WO2012103823A2 - Déphaseur, coupleur et procédés permettant leur production - Google Patents

Déphaseur, coupleur et procédés permettant leur production Download PDF

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Publication number
WO2012103823A2
WO2012103823A2 PCT/CN2012/072298 CN2012072298W WO2012103823A2 WO 2012103823 A2 WO2012103823 A2 WO 2012103823A2 CN 2012072298 W CN2012072298 W CN 2012072298W WO 2012103823 A2 WO2012103823 A2 WO 2012103823A2
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WO
WIPO (PCT)
Prior art keywords
layer
electro
waveguide
polymer material
cathode metal
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Application number
PCT/CN2012/072298
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English (en)
Chinese (zh)
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WO2012103823A3 (fr
Inventor
许牧
高磊
苏翼凯
李菲
Original Assignee
华为技术有限公司
上海交通大学
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Application filed by 华为技术有限公司, 上海交通大学 filed Critical 华为技术有限公司
Priority to CN201280000484.9A priority Critical patent/CN102763264B/zh
Priority to PCT/CN2012/072298 priority patent/WO2012103823A2/fr
Publication of WO2012103823A2 publication Critical patent/WO2012103823A2/fr
Publication of WO2012103823A3 publication Critical patent/WO2012103823A3/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on electro-optical organic material
    • G02F1/065—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on electro-optical organic material in an optical waveguide structure

Definitions

  • the present invention relates to the field of integrated silicon-based photonics, and more particularly to a phase shifter and coupler and a method of fabricating the same. Background technique
  • silicon-based phase shifter is the core device for realizing silicon-based high-speed modulation. It is of great significance in the field of integrated silicon-based photonics. Its research work has become academia and industry. hot spot.
  • the carrier dispersion effect is usually used to achieve the purpose of phase shifting due to the lack of linear electro-optic effect.
  • the change of refractive index mainly depends on the change of free carrier concentration.
  • the ordinary silicon-based waveguide has limited limitation on the optical field, and the modulation efficiency is not High, typically requiring waveguides of tens of microns to a few millimeters in length to phase shift, greatly limits the high density integration of silicon-based devices.
  • the free charge carriers dispersion (FCD) and free charge carrier absorption (FCA) effects associated with changes in carrier concentration cause delays in the response time of electro-optical conversion. The increase in the rate of the silicon based phase shifter is greatly limited.
  • Embodiments of the present invention provide a phase shifter and a coupler and a method of fabricating the same,
  • the gap between the metal upper electrode and the doped silicon dielectric fills the structure of the material having an electrooptic effect, which further miniaturizes the device and reduces the adverse effects of the carrier effect, thereby increasing the response speed of the device.
  • a phase shifter including:
  • the top silicon layer includes two isolation trenches, the two isolation trenches being separated by a common trench wall between the two isolation trenches, the common trench wall a waveguide, and the height of the waveguide is higher than an outer groove wall of the two isolation grooves;
  • first cathode metal layer and a second cathode metal layer respectively covering the two outer groove walls of the two isolation grooves
  • a coupler is provided, the output of the coupler being coincident with an input of the phase shifter, the coupler comprising:
  • the top silicon layer includes two isolation trenches, the two isolation trenches being separated by a common trench wall between the two isolation trenches, the common trench wall a coupler waveguide, wherein a height of the coupler waveguide is higher than an outer groove wall of the two isolation trenches, and a width of the input side of the coupler waveguide is greater than a width of the output side;
  • first cathode metal layer and a second cathode metal layer respectively covering the two outer groove walls of the two isolation grooves
  • Electro-optic polymer material layer Covering the first cathode metal layer, the second cathode metal layer, and the top silicon layer Electro-optic polymer material layer;
  • a method of fabricating a phase shifter comprising:
  • Pre-polarizing the electro-optic polymer material layer for a predetermined length of time by applying the first electric field strength to the polarized metal electrode as an anode and the first cathode metal layer and the second cathode metal layer as a cathode;
  • a method of manufacturing a coupler including:
  • Pre-polarizing the electro-optic polymer material layer for a predetermined length of time by applying the first electric field strength to the polarized metal electrode as an anode and the first cathode metal layer and the second cathode metal layer as a cathode;
  • Embodiments of the present invention provide a phase shifter and a coupler and a method of fabricating the same, which employ a structure in which a gap between a metal upper electrode and a doped silicon dielectric fills a material having an electrooptic effect, thereby making the device more compact and at the same time reducing The adverse effects of the carrier effect increase the response speed of the device.
  • FIG. 1 is a schematic structural diagram of an end surface of a phase shifter according to an embodiment of the present invention
  • phase shifter A-A of FIG. 1 is a cross-sectional structural view of the phase shifter A-A of FIG. 1 according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of an end face surface of an output end of a coupler according to an embodiment of the present invention
  • 4 is a cross-sectional structural view of the coupler BB surface shown in FIG. 3 according to an embodiment of the present invention
  • FIG. 5 is a schematic structural diagram of an end surface of a phase shifter according to another embodiment of the present invention
  • FIG. 6 is a schematic cross-sectional structural view of a phase shifter A-A of FIG. 5 according to an embodiment of the present invention
  • FIG. 7 is a schematic structural diagram of an end surface of an output end of a coupler according to another embodiment of the present invention.
  • FIG. 8 is a schematic cross-sectional view showing the B-B surface of the coupler shown in FIG.
  • FIG. 9 is a schematic flow chart of a method for manufacturing a phase shifter according to an embodiment of the present invention.
  • 10a to 10g are schematic diagrams showing a manufacturing process of a phase shifter according to an embodiment of the present invention.
  • FIG. 11 is a schematic flow chart of a method for manufacturing a coupler according to an embodiment of the present invention.
  • an embodiment of the present invention provides a phase shifter, including: an underlying silicon layer 1a and an insulating layer 2a covering the underlying silicon layer 1a; a top silicon layer covering the insulating layer 2a, and a top silicon layer including two An isolation groove 3a, the two isolation grooves 3a are separated by a common groove wall between the two isolation grooves, the common groove wall is the waveguide 4a, and the height of the waveguide 4a is higher than the outer groove walls of the two isolation grooves 3a; a first cathode metal layer 5a and a second cathode metal layer 6a covering the two outer groove walls of the two isolation grooves; and an electro-optical polymer material layer covering the first cathode metal layer 5a, the second cathode metal layer 6a and the top silicon layer 7a; an upper electrode 8a formed above the electro-optic polymer material layer 7a above the waveguide 4a, upper layer A slit filled with the electro-optic polymer material layer 7a
  • the phase shifter provided by the embodiment of the present invention adopts a structure in which a gap between a metal upper electrode and a doped silicon dielectric fills a material having an electrooptic effect, thereby making the device more compact and reducing the carrier effect.
  • the adverse effects increase the response speed of the device.
  • the upper electrode 8a is wider than the width of the waveguide 4a; the widths of the two isolation grooves are equal, and the thicknesses of the bottoms of the two isolation grooves are equal; the shape of the waveguide 4a is a rectangular parallelepiped.
  • the structure of the phase shifter provided by the embodiment of the present invention strengthens the limiting effect of the slit of the electro-optic polymer material on the light field due to the characteristics of the surface plasmon polarization mode, and controls the narrowness by changing the voltage on the upper electrode and the waveguide.
  • the refractive index of the electro-optic polymer material in the slit further adjusts the phase of the light field, and finally achieves the purpose of phase shifting.
  • an embodiment of the present invention provides a coupler, the output end of which is matched with the input end of the phase shifter provided in FIG. 1, and the coupler includes: a bottom silicon layer lb and An insulating layer 2b covering the underlying silicon layer lb;
  • the top silicon layer comprises two isolation trenches 3b, the two isolation trenches 3b being separated by a common trench wall between the two isolation trenches 3b, the common trench walls being the coupler waveguides 4b, wherein The height of the coupler waveguide 4b is higher than the outer groove walls of the two isolation grooves 3b, and the width of the input side of the coupler waveguide 4b is larger than the width of the output side;
  • first cathode metal layer 5b and a second cathode metal layer 6b covering the two outer groove walls of the two isolation grooves, respectively;
  • An electro-optic polymer material layer 7b covering the first cathode metal layer 5b, the second cathode metal layer 6b and the top silicon layer;
  • a slit formed by the electro-optic polymer material layer 7b is formed between the upper electrode 8b, the upper electrode 8b and the coupler waveguide 4b waveguide formed above the electro-optic polymer material layer 7b above the coupler waveguide 4b;
  • the upper protective layer 9b covering the upper electrode 8b and the electro-optic polymer material layer 7b. Further, the upper electrode 8b is wider than the widest width of the coupler waveguide 7b; two isolations The widths of the slots are equal and the thicknesses of the bottoms of the two isolation slots are equal.
  • the coupler provided by the embodiment of the present invention is limited in shape and structure to be applied only to the redirector provided by the present invention, and the phase shifter provided by the present invention provides input light waves. Since the output of the coupler coincides with the input of the phase shifter and the layer structure is the same, the upper electrode of the coupler and the coupler waveguide can provide the same electric field strength as in the phase shifter slit, so when the light wave enters the coupler The coupler also plays a phase shifting effect on the light field.
  • the length of the coupler is relatively short compared to the phase shifter, the light wave enters the design of the phase shifter through the coupler provided by the embodiment of the present invention, to a certain extent
  • the effect of phase shifting is enhanced, that is, a good phase shifting effect can be achieved when a lower voltage change amount occurs, thereby reducing energy consumption.
  • the preferred embodiment of the phase shifter has a width of 1.5 micrometers and a thickness of 200 nanometers;
  • the isolation trenches are all 2 microns wide and the bottom of the isolation trenches are 50 nanometers thick.
  • the height of the waveguide is 150 nm, the width of the waveguide is 400 nm, the length of the phase shifter is 10 ⁇ m, and the height of the slit is 20 nm.
  • ⁇ 2 a can obtain the change of the phase with the voltage.
  • the wavelength of the light wave introduced into the phase shifter is electro-optic polymerization.
  • the second-order nonlinear coefficient of the material is the length of the phase shifter, which is the height of the polymer slit, ⁇ is the percentage of the light field energy in the slit, and S is the ratio of the phase velocity to the group velocity in the waveguide.
  • ⁇ is the amount of change in voltage value, ⁇ ⁇ phase change amount.
  • an embodiment of the present invention provides an example of a coupler.
  • the upper electrode of the coupler has a width of 1.5 ⁇ m and a thickness of 200 nm; both isolation slots have widths at the input end. 1.975 micron, 2 microns at the output, the thickness of the bottom of both isolation trenches is 50 nanometers; the height of the coupler waveguide is 150 nanometers, the width of the coupler waveguide at the input is 450 nanometers, the width at the output It is 400 nm; the coupler has a length of 500 nm and the slit has a height of 20 nm.
  • phase shifter and the coupler are given here, as long as those skilled in the art can easily think of the change or replacement of the parameters within the scope of the technology disclosed in the present invention, which should be covered by the scope of the present invention. .
  • the coupler provided by the embodiment of the present invention is limited in shape and structure to be applied only to the redirector provided by the present invention, and the phase shifter provided by the present invention provides input light waves.
  • a method for manufacturing a phase shifter according to an embodiment of the present invention includes the following steps in conjunction with FIGS. 10a-10g:
  • Two isolation trenches separated by an intermediate common trench wall are formed by etching on the top silicon layer of the silicon wafer having the underlying silicon layer, the intermediate insulating layer, and the top silicon layer.
  • the silicon wafer having the underlying silicon layer, the intermediate insulating layer and the top silicon layer is also referred to as an SOI (Silicon-On-Insulator) silicon wafer, wherein the intermediate insulating layer is a silicon oxide material, as shown in FIG. 10a.
  • SOI Silicon-On-Insulator
  • two isolation trenches separated by a central common trench wall are formed by an etch process.
  • S102a doping a low concentration N-type carrier to the intermediate common trench wall to form a waveguide.
  • S 103 a Doping a high concentration of N-type carriers to the bottom of the two isolation trenches and the two outer trench walls to form a waveguide cathode.
  • steps S 102 and S 103 shown in Figure 10b, the intermediate groove wall common low doping concentration N-type carriers, 10 1 6 ⁇ 10 1 8 cm_ 3, the waveguide is formed; two isolation trenches The bottom and the two outer groove walls are doped with a high concentration of N-type carriers, and the concentration is preferably
  • a first cathode metal layer and a second cathode metal layer may be formed on the outer groove walls of the two isolation trenches by evaporation and lift-off methods, wherein the first cathode metal layer and the second cathode metal layer In the case of silver or gold, the first cathode metal layer and the second cathode metal layer are electrically conductive and simultaneously serve as cathode electrodes of the waveguide when energized.
  • electro-optic polymer material layer covering the first cathode metal layer, the second cathode metal layer, and the top silicon layer.
  • a layer of electro-optic polymer material is prepared by spin coating, wherein the electro-optic polymer material layer is AJLS 103 cross-linked with poly(mercapto acrylate) PMMA, and optionally, the refractive index is 1.63.
  • the nonlinear coefficient is 100 ⁇ 200pm/V.
  • the molecular formula of AJLS 103 is as shown in the following formula 1:
  • a first protective layer is also formed by spin coating, the first protective layer being a silicon dioxide material; a polarized metal electrode is formed on the first protective layer by evaporation.
  • the first electric field intensity used in the pre-polarization process is 100 V/um, and the predetermined duration is 10 min.
  • the polarized metal electrode and the first protective layer may be directly peeled off.
  • S 1 10a forming an upper electrode on the layer of electro-optic polymer material above the waveguide.
  • an upper electrode is formed on the electro-optic polymer material layer by evaporation and lift-off.
  • S l l l a forming a second protective layer covering the upper electrode and the electro-optic polymer material layer.
  • a direct spin-on silica material is used as a second protective layer to cover the upper electrode and electro-optic polymer material layers.
  • the phase shifter manufacturing method provided by the embodiment of the present invention adopts a structure in which a gap between a metal upper electrode and a doped silicon dielectric material fills a material having an electrooptic effect, thereby making the device more compact and reducing the carrier effect band.
  • the adverse effects of the device increase the response speed of the device.
  • phase change formula of the phase shifter is: ⁇ 2 a where is the wavelength, "is the refractive index of the electro-optic material, the second-order nonlinear coefficient of the polymer, and z is the length of the phase shifter, which is the polymerization.
  • the thickness of the object slit ⁇ is the percentage of the light field energy in the slit, which is the ratio of the phase velocity to the group velocity in the waveguide, ⁇ is the voltage value change amount, ⁇ ⁇ phase change amount.
  • a method for manufacturing a coupler according to an embodiment of the present invention includes the following steps:
  • the silicon wafer having the underlying silicon layer, the intermediate insulating layer, and the top silicon layer is also referred to as an SOI (Silicon-On-Insulator) silicon wafer, wherein the intermediate insulating layer is a silicon oxide material.
  • SOI Silicon-On-Insulator
  • steps S 102 and S 103 of low concentration of 10 16 ⁇ 10 18 cm_ 3 a high concentration of S104b, forming a first cathode metal layer and a second cathode metal layer on the outer groove walls of the two isolation trenches.
  • the first cathode metal layer and the second cathode metal layer may be formed on the outer groove walls of the two isolation trenches by evaporation and lift-off methods, wherein the first cathode metal layer and the second cathode metal layer are silver or gold, When energized, the first cathode metal layer and the second cathode metal layer are conductive and simultaneously serve as cathode electrodes for the coupler waveguide.
  • a layer of electro-optic polymer material is prepared by spin coating, wherein the electro-optic polymer material layer is AJLS 103 which is cross-linked with polyacrylic acid decyl acrylate PMMA, optionally, having a refractive index of 1.63, a nonlinear coefficient It is 100 ⁇ 200pm/V.
  • the first protective layer can also be formed by spin coating, which is a silicon dioxide material.
  • a polarized metal electrode is formed on the first protective layer by evaporation.
  • the first electric field intensity used in the pre-polarization process is 100 V/um, and the predetermined duration is 10 min.
  • the polarized metal electrode and the first protective layer may be directly peeled off.
  • An upper electrode is formed on the electro-optic polymer material layer by evaporation and lift-off.
  • the coupler provided by the embodiment of the present invention limits the shape and structure to the direction shifter provided by the present invention, and provides the input light wave for the phase shifter provided by the present invention.
  • the phase shifter and the coupler provided by the embodiments of the present invention can also be integrally prepared, that is, the coupler provided by the present invention can be directly prepared by the present invention, because the processing process of the layers in the manufacturing process and the entire preparation steps are the same.
  • the input of the phase shifter further enhances the precision of the device.
  • the upper electrode of the coupler and the coupler waveguide can provide the same electric field strength as in the phase shifter slit, so the light wave enters the coupler.
  • the time coupler can also achieve the phase shifting effect on the light field.
  • the length of the coupler is relatively short compared to the phase shifter, the light wave enters the design of the phase shifter through the coupler provided by the embodiment of the present invention, to a certain extent.
  • the effect of phase shifting can be enhanced, that is, a good phase shifting effect can be achieved when a lower voltage change amount occurs, thereby reducing energy consumption.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

Les modes de réalisation de la présente invention, relative au domaine de la photonique, se rapportent à un déphaseur, à un coupleur et à des procédés permettant leur production, les procédés permettant de réduire les dégâts optiques, d'améliorer le taux d'utilisation de l'énergie du champ lumineux et d'améliorer la vitesse de réponse du dispositif. Le déphaseur comprend : une couche de silicium de base et une couche isolée qui recouvre la couche de silicium de base ; une couche de silicium supérieure qui recouvre la couche isolée, la couche de silicium supérieure présentant deux rainures d'isolement qui sont séparées l'une de l'autre par une paroi de rainure commune, la paroi de rainure commune étant un guide d'ondes et la hauteur du guide d'ondes étant plus importante que celle des parois de rainure extérieures des deux rainures d'isolement ; une première couche métallique de cathode et une seconde couche métallique de cathode recouvrant deux parois de rainure extérieures des deux rainures d'isolement, respectivement ; une couche de matériau polymère électro-optique recouvrant la première couche métallique de cathode, la seconde couche métallique de cathode et la couche de silicium supérieure ; une électrode supérieure formée sur la couche de matériau polymère électro-optique, et des fentes formées entre l'électrode supérieure et le guide d'ondes et remplies par la couche de matériau polymère électro-optique ; une seconde couche de protection recouvrant l'électrode supérieure et la couche de matériau polymère électro-optique. Les modes de réalisation de la présente invention sont appliqués au déphasage électro-optique.
PCT/CN2012/072298 2012-03-14 2012-03-14 Déphaseur, coupleur et procédés permettant leur production WO2012103823A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280000484.9A CN102763264B (zh) 2012-03-14 2012-03-14 一种移相器和耦合器及其制造方法
PCT/CN2012/072298 WO2012103823A2 (fr) 2012-03-14 2012-03-14 Déphaseur, coupleur et procédés permettant leur production

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Application Number Priority Date Filing Date Title
PCT/CN2012/072298 WO2012103823A2 (fr) 2012-03-14 2012-03-14 Déphaseur, coupleur et procédés permettant leur production

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WO2012103823A3 WO2012103823A3 (fr) 2013-02-28

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EP2884331A1 (fr) * 2013-12-10 2015-06-17 Institute of Solid State Physics, University of Latvia Modulateur électro-optique et son procédé de fabrication

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US8923660B2 (en) * 2013-05-24 2014-12-30 Futurewei Technologies, Inc. System and method for an optical phase shifter
CN103698847B (zh) * 2013-12-27 2016-01-20 南京邮电大学 一种匹配性增强长链分子型聚合物光波导双折射性的方法
CN109581696A (zh) * 2017-09-28 2019-04-05 北京万集科技股份有限公司 一种波导移相器及其制备方法
CN111458909B (zh) * 2020-04-22 2023-12-26 中国计量大学 一种基于等离子体结构与有机材料的硅基复合波导的电光调制器
CN115053172A (zh) * 2020-11-02 2022-09-13 深圳市速腾聚创科技有限公司 一种移相器、光相控阵以及光相控阵的制备方法
CN112666726B (zh) * 2020-12-23 2024-02-06 联合微电子中心有限责任公司 一种热光移相器及其制备方法
CN116953960A (zh) * 2022-04-16 2023-10-27 华为技术有限公司 移相器、电光器件、光通信系统及移相器的制造方法
WO2023221146A1 (fr) * 2022-05-20 2023-11-23 北京小米移动软件有限公司 Unité de déplacement de phase, module d'antenne et terminal mobile
CN117850075A (zh) * 2022-09-30 2024-04-09 华为技术有限公司 电光聚合物器件、光器件以及光集成电路

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CN102763264B (zh) 2014-04-30
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