WO2012103823A2

WO2012103823A2 - Phase shifter, coupler and methods for their production

Info

Publication number: WO2012103823A2
Application number: PCT/CN2012/072298
Authority: WO
Inventors: 许牧; 高磊; 苏翼凯; 李菲
Original assignee: 华为技术有限公司; 上海交通大学
Priority date: 2012-03-14
Filing date: 2012-03-14
Publication date: 2012-08-09
Also published as: CN102763264A; WO2012103823A3; CN102763264B

Abstract

A phase shifter, a coupler and methods for their production are provided by the embodiments of the present invention, which relates to the field of photonics, wherein the methods can reduce optical damage, improve the utilization ratio of the light field energy, and improve the response speed of device. The phase shifter comprises: a base silicon layer and an insulated layer covering the base silicon layer; a top silicon layer covering the insulated layer, wherein the top silicon layer includes two isolation grooves， which are separated by a common groove wall with each other, wherein the common groove wall is a waveguide, and the height of the waveguide is higher than the outside groove walls of the two isolation grooves; a first cathode metal layer and a second cathode metal layer covering two outside groove walls of the two isolation grooves respectively; an electro-optic polymer material layer covering the first cathode metal layer，the second cathode metal layer and the top silicon layer; an upper electrode formed on the top of the electro-optic polymer material layer, and the slits formed between the upper electrode and the waveguide and filled by the electro-optic polymer material layer; a second protect layer covering the upper electrode and the electro-optic polymer material layer. The embodiments of the present invention are applied to the electro-optic phase shift.

Description

Phase shifter and coupler and manufacturing method thereof

The present invention relates to the field of integrated silicon-based photonics, and more particularly to a phase shifter and coupler and a method of fabricating the same. Background technique

As the key to realize electrical signal-to-optical signal conversion, silicon-based phase shifter is the core device for realizing silicon-based high-speed modulation. It is of great significance in the field of integrated silicon-based photonics. Its research work has become academia and industry. hot spot. For silicon materials, the carrier dispersion effect is usually used to achieve the purpose of phase shifting due to the lack of linear electro-optic effect. Generally speaking, in silicon-based devices, the change of refractive index mainly depends on the change of free carrier concentration. It mainly has two problems: First, the ordinary silicon-based waveguide has limited limitation on the optical field, and the modulation efficiency is not High, typically requiring waveguides of tens of microns to a few millimeters in length to phase shift, greatly limits the high density integration of silicon-based devices. Second, the free charge carriers dispersion (FCD) and free charge carrier absorption (FCA) effects associated with changes in carrier concentration cause delays in the response time of electro-optical conversion. The increase in the rate of the silicon based phase shifter is greatly limited.

In recent years, with the deepening of research on surface plasmon effects, some phase shifter designs based on surface plasmon waveguide structures have emerged. However, the performance of these new surface-plasma phase shift modulators is not satisfactory. The main reasons can be attributed to the following aspects: First, the waveguide structure design has defects, the processing technology is high, and it is brought by the plasma effect. The loss is large and the performance is unstable. Second, it relies heavily on the silicon-based carrier effect, and the modulation signal has a large delay and severe distortion. Summary of the invention

Embodiments of the present invention provide a phase shifter and a coupler and a method of fabricating the same, The gap between the metal upper electrode and the doped silicon dielectric fills the structure of the material having an electrooptic effect, which further miniaturizes the device and reduces the adverse effects of the carrier effect, thereby increasing the response speed of the device.

In order to achieve the above, the embodiment of the present invention adopts the following technical solutions: In one aspect, a phase shifter is provided, including:

a bottom silicon layer and an insulating layer covering the underlying silicon layer;

Covering a top silicon layer of the insulating layer, the top silicon layer includes two isolation trenches, the two isolation trenches being separated by a common trench wall between the two isolation trenches, the common trench wall a waveguide, and the height of the waveguide is higher than an outer groove wall of the two isolation grooves;

a first cathode metal layer and a second cathode metal layer respectively covering the two outer groove walls of the two isolation grooves;

a layer of electro-optic polymer material covering the first cathode metal layer, the second cathode metal layer and the top silicon layer;

Forming an upper electrode above the electro-optic polymer material layer above the waveguide, and forming a slit filled by the electro-optic polymer material layer between the upper layer electrode and the waveguide;

Covering the upper electrode and the second protective layer of the electro-optic polymer material layer. In another aspect, a coupler is provided, the output of the coupler being coincident with an input of the phase shifter, the coupler comprising:

Covering a top silicon layer of the insulating layer, the top silicon layer includes two isolation trenches, the two isolation trenches being separated by a common trench wall between the two isolation trenches, the common trench wall a coupler waveguide, wherein a height of the coupler waveguide is higher than an outer groove wall of the two isolation trenches, and a width of the input side of the coupler waveguide is greater than a width of the output side;

Covering the first cathode metal layer, the second cathode metal layer, and the top silicon layer Electro-optic polymer material layer;

Forming an upper electrode above the electro-optic polymer material layer above the coupler waveguide, and forming a slit filled by the electro-optic polymer material layer between the upper layer electrode and the waveguide;

Covering the upper electrode and the second protective layer of the electro-optic polymer material layer. In one aspect, a method of fabricating a phase shifter is provided, comprising:

Forming two isolation trenches separated by an intermediate common trench wall on the top silicon layer of the silicon wafer having the underlying silicon layer, the intermediate insulating layer and the top silicon layer;

Doping the intermediate common trench wall with a low concentration of N-type carriers to form a waveguide; doping the bottom of the two isolation trenches and the two outer trench walls with a high concentration of N-type carriers to form a waveguide cathode;

Forming a first cathode metal layer and a second cathode metal layer on the outer groove walls of the two isolation grooves;

Forming an electro-optic polymer material layer covering the first cathode metal layer, the second cathode metal layer, and the top silicon layer;

Making a first protective layer covering the layer of electro-optic polymer material;

Making a polarized metal electrode covering the first protective layer;

Pre-polarizing the electro-optic polymer material layer for a predetermined length of time by applying the first electric field strength to the polarized metal electrode as an anode and the first cathode metal layer and the second cathode metal layer as a cathode;

Removing the polarized metal electrode and the first protective layer;

Forming an upper layer electrode on the layer of electro-optic polymer material above the waveguide; and forming a second protective layer covering the upper layer electrode and the electro-optic polymer material layer.

In still another aspect, a method of manufacturing a coupler is provided, including:

Doping the intermediate common trench wall with a low concentration of N-type carriers to form a coupler waveguide; doping the bottom of the two isolation trenches and the two outer trench walls with a high concentration of N-type current carrying Substituting a coupler waveguide cathode;

Making a polarized metal electrode covering the first protective layer;

Removing the polarized metal electrode and the first protective layer;

Embodiments of the present invention provide a phase shifter and a coupler and a method of fabricating the same, which employ a structure in which a gap between a metal upper electrode and a doped silicon dielectric fills a material having an electrooptic effect, thereby making the device more compact and at the same time reducing The adverse effects of the carrier effect increase the response speed of the device. DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and other drawings can be obtained from those skilled in the art without any creative work.

FIG. 1 is a schematic structural diagram of an end surface of a phase shifter according to an embodiment of the present invention; FIG.

2 is a cross-sectional structural view of the phase shifter A-A of FIG. 1 according to an embodiment of the present invention;

3 is a schematic structural diagram of an end face surface of an output end of a coupler according to an embodiment of the present invention; 4 is a cross-sectional structural view of the coupler BB surface shown in FIG. 3 according to an embodiment of the present invention;

FIG. 5 is a schematic structural diagram of an end surface of a phase shifter according to another embodiment of the present invention; FIG. 6 is a schematic cross-sectional structural view of a phase shifter A-A of FIG. 5 according to an embodiment of the present invention;

FIG. 7 is a schematic structural diagram of an end surface of an output end of a coupler according to another embodiment of the present invention; FIG.

FIG. 8 is a schematic cross-sectional view showing the B-B surface of the coupler shown in FIG.

FIG. 9 is a schematic flow chart of a method for manufacturing a phase shifter according to an embodiment of the present invention; FIG.

10a to 10g are schematic diagrams showing a manufacturing process of a phase shifter according to an embodiment of the present invention;

FIG. 11 is a schematic flow chart of a method for manufacturing a coupler according to an embodiment of the present invention.

detailed description

The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

As shown in FIG. 1 and FIG. 2, an embodiment of the present invention provides a phase shifter, including: an underlying silicon layer 1a and an insulating layer 2a covering the underlying silicon layer 1a; a top silicon layer covering the insulating layer 2a, and a top silicon layer including two An isolation groove 3a, the two isolation grooves 3a are separated by a common groove wall between the two isolation grooves, the common groove wall is the waveguide 4a, and the height of the waveguide 4a is higher than the outer groove walls of the two isolation grooves 3a; a first cathode metal layer 5a and a second cathode metal layer 6a covering the two outer groove walls of the two isolation grooves; and an electro-optical polymer material layer covering the first cathode metal layer 5a, the second cathode metal layer 6a and the top silicon layer 7a; an upper electrode 8a formed above the electro-optic polymer material layer 7a above the waveguide 4a, upper layer A slit filled with the electro-optic polymer material layer 7a is formed between the electrode 8a and the waveguide 4a; and a second protective layer 9a covering the upper layer electrode 8a and the electro-optic polymer material layer 7a.

The phase shifter provided by the embodiment of the present invention adopts a structure in which a gap between a metal upper electrode and a doped silicon dielectric fills a material having an electrooptic effect, thereby making the device more compact and reducing the carrier effect. The adverse effects increase the response speed of the device.

It is to be noted that the upper electrode 8a is wider than the width of the waveguide 4a; the widths of the two isolation grooves are equal, and the thicknesses of the bottoms of the two isolation grooves are equal; the shape of the waveguide 4a is a rectangular parallelepiped.

The structure of the phase shifter provided by the embodiment of the present invention strengthens the limiting effect of the slit of the electro-optic polymer material on the light field due to the characteristics of the surface plasmon polarization mode, and controls the narrowness by changing the voltage on the upper electrode and the waveguide. The refractive index of the electro-optic polymer material in the slit further adjusts the phase of the light field, and finally achieves the purpose of phase shifting.

As shown in FIG. 3 and FIG. 4, an embodiment of the present invention provides a coupler, the output end of which is matched with the input end of the phase shifter provided in FIG. 1, and the coupler includes: a bottom silicon layer lb and An insulating layer 2b covering the underlying silicon layer lb;

Covering the top silicon layer of the insulating layer 2b, the top silicon layer comprises two isolation trenches 3b, the two isolation trenches 3b being separated by a common trench wall between the two isolation trenches 3b, the common trench walls being the coupler waveguides 4b, wherein The height of the coupler waveguide 4b is higher than the outer groove walls of the two isolation grooves 3b, and the width of the input side of the coupler waveguide 4b is larger than the width of the output side;

a first cathode metal layer 5b and a second cathode metal layer 6b covering the two outer groove walls of the two isolation grooves, respectively;

An electro-optic polymer material layer 7b covering the first cathode metal layer 5b, the second cathode metal layer 6b and the top silicon layer;

A slit formed by the electro-optic polymer material layer 7b is formed between the upper electrode 8b, the upper electrode 8b and the coupler waveguide 4b waveguide formed above the electro-optic polymer material layer 7b above the coupler waveguide 4b;

The upper protective layer 9b covering the upper electrode 8b and the electro-optic polymer material layer 7b. Further, the upper electrode 8b is wider than the widest width of the coupler waveguide 7b; two isolations The widths of the slots are equal and the thicknesses of the bottoms of the two isolation slots are equal.

Here, the coupler provided by the embodiment of the present invention is limited in shape and structure to be applied only to the redirector provided by the present invention, and the phase shifter provided by the present invention provides input light waves. Since the output of the coupler coincides with the input of the phase shifter and the layer structure is the same, the upper electrode of the coupler and the coupler waveguide can provide the same electric field strength as in the phase shifter slit, so when the light wave enters the coupler The coupler also plays a phase shifting effect on the light field. Although the length of the coupler is relatively short compared to the phase shifter, the light wave enters the design of the phase shifter through the coupler provided by the embodiment of the present invention, to a certain extent The effect of phase shifting is enhanced, that is, a good phase shifting effect can be achieved when a lower voltage change amount occurs, thereby reducing energy consumption.

Specifically, an embodiment of the present invention is shown in conjunction with FIG. 5 and FIG. 6. The preferred embodiment of the phase shifter has a width of 1.5 micrometers and a thickness of 200 nanometers; The isolation trenches are all 2 microns wide and the bottom of the isolation trenches are 50 nanometers thick. The height of the waveguide is 150 nm, the width of the waveguide is 400 nm, the length of the phase shifter is 10 μm, and the height of the slit is 20 nm.

At this time, according to the phase change formula of the phase shifter: λ 2 a can obtain the change of the phase with the voltage. In the above formula, the wavelength of the light wave introduced into the phase shifter, "is the refractive index of the electro-optic polymer material, is electro-optic polymerization. The second-order nonlinear coefficient of the material is the length of the phase shifter, which is the height of the polymer slit, Γ is the percentage of the light field energy in the slit, and S is the ratio of the phase velocity to the group velocity in the waveguide. △ is the amount of change in voltage value, ^Δ ^ phase change amount.

As shown in FIG. 7 and FIG. 8 , an embodiment of the present invention provides an example of a coupler. Preferably, the upper electrode of the coupler has a width of 1.5 μm and a thickness of 200 nm; both isolation slots have widths at the input end. 1.975 micron, 2 microns at the output, the thickness of the bottom of both isolation trenches is 50 nanometers; the height of the coupler waveguide is 150 nanometers, the width of the coupler waveguide at the input is 450 nanometers, the width at the output It is 400 nm; the coupler has a length of 500 nm and the slit has a height of 20 nm. Of course, only the preferred parameters of the phase shifter and the coupler are given here, as long as those skilled in the art can easily think of the change or replacement of the parameters within the scope of the technology disclosed in the present invention, which should be covered by the scope of the present invention. .

Here, the coupler provided by the embodiment of the present invention is limited in shape and structure to be applied only to the redirector provided by the present invention, and the phase shifter provided by the present invention provides input light waves.

As shown in FIG. 9, a method for manufacturing a phase shifter according to an embodiment of the present invention includes the following steps in conjunction with FIGS. 10a-10g:

S 101 a. Two isolation trenches separated by an intermediate common trench wall are formed by etching on the top silicon layer of the silicon wafer having the underlying silicon layer, the intermediate insulating layer, and the top silicon layer.

Here, the silicon wafer having the underlying silicon layer, the intermediate insulating layer and the top silicon layer is also referred to as an SOI (Silicon-On-Insulator) silicon wafer, wherein the intermediate insulating layer is a silicon oxide material, as shown in FIG. 10a. As shown, two isolation trenches separated by a central common trench wall are formed by an etch process.

S102a, doping a low concentration N-type carrier to the intermediate common trench wall to form a waveguide. S 103 a. Doping a high concentration of N-type carriers to the bottom of the two isolation trenches and the two outer trench walls to form a waveguide cathode.

Specifically, steps S 102 and S 103, shown in Figure 10b, the intermediate groove wall common low doping concentration N-type ^{^{carriers, 10 1 6 ~10 1 8 cm_}} 3, the waveguide is formed; two isolation trenches The bottom and the two outer groove walls are doped with a high concentration of N-type carriers, and the concentration is preferably

10 ²⁰ cm- ³ .

S104a, forming a first cathode metal layer and a second cathode metal layer on the outer groove walls of the two isolation trenches.

Here, as shown in FIG. 10c, a first cathode metal layer and a second cathode metal layer may be formed on the outer groove walls of the two isolation trenches by evaporation and lift-off methods, wherein the first cathode metal layer and the second cathode metal layer In the case of silver or gold, the first cathode metal layer and the second cathode metal layer are electrically conductive and simultaneously serve as cathode electrodes of the waveguide when energized.

S 105 a, forming an electro-optic polymer material layer covering the first cathode metal layer, the second cathode metal layer, and the top silicon layer. As shown in FIG. 10d, a layer of electro-optic polymer material is prepared by spin coating, wherein the electro-optic polymer material layer is AJLS 103 cross-linked with poly(mercapto acrylate) PMMA, and optionally, the refractive index is 1.63. The nonlinear coefficient is 100~200pm/V. The molecular formula of AJLS 103 is as shown in the following formula 1:

Formula 1

S 106a, fabricating a first protective layer overlying the layer of electro-optic polymer material.

S 107a, forming a polarized metal electrode covering the first protective layer.

As shown in Fig. 10e, a first protective layer is also formed by spin coating, the first protective layer being a silicon dioxide material; a polarized metal electrode is formed on the first protective layer by evaporation.

S 108a, pre-polarizing the electro-optic polymer material layer for a predetermined duration by applying a first electric field strength with the polarized metal electrode as an anode and the first cathode metal layer and the second cathode metal layer as a cathode.

Optionally, the first electric field intensity used in the pre-polarization process is 100 V/um, and the predetermined duration is 10 min.

S 109a, removing the polarized metal electrode and the first protective layer.

Here, the polarized metal electrode and the first protective layer may be directly peeled off. S 1 10a, forming an upper electrode on the layer of electro-optic polymer material above the waveguide.

As shown in Fig. 10f, an upper electrode is formed on the electro-optic polymer material layer by evaporation and lift-off.

S l l l a, forming a second protective layer covering the upper electrode and the electro-optic polymer material layer. As shown in Figure 10g, a direct spin-on silica material is used as a second protective layer to cover the upper electrode and electro-optic polymer material layers.

The phase shifter manufacturing method provided by the embodiment of the present invention adopts a structure in which a gap between a metal upper electrode and a doped silicon dielectric material fills a material having an electrooptic effect, thereby making the device more compact and reducing the carrier effect band. The adverse effects of the device increase the response speed of the device.

It should be noted that the phase change formula of the phase shifter is: λ 2 a where is the wavelength, "is the refractive index of the electro-optic material, the second-order nonlinear coefficient of the polymer, and z is the length of the phase shifter, which is the polymerization. The thickness of the object slit, Γ is the percentage of the light field energy in the slit, which is the ratio of the phase velocity to the group velocity in the waveguide, Δ is the voltage value change amount, ^Δ ^ phase change amount.

As shown in FIG. 10, a method for manufacturing a coupler according to an embodiment of the present invention includes the following steps:

S 101b, forming two isolation trenches separated by an intermediate common trench wall by etching on the top silicon layer of the silicon wafer having the underlying silicon layer, the intermediate insulating layer, and the top silicon layer.

Here, the silicon wafer having the underlying silicon layer, the intermediate insulating layer, and the top silicon layer is also referred to as an SOI (Silicon-On-Insulator) silicon wafer, wherein the intermediate insulating layer is a silicon oxide material.

S 102b, doping a low concentration N-type carrier to the intermediate common trench wall to form a coupler waveguide.

S 103b, doping a high concentration of N-type carriers to the bottom of the two isolation trenches and the two outer trench walls to form a coupler waveguide cathode.

Alternatively, steps S 102 and S 103 of low concentration of 10 ¹⁶ ~10 ¹⁸ cm_ ^3, a high concentration of S104b, forming a first cathode metal layer and a second cathode metal layer on the outer groove walls of the two isolation trenches.

Here, the first cathode metal layer and the second cathode metal layer may be formed on the outer groove walls of the two isolation trenches by evaporation and lift-off methods, wherein the first cathode metal layer and the second cathode metal layer are silver or gold, When energized, the first cathode metal layer and the second cathode metal layer are conductive and simultaneously serve as cathode electrodes for the coupler waveguide.

S 105b, forming an electro-optic polymer material layer covering the first cathode metal layer, the second cathode metal layer, and the top silicon layer.

Here, a layer of electro-optic polymer material is prepared by spin coating, wherein the electro-optic polymer material layer is AJLS 103 which is cross-linked with polyacrylic acid decyl acrylate PMMA, optionally, having a refractive index of 1.63, a nonlinear coefficient It is 100~200pm/V.

S 106b, forming a first protective layer overlying the layer of electro-optic polymer material.

The first protective layer can also be formed by spin coating, which is a silicon dioxide material.

S 107b, forming a polarized metal electrode covering the first protective layer.

A polarized metal electrode is formed on the first protective layer by evaporation.

S 108b, applying a first electric field strength to the electro-optic polymer material layer for a predetermined duration of pre-polarization by using a polarized metal electrode as an anode and a first cathode metal layer and a second cathode metal layer as a cathode.

S 109b, removing the polarized metal electrode and the first protective layer.

Here, the polarized metal electrode and the first protective layer may be directly peeled off.

S 1 10b, forming an upper electrode on the layer of electro-optic polymer material above the waveguide.

An upper electrode is formed on the electro-optic polymer material layer by evaporation and lift-off.

S ll lb, a second protective layer covering the upper electrode and the electro-optic polymer material layer. The direct spin-coated silica material serves as a second protective layer covering the upper electrode and the electro-optic polymer material layer. Here, the coupler provided by the embodiment of the present invention limits the shape and structure to the direction shifter provided by the present invention, and provides the input light wave for the phase shifter provided by the present invention. The phase shifter and the coupler provided by the embodiments of the present invention can also be integrally prepared, that is, the coupler provided by the present invention can be directly prepared by the present invention, because the processing process of the layers in the manufacturing process and the entire preparation steps are the same. The input of the phase shifter further enhances the precision of the device. In addition, since the output of the coupler coincides with the input of the phase shifter and the layer structure is the same, the upper electrode of the coupler and the coupler waveguide can provide the same electric field strength as in the phase shifter slit, so the light wave enters the coupler. The time coupler can also achieve the phase shifting effect on the light field. Although the length of the coupler is relatively short compared to the phase shifter, the light wave enters the design of the phase shifter through the coupler provided by the embodiment of the present invention, to a certain extent. The effect of phase shifting can be enhanced, that is, a good phase shifting effect can be achieved when a lower voltage change amount occurs, thereby reducing energy consumption.

The above is only the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the present invention. It should be covered by the scope of the present invention. Therefore, the scope of the invention should be determined by the scope of the claims.

Claims

Claim

A phase shifter, comprising:

Covering a top silicon layer of the insulating layer, the top silicon layer includes two isolation trenches, the two isolation trenches being separated by a common trench wall between the two isolation trenches, the common trench wall a waveguide, and the height of the waveguide is higher than an outer groove wall of the two isolation grooves; a first cathode metal layer and a second cathode metal layer respectively covering the two outer groove walls of the two isolation grooves;

a layer of electro-optic polymer material covering the first cathode metal layer, the second cathode metal layer, and the top silicon layer;

Covering the upper electrode and the second protective layer of the electro-optic polymer material layer.

2. The phase shifter according to claim 1, wherein the upper layer electrode is wider than the width of the waveguide.

The phase shifter according to claim 2, wherein the upper electrode has a width of 1.5 μm and a thickness of 200 nm.

4. The phase shifter according to claim 1, wherein the two isolation grooves have the same width and the bottom portions of the two isolation grooves have the same thickness.

The phase shifter according to claim 4, wherein the two isolation grooves have a width of 2 μm, and the bottom of the isolation groove has a thickness of 50 nm.

6. The phase shifter according to claim 1, wherein the shape of the waveguide is a rectangular parallelepiped.

7. The phase shifter according to claim 6, wherein the waveguide has a height of 150 nm and the waveguide has a width of 400 nm.

8. The phase shifter of claim 1 wherein said phase shifter has a length of 10 microns.

9. The phase shifter according to claim 1, wherein the slit has a height of 20 nm.

10. A coupler, wherein an output of the coupler coincides with an input of the phase shifter, the coupler comprising:

Covering a top silicon layer of the insulating layer, the top silicon layer includes two isolation trenches, the two isolation trenches being separated by a common trench wall between the two isolation trenches, the common trench wall a coupler waveguide, wherein a height of the coupler waveguide is higher than a sidewall of the two isolation trenches, and a width of the input side of the coupler waveguide is greater than a width of the output side;

Forming an upper electrode above the electro-optic polymer material layer above the coupler waveguide, and forming a slit filled by the electro-optic polymer material layer between the upper layer electrode and the coupler waveguide;

A coupler according to claim 10, wherein said upper layer electrode is wider than a widest width of said coupler waveguide.

12. The coupler according to claim 1, wherein the upper layer electrode has a width of 1.5 μm and a thickness of 200 nm.

13. The coupler according to claim 10, wherein the widths of the two isolation grooves are equal and the thicknesses of the bottoms of the two isolation grooves are equal.

The coupler according to claim 13, wherein the two isolation grooves have a width of 1.975 μm at the input end and a width of 2 μm at the output end, and the bottom of the two isolation grooves The thickness is 50 nm.

The coupler according to claim 10, wherein the waveguide has a height of 150 nm, and the waveguide has a width of 450 nm at the input end and a width of 400 nm at the output end.

16. The coupler of claim 10, said coupler having a length of 500 nanometers.

17. The coupler of claim 10, said slit having a height of 20 nanometers.

18. A method of manufacturing a phase shifter, comprising:

Making a polarized metal electrode covering the first protective layer;

Pre-polarizing the electro-optic polymer material layer for a predetermined duration by applying the first electric field strength to the polarized metal electrode as an anode and the first cathode metal layer and the second cathode metal layer as a cathode;

Removing the polarized metal electrode and the first protective layer;

Forming an upper layer electrode on the electro-optic polymer material layer above the waveguide; and forming a second protective layer covering the upper layer electrode and the electro-optic polymer material layer.

19. The method of claim 18, wherein the upper metal, the first cathode metal layer, the second cathode metal layer, and the polarized metal electrode are silver or gold.

20. The method according to claim 18, wherein the electro-optic polymer material layer is AJLS 103 cross-linked with poly(mercapto acrylate) PMMA, wherein the electro-optic polymer material has a refractive index of 1.63, the nonlinear coefficient is 100~200pm/V.

21. The method according to claim ¹⁸ , wherein the low concentration is 10 ^{16 to} 10 ¹⁸ cm - ³ and the high concentration is 10 ² ° cm ^-3 .

22. The method of claim 18 wherein said first cathode metal layer is in communication with said second cathode metal layer upon energization.

23. The method according to claim 18, wherein the insulating layer is Si0 ₂ , the first protective layer is Si0 ₂ , and the second protective layer is Si0 ₂ .

24. The method of claim 18, wherein the first electric field strength is 100 V/um and the predetermined time length is 10 min.

25. The method according to claim 18, wherein the phase change formula of the phase shifter is: λ 2 a where is a wavelength, “is the refractive index of the electro-optic material, and is a second-order non-polymer Linear coefficient, / is the length of the phase shifter, ^ / is the thickness of the polymer slit, Γ is the percentage of the light field energy in the slit, and S is the ratio of the phase velocity to the group velocity in the waveguide, which is the voltage value Change amount, phase change amount.

26. A method of fabricating a coupler, comprising:

Doping low-concentration Ν-type carriers to the intermediate common trench walls to form a coupler waveguide; doping high-concentration Ν-type carriers to the bottom and the two outer trench walls of the two isolation trenches to form a coupler Waveguide cathode

Making a polarized metal electrode covering the first protective layer;

Removing the polarized metal electrode and the first protective layer;

27. The method of claim 26 wherein the upper metal, the first cathode metal layer, the second cathode metal layer, and the polarized metal electrode are silver or gold.

The method according to claim 26, wherein the electro-optic polymer material layer is AJLS 103 cross-linked with polyacrylic acid decyl acrylate PMMA, wherein the electro-optic polymer material has a refractive index of 1.63 The nonlinear coefficient is 100~200pm/V.

29. The method according to claim 26, wherein the low concentration is 10 ^{16 to} 10 ¹⁸ cm - ³ and the high concentration is 10 ² ° cm ^-3 .

30. The method of claim 26 wherein said first cathode metal layer is in communication with said second cathode metal layer upon energization.

The method according to claim 26, wherein the insulating layer is Si0 ₂ , the first protective layer is Si0 ₂ , and the second protective layer is Si0 ₂ .

32. The method of claim 26, wherein the first electric field strength is 100 V/um and the predetermined time length is 10 min.