CN112859388A - Enhanced graphene electroabsorption modulator based on D-type optical fiber - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 160
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 160
- 239000013307 optical fiber Substances 0.000 title claims abstract description 89
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 42
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 42
- 238000005253 cladding Methods 0.000 claims abstract description 33
- 239000000835 fiber Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 239000010453 quartz Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000005498 polishing Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229920006335 epoxy glue Polymers 0.000 claims abstract description 10
- 230000003993 interaction Effects 0.000 claims abstract description 10
- 239000003990 capacitor Substances 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 230000008859 change Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 108
- 238000000034 method Methods 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 238000012546 transfer Methods 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 10
- 239000011889 copper foil Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000007667 floating Methods 0.000 claims description 3
- 230000010287 polarization Effects 0.000 claims description 3
- 230000004323 axial length Effects 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000001237 Raman spectrum Methods 0.000 claims 1
- 238000009501 film coating Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
- G02F1/0115—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass in optical fibres
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Abstract
Enhanced graphene electroabsorption modulator based on D-type optical fiber belongs to the field of photoelectronic devices, and is characterized in that a quartz V-shaped groove is used for embedding optical fiber therein, and epoxy glue is used for sealing and fixing the optical fiber and exposing partial optical fiber cladding outside the V-shaped groove. Polishing removes a portion of the fiber cladding to leak evanescent fields within the core. And transferring two layers of graphene on the surface of the manufactured D-type optical fiber/quartz substrate, and separating the two layers of graphene by using a dielectric layer to manufacture the parallel plate capacitor. The two metal electrodes are respectively connected with the upper layer of graphene and the lower layer of graphene and used for applying voltage to change the Fermi level of the graphene, so that the modulation of a transmission optical field in the optical fiber through the applied voltage is realized; a layer of PMMA film is added at the top of the optical fiber to lead out an evanescent field in the optical fiber, so that the interaction strength with graphene is enhanced. The modulator has high interaction strength and low manufacturing cost, and simultaneously retains the excellent characteristics of optical fiber interconnection.
Description
The technical field is as follows:
the invention belongs to the field of optoelectronic devices, and particularly relates to a design and manufacturing method of an enhanced graphene electroabsorption modulator based on a D-type optical fiber.
Background art:
an optical modulator is an optoelectronic device for manipulating the characteristics (intensity, phase, polarization, wavelength, etc.) of light, and has a very important role in the fields of optical interconnection, laser ranging, Q-switched mode locking, optical display, etc. Where fiber optic communication, the generation of pulsed laser light, depends largely on the modulation of the laser intensity characteristics.
The existing intensity modulators widely applied in the market comprise electro-optical modulators, acousto-optical modulators, electro-absorption modulators and the like, and the preparation and modulation principles of corresponding materials are developed relatively well after years of development, but the existing modulators still have the defects that the size is large and the integration is not facilitated, the modulation voltage is high, the preparation process is complex and the like, and the defects cannot be avoided.
Graphene was first prepared as a completely new two-dimensional material in 2004 by scientists in the uk by simply tearing the tape and determining its properties. It was found to possess excellent electrical and optical properties. The Fermi level structure of graphene can be regulated and controlled in a voltage adding mode, when no voltage is applied, the Fermi level of intrinsic graphene is at a Fermi Dirac point, the graphene at the moment can absorb light with a relatively wide band due to the characteristic of zero band gap, the absorptivity of single-layer graphene to light is 2.3%, when bias voltage is applied to two sides of the graphene, the graphene is subjected to electric doping, along with different bias voltage directions, the Fermi level of the graphene can deviate towards a conduction band or a valence band, and when the deviation exceeds the photon energy of 1/2, due to the principle of Pauli incompatibility, incident photons can not be excited by corresponding valence band electrons or the corresponding positions of the conduction band are occupied by electrons, and the graphene is transparent to incident light at the moment. By applying and removing the voltage, the absorption capacity of the graphene to light can be switched back and forth between absorption and high transmission, and the purpose of light modulation through the voltage is achieved. Due to the excellent electro-optic characteristics of graphene, the modulator manufactured by using graphene has the following advantages:
(1) graphene has a strong ability to interact with light. Compared with the photoelectric device (mainly based on quantum well and quantum-limited Stokes effect materials) used at present, the single-layer graphene (0.3nm) can realize 2.3% of light absorption, and provides a good material basis for more sensitive and finer modulation.
(2) Graphene-based electro-optic modulators may enable high-speed operation. High electron mobility of graphene (200000 cm)2V/s) and ultrafast interband relaxation (ps magnitude) enable graphene to rapidly regulate and control light absorption through an energy band filling effect. Theoretically, an operating rate of 500GHz can be achieved.
(3) The working wavelength range is wide. Due to the unique zero-band-gap energy level structure of the graphene, the graphene can achieve consistent strong absorption capacity of 2.3% in a very wide spectral range, and the same device can simultaneously cover the modulation wavelength range from visible light to middle infrared light based on the performance.
(4) The optical property is easy to regulate. The optical property of the graphene is mainly determined by the energy level structure of the graphene, and the energy level structure can be conveniently controlled manually by means of voltage application, light conduction, chemical doping and the like, so that the controllability of the graphene serving as an electro-optical modulator is extremely high.
Due to the fact that the magnitude of the applied voltage, the modulation speed and the like can be artificially changed through the active light modulation mode of the graphene, the modulator can be better controlled, and the degree of freedom is higher. Various teams at home and abroad focused on this characteristic of graphene to develop various forms of graphene active electro-optic modulators, most of which work is based on silicon-based. However, the silicon-based modulator has many disadvantages of large insertion loss, low coupling efficiency, complex preparation process, and the like. The graphene modulator combined with the optical fiber has a transmission type, a micro-nano optical fiber type, a D-type optical fiber type and the like. The transmissive modulator is limited by the limited spot size, and the number of the carbon atoms involved is small, so the modulation depth is poor. The micro-nano optical fiber manufacturing process depends on an optical fiber tapering technology, and meanwhile, the optical fiber is drawn into a submicron size, so that the micro-nano optical fiber manufacturing process is very unstable and easy to damage. However, the graphene modulator manufactured by using the D-type optical fiber is limited by the limited optical field energy leaked from the optical fiber polishing region, and cannot effectively interact with the graphene to be pasted with the graphene in an efficient manner.
Based on the defects and shortcomings of the prior art, the invention provides an enhanced graphene electroabsorption modulator based on a D-type optical fiber.
Disclosure of Invention
The invention aims to provide a design and a manufacturing method of a D-type optical fiber-based enhanced graphene electroabsorption modulator, which are used for solving the problems of complex manufacturing process and low coupling efficiency of a silicon-based graphene modulator. Meanwhile, the problems that the interaction strength of the graphene modulator in the field of the existing optical fiber is weak and the optical fiber is easy to break are solved.
In order to achieve the purpose, the technical scheme is as follows.
The enhanced graphene electro-absorption modulator based on the D-type optical fiber is characterized in that one side of the fiber cladding of the D-type optical fiber in the circumferential direction is stripped by a certain thickness to enable the thickness of the fiber cladding of a fiber core at the stripping position to be 0.8-1.2 mu m, and the fiber cladding outside the fiber core at the stripping position is outwards provided with the following stacked layered structures in sequence along the radial direction: the optical fiber cladding outside the fiber core at the self-stripping position is sequentially provided with a first graphene layer (1), a dielectric layer (3), a second graphene layer (9) and a PMMA film (4) along the radial direction outwards, the first graphene layer (1) and the second graphene layer (9) are extension-type layers, and metal electrodes (2) are respectively arranged on the first graphene layer (1) and the second graphene layer (9); the stripped fiber core surface optical fiber cladding and the laminated structure can be arranged along the axial length as required, such as point contact, line contact and surface contact, namely the stripped fiber core surface optical fiber cladding and the first graphene layer (1) are in point contact, line contact and surface contact.
According to the method for preparing the modulator, the adopted device comprises a quartz substrate (8) with a long V-shaped groove on the upper surface, a D-shaped optical fiber (6), epoxy glue (7) for sealing the optical fiber and the V-shaped groove, a first graphene layer (1), a dielectric layer (3), a second graphene layer (9), a PMMA layer (4) and a metal electrode (2);
the D-type optical fiber (6) is placed in a long V-shaped groove of a quartz substrate (8), the D-type optical fiber (6) is fixed in the V-shaped groove by using epoxy glue (7), meanwhile, an optical fiber cladding to be stripped protrudes out of the upper surface of the quartz substrate (8), namely, the optical fiber cladding to be stripped is partially exposed out of the V-shaped groove, the optical fiber cladding can be conveniently ground and polished, after the thickness of a partial coating is removed, due to the change of an optical fiber waveguide structure, a part of evanescent field in a polished area of the optical fiber leaks out of the optical fiber, and can interact with a first graphene layer attached subsequently; the first graphene layer and the second graphene layer are sequentially transferred to the surface of the polishing area and are separated by using a dielectric layer to form a parallel plate capacitor model, two metal electrodes are respectively connected with the first graphene layer and the second graphene layer to conveniently apply bias voltage, the bias voltage is applied to the first graphene layer and the second graphene layer through the metal electrodes, an electric field is formed in the parallel plate capacitor, so that chemical potential deviation is brought to the two graphene layers, the offset of the Fermi level of the graphene exceeds 1/2 photon energy along with the increase of the applied voltage, the graphene can be changed from a strong absorption state to a transparent state to light, and the modulation of the light absorption intensity of the graphene is realized; a thin PMMA layer is placed on top of the upper graphene layer because the refractive index (n 1.49) of PMMA is slightly higher than the fiber cladding, which can pull the optical field in the core outward, thereby promoting the interaction strength of the evanescent field with the surface graphene layer.
Preferably, the selected D-type optical fiber can be one of a single mode optical fiber, a multimode optical fiber and a polarization maintaining optical fiber.
Further, the V-groove may be sized to partially embed the optional D-fiber and expose a particular thickness of cladding outside the groove.
Furthermore, the optical fiber is sealed with the V-shaped groove by epoxy glue.
Preferably, the first graphene layer and the second graphene layer used may be one of single-layer graphene or few-layer graphene.
Preferably, the dielectric layer between the first graphene layer and the second graphene layer can be made of Al2O3And other high dielectric constant materials; the thickness was 20 nm.
Preferably, one or more of Au, Pr, Ni and other metal electrodes are adopted as the selected metal electrodes. The thickness of the metal electrode was 50 nm.
The PMMA film on the top layer can be replaced by other PVB films or other high polymer material films with refractive index slightly higher than that of the optical fiber cladding, and the PMMA film is used for guiding the optical field in the optical fiber to leak outwards and enhancing the interaction strength with graphene. The thickness of the top PMMA layer was 900 nm.
Furthermore, two gold electrodes are respectively connected with two graphene layers and are not conducted with each other.
The manufacturing process flow of the device is as follows:
1. making D-shaped optical fibers
And embedding the optical fiber into a quartz V-shaped groove with a customized size, sealing by using epoxy glue, and polishing to remove a part of thickness cladding reserved outside the V-shaped groove, so that the thickness of the remaining cladding of the optical fiber in a polishing area is about 1 um.
2. Preparation of graphene
Single or few graphene layers were grown on copper substrates using chemical vapor deposition, and the quality of the growth was tested using raman spectroscopy and SEM.
3. Transfer of a first sheet of graphene
And spin-coating a PMMA film on the surface of the grown graphene to be used as a supporting layer, removing the copper foil, then floating the graphene/PMMA film on the water surface, and fishing out the graphene/PMMA film by using a quartz substrate/D type optical fiber prepared in advance. The PMMA layer was removed after successful transfer.
4. Preparation of dielectric layer
And (3) using a mask plate as a shield, manufacturing a dielectric layer, covering the surface of the first piece of graphene, and isolating the electric conduction of the two pieces of graphene.
5. Transfer of second sheet of graphene
Transfer the second piece of graphene as in step 3.
6. Preparation of metal electrodes
And reserving a corresponding pattern at the position where the electrode needs to be manufactured by using the other mask plate so as to prepare two metal electrodes. The two electrodes are respectively connected with the first graphene sheet and the second graphene sheet and are not in contact with each other.
7. Fabrication and transfer of top PMMA film
And spin-coating PMMA with a determined thickness on the surface of the copper foil by using a spin coater, drying to form a film, then corroding the copper foil to enable the PMMA film to float on the water surface, and then transferring the PMMA film to the top of the upper graphene.
Compared with the same type of products, the invention has the following advantages:
1. the D-type optical fiber is used as the waveguide, so that the disadvantages of high threshold, complex process, low coupling efficiency and the like of silicon-based waveguide preparation are avoided. And can well realize optical network interconnection.
And 2, the D-shaped optical fiber is provided with a V-shaped groove as a supporting and operating platform, so that the manufacturing is more convenient and feasible. The subsequent processing operation is more reliable and sturdy.
3. The length of the optical fiber polishing area determines the interaction strength of light and graphene, the length of the polishing area can be accurately controlled when a quartz V-shaped groove is customized, and the interaction with the graphene can be rapidly enhanced by changing the length of the D-shaped optical fiber polishing area, so that the modulation effect is improved.
4. According to the invention, the additional PMMA layer is added at the top of the device, and the light field originally bound in the fiber core can be further led out outwards by utilizing the high refractive index of the PMMA layer, so that the interaction strength with graphene is enhanced, and the modulation effect is further improved. In addition, the PMMA on the top layer can also play a role in protection, so that pollution of external substances to the graphene is avoided, and influence of environmental factors on the modulation effect is avoided.
Description of the drawings:
the invention will be further described with reference to the accompanying drawings:
FIG. 1: a structural schematic diagram of an enhanced graphene electroabsorption modulator based on a D-type optical fiber;
FIG. 2: a schematic view of a D-type fiber;
wherein 1: first graphene layer, 2: metal electrode, 3: dielectric layer, 4: PMMA film, 5: core, 6: fiber cladding, 7: epoxy glue, 8: quartz substrate, 9: a second graphene layer; a is the input end of the D-type optical fiber, and b is the output end of the D-type optical fiber.
The specific implementation mode is as follows:
the present invention will be further illustrated with reference to the following examples, but the present invention is not limited to the following examples.
Example 1:
1. making D-shaped optical fibers
An SM-28 optical fiber with a core-cladding ratio of 8/125 is selected, a coating layer with the length of about 1cm is stripped, then a quartz V-shaped groove (8) with a customized size is embedded, and a cladding (6) exposed outside the groove after embedding is 58 microns thick. The gap is sealed by using epoxy glue (7), and the alumina sand paper with the grain diameter of 5um, 3um, 1um and 0.3um is selected for polishing in sequence to remove a part of a coating (6) reserved outside the V-shaped groove. The residual thickness of the cladding after polishing is about 1 um.
2. Preparation of graphene
The single-layer graphene layer (1) is grown on the copper base by using a chemical vapor deposition method, and since graphene covers both sides of the copper foil during growth, the graphene on the back side is removed by using a plasma etching method before use, and the high-quality graphene on the front side is reserved.
3. Transfer of first layer graphene
Spin-coating a PMMA film with the thickness of about 300nm on the surface of the grown first graphene layer (1) to serve as a supporting layer, removing the bottom copper foil by using etching liquid, enabling the graphene/PMMA film to float on the water surface, and fishing out the graphene/PMMA film by using a quartz substrate/D type optical fiber which is prepared in advance. The graphene should be fixed in place across the polished window area of the D-fiber, and the PMMA layer removed with acetone after successful transfer.
4. Preparation of dielectric layer
Using a stainless steel mask plate with the thickness of 0.5mm to reserve an area needing to manufacture a dielectric layer, and depositing a layer of Al with the thickness of 20nm by using an ALD method after the area is tightly attached to a quartz substrate2O3As the dielectric layer (3), the dielectric layer (3) covers the surface of the first graphene layer (1) to isolate the electric conduction of the two graphene layers.
5. Transfer of second laminar graphene layer
The second graphene layer was transferred as in step 3.
6. Preparation of metal electrodes
And using another metal mask plate for manufacturing the electrodes, and reserving openings at positions where the electrodes need to be manufactured. Two gold electrodes (2) with the thickness of 50nm are manufactured by using an electron beam evaporation method, and the positions of the electrodes are respectively arranged on two sides of the D-shaped optical fiber and are respectively 2mm away from the optical fiber. The two electrodes are respectively connected with the first graphene sheet and the second graphene sheet and are not in contact with each other.
7. Fabrication and transfer of top PMMA film
Spin-coating PMMA (4) with the thickness of 900nm on the surface of a copper foil by using a spin coater, etching off the copper foil after drying and film forming, floating the PMMA film on the water surface, transferring to the surface of upper graphene, and drying in a drying oven at 120 ℃.
Example 2:
and conductive silver adhesive is respectively used for leading out copper wires on the two gold electrodes, so that bias voltage can be applied conveniently. The two leads are connected with the positive electrode and the negative electrode of the voltage source, wherein the upper graphene layer is connected with the positive electrode of the power supply, and the lower graphene layer is connected with the positive electrode of the power supply. Continuous laser with the wavelength of 1550nm is introduced into the input end (a) of the D-type optical fiber, and an optical power meter is used for detecting and recording the change of the optical power at the output end (b) of the D-type optical fiber. The voltage applied by the voltage source is continuously changed from 0V to +10V and-10V. It can be seen that the optical power received by the output end (b) of the D-type optical fiber is the lowest at 0V, which corresponds to the strong absorption state of graphene. The optical power received by the output end (b) of the D-type optical fiber is the highest when the voltage is +10V and-10V, and the graphene is in a high transmittance state under the action of the applied voltage.
Claims (10)
1. The enhanced graphene electroabsorption modulator based on the D-type optical fiber is characterized in that one side of the fiber cladding of the D-type optical fiber in the circumferential direction is stripped by a certain thickness to enable the thickness of the fiber cladding of a fiber core at the stripping position to be 0.8-1.2 mu m, and the fiber cladding outside the fiber core at the stripping position is sequentially provided with the following stacked layered structures outwards in the radial direction: the optical fiber cladding outside the fiber core at the self-stripping position is sequentially a first graphene layer (1), a dielectric layer (3), a second graphene layer (9) and a PMMA film (4) along the radial direction outwards, the first graphene layer (1) and the second graphene layer (9) are extension-type layers, and metal electrodes (2) are arranged on the first graphene layer (1) and the second graphene layer (9) respectively.
2. The D-fiber based enhanced graphene electro-absorption modulator according to claim 1, wherein the stripped core surface fiber cladding and the stacked layered structure can be arranged along the axial length according to the need, such as point contact, line contact and surface contact, i.e. the stripped core surface fiber cladding and the first graphene layer (1) are in point contact, line contact and surface contact.
3. The method for preparing the enhanced graphene electro-absorption modulator based on the D-type optical fiber according to the claim 1 or 2, characterized in that the adopted device comprises a quartz substrate (8) with a long V-shaped groove on the upper surface, the D-type optical fiber (6), epoxy glue (7) for sealing the optical fiber and the V-shaped groove, a first graphene layer (1), a dielectric layer (3), a second graphene layer (9), a PMMA layer (4) and a metal electrode (2);
the D-type optical fiber (6) is placed in a long V-shaped groove of a quartz substrate (8), the D-type optical fiber (6) is fixed in the V-shaped groove by using epoxy glue (7), meanwhile, an optical fiber cladding to be stripped protrudes out of the upper surface of the quartz substrate (8), namely, the optical fiber cladding to be stripped is partially exposed out of the V-shaped groove, the optical fiber cladding can be conveniently ground and polished, after the thickness of a partial coating is removed, due to the change of an optical fiber waveguide structure, a part of evanescent field in a polished area of the optical fiber leaks out of the optical fiber, and can interact with a first graphene layer attached subsequently; the first graphene layer and the second graphene layer are sequentially transferred to the surface of the polishing area and are separated by using a dielectric layer to form a parallel plate capacitor model, two metal electrodes are respectively connected with the first graphene layer and the second graphene layer to conveniently apply bias voltage, the bias voltage is applied to the first graphene layer and the second graphene layer through the metal electrodes, an electric field is formed in the parallel plate capacitor, so that chemical potential deviation is brought to the two graphene layers, the offset of the Fermi level of the graphene exceeds 1/2 photon energy along with the increase of the applied voltage, the graphene can be changed from a strong absorption state to a transparent state to light, and the modulation of the light absorption intensity of the graphene is realized; a layer of PMMA film is placed on top of the upper graphene layer, because the refractive index of PMMA is higher than that of the optical fiber cladding, the optical field in the fiber core can be pulled outwards, and the interaction strength of the evanescent field and the surface graphene layer is promoted.
4. The method of claim 3, wherein the selected D-fiber is one of a single mode fiber, a multimode fiber, and a polarization maintaining fiber.
5. The method of claim 3, wherein the first graphene layer and the second graphene layer used are one of single-layer graphene or multi-layer graphene.
6. The method of claim 3, wherein the dielectric layer between the first graphene layer and the second graphene layer is Al2O3And other high dielectric constant materials; the thickness was 20 nm.
7. The method according to claim 3, wherein the selected metal electrode is one or more of Au, Pr, Ni and the like; the thickness of the metal electrode was 50 nm.
8. The method of claim 3, wherein the PMMA film on the top layer can be replaced by other PVB films or other high polymer material films with a slightly higher refractive index than the cladding of the optical fiber, and the PMMA film is used for guiding the optical field in the optical fiber to leak outwards and enhancing the interaction strength with the graphene; the thickness of the top PMMA layer was 900 nm.
9. A method according to claim 3, wherein two gold electrodes are respectively connected to two graphene layers and are non-conducting to each other.
10. The method of claim 3, wherein the device is fabricated by the process comprising:
(1) making D-shaped optical fibers
Embedding the optical fiber into a quartz V-shaped groove with a customized size, sealing the optical fiber by using epoxy glue, and polishing to remove a part of thickness cladding reserved outside the V-shaped groove so as to enable the thickness of the remaining cladding of the optical fiber in a polishing area to be 1 um;
(2) preparation of graphene
Growing a single-layer or few-layer graphene layer on the copper base by using a chemical vapor deposition method, wherein the growth quality is tested by using Raman spectrum and SEM;
(3) transfer of a first sheet of graphene
Spin-coating a PMMA film on the surface of the grown graphene to serve as a supporting layer, removing copper foil, then floating the graphene/PMMA film on the water surface, and fishing out the graphene/PMMA film by using a quartz substrate/D type optical fiber prepared in advance; removing the PMMA layer after successful transfer;
(4) preparation of dielectric layer
Using a mask plate as a shield, manufacturing a dielectric layer, covering the surface of the first layer of graphene, and isolating the electric conduction of the two layers of graphene;
(5) transfer of second layer graphene
Transfer of the second layer of graphene follows step 3.
(6) Preparation of metal electrodes
Using another mask plate, reserving a corresponding pattern at the position where the electrode needs to be manufactured, and preparing two metal electrodes; the two electrodes are respectively connected with the first layer and the second layer of graphene layer and are not in contact with each other;
(7) fabrication and transfer of top PMMA film
And spin-coating PMMA with a determined thickness on the surface of the copper foil by using a spin coater, drying to form a film, then corroding the copper foil to enable the PMMA film to float on the water surface, and then transferring the PMMA film to the top of the upper graphene.
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