CN107293939A - A kind of adaptive narrow linewidth semiconductor laser frequency regulator - Google Patents

A kind of adaptive narrow linewidth semiconductor laser frequency regulator Download PDF

Info

Publication number
CN107293939A
CN107293939A CN201710657183.8A CN201710657183A CN107293939A CN 107293939 A CN107293939 A CN 107293939A CN 201710657183 A CN201710657183 A CN 201710657183A CN 107293939 A CN107293939 A CN 107293939A
Authority
CN
China
Prior art keywords
semiconductor laser
narrow linewidth
laser
frequency regulator
fluorescence
Prior art date
Application number
CN201710657183.8A
Other languages
Chinese (zh)
Inventor
杨子宁
王红岩
赵晓帆
华卫红
许晓军
Original Assignee
中国人民解放军国防科学技术大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国人民解放军国防科学技术大学 filed Critical 中国人民解放军国防科学技术大学
Priority to CN201710657183.8A priority Critical patent/CN107293939A/en
Publication of CN107293939A publication Critical patent/CN107293939A/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687Stabilising the frequency of the laser

Abstract

The invention discloses a kind of adaptive narrow linewidth semiconductor laser frequency regulator, including:Semiconductor laser, passing through a collimating system, body grating, heater, atomic air chamber, fluorescence measuring device and signal transacting and control system, semiconductor laser, passing through a collimating system and body grating three form exocoel, to under diffraction feedback effect behind body grating arrowband, the semiconductor laser 1 when exocoel shoot laser spectrum compares free-running is narrowed;Part shoot laser is incident to atomic air chamber and excites alkali metal atom to produce resonance fluorescence, fluorescence measuring systems detection fluorescence signal and input signal processing and control system, signal transacting is with control system by adjusting the heating power change grating temperature of heater in body grating and then changing shoot laser centre wavelength.The present invention has the advantages that effectively lift pumping system spectrum stability, property easy to use, environmental suitability.

Description

A kind of adaptive narrow linewidth semiconductor laser frequency regulator

Technical field

Present invention relates generally to field of laser device technology, a kind of adaptive narrow line for alkali metal laser pump (ing) is refered in particular to Wide semiconductor laser frequency regulator.

Background technology

Alkali metal laser uses semiconductor laser pumping alkali metal atom saturated vapor, utilizes alkali metal atom outer layer valency Transition of electronic energy realizes that laser is exported.Such laser combines semiconductor laser high-power output and gas media flow dissipates Hot advantage, with complete electrically operated, lightweight is compact, high quantum efficiency and the features such as good characteristics of atmospheric transmission, with good Gao Gong Rate exports potentiality, has potential using value in fields such as laser energy, Aero-Space and military affairs.

Semiconductor pumping sources of the realization of alkali metal laser dependent on high-quality, have rigors to its spectral signature: On the one hand, because alkali metal atom absorption spectrum line width is very narrow, press unusual in the range of 0.02~0.2nm according to chamber, and Commercial semiconductor lasers emission spectrum line width generally in 2~4nm, it is therefore desirable to semiconductor laser carry out linewidth compression to Alkali metal atom absorbs spectrum width identical magnitude;On the other hand, semiconductor pumped spectral emissions centre wavelength needs and alkali metal Atomic absorption centre wavelength is accurately aligned, and the efficient pump of alkali metal atom could be realized by being only provided simultaneously with above-mentioned two condition Pu.Alkali metal laser pumping source is mainly realized using the outer cell method based on body grating, i.e., by before semiconductor laser bar Volume Bragg grating (afterwards referred to as " body grating ") of the end coupling with narrow-band spectrum feedback characteristics, now semiconductor laser is former First resonator is formed new laserresonator-i.e. so-called " outer with body grating and semiconductor gain media rear facet Chamber " is replaced, so as to realize that narrow-band spectrum is exported, while electro-optic conversion effect suitable during with laser free-running can be realized Rate.

Although however, body grating exocoel scheme can realize effectively narrowing for spectrum, cardiac wave in can not ensuring accurately Long, its reason has two:One be laser output wavelength depend on body grating itself feed back wavelength, and feed back wavelength due to design and Mismachining tolerance etc. is often and alkali metal atom absorbing wavelength has deviation;Two be that body grating feeds back wavelength by its material temperature shadow Ring, increase with temperature and offset (typical wavelength temperature drift coefficient is 8-10pm/ DEG C) to long wave direction, and it is worked in semiconductor Laser can heat body grating in itself in journey, outgoing optical maser wavelength is changed.Therefore, in view of difficult in body grating process With the uncertainty of the wavelength offset and practical semiconductor that avoid to body grating degree of heat, Output of laser wavelength often can not essence Really it is directed at alkali metal atom absorption line.

In order to solve this problem, existing scheme is to carry out active temperature control to body grating, i.e., in the semiconductor course of work Centre wavelength is manually changed by being heated or being freezed to body grating, it is accurate with alkali metal atom absorption line to reach The purpose of alignment.Although this method is essentially what is proved effective, for example USAF Weapons Laboratory (Opt.Lett., Vol.33, No.7, Page 702,2008), the Chinese National University of Defense technology (Chin.Phys.Lett., Vol.28, No.10, 104202,2011), DILAS semiconductor companies of Germany (Proc.of SPIE, Vol.8962,89620F, 2014) etc. adopt at present With the program, but there is limitation in actual applications:On the one hand, program environmental suitability is poor, ambient parameter (temperature, Humidity etc.) change semiconductor laser and body grating relevant parameter can be caused to change, cause calibrated good system again Secondary there is wavelength offset, therefore in different environments using generally requiring to re-start wavelength calibration;On the other hand, high power Semiconductor system contains numerous bar bar and body grating (generally, is included per 1kW power>10 bar bars, Mei Geba Bar all corresponds to an independent body grating), once wavelength offset occurs in system, artificial calibration process will sufficiently complex and consumption When.So far, it there is no effective solution.It is to be herein pointed out for low-power single-frequency semiconductor laser, mesh Although preceding have the ripe active wavelength control program based on alkali metal atom air chamber saturated absorption frequency stabilization, program requirement Semiconductor laser works in single longitudinal mode state and alkali metal atom air chamber is in and does not contain other buffer gas so as to right Alkali metal atom energy level carries out hyperfine structure resolution, and alkali metal laser operation is unsatisfactory for above-mentioned condition, therefore can not make Use saturated absorption frequency stabilization method.

The content of the invention

The technical problem to be solved in the present invention is that:The technical problem existed for prior art, the present invention provides one Kind can effectively lift pumping system spectrum stability, property easy to use, the adaptive narrow linewidth semiconductor of environmental suitability and swash Light frequency regulator.

In order to solve the above technical problems, the present invention uses following technical scheme:

A kind of adaptive narrow linewidth semiconductor laser frequency regulator, including:Semiconductor laser, passing through a collimating system, body Grating, heater, atomic air chamber, fluorescence measuring device and signal transacting and control system, the semiconductor laser, light Beam colimated light system and body grating three form exocoel, and under diffraction feedback effect behind the body grating arrowband, exocoel outgoing swashs Semiconductor laser 1 when light spectrum compares free-running is narrowed;Part shoot laser is incident to atomic air chamber and excites alkali Metallic atom produces resonance fluorescence, the fluorescence measuring systems detection fluorescence signal and input signal processing and control system, institute Signal transacting is stated with control system by adjusting the heating power change grating temperature of heater in body grating and then changing Penetrate laser center wavelength.

As a further improvement on the present invention:The shoot laser sequentially passes through beam splitter, optical attenuator component, focused on thoroughly Mirror enters atomic air chamber.

As a further improvement on the present invention:The semiconductor laser 1 is single-shot light source, linear array list bar bar or folded battle array DOPA bar packing forms.

As a further improvement on the present invention:The launch wavelength of the semiconductor laser 1 be 766nm or 770nm, 780nm or 795nm, 852nm or 894nm.

As a further improvement on the present invention:The passing through a collimating system includes fast axis collimation lens, slow axis collimation lens In one kind or combination.

As a further improvement on the present invention:The atomic air chamber includes alkali metal atom and buffer gas, the alkali gold Category atom is one kind in potassium, rubidium or caesium, and the buffer gas is one kind in helium, neon, argon gas, Krypton and xenon, A kind of a kind of mixing with hydrocarbon gas such as methane or ethane either in helium, neon, argon gas, Krypton and xenon Gas.

As a further improvement on the present invention:The window of the atomic air chamber is normal incidence or brewster angle incidence.

As a further improvement on the present invention:The fluorescence measuring systems are photomultiplier, avalanche photodetector, light Electric diode or other fluorescence detection devices.

As a further improvement on the present invention:The heater is resistance heating, heating water bath or oil bath heating.

As a further improvement on the present invention:Show the centre wavelength and alkali metal of shoot laser when fluorescence signal is most strong Atomic absorption spectral line realizes accurate alignment, and now signal transacting keeps constant heating power and grating temperature with control system; When due to external environment change cause laser center wavelength to shift when, the signal transacting will be automatically adjusted with control system Heating power until fluorescence signal reach again it is most strong.

Compared with prior art, the advantage of the invention is that:

1st, adaptive narrow linewidth semiconductor laser frequency regulator of the invention, is a kind of adaptive narrow linewidth of new spectrum half Conductor Laser frequency regulator.The device uses closed ring spectra feedback control scheme, the adaptive adjustment of dynamic in real time body grating coupling Narrow linewidth semiconductor laser system output center wavelength, during use without artificial calibration, effectively strengthening system can make With convenience and environmental suitability.

2nd, adaptive narrow linewidth semiconductor laser frequency regulator of the invention, wavelength school is carried out using alkali metal atom in itself Standard, the problems such as compared to using instrument itself measurement error and precision present in the conventional method such as spectrometer, the device can The reliable accurate alignment for realizing pumping wavelength and alkali metal atom absorption line.

3rd, adaptive narrow linewidth semiconductor laser frequency regulator of the invention, possesses spectrum adaptive adjustment capability, uses Process is without artificial calibration, effective strengthening system reliability, property easy to use and environmental suitability.

4th, adaptive narrow linewidth semiconductor laser frequency regulator of the invention, simple in construction, it is easy to integrated, with good Practical application potentiality.

Brief description of the drawings

Fig. 1 is adaptive narrow linewidth semiconductor laser frequency regulator composition structural representation.

Fig. 2 is the relation between body grating heating temperature rise and incident laser centre wavelength.

Fig. 3 is that incident laser spectrum line style matches schematic diagram with atomic absorption spectrum line style.

Fig. 4 is the relation between fluorescence intensity and incident laser and Atomic absorption core wavelength offset.

Marginal data:

1st, semiconductor laser;2nd, fast axis collimation lens;3rd, slow axis collimation lens;4th, semiconductor emission laser;5th, body light Grid;6th, first laser;7th, shoot laser;8th, beam splitter;9th, second laser;10th, optical attenuator component;11st, condenser lens;12、 Atomic air chamber;13rd, the 3rd laser;14th, fluorescence measuring device;15th, signal transacting and control system.

Embodiment

The present invention is described in further details below with reference to Figure of description and specific embodiment.

The adaptive narrow linewidth semiconductor laser frequency regulator of the present invention, including:Semiconductor laser 1, beam collimation system System, body grating 5, heater, beam splitter 8, optical attenuator component 10, condenser lens 11, atomic air chamber 12, fluorescence measuring device 14th, signal transacting and control system 15.Semiconductor laser 1, passing through a collimating system and the three of body grating 5 form exocoel, in body To under diffraction feedback effect behind the arrowband of grating 5, the spectrum of exocoel shoot laser 7 compares the semiconductor laser 1 during free-running Narrowed;Part shoot laser 7 is incident to atomic air chamber 12 and excites alkali metal atom to produce resonance fluorescence, utilizes fluorescence measurement The detection fluorescence signal of system 14 and input signal processing and control system 15, signal transacting is with control system 15 by adjusting body light The heating power of grid 5 changes grating temperature and then changes shoot laser centre wavelength, and shoot laser is shown when fluorescence signal is most strong Centre wavelength is realized with alkali metal atom absorption line and is accurately aligned, and now keeps constant heating power and grating temperature;When Because the factors such as external environment change cause laser center wavelength to shift, signal transacting will be automatically adjusted with control system 15 Heating power is until fluorescence signal reaches most strong, the Stability and veracity of real-time adaptive guarantee shoot laser wavelength again.

As shown in figure 1, being the concrete application example of the present invention, alkali metal laser pump (ing) is primarily adapted for use in, the example Illustrated by taking single bar bar rubidium vapor laser semiconductor pumping sources as an example, but be equally applicable to potassium and caesium laser pump (ing), Yi Jiqi He has atom or the molecular laser medium pumping of narrow-band absorption spectral characteristic.It includes:

Semiconductor laser 1, this example is single bar bar linear array semiconductor laser, generally has 19 light emitting sources, partly leads Volumetric laser dielectric front surface generally plates anti-reflection film (reflectivity R≤1%), and laser spectrum width is launched during free-running generally in 2- Between 4nm (full width at half maximum);

Fast axis collimation lens 2 and slow axis collimation lens 3, the two collectively forms passing through a collimating system;Semiconductor emission laser 4 Controlled after passing through a collimating system in fast axle and the angle of divergence of slow-axis direction within 8mrad;

Body grating 5, semiconductor emission laser 4 is incident to fraction of laser light after body grating (being first laser 6 in figure) and is diffracted And semiconductor laser 1 is fed back to, diffraction efficiency is generally between 5-30%;

Now semiconductor laser 1, fast axis collimation lens 2, slow axis collimation lens 3 and body grating 5, which are collectively formed, new swashs Optical cavity is to replace the laserresonator of of semiconductor laser 1 itself, normally referred to as " exocoel ";

, typically can be according to its different diffraction bandwidth of use demand because body grating 5 has narrow-band spectrum diffraction characteristic Chosen between 0.02nm to 0.5nm (full width at half maximum), now the diffraction of the spectral width of the shoot laser 7 of exocoel and body grating 5 Bandwidth is quite or slightly wide, is effectively compressed compared to semiconductor free-running spectral width (2-4nm);In shoot laser 7 Cardiac wave length is consistent with the diffraction centre wavelength of body grating 5, because the diffraction centre wavelength of body grating 5 is related to temperature, with temperature Increase and drifted about (wavelength temperature drift coefficient is at 8-10pm/ DEG C) to long wave direction, the diffraction center of body grating 5 is generally chosen in practice Wavelength, which is slightly below, uses wavelength, then carries out fine tuning (as shown in Figure 2) to output wavelength by way of non-brake method heating;

Exocoel shoot laser 7 is incident to beam splitter 8, is partly reflected (being second laser 9 in figure) and sequentially enters light decay Subtract element 10, condenser lens 11 and atomic air chamber 12, fractional transmission (being the 3rd laser 13 in figure) swashs as final application pumping Light;Otherwise the generally planar coated optics eyeglass of beam splitter 8, its reflectivity too high can should not cause under overall lasing efficiency Drop, general control is within 2%;Optical attenuator component 10 is used to decay to laser power to be limited within 2W, to keep away Exempt from too high laser power and damage is caused to atomic air chamber 12 (this example is alkali metal atom air chamber);Condenser lens 11 is used for will Atomic air chamber 12 is incident to certain intensity after Laser Focusing, it usually needs reach and be not less than 100W/cm2Incident intensity; Include rubidium metal and buffer gas in atomic air chamber 12, the composition and air pressure of its buffer gas should increase with actual pumping rubidium laser The buffer gas of beneficial medium is same or similar, usually inert gas (helium) or its mixed gas with methane, atom Air chamber 12 can be used at room temperature;

Because the emission spectrum of incident laser 9 and rubidium atomic absorption spectrum are respectively provided with certain width, as shown in figure 3, in figure Choosing typical alkali metal laser spectrum parameter, (incident laser spectrum is that Gaussian lineshape width is 0.05nm, and buffer gas collisions add Rubidium Atomic absorption spectral line is that long-range navigation thatch line style width is 0.06nm under the conditions of width), when the spectrum of the two has overlapping (in this example Heart wavelength offset δ=0.02nm) rubidium atom is that can absorb fraction of laser light energy, the energy of absorption it is main with atomic reorganization- That is the form release of resonance fluorescence, when the centre wavelength of laser is accurately aligned with rubidium Atomic absorption core (δ=0), altogether The fluorescence that shakes reaches that when the two has deviation (δ ≠ 0), resonance fluorescence will constantly weaken with deviation δ increase, and Fig. 4 gives most by force Go out as the δ changes for changing rubidium atomic air chamber transmitting fluorescence intensity (choose incident laser spectral line width 0.05nm, rubidium is former in calculating Sub- air chamber is in 20 DEG C of room temperature and is filled with 1atm helium and 200torr methane blendeds gas);

Fluorescence measuring device 14, is inputted to signal for detecting resonance fluorescence signal intensity and being translated into electric signal Reason and control system 15;

Signal transacting and control system 15, for according to the fluorescence signal intensity detected, to body grating heater 16 Input power be adjusted with dynamic change body grating temperature, ensure in real time fluorescence measuring device 14 detect fluorescence intensity be Maximum;In a particular application, signal transacting and the programed logic of control system 15 are:Inputting fluorescence signal intensity On the basis of, increase body grating temperature, if detecting fluorescence signal enhancing, continue to increase temperature, if detecting fluorescence letter Number weaken, then reduce temperature, until detect maximum fluorescence signal intensity, and dynamic monitoring all the time and maintain optimal output wave It is long.

In concrete application example, semiconductor laser 1 can select single-shot light source, linear array list bar bar according to actual needs Or folded battle array DOPA bar packing forms.

In concrete application example, the launch wavelength of semiconductor laser 1 can be 766nm or 770nm (potassium atom D1Or D2Line pumping), 780nm or 795nm (rubidium atom D1Or D2Line pumping), 852nm or 894nm (Cs atom D1Or D2Line pumping), with And other can be applied to atom or molecule pumping wavelength with narrow absorption band, these all should be in protection scope of the present invention Within.

In concrete application example, passing through a collimating system include fast axis collimation lens 2, slow axis collimation lens 3 or other One or more kinds of combinations in lenticule with beam collimation or shaping operation, as long as disclosure satisfy that what is be actually needed Structure type all should be within protection scope of the present invention.

In concrete application example, atomic air chamber 12 includes alkali metal atom and buffer gas, and alkali metal atom is potassium, rubidium Or one kind in caesium, buffer gas is one kind in helium, neon, argon gas, Krypton and xenon, or helium, neon, argon A kind of mixed gas in a kind of and hydrocarbon gas such as methane or ethane in gas, Krypton and xenon.

In concrete application example, according to actual needs, the window of atomic air chamber 12 can for normal incidence or cloth scholar this Special angle is incident.

In concrete application example, according to actual needs, fluorescence measuring systems 14 can be photomultiplier, avalanche optoelectronic Detector, photodiode or other fluorescence detection devices.

In concrete application example, according to actual needs, heater can add for resistance heating, heating water bath, oil bath Heat or other mode of heatings.

It the above is only the preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-described embodiment, All technical schemes belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art For those of ordinary skill, some improvements and modifications without departing from the principles of the present invention should be regarded as the protection of the present invention Scope.

Claims (10)

1. a kind of adaptive narrow linewidth semiconductor laser frequency regulator, it is characterised in that including:Semiconductor laser (1), light beam Colimated light system, body grating (5), heater, atomic air chamber (12), fluorescence measuring device (14) and signal transacting and control are Unite (15), the semiconductor laser (1), passing through a collimating system and body grating (5) three form exocoel, in the body grating (5) under diffraction feedback effect behind arrowband, exocoel shoot laser (7) spectrum compares the semiconductor laser (1) during free-running Narrowed;Part shoot laser (7) is incident to atomic air chamber (12) and excites alkali metal atom to produce resonance fluorescence, the fluorescence Measuring system (14) detection fluorescence signal and input signal processing and control system (15), the signal transacting and control system (15) cardiac wave in grating temperature and then change shoot laser is changed by adjusting the heating power of heater in body grating (5) It is long.
2. adaptive narrow linewidth semiconductor laser frequency regulator according to claim 1, it is characterised in that the outgoing swashs Light (7) sequentially passes through beam splitter (8), optical attenuator component (10), condenser lens (11) and enters atomic air chamber (12).
3. adaptive narrow linewidth semiconductor laser frequency regulator according to claim 1, it is characterised in that the semiconductor Laser 1 is single-shot light source, linear array list bar bar or folded battle array DOPA bar packing forms.
4. adaptive narrow linewidth semiconductor laser frequency regulator according to claim 1, it is characterised in that the semiconductor The launch wavelength of laser 1 is 766nm or 770nm, 780nm or 795nm, 852nm or 894nm.
5. adaptive narrow linewidth semiconductor laser frequency regulator according to claim 1, it is characterised in that the light beam is accurate Direct line system includes fast axis collimation lens (2), one kind in slow axis collimation lens (3) or combination.
6. the adaptive narrow linewidth semiconductor laser frequency regulator according to any one in Claims 1 to 5, its feature exists In the atomic air chamber (12) includes alkali metal atom and buffer gas, and the alkali metal atom is one in potassium, rubidium or caesium Kind, the buffer gas is one kind in helium, neon, argon gas, Krypton and xenon, or helium, neon, argon gas, Krypton With a kind of mixed gas in a kind of and hydrocarbon gas such as methane or ethane in xenon.
7. the adaptive narrow linewidth semiconductor laser frequency regulator according to any one in Claims 1 to 5, its feature exists In the window of the atomic air chamber (12) is normal incidence or brewster angle incidence.
8. the adaptive narrow linewidth semiconductor laser frequency regulator according to any one in Claims 1 to 5, its feature exists In the fluorescence measuring systems (14) are photomultiplier, avalanche photodetector, photodiode or other fluorescence detections Device.
9. the adaptive narrow linewidth semiconductor laser frequency regulator according to any one in Claims 1 to 5, its feature exists In the heater is resistance heating, heating water bath or oil bath heating.
10. the adaptive narrow linewidth semiconductor laser frequency regulator according to any one in Claims 1 to 5, its feature It is, it is accurate right that the centre wavelength and alkali metal atom absorption line for showing shoot laser (7) when fluorescence signal is most strong are realized Standard, now signal transacting and control system (15) keep constant heating power and grating temperature;Change when due to external environment When causing the laser center wavelength to shift, the signal transacting will automatically adjust heating power until glimmering with control system (15) Optical signal reaches most strong again.
CN201710657183.8A 2017-08-03 2017-08-03 A kind of adaptive narrow linewidth semiconductor laser frequency regulator CN107293939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710657183.8A CN107293939A (en) 2017-08-03 2017-08-03 A kind of adaptive narrow linewidth semiconductor laser frequency regulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710657183.8A CN107293939A (en) 2017-08-03 2017-08-03 A kind of adaptive narrow linewidth semiconductor laser frequency regulator

Publications (1)

Publication Number Publication Date
CN107293939A true CN107293939A (en) 2017-10-24

Family

ID=60104336

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710657183.8A CN107293939A (en) 2017-08-03 2017-08-03 A kind of adaptive narrow linewidth semiconductor laser frequency regulator

Country Status (1)

Country Link
CN (1) CN107293939A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108303184A (en) * 2018-01-23 2018-07-20 哈尔滨工业大学 A kind of device and method of real-time monitoring tunable laser Output of laser wavelength and energy
CN108613670A (en) * 2018-03-29 2018-10-02 北京航天控制仪器研究所 A kind of exploring laser light frequency regulator and method for atomic spin gyro

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1341986A (en) * 2001-10-19 2002-03-27 清华大学 Frequency-stabilizing device of fiber-optical grating external cavity semiconductor laser and its frequency-stabilizing method
CN104617481A (en) * 2014-12-31 2015-05-13 西南技术物理研究所 Flake type semiconductor laser pumping alkali metal laser system
CN105048279A (en) * 2015-07-30 2015-11-11 中国科学院长春光学精密机械与物理研究所 Semiconductor laser light source output device for alkali metal vapor laser device pumping
CN106451071A (en) * 2016-11-30 2017-02-22 武汉光迅科技股份有限公司 Narrow-linewidth semiconductor laser device based on volume Bragg grating

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1341986A (en) * 2001-10-19 2002-03-27 清华大学 Frequency-stabilizing device of fiber-optical grating external cavity semiconductor laser and its frequency-stabilizing method
CN104617481A (en) * 2014-12-31 2015-05-13 西南技术物理研究所 Flake type semiconductor laser pumping alkali metal laser system
CN105048279A (en) * 2015-07-30 2015-11-11 中国科学院长春光学精密机械与物理研究所 Semiconductor laser light source output device for alkali metal vapor laser device pumping
CN106451071A (en) * 2016-11-30 2017-02-22 武汉光迅科技股份有限公司 Narrow-linewidth semiconductor laser device based on volume Bragg grating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108303184A (en) * 2018-01-23 2018-07-20 哈尔滨工业大学 A kind of device and method of real-time monitoring tunable laser Output of laser wavelength and energy
CN108613670A (en) * 2018-03-29 2018-10-02 北京航天控制仪器研究所 A kind of exploring laser light frequency regulator and method for atomic spin gyro

Similar Documents

Publication Publication Date Title
Soffer et al. Continuously tunable, narrow‐band organic dye lasers
Gerry et al. MEASUREMENT OF 10.6‐μ CO2 LASER TRANSITION PROBABILITY AND OPTICAL BROADENING CROSS SECTIONS
Duarte Solid-state multiple-prism grating dye-laser oscillators
Ruddock et al. Bandwidth‐limited subpicosecond pulse generation in mode‐locked cw dye lasers
US5432610A (en) Diode-pumped power build-up cavity for chemical sensing
JP5137855B2 (en) Intermediate IR laser instrument for analyzing gas samples and method of use thereof
Sorokin et al. End-pumped stimulated emission from a thiacarbocyanine dye
Wallenstein Generation of narrowband tunable VUV radiation at the Lyman-α wavelength
Lempicki et al. Characteristics of the nd+ 3: seocl2 liquid laser
Hänsch Repetitively pulsed tunable dye laser for high resolution spectroscopy
Barnes et al. Ho: Tm: YLF laser amplifiers
JP2013546189A (en) Frequency comb source with large comb spacing
Sahar et al. Excited singlet-state absorption in dyes and their effect on dye lasers
Stoeckel et al. Quantitative measurements of very weak H2O absorption lines by time resolved intracavity laser spectroscopy
Gohle et al. A frequency comb in the extreme ultraviolet
Ozawa et al. High harmonic frequency combs for high resolution spectroscopy
US20020071468A1 (en) Injection seeded F2 laser with pre-injection filter
Sinclair Choice of mirror curvatures for gas laser cavities
Hartig Two-photon resonant four-wave mixing in atomic sodium vapour
Stokes et al. A high efficiency dye laser tunable from the UV to the IR
Farmer et al. TIME‐RESOLVED STIMULATED EMISSION SPECTRA OF AN ORGANIC DYE LASER
US3684979A (en) Transverse dye laser stimulation with a pulsed nitrogen laser
US5249189A (en) Tunable lasers pumped by visible laser diodes
US3277392A (en) Adjustable feedback laser modulator
Myer et al. Dye laser stimulation with a pulsed N2 laser line at 3371 Å

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination