CN107370016B - Method and device for generating communication band 1.5-micron laser wavelength standard - Google Patents
Method and device for generating communication band 1.5-micron laser wavelength standard Download PDFInfo
- Publication number
- CN107370016B CN107370016B CN201710690811.2A CN201710690811A CN107370016B CN 107370016 B CN107370016 B CN 107370016B CN 201710690811 A CN201710690811 A CN 201710690811A CN 107370016 B CN107370016 B CN 107370016B
- Authority
- CN
- China
- Prior art keywords
- laser
- rubidium atom
- radio frequency
- wavelength
- excited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function
Abstract
the invention provides a method for generating a communication band 1.5-micron laser wavelength standard, which comprises the following steps: (1) enabling laser emitted by a laser diode coated with an antireflection film to pass through a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency, and carrying out mode selection on the frequency of the laser; (2) the laser after the mode selection is fed back to the laser diode by the laser cavity mirror; (3) and the laser diode outputs laser wavelength standard which forms laser on the 5P-4D transition wavelength 1529nm corresponding to rubidium atom filtering. The invention realizes a communication waveband 1.5 micrometer laser wavelength standard by utilizing the anti-reflection film plated laser diode, the radio-frequency excited rubidium atom 5P-4D excited state 1529nm filter and a laser cavity mirror feedback method, has long-term stability and accuracy, and can provide a long-term stable 1.5 micrometer laser wavelength standard for the international novel optical communication field.
Description
[ technical field ] A method for producing a semiconductor device
the invention belongs to the technical field of space optical communication and laser, and particularly relates to a communication waveband 1.5-micrometer laser wavelength standard device and a related device thereof
[ background of the invention ]
When one speaks of optical communication, lasers, optical fibers and high-speed data transmission are naturally contemplated, as they are representative of modern optical communication technology. However, optical communication in the modern sense stems from the proposal of the einstein stimulated emission concept and the formal emergence of lasers. Due to the rapid development of fiber-optic communication in the field of lasers and the like in recent years, the laser wavelength standard of the communication band has a firmer foundation and a clear application target, and higher requirements are made on the performance index of the laser wavelength standard. In addition to the requirements of good output beam quality, high operating frequency and narrow emission spectrum, the light source also needs to consider the thermal stability, frequency stability, operating life and the like of the laser. In recent years, mature technologies and devices of optical fiber communication are introduced into satellite laser communication in various countries, and accordingly, the working band also develops to the 1.5 micron band. Because multimode lasers have a wide spectrum, atmospheric dispersion and optical system errors cause a certain pulse spreading, which imposes a non-negligible limitation on the communication rate. However, although the line width of the single-mode laser for communication wavelength can be very narrow, the single-mode laser has long-term frequency drift, no accuracy and no absolute frequency reference, and has poor anti-interference capability to the environment, and the defects seriously restrict the development of the optical communication field.
The commonly applied communication band 1.5 micron laser is a fiber laser, the line width is narrow, the temperature drift coefficient is small, but the absolute frequency reference laser standard of the band is complex, and the system cost is high. For this reason, internationally, in order to reach the 1.5 μm laser wavelength standard as a communication band having an absolute frequency value, it is necessary to lock the laser frequency to the excited state of acetylene molecules or rubidium atoms. On the one hand, however, the amplitude of the acetylene molecule signal is very small, and the frequency locking process is complex; on the other hand, in a frequency stabilization system of an international conventional rubidium atom excited state 1529nm (rubidium atom 1529nm, 5P-4D excited state), another set of expensive frequency stabilization pump laser and a complex servo loop are needed, and the cost is high and the volume is huge. In the prior art, no system for realizing the communication waveband 1.5-micrometer laser wavelength standard for immunity to temperature and current noise by directly exciting a rubidium atom gas chamber by using radio frequency without adding expensive frequency stabilization pump laser is available at present. On the other hand, rf excitation of a rubidium atom gas cell emits strong fluorescence lines and is generally not suitable for use as a spatial optical filter.
[ summary of the invention ]
the invention aims to overcome the defects of the prior art, realizes a long-term stable narrow-linewidth communication waveband 1.5-micrometer laser wavelength standard without a servo system by combining a radio-frequency-excited rubidium atom filtering technology, and can be applied to the field of optical communication as a communication waveband laser absolute wavelength standard.
the idea of the invention is to consider that the laser wavelength standard of 1.5 microns of lasing output has good coherence, and although there are strong fluorescence lines, due to their anisotropy, they do not interfere with the laser wavelength standard of 1.5 microns of lasing output.
In order to obtain a communication waveband 1.5 micrometer laser wavelength standard with low cost, narrow line width, long-term stable frequency and high interference resistance so as to improve the communication speed and reliability, the laser frequency is stabilized on a 5P-4D transition wavelength 1529nm corresponding to rubidium atom filtering by combining a rubidium atom 5P-4D excited state filtering technology excited by radio frequency, and an expensive frequency stabilizing pump laser is not required to be added, so that the communication waveband 1.5 micrometer laser wavelength standard is directly realized. The 1.5 micron laser wavelength standard obtained by this method should have a narrower line width than that obtained by the conventional approach, and has better long-term stability, smaller device volume and lower production cost.
Therefore, the invention provides a standard device of laser wavelength with a communication waveband of 1.5 microns, which forms laser on a 5P-4D transition wavelength 1529nm corresponding to rubidium atom filtering, and comprises a laser diode 1 coated with an antireflection film, a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency and a laser cavity mirror 10;
The rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency comprises a first polarizer device 2, a first permanent magnet 3, a rubidium atom electrodeless discharge lamp, a second permanent magnet 8 and a second polarizer 9 which are sequentially arranged on a light path of a laser diode 1, wherein the rubidium atom electrodeless discharge lamp comprises a rubidium atom air chamber 6 arranged in an electrodeless lamp shell 4, a radio frequency coil 5 and a heating device, the radio frequency coil 5 is arranged outside the rubidium atom air chamber 6, and two ends of the radio frequency coil 5 are connected with a radio frequency module 12 through radio frequency connecting wires 11.
in the invention, the central wavelength of the transmission spectrum of the antireflection film-coated laser diode 1 is consistent with the central wavelength of a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency.
according to a preferred embodiment, the laser cavity mirror 10 is coated with a reflecting film, the reflectivity of the reflecting film to laser with the wavelength of 1.5 microns is not lower than 80%, so that the semiconductor laser tube coated with the antireflection film directly outputs laser wavelength standard which forms lasing above the 5P-4D transition wavelength 1529nm corresponding to rubidium atom filtering.
In the present invention, the temperature of the rubidium atom gas chamber 6 is 120 ℃.
according to a preferred embodiment, the device further comprises a diaphragm 16 arranged in the light path, which diaphragm is arranged between the electrodeless lamp housing 4 and the second permanent magnet 8. The diaphragm is used for enabling the laser after mode selection to be fed back to the light path of the laser diode plated with the antireflection film through the laser cavity mirror, and the fluorescence emitted by the radio-frequency excited rubidium atoms is reduced.
According to an alternative embodiment, the laser cavity mirror 10 can be replaced by a reflecting device comprising a fiber coupler 13, a fiber 14 and a fiber coating reflecting mirror 15 connected in sequence, wherein the fiber coating reflecting mirror 15 is a high reflecting mirror with the wavelength of 1.5 microns.
In the invention, the rubidium atom electrodeless gas discharge lamp takes a radio frequency module as an excitation source, and the radio frequency is 250 MHz.
The invention also provides a method for generating the standard of the laser wavelength of 1.5 microns in communication waveband, which adopts the rubidium atom excited state filtering technology excited by radio frequency, so that a light beam emitted by the laser diode coated with the antireflection film passes through a rubidium atom air chamber excited by radio frequency and having the temperature of 120 ℃, after the mode selection is carried out under the action of magnetic field optical rotation, the light beam is fed back to the laser diode coated with the antireflection film by the cavity mirror, and the light beam is oscillated and amplified in a resonant cavity formed by an output light end face of the semiconductor laser diode and the cavity mirror to exceed the oscillation threshold of a laser, so that the semiconductor laser tube coated with the antireflection film directly forms the laser wavelength standard of the lasing on the 5P-4D transition wavelength 1529nm corresponding to the rubidium atom filtering.
Based on the above thought, the method of the invention comprises the following steps:
(1) Enabling laser emitted by a laser diode coated with an antireflection film to pass through a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency, and carrying out mode selection on the frequency of the laser;
(2) The laser after the mode selection is fed back to the laser diode plated with the antireflection film by the laser cavity mirror;
(3) Under the combined action of the step (1) and the step (2), the output light end face of the anti-reflection film-coated laser diode and a resonant cavity formed by the cavity mirror laser cavity mirror oscillate and amplify to exceed the oscillation threshold of a laser, so that the anti-reflection film-coated semiconductor laser tube outputs a laser wavelength standard which forms laser radiation above the 5P-4D transition wavelength 1529nm corresponding to rubidium atom filtering.
The invention realizes a communication waveband 1.5 micrometer laser wavelength standard by utilizing a laser diode coated with an anti-reflection film, a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency and a laser cavity mirror feedback method. Due to the narrow linewidth frequency-selecting characteristic of the rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency, the long-term stability and accuracy of the laser cavity mirror feedback output 1.5 micron laser wavelength standard are ensured.
Because the anti-reflection film coated laser diode has no competition of an inner cavity mode, the output frequency of the anti-reflection film coated laser diode has good immunity to fluctuation noise of factors such as external environment factors, the working temperature of the diode, the working current of the diode and the like, and the anti-reflection film coated laser diode can continuously work on the frequency corresponding to the radio-frequency excited rubidium atom 5P-4D excited state 1529nm filter for a long time. Therefore, the communication waveband 1.5-micrometer laser wavelength standard device has the advantages of miniaturization and low cost, and can generate a communication waveband 1.5-micrometer laser wavelength standard with high anti-interference performance and long-term stability.
In addition, a semiconductor laser tube coated with an anti-reflection film is used as a laser light source, and the transition of a rubidium atom 5P-4D excited state 1529nm after radio frequency excitation is used as a standard laser frequency reference, the laser wavelength standard obtained by the device and the method has the characteristics of stable central frequency, insensitivity to the temperature and current of a laser diode, namely immunity to temperature and current noise, and can provide a long-term stable 1.5-micrometer laser wavelength standard for the international novel optical communication field.
[ description of the drawings ]
FIG. 1 is a schematic flow chart of a method for generating a standard of a laser wavelength of 1.5 μm in a communication band according to the present invention;
FIG. 2 is a schematic view of the structure of the apparatus of example 1;
FIG. 3 is a schematic structural view of an apparatus according to example 2;
FIG. 4 is a diagram of the energy levels of the ground state 5S to the excited states 5P and 4D of two isotopes, rubidium 85 and rubidium 87, of a rubidium atom;
Fig. 5 is a graph showing the relationship between the standard wavelength of the laser wavelength of 1.5 μm in the communication band of example 1 and the temperature and current of the laser diode.
Fig. 6 shows the measurement results of the standard frequency of the laser wavelength of 1.5 μm in the communication band of example 2 for 24 hours.
Wherein: 1-a laser diode plated with an antireflection film, 2-a first polarizing device, 3-a first permanent magnet, 4-an electrodeless lamp shell, 5-a radio frequency coil, 6-a rubidium atom air chamber, 7-a heating rod, 8-a second permanent magnet, 9-a second polarizer, 10-a laser cavity mirror, 11-a radio frequency connecting wire, 12-a radio frequency module, 13-an optical fiber coupler, 14-an optical fiber, 15-an optical fiber coating reflecting mirror and 16-a diaphragm.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Fig. 1 is a schematic flow chart of an embodiment of the method for generating the standard of the wavelength of 1.5-micrometer laser in the communication band according to the present invention.
The method comprises the following steps:
101, selecting a mode of the frequency of laser emitted by an antireflection film coated diode through a filter by utilizing the temperature and magnetic field tuning characteristics and long-term stability of a narrow linewidth transmission spectrum of a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency;
and 102, enabling laser emitted by the laser diode coated with the antireflection film to pass through a narrow linewidth mode selection of a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency, and feeding back the laser diode coated with the antireflection film by a laser cavity mirror.
And 103, under the combined action of the mode selection of the rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency and the feedback of the laser cavity mirror, outputting the laser diode coated with the antireflection film to form a lasing laser wavelength standard above the 5P-4D transition wavelength 1529nm corresponding to the rubidium atom filter.
Further, on the basis of the embodiment shown in fig. 1, the semiconductor laser gain medium is replaced by another laser gain medium, so that a cavity-free laser cavity mirror feedback laser using a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency is formed. Note that the medium described here is an antireflection film-coated laser gain medium whose surface is still specifically required by the present invention. The other laser gain media comprise a solid laser gain medium, a gas laser gain medium, a liquid laser gain medium and an optical fiber laser gain medium, and the rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency and the laser cavity mirror feedback laser can be used according to the method provided by the invention as long as the gain frequency spectrum of the laser gain media has the corresponding frequency with the transmission frequency spectrum of the rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency.
fig. 2 is a schematic structural diagram of an apparatus according to embodiment 1 of the present invention. The device comprises, arranged on the light path: the laser comprises a laser diode 1 coated with an antireflection film, a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency and a laser cavity mirror 10. The optical filter is composed of a first polarizer 2, a first permanent magnet 3, a second permanent magnet 8, a second polarizer 9 and a rubidium atom electrodeless discharge lamp, wherein the rubidium atom electrodeless discharge lamp is composed of a rubidium atom air chamber 6, a radio frequency coil 5, a heating rod 7, a radio frequency connecting wire 11, a radio frequency module 12 and an electrodeless lamp shell 4. The radio frequency coil 5 is arranged outside the rubidium atom gas chamber 6, the radio frequency coil 5 is connected with the radio frequency module 12 through a radio frequency connecting wire 11, and the frequency of the radio frequency module 12 is 250 MHz. The temperature of the rubidium atom gas cell 6 was set to 120 ℃ by the heating rod 7.
The laser diode 1 coated with the antireflection film emits spontaneous emission fluorescence with the spectral width reaching nm magnitude, light energy of the fluorescence medium frequency spectrum falling in the passband width of the rubidium atom electrodeless discharge lamp passes through a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency, is fed back to the laser diode 1 coated with the antireflection film under the reflection of a laser cavity mirror 10, oscillates and amplifies in a resonant cavity formed by an output light end face of the semiconductor laser diode and the cavity mirror until the oscillation threshold value of the laser is exceeded, and the laser cavity mirror 10 outputs laser wavelength standard which forms the laser on the 5P-4D transition wavelength 1529nm corresponding to the rubidium atom filtering. The radio frequency module 12 is used for exciting ground state rubidium atoms to an excited state, and the frequency position and transmittance of a transmission peak of the 1529nm filter of the radio frequency excited rubidium atoms 5P-4D excited state are adjusted by adjusting the temperature of an internal rubidium atom gas chamber and adjusting a magnetic field.
Example 2
Fig. 3 is a schematic structural diagram of an apparatus according to embodiment 2 of the present invention, which is an improved apparatus, and includes: the anti-reflection film coated laser diode 1 comprises a rubidium atom electrodeless discharge lamp consisting of a rubidium atom air chamber 6, a radio frequency coil 5, a heating rod 7, a radio frequency connecting wire 11, a radio frequency module 12 and an electrodeless lamp shell 4, a rubidium atom 5P-4D excited state 1529nm filter consisting of a first polarization device 2, a first permanent magnet 3, a diaphragm 16, a second permanent magnet 8, a second polarizer 9 and the rubidium atom electrodeless discharge lamp and excited by radio frequency, an optical fiber coupler 13 and an optical fiber 14 with an optical fiber coating reflection mirror 15.
The difference from the embodiment 1 is that, firstly, the antireflection film coated laser diode 1 emits the spontaneous emission fluorescence with the spectral width of nm order, and the spontaneous emission fluorescence is coupled into the optical fiber 14 with the optical fiber coating reflecting mirror 15 by the optical fiber coupler 13 after passing through the filter of the rubidium atom 5P-4D excited state 1529nm excited by radio frequency, wherein the optical fiber coating reflecting mirror 15 is a high reflecting mirror with the wavelength of 1.5 microns. The laser diode coated with the antireflection film is fed back under the reflection of the optical fiber coating reflection mirror 15, the laser diode is oscillated and amplified in a resonant cavity formed by the output light end face of the semiconductor laser diode and the optical fiber coating reflection mirror 15 until the oscillation threshold of the laser diode is exceeded, and the laser wavelength standard of forming the laser emission is output at the second polarizer 9 and is above the 5P-4D transition wavelength 1529nm corresponding to the rubidium atom filtering.
Secondly, a diaphragm 16 is arranged on the light path, and the diaphragm is arranged between the electrodeless lamp shell 4 and the second permanent magnet 8. The diaphragm is used for enabling the laser after mode selection to be fed back to the light path of the laser diode plated with the antireflection film through the laser cavity mirror, and the fluorescence emitted by the radio-frequency excited rubidium atoms is reduced. The other elements have the same functions and positional relationships as those of embodiment 1.
Further, on the basis of the above embodiment 2 shown in fig. 3, the length of the optical fiber 14 is increased, that is, the length of the resonant cavity formed by the output light end surface of the semiconductor laser diode and the optical fiber coating reflection mirror 15 is increased, so that the free spectrum range of the laser cavity is reduced. The laser diode 1 coated with the antireflection film emits spontaneous emission fluorescence with the spectral width reaching nm magnitude, oscillation output can be formed only by the laser frequency at the transmission spectrum center of a rubidium atom 5P-4D excited state 1529nm optical filter excited by radio frequency, the laser frequency stability is improved, and the standard output of the laser wavelength of a communication waveband 1.5 microns is realized.
Fig. 4 is an energy level diagram of the ground state 5S to the excited state 5P, 4D of two isotopes, rubidium 85 and rubidium 87, of a rubidium atom.
Fig. 5 is a graph showing the relationship between the standard wavelength of the laser wavelength of 1.5 μm in the communication band of example 1 and the temperature and current of the laser diode.
Wherein the abscissa of fig. 5(a) is the temperature of the laser diode 1, and the ordinate is the wavelength value of the communication band 1.5 μm laser wavelength standard of example 1. As can be seen from the graph, when the driving current of the laser diode 1 is not changed, the reading of the wavelength value of the 1.5 μm laser wavelength standard in the communication band of embodiment 1 of the present invention on the wavelength meter is also stabilized at 1.5 μm as the temperature of the laser diode 1 changes.
The abscissa of fig. 5(b) is the drive current of the laser diode 1, and the ordinate is the wavelength value of the 1.5 μm laser wavelength standard of the communication band. As can be seen from the graph, when the temperature of the laser diode 1 is not changed, the wavelength value of the communication band 1.5 μm laser wavelength standard of the embodiment 1 of the present invention is stable at 1.5 μm on the wavelength meter as the driving current of the laser diode 1 is changed. Fig. 5 shows that the standard of the communication band 1.5 μm laser wavelength of example 1 is immune to the temperature and current noise of the laser diode 1.
Fig. 6 shows the measurement results of the standard frequency of the laser wavelength of 1.5 μm in the communication band of example 1 for 24 hours. Fig. 6 shows time on the abscissa and frequency values of the standard of the laser wavelength of 1.5 μm in the communication band of example 1 on the ordinate. As can be seen from the figure, the frequency of the 1.5 μm laser wavelength standard in the communication band of example 1 of the present invention has no drift in the readings on the wavemeter over the 24 hour time range. Fig. 6 shows that the communication band 1.5 μm laser wavelength standard of example 1 has long-term frequency stability.
In conclusion, the laser diode coated with the antireflection film and the radio-frequency excited rubidium atom 5P-4D excited state 1529nm filter realize the standard of the laser wavelength of 1.5 microns in a communication waveband, and compared with all other existing standards of the laser wavelength of 1.5 microns, the generation principle and the device of the laser diode are essentially different.
In addition, although the rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency has a strong fluorescence line inside and is generally considered to be not suitable for being used as a spatial optical filter, the invention avoids the influence caused by the defect through a skillful and unique design, and because the 1.5 micron laser wavelength standard of the lasing output has good coherence, the anisotropic fluorescence line existing inside the rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency does not cause interference to the 1.5 micron laser wavelength standard of the lasing output.
In addition, the invention is not limited to the laser diode as the gain medium, and also comprises other solid gain media with the end faces plated with antireflection films. The invention is not limited to a specific alkali metal gas atomic line, but is applicable to all possible lines corresponding to various alkali metal atomic gas filters. The invention is not limited to a specific rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency, but is also applicable to atom filters realized by other modes.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the invention without departing from the spirit and scope of the invention.
Claims (6)
1. The laser wavelength standard device with the communication waveband of 1.5 microns is characterized in that the device forms laser radiation on a 5P-4D transition wavelength 1529nm corresponding to rubidium atom filtering, and the device comprises a laser diode (1) coated with an antireflection film, a rubidium atom 5P-4D excitation state 1529nm filter excited by radio frequency and a laser cavity mirror (10); the laser cavity mirror (10) is plated with a reflecting film;
the rubidium atom 5P-4D excited state 1529nm optical filter excited by radio frequency comprises a first polarizing device (2), a first permanent magnet (3), a rubidium atom electrodeless discharge lamp, a second permanent magnet (8) and a second polarizer (9) which are sequentially arranged on a light path of a laser diode (1) plated with an antireflection film, wherein the rubidium atom electrodeless discharge lamp comprises a rubidium atom air chamber (6) arranged in an electrodeless lamp shell (4), a radio frequency coil (5) arranged outside the rubidium atom air chamber (6) and a heating device, the temperature of the rubidium atom air chamber (6) is 120 ℃, two ends of the radio frequency coil (5) pass through a radio frequency connecting wire (11) and a radio frequency module (12), and the radio frequency is 250 MHz.
2. The device according to claim 1, wherein the central wavelength of the transmission spectrum of the antireflection film coated laser diode (1) is the same as the central wavelength of a filter of 1529nm in an excited state of 5P-4D of rubidium atoms excited by radio frequency.
3. The device of claim 1, wherein the reflective film has a reflectivity of no less than 80% for a laser having a wavelength of 1.5 microns.
4. The device according to claim 1, characterized in that the device further comprises a diaphragm (16) arranged between the electrodeless lamp envelope (4) and the second permanent magnet (8).
5. The device according to claim 4, characterized in that the laser cavity mirror (10) is replaced by a reflecting device, which comprises a fiber coupler (13), a fiber (14) and a fiber coating reflecting mirror (15) connected in sequence, wherein the fiber coating reflecting mirror (15) is a high reflecting mirror with the wavelength of 1.5 microns.
6. A method for generating a communication band 1.5 micron laser wavelength standard, the method comprising the steps of:
(1) Enabling laser emitted by a laser diode coated with an antireflection film to pass through a rubidium atom 5P-4D excited state 1529nm filter excited by radio frequency, and carrying out mode selection on the frequency of the laser;
(2) the laser after the mode selection is fed back to the laser diode plated with the antireflection film by the laser cavity mirror along the original light path;
(3) Under the combined action of the step (1) and the step (2), the output light end face of the anti-reflection film-coated laser diode and a resonant cavity formed by the laser cavity mirror oscillate and amplify to exceed the oscillation threshold of a laser, so that the anti-reflection film-coated semiconductor laser tube outputs a laser wavelength standard which forms laser radiation above the 5P-4D transition wavelength 1529nm corresponding to rubidium atom filtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710690811.2A CN107370016B (en) | 2017-08-14 | 2017-08-14 | Method and device for generating communication band 1.5-micron laser wavelength standard |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710690811.2A CN107370016B (en) | 2017-08-14 | 2017-08-14 | Method and device for generating communication band 1.5-micron laser wavelength standard |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107370016A CN107370016A (en) | 2017-11-21 |
| CN107370016B true CN107370016B (en) | 2019-12-06 |
Family
ID=60310313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710690811.2A Active CN107370016B (en) | 2017-08-14 | 2017-08-14 | Method and device for generating communication band 1.5-micron laser wavelength standard |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107370016B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854659A (en) * | 2019-09-30 | 2020-02-28 | 浙江法拉第激光科技有限公司 | Double-frequency Faraday semiconductor laser and implementation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110850703B (en) * | 2019-09-30 | 2021-09-07 | 浙江法拉第激光科技有限公司 | High-stability optical frequency atomic clock based on double-frequency Faraday semiconductor laser |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969178A (en) * | 2010-09-21 | 2011-02-09 | 北京大学 | External cavity feedback laser generation method and laser |
| CN102386556B (en) * | 2011-09-22 | 2013-08-07 | 北京大学 | Atomic excitation state anomalous dispersion atomic filter and method for filtering signal light |
| CN102593694B (en) * | 2012-02-15 | 2013-12-04 | 北京大学 | Active laser frequency standard based on four-energy-level quantum system |
| CN203326358U (en) * | 2013-07-25 | 2013-12-04 | 上海高意激光技术有限公司 | Optical fiber coupling semiconductor laser with long coherent length |
| CN106524897A (en) * | 2016-09-27 | 2017-03-22 | 深圳市中图仪器股份有限公司 | Frequency stabilization apparatus and method for laser interferometer |
-
2017
- 2017-08-14 CN CN201710690811.2A patent/CN107370016B/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854659A (en) * | 2019-09-30 | 2020-02-28 | 浙江法拉第激光科技有限公司 | Double-frequency Faraday semiconductor laser and implementation method thereof |
| CN110854659B (en) * | 2019-09-30 | 2021-07-20 | 浙江法拉第激光科技有限公司 | Double-frequency Faraday semiconductor laser and implementation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107370016A (en) | 2017-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101846965B (en) | Method for pumping rubidium bubble for outputting standard frequency by lamp pump rubidium gas laser and rubidium atomic clock | |
| RU2269849C2 (en) | Narrow-band fiber lasers of great power with expanded range of wave lengths | |
| CN110336182B (en) | Dark cavity laser | |
| US5177562A (en) | Stability compensated broadband source and fiber interferometer | |
| CN110850703B (en) | High-stability optical frequency atomic clock based on double-frequency Faraday semiconductor laser | |
| US8736845B2 (en) | Frequency stabilized laser system | |
| CN110854659B (en) | Double-frequency Faraday semiconductor laser and implementation method thereof | |
| CN110018631A (en) | The Cs atom microwave frequency standard and its implementation detected using faraday's laser pumping | |
| CN107370016B (en) | Method and device for generating communication band 1.5-micron laser wavelength standard | |
| CN112542757B (en) | Faraday laser locked by cavity film of resonant cavity and preparation method thereof | |
| JP2002519868A (en) | High stability light source | |
| CN102377431A (en) | Coherent population trapping atomic clock and realization method thereof | |
| CN113097854B (en) | Faraday active optical clock-based dark cavity laser and implementation method thereof | |
| CN109802286A (en) | Single-longitudinal mode erbium doping optical fibre laser based on the auxiliary chamber of Pear-Shaped | |
| CN112018590B (en) | Multi-wavelength non-atomic resonance Faraday semiconductor laser | |
| CN203377480U (en) | All-fiber external-cavity tunable fiber laser | |
| CN112013828A (en) | Nuclear magnetic resonance gyroscope with integrated pumping laser and atomic gas chamber | |
| CN103427318A (en) | All-fiber external cavity tunable fiber laser | |
| CN114199222B (en) | Active resonance optical fiber gyroscope | |
| CN115173216A (en) | Magic cavity length laser with frequency-to-cavity length thermal noise immunity and implementation method | |
| CN103885324B (en) | Optical clock based on full-optical frequency stabilization and manufacturing method of optical clock | |
| GB2413697A (en) | Uncooled semiconductor laser | |
| EP0476914B1 (en) | Temperature stabilized broadband light source | |
| CN113285337B (en) | Anti-resonance laser based on hollow optical fiber atomic air chamber | |
| CN114883900A (en) | Line offset high repetition frequency femtosecond laser based on photoetching multimode optical fiber and detection system thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |