CN101006382A - High-speed semiconductor waveguide phase-shifter - Google Patents
High-speed semiconductor waveguide phase-shifter Download PDFInfo
- Publication number
- CN101006382A CN101006382A CN 200580028041 CN200580028041A CN101006382A CN 101006382 A CN101006382 A CN 101006382A CN 200580028041 CN200580028041 CN 200580028041 CN 200580028041 A CN200580028041 A CN 200580028041A CN 101006382 A CN101006382 A CN 101006382A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- doped
- doped region
- zone
- optical mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
An optical phase shifter (100) comprises a semiconductor waveguide (105) includes a core region (116) and a doped region (115a, 115b) containing free charges (electrons or holes), which can be steered into or removed from the wave guide, where an optical beam (150) propagates. A semiconductor structure (PN junction 112, 114) allows the control of the amount of free charges in the doped region, which constitutes a potential well. When the well is filled, the charges speed the beam propagation, introducing a phase change. When the well is emptied, (under application of a reverse bias to the junction 112, 114), the beam propagates with extra delay. The phase shifter allows very high speed modulation of the beam using low voltage and low power electronics. The device can be created using standard silicon processing techniques, and integrated with other optical components such as splitters and combiners to create amplitude modulators, attenuators and other optical devices.
Description
The cross reference of related application
The application based on and require the right of priority of following application: U.S. Provisional Patent Application No.60/601,723, it is submitted and incorporate its full content into as a reference at this on August 16th, 2004; And Application No. No.11/161,744, it is submitted and incorporate its full content into as a reference at this on August 15th, 2005.
Technical field
The present invention relates to field of high-speed optical communications, and specifically, relate to the phase shifter that can change the phase place of light signal according to electric signal.
Background technology
Often by the intensity of light beam is modulated to the digital coding in the optical communication.Can realize this amplitude modulation by the duplicating of light beam that postpones in conjunction with selectivity with itself.When duplicating of light beam is subjected to the phase delay of π radian and combines with original beam, destructive interference takes place, produce minimum output intensity.When duplicating of light beam do not stood phase delay, constructive interference takes place, produce maximum output intensity.Can utilize to be subjected to the optical phase shifter device of electric signal control optionally to postpone light beam according to data stream, thus according to these data to the amplitude modulation of output light.
Developed the intensity that various devices come modulated beam of light.Lithium niobate (LiNbO
3) modulator can be fast and have rational voltage requirements, yet they are polarization and be unsuitable for drive electronics and optics integrated separately.Integrated doped silica waveguides is also referred to as the silicon optical bench components, and polarization independence and high integration are provided, yet their the highest switch speed is only in the 1MHz scope.Semiconductor modulator (InP or GaAs) can have the 40GHz bandwidth; Yet, utilize this technology to be not easy to realize the polarization independence of hyperchannel and other parts and integrated in a large number.The silicon modulator that is made of the silicon waveguide that embeds in the silica allows integrated in a large number; Yet design so far has the quite low phase change of per unit voltage and length, needs high operating voltage or big device.Many existing designs also consume the static power of height, P-I-N device for example, and it has the electric current that continues to flow through device in order to keep stable carrier concentration.
Summary of the invention
In one exemplary embodiment according to device of the present invention, semiconductor waveguide comprises at least one zone in beam path, it can be under the control of electric signal be filled by the free charge charge carrier or depleted free charge charge carrier stands to postpone optionally to make light beam.When this at least one zone had been filled charge carrier, these charge carriers quickened beam propagation, make light beam be subjected to the minimum delay thus.Yet when this at least one zone does not have the free charge charge carrier, beam propagation get slower and therefore with respect to the condition in minimum delay by phase shift.One or more parts by the modulation doping waveguide form this at least one zone.When reverse biased is applied near this regional PN junction, this at least one zone is depleted free charge charge carrier.The removal of reverse biased allows the free charge charge carrier to refill this zone.Can select the free charge charge carrier is electronics or hole.
Advantageously, according to phase shifter of the present invention can be at full speed, low optical loss and low-voltage and power consumption come the phase place at wide region internal modulation light beam.Further advantageously, can easily be designed according to device of the present invention so that with the light beam of identical or different rate modulation cross polarization.Device of the present invention is suitable for for example waveguide of other parts, splitter, combiner and integrated electronic circuit integrated, and can utilize practical, reliable and cost-effective manufacture method to make.
Description of drawings
Fig. 1 is the cross section according to the one exemplary embodiment of phase shifter of the present invention.
Fig. 2 is the planimetric map of the phase shifter of Fig. 1.
Fig. 3 A and 3B are illustrated in the analog result of the electrostatic potential of the core of explanation leap exemplary device of the present invention under the situation that does not apply and apply reverse biased respectively; And Fig. 3 C is the curve map that the operating speed of the exemplary phase shifter of being predicted by its simulation of the present invention is shown.
Fig. 4 A is to the exemplary processes flow process of the schematically illustrated manufacturing of 4D according to exemplary phase shifter of the present invention.
Fig. 5 illustrates the cross section according to another one exemplary embodiment of phase shifter of the present invention.
Fig. 6 A illustrates the other one exemplary embodiment that has the phase shifter of a plurality of depletion well configurations according to of the present invention to 6C.
Fig. 7 illustrates the cross section according to another one exemplary embodiment of phase shifter of the present invention.
Fig. 8 is a synoptic diagram of incorporating the exemplary modulator of phase shifter and optionally zero phase shifter into.
Embodiment
In the cross section of Fig. 1 and shown in the planimetric map of Fig. 2 according to the one exemplary embodiment of phase shifting equipment 100 of the present invention.Shown exemplary device is at silica (SiO
2) cushion 120 on use silicon rib waveguide 110.Rib 105 is formed on the upper surface of silicon rib waveguide 110.
As shown in figs. 1 and 2, silicon rib waveguide 110 has around heavily doped perimeter 112 of the P type of the heavily doped interior zone 114 of N type and base 113.The heavily doped perimeter 112 of this P type extends downwardly into the heavily doped base 113 of P type, and the heavily doped interior zone 114 of N type partly extends in the silicon waveguide 110 downwards.Provide for zone 112 and 114 and contact to allow the leap there to apply voltage, as described in more detail below.For preventing leakage current, be in direct contact with one another on the contrary with making, heavily doped region 112 and 114 preferably is separated by little gap.
As shown in fig. 1, N type heavily doped region 114 is around doped region 115a, 115b, and its core space 116 that generally is positioned under the rib 105 separates.Shown in one exemplary embodiment in, regional 115a, 115b are doped to moderate concentration by the P type, as described in more detail below.Different with heavily doped region 112,114, regional 115a, 115b are not provided with to electrically contact and therefore do not make external electric and contact.N type heavily doped region 114, P type medium-doped zone 115a, 115b and core space 116 are positioned on the zone 118.Rib 105, core space 116 and zone 118 preferably undope or mix very slightly.As shown in Figure 2, the cross section in the path of light beam is also referred to as " optical mode " 150, mainly is limited in regional 115a, 115b and 116, and might partly extend up in the rib 105 and extend downwardly into the zone 118 in.Optical mode 150 also can limited extent ground part extend in the heavily doped region.The shape of optical mode 150 is mainly determined by the shape of waveguide, comprises the width and the height of rib 105.Yet the speed that optical mode is advanced will change along with its advance concentration of the free carrier in the zone of being passed through.
PN junction between P and n- quadrant 112 and 114 allows charge carrier to be removed or adds regional 115a and the 115b that is arranged in optical mode 150 at least in part to.The potential well of assembling the free charge charge carrier is provided at appropriate doped regions 115a, the 115b of any side of core space 116.Do not apply under the situation of reverse biased at the leap PN junction, these potential wells are full of charge carrier, are the hole in this embodiment.As a result, the light beam by device is subjected to minimum delay.When applying reverse biased, promptly N type doped region 114 is in the electromotive force higher than P type doped region 112 and 113, and the charge carrier among regional 115a, the 115b is depleted.As a result, the light beam by device be subjected to bigger delay and therefore with respect to minimum delay condition by phase shift.
The optimum dimension of the various features of the exemplary device of Fig. 1 and 2 will depend on multiple consideration.For example, as discussed below, the width of well area 115a, 115b exhausts the required reverse bias voltage of regions of carriers with influence.In an exemplary embodiment, it is wide that regional 115a, 115b are approximately 0.08 μ m.It is dark that zone 114 and 115a, 115b are approximately 0.3 μ m, and their bottom is approximately 0.7 μ m on silica layer 120.The width of rib 105 is approximately 0.5 μ m and installs 100 length and is approximately 1.0mm.
The optimum distance of well area 115a, 115b and waveguide core is competed the domination of consideration.These traps are more near optical mode 150, and then many more optical mode afterbodys will be overlapping with the heavy doping in zone 114, and will have more absorption loss.Trap is removed far more from core, and they are just more little to the influence of velocity of propagation.In an exemplary embodiment, the edge of each trap 115a, 115b is within the 0.1 μ m at the nearest edge of rib 105, or in the inside or the outside in rib occupy-place zone.It is fully overlapping to allow with optical mode 150 that the vertical height of well area 115a, 115b and heavily doped region 114 is selected as about 0.1-1 μ m, allows to bury the Electrostatic Control that p type layer 113 keeps trap simultaneously.
Except aforesaid size, other consideration in design consideration device of the present invention is the selection of free carrier and their concentration.Although the foregoing description uses the hole as free carrier, can use electronics or hole.At the design electronics is under the situation of free carrier, and the doping polarity of various zones (112,114,115a, b) needs counter-rotating.Under higher doped level, more remarkable by the variation that exhausts caused phase place of trap.Yet increasing doping content will need higher voltage to realize carrier depletion and will increase absorption loss in the waveguide.Under the situation that increases hole concentration, the variation of the variation specific refractivity of absorption is big, and two kinds of parameters increase with approximately identical speed for electronics.
The length of the waveguide that the phase shift of acquisition π radian is required is denoted as L
πThis produces total absorption loss Δ α L
π, and the absorption loss Δ α of each length depends on free carrier concentration.For hole and electronics, in the exemplary value of these parameters of the even free carrier profile of crossing over the waveguide optical mode shown in the table I as free carrier.
Table I
| The hole | Electronics | |||
| Waveguide doping Δ N (cm -3) | Lπ(mm) | ΔαLπ(dB) | Lπ(mm) | ΔαLπ(dB) |
| 10 17 | 2.3 | 0.6 | 8.8 | 3.2 |
| 10 18 | 0.36 | 0.96 | 0.88 | 3.2 |
| 10 19 | 0.058 | 1.5 | 0.088 | 3.2 |
Value listed in table I shows that under the situation of hole as free carrier, the required length of π radian phase change compares under the situation of electronics short, and little under the situation of absorptance at electronics that is produced in this length.In addition, longer length and the lower doping phase change of having improved the hole and absorb between compromise.Can have doping content above the wide region of listed those in the table I (for example 10 according to exemplary device of the present invention
16To 10
19Ion/cm
3).
Utilize suitable reverse bias voltage, for example 40 volts or littler, can easily exhaust potential well with the doped in concentrations profiled shown in top.The regional required voltage that exhausts doping content and be N and width and be W is approximately qNW
2/ 2 ε, wherein ε is that silicon specific inductive capacity and q are electron charge.For example, for 10
18Cm
-3Doping content and the width of 0.08 μ m, required voltage is approximately 5V.
Fig. 3 A and 3B illustrate the potential energy diagram according to the core of exemplary device of the present invention, comprise N type high-doped zone (114) and potential well (115a, 115b).Z-axis be electrostatic potential and two transverse axis be the position left-to-right and before arrive after, and size is unit with the micron.The device the bottom forward and the device top (rib zone) from view, partly hidden.Fig. 3 A illustrates electromotive force when not applying bias voltage.Two N+ districts (114) are corresponding to a left side and right high potential district, and P type high-doped zone (113) is corresponding to the lowest electric potential district.Well region (115a, 115b) corresponding to any side at center, the inside of N+ district (114) and below electromotive force tilt.When applying reverse biased, as shown in Fig. 3 B, the central area raises with respect to the back side, and these inclinations become smooth and the hole is forced to and leaves.
According to phase shifter of the present invention can be very fast.Charge carrier can be at about L/v
SatTime in arrive potential well, wherein v
SatBe that saturated velocity and L are the spacings between regional 115a, 115b and near the heavily doped layer 113.The time of therefore filling or exhausting potential well is approximately several psecs.
The energy of each change action is approximately V Δ Q, and wherein Δ Q is the total electrical charge of removing.Therefore, by be operated in 1GHz down and the power that under the situation of the reverse bias voltage of 5V, has the exemplary device consumption of aforementioned dimensions be approximately 25mW.The feature of device of the present invention is, knot or reverse or not biasing.These are different with the general P-I-N device of finding, it produces sizable electric current thus under conducting state is operated in forward bias.Utilize device of the present invention, all do not have electric current to flow in conducting state (reverse biased) or off state (not having voltage), and only the transition period between two states has electric current to flow.
In Fig. 3 C, figure out the result of the electric analogy of exemplary phase shifter.In simulation, the pulse of reverse biased is applied in to device, and is removed then.The rising edge place that the trace on top is illustrated in pulse flows to the electric current of device, and the trace of bottom is illustrated in the electric current of the falling edge bleeder of pulse.Aforesaid predicting the outcome supported in this simulation.The turn-on and turn-off current transient is all in significantly less than 1ns, and the energy of each transition is approximately 10pJ.
For the uniform concentration of the free carrier in the optical mode, determined phase shift and the absorption in the table I.In the device in Fig. 1, light beam will not run into uniform carrier concentration.Or rather, the variation of charge carrier and carrier concentration will trend towards localizing in trap, and the variation of caused refractive index and absorption loss is that polarization is relevant to a certain extent.There is controlled the overlapping of potential well (115a, 115b) and waveguide core (116).Proportional with the overlapping amount of free carrier trap and optical mode, phase shift and absorption will be correspondingly higher.
Feature by design waveguide and doping can be designed to the propagation of the light of the vertical and horizontal polarization by device of the present invention identical or different.In the exemplary bilateral well structure of the embodiment of Fig. 1, horizontal polarization light will be subjected to bigger phase shift than orthogonal polarized light.Therefore, can adjust degree that trap fills causing 180 ° of phase shifts (and when mixing, almost completely offsetting) for horizontal polarization light, and orthogonal polarized light will be propagated (and so will not exclusively offset) with less phase shift when mixing with split beam with undelayed split beam.If use more symmetrical well structure, for example trap is at above and below and the left side and the right (the seeing for example Fig. 6 C) of core, and then two kinds of polarizations can be by the identical degree of skew.By adjusting overlapping degree in the horizontal and vertical directions, can arbitrarily adjust the phase differential between level and the orthogonal polarized light.
In the one exemplary embodiment of Fig. 1, for the exemplary waveguide dimensions of being discussed, the height that increases rib 105 is easy to make transverse magnetic (TM) pattern to slow down more than transverse electric (TE) pattern usually.Generally speaking, by changing waveguide dimensions or shape TE and TM polarization there are Different Effects: will slow down TE polarization (the effective optical index of higher TE) and quicken TM (lower TM optical index) of not high wide waveguide, and high narrow structure will have opposite effect.For TM and TE polarization, strainless square waveguide will have identical availability indexes.Rib structure is followed this general rule, but because this structure is more complicated, so influence is a bit not too obvious.For each polarization, the eclipse effect of doped region 115a, 115b and optical mode 150 is as the variation of the effective refractive index of the function of the variation of the carrier concentration in optical mode.By waveguide of suitable modification rib and doping profile, can make the polarization correlated of device response minimize or maximize.
Referring now to Fig. 4 A the exemplary method that is used for forming according to device 500 of the present invention is described to 4D.
In Fig. 4 A, rib 505 is formed on and is arranged on insulator substrates 520 for example on the upper face of the silicon layer 510 on the silica.This rib 505 of hard mask 525 patternings that utilization is made by the dielectric material that uses in silicon processing usually.Dielectric hard mask 525 are stayed the original place after forming rib 505, and with acting on the template that forms sidewall subsequently, as described below.
Second dielectric is deposited on the device and is etched then.Select second dielectric material so as optionally etching it and do not remove first dielectric that in hard mask 525, uses.For example, first dielectric substance can be silicon nitride (Si
3N
4) and second dielectric can be silicon dioxide (SiO
2).Be removed when second dielectric but stopped etching when being retained on the vertical side of rib 505 from the horizontal surface of device.As shown in Fig. 4 B, therefore the sidewall of being made by second dielectric 535 is formed on any side of rib 505.Sidewall 535 can or can be not extend upward along the vertical plane of hard mask 525 at least in part yet.
After forming sidewall 535, the P type dopant ion of injecting suitable dosage is to make p type island region 540.Preferably, the dopant ion concentration in resulting p type island region 540 is approximately 10
17To 10
18Ion/cm
3Dielectric hard mask 525 and sidewall 535 are got rid of P type dopant ion beyond the core of waveguide, and the thickness of sidewall 535 indication p type island region 540 is with respect to the lateral attitude of rib 505.
The part in the district 540 adjacent with waveguide core is corresponding to aforementioned P type doped region 115a, the 115b that does not contact of the exemplary device of Fig. 2.Because adulterant injects and the transverse scattering of diffuse dopants, district 540 (and therefore 115a, 115b) can lateral expansion, may be as far as the zone under rib 105.Can adjust that the width of sidewall 535 and adulterant inject and method for annealing overlapping with the expectation that provides doped region 540 and optical mode.
Can utilize above-mentioned sidewall forming process that the width of sidewall 535 is controlled within the fraction of thickness.This is more much better and allow the control of good lateral attitude than photolithographic tolerances.Utilize this technology, under situation about not needing, can make width and be the not doped region of contact (in Fig. 2, being regional 115a, 115b) of the free carrier that about 0.1 μ m and control is better than about 0.01 μ m than the more accurate lithographic features of about 0.5 μ m.
Repeat above-mentioned sidewall forming process, and second dielectric is applied to than thickness bigger in the first side wall forming process.Horizontal surface from device etches away second dielectric then, and as shown in Fig. 4 C, forms second group of sidewall 545, and sidewall 545 is wideer than the first side wall 535.Can on sidewall 535, form sidewall 545, perhaps can before forming sidewall 545, remove sidewall 535.
Apply injecting mask 550 then and inject N type dopant ion to form N type doped region 555 (corresponding to the zones 114 of Fig. 1) with high concentration.The bigger thickness of sidewall 545 makes the N type zone 555 that produces form fartherly from waveguide core, therefore the quiescent dissipation in the waveguide core is minimized.
As shown in Fig. 4 D, apply another injecting mask 560 then and inject P type dopant ion to form district 565 with high concentration, it extends downwardly into buried conductive P type layer 530.The result is the device with structure as shown in fig. 1.
Can utilize well-known technology to finish this device then.Can utilize dielectric layer to cover this device and be based upon through hole in the dielectric, need metal line to contact highly doped N type layer and P type layer at this.Utilize the standard job operation, metal level is deposited and is patterned to make required wiring.
As shown in Figure 2, forming device 100, can on the part of the length of semiconductor waveguide 101, realize exemplary phase shifter 100 of the present invention by the waveguide of optionally mixing.Therefore multiple structure be can form, a plurality of phase shifters that are provided with along the length series connection of semiconductor waveguide or waveguide a plurality of in parallel for example comprised with the phase shifter on single silicon layer.
Although illustrate and described the present invention with respect to concrete technological process, should be understood that, can use many other similar technological processes to realize essentially identical structure, and can use without departing from the scope of the invention.
Although, should be understood that,, can use any semiconductor material system without departing from the scope of the invention with respect to silicon waveguide and can illustrate and describe one exemplary embodiment of the present invention with the dielectric and the metal of silicon compatibility.
In addition, although illustrate and described the present invention,, also can use conventional silicon substrate without departing from the scope of the invention with respect to silicon-on-insulator (SOI) substrate embodiment.Should utilize dielectric substance to cover substrate, and can utilize the horizontal outgrowth of conventional dielectric patternization and selective epitaxial (ELO) technology on dielectric layer, to make single-crystal silicon waveguides then.This embodiment shown in Figure 5.
In the embodiment of Fig. 5, silicon substrate has been capped silica layer 620.In silica, form the hole, and the technology by epitaxial lateral overgrowth (ELO), pass upwards and outwards 625 grown silicon ribs 605 laterally of this hole.As required, can utilize chemical-mechanical polishing to make the top surface complanation of silicon waveguide.Inject and annealing process by common ion, formation is corresponding to the district 112 of the embodiment of Fig. 1 and 114 P type heavily doped region 612 and N type heavily doped region 614 in silicon layer 625.P type doped region 615a, 615b provide the trap of free carrier, and it is depleted under the reverse biased of heavily doped P and N district 612 and 614.Optical mode is depicted as 650.
As other embodiment, can utilize the electronics instead of holes as free carrier, and the doping polarity of device is inverted.In addition, although illustrated and described the present invention,, also can use polysilicon or amorphous silicon waveguide without departing from the scope of the invention with respect to single-crystal silicon waveguides.
Although illustrate and described the present invention with respect to the concrete doping profile that on any side of waveguide core, has two traps (for example 115a, 115b), but should be understood that, without departing from the scope of the invention, can use the partially or completely overlapping any doping profile that allows potential well and waveguide, wherein externally under the control of electrode potential well can be empty or be filled.For example, also can use the single central well overlapping with waveguide core.At this embodiment shown in Fig. 6 A, wherein single central well 715 is overlapping with waveguide core basically.Fig. 6 B illustrates another one exemplary embodiment of the phase shifting equipment with single central well 715, and it is a T shape, and the vertical component (or tongue) of this " T " is overlapping with waveguide core.
Fig. 6 C illustrates the one exemplary embodiment with four trap profiles, and trap 715a and 715b on the left side of waveguide core and the right and trap 715c and 715d in the above and below of waveguide core.
Exemplary device with N trap profile within the scope of the present invention, N 〉=2 wherein, wherein these traps are around waveguide core.
Fig. 7 illustrates the modification of the embodiment of Fig. 1, wherein provides the gap in P type heavy doping bottom zone 113.This gap reduce by the light beam of waveguide absorption simultaneously minimally influence free carrier and is transferred to potential well 115a and 115b and transports from potential well 115a and 115b.In the exemplary device of Fig. 7, it is wide that regional 115a and 115b are approximately 0.08 μ m.The thickness of silicon layer 110 (not having rib 105) is approximately 0.2 μ m.The degree of depth of zone 114,115a and 115b is approximately 0.08 μ m.
Can be with phase shifter of the present invention and other elements combination to make modulator.Fig. 8 is illustrated in the block scheme that uses the exemplary modulator 10 of phase shifter 12 in the arm of the light beam that has divided.Splitter 14 is divided into two arms with input beam, and one of them has the phase shifter 12 that becomes delegation with it, and it optionally makes the appropriate section of its light beam stand phase shift.Nominally another arm does not comprise phase shifting equipment and does not introduce phase shift.Two arms by phase shift and be not combined by combiner 16 and from modulator 10 output by the light beam of phase shift.If by the light beam in the arm of phase shift by phase shift π radian, then it will and will cause with light beam generation destructive interference in another arm not having or output seldom.If light beam is not by phase shift, then it will carry out constructive interference, and except inevitable loss and the propagation loss in waveguide and phase shifter that the coupling owing to waveguide causes, will present approximate complete the duplicating of input beam in output place.
Alternatively, zero phase shifter 22 can be included in modulator 10 not by in the arm of phase shift.Zero phase shifter 22 is preferably two identical phase shifters 12, but it is in such duty, i.e. delay by it is minimized.Thereby, when being activated, do not introduce when postponing by phase shifter 12, and two arms will be subjected to similar identical propagation delay and loss, therefore make Xiang Changzai in conjunction with maximization.
It being understood that the foregoing description has only illustrated the specific embodiment that some are possible, it can represent application of the present invention.Under the situation that does not break away from the spirit and scope of the present invention, those skilled in the art can make other configuration multiple and that change.
Claims (10)
1. optical phase shifter device comprises:
Waveguide, wherein this waveguide comprises:
Optical mode part, this optical mode partly allow light beam to pass through the there, and
Doped region, wherein this doped region comprises the free charge charge carrier and overlaps with optical mode; And
Semiconductor structure, wherein this semiconductor structure comes the free charge charge carrier content in controlled doping district according to the electric control of outside.
2. device as claimed in claim 1, wherein doped region comprises that P type doped region and free charge charge carrier comprise the hole.
3. device as claimed in claim 1, wherein the optical mode of waveguide partly comprises core space, the essentially no adulterant of this core space, and wherein waveguide comprises two doped regions, these two doped regions are arranged on the opposite side of core space.
4. device as claimed in claim 3, wherein waveguide comprises the plural doped region around core space.
5. device as claimed in claim 1, wherein the optical mode of waveguide partly comprises core space, this core space and doped region are overlapping.
6. device as claimed in claim 1, wherein doped region has about 10
16To 10
18Ion/cm
3Dopant ion concentration.
7. device as claimed in claim 1, wherein this semiconductor structure comprises:
First high-doped zone, this first high-doped zone are set near doped region and have been doped opposite polarity polarity with doped region; And
Second high-doped zone, this second high-doped zone has been doped the polarity similar to the polarity of doped region,
Wherein when leap first and second high-doped zones applied reverse bias voltage, the free charge charge carrier content of doped region reduced.
8. device as claimed in claim 7, wherein second high-doped zone comprises low layer, and this low layer separates and comprises therein the gap by unadulterated zone basically with doped region, and this gap is set near the optical mode part.
9. method of operating waveguide, wherein the speed of the propagation by waveguide is the function of the quantity of the free charge charge carrier in the zone of waveguide, this method may further comprise the steps:
Controllably reduce the quantity of the free charge charge carrier in this zone.
10. method as claimed in claim 9, the step that wherein controllably reduces the quantity of free carrier comprise that applying electric potential difference arrives near this regional semiconductor structure.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60172304P | 2004-08-16 | 2004-08-16 | |
| US60/601,723 | 2004-08-16 | ||
| US11/161,744 | 2005-08-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101006382A true CN101006382A (en) | 2007-07-25 |
| CN100472279C CN100472279C (en) | 2009-03-25 |
Family
ID=38704616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005800280410A Active CN100472279C (en) | 2004-08-16 | 2005-08-16 | High-speed semiconductor waveguide phase-shifter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100472279C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012103823A2 (en) * | 2012-03-14 | 2012-08-09 | 华为技术有限公司 | Phase shifter, coupler and methods for their production |
| CN103137777A (en) * | 2011-11-21 | 2013-06-05 | 富士通株式会社 | Semiconductor optical device |
| CN102165346B (en) * | 2008-09-30 | 2013-08-14 | 英特尔公司 | Method and apparatus for high speed silicon optical modulation using PN diode |
| CN112666728A (en) * | 2019-10-15 | 2021-04-16 | 苏州旭创科技有限公司 | Electro-optical modulator |
-
2005
- 2005-08-16 CN CNB2005800280410A patent/CN100472279C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102165346B (en) * | 2008-09-30 | 2013-08-14 | 英特尔公司 | Method and apparatus for high speed silicon optical modulation using PN diode |
| CN103137777A (en) * | 2011-11-21 | 2013-06-05 | 富士通株式会社 | Semiconductor optical device |
| WO2012103823A2 (en) * | 2012-03-14 | 2012-08-09 | 华为技术有限公司 | Phase shifter, coupler and methods for their production |
| WO2012103823A3 (en) * | 2012-03-14 | 2013-02-28 | 华为技术有限公司 | Phase shifter, coupler and methods for their production |
| CN112666728A (en) * | 2019-10-15 | 2021-04-16 | 苏州旭创科技有限公司 | Electro-optical modulator |
| CN112666728B (en) * | 2019-10-15 | 2023-06-20 | 苏州旭创科技有限公司 | Electro-optic modulator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100472279C (en) | 2009-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4904272B2 (en) | High-speed semiconductor waveguide phase shifter | |
| KR101157374B1 (en) | Method and apparatus for high speed silicon optical modulation using pn diode | |
| US8362494B2 (en) | Electro-optic device with novel insulating structure and a method for manufacturing the same | |
| US8817354B2 (en) | Optical device having reduced optical leakage | |
| JP5154921B2 (en) | High frequency optoelectronic modulator integrated on silicon. | |
| US8989522B2 (en) | Isolation of components on optical device | |
| US9523870B2 (en) | Vertical PN silicon modulator | |
| CN111665645B (en) | Electro-optical modulator | |
| US7542630B2 (en) | High speed optical phase modulator | |
| KR20160019044A (en) | Optic modulator and method of manufacturing the same | |
| US6653161B1 (en) | Method and apparatus for forming a capacitive structure including single crystal silicon | |
| SG176537A1 (en) | A phase shifting device and a method for manufacturing the same | |
| CN100472279C (en) | High-speed semiconductor waveguide phase-shifter | |
| US8542954B2 (en) | Optical component having reduced dependency on etch depth | |
| US8728837B2 (en) | Enhancing uniformity of slab region thickness in optical components | |
| US7865053B2 (en) | Multi-semiconductor slab electro-optic modulator and process for using the same | |
| US8639065B2 (en) | System having avalanche effect light sensor with enhanced sensitivity | |
| CN116165813A (en) | Optical modulator and method of forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |