CN102608776A - Novel wide-spectrum MZI (Mach Zehnder interferometer) electro-optical switch - Google Patents
Novel wide-spectrum MZI (Mach Zehnder interferometer) electro-optical switch Download PDFInfo
- Publication number
- CN102608776A CN102608776A CN2011100235978A CN201110023597A CN102608776A CN 102608776 A CN102608776 A CN 102608776A CN 2011100235978 A CN2011100235978 A CN 2011100235978A CN 201110023597 A CN201110023597 A CN 201110023597A CN 102608776 A CN102608776 A CN 102608776A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- phase generator
- mzi
- rank
- district
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A novel wide-spectrum MZI (Mach Zehnder interferometer) electro-optical switch belongs to guided wave optics, integrated optoelectronics and the optical communication technology, is used for completing selecting, switching, self-healing, protecting and multiplexing of an upper channel and the lower channel of any central-wavelength lower channel and overcomes the defects of narrow output spectrum and inapplicability to multiple channels of conventional electro-optical switches. The novel wide-spectrum MZI electro-optical switch comprises an MZI electro-optical area, an N-step phase generator, an M-step phase generator, waveguide connection areas (1 and 2), a waveguide input area and a waveguide output area, wherein the MZI electro-optical area is respectively connected with the N-step phase generator and the M-step phase generator through the waveguide connection areas (1 and 2), and the N-step phase generator and the M-step phase generator are connected with the waveguide input area and the waveguide output area respectively. When the wavelength changes, phase shift drifting of the MZI electro-optical area can be compensated by total phase shift generated by the N-step phase generator and the M-step phase generator, the total phase shift and total output optical power can tend to be constant, and wavelength dependency is reduced. Complexity of the design of the electro-optical switch in a wavelength division multiplexing system can be reduced, and the performances of the optical communication system and the reconfigurable on-chip optical network are improved.
Description
Technical field
The invention belongs to Wave Guiding Optics, integrated optoelectronics and optical communication technique, be specifically related to a kind of new molded breadth spectrum MZI electrooptical switching.
Background technology
In recent years, the design of the electrooptical switching of based compound semiconductor material, polymeric material and crystalline material and array thereof and making have obtained bigger progress.In order effectively to reduce switching voltage, to relax wave length shift and dimensional tolerance range, reduction and insert loss and crosstalk and reduce device size, people's research has also been reported the electrooptic modulator switch based on different waveguide structure such as charge carrier injection effect, linear electro-optic effect and photorefractive effect and electrode structure.In wavelength-division multiplex (WDM) optical communication system, have wide spectrum and be a mandatory attribute of photoswitch applicable to the switching of each bar communication channel.Yet we find for the traditional structure directional couple electrooptical switching of being reported and traditional structure Mach-Ceng Deer (MZI) electrooptical switching; It is crosstalked and increases rapidly along with the increase of wave length shift; This will cause the output spectrum of device narrower; When crosstalking less than-30 dB, this spectral range is less than 60 nm in theory.If the covering wavelength coverage of wdm system is greater than 60 nm, these electrooptical switchinges can not be realized normal switching function, cause the deterioration of system performance.For the influence that farthest reduces wave length shift and widen spectral range, patent of the present invention has designed a kind of based on one
NRank phase generator and one
MThe new molded breadth spectrum MZI electrooptical switching structure of rank phase generator, device can work in the S+C+L wave band.When
N=
MThe time, constitute symmetrical structure, when
N≠
MThe time, constitute unsymmetric structure, and
N+
M>=1.Its cardinal principle is that the drift of MZI electric light district's phase shift of being caused by wave length shift can compensate through the phase shift that two phase generators produce; And then make that the phase shift between the light wave pattern is all keeping constant under the wavelength arbitrarily in two waveguides of device; Because the device Output optical power depends on total phase shift, so device will obtain the output spectrum of broad.
Summary of the invention
The purpose of this invention is to provide a kind of new molded breadth spectrum MZI electrooptical switching; Work in the S+C+L wave band; Be used to have wide spectrum, multi channel optical communication wavelength-division multiplex system; The upper and lower road of self-healing and protection, channel of accomplishing selection and switching, the channel of any centre wavelength lower channel is multiplexing, overcomes the shortcoming that traditional directional couple or MZI electrooptical switching output spectrum are narrower, can't be applicable to a plurality of channels.
The technical scheme that the present invention adopts is:
1. comprise like lower unit: MZI electric light district,
NThe rank phase generator,
MRank phase generator, waveguide bonding pad 1, waveguide bonding pad 2, input waveguide district and output waveguide district; The annexation of each unit is: the input end in MZI electric light district through waveguide bonding pad 1 with
NThe output terminal of rank phase generator links to each other, the output terminal in MZI electric light district through waveguide bonding pad 2 and
MThe input end of rank phase generator links to each other,
NThe input end of rank phase generator links to each other with the input single-mode fiber through the input waveguide district,
MThe output terminal of rank phase generator links to each other with the output single-mode fiber through the output waveguide district; The MZI electrooptical switching has an input port and a delivery outlet, and the input port is the input end of input waveguide district top set waveguide, and delivery outlet is the output terminal of output waveguide district inferior division waveguide, and the two links to each other with input, output single-mode fiber respectively; The input port and the waveguide cross-sectional dimensions of delivery outlet and input, to export the single-mode fiber size similar.
The length in MZI electric light district does
L EO, two waveguide spacings do
dComprise waveguide and electrode two parts; Waveguide is a thermometal cladding type single mode waveguide, and substrate is silicon (Si), and upper and lower cushion is non-electro-optic polymer material; Sandwich layer is an electro-optic polymer material; Upper limiting layer is an air, and ground electrode places between substrate and the bottom breaker, and two surface electrodes place on the cushion and by upper limiting layer and cover;
NThe rank phase generator comprise be labeled as DC 11, DC 12 ..., DC 1 (
N+ 1) altogether
N + 1 directional coupler unit, and be labeled as ODL 11, ODL12 ..., ODL 1
NAltogether
NIndividual optical delay line unit;
NThe rank phase generator by DC 11, ODL 11, DC 12, ODL 12 ..., DC 1
N, ODL 1
N, DC1 (
N+ 1) cascade forms,
NThe input end A1 of rank phase generator, B1 link to each other through curved waveguide with the input end of the upper and lower waveguide of DC11,
NThe output terminal C1 of rank phase generator, D1 and DC 1 (
NThe output terminal of upper and lower waveguide+1) links to each other through curved waveguide; Each directional coupler unit has independently be coupled spacing and coupled zone length, and it is poor that each optical delay line unit has independent paths;
MThe rank phase generator comprise be labeled as DC 2 (
M+ 1), DC 2
M..., DC 21 altogether
M + 1 directional coupler unit, and be labeled as ODL 2
M..., ODL 22, ODL 21 altogether
MIndividual optical delay line unit;
MThe rank phase generator by DC 2 (
M+ 1), ODL 2
M, DC 2
M..., ODL 22, DC 22, ODL 21, DC 21 cascades form,
MThe input end C2 of rank phase generator, D2 and DC 2 (
MThe input end of upper and lower waveguide+1) links to each other through curved waveguide,
MThe output terminals A 2 of rank phase generator, B2 link to each other through curved waveguide with the output terminal of the upper and lower waveguide of DC 21; Each directional coupler unit has independently be coupled spacing and coupled zone length, and it is poor that each optical delay line unit has independent paths;
NRank,
MThe waveguide in rank phase generator, waveguide bonding pad 1, waveguide bonding pad 2, input waveguide district and output waveguide district is a monometallic cladding type single mode waveguide; Substrate is silicon (Si); Upper and lower cushion is non-electro-optic polymer material; Sandwich layer is an electro-optic polymer material, and upper limiting layer is an air, and ground electrode places between substrate and the bottom breaker.
2.
NRank or
MTop set's waveguide length of each optical delay line unit of rank phase generator is during greater than the inferior division waveguide length, and the path difference of optical delay line unit is greater than 0; Top set's waveguide length of each optical delay line unit of phase generator is during less than the inferior division waveguide length, and the path difference of optical delay line unit is less than 0; The exponent number of two phase generators
NWith
MNumerical value satisfy
N+
M>0, and be integer;
NWith
MWhen equating, device is a symmetrical structure,
NWith
MWhen unequal, device is a unsymmetric structure.
3. adopt a kind of novel non-linearity lowest mean square optimized Algorithm right
NRank,
MThe rank phase generator is done structure optimization, and detailed process is: the scope of given device operation wavelength, and in this scope, calculate the scope of MZI electric light district phase shift drift; Derive
NThe rank phase generator with
MThe amplitude transfer function of rank phase generator, and calculate total phase shift expression formula of the two generation; Utilize approximating method, the non-structural parameters in total phase shift expression formula are changed into the function of phase generator structural parameters and operation wavelength; The initial value of given each structural parameters, alternation step-length and accuracy value are utilized non-linear lowest mean square optimized Algorithm, and search makes
NThe rank phase generator with
MTotal phase shift of rank phase generator and the minimum values of the structural parameters of MZI phase shift drift square error; Judge the validity of parameter value and the precision of square error; As do not meet the demands, then change initial parameter value, search again, otherwise, withdraw from the optimization cyclic process, obtain
NRank,
MRank phase generator parameters optimization value.
4. the waveguide shapes in waveguide bonding pad 1, waveguide bonding pad 2, input waveguide district and output waveguide district is a curved waveguide; The spacing of two waveguide output terminals is greater than the single-mode fiber diameter in input waveguide district, the output waveguide district.
5. the impressed voltage of MZI electric light district two surface electrodes is respectively
U 1With
U 2, in working order down, the two surface electrode voltages in MZI electric light district
U 1With
U 2For adding driving voltage and polarity is opposite, form and recommend driving; Under polarized state, the two surface electrode voltages in MZI electric light district
U 1With
U 2Be and be polarizing voltage, the polarization of formation homophase.
6. when being applied to voltage on MZI electric light district two surface electrodes and being the ON of-state voltage, the luminous power of delivery outlet reaches maximal value; When being applied to voltage on MZI electric light district two surface electrodes and being the OFF of-state voltage, the luminous power of delivery outlet reaches minimum value.
7. the optical wavelength tuning range that is input to MZI electrooptical switching input port is 1400 ~ 1700 nm, can cover S, C, the whole wave bands of L; In input optical wavelength is the tuning range of 1400 ~ 1700 nm, under ON or OFF state, MZI electric light district,
NThe rank phase generator,
MThe phase shift that the rank phase generator produces all is that wavelength is relevant, and total phase shift of three is constant.
The course of work of the present invention is:
1. from the light signal of importing single-mode fiber, through top set's waveguide entering in input waveguide district
NThe rank phase generator,
NThe rank phase generator
N+ 1 directional coupler unit with
NUnder the effect of individual light beam delay line,
NIn two waveguides of rank phase generator in two waveguides phase place of light wave pattern all produce the variation relevant with amplitude with operation wavelength.
NThe output light signal of rank phase generator gets into MZI electric light district through waveguide bonding pad 1; When the impressed voltage on the MZI electric light district two surperficial working electrodes is 0 V; The propagation constant of light wave pattern equates in two waveguides of electric light district, phase differential is that pattern phase differential between 0, two waveguide does not change.Then, the light wave pattern gets into via waveguide bonding pad 2
MThe rank phase generator,
MThe rank phase generator
M+ 1 directional coupler unit with
MUnder the effect of individual light beam delay line,
MLight signal also will experience the variation of amplitude and the phase place relevant with operation wavelength in two waveguides of rank phase generator.At last, from
MIt is maximum that the luminous power of exporting in the inferior division waveguide of rank phase generator reaches, and export through the output single-mode fiber through the output waveguide district.This duty is defined as the ON state.
2. from the light signal of importing single-mode fiber, through top set's waveguide entering in input waveguide district
NThe rank phase generator,
NThe rank phase generator
N+ 1 directional coupler unit with
NUnder the effect of individual light beam delay line,
NThe variation relevant with operation wavelength all takes place with amplitude in the phase place of light wave pattern in two waveguides of rank phase generator.
NThe output light signal of rank phase generator inputs to MZI electric light district through waveguide bonding pad 1; When the external working voltage on MZI electric light district two surface electrodes is switching voltage; The propagation constant generation mismatch of light wave pattern in two waveguides of electric light district; The phase differential of the two is not that the variation relevant with operation wavelength takes place the pattern phase differential between 0, two waveguide.Then, the light wave pattern gets into via waveguide bonding pad 2
MThe rank phase generator,
MThe rank phase generator
M+ 1 directional coupler unit with
MUnder the effect of individual light beam delay line,
MLight signal in two waveguides of rank phase generator also will experience the variation of amplitude and the phase place relevant with operation wavelength.At last, from
MThe luminous power of exporting in the inferior division waveguide of rank phase generator is 0, and exports through the output single-mode fiber via the output waveguide district.This duty is defined as the OFF state.
3. under the central task wavelength, when the applying voltage and be 0 of MZI electric light district two surface electrodes, according to the 1 described course of work, it is maximum that Output optical power will reach, and because there is loss in waveguide mode, this Output optical power is not equal to input optical power; When the applying voltage and be switching voltage of MZI electric light district two surface electrodes, according to the 2 described courses of work, it is minimum that Output optical power will reach, and because phase compensation can not strictness reach desirable degree with crosstalk compensation, this minimum optical power is not 0.
4. under non-central operation wavelength, through optimizing,
NRank,
MTotal phase shift of rank phase generator can compensate the phase shift drift in MZI electric light district,
NRank,
MThe amplitude of rank phase generator coupling coefficient satisfies the crosstalk compensation condition.When the applying voltage and be 0 of MZI electric light district two surface electrodes, according to the 1 described course of work, it is maximum that Output optical power will reach, and because there is loss in waveguide mode, this Output optical power is not equal to input optical power; When the applying voltage and be switching voltage of MZI electric light district two surface electrodes, according to the 2 described courses of work, it is minimum that Output optical power also will reach, and because phase compensation can not strictness reach desirable degree with crosstalk compensation, this minimum optical power is not 0.
5. under different input optical wavelengths,
NRank,
MThe phase shift level that the rank phase generator can compensate and the approximation ratio of needed phase shift level there are differences, and the loss of light wave pattern is different in the waveguide.According to the 1 and 2 described courses of work, when the applying voltage and be 0 of MZI electric light district two surface electrodes, the maximum Output optical power under the different operating wavelength is also not strict identical; When the applying voltage and be switching voltage of MZI electric light district two surface electrodes, the minimum Output optical power under the different operating wavelength is also not strict identical.In the spectral range of broad, the Output optical power of device under ON state and OFF state maintains certain level, and device has the output spectrum scope of broad.
The invention has the beneficial effects as follows:
Owing to structurally adopted
NRank with
MThe rank phase generator, and use the non-linear lowest mean square approximate algorithm that proposes the structural parameters of the two are optimized, under any wavelength; Total phase shift that the two produced can both compensate the phase shift drift in MZI electric light district; Thereby keep the total phase shift of device constant basically, make device in the spectral range of broad, loss and delustring specific energy remain on respectively on certain level; Widened the output spectrum scope of device greatly; Overcome traditional structure directional couple electrooptical switching, the narrow shortcoming of traditional structure MZI electrooptical switching output spectrum, can further reduce the complexity of electrooptical switching design in the wavelength-division multiplex system, improved the performance of optical communication system.
Description of drawings
Fig. 1 is a structural drawing of the present invention;
Fig. 2 does
NThe structural drawing of rank phase generator;
Fig. 3 does
MThe structural drawing of rank phase generator;
Fig. 4 does
NOptical delay line structural drawing in the phase generator of rank;
Fig. 5 does
MOptical delay line structural drawing in the phase generator of rank;
Fig. 6 is MZI electric light district waveguide figure;
Fig. 7 is non-MZI electric light district waveguide figure;
Fig. 8 is that spectrum of the present invention is expanded schematic diagram;
Fig. 9 optimizes process flow diagram based on the phase generator of non-linear lowest mean square optimized Algorithm;
Figure 10 is the OVERALL OPTIMIZA-TION DESIGN FOR process flow diagram of device;
Figure 11 is the prepared process flow diagram of device;
Figure 12 is test and definite flow process of devices switch voltage and spectral range.
Embodiment
Consult Fig. 1, be depicted as structural drawing of the present invention.Adopt the MZI structure, the MZI district is the electric light district, respectively uses one in the both sides in MZI electric light district
NRank phase generator and one
MThe rank phase generator.Comprise like lower unit: MZI electric light district,
NThe rank phase generator,
MRank phase generator, waveguide bonding pad 1, waveguide bonding pad 2, input waveguide district, output waveguide district.Annexation between each unit is: the input end in MZI electric light district with
NThe output terminal of rank phase generator links to each other through waveguide bonding pad 1, the output terminal in MZI electric light district with
MThe input end of rank phase generator links to each other through waveguide bonding pad 2,
NThe input end of rank phase generator links to each other with input optical fibre through the input waveguide district,
MThe output terminal of rank phase generator links to each other with the output single-mode fiber through the output waveguide district.Device has an input port and a delivery outlet, and the input port is the input end of input waveguide district top set waveguide, and the delivery outlet of device is the output terminal of output waveguide district inferior division waveguide, and the two links to each other with the output single-mode fiber with the input single-mode fiber respectively.
Consult Fig. 2, be depicted as
NThe structural drawing of rank phase generator.It comprises be labeled as DC 11, DC 12 ..., DC 1 (
N+ 1) altogether
N + 1 directional coupler unit, and be labeled as ODL 11, ODL12 ..., ODL 1
NAltogether
NIndividual optical delay line unit;
NThe rank phase generator by DC 11, ODL 11, DC 12, ODL 12 ..., DC 1
N, ODL1
N, DC 1 (
N+ 1) cascade forms,
NThe input end A1 of rank phase generator, B1 link to each other through curved waveguide with the input end of the upper and lower waveguide of DC 11,
NThe output terminal C1 of rank phase generator, D1 and DC 1 (
NThe output terminal of upper and lower waveguide+1) links to each other through curved waveguide; Coupling spacing between each directional coupler unit two waveguide does
, length does
(
j=1,2,
N+ 1); The lateral length of each light delay unit two waveguide does
, the path difference of optical delay line unit does
(
j=1,2,
N).The input end of phase generator is A1 and B1, and output terminal is C1 and D1.Two waveguides of phase generator are single mode waveguide.
Consult Fig. 3, be depicted as
MThe structural drawing of rank phase generator.It comprises be labeled as DC 2 (
M+ 1), DC 2
M..., DC 21 altogether
M + 1 directional coupler unit, and be labeled as ODL 2
M..., ODL 22, ODL 21 altogether
MIndividual optical delay line unit;
MThe rank phase generator by DC 2 (
M+ 1), ODL 2
M, DC 2
M..., ODL 22, DC 22, ODL 21, DC 21 cascades form,
MThe input end C2 of rank phase generator, D2 and DC 2 (
MThe input end of upper and lower waveguide+1) links to each other through curved waveguide,
MThe output terminals A 2 of rank phase generator, B2 link to each other through curved waveguide with the output terminal of the upper and lower waveguide of DC 21; Coupling spacing between each directional coupler unit two waveguide does
, length does
(
j=1,2,
M+ 1); The lateral length of each light delay unit two waveguide does
, the path difference of optical delay line unit does
(
j=1,2,
M).The input end of phase generator is C2 and D2, and output terminal is A2 and B2.Two waveguides of phase generator are single mode waveguide.
Consult Fig. 4, be depicted as
NThe structural drawing of optical delay line unit in the phase generator of rank.Lag line total length in the horizontal is
; Overall height in the vertical is
, and input end (diagram left end) is respectively
and
with the coupling spacing that output terminal (diagram right-hand member) is located two waveguides.Shown in figure (a); Top set's waveguide is a curved waveguide; Its total length is greater than inferior division, and
is greater than 0; Shown in figure (b); The inferior division waveguide is a curved waveguide; The total length of top set's waveguide is less than inferior division, and
is less than 0.
Consult Fig. 5, be depicted as
MThe structural drawing of optical delay line unit in the phase generator of rank.Lag line total length in the horizontal is
; Overall height in the vertical is
, and input end (diagram left end) is respectively
and
with the coupling spacing that output terminal (diagram right-hand member) is located two waveguides.Shown in figure (a); Top set's waveguide is a curved waveguide; Its total length is greater than inferior division, and
is greater than 0; Shown in figure (b); The inferior division waveguide is a curved waveguide; The total length of top set's waveguide is less than inferior division, and
is less than 0.
Consulting Fig. 6, is example with the ridge waveguide, is depicted as the electric light district sectional view of patent of the present invention.Adopt silicon (Si) substrat structure; Upper and lower cushion is non-electro-optic polymer material, and sandwich layer is an electro-optic polymer material, and the upper limiting layer material that is covered in surperficial working electrode is an air; Drive electrode comprises a ground electrode and a pair of surface electrode, and electrode material adopts metal material.Form two push-pull configurations that drive between MZI two arms; The thickness of sandwich layer is
; The thickness of bottom breaker is
; The thickness of last cushion is
, and the thickness of ground electrode and two surface electrodes is
.The core width of ridge waveguide does
a, core thickness does
, the ridge height does
hThe width of two surface electrodes is
W, the spacing of two surface electrodes does
G, the spacing between two waveguides does
d 1
Consulting Fig. 7, is example with the ridge waveguide, is depicted as the non-electric light district sectional view of patent of the present invention.Adopt silicon (Si) substrat structure, upper and lower cushion is non-electro-optic polymer material, and sandwich layer is an electro-optic polymer material, and the upper limiting layer material that is covered on the cushion is an air.The thickness of sandwich layer is
; The thickness of bottom breaker is
, and the thickness of last cushion is
.The core width of ridge waveguide does
a, core thickness does
, the ridge height does
hIn the ridge waveguide in non-electric light district; Ground electrode still exists, and its thickness still is
.The two waveguide spacings in non-electric light district
dBecome with transmission location.
Consult Fig. 8, the spectrum that is depicted as patent of the present invention is expanded schematic diagram.When operation wavelength (
λ) when changing, the phase shift in MZI electric light district is also along with changing, simultaneously
NRank with
MPhase generator total generation phase shift in rank also changes thereupon.Through optimization to two phase generator structural parameters,
NRank with
MTotal phase shift that the rank phase generator produces approaches the phase shift drift in MZI electric light district, makes total phase shift of device and Output optical power be tending towards constant, has realized the output spectrum scope of broad.
Consult Fig. 9, be depicted as based on the phase generator of non-linear lowest mean square optimized Algorithm and optimize process flow diagram.At first, the scope of given device operation wavelength, and in this scope, calculate the scope of MZI electric light district phase shift drift.Secondly, derive
NThe rank phase generator with
MThe amplitude transfer function of rank phase generator, and calculate total phase shift expression formula of the two generation.The 3rd, utilize approximating method, the non-structural parameters in total phase shift expression formula are changed into the function of phase generator structural parameters and operation wavelength.The 4th, the initial value of given each structural parameters, alternation step-length and accuracy value are utilized non-linear lowest mean square approximate algorithm, and in operating wavelength range, search makes
NThe rank phase generator with
MTotal phase shift of rank phase generator and the minimum values of the structural parameters of MZI phase shift drift square error.At last, judge the validity of this parameter value and the precision of final square error.As do not meet the demands, then change initial parameter value, search again, otherwise, withdraw from the optimization cyclic process.
Consult Figure 10, be depicted as the OVERALL OPTIMIZA-TION DESIGN FOR process flow diagram of device.Optimize and mainly comprise waveguiding structure optimization, electrode structure optimization, phase generator structure optimization three parts.The centre wavelength of selector is 1550 nm during optimization.Waveguiding structure is optimized: at first, and to the layers of material of selecting, promptly at upper and lower cushion
,
When enough thick, confirm that the single mode waveguide size is that the core width does
a, core thickness does
, the ridge height does
hSecondly; When promptly
is enough big, confirm that upper and lower buffer layer thickness is
,
at the thickness of surface electrode and ground electrode.Then, promptly at fixed above-mentioned parameter
a,
,
h,
,
Following, confirm that the thickness of surface electrode and ground electrode is
Electrode structure is optimized: at first, optimize electrode width
W, electrode separation
GWith the waveguide spacing
d, to obtain maximum electrooptical modulation efficient.Secondly, optimize MZI electric light section length, to obtain lower switching voltage and to insert loss.The phase generator structure optimization: calculate the phase shift drift in MZI electric light district, and right according to flow process shown in Figure 9
NThe rank phase generator with
MThe structural parameters of rank phase generator are optimized.
Consult Figure 11, be depicted as the prepared process flow diagram of device.At first; The metal electrode of going up vapor deposition one deck design thickness at cleaned Si substrate (shown in the figure (a)) is as ground electrode (figure (b)); Be coated with bottom breaker (figure (c)) then; Then be coated with the electric light sandwich layer, use the waveguide mask plate, form the waveguide (figure (d)) of design shape to version and after doing oxygen reaction ion etching.Then be coated with cushion (figure (e)).At last, use the electrode mask plate that version is done exposure-processed and used developing liquid developing then, the surface electrode shape that can obtain to design (figure (f)) making on the Si sheet of waveguide deposited metal film and being coated with one deck photoresist.
Consult Figure 12, be depicted as test and definite flow process of devices switch voltage and spectral range.The operation wavelength of setting laser device is 1550 nm, and coarse adjustment and fine setting WV make Output optical power reach maximum, and corresponding impressed voltage is the ON of-state voltage of device.On two surface electrodes, apply the ON of-state voltage, and regulate the operation wavelength of laser instrument, represent with decibel after writing down the Output optical power value under each wavelength and doing the normalization processing, obtain the loss of device.The operation wavelength that resets laser instrument is 1550 nm, and coarse adjustment and fine setting WV make Output optical power reach minimum, and this voltage is the OFF of-state voltage of device.On two surface electrodes, apply the OFF of-state voltage, and regulate the operation wavelength of laser instrument, represent with decibel after writing down the Output optical power value under each wavelength and doing the normalization processing, obtain crosstalking of device.At last, in institute's tuned light spectral limit, calculate the extinction ratio numerical value under each operation wavelength.And, confirm the output spectrum scope of device based on extinction ratio and the loss level set.
Claims (7)
1. new molded breadth spectrum MZI electrooptical switching is characterized in that:
Comprise like lower unit: MZI electric light district,
NThe rank phase generator,
MRank phase generator, waveguide bonding pad 1, waveguide bonding pad 2, input waveguide district and output waveguide district;
The annexation of each unit is: the input end in MZI electric light district through waveguide bonding pad 1 with
NThe output terminal of rank phase generator links to each other, the output terminal in MZI electric light district through waveguide bonding pad 2 and
MThe input end of rank phase generator links to each other,
NThe input end of rank phase generator links to each other with the input single-mode fiber through the input waveguide district,
MThe output terminal of rank phase generator links to each other with the output single-mode fiber through the output waveguide district;
The MZI electrooptical switching has an input port and a delivery outlet; The input port is the input end of input waveguide district top set waveguide; Delivery outlet is the output terminal of output waveguide district inferior division waveguide; The two links to each other with input, output single-mode fiber respectively, the input port and the waveguide cross-sectional dimensions of delivery outlet and input, to export the single-mode fiber size similar;
The length in MZI electric light district does
L EO, two waveguide spacings do
dComprise waveguide and electrode two parts; Waveguide is a thermometal cladding type single mode waveguide, and substrate is silicon (Si), and upper and lower cushion is non-electro-optic polymer material; Sandwich layer is an electro-optic polymer material; Upper limiting layer is an air, and ground electrode places between substrate and the bottom breaker, and two surface electrodes place on the cushion and by upper limiting layer and cover;
NThe rank phase generator comprise be labeled as DC 11, DC 12 ..., DC 1 (
N+ 1) altogether
N+ 1 directional coupler unit, and be labeled as ODL 11, ODL12 ..., ODL 1
NAltogether
NIndividual optical delay line unit;
NThe rank phase generator by DC 11, ODL 11, DC 12, ODL 12 ..., DC 1
N, ODL 1
N, DC 1 (
N+ 1) cascade forms,
NThe input end A1 of rank phase generator, B1 link to each other through curved waveguide with the input end of the upper and lower waveguide of DC 11,
NThe output terminal C1 of rank phase generator, D1 and DC 1 (
NThe output terminal of upper and lower waveguide+1) links to each other through curved waveguide; Each directional coupler unit has independently be coupled spacing and coupled zone length, and it is poor that each optical delay line unit has independent paths;
MThe rank phase generator comprise be labeled as DC 2 (
M+ 1), DC 2
M..., DC 21 altogether
M+ 1 directional coupler unit, and be labeled as ODL 2
M..., ODL 22, ODL 21 altogether
MIndividual optical delay line unit;
MThe rank phase generator by DC 2 (
M+ 1), ODL 2
M, DC 2
M..., ODL 22, DC 22, ODL 21, DC 21 cascades form,
MThe input end C2 of rank phase generator, D2 and DC 2 (
MThe input end of upper and lower waveguide+1) links to each other through curved waveguide,
MThe output terminals A 2 of rank phase generator, B2 link to each other through curved waveguide with the output terminal of the upper and lower waveguide of DC 21; Each directional coupler unit has independently be coupled spacing and coupled zone length, and it is poor that each optical delay line unit has independent paths;
NRank,
MThe waveguide in rank phase generator, waveguide bonding pad 1, waveguide bonding pad 2, input waveguide district and output waveguide district is a monometallic cladding type single mode waveguide; Substrate is silicon (Si); Upper and lower cushion is non-electro-optic polymer material; Sandwich layer is an electro-optic polymer material, and upper limiting layer is an air, and ground electrode places between substrate and the bottom breaker.
2. new molded breadth spectrum MZI electrooptical switching according to claim 1 is characterized in that:
NRank or
MTop set's waveguide length of each optical delay line unit of rank phase generator is during greater than the inferior division waveguide length, and the path difference of optical delay line unit is greater than 0; Top set's waveguide length of each optical delay line unit of phase generator is during less than the inferior division waveguide length, and the path difference of optical delay line unit is less than 0;
The exponent number of two phase generators
NWith
MNumerical value satisfy
N+
M>0, and be integer;
NWith
MWhen equating, device is a symmetrical structure,
NWith
MWhen unequal, device is a unsymmetric structure.
3. a new molded breadth spectrum MZI electrooptical switching is characterized in that: adopt a kind of novel non-linearity lowest mean square optimized Algorithm right
NRank,
MThe rank phase generator is done structure optimization, and the detailed process of this algorithm is: the scope of given device operation wavelength, and in this scope, calculate the scope of MZI electric light district phase shift drift; Derive
NThe rank phase generator with
MThe amplitude transfer function of rank phase generator, and calculate total phase shift expression formula of the two generation; Utilize approximating method, the non-structural parameters in total phase shift expression formula are changed into the function of phase generator structural parameters and operation wavelength; The initial value of given each structural parameters, alternation step-length and accuracy value are utilized non-linear lowest mean square optimized Algorithm, and search makes
NThe rank phase generator with
MTotal phase shift of rank phase generator and the minimum values of the structural parameters of MZI phase shift drift square error; Judge the validity of parameter value and the precision of square error; As do not meet the demands, then change initial parameter value, search again, otherwise, withdraw from the optimization cyclic process, obtain
NRank,
MRank phase generator parameters optimization value.
4. new molded breadth spectrum MZI electrooptical switching according to claim 1 is characterized in that:
The waveguide shapes in waveguide bonding pad 1, waveguide bonding pad 2, input waveguide district and output waveguide district is a curved waveguide;
The spacing of two waveguide output terminals is greater than the single-mode fiber diameter in input waveguide district, the output waveguide district;
The input end in input waveguide district, output waveguide cross-sectional dimensions difference, the slow transition of output waveguide cross-sectional dimensions are the sectional dimension of input end input single-mode fiber;
The input end in output waveguide district, output waveguide cross-sectional dimensions difference, the slow transition of input end waveguide cross-sectional dimensions are the sectional dimension of output output single-mode fiber.
5. new molded breadth spectrum MZI electrooptical switching according to claim 1, it is characterized in that: the impressed voltage of MZI electric light district two surface electrodes is respectively
U 1With
U 2, in working order down, the two surface electrode voltages in MZI electric light district
U 1With
U 2For adding driving voltage and polarity is opposite, form and recommend driving; Under polarized state, the two surface electrode voltages in MZI electric light district
U 1With
U 2Be and be polarizing voltage, the polarization of formation homophase.
6. new molded breadth spectrum MZI electrooptical switching according to claim 1 is characterized in that: be applied to the voltage on MZI electric light district two surface electrodes
U 1With
U 2During for the ON of-state voltage, the luminous power of delivery outlet reaches maximal value; Be applied to the voltage on MZI electric light district two surface electrodes
U 1With
U 2During for the OFF of-state voltage, the luminous power of delivery outlet reaches minimum value.
7. according to claim 1 and 6 described new molded breadth spectrum MZI electrooptical switchinges, it is characterized in that: the optical wavelength tuning range that is input to MZI electrooptical switching input port is 1400 ~ 1700 nm, can cover S, C, the whole wave bands of L; In operation wavelength is the tuning range of 1400 ~ 1700 nm, under ON or OFF state, MZI electric light district,
NThe rank phase generator,
MThe phase shift that the rank phase generator produces all is that wavelength is relevant, and total phase shift of three is constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100235978A CN102608776A (en) | 2011-01-21 | 2011-01-21 | Novel wide-spectrum MZI (Mach Zehnder interferometer) electro-optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100235978A CN102608776A (en) | 2011-01-21 | 2011-01-21 | Novel wide-spectrum MZI (Mach Zehnder interferometer) electro-optical switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102608776A true CN102608776A (en) | 2012-07-25 |
Family
ID=46526257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100235978A Pending CN102608776A (en) | 2011-01-21 | 2011-01-21 | Novel wide-spectrum MZI (Mach Zehnder interferometer) electro-optical switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102608776A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103278889A (en) * | 2013-06-21 | 2013-09-04 | 上海交通大学 | Feedforward type variable optical delay line |
| CN104749518A (en) * | 2014-12-18 | 2015-07-01 | 吉林大学 | Device and method for measuring linearity of waveguide electro-optic switch array |
| CN106452588A (en) * | 2015-08-11 | 2017-02-22 | 清华大学 | Broadband-tunable photon time delayer and time delay monitoring method thereof |
| CN107861194A (en) * | 2017-11-03 | 2018-03-30 | 电子科技大学 | A kind of N channel M positions integrated light guide tunable delay line |
| CN108474972A (en) * | 2016-01-12 | 2018-08-31 | 福莱通有限公司 | Optical device |
| CN111897173A (en) * | 2020-08-03 | 2020-11-06 | 浙江大学 | Low-loss low-random phase error 2 x 2 optical switch and N x N optical switch array |
| CN113050222A (en) * | 2021-04-16 | 2021-06-29 | 吉林大学 | Reconfigurable polymer mode converter for mode division multiplexing system |
-
2011
- 2011-01-21 CN CN2011100235978A patent/CN102608776A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| CHUAN-TAO ZHENG ET AL: "Design of wide-spectrum polymer Mach-Zehnder interferometer electro-optic switches using two symmetric N-th order phase-generating couplers", 《OPTICS COMMUNICATIONS》 * |
| 郑传涛: "硅基聚合物电光开关的优化设计与分析模拟", 《中国博士学位论文数据库信息科技辑》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103278889A (en) * | 2013-06-21 | 2013-09-04 | 上海交通大学 | Feedforward type variable optical delay line |
| CN104749518A (en) * | 2014-12-18 | 2015-07-01 | 吉林大学 | Device and method for measuring linearity of waveguide electro-optic switch array |
| CN104749518B (en) * | 2014-12-18 | 2017-09-29 | 吉林大学 | A kind of linearity measure device and method of waveguide electro-optic switch arrays |
| CN106452588A (en) * | 2015-08-11 | 2017-02-22 | 清华大学 | Broadband-tunable photon time delayer and time delay monitoring method thereof |
| CN106452588B (en) * | 2015-08-11 | 2018-11-23 | 清华大学 | A kind of wideband adjustable photon delayer and its delay monitoring method |
| CN108474972A (en) * | 2016-01-12 | 2018-08-31 | 福莱通有限公司 | Optical device |
| CN108474972B (en) * | 2016-01-12 | 2021-11-16 | 福莱通有限公司 | Optical device |
| CN107861194A (en) * | 2017-11-03 | 2018-03-30 | 电子科技大学 | A kind of N channel M positions integrated light guide tunable delay line |
| CN107861194B (en) * | 2017-11-03 | 2020-06-09 | 电子科技大学 | N-channel M-bit integrated optical waveguide tunable delay line |
| CN111897173A (en) * | 2020-08-03 | 2020-11-06 | 浙江大学 | Low-loss low-random phase error 2 x 2 optical switch and N x N optical switch array |
| CN113050222A (en) * | 2021-04-16 | 2021-06-29 | 吉林大学 | Reconfigurable polymer mode converter for mode division multiplexing system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102608776A (en) | Novel wide-spectrum MZI (Mach Zehnder interferometer) electro-optical switch | |
| CN100397230C (en) | Method and apparatus for modulating an optical beam with a ring resonator having a charge modulated region | |
| US7085443B1 (en) | Doping profiles in PN diode optical modulators | |
| US5970186A (en) | Hybrid digital electro-optic switch | |
| US7116853B2 (en) | PN diode optical modulators fabricated in rib waveguides | |
| US7136544B1 (en) | PN diode optical modulators fabricated in strip loaded waveguides | |
| US6865314B1 (en) | Tunable optical wavelength filters and multi-level optical integrated circuits | |
| Voges et al. | Integrated-optic devices on LiNbO 3 for optical communication | |
| CN102868090B (en) | Laser device with tunable outer cavity and flexible wavelength grid tuning function | |
| CN107735707A (en) | For tuning the Optical devices and method of optical signalling | |
| CA2405075A1 (en) | Optical modulator with pre-determined frequency chirp | |
| CN108693602B (en) | Silicon nitride three-dimensional integrated multi-microcavity resonant filter device and preparation method thereof | |
| CN105629523A (en) | Lithium niobate based tunable optical filter and application thereof | |
| US20070212012A1 (en) | Planar Lightwave Circuit Type Variable Optical Attenuator | |
| Wu et al. | Reconfigurable optical add-drop multiplexer based on thermally tunable micro-ring resonators | |
| CN110456528A (en) | A kind of plasma electric optical modulator of twin-guide manifold type | |
| CN101035391A (en) | 1xN dynamic light wavelength router based on the micro-loop | |
| Jeong et al. | 1× 4 channel Si-nanowire microring-assisted multiple delayline-based optical MUX/DeMUX | |
| CN102636888A (en) | Electro-optic tuning multi-wavelength FIR (Finite Impulse Response) filter and all-level voltage determining method | |
| US20030147574A1 (en) | Travelling-wave electroabsorption modulator | |
| CN106054410A (en) | Silicon-based micro-ring-light router based on black phosphorus | |
| US11119272B2 (en) | Hybrid silicon-transparent conductive oxide devices | |
| CN202133846U (en) | Tunable optical power splitter based on two-dimensional liquid crystal photonic crystal | |
| US11489611B2 (en) | Reconfigurable optical add-drop multiplexer with low power consumption | |
| Yuan et al. | Reconfigurable Optical Directed Logic Circuits Based on Mode Division Multiplexing Technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120725 |