CN111261653B - 微型发光二极管、显示面板及其转移方法 - Google Patents
微型发光二极管、显示面板及其转移方法 Download PDFInfo
- Publication number
- CN111261653B CN111261653B CN201811455075.3A CN201811455075A CN111261653B CN 111261653 B CN111261653 B CN 111261653B CN 201811455075 A CN201811455075 A CN 201811455075A CN 111261653 B CN111261653 B CN 111261653B
- Authority
- CN
- China
- Prior art keywords
- assembly binding
- electrode
- emitting diode
- light emitting
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 119
- 239000000853 adhesive Substances 0.000 claims description 33
- 230000001070 adhesive effect Effects 0.000 claims description 33
- 239000007788 liquid Substances 0.000 claims description 17
- 238000003466 welding Methods 0.000 claims description 8
- 239000012530 fluid Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000001338 self-assembly Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 39
- 238000010586 diagram Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002094 self assembled monolayer Substances 0.000 description 6
- 239000013545 self-assembled monolayer Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical group S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811455075.3A CN111261653B (zh) | 2018-11-30 | 2018-11-30 | 微型发光二极管、显示面板及其转移方法 |
| KR1020217019453A KR102551062B1 (ko) | 2018-11-30 | 2019-05-09 | 마이크로 발광 다이오드, 디스플레이 패널 및 그 전사 방법 |
| PCT/CN2019/086256 WO2020107811A1 (zh) | 2018-11-30 | 2019-05-09 | 微型发光二极管、显示面板及其转移方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811455075.3A CN111261653B (zh) | 2018-11-30 | 2018-11-30 | 微型发光二极管、显示面板及其转移方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111261653A CN111261653A (zh) | 2020-06-09 |
| CN111261653B true CN111261653B (zh) | 2023-08-01 |
Family
ID=70854706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811455075.3A Active CN111261653B (zh) | 2018-11-30 | 2018-11-30 | 微型发光二极管、显示面板及其转移方法 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102551062B1 (ko) |
| CN (1) | CN111261653B (ko) |
| WO (1) | WO2020107811A1 (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370541A (zh) * | 2020-04-20 | 2020-07-03 | 武汉华星光电技术有限公司 | Micro-LED芯片坏点修复方法 |
| CN112993136B (zh) * | 2020-08-05 | 2022-07-22 | 重庆康佳光电技术研究院有限公司 | 发光二极管芯片、显示背板及显示背板组装方法 |
| CN114765118A (zh) * | 2021-01-15 | 2022-07-19 | 华为技术有限公司 | 芯片的转移方法、晶圆以及用于抓取芯片的转移头 |
| WO2023171833A1 (ko) * | 2022-03-10 | 2023-09-14 | 엘지전자 주식회사 | 반도체 발광소자를 포함하는 디스플레이 장치 및 이의 제조방법 |
| CN118156398B (zh) * | 2024-05-10 | 2024-07-12 | 汕头超声显示器技术有限公司 | 一种led阵列装置的制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200633084A (en) * | 2005-03-11 | 2006-09-16 | Univ Nat Taiwan | Method for self-assembling microstructure |
| TW201014784A (en) * | 2008-10-09 | 2010-04-16 | Nat Univ Tsing Hua | Microparts and apparatus for self-assembly and alignment of microparts thereof |
| CN103594461A (zh) * | 2010-09-01 | 2014-02-19 | 无限科技全球公司 | 二极体、二极体或其他二端积体电路的液体或胶体悬浮液的可印组成物及其制备方法 |
| CN107924033A (zh) * | 2015-08-11 | 2018-04-17 | 甲骨文国际公司 | 自组装的垂直对准的多芯片组件 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4149507B2 (ja) * | 2005-09-29 | 2008-09-10 | 松下電器産業株式会社 | 電子回路構成部材のマウント方法およびマウント装置 |
| KR102030331B1 (ko) * | 2010-09-01 | 2019-10-10 | 엔티에이치 디그리 테크놀로지스 월드와이드 인코포레이티드 | 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법 |
| JP2018041876A (ja) * | 2016-09-08 | 2018-03-15 | スタンレー電気株式会社 | 発光装置の製造方法及び発光装置 |
| CN107170771B (zh) * | 2017-05-23 | 2019-12-24 | 深圳市华星光电技术有限公司 | 微发光二极管阵列基板的封装结构及其封装方法 |
| CN107170772A (zh) * | 2017-05-23 | 2017-09-15 | 深圳市华星光电技术有限公司 | 微发光二极管阵列基板的封装结构 |
-
2018
- 2018-11-30 CN CN201811455075.3A patent/CN111261653B/zh active Active
-
2019
- 2019-05-09 KR KR1020217019453A patent/KR102551062B1/ko active IP Right Grant
- 2019-05-09 WO PCT/CN2019/086256 patent/WO2020107811A1/zh active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200633084A (en) * | 2005-03-11 | 2006-09-16 | Univ Nat Taiwan | Method for self-assembling microstructure |
| TW201014784A (en) * | 2008-10-09 | 2010-04-16 | Nat Univ Tsing Hua | Microparts and apparatus for self-assembly and alignment of microparts thereof |
| CN103594461A (zh) * | 2010-09-01 | 2014-02-19 | 无限科技全球公司 | 二极体、二极体或其他二端积体电路的液体或胶体悬浮液的可印组成物及其制备方法 |
| CN107924033A (zh) * | 2015-08-11 | 2018-04-17 | 甲骨文国际公司 | 自组装的垂直对准的多芯片组件 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210088002A (ko) | 2021-07-13 |
| CN111261653A (zh) | 2020-06-09 |
| KR102551062B1 (ko) | 2023-07-05 |
| WO2020107811A1 (zh) | 2020-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111261653B (zh) | 微型发光二极管、显示面板及其转移方法 | |
| CN108493154B (zh) | Micro LED显示面板的制作方法及Micro LED显示面板 | |
| CN107887331B (zh) | 一种Micro-LED发光显示器件的制备方法 | |
| CN112908897B (zh) | 基于无掩膜光刻的MicroLED芯片粘附式阵列转移方法 | |
| US20190244846A1 (en) | Transfer device | |
| CN111199907A (zh) | 微发光器件的转移方法及转移设备 | |
| CN107799455A (zh) | 转运头及其制作方法、转印方法及显示面板的制作方法 | |
| KR20200114811A (ko) | 디스플레이 모듈 및 디스플레이 모듈의 제조 방법 | |
| US20220216187A1 (en) | Method of transferring micro light emitting diodes and display panel | |
| CN112802789B (zh) | 一种微元件的转移方法 | |
| CN111199908A (zh) | 微发光器件的转移方法及转移设备 | |
| CN113054073A (zh) | 驱动背板及其制作方法、转移方法、显示装置 | |
| TWI792145B (zh) | 傳送基板 | |
| JP2022041533A (ja) | マイクロｌｅｄディスプレイ製造用の中間構造体、マイクロｌｅｄディスプレイ製造用中間構造体の製造方法、およびマイクロｌｅｄディスプレイの製造方法 | |
| CN110289234B (zh) | 用于发光单元的巨量转移方法，阵列基板以及显示装置 | |
| US10971542B2 (en) | Method of forming a semiconductor device | |
| CN112424958B (zh) | 微型发光二极管的巨量转移方法及系统 | |
| JP7228130B2 (ja) | 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法 | |
| TW201203197A (en) | Display apparatus and manufacturing method thereof | |
| JPWO2008088069A1 (ja) | 微小構造体の集積方法，微小構造体およびマイクロデバイス | |
| CN112968021A (zh) | 一种键合方法和显示装置 | |
| JP2020194089A (ja) | 転写部材、転写部材の製造方法及び発光基板の製造方法 | |
| JP2020191423A (ja) | 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法 | |
| KR20190081364A (ko) | 금속전극-마이크로소자 접합방법 | |
| US8247908B2 (en) | Circuit substrate and method for utilizing packaging of the circuit substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20201217 Address after: No.146 Tianying Road, Chengdu hi tech Zone, Chengdu, Sichuan Province Applicant after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: No. 188, CHENFENG Road, Kunshan high tech Zone, Kunshan City, Suzhou City, Jiangsu Province Applicant before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Applicant before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |