CN102763264B - Phase shifter, coupler and methods for their production - Google Patents
Phase shifter, coupler and methods for their production Download PDFInfo
- Publication number
- CN102763264B CN102763264B CN201280000484.9A CN201280000484A CN102763264B CN 102763264 B CN102763264 B CN 102763264B CN 201280000484 A CN201280000484 A CN 201280000484A CN 102763264 B CN102763264 B CN 102763264B
- Authority
- CN
- China
- Prior art keywords
- layer
- electro
- polymer material
- waveguide
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on electro-optical organic material
- G02F1/065—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on electro-optical organic material in an optical waveguide structure
Abstract
A phase shifter, a coupler and methods for their production are provided by the embodiments of the present invention, which relates to the field of photonics, wherein the methods can reduce optical damage, improve the utilization ratio of the light field energy, and improve the response speed of device. The phase shifter comprises: a base silicon layer and an insulated layer covering the base silicon layer; a top silicon layer covering the insulated layer, wherein the top silicon layer includes two isolation grooves, which are separated by a common groove wall with each other, wherein the common groove wall is a waveguide, and the height of the waveguide is higher than the outside groove walls of the two isolation grooves; a first cathode metal layer and a second cathode metal layer covering two outside groove walls of the two isolation grooves respectively; an electro-optic polymer material layer covering the first cathode metal layer, the second cathode metal layer and the top silicon layer; an upper electrode formed on the top of the electro-optic polymer material layer, and the slits formed between the upper electrode and the waveguide and filled by the electro-optic polymer material layer; and a second protect layer covering the upper electrode and the electro-optic polymer material layer. The embodiments of the present invention are applied to the electro-optic phase shift.
Description
Technical field
The present invention relates to integrated silicon-based photonic propulsion field, relate in particular to a kind of phase shifter and coupler and manufacture method thereof.
Background technology
Silica-based phase shifter, as the key that realizes the conversion of the signal of telecommunication-light signal, is the core devices of realizing silica-based high speed modulation, and in integrated silicon-based photonic propulsion field, tool is of great significance, and its research work has become the focus of academia and industrial quarters.For silicon materials, owing to itself lacking linear electro-optic effect, conventionally adopt modulation that charge carrier effect of dispersion realizes refractive index to reach the object of phase shift.On the whole, in silicon-based devices, the change of refractive index mainly depends on the variation of free carrier concentration, it mainly deposits problem both ways: first, ordinary silicon based waveguides is limited to the restriction of light field, modulation efficiency is not high, conventionally needs tens microns to a few other waveguides of mm length level, to carry out phase shift, has greatly limited the High Density Integration of silicon-based devices.Second, free carrier dispersion (the FCD that follows carrier concentration to change and produce, free charge carriers dispersion) and free-carrier Absorption (FCA, free charge carriers absorption) effect can cause delay to the response time of electric light conversion, has greatly limited the lifting of silica-based phase shifter speed.
In recent years, along with going deep into of effects on surface plasma effect research, some phase shifter design schemes based on surface plasma wave guide structure have been there are.Yet the service behaviour of these novel surface plasma phase shift modulation devices is also unsatisfactory, main cause can ascribe the following aspects to: first, there is defect in waveguiding structure design, processing technology requires high, and the loss being brought by plasma effect is larger, unstable properties.The second, seriously rely on silica-based carrier effect, modulation signal postpones large, and distortion is serious.
Summary of the invention
Embodiments of the invention provide a kind of phase shifter and coupler and manufacture method thereof, the gap filling of employing between electrode of metal and doped silicon dielectric have the structure of the material of electro optic effect, makes device miniaturization more, reduced the response speed that adverse effect that carrier effect brings has improved device simultaneously.
For achieving the above object, embodiments of the invention adopt following technical scheme:
On the one hand, provide a kind of phase shifter, comprising:
The insulating barrier of bottom silicon layer and the described bottom silicon layer of covering;
Cover the top silicon layer of described insulating barrier, described top silicon layer comprises two isolation channels, the public cell wall that described two isolation channels are positioned between described two isolation channels separates, and described public cell wall is waveguide, and the height of described waveguide is higher than the outside cell wall of described two isolation channels;
Cover respectively the first cathodic metal layer and the second cathodic metal layer of two outside cell walls of described two isolation channels;
Cover the electro-optic polymer material layer of the first cathodic metal layer, described the second cathodic metal layer and described top silicon layer;
The upper electrode that is formed on the described electro-optic polymer material layer top of described waveguide top, is formed with the slit of being filled by described electro-optic polymer material layer between described upper electrode and described waveguide;
Cover the second protective layer of described upper electrode and described electro-optic polymer material layer.
On the other hand, provide a kind of coupler, the output of described coupler and the input of described phase shifter match, and described coupler comprises:
The insulating barrier of bottom silicon layer and the described bottom silicon layer of covering;
Cover the top silicon layer of described insulating barrier, described top silicon layer comprises two isolation channels, the public cell wall that described two isolation channels are positioned between described two isolation channels separates, described public cell wall is coupler waveguide, the height of wherein said coupler waveguide is higher than the outside cell wall of described two isolation channels, and the width of described coupler waveguide input side is greater than the width of outlet side;
Cover respectively the first cathodic metal layer and the second cathodic metal layer of two outside cell walls of described two isolation channels;
Cover the electro-optic polymer material layer of the first cathodic metal layer, described the second cathodic metal layer and described top silicon layer;
The upper electrode that is formed on the described electro-optic polymer material layer top of described coupler waveguide top, is formed with the slit of being filled by described electro-optic polymer material layer between described upper electrode and described waveguide;
Cover the second protective layer of described upper electrode and described electro-optic polymer material layer.
On the one hand, provide a kind of manufacture method of phase shifter, comprising:
In the top silicon layer of silicon chip with bottom silicon layer, intermediate insulating layer and top silicon layer, by etching, form two isolation channels that separated by middle public cell wall;
To the public cell wall doping in described centre low concentration N-type charge carrier, form waveguide;
To the bottom of described two isolation channels and two outside cell wall doped with high concentration N-type charge carriers, form waveguide negative electrode;
On the cell wall of the outside of described two isolation channels, make the first cathodic metal layer and the second cathodic metal layer;
Make the electro-optic polymer material layer that covers described the first cathodic metal layer, described the second cathodic metal layer, described top silicon layer;
Make the first protective layer covering on described electro-optic polymer material layer;
Make the polarization metal electrode that covers described the first protective layer;
Using described polarization metal electrode as anode, using described the first cathodic metal layer and the second cathodic metal layer and as negative electrode, apply the first electric field strength and described electro-optic polymer material layer is carried out to the pre-polarization of scheduled duration;
Remove described polarization metal electrode and described the first protective layer;
On the described electro-optic polymer material layer above described waveguide, form upper electrode;
Make the second protective layer that covers described upper electrode and described electro-optic polymer material layer.
Another aspect, provides a kind of manufacture method of coupler, comprising:
In the top silicon layer of silicon chip with bottom silicon layer, intermediate insulating layer and top silicon layer, by etching, form two isolation channels that separated by middle public cell wall;
To the public cell wall doping in described centre low concentration N-type charge carrier, form coupler waveguide;
To the bottom of described two isolation channels and two outside cell wall doped with high concentration N-type charge carriers, form coupler waveguide negative electrode;
On the cell wall of the outside of described two isolation channels, make the first cathodic metal layer and the second cathodic metal layer;
Make the electro-optic polymer material layer that covers described the first cathodic metal layer, described the second cathodic metal layer, described top silicon layer;
Make the first protective layer covering on described electro-optic polymer material layer;
Make the polarization metal electrode that covers described the first protective layer;
Using described polarization metal electrode as anode, using described the first cathodic metal layer and the second cathodic metal layer and as negative electrode, apply the first electric field strength and described electro-optic polymer material layer is carried out to the pre-polarization of scheduled duration;
Remove described polarization metal electrode and described the first protective layer;
On the described electro-optic polymer material layer above described waveguide, form upper electrode;
Make the second protective layer that covers described upper electrode and described electro-optic polymer material layer.
Embodiments of the invention provide a kind of phase shifter and coupler and manufacture method thereof, the gap filling of employing between electrode of metal and doped silicon dielectric have the structure of the material of electro optic effect, makes device miniaturization more, reduced the response speed that adverse effect that carrier effect brings has improved device simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The phase shifter end face structure schematic diagram that Fig. 1 provides for the embodiment of the present invention;
The cross-sectional view of the phase shifter A-A face shown in Fig. 1 that Fig. 2 provides for the embodiment of the present invention;
The coupler output end face face structural representation that Fig. 3 provides for the embodiment of the present invention;
The cross-sectional view of the coupler B-B face shown in Fig. 3 that Fig. 4 provides for the embodiment of the present invention;
The phase shifter end face structure schematic diagram that Fig. 5 provides for another embodiment of the present invention;
The cross-sectional view of the phase shifter A-A face shown in Fig. 5 that Fig. 6 provides for the embodiment of the present invention;
The coupler output end face structure schematic diagram that Fig. 7 provides for another embodiment of the present invention;
The cross-sectional view of the coupler B-B face shown in Fig. 7 that Fig. 8 provides for the embodiment of the present invention;
The manufacture method schematic flow sheet of a kind of phase shifter that Fig. 9 provides for the embodiment of the present invention;
The manufacture process schematic diagram of a kind of phase shifter that Figure 10 a～10g provides for the embodiment of the present invention;
The manufacture method schematic flow sheet of a kind of coupler that Figure 11 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Shown in Fig. 1,2, the embodiment of the present invention provides a kind of phase shifter, comprising:
The insulating barrier 2a of bottom silicon layer 1a and covering bottom silicon layer 1a; The top silicon layer that covers insulating barrier 2a, top silicon layer comprises two isolation channel 3a, and the public cell wall that two isolation channel 3a are positioned between two isolation channels separates, and public cell wall is waveguide 4a, and the height of waveguide 4a is higher than the outside cell wall of two isolation channel 3a; Cover respectively the first cathodic metal layer 5a and the second cathodic metal layer 6a of two outside cell walls of two isolation channels; Cover the electro-optic polymer material layer 7a of the first cathodic metal layer 5a, the second cathodic metal layer 6a and top silicon layer; The upper electrode 8a that is formed on the electro-optic polymer material layer 7a top of waveguide 4a top, is formed with the slit of being filled by electro-optic polymer material layer 7a between upper electrode 8a and waveguide 4a; Cover the second protective layer 9a of upper electrode 8a and electro-optic polymer material layer 7a.
The kind phase shifter that embodiments of the invention provide, the gap filling of employing between electrode of metal and doped silicon dielectric have the structure of the material of electro optic effect, makes device miniaturization more, reduced the response speed that adverse effect that carrier effect brings has improved device simultaneously.
It should be noted that, upper electrode 8a is wider than the width of waveguide 4a; The width of two isolation channels equates, the thickness of the bottom of two isolation channels equates; Waveguide 4a is shaped as cuboid.
In the structure of the phase shifter that the embodiment of the present invention provides due to the characteristic of surface plasma polarization mode, strengthened the restriction of electro-optic polymer material slit to light field, by controlling the refractive index of electro-optic polymer material in slit and then realize the adjusting to light field phase place by the voltage changing in upper electrode and waveguide, finally reach the object of phase shift.
Shown in Fig. 3,4, the embodiment of the present invention provides a kind of coupler, and the input of the phase shifter that the output of this coupler and Fig. 1,2 provide matches, and this coupler comprises:
The insulating barrier 2b of bottom silicon layer 1b and covering bottom silicon layer 1b;
Cover the top silicon layer of insulating barrier 2b, top silicon layer comprises two isolation channel 3b, the public cell wall that two isolation channel 3b are positioned between two isolation channel 3b separates, public cell wall is coupler waveguide 4b, wherein the height of coupler waveguide 4b is higher than the outside cell wall of two isolation channel 3b, and the width of coupler waveguide 4b input side is greater than the width of outlet side;
Cover respectively the first cathodic metal layer 5b and the second cathodic metal layer 6b of two outside cell walls of two isolation channels;
Cover the electro-optic polymer material layer 7b of the first cathodic metal layer 5b, the second cathodic metal layer 6b and top silicon layer;
The upper electrode 8b that is formed on the electro-optic polymer material layer 7b top of coupler waveguide 4b top, is formed with the slit of being filled by electro-optic polymer material layer 7b between upper electrode 8b and coupler waveguide 4b waveguide;
Cover the second protective layer 9b of upper electrode 8b and electro-optic polymer material layer 7b.
In addition, upper electrode 8b is wider than the most wide degree of coupler waveguide 7b; The width of two isolation channels equates, the thickness of the bottom of two isolation channels equates.
Here, the coupler that the embodiment of the present invention provides from shape and ceiling structure system can only fit applications in the device of shifting to provided by the present invention, for phase shifter provided by the invention provides input light wave.Because the input of coupler output and phase shifter matches, and layer structure is identical, the upper electrode of coupler and coupler waveguide can provide and electric field strength identical in phase shifter slit, therefore when light wave enters coupler, coupler has also played the phase shift effect to light field, although the relative phase shifter of the length of coupler is shorter, but the coupler that light wave provides by the embodiment of the present invention enters the design of phase shifter, can strengthen the effect of phase shift to a certain extent, can when occurring, lower voltage change amount just can reach good Phasing, thereby reduced energy consumption.
Concrete, in conjunction with the embodiment of the present invention shown in Fig. 5,6, provide a kind of example of phase shifter, wherein, preferably the width of the upper electrode of this phase shifter is that 1.5 microns, thickness are 200 nanometers; The width of two isolation channels is 2 microns, and the thickness of isolation channel bottom is 50 nanometers.The height of waveguide is 150 nanometers, and the width of waveguide is 400 nanometers; The length of phase shifter is 10 microns; The height of slit is 20 nanometers.
At this moment according to the phase change formula of phase shifter:
Can obtain phase place with the change amount of voltage, in above-mentioned formula, λ is for importing the optical wavelength of phase shifter, the refractive index that n is electro-optic polymer material, γ
33for the second order nonlinear coefficient of electro-optic polymer material, the length that l is phase shifter, d is the height of polymer slit, and Γ is the shared percentage of the Light Energy in slit, and S is the ratio of phase velocity and group velocity in waveguide, and Δ γ is magnitude of voltage change amount,
phase change amount.
Described in Fig. 7,8, the embodiment of the present invention provides a kind of example of coupler, and preferably this coupler upper electrode width is that 1.5 microns, thickness are 200 nanometers; Two isolation channels are 1.975 microns at input width, at output width, are 2 microns, and the thickness of two isolation channel bottoms is 50 nanometers; The height of coupler waveguide is 150 nanometers, and coupler waveguide is 450 nanometers at input width, at output width, is 400 nanometers; Coupler length be 500 nanometers, the height of slit is 20 nanometers.
The preferred parameter of just phase shifter certainly given here and coupler, as long as in the technical scope that those skilled in the art disclose in the present invention, can expect easily variation or the replacement of parameter, within all should being encompassed in protection scope of the present invention.
Here, the coupler that the embodiment of the present invention provides from shape and ceiling structure system can only fit applications in the device of shifting to provided by the present invention, for phase shifter provided by the invention provides input light wave.
The manufacture method that is illustrated in figure 9 the phase shifter that the embodiment of the present invention provides, comprises the following steps in conjunction with Figure 10 a～10g:
S101a, in the top silicon layer of silicon chip with bottom silicon layer, intermediate insulating layer and top silicon layer, by etching, form two isolation channels that separated by middle public cell wall.
Here, there is the silicon chip of bottom silicon layer, intermediate insulating layer and top silicon layer also referred to as SOI (Silicon-On-Insulator, silicon in dielectric substrate) silicon chip, wherein intermediate insulating layer is silica material, as shown in Figure 10 a, by etching technics, form two isolation channels that separated by middle public cell wall.
S102a, to the public cell wall in centre doping low concentration N-type charge carrier, form waveguide.
S103a, to the bottom of two isolation channels and two outside cell wall doped with high concentration N-type charge carriers, form waveguide negative electrode.
Concrete, step S102 and S103, as shown in Figure 10 b, to the public cell wall doping in centre low concentration N-type charge carrier, 10
16～10
18cm
-3, form waveguide; To the bottom of two isolation channels and two outside cell wall doped with high concentration N-type charge carriers, this concentration preferably 10
20cm
-3.
S104a, on the cell wall of the outside of two isolation channels, make the first cathodic metal layer and the second cathodic metal layer.
Here, as shown in Figure 10 c, can adopt evaporation and stripping method on the cell wall of the outside of two isolation channels, to make the first cathodic metal layer and the second cathodic metal layer, wherein the first cathodic metal layer and the second cathodic metal layer are silver or golden, and the also while that the first cathodic metal layer and the second cathodic metal layer are conducting when energising is as the cathode electrode of waveguide.
S105a, making cover the electro-optic polymer material layer of the first cathodic metal layer, the second cathodic metal layer, top silicon layer.
As shown in Figure 10 d, here adopt the mode of spin coating to make electro-optic polymer material layer, wherein electro-optic polymer material layer is for there is crosslinked AJLS103 with polymetylmethacrylate, optional, its refractive index is 1.63, and non linear coefficient is 100～200pm/V.Wherein the molecular formula of AJLS103 is as shown in following formula 1:
S106a, making cover the first protective layer on described electro-optic polymer material layer.
S107a, making cover the polarization metal electrode of the first protective layer.
As shown in Figure 10 e, adopt equally the mode of spin coating to make the first protective layer, this first protective layer is earth silicon material; Adopt the method for evaporation on the first protective layer, to make polarization metal electrode.
S108a, using polarize metal electrode as anode, using the first cathodic metal layer and the second cathodic metal layer and as negative electrode, apply the first electric field strength and electro-optic polymer material layer is carried out to the pre-polarization of scheduled duration.
Optionally, the first electric field strength that the pre-polarization process here adopts is 100V/um, and scheduled duration is 10min.
S109a, removal polarization metal electrode and the first protective layer.
Here directly polarization metal electrode and the first protective layer are peeled off.
S110a, on the electro-optic polymer material layer above waveguide, form upper electrode.
As shown in Figure 10 f, by evaporation and stripping method, on electro-optic polymer material layer, form upper electrode.
S111a, making cover the second protective layer of upper electrode and electro-optic polymer material layer.
As shown in Figure 10 g, directly spin coating earth silicon material covers upper electrode and electro-optic polymer material layer as the second protective layer.
The phase shifter manufacture method that embodiments of the invention provide, the gap filling of employing between electrode of metal and doped silicon dielectric have the structure of the material of electro optic effect, makes device miniaturization more, reduced the response speed that adverse effect that carrier effect brings has improved device simultaneously.
It should be noted that, the phase change formula of phase shifter is:
Wherein, λ is wavelength, the refractive index that n is electrooptical material, γ
33for the second order nonlinear coefficient of polymer, the length that l is phase shifter, d is the thickness of polymer slit, and Γ is the shared percentage of the Light Energy in slit, and S is the ratio of phase velocity and group velocity in waveguide, and Δ V is magnitude of voltage change amount,
phase change amount.
As shown in figure 10, the manufacture method of the coupler providing for the embodiment of the present invention, comprises the following steps:
S101b, in the top silicon layer of silicon chip with bottom silicon layer, intermediate insulating layer and top silicon layer, by etching, form two isolation channels that separated by middle public cell wall.
Here, have the silicon chip of bottom silicon layer, intermediate insulating layer and top silicon layer also referred to as SOI (Silicon-On-Insulator, the silicon in dielectric substrate) silicon chip, wherein intermediate insulating layer is silica material.
S102b, to the public cell wall in centre doping low concentration N-type charge carrier, form coupler waveguide.
S103b, to the bottom of two isolation channels and two outside cell wall doped with high concentration N-type charge carriers, form coupler waveguide negative electrode.
Optionally, in step S102 and S103, low concentration is 10
16～10
18cm
-3, high concentration is 10
20cm
-3.
S104b, on the cell wall of the outside of two isolation channels, make the first cathodic metal layer and the second cathodic metal layer.
Here, can adopt evaporation and stripping method on the cell wall of the outside of two isolation channels, to make the first cathodic metal layer and the second cathodic metal layer, wherein the first cathodic metal layer and the second cathodic metal layer are silver or golden, and the also while that the first cathodic metal layer and the second cathodic metal layer are conducting when energising is as the cathode electrode of coupler waveguide.
S105b, making cover the electro-optic polymer material layer of the first cathodic metal layer, the second cathodic metal layer, top silicon layer.
Here adopt the mode of spin coating to make electro-optic polymer material layer, for there is crosslinked AJLS103 with polymetylmethacrylate in electro-optic polymer material layer wherein, and optional, its refractive index is 1.63, and non linear coefficient is 100～200pm/V.
S106b, making cover the first protective layer on electro-optic polymer material layer.
Can adopt equally the mode of spin coating to make the first protective layer, this first protective layer is earth silicon material.
S107b, making cover the polarization metal electrode of the first protective layer.
Adopt the method for evaporation on the first protective layer, to make polarization metal electrode.
S108b, using polarize metal electrode as anode, using the first cathodic metal layer and the second cathodic metal layer and as negative electrode, apply the first electric field strength and electro-optic polymer material layer is carried out to the pre-polarization of scheduled duration.
Optionally, the first electric field strength that the pre-polarization process here adopts is 100V/um, and scheduled duration is 10min.
S109b, removal polarization metal electrode and the first protective layer.
Here directly polarization metal electrode and the first protective layer are peeled off.
S110b, on the electro-optic polymer material layer above waveguide, form upper electrode.
By evaporation and stripping method, on electro-optic polymer material layer, form upper electrode.
S111b, making cover the second protective layer of upper electrode and electro-optic polymer material layer.
Directly spin coating earth silicon material covers upper electrode and electro-optic polymer material layer as the second protective layer.
Here, the coupler that the embodiment of the present invention provides from shape and ceiling structure system can only fit applications in the device of shifting to provided by the present invention, for phase shifter provided by the invention provides input light wave.And because the treatment process of each layer in manufacture craft and whole preparation process is identical so the embodiment of the present invention provides phase shifter and coupler also can one preparations, directly coupler provided by the invention is prepared to the input at phase shifter provided by the invention, thus the accuracy of further enhance device.In addition the input due to coupler output and phase shifter matches, and layer structure is identical, the upper electrode of coupler and coupler waveguide can provide and electric field strength identical in phase shifter slit, therefore when light wave enters coupler, coupler also can arrive the phase shift effect to light field, although the relative phase shifter of the length of coupler is shorter, but the coupler that light wave provides by the embodiment of the present invention enters the design of phase shifter, can strengthen the effect of phase shift to a certain extent, can when occurring, lower voltage change amount just can reach good Phasing, thereby reduced energy consumption.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by the described protection range with claim.
Claims (32)
1. a phase shifter, is characterized in that, comprising:
The insulating barrier of bottom silicon layer and the described bottom silicon layer of covering;
Cover the top silicon layer of described insulating barrier, described top silicon layer comprises two isolation channels, the public cell wall that described two isolation channels are positioned between described two isolation channels separates, and described public cell wall is waveguide, and the height of described waveguide is higher than the outside cell wall of described two isolation channels;
Cover respectively the first cathodic metal layer and the second cathodic metal layer of two outside cell walls of described two isolation channels;
Cover the electro-optic polymer material layer of the first cathodic metal layer, described the second cathodic metal layer and described top silicon layer;
The upper electrode that is formed on the described electro-optic polymer material layer top of described waveguide top, is formed with the slit of being filled by described electro-optic polymer material layer between described upper electrode and described waveguide;
Cover the second protective layer of described upper electrode and described electro-optic polymer material layer.
2. phase shifter according to claim 1, is characterized in that, described upper electrode is wider than the width of described waveguide.
3. phase shifter according to claim 2, is characterized in that, the width of described upper electrode is that 1.5 microns, thickness are 200 nanometers.
4. phase shifter according to claim 1, is characterized in that, the width of described two isolation channels equates and the thickness of the bottom of described two isolation channels equates.
5. phase shifter according to claim 4, is characterized in that, the width of described two isolation channels is 2 microns, and the thickness of described isolation channel bottom is 50 nanometers.
6. phase shifter according to claim 1, is characterized in that, described waveguide be shaped as cuboid.
7. phase shifter according to claim 6, is characterized in that, the height of described waveguide is 150 nanometers, and the width of described waveguide is 400 nanometers.
8. phase shifter according to claim 1, described phase shifter length be 10 microns.
9. phase shifter according to claim 1, the height of described slit is 20 nanometers.
10. a coupler, is characterized in that, the output of described coupler and the input of phase shifter match, and described coupler comprises:
The insulating barrier of bottom silicon layer and the described bottom silicon layer of covering;
Cover the top silicon layer of described insulating barrier, described top silicon layer comprises two isolation channels, the public cell wall that described two isolation channels are positioned between described two isolation channels separates, described public cell wall is coupler waveguide, the height of wherein said coupler waveguide is higher than the outside cell wall of described two isolation channels, and the width of described coupler waveguide input side is greater than the width of outlet side;
Cover respectively the first cathodic metal layer and the second cathodic metal layer of two outside cell walls of described two isolation channels;
Cover the electro-optic polymer material layer of the first cathodic metal layer, described the second cathodic metal layer and described top silicon layer;
The upper electrode that is formed on the described electro-optic polymer material layer top of described coupler waveguide top, is formed with the slit of being filled by described electro-optic polymer material layer between described upper electrode and described coupler waveguide;
Cover the second protective layer of described upper electrode and described electro-optic polymer material layer.
11. couplers according to claim 10, is characterized in that, described upper electrode is wider than the most wide degree of described coupler waveguide.
12. couplers according to claim 11, is characterized in that, described upper electrode width is that 1.5 microns, thickness are 200 nanometers.
13. couplers according to claim 10, is characterized in that, at the width of described two isolation channels, equate and the thickness of the bottom of described two isolation channels equates.
14. couplers according to claim 13, is characterized in that, described two isolation channels are 1.975 microns at input width, at output width, are 2 microns, and the thickness of described two isolation channels bottom is 50 nanometers.
15. couplers according to claim 10, is characterized in that, the height of described waveguide is 150 nanometers, and described waveguide is 450 nanometers at input width, at output width, is 400 nanometers.
16. couplers according to claim 10, described coupler length be 500 nanometers.
17. couplers according to claim 10, the height of described slit is 20 nanometers.
The manufacture method of 18. 1 kinds of phase shifters, is characterized in that, comprising:
In the top silicon layer of silicon chip with bottom silicon layer, intermediate insulating layer and top silicon layer, by etching, form two isolation channels that separated by middle public cell wall;
To the public cell wall doping in described centre low concentration N-type charge carrier, form waveguide;
To the bottom of described two isolation channels and two outside cell wall doped with high concentration N-type charge carriers, form waveguide negative electrode;
On the cell wall of the outside of described two isolation channels, make the first cathodic metal layer and the second cathodic metal layer;
Make the electro-optic polymer material layer that covers described the first cathodic metal layer, described the second cathodic metal layer, described top silicon layer;
Make the first protective layer covering on described electro-optic polymer material layer;
Make the polarization metal electrode that covers described the first protective layer;
Using described polarization metal electrode as anode, using described the first cathodic metal layer and the second cathodic metal layer and as negative electrode, apply the first electric field strength and described electro-optic polymer material layer is carried out to the pre-polarization of scheduled duration;
Remove described polarization metal electrode and described the first protective layer;
On the described electro-optic polymer material layer above described waveguide, form upper electrode;
Make the second protective layer that covers described upper electrode and described electro-optic polymer material layer.
19. methods according to claim 18, is characterized in that, upper strata metal, the first cathodic metal layer, the second cathodic metal layer and polarization metal electrode are silver, golden.
20. methods according to claim 18, it is characterized in that, for there is crosslinked AJLS103 with polymetylmethacrylate in described electro-optic polymer material layer, the refractive index of wherein said electro-optic polymer material is 1.63, and non linear coefficient is 100～200pm/V.
21. methods according to claim 18, is characterized in that, described low concentration is 10
16～10
18cm
-3, described high concentration is 10
20cm
-3.
22. methods according to claim 18, is characterized in that, during energising described in the first cathodic metal layer be communicated with described the second cathodic metal layer.
23. methods according to claim 18, is characterized in that, described insulating barrier is SiO
2, described the first protective layer is SiO
2, described the second protective layer is SiO
2.
24. methods according to claim 18, is characterized in that, described the first electric field strength is 100V/ μ m, and described scheduled duration is 10min.
25. methods according to claim 18, is characterized in that, the phase change formula of described phase shifter is:
Wherein, λ is wavelength, the refractive index that n is electrooptical material, γ
33for the second order nonlinear coefficient of polymer, the length that l is phase shifter, d is the thickness of polymer slit, and Γ is the shared percentage of the Light Energy in slit, and S is the ratio of phase velocity and group velocity in waveguide, and △ V is magnitude of voltage change amount,
phase change amount.
The manufacture method of 26. 1 kinds of couplers, is characterized in that, comprising:
In the top silicon layer of silicon chip with bottom silicon layer, intermediate insulating layer and top silicon layer, by etching, form two isolation channels that separated by middle public cell wall;
To the public cell wall doping in described centre low concentration N-type charge carrier, form coupler waveguide;
To the bottom of described two isolation channels and two outside cell wall doped with high concentration N-type charge carriers, form coupler waveguide negative electrode;
On the cell wall of the outside of described two isolation channels, make the first cathodic metal layer and the second cathodic metal layer;
Make the electro-optic polymer material layer that covers described the first cathodic metal layer, described the second cathodic metal layer, described top silicon layer;
Make the first protective layer covering on described electro-optic polymer material layer;
Make the polarization metal electrode that covers described the first protective layer;
Using described polarization metal electrode as anode, using described the first cathodic metal layer and the second cathodic metal layer and as negative electrode, apply the first electric field strength and described electro-optic polymer material layer is carried out to the pre-polarization of scheduled duration;
Remove described polarization metal electrode and described the first protective layer;
On the described electro-optic polymer material layer above described waveguide, form upper electrode;
Make the second protective layer that covers described upper electrode and described electro-optic polymer material layer.
27. methods according to claim 26, is characterized in that, upper strata metal, the first cathodic metal layer, the second cathodic metal layer and polarization metal electrode are silver, golden.
28. methods according to claim 26, it is characterized in that, for there is crosslinked AJLS103 with polymetylmethacrylate in described electro-optic polymer material layer, the refractive index of wherein said electro-optic polymer material is 1.63, and non linear coefficient is 100～200pm/V.
29. methods according to claim 26, is characterized in that, described low concentration is 10
16～10
18cm
-3, described high concentration is 10
20cm
-3.
30. methods according to claim 26, is characterized in that, during energising described in the first cathodic metal layer be communicated with described the second cathodic metal layer.
31. methods according to claim 26, is characterized in that, described insulating barrier is SiO
2, the first protective layer is SiO
2, described the second protective layer is SiO
2.
32. methods according to claim 26, is characterized in that, described the first electric field strength is 100V/ μ m, and described scheduled duration is 10min.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2012/072298 WO2012103823A2 (en) | 2012-03-14 | 2012-03-14 | Phase shifter, coupler and methods for their production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102763264A CN102763264A (en) | 2012-10-31 |
| CN102763264B true CN102763264B (en) | 2014-04-30 |
Family
ID=46603126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280000484.9A Expired - Fee Related CN102763264B (en) | 2012-03-14 | 2012-03-14 | Phase shifter, coupler and methods for their production |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102763264B (en) |
| WO (1) | WO2012103823A2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8923660B2 (en) * | 2013-05-24 | 2014-12-30 | Futurewei Technologies, Inc. | System and method for an optical phase shifter |
| EP2884331A1 (en) * | 2013-12-10 | 2015-06-17 | Institute of Solid State Physics, University of Latvia | Electro-optic modulator and method of fabricating same |
| CN103698847B (en) * | 2013-12-27 | 2016-01-20 | 南京邮电大学 | A kind of matching strengthens the method for long chain molecule type polymer optical wave guide birefringence |
| CN109581696A (en) * | 2017-09-28 | 2019-04-05 | 北京万集科技股份有限公司 | A kind of waveguide phase shifter and preparation method thereof |
| CN111458909B (en) * | 2020-04-22 | 2023-12-26 | 中国计量大学 | Electro-optic modulator of silicon-based composite waveguide based on plasma structure and organic material |
| CN115053172A (en) * | 2020-11-02 | 2022-09-13 | 深圳市速腾聚创科技有限公司 | Phase shifter, optical phased array and preparation method of optical phased array |
| CN112666726B (en) * | 2020-12-23 | 2024-02-06 | 联合微电子中心有限责任公司 | Thermo-optic phase shifter and preparation method thereof |
| CN116953960A (en) * | 2022-04-16 | 2023-10-27 | 华为技术有限公司 | Phase shifter, electro-optical device, optical communication system, and method for manufacturing phase shifter |
| WO2023221146A1 (en) * | 2022-05-20 | 2023-11-23 | 北京小米移动软件有限公司 | Phase shift unit, antenna module, and mobile terminal |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448479A (en) * | 1981-11-16 | 1984-05-15 | Bell Telephone Laboratories, Incorporated | Traveling wave, electrooptic devices with effective velocity matching |
| JPH0954291A (en) * | 1995-08-11 | 1997-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Optical phase shifter and optical switch using the same |
| US7079714B2 (en) * | 2002-11-27 | 2006-07-18 | Lucent Technologies Inc. | Electro-optic devices having flattened frequency response with reduced drive voltage |
| WO2005060043A2 (en) * | 2003-12-11 | 2005-06-30 | University Of Washington Techtransfer Invention Licensing | Phase shifters, such as for a multiple antenna wireless communication system |
| CN100472279C (en) * | 2004-08-16 | 2009-03-25 | 卢森特技术有限公司 | High-speed semiconductor waveguide phase-shifter |
-
2012
- 2012-03-14 WO PCT/CN2012/072298 patent/WO2012103823A2/en active Application Filing
- 2012-03-14 CN CN201280000484.9A patent/CN102763264B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012103823A2 (en) | 2012-08-09 |
| CN102763264A (en) | 2012-10-31 |
| WO2012103823A3 (en) | 2013-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102763264B (en) | Phase shifter, coupler and methods for their production | |
| US7747122B2 (en) | Method and apparatus for high speed silicon optical modulation using PN diode | |
| CN102087425B (en) | Waveguide capacitor for electrooptical modulator | |
| US11150494B2 (en) | Waveguide modulator structures | |
| US10401656B2 (en) | Optoelectronic device | |
| WO2016139484A1 (en) | Waveguide modulator structures | |
| CN110325900B (en) | Waveguide optoelectronic device | |
| CN1342272A (en) | Piezoelectric optical switch device | |
| CN109116590B (en) | Silicon and lithium niobate hybrid integrated optical modulator and preparation method thereof | |
| CN109564362B (en) | Optoelectronic device | |
| EP3255480B1 (en) | Optical modulator and method of manufacturing same | |
| US10969547B2 (en) | Optoelectronic device and method of manufacturing thereof | |
| WO2013155378A1 (en) | Hybrid optical modulator | |
| TW200533966A (en) | Method and apparatus for modulating an optical beam in an optical device with a photonic crystal lattice | |
| GB2564267A (en) | Optoelectronic device | |
| CN103605216B (en) | Based on the arrayed optical switch of photon crystal wave-guide | |
| US20030108319A1 (en) | Three-dimensional tapered optical waveguides and methods of manufacture thereof | |
| CN112363331B (en) | Silicon-based lithium niobate mixed electro-optical modulator | |
| CN106291990A (en) | Silica-based note oxygen capacitor type electrooptic modulator | |
| CN116165813A (en) | Optical modulator and method of forming the same | |
| CN100472279C (en) | High-speed semiconductor waveguide phase-shifter | |
| US20180321444A1 (en) | Construction of integrated mode transformers | |
| US10895764B1 (en) | Dielectric electro-optic phase shifter | |
| CN108051972B (en) | Silicon photon modulator with wavelength irrelevant high extinction ratio | |
| CN112859388A (en) | Enhanced graphene electroabsorption modulator based on D-type optical fiber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140430 Termination date: 20150314 |
|
| EXPY | Termination of patent right or utility model |