, described narrow band pass filter is the diffraction grating of transmission-type or the filter for plating multilayer dielectric film, effective transmitted spectrum bandwidth is less than 0.1nm, through centre wavelength with incidence angle θ be approximately linear change, the transmitance of centre wavelength is greater than 99%.
5. the semiconductor laser light resource output device for alkali vapor laser pumping according to claim 1, it is characterized in that, described external cavity mirror front surface plating reflectivity is the part reflectance coating of 3% ~ 10%, rear surface plating high antireflection film, is less than 0.1% in semiconductor laser chip spectrum gain scope internal reflection rate.
6. the semiconductor laser light resource output device for alkali vapor laser pumping according to claim 1, is characterized in that, described semiconductor laser is the stacking laser array of one dimension or two-dimentional stacking laser array.
7. the semiconductor laser light resource output device for alkali vapor laser pumping according to claim 1, is characterized in that, described collimator assembly is fast axis collimation mirror, slow axis collimating mirror and expand assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510457853.2A CN105048279A (en) | 2015-07-30 | 2015-07-30 | Semiconductor laser light source output device for alkali metal vapor laser device pumping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510457853.2A CN105048279A (en) | 2015-07-30 | 2015-07-30 | Semiconductor laser light source output device for alkali metal vapor laser device pumping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105048279A true CN105048279A (en) | 2015-11-11 |
Family
ID=54454612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510457853.2A Pending CN105048279A (en) | 2015-07-30 | 2015-07-30 | Semiconductor laser light source output device for alkali metal vapor laser device pumping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105048279A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293939A (en) * | 2017-08-03 | 2017-10-24 | 中国人民解放军国防科学技术大学 | A kind of adaptive narrow linewidth semiconductor laser frequency regulator |
| CN110649459A (en) * | 2019-09-24 | 2020-01-03 | 中国人民解放军国防科技大学 | Active lighting beacon system based on alkali metal vapor laser |
| CN110970795A (en) * | 2018-09-28 | 2020-04-07 | 中国科学院大连化学物理研究所 | Excimer broadband pumping alkali metal laser adopting long optical path structure |
| CN113950781A (en) * | 2019-03-20 | 2022-01-18 | 相干激光系统有限公司 | Excimer laser with uniform beam |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05264908A (en) * | 1992-01-24 | 1993-10-15 | Hewlett Packard Co <Hp> | Method and device for adjusting wavelength of optical device, and laser device using the method |
| CN1391321A (en) * | 2002-07-12 | 2003-01-15 | 武汉华工飞腾光子科技有限公司 | DWDM laser with wavelength selective tuning |
| US6556599B1 (en) * | 2000-10-17 | 2003-04-29 | Bookham Technology Plc | External cavity laser using angle-tuned filter and method of making same |
| CN102356524A (en) * | 2009-03-12 | 2012-02-15 | 集成光子学中心有限公司 | Hybrid integrated tuneable laser |
| CN103532012A (en) * | 2012-07-06 | 2014-01-22 | 中国科学院深圳先进技术研究院 | External-cavity semiconductor laser |
-
2015
- 2015-07-30 CN CN201510457853.2A patent/CN105048279A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05264908A (en) * | 1992-01-24 | 1993-10-15 | Hewlett Packard Co <Hp> | Method and device for adjusting wavelength of optical device, and laser device using the method |
| US6556599B1 (en) * | 2000-10-17 | 2003-04-29 | Bookham Technology Plc | External cavity laser using angle-tuned filter and method of making same |
| CN1391321A (en) * | 2002-07-12 | 2003-01-15 | 武汉华工飞腾光子科技有限公司 | DWDM laser with wavelength selective tuning |
| CN102356524A (en) * | 2009-03-12 | 2012-02-15 | 集成光子学中心有限公司 | Hybrid integrated tuneable laser |
| CN103532012A (en) * | 2012-07-06 | 2014-01-22 | 中国科学院深圳先进技术研究院 | External-cavity semiconductor laser |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293939A (en) * | 2017-08-03 | 2017-10-24 | 中国人民解放军国防科学技术大学 | A kind of adaptive narrow linewidth semiconductor laser frequency regulator |
| CN110970795A (en) * | 2018-09-28 | 2020-04-07 | 中国科学院大连化学物理研究所 | Excimer broadband pumping alkali metal laser adopting long optical path structure |
| CN110970795B (en) * | 2018-09-28 | 2021-06-04 | 中国科学院大连化学物理研究所 | Excimer broadband pumping alkali metal laser adopting long optical path structure |
| CN113950781A (en) * | 2019-03-20 | 2022-01-18 | 相干激光系统有限公司 | Excimer laser with uniform beam |
| CN110649459A (en) * | 2019-09-24 | 2020-01-03 | 中国人民解放军国防科技大学 | Active lighting beacon system based on alkali metal vapor laser |
| CN110649459B (en) * | 2019-09-24 | 2020-06-26 | 中国人民解放军国防科技大学 | Active lighting beacon system based on alkali metal vapor laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107272214B (en) | The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element | |
| CN105048279A (en) | Semiconductor laser light source output device for alkali metal vapor laser device pumping | |
| CN105891925B (en) | 1064 nanometers of polarization independent wideband high-diffraction efficiency bilayer reflection-type all dielectric gratings | |
| CN102016658B (en) | Light manipulation arrangement | |
| WO2009116971A1 (en) | Method and apparatus for wavelength tuning laser diodes | |
| CN107240856A (en) | The spectrum beam combination device of diffraction twice is realized using the transmission grating for plating reflectance coating | |
| CN101089609A (en) | Multiple spectral section continuous tuning high resolution infrared laser spectral measuring system and method | |
| CN105591267A (en) | Multi-wavelength pumped temperature control-free solid-state laser and multi-wavelength selection method | |
| CN202268596U (en) | MOPA (master oscillator power amplifier) system for semi-conductor diode-pumped alkali metal vapor lasers | |
| Ciapurin et al. | Spectral combining of high-power fiber laser beams using Bragg grating in PTR glass | |
| CN102324686B (en) | Semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor | |
| CN107293939A (en) | A kind of adaptive narrow linewidth semiconductor laser frequency regulator | |
| CN101859975A (en) | Dual-wavelength tunable thulium-doped fiber laser | |
| CN103048714A (en) | Reflection type volume Bragg grating and application of reflection type volume Bragg grating | |
| CN102868089A (en) | Device and method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers | |
| CN117039604A (en) | Double interference filter special angle composite feedback quantity adjustable semiconductor laser | |
| JP2009283531A (en) | Wavelength-variable light source | |
| CN114994938B (en) | Dispersion enhanced optical element and spectrum beam combining, locking and measuring structure | |
| CN111129951A (en) | Wide-tuning external cavity semiconductor laser cavity based on grating and MEMS (micro-electromechanical systems) reflector | |
| CN212304194U (en) | 509nm laser system excited by cesium atom in rydberg state | |
| CN101383485A (en) | Outer cavity making semiconductor laser array output dual wavelength | |
| CN103762488A (en) | High power narrow linewidth tunable laser | |
| CN115117732A (en) | Semiconductor laser with tunable external cavity | |
| CN105048262B (en) | A kind of narrow linewidth excimer laser for improving resonant cavity | |
| CN202840237U (en) | Device using single grating external cavity feedback to realize multiple semiconductor laser beam combining |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151111 |
|
| RJ01 | Rejection of invention patent application after publication |