CN111261601A - Clamp embedded type high-integration-level compression joint type packaged power module - Google Patents
Clamp embedded type high-integration-level compression joint type packaged power module Download PDFInfo
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- CN111261601A CN111261601A CN202010056949.9A CN202010056949A CN111261601A CN 111261601 A CN111261601 A CN 111261601A CN 202010056949 A CN202010056949 A CN 202010056949A CN 111261601 A CN111261601 A CN 111261601A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
Abstract
The invention discloses a high-integration compression joint type packaging power module with an embedded clamp, which comprises a positive radiating fin, a direct-current positive copper bar, an alternating-current output copper bar, a direct-current negative copper bar and a negative radiating fin which are sequentially arranged from top to bottom; semiconductor chip units are symmetrically arranged on two sides of the alternating current output copper bar, threaded holes penetrating through the crimping type module are uniformly distributed on the periphery of each semiconductor chip unit, the semiconductor chip units are fastened through insulating double-headed screws, and external threads on the insulating double-headed screws are meshed with internal threads of the threaded holes to generate crimping force; the module is crimped by adopting the embedded clamp, and the copper bar and the radiator are used as components of the module, so that high power density and high integration are realized; compared with the traditional crimping type packaged power module, the technical scheme of the invention has the advantages that the design of the clamp is optimized, the design cost is reduced, and the manufacturing process is simplified.
Description
Technical Field
The invention belongs to the technical field of power electronic devices, and particularly relates to a clamp embedded type high-integration-level compression joint type packaged power module.
Background
Compared with a plastic package welding type packaging technology, the compression joint type packaging technology has the application characteristics of binding-free lines, no solder layer, double-sided heat dissipation, short circuit failure and the like, and a high-power semiconductor module manufactured by the packaging technology, such as a thyristor (SCR), an Integrated Gate Commutated Thyristor (IGCT), a compression joint type Insulated Gate Bipolar Transistor (IGBT) and the like, has the advantages of low thermal impedance, wide safe working area, high rated power and the like, and is widely applied to occasions with complex working conditions, severe environments and high reliability requirements, such as flexible direct current transmission, high-speed rail transit, long-distance wind power generation and the like.
Due to the particularity of the compression-type packaging technology, in order to realize reliable electrical connection between the interior of the module and the module, 10-20 megapascals of pressure are required to be applied to the module chip. Fig. 1 shows a typical crimping force realizing clamp structure applied to a commercially available crimping module, which includes a fastening bolt 1, a support plate 2, a fastening stud 3, a disc spring assembly 4, a bearing plate 5, a heat sink 6, a crimping module 7, and the like. Wherein the disk spring group 4 is formed by stacking a plurality of identical disk springs to satisfy the crimping force required by the crimping module 7. Fastening studs 1 are vertically arranged at four corners outside the crimping type module 7, and the deformation of the disc spring set 4 is fixed through the support plate 2 and the fastening studs 3, so that the disc spring set 4 keeps a compression state and maintains a crimping force.
Although the clamp can realize pressurization and maintain pressure, the following defects are needed to be improved: (1) the clamp needs a supporting plate and a bearing plate which have the same size as the compression joint type module, and a fastening piece and a disc spring group are added, so that the volume and the use cost of the whole set of power conversion device are increased; (2) due to the adoption of a centralized pressure maintaining mode, the pressure among the chips in the compression joint type module is unbalanced, the chip at the central part of the module is stressed greatly, and the chip at the edge of the module is stressed less; (3) due to the complex design of the clamp, the requirement on the operation precision is high, in addition, the stress of the chip is unbalanced, and once the operation is wrong, the central chip is damaged or the edge chip is connected inefficiently.
Disclosure of Invention
In order to solve the problems, the invention provides a clamp-embedded high-integration compression joint type packaging power module, which removes a compression joint clamp of a traditional outer frame, utilizes a conductive copper bar and a radiating aluminum sheet to directly serve as pressure contact elements, embeds double-headed cylindrical screws in the module, uniformly distributes the screws around a chip, and applies and maintains the compression joint force required by the chip.
In order to achieve the purpose, the invention provides a clamp embedded high-integration-level compression joint type packaged power module, which comprises a positive pole radiating fin, a compression joint type module and a negative pole radiating fin which are sequentially connected from top to bottom; the crimping module comprises a direct current positive electrode copper bar, an alternating current output copper bar, a direct current negative electrode copper bar and a semiconductor chip unit.
Semiconductor chip units are symmetrically arranged on two sides of the alternating current output copper bar, threaded holes penetrating through the direct current positive copper bar, the alternating current output copper bar and the direct current negative copper bar are uniformly distributed on the periphery of each semiconductor chip unit, the semiconductor chip units are fastened through insulating double-headed screws, and external threads on the insulating double-headed screws are meshed with internal threads of the threaded holes to generate pressing force; and the upper surface and the lower surface of the direct-current positive copper bar and the direct-current negative copper bar are respectively provided with an insulating film, the direct-current positive copper bar and the direct-current negative copper bar are respectively provided with a direct-current bus capacitor interface, and the alternating-current output copper bar is provided with a load interface.
Preferably, the upper surface and the lower surface of the alternating current output copper bar are symmetrically provided with a first positioning groove and a second positioning groove for mounting the semiconductor chip unit, the anode of the semiconductor chip unit is tightly attached to the second positioning groove, and the cathode of the semiconductor chip unit is tightly attached to the first positioning groove; and the lower insulating film of the direct current positive electrode copper bar and the upper insulating film of the direct current negative electrode copper bar are provided with through holes for the semiconductor chip units to pass through.
Preferably, the height of the insulating double-headed screw is flush with the upper surface of the direct-current positive copper bar and the lower surface of the alternating-current output copper bar.
Preferably, the semiconductor chip unit is an integrated laminated assembly formed by an upper molybdenum sheet, a semiconductor chip, a lower molybdenum sheet and an aluminum sheet from top to bottom; the anode of the semiconductor chip is in compression joint with the upper molybdenum sheet, and the cathode of the semiconductor chip is in compression joint with the lower molybdenum sheet.
Preferably, the upper molybdenum sheet and the lower molybdenum sheet have a thickness of 100 to 400 μm, and the aluminum sheet has a thickness of 50 to 200 μm.
In a preferred embodiment of the present invention, the semiconductor chip is a silicon diode chip, a schottky diode chip, a silicon carbide diode chip, or a silicon carbide diode chip.
Preferably, the semiconductor chip unit is provided with a step limiting structure, the lower insulating film of the direct-current positive copper bar and the upper insulating film of the direct-current negative copper bar are provided with step holes for the semiconductor chip unit to pass through, and the step holes are matched with the step limiting structure.
Preferably, the insulating double-headed screw is made of polyetheretherketone, and the insulating film is made of polyethylene terephthalate.
In the present invention, the thickness of each insulating film is preferably 50 μm or more.
Preferably, the positive heat sink, the pressure-welding module and the negative heat sink are provided with through threaded holes and fastened by lengthened insulated double-headed screws.
Compared with the prior art, the invention has the following advantages:
(1) the power module in the invention cancels external frame clamps such as a disc spring, a supporting plate, a bearing plate and the like, and adopts embedded high-strength double-headed screws to be distributed around the chip, thereby ensuring the crimping force and improving the power density of the module.
(2) According to the invention, the positive and negative copper bars on the direct current side are crimped to form a laminated structure, and the insulating film is used for ensuring the insulating strength, so that the stray parameters of the power circuit are reduced while the safe application is ensured.
(3) According to the invention, the radiating fins are attached to the surface of the direct current copper bar, so that the double-sided radiating characteristic of the compression joint type packaging module is realized, and the overall thermal impedance of the module is reduced.
(4) According to the invention, the double-headed screws are uniformly distributed around the parallel pressed chip units, so that the rotating torque is converted into pressure, and the chip units are tightly pressed and connected through the copper bars, thereby ensuring uniform pressure on a single chip and uniform pressure distribution among the parallel pressed chip units. Through the mechanical compression joint stress which is uniformly distributed, the thermal contact resistance between the chip and the copper bar and the uniform distribution of the contact resistance are ensured, the occurrence of a temperature extreme hot point in the application process is avoided, and the compression joint type packaging module still keeps high reliability under the condition of multi-chip parallel connection.
Drawings
Fig. 1 is a schematic structural view of a conventional typical crimping force achieving jig;
FIG. 2 is an exploded view of an embodiment of a high-integration compression-bonded packaged power module according to the present invention;
FIG. 3 is a schematic cross-sectional view of an overall structure of one embodiment of a high-integration compression-type packaged power module according to the present invention;
FIG. 4 is a schematic cross-sectional view of a partial structure of a high-integration compression-bonded package power module according to an embodiment of the present invention;
in the figure: 1-fastening bolt, 2-support plate, 3-fastening stud, 4-disc spring group, 5-bearing plate, 6-radiator, 7-crimping module, 8-positive heat sink, 9-lengthened insulating stud screw, 10-upper insulating film of direct current positive copper bar, 11-direct current positive copper bar, 12-insulating stud screw, 13-lower insulating film of direct current positive copper bar, 14-semiconductor chip unit, 15-alternating current output copper bar, 16-upper insulating film of alternating current output copper bar, 17-direct current negative copper bar, 18-lower insulating film of alternating current output copper bar, 19-negative heat sink, 20-upper molybdenum sheet, 21-semiconductor chip, 22-insulating film, 23-lower molybdenum sheet, 24-aluminum sheet, 25-the lower surface of the direct current positive copper bar or the alternating current output copper bar, 26-the upper surface of the direct current negative copper bar or the alternating current output copper bar, and 27-the positioning groove.
Detailed Description
For a better understanding of the present invention, reference will now be made in detail to the present embodiments of the invention as illustrated in the accompanying drawings.
In the description of the present invention, it should be noted that a series of terms describing an orientation, such as "upper", "lower", "left", "right", "inner", "outer", "vertical", "horizontal", etc., are used to indicate an orientation or positional relationship based on the drawings, and are used only for convenience of description of the present invention, and do not indicate or imply that a device or component of the present invention must have a specific orientation or be constructed or operated in a specific orientation, and thus, should not be construed as limiting the present invention.
As shown in fig. 2, a schematic structural decomposition diagram of an embodiment of the clamp-embedded high-integration compression-bonding packaged power module according to the present invention is shown, the compression-bonding packaged power module according to the present invention mainly includes a semiconductor chip unit with a molybdenum sheet and an aluminum sheet compression-bonded on both sides, a dc conductive copper bar and an ac conductive copper bar in a stacked structure, an aluminum heat sink with fins, a high-strength insulating stud screw, and an insulating film, wherein the stud screw is made of polyetheretherketone, and the insulating film is made of polyethylene terephthalate.
Specifically, the direct-current conductive copper bar comprises a direct-current positive copper bar 11 and a direct-current negative copper bar 17, and the alternating-current conductive copper bar is used as an alternating-current output copper bar 15; semiconductor chip units 14 are symmetrically arranged on two sides of the alternating current output copper bar 15, threaded holes penetrating through the direct current positive copper bar 11, the alternating current output copper bar 15 and the direct current negative copper bar 17 are uniformly distributed on the periphery of each semiconductor chip unit 14, the semiconductor chip units are fastened through insulating double-headed screws 12, and the external threads on the insulating double-headed screws 12 are meshed with the internal threads of the threaded holes to generate pressing force; insulating films are arranged on the upper surface and the lower surface of the direct current anode copper bar 11 and the direct current cathode copper bar 17, direct current bus capacitor interfaces are arranged on the direct current anode copper bar 11 and the direct current cathode copper bar 17, and load interfaces are arranged on the alternating current output copper bar 15.
The structure of the clip-in type high integration crimp-packaged power module in a preferred embodiment of the present invention and a method for manufacturing the same are given below.
A straight through hole is arranged among the direct current positive copper bar 11, the direct current negative copper bar 17 and the alternating current output copper bar 15, and right-handed thread lines with consistent screw pitches are pulled out on the direct current positive copper bar 11 and the direct current negative copper bar 17, so that the positions of all holes are aligned and the diameters of all holes are consistent. Square positioning grooves are excavated on the direct current positive copper bar 11, the alternating current output copper bar 15 and the direct current negative copper bar 17, wherein the square positioning grooves are excavated on two sides of the alternating current output copper bar 15 and correspond to the positions of the square positioning grooves, the lengths and the widths of the grooves on the lower surface of the direct current positive copper bar 11 and the lower surface of the alternating current output copper bar 15 are kept consistent with the positive electrode surface of the semiconductor chip unit 14, the lengths and the widths of the grooves on the upper surface of the direct current negative copper bar 17 and the upper surface of the alternating current output copper bar 15 are kept consistent with the negative electrode surface of the semiconductor chip unit 14, and the positive electrode and the negative electrode of the.
Straight-through holes are punched in the upper insulating film 10 of the direct-current positive copper bar, the lower insulating film 13 of the direct-current positive copper bar, the upper insulating film 16 of the direct-current negative copper bar and the lower insulating film 18 of the direct-current negative copper bar, and the positions of the holes are aligned with the direct-current positive copper bar 11, the alternating-current output copper bar 15 and the direct-current negative copper bar 17 and are consistent in size. Straight-through square holes are dug in the direct-current positive electrode copper bar lower-layer insulating film 13 and the direct-current negative electrode copper bar upper-layer insulating film 16, and the sizes of the straight-through square holes are consistent with those of the semiconductor chip units 14. The through square hole on the insulating film is aligned with the position of the positioning groove above the copper bar, and the semiconductor chip unit 14 is positioned and clamped firmly in a matching way.
The method comprises the steps of placing a direct-current positive electrode copper bar upper-layer insulating film 10, a direct-current positive electrode copper bar 11, a direct-current positive electrode copper bar lower-layer insulating film 13, a semiconductor chip unit 14, an alternating-current output copper bar 15, a direct-current negative electrode copper bar upper-layer insulating film 16, a direct-current negative electrode copper bar 17 and a direct-current negative electrode copper bar lower-layer insulating film 18 in a vertical direction in an aligned mode from top to bottom, placing the semiconductor chip unit 14 in a square positioning groove, and fixing the semiconductor chip unit through a groove and a through square hole in the insulating film.
The screw pitch of the double-headed screw 12 is set to be the screw pitch in the direct-current positive copper bar 11 and the direct-current positive and negative copper bar 17, so that the thread lengths at the two ends of the double-headed screw are consistent with the thicknesses of the two direct-current copper bars, and the height of the insulating double-headed screw 12 is flush with the upper surface of the direct-current positive copper bar 11 and the lower surface of the alternating-current output copper bar 15. The insulating double-headed screw 12 is embedded into a punched through hole on the copper bar and the insulating film, the screw is screwed by right hand by fixing and applying the same torque, the rotary torque is converted into the crimping force, and the copper bar is driven to be crimped with the semiconductor chip unit 14.
The positive radiating fins 8 and the negative radiating fins 19 are respectively attached to the surfaces of the upper insulating film 10 of the direct-current positive copper bar and the lower insulating film 18 of the direct-current negative copper bar, through threaded holes are punched at the corners of the radiating fins, the copper bars and the insulating films, the radiating fins, the copper bars and the insulating films can be directly fixed and integrated by the lengthened insulating double-headed screws 9 without applying torque, and the high-integration compression joint type packaged power module shown in the figure 3 is formed.
In the present embodiment, a cross-sectional view of the pressed semiconductor chip unit 14 and the positioning groove is shown in fig. 4. Which comprises the following steps: the structure comprises an upper molybdenum sheet 20, a semiconductor chip 21, an insulating film 22, a lower molybdenum sheet 23, an aluminum sheet 24, a lower surface 25 of the direct current positive copper bar 11 or the alternating current output copper bar 15, an upper surface 26 of the direct current negative copper bar 17 or the alternating current output copper bar 15, and a positioning groove 27 located between the direct current copper bar and the alternating current copper bar.
The size of the upper molybdenum sheet 20 is consistent with the conductive size of the anode of the semiconductor chip 21, the size of the lower molybdenum sheet is consistent with the conductive size of the cathode of the semiconductor chip 21, the size of the aluminum sheet is consistent with the size of the lower molybdenum sheet, and the conductive size of the anode of the semiconductor chip 21 is larger than the conductive size of the cathode of the semiconductor chip 21, so that the cathode of the semiconductor chip 21 of the semiconductor chip unit 14 is provided with a stepped limiting structure, and the upper part of the stepped limiting structure is wide and the lower part of the stepped limiting structure is narrow. The pressed semiconductor chip units 14 are integrally placed in the positioning grooves 27, stepped holes for the semiconductor chip units 14 to pass through are formed in the lower-layer insulating film of the direct-current positive copper bar and the upper-layer insulating film of the direct-current negative copper bar, the stepped holes are matched with the stepped limiting structures, and the positioning grooves and the insulating films play a role in positioning at the same time. The positioning grooves 27 include a large groove provided on the lower surface 25 of the copper bar and a small groove provided on the upper surface 26 of the copper bar in order to match the structure of the semiconductor chip unit 14.
The anode of the semiconductor chip 21 is connected with the upper molybdenum sheet 20, the cathode is connected with the lower molybdenum sheet 23, and the aluminum sheet 24 is positioned between the lower molybdenum sheet 23 and the positioning groove 27. The thermal expansion coefficient of the upper molybdenum sheet 20 is between the copper bar and the semiconductor chip 21, and the deformation caused by heating is between the positioning groove 27 and the semiconductor chip 21, so that the buffer effect can be achieved. The lower molybdenum sheet 23 and the aluminum sheet 24 are sequentially placed between the semiconductor chip 21 and the copper bar from top to bottom, the deformation of the positioning groove 27 and the semiconductor chip 21 when the lower molybdenum sheet 23 is heated can be buffered by the lower molybdenum sheet 23, and the residual stress of the whole upper molybdenum sheet 20, the semiconductor chip 21 and the lower molybdenum sheet 23 and the small notch opening can be buffered by the aluminum sheet 24. Specifically, the thickness of the upper molybdenum sheet 20 and the lower molybdenum sheet 23 is 100 μm to 400 μm, and the thickness of the aluminum sheet is 50 μm to 200 μm. The insulating film 22 is divided into two layers, each having the same thickness, and serves to fix the semiconductor chip unit 14 and also to electrically insulate the same, thereby preventing a short circuit between two adjacent copper bars. Specifically, the insulating film has a thickness of 50 μm or more per layer.
In another embodiment of the present invention, the upper and lower surfaces of the ac output copper bar 15 are symmetrically provided with a first positioning groove and a second positioning groove for mounting the semiconductor chip unit 14; the width of the semiconductor chip unit 14 is uniform, the anode is tightly attached to the second positioning groove, and the cathode is tightly attached to the first positioning groove; the lower insulating film 13 of the direct current positive copper bar and the upper insulating film 16 of the direct current negative copper bar are provided with through holes for the semiconductor chip units 14 to pass through, the positioning of the semiconductor chip units 14 can be completed only through the alternating current output copper bars, and the height of the semiconductor chip units 14 is slightly higher than the groove depth of the first positioning grooves and the second positioning grooves. The semiconductor chip unit 14 is an integrated laminated assembly formed by an upper molybdenum sheet, a semiconductor chip, a lower molybdenum sheet and an aluminum sheet which are consistent in size except thickness from top to bottom; the anode of the semiconductor chip is in compression joint with the upper molybdenum sheet, the cathode of the semiconductor chip is in compression joint with the lower molybdenum sheet, and the semiconductor chip is a silicon diode chip, a Schottky diode chip, a silicon carbide diode chip or a silicon carbide diode chip.
Compared with the prior art, the invention is a typical crimping force realizing clamp structure applied to the existing commercial crimping type module as shown in figure 1, and comprises a fastening bolt 1, a support plate 2, a fastening stud 3, a disc spring group 4, a bearing plate 5, a heat radiator 6, a crimping type module 7 and the like. Wherein the disk spring group 4 is formed by stacking a plurality of identical disk springs to satisfy the crimping force required by the crimping module 7. Fastening studs 1 are vertically arranged at four corners outside the crimping type module 7, and the deformation of the disc spring set 4 is fixed through the support plate 2 and the fastening studs 3, so that the disc spring set 4 keeps a compression state and maintains a crimping force.
In summary, compared with the traditional crimping type power module, the crimping type packaging power module does not need to adopt a bonding wire process and a welding process, the semiconductor chip only needs to apply pressure and meets the crimping force condition, and the electrical connection can be realized through metal sheets such as molybdenum sheets, so that the failure problem caused by the fact that a binding wire is easy to fall off and a welding flux layer is easy to wear is avoided; an external clamp is not needed, large-size fasteners, bearing plates and the like are omitted, and cost and module weight are saved; by adopting a specific embedded clamp structure, the clamp space is saved while the crimping force is maintained, and the pressed semiconductor chip is uniformly stressed; by adopting a specific copper bar and radiator integrated structure, stray inductance and thermal impedance are effectively reduced, and a power module with high integration level characteristic is realized.
The embodiments described above are presented to enable a person having ordinary skill in the art to make and use the invention. It will be readily apparent to those skilled in the art that various modifications to the above-described embodiments may be made, and the generic principles defined herein may be applied to other embodiments without the use of inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications to the present invention based on the disclosure of the present invention within the protection scope of the present invention.
Claims (10)
1. A high-integration compression joint type packaged power module with an embedded clamp is characterized by comprising a positive pole radiating fin (8), a compression joint type module and a negative pole radiating fin (19) which are sequentially connected from top to bottom; the crimping module comprises a direct current positive electrode copper bar (11), an alternating current output copper bar (15), a direct current negative electrode copper bar (17) and a semiconductor chip unit (14);
semiconductor chip units (14) are symmetrically arranged on two sides of the alternating current output copper bar (15), threaded holes penetrating through the direct current positive copper bar (11), the alternating current output copper bar (15) and the direct current negative copper bar (17) are uniformly distributed on the periphery of each semiconductor chip unit (14), and are fastened through insulating double-headed screws (12), and external threads on the insulating double-headed screws (12) are meshed with internal threads of the threaded holes to generate a crimping force; insulating films are arranged on the upper surface and the lower surface of the direct current positive copper bar (11) and the direct current negative copper bar (17), direct current bus capacitor interfaces are arranged on the direct current positive copper bar (11) and the direct current negative copper bar (17), and load interfaces are arranged on the alternating current output copper bar (15).
2. The clamp-embedded high-integration compression-type packaged power module according to claim 1, wherein a first positioning groove and a second positioning groove for mounting the semiconductor chip unit are symmetrically formed on the upper and lower surfaces of the alternating current output copper bar (15), the positive electrode of the semiconductor chip unit is tightly attached to the second positioning groove, and the negative electrode of the semiconductor chip unit is tightly attached to the first positioning groove; the direct current positive electrode copper bar lower layer insulation film (13) and the direct current negative electrode copper bar upper layer insulation film (16) are provided with through holes for the semiconductor chip units (14) to pass through.
3. The highly integrated press-fit packaged power module of the clamp embedded type according to claim 1, wherein the height of the insulating double-headed screw (12) is flush with the upper surface of the dc positive electrode copper bar (11) and the lower surface of the ac output copper bar (15).
4. The clip-in type high-integration crimp-type packaged power module according to claim 1, wherein the semiconductor chip unit (14) is an integrated laminated assembly formed of an upper molybdenum sheet (20), a semiconductor chip (21), a lower molybdenum sheet (23), and an aluminum sheet (24) from top to bottom; the anode of the semiconductor chip (21) is in compression joint with the upper molybdenum sheet (20), and the cathode of the semiconductor chip is in compression joint with the lower molybdenum sheet (23).
5. The clamp-in type high-integration crimp-type packaged power module according to claim 4, wherein the upper and lower molybdenum sheets have a thickness of 100 μm to 400 μm, and the aluminum sheet has a thickness of 50 μm to 200 μm.
6. The clip-in-clip high-integration crimp packaged power module according to claim 4, wherein the semiconductor chip is a silicon diode chip, a Schottky diode chip, a silicon carbide diode chip or a silicon carbide diode chip.
7. The highly integrated, press-fit and packaged power module of claim 1, wherein the semiconductor chip unit has a step-shaped structure, and the lower insulating film of the dc positive copper bar and the upper insulating film of the dc negative copper bar have step holes for the semiconductor chip unit to pass through, the step holes being matched with the step-shaped structure.
8. The highly integrated crimp type packaged power module of the clip-in type according to claim 1, wherein the insulating double-headed screw (12) is made of polyetheretherketone and the insulating film is made of polyethylene terephthalate.
9. The clip-in type high-integration compression-mount packaged power module according to claim 1, wherein the thickness of each insulating film is 50 μm or more.
10. The clamp embedded type high-integration compression joint type packaging power module as claimed in claim 1, wherein the positive heat sink (8), the compression joint type module and the negative heat sink (19) are provided with through threaded holes and fastened through lengthened insulated double-headed screws.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112290773A (en) * | 2020-10-29 | 2021-01-29 | 浙江大学 | Voltage-variable compression joint type packaging power module and modeling method of thermal resistance network model thereof |
| CN112953170A (en) * | 2021-03-08 | 2021-06-11 | 清华大学 | Water-cooling high-power full-bridge unit based on crimping type IGCT |
| CN115206949A (en) * | 2022-07-13 | 2022-10-18 | 西安电子科技大学 | Vertical conductive type power semiconductor device double-sided compression joint packaging structure |
| WO2023092442A1 (en) * | 2021-11-26 | 2023-06-01 | 中车株洲电力机车研究所有限公司 | Integrated power semiconductor apparatus |
| CN117397022A (en) * | 2021-05-28 | 2024-01-12 | 日立能源有限公司 | Clamping element and method for producing a power semiconductor component |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010055714A1 (en) * | 2000-05-22 | 2001-12-27 | Alstom | Electronic power device |
| CN107146775A (en) * | 2017-06-14 | 2017-09-08 | 扬州国扬电子有限公司 | A kind of low stray inductance two-side radiation power model |
| CN207652320U (en) * | 2017-12-04 | 2018-07-24 | 江苏东方四通科技股份有限公司 | A kind of IGBT module stack bus bar |
-
2020
- 2020-01-16 CN CN202010056949.9A patent/CN111261601B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010055714A1 (en) * | 2000-05-22 | 2001-12-27 | Alstom | Electronic power device |
| CN107146775A (en) * | 2017-06-14 | 2017-09-08 | 扬州国扬电子有限公司 | A kind of low stray inductance two-side radiation power model |
| CN207652320U (en) * | 2017-12-04 | 2018-07-24 | 江苏东方四通科技股份有限公司 | A kind of IGBT module stack bus bar |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112290773A (en) * | 2020-10-29 | 2021-01-29 | 浙江大学 | Voltage-variable compression joint type packaging power module and modeling method of thermal resistance network model thereof |
| CN112953170A (en) * | 2021-03-08 | 2021-06-11 | 清华大学 | Water-cooling high-power full-bridge unit based on crimping type IGCT |
| CN117397022A (en) * | 2021-05-28 | 2024-01-12 | 日立能源有限公司 | Clamping element and method for producing a power semiconductor component |
| WO2023092442A1 (en) * | 2021-11-26 | 2023-06-01 | 中车株洲电力机车研究所有限公司 | Integrated power semiconductor apparatus |
| CN115206949A (en) * | 2022-07-13 | 2022-10-18 | 西安电子科技大学 | Vertical conductive type power semiconductor device double-sided compression joint packaging structure |
| CN115206949B (en) * | 2022-07-13 | 2023-09-29 | 西安电子科技大学 | Double-sided crimping packaging structure of vertical conduction type power semiconductor device |
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| CN111261601B (en) | 2021-10-19 |
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