CN213042025U - Phase modulator with photoelectric detection function - Google Patents
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- CN213042025U CN213042025U CN202022036725.XU CN202022036725U CN213042025U CN 213042025 U CN213042025 U CN 213042025U CN 202022036725 U CN202022036725 U CN 202022036725U CN 213042025 U CN213042025 U CN 213042025U
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Abstract
The utility model relates to an optic fibre phase modulation technical field, more specifically relates to a phase modulator with photoelectric detection function, include: the device comprises optical fibers, micro-nano strip electrodes, a graphene film and a PMMA film; the optical fiber consists of a cladding and a fiber core; the cladding wraps the fiber core, and an integration region is arranged on the outer side of the cladding; the integrated area is an area with one side of the optical fiber recessed inwards, and the area is provided with an opening to expose the fiber core; the edge of the opening is provided with a micro-nano strip electrode; the graphene film covers the opening of the integration area and the micro-nano strip-shaped electrode; the PMMA film covers the graphene film. Compared with the prior art, the utility model discloses possess two kinds of functions of photoelectric detection and phase modulation simultaneously.
Description
Technical Field
The utility model relates to an optic fibre phase modulation technical field, more specifically relates to a phase modulator who has photoelectric detection function.
Background
With the rapid development and wide application of optical fiber communication and optical fiber sensing technologies, it is very important to develop optical fiber integrated modulators and photodetectors. The phase modulator is a key part of a demodulation system, most commercial electro-optical modulators at present are intensity modulators based on lithium niobate, and the half-wave voltage of the electro-optical modulators is 3-5V. Unlike lithium niobate waveguide or silicon waveguide integrated device, the all-fiber integrated photoelectronic device has the advantages of compact structure, small size, flexibility, portability, electromagnetic interference resistance, capability of being seamlessly connected with a contemporary optical fiber network, and wide application. However, the all-fiber integrated optoelectronic device not only requires a lower-cost processing technology, but also puts higher requirements on number integration and function integration. Due to the limitation of micro-nano processing technology and material characteristics, the integration of optoelectronic devices on optical fibers and the realization of on-line optical signal transmission have been a great challenge.
In fiber optic systems, it is generally desirable for the phase modulator to have polarization insensitivity and low insertion loss characteristics. The operating principle of a phase modulator generally comprises: mechanical deformation, thermo-optic effect, acousto-optic effect and electro-optic effect, wherein an electro-optic phase modulator is a key component in an optical fiber communication system, and half-wave voltage VπIs a parameter of critical importance therein. The existing phase modulator includes: lithium niobate electro-optical phase modulator, piezoelectric ceramic phase modulator and all-optical phase modulator. The all-optical phase modulator is represented by a micro-nano optical fiber waveguide, such as: an all-optical control all-fiber phase shifter and an optical switch of a graphene coated micro-nano fiber are prepared by utilizing graphene thermo-optical effect in a Zhaojian forest team of northwest industrial university in 2015, and ohmic heating protection is performed on graphene under the incident condition of pump lightIt is demonstrated that a change in the effective refractive index of the fiber causes a phase shift.
In the prior art, optoelectronic devices based on optical fiber integration generally have the defects of low integration level, single function, poor performance, and the like. For example, in the chinese utility model with publication number CN208334857U, although a multifunctional device based on graphene for all-fiber polarization control and intensity modulation is proposed, the interdigital electrode used in the device needs to be fabricated on the optical fiber and the glass substrate, and the integration level is affected. And for another example, a photoelectric detector based on a few layers of molybdenum disulfide, which is integrated on the end face of an optical fiber by the xu-fei team of Nanjing university in 2017, has the sensitivity of only 0.6A/W, has a longer response time of 7.1s/3.5s, and cannot transmit an online optical signal. Therefore, a modulator having both functions of photodetection and phase modulation is needed.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, the utility model provides a phase modulator with photoelectric detection function compares with prior art, and this modulator possesses two kinds of functions of photoelectric detection and phase modulation simultaneously.
The utility model adopts the technical proposal that:
a phase modulator having a photoelectric detection function, comprising: the device comprises optical fibers, micro-nano strip electrodes, a graphene film and a PMMA film; the optical fiber consists of a cladding and a fiber core; the cladding wraps the fiber core, and an integration region is arranged on the outer side of the cladding; the integrated area is an area with one side of the optical fiber recessed inwards, and the area is provided with an opening to expose the fiber core; the edge of the opening is provided with a micro-nano strip electrode; the graphene film covers the opening of the integration area and the micro-nano strip-shaped electrode; the PMMA film covers the graphene film.
Specifically, the optical fiber of the phase modulator comprises a fiber core and a cladding, the fiber core is wrapped by the cladding, the fiber core forms the optical fiber, an inward-recessed area is arranged on one side of the optical fiber and serves as an integrated area, and the integrated area of the optical fiber is used for integrating other elements of the phase modulator, so that a platform is provided for device integration. The front of the integrated area is up, and the sequence that other components set gradually from bottom to top in the integrated area is: the device comprises a micro-nano strip electrode, a graphene film and a PMMA film; the graphene film and the PMMA film are transferred to the upper part of the micro-nano strip-shaped electrode in the integrated area through a wet transfer technology, and the graphene film and the PMMA film have the characteristics of flexibility and flexibility, so that the graphene film and the PMMA film are transferred to the optical fiber, cannot be broken, and can be tightly attached to the electrode to form good ohmic contact. The composite film formed by the graphene film and the PMMA film and the micro-nano strip-shaped electrode are arranged on the integrated area, and two functions of photoelectric detection and phase modulation can be realized simultaneously. Firstly, by utilizing the characteristic that the graphene film absorbs photons to generate photon-generated carriers, photocurrent can be formed under the action of bias voltage, so that the function of photoelectric detection is realized. The interaction length of the composite film formed by the graphene film and the PMMA film and the optical fiber can reach more than 5mm, the effective area of detection can be increased, and the detection rate is improved. Then, the thermal optical effect of the PMMA film can be utilized, ohmic heating is carried out by adjusting the bias voltage applied to the micro-nano strip-shaped electrode, the temperature of the PMMA film is increased due to the excellent thermal conductivity of the graphene, the refractive index of the material is changed, and therefore the phase of transmitted light is influenced. When the bias voltage gradually increases from 0V, the reaction is performed on the spectrum analyzer, so that the interference spectrum moves to the long wavelength direction, and the phase delay is realized. The composite film has ultrahigh sensitivity in an optical fiber communication waveband (C, L waveband), so that the modulator has good phase modulation capability.
The graphene is a two-dimensional honeycomb-shaped thin film material and has the characteristics of high carrier mobility, high optical transmittance, wide spectrum absorption, and excellent flexibility and strength, wherein the wide spectrum absorption characteristic enables the phase modulator to work in a near infrared band, and when the graphene is used for photoelectric detection, the graphene can have high response to weak light of 980 and 1610 nm. Therefore, the material is very ideal for being used as a photoelectric detector, a modulator or a sensor. The absorption rate of single-layer graphene to light is only 2.3%, so that a general photoelectric detector based on pure graphene has the characteristic of low sensitivity, the sensitivity of the pure graphene photoelectric detector is about 32A/W, and the number of graphene film layers is 1-9. Graphene is used as the carbon material with the highest thermal conductivity coefficient so far, and the thermal conductivity coefficient can reach 5300W/mK under the condition of no defect; the carrier mobility at room temperature can also reach 15000 cm/(V.s).
Further, the micro-nano strip-shaped electrodes comprise a first micro-nano strip-shaped electrode and a second micro-nano strip-shaped electrode; the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode are symmetrically distributed on two sides of the opening of the integrated area, and the extending direction is the extending direction of the optical fiber section.
Specifically, a first micro-nano strip electrode and a second micro-nano strip electrode are symmetrically distributed on two sides of an opening of an integration area; the graphene film is used as an active layer to absorb photons to generate electron-hole pairs, the PMMA film is used as a light absorption layer to pass through an opening of an optical fiber cladding, an evanescent field is drawn out from a fiber core from a gap between the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode to react with the graphene film, and meanwhile, the PMMA film is used as a thermo-optical material to change the effective refractive index of the PMMA film due to ohmic heating when bias voltage is applied.
Further, the length of the integration area is 2mm-30mm, and the depth of the inward recess is 1/6-5/6 of the diameter of the optical fiber.
Specifically, the length of the integration region and the inward concave depth ensure the interaction strength of light and the graphene/PMMA film, and the detection sensitivity and the modulation efficiency of the phase modulator are effectively improved.
Further, the thickness of the PMMA film is 50 nm-500 nm.
Specifically, PMMA is the acronym for polymethylmethacrylate, which is commonly used as a support carrier in graphene transfer processes. In the scheme, a PMMA solution is prepared by dissolving a PMMA solid in an anisole solution, and a graphene/PMMA thin film is formed by dropping the PMMA solution above copper-based graphene and performing series of treatments such as spin coating, drying, trimming, copper corrosion and the like; the thickness of the PMMA film can be determined by the concentration of the PMMA solution and the rotation speed of a spin coater. The phase modulator does not need a complex graphene processing technology to ensure high carrier mobility, so that the cost can be effectively reduced, and the PMMA film covering the graphene can reduce the adsorption of the graphene to water molecules and impurity gases in air, so that the phase modulator is stable for a long time, and large-scale application is realized.
The refractive index of the PMMA film is 1.49 and is greater than the refractive index of the fiber core, namely 1.468. The PMMA film positioned above the integration area can be used as a light absorption layer to drag an evanescent field out of the fiber core to generate light substance interaction with graphene, so that the light absorption capacity of single-layer graphene is improved, the number of photo-generated carriers is increased to form larger photocurrent, and the phase modulator has the capacity of a high-sensitivity detector.
Further, the distance between the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode is 10nm-65 μm.
Further, the thickness of the micro-nano strip-shaped electrode is 20nm-200 nm.
Specifically, the distance between the first micro-nano strip electrode and the second micro-nano strip electrode and the thickness of the micro-nano strip electrode ensure that an evanescent field in the optical fiber is not absorbed by the metal electrode, can leak from a fiber core and interacts with the graphene/PMMA film.
Further, the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode are manufactured in the integrated area through any one of vacuum electron beam evaporation coating, photoetching, magnetron sputtering, laser engraving and scraping.
Specifically, the micro-nano strip-shaped electrode is directly manufactured on an integrated area of the optical fiber through a vacuum electron beam evaporation coating technology, is simple to manufacture, has a compact structure, and is beneficial to the development trend of high integration and microminiaturization of devices.
Further, the first micro-nano strip electrode and the second micro-nano strip electrode are respectively made of two different types of metals, and the metal is any one of gold, silver, copper, platinum, aluminum, bismuth, titanium, palladium, chromium, zinc, molybdenum and indium tin oxide.
Specifically, the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode in the scheme are made of different types of metal. When the same metal material is used to form a symmetrical electrode structure, although the process is simplified, the function of promoting the migration and separation of photogenerated carriers is lost. Different types of metal materials are adopted to form an asymmetric electrode structure, and due to the difference of work functions or different doping modes of the two metals, a built-in electric field can be formed between the two metals, and a potential difference can be formed between the two electrodes; the potential difference can improve the detection rate and enable the detection of photoelectric detection to be faster.
Further, the optical fiber is any one of single-mode, few-mode, multi-mode, polarization-maintaining and photonic crystal fiber.
Further, the integrated area is formed by polishing and grinding the optical fiber.
Specifically, the optical fiber is a single-mode optical fiber which forms an integrated area after being partially polished and ground, and can be welded with the existing optical fiber system, so that the coupling loss is reduced; when the fiber core of the optical fiber is partially polished, an evanescent opening is formed, evanescent waves leak from the fiber core through the evanescent opening and are absorbed by graphene, and optical-material interaction occurs, so that light transmitted in the optical fiber can be detected and modulated on line; wherein the interaction strength of the evanescent wave and the substance is determined by the distance from the polished surface to the fiber core.
Compared with the prior art, the beneficial effects of the utility model are that:
(1) the integrated area design on the optical fiber enables the modulator to have two functions of photoelectric detection and phase modulation.
(2) Different voltages are applied to the micro-nano strip-shaped electrodes, so that the effective refractive index of the PMMA film is changed, the transmission phase of light is influenced, and the phase modulation function with high sensitivity is realized.
(3) The composite film formed by the graphene film and the PMMA film increases the effective area of detection and improves the detection rate.
Drawings
Fig. 1 is a top view of the phase modulator of the present invention;
fig. 2 is a cross-sectional view of the phase modulator of the present invention;
fig. 3 is a schematic diagram of the phase modulation system of the present invention;
FIG. 4 is an interference spectrum of the simulation experiment of the present invention;
FIG. 5 is a graph showing the relationship between the optical power and the sensitivity of the simulation experiment of the present invention;
FIG. 6 is a diagram of simulation experiment photoelectric response time of the present invention;
description of reference numerals: the composite material comprises a cladding 1, a fiber core 2, a first micro-nano strip electrode 3, a second micro-nano strip electrode 4, a graphene film 5 and a PMMA film 6.
Detailed Description
The drawings of the present invention are for illustration purposes only and are not to be construed as limiting the invention. For a better understanding of the following embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
Examples
This embodiment provides a phase modulator with photoelectric detection function, fig. 1 is the utility model discloses a phase modulator top view, as shown in the figure, include: the device comprises optical fibers, micro-nano strip electrodes, a graphene film 5 and a PMMA film 6; the optical fiber consists of a cladding 1 and a fiber core 2; the cladding 1 wraps the fiber core 2, and an integrated area is arranged on the outer side of the cladding; the integrated region is a region in which one side of the optical fiber is recessed inward, and the region is provided with an opening to expose the fiber core 2; the edge of the opening is provided with a micro-nano strip electrode; the graphene film 5 covers the opening of the integration area and the micro-nano strip-shaped electrode; the PMMA film 6 covers the graphene film 5.
Specifically, the optical fiber of the phase modulator comprises a fiber core 2 and a cladding 1, the cladding 1 wraps the fiber core 2 to form the optical fiber, an inward-recessed area is arranged on one side of the optical fiber to serve as an integrated area, and the integrated area of the optical fiber is used for integrating other elements of the phase modulator, so that a platform is provided for device integration. The front of the integrated area is up, and the sequence that other components set gradually from bottom to top in the integrated area is: the structure comprises a micro-nano strip electrode, a graphene film 5 and a PMMA film 6; the graphene film 5 and the PMMA film 6 are transferred to the upper part of the micro-nano strip-shaped electrode in the integrated area through a wet transfer technology, and the graphene film 5 and the PMMA film 6 have the characteristics of flexibility and flexibility, so that the graphene film and the PMMA film are transferred to the optical fiber, cannot be broken, and can be tightly attached to the electrode to form good ohmic contact. The composite film formed by the graphene film 5 and the PMMA film 6 and the micro-nano strip-shaped electrode are arranged on the integrated area, and two functions of photoelectric detection and phase modulation can be realized simultaneously. Firstly, by utilizing the characteristic that the graphene film 5 absorbs photons to generate photon-generated carriers, photocurrent can be formed under the action of bias voltage, so that the function of photoelectric detection is realized. The interaction length of the composite film formed by the graphene film 5 and the PMMA film 6 and the optical fiber can reach more than 5mm, the effective area of detection can be increased, and the detection rate is improved. Then, the thermophoto effect of the PMMA film 6 can be utilized, ohmic heating is performed by adjusting the magnitude of the bias voltage applied to the micro-nano strip electrode, and the excellent thermal conductivity of the graphene enables the temperature of the PMMA film 6 to rise, and the refractive index of the material to change, thereby affecting the phase of the transmitted light. When the bias voltage gradually increases from 0V, the reaction is performed on the spectrum analyzer, so that the interference spectrum moves to the long wavelength direction, and the phase delay is realized. The composite film has ultrahigh sensitivity in an optical fiber communication waveband (C, L waveband), so that the modulator has good phase modulation capability.
The graphene is a two-dimensional honeycomb-shaped thin film material and has the characteristics of high carrier mobility, high optical transmittance, wide spectrum absorption, and excellent flexibility and strength, wherein the wide spectrum absorption characteristic enables the phase modulator to work in a near infrared band, and when the graphene is used for photoelectric detection, the graphene can have high response to weak light of 980 and 1610 nm. Therefore, the material is very ideal for being used as a photoelectric detector, a modulator or a sensor. The absorption rate of single-layer graphene to light is only 2.3%, so that a general photoelectric detector based on pure graphene has the characteristic of low sensitivity, the sensitivity of the pure graphene photoelectric detector is about 32A/W, and the number of 5 layers of the graphene film is 1-9. Graphene is used as the carbon material with the highest thermal conductivity coefficient so far, and the thermal conductivity coefficient can reach 5300W/mK under the condition of no defect; the carrier mobility at room temperature can also reach 15000 cm/(V.s).
Fig. 2 is a cross-sectional view of the phase modulator of the present invention, as shown in the figure, the micro-nano strip-shaped electrode includes a first micro-nano strip-shaped electrode 3 and a second micro-nano strip-shaped electrode 4; the first micro-nano strip-shaped electrode 3 and the second micro-nano strip-shaped electrode 4 are symmetrically distributed on two sides of an opening of the integrated area, and the extending direction is the extending direction of the optical fiber section.
Specifically, a first micro-nano strip-shaped electrode 3 and a second micro-nano strip-shaped electrode 4 are symmetrically distributed on two sides of an opening of an integration area; the graphene film 5 is used as an active layer to absorb photons to generate electron-hole pairs, the PMMA film 6 is used as a light absorption layer to pass through an opening of the optical fiber cladding layer 1, an evanescent field is drawn out from the fiber core 2 from a gap between the first micro-nano strip-shaped electrode 3 and the second micro-nano strip-shaped electrode 4 to react with the graphene film 5, and meanwhile, when the PMMA film is used as a thermo-optical material to apply bias voltage, the effective refractive index of the PMMA film 6 is changed due to ohmic heating.
Further, the length of the integration area is 2mm-30mm, and the depth of the inward recess is 1/6-5/6 of the diameter of the optical fiber.
Specifically, the length of the integration region and the inward recessed depth ensure the interaction strength of light and the graphene/PMMA thin film 6, and the detection sensitivity and the modulation efficiency of the phase modulator are effectively improved.
Further, the thickness of the PMMA thin film 6 is 50 nm-500 nm.
Specifically, PMMA is the acronym for polymethylmethacrylate, which is commonly used as a support carrier in graphene transfer processes. In the scheme, the PMMA solution is prepared by dissolving PMMA solid in anisole solution, and the graphene/PMMA thin film 6 is formed by dropping the PMMA solution above copper-based graphene and performing series of treatments such as spin coating, drying, trimming, copper corrosion and the like; the thickness of the PMMA film 6 can be determined by the concentration of the PMMA solution and the rotation speed of the spin coater. Because the phase modulator does not need a complex graphene processing technology to ensure high carrier mobility, the cost can be effectively reduced, and the PMMA film 6 covered on the graphene can reduce the adsorption of the graphene to water molecules and impurity gases in air, so that the phase modulator is kept stable for a long time, and large-scale application is realized.
The refractive index of the PMMA film 6 is 1.49 and is 1.468 greater than that of the fiber core 2. The PMMA film 6 positioned above the integration area can be used as a light absorption layer to drag an evanescent field out of the fiber core 2 to interact with graphene to generate light substances, so that the light absorption capacity of single-layer graphene is improved, the number of photogenerated carriers is increased to form a larger photocurrent, and the phase modulator has the capacity of a high-sensitivity detector.
Further, the distance between the first micro-nano strip-shaped electrode 3 and the second micro-nano strip-shaped electrode 4 is 10nm-65 μm.
Further, the thickness of the micro-nano strip-shaped electrode is 20nm-200 nm.
Specifically, the distance between the first micro-nano strip electrode 3 and the second micro-nano strip electrode 4 and the thickness of the micro-nano strip electrodes ensure that an evanescent field in the optical fiber is not absorbed by the metal electrodes, can leak from the fiber core 2, and interacts with the graphene/PMMA film 6.
Further, the first micro-nano strip electrode 3 and the second micro-nano strip electrode 4 are manufactured in the integrated area through any one of vacuum electron beam evaporation coating, photoetching, magnetron sputtering, laser engraving and scraping.
Specifically, the micro-nano strip-shaped electrode is directly manufactured on an integrated area of the optical fiber through a vacuum electron beam evaporation coating technology, is simple to manufacture, has a compact structure, and is beneficial to the development trend of high integration and microminiaturization of devices.
Further, the first micro-nano strip electrode 3 and the second micro-nano strip electrode 4 are respectively made of two different types of metals, wherein the metal is any one of gold, silver, copper, platinum, aluminum, bismuth, titanium, palladium, chromium, zinc, molybdenum and indium tin oxide.
Specifically, the first micro-nano strip-shaped electrode 3 and the second micro-nano strip-shaped electrode 4 in the scheme are made of different types of metals. When the same metal material is used to form a symmetrical electrode structure, although the process is simplified, the function of promoting the migration and separation of photogenerated carriers is lost. Different types of metal materials are adopted to form an asymmetric electrode structure, and due to the difference of work functions or different doping modes of the two metals, a built-in electric field can be formed between the two metals, and a potential difference can be formed between the two electrodes; the potential difference can improve the detection rate and enable the detection of photoelectric detection to be faster.
Further, the optical fiber is any one of single-mode, few-mode, multi-mode, polarization-maintaining and photonic crystal fiber.
Further, the integrated area is formed by polishing and grinding the optical fiber.
Specifically, the optical fiber is a single-mode optical fiber which forms an integrated area after being partially polished and ground, and can be welded with the existing optical fiber system, so that the coupling loss is reduced; when the fiber core 2 of the optical fiber is partially polished, an evanescent opening is formed, evanescent waves leak from the fiber core 2 through the evanescent opening and are absorbed by graphene, and optical-substance interaction occurs, so that light transmitted in the optical fiber can be detected and modulated on line; wherein the intensity of the interaction between the evanescent wave and the substance is determined by the distance from the polished surface to the fiber core 2.
The present embodiment has also carried out the simulation experiment, and the experiment has designed a mach-zehnder interferometer system, and fig. 3 is the utility model discloses a phase modulation system schematic diagram, the system is detailed as shown in the figure.
Firstly, two 3dB optical fiber couplers are used as an input optical beam splitter and an output optical coupler; then, in order to make the optical power of the two arms of the Mach-Zehnder interferometer system equal, an optical power attenuator is added on the optical path of the reference arm; then, the phase modulator in this embodiment is inserted into the signal arm, and a bias voltage is applied to the device through a digital source meter (Keithley 2450) to generate ohmic heating, and a current heats the graphene film 5, so that due to the high thermal conductivity of graphene, the heat is rapidly transferred to the PMMA film 6, thereby causing the effective refractive index to change, and realizing phase modulation.
Fig. 4 is the utility model discloses a simulation experiment interference spectrogram, data are observed the output 1 end of mach-zehnder interferometer system by the spectral analysis appearance and are acquireed, as shown in the figure, the extinction ratio exceeds 16dB, when exerting on the phase modulator bias voltage be 3V, interference spectrum just to long wavelength shift 1 pi, the half-wave voltage of device is 3V promptly, and the half-wave voltage of lithium niobate phase modulator commercial at present is 3 ~ 5V.
FIG. 5 is a graph showing the relationship between the optical power and the sensitivity of the simulation experiment of the present invention, as shown in the figure, the wavelength of the incident light is 980, 1310, 1550, 1610nm respectivelyIn this case, the photocurrent (shown in fig. 5 (a)) and sensitivity (shown in fig. 5 (b)) of the device varied with the incident light power; when the input optical power is 1nW, the sensitivities corresponding to the four wavelengths are all larger than 1 multiplied by 103A/W shows that the phase modulator of the embodiment has higher sensitivity and wide spectral stability in the optical fiber communication band. With the continuous increase of the incident light power, the photocurrent is gradually increased and then stops increasing to maintain the level, a saturation state is presented, the corresponding sensitivity is also reduced along with the saturation of the photocurrent, and the incident light power corresponding to the reduction inflection point is called as saturated absorption power; when the incident light power is small, one or more photon-generated carriers can be generated by absorbing one photon by the graphene, and move towards the first micro-nano strip-shaped electrode 3(3) and the second micro-nano strip-shaped electrode 4(4) under the action of bias voltage to form photocurrent, and the photocurrent generated when the number of absorbed photons is more is larger; due to the saturation absorption effect of the graphene, when the incident light power is higher than the saturation absorption power, the graphene does not absorb redundant photons any more, the number of generated photon-generated carriers is not increased any more, and the photocurrent is constant.
Fig. 6 is a diagram of the photoelectric response time of the simulation experiment of the present invention, as shown in the figure, when the incident wavelength is 1550nm and the applied bias voltage is 0.3v, the response time of the phase modulator is 61.8ms, and the rise time and the fall time are equal, which illustrates that the separation and recombination times of the electron-hole pairs are substantially equal; from the above experimental data, it can be known that the photoelectric detection performance of the phase modulator in the embodiment is superior to that of other optical fiber photoelectric detectors of the same type.
The phase modulator in the embodiment realizes that one device has two functions of photoelectric detection and phase modulation on the optical fiber. The experimental data show that the phase modulator has the photoelectric detection performance of high sensitivity, broadband detection and short response time, and also has the phase modulation performance of large extinction ratio and small half-wave voltage. The phase modulator is integrated by all optical fibers, has small volume, light weight and small insertion loss, can be completely compatible with the modern optical fiber communication and sensing system, has low requirements on graphene processing technology, is simple to manufacture, has low cost and is easy to realize large-scale production and application.
It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the technical solutions of the present invention, and are not limitations to the specific embodiments of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims (10)
1. A phase modulator having a photoelectric detection function, comprising: the device comprises optical fibers, micro-nano strip electrodes, a graphene film and a PMMA film; the optical fiber consists of a cladding and a fiber core; the cladding wraps the fiber core, and an integration region is arranged on the outer side of the cladding; the integrated area is an area with one side of the optical fiber recessed inwards, and the area is provided with an opening to expose the fiber core; the edge of the opening is provided with a micro-nano strip electrode; the graphene film covers the opening of the integration area and the micro-nano strip-shaped electrode; the PMMA film covers the graphene film.
2. The phase modulator with the photoelectric detection function according to claim 1, wherein the micro-nano strip-shaped electrodes comprise a first micro-nano strip-shaped electrode and a second micro-nano strip-shaped electrode; the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode are symmetrically distributed on two sides of the opening of the integrated area, and the extending direction is the extending direction of the optical fiber section.
3. The phase modulator with photoelectric detection function of claim 1, wherein the length of the integration region is 2mm-30mm, and the depth of the inward recess is 1/6-5/6 of the diameter of the optical fiber.
4. The phase modulator with photoelectric detection function of claim 1, wherein the thickness of the PMMA thin film is 50nm to 500 nm.
5. The phase modulator with photoelectric detection function of claim 2, wherein the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode are spaced at a distance of 10nm to 65 μm.
6. The phase modulator with photoelectric detection function of claim 2, wherein the thickness of the micro-nano strip-shaped electrode is 20nm to 200 nm.
7. The phase modulator with photoelectric detection function of claim 2, wherein the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode are fabricated in the integration area by any one of vacuum electron beam evaporation coating, photolithography, magnetron sputtering, laser engraving and scraping.
8. The phase modulator with the photoelectric detection function of claim 2, wherein the first micro-nano strip-shaped electrode and the second micro-nano strip-shaped electrode are respectively made of two different types of metals, and the metals are any one of gold, silver, copper, platinum, aluminum, bismuth, titanium, palladium, chromium, zinc, molybdenum and indium tin oxide.
9. The phase modulator with photoelectric detection function according to any one of claims 1 to 8, wherein the optical fiber is any one of single mode, few mode, multi mode, polarization maintaining, photonic crystal fiber.
10. The phase modulator having photoelectric detection function according to any one of claims 1 to 8, wherein the integrated region is formed by polishing an optical fiber.
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| CN115755269A (en) * | 2023-01-09 | 2023-03-07 | 武汉中科锐择光电科技有限公司 | Optical frequency comb generation device and method based on precise optical fiber micro-nano structure |
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2020
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115755269A (en) * | 2023-01-09 | 2023-03-07 | 武汉中科锐择光电科技有限公司 | Optical frequency comb generation device and method based on precise optical fiber micro-nano structure |
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