CN112290773A - Voltage-variable compression joint type packaging power module and modeling method of thermal resistance network model thereof - Google Patents

Voltage-variable compression joint type packaging power module and modeling method of thermal resistance network model thereof Download PDF

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CN112290773A
CN112290773A CN202011176936.1A CN202011176936A CN112290773A CN 112290773 A CN112290773 A CN 112290773A CN 202011176936 A CN202011176936 A CN 202011176936A CN 112290773 A CN112290773 A CN 112290773A
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chip
emitter
collector
power module
pressure
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CN112290773B (en
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李武华
常垚
罗皓泽
周宇
朱安康
李楚杉
何湘宁
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Zhejiang University ZJU
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/08—Thermal analysis or thermal optimisation

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The invention discloses a pressure-change crimping type packaging power module and a modeling method of a thermal resistance network model thereof, wherein the pressure-change crimping type packaging power module comprises a collector radiator, a collector insulating film, a collector copper bar, a through-flow chip unit, an insulating ballast clamp, an insulating film between the copper bars, an emitter copper bar, an emitter insulating film and an emitter radiator which are sequentially arranged from top to bottom; the thermal resistance modeling method is used for decoupling the composite thermal resistance network by utilizing an equivalent conversion rule of multi-port topology in a linear network to obtain chip self-heating equivalent thermal impedance and chip-to-chip coupling equivalent thermal impedance; the invention adopts the pressure-variable packaging structure, realizes the pressure-variable packaging in a wide range, solves the problem that the pressure of the conventional pressure-variable packaging power module is difficult to flexibly adjust, establishes a pressure-variable thermal resistance network corresponding to the module and an equivalent simplified model thereof, and reflects the operation and coupling rule of the chip junction temperature in the pressure-variable packaging power module.

Description

Voltage-variable compression joint type packaging power module and modeling method of thermal resistance network model thereof
Technical Field
The invention belongs to the technical field of power electronic devices, and particularly relates to a voltage-variable compression joint type packaging power module and a modeling method of a thermal resistance network model thereof.
Background
The compression joint type packaging power module has the advantages of short circuit mode failure, low parasitic inductance, double-sided heat dissipation and the like, and is widely applied to high-capacity converter equipment such as a metallurgical rolling mill, high-voltage direct-current transmission, track traction and the like. The conventional compression joint type packaging power module mainly adopts a centralized compression joint stress mode, and as shown in fig. 1, the conventional typical centralized compression joint type packaging module comprises a spring steel plate 1, a hemispherical steel cup 2, a high-strength steel plate 3, a radiator 4, a compression joint type power module 5, a yoke plate 6, a copper bar 7, lubricating liquid 8 such as silicon oil and the like. The spring steel plate 1 plays a role in buffering thermal expansion stress, the hemispherical steel cup 2 is used for ensuring that pressure is vertical to the surface of the compression joint type power module 5, the high-strength steel plate 3 is used for ensuring that the pressure is uniformly distributed on the radiator 4 and the compression joint type power module 5, the copper bar 7 is connected with an electric port and a compression joint packaging module, and lubricating liquid 8 such as silicon oil is used for reducing contact thermal resistance and avoiding corrosion; the spring steel plate 1 and the yoke plate 6 are symmetrical about the whole crimping and packaging module, mechanical stress and deformation are generated by extruding the hemispherical steel cup 2, and surrounding nuts and studs are fixedly meshed to maintain the deformation.
This centralized crimping technique facilitates the connection of modules in a direction perpendicular to the surface to increase power ratings, however, the following disadvantages are not sufficient to optimize: (1) because each compression joint type encapsulation power module has different dimensional tolerance and different stress characteristics at different positions in the compression joint encapsulation module, each module needs to flexibly adjust the compression joint force to adapt to the requirements of the compression joint module, but the stress of a single module is difficult to adjust by a centralized compression joint technology; (2) the existing compression joint type packaging power module adopts a closed structure, and a centralized compression joint technology has compact characteristics, is difficult to carry out direct junction temperature measurement, and cannot reflect the thermal stress distribution of each module in the centralized compression joint packaging module; (3) a plurality of through-flow chip units in the compression joint type packaging power module are connected in parallel, the self-heating effect and the thermal coupling effect of the chips are related to pressure, and the centralized compression joint technology is difficult to reflect the mutual coupling thermal behavior of the chips under the working condition of variable mechanical stress.
Disclosure of Invention
In view of the above disadvantages, a first aspect of the present invention provides a pressure-varying crimping type packaged power module, in which centralized crimping jigs coaxial with the crimping type packaged power module in fig. 1 are arranged in a distributed manner, and the volume of the centralized crimping jigs is reduced based on the size of a chip and is distributed around a through-flow chip unit, so as to adjust the mechanical pressure applied to each chip; simultaneously, connecting the emitter of the through-flow chip unit with the discrete copper bar, and reflecting the thermal stress of the chip by the thermal stress of the port of the copper bar; the thermal behavior between the chips coupled with each other is analyzed through the voltage-variable composite thermal network corresponding to the module.
In order to achieve the purpose, the pressure-variable compression joint type packaging power module comprises one or a plurality of through-flow chip units which are connected in parallel, an insulation ballast clamp, and a collector radiator, a collector insulating film, a collector copper bar, an insulating film among the copper bars, an emitter copper bar, an emitter insulating film and an emitter radiator which are sequentially arranged in a close fit manner from top to bottom;
holes with the same size and aligned positions are formed in the collector radiator, the collector insulating film, the collector copper bar, the insulating film among the copper bars, the emitter copper bar, the emitter insulating film and the emitter radiator, and the insulation ballast clamp penetrates through the holes from top to bottom and is respectively matched and fastened with the collector radiator and the emitter radiator through threads;
the corresponding positions of the lower surface of the collector copper bar and the upper surface of the emitter copper bar are provided with right positioning concave surfaces, the positioning concave surfaces are used for installing and positioning the through-flow chip unit, the upper surface of the through-flow chip unit is tightly attached to the positioning concave surface of the collector copper bar, and the lower surface of the through-flow chip unit is tightly attached to the positioning concave surface of the emitter copper bar.
Preferably, the through-flow chip unit comprises a collector electrode molybdenum sheet, a chip, an emitter electrode molybdenum sheet and an emitter electrode aluminum sheet which are sequentially and closely arranged from top to bottom; the length and width of the positioning concave surface on the lower surface of the collector copper bar are consistent with the sizes of a collector molybdenum sheet and a chip in the through-flow chip unit, and the length and width of the positioning concave surface on the upper surface of the emitter copper bar are consistent with the sizes of an emitter molybdenum sheet and an aluminum gasket in the through-flow chip unit; and a collector (cathode or K pole) and an emitter (anode or A pole) of the through-flow chip unit are respectively and tightly attached to the concave surfaces of the collector copper bar and the emitter copper bar.
Preferably, the insulation ballast clamp is made of polyether ether ketone, the insulation ballast clamp uniformly surrounds the through-flow chip unit, and the whole power module is fixed by fastening and meshing the insulation ballast clamp with the threads of the collector radiator and the emitter radiator through applying torque.
Preferably, the mechanical pressure born by each area of the circulating chip unit can be changed by adjusting the torque of the insulating ballast clamp arranged around the circulating chip unit, and the pressure of each area is consistent; when the pressure welding type packaging power module comprises a plurality of parallel through-flow chip units, the pressure intensity among the parallel through-flow chip units is consistent by adjusting the torque of an insulation ballast clamp arranged around the through-flow chip units.
Preferably, the collector copper bar is a single copper plate and is in pressure joint with all the through-current chip units; the number of the emitter copper bars is the same as that of the through-flow chip units, when a plurality of emitter copper bars are arranged, the emitter copper bars are not in contact with each other and are arranged between the insulating films among the copper bars and the insulating films of the emitters independently, each through-flow chip unit is only in pressure connection with one emitter copper bar so as to ensure that the parallel through-flow chip units are only thermally coupled at collectors, and the junction temperature of each through-flow chip unit can be observed at the emitters and is not influenced by the coupling effect.
Preferably, the chip may be a Si IGBT, a Si diode, a SiC MOS, a SiC SBD, or the like.
Preferably, the collector radiator and the emitter radiator are made of aluminum sheets, and the thickness of the collector radiator and the emitter radiator is 3-5 cm.
Preferably, a positioning concave surface with the same size as the collector side of the through-flow chip unit is etched on the surface of the collector copper bar in contact with the through-flow chip unit and is attached to one side of the collector of the through-flow chip unit by pressure; and a positioning concave surface with the same size as the side of the emitter of the through-flow chip unit is etched on the surface of the emitter copper bar in contact with the through-flow chip unit and is attached to one side of the emitter of the through-flow chip unit by pressure.
Preferably, the collector insulating film, the emitter insulating film and the inter-copper-bar insulating film are made of polyethylene terephthalate and have a thickness of 50 μm to 100 μm.
Preferably, the through-flow chip unit is a hierarchical assembly formed by a collector molybdenum sheet, a chip, an emitter molybdenum sheet and an aluminum gasket; the thickness of the collector molybdenum sheet is 200-300 μm, and the thickness of the aluminum sheet is 100-200 μm.
Preferably, the insulation ballast clamp is made of high-strength polyetheretherketone, is formed in a flat-head screw shape, penetrates through all components except the through-flow chip unit, and has a screw head flush with the upper surface of the collector radiator and a stud bottom flush with the lower surface of the collector radiator.
The invention provides a modeling method of a thermal resistance network model of the voltage-variable compression joint type packaging power module. Which comprises the following steps:
step 1: establishing a pressure-variable heat transfer network suitable for a single-through-flow chip unit of the crimping type power module by considering the coupling corresponding relation of contact pressure and heat transfer effect between contact levels based on the through-flow unit and double-sided heat dissipation boundary conditions of the entity pressure-variable crimping type power module;
step 2: for the pressure-variable heat transfer network of the single-through-current chip unit established in the step 1, combining the parallel connection characteristics of the chips of the crimping type power module, mutually coupling the pressure-variable heat transfer networks of each single-through-current chip unit in the crimping type power module by introducing a parallel thermal coupling effect, and establishing a pressure-variable heat transfer network suitable for multi-chip coupling of the crimping type power module;
and step 3: and (3) decoupling the pressure deformation heat transfer network suitable for the multi-chip coupling of the crimping type power module by utilizing a circuit network equivalent conversion method according to the network symmetry of the multi-chip coupling heat transfer network established in the step (2), and establishing the equivalent pressure deformation heat transfer network suitable for the integral crimping type power module.
Compared with the prior art, the invention has the following advantages:
(1) the invention adopts the pressure-variable compression joint type packaging technology, solves the problem that the compression joint force on a plurality of parallel chips in the original compression joint type power module is difficult to adjust, and improves the flexibility of adjusting the compression joint force of each chip among the modules.
(2) The invention adopts the series-connection type insulation ballast clamp, avoids the arrangement of an external clamp and the influence on the crimping type power module, and improves the power density of the power module.
(3) The thermal resistance network modeling method provided by the invention considers the contact thermal resistance effect and the chip thermal coupling effect, integrates the contact thermal resistance effect and the chip thermal coupling effect into a pressure-variable thermal network model, and performs topology simplification through network conversion, overcomes the difficulty of complex analysis of a composite thermal resistance network, can clarify the application effect of the pressure-variable compression joint type power module, and clearly reflects the relation between the thermal stress coupling effect and the mechanical stress between parallel chips.
Drawings
Fig. 1 is a schematic diagram of a typical conventional centralized compression molding package module;
in the figure: 1-spring steel plate, 2-hemispherical steel cup, 3-high-strength steel plate, 4-radiator, 5-compression joint type power module, 6-yoke plate, 7-copper bar, 8-lubricating fluid such as silicon oil and the like.
FIG. 2 is a schematic diagram of the pressure-variable thermal resistance network model.
Fig. 3 is a schematic cross-sectional view of an embodiment of a voltage-variable crimp-type packaged power module according to the present invention.
Fig. 4 is a schematic top view of an embodiment of a crimp-type packaged power module according to the present invention.
Fig. 5 is a simplified schematic diagram of the piezoelectric variable thermal resistance network switching.
Detailed Description
For a better understanding of the present invention, reference will now be made in detail to the present embodiments of the invention as illustrated in the accompanying drawings.
In the description of the present invention, it should be noted that a series of terms describing an orientation, such as "upper", "lower", "left", "right", "inner", "outer", "vertical", "horizontal", etc., are used to indicate an orientation or positional relationship based on the drawings, and are used only for convenience of description of the present invention, and do not indicate or imply that a device or component of the present invention must have a specific orientation or be constructed or operated in a specific orientation, and thus, should not be construed as limiting the present invention.
As shown in fig. 3, a schematic structural cross-sectional view of a voltage-transformation compression-type packaged power module according to an embodiment of the present invention is provided. Specifically, the collector radiator, the collector insulating film, the collector copper bar, the insulating film between the copper bars, the emitter copper bar, the emitter insulating film and the emitter radiator are provided with holes with the same size and the aligned positions, and particularly, flat-end internal threads are chiseled in the collector radiator.
And (3) excavating square positioning concave surfaces on the collector copper bar and the emitter copper bar, wherein the length and width of the concave surface on the lower surface of the collector copper bar are kept consistent with the size of a collector molybdenum sheet (or a chip) in the through-flow chip unit, and the length and width of the concave surface on the upper surface of the emitter copper bar are kept consistent with the size of an emitter molybdenum sheet (or an aluminum gasket) in the through-flow chip unit. The collector (cathode or K pole) and the emitter (anode or A pole) of the chip are respectively tightly attached to the concave surfaces of the collector copper bar and the emitter copper bar.
In a specific embodiment of the invention, the collector copper bar is a single copper plate, and is in pressure connection with all the through-current chip units; the number of the emitter copper bars is the same as that of the through-flow chip units, the two emitter copper bars are two, the two emitter copper bars are not in contact with each other, are separated by air and are arranged between an insulating film between the copper bars and an emitter insulating film independently, each through-flow chip unit is only in pressure connection with one emitter copper bar so as to ensure that the parallel through-flow chip units are only thermally coupled at a collector electrode, and the junction temperature of each through-flow chip unit can be observed at the emitter electrode and is not influenced by the coupling effect.
In one embodiment of the invention, a flat head screw is used as an insulation ballast clamp, and is only provided with external threads at two ends, and the other area is a polished rod; the length of the area where the threads are arranged at the two ends of the flat head screw is respectively the same as the thickness of the collector radiator and the emitter radiator. The flat head surface of the flat head screw is flush with the upper surface of the collector radiator, and the bottom surface of the stud is flush with the lower surface of the emitter radiator. And a flat-head screw penetrates through the punched through holes of the components, so that the flat-head external threads and the flat-head internal threads of the collector radiator are mutually occluded and fixed, the screw is screwed down by using the same torque by using a torque screwdriver, and the torque is converted into mechanical pressure to compress the whole power module.
As shown in fig. 3, in an embodiment of the present invention, a mounting hole for mounting the through-current chip unit is formed in the insulating film between the copper bars, and the size and shape of the mounting hole are matched with those of the through-current chip unit, so that the insulating film between the copper bars and the through-current chip unit are tightly attached to each other, thereby achieving a good insulating effect. In one embodiment of the invention, since the size of the chip in the through-flow chip unit is larger than that of the emitter molybdenum sheet, the mounting hole of the insulating film between the copper bars is designed to have a protruding step surrounding the periphery of the hole, so that the shape of the hole is matched and attached to the through-flow chip unit, and in addition, the interface between the chip and the emitter molybdenum sheet is positioned in the insulating film between the copper bars.
As shown in fig. 4, a top view of the present embodiment is shown, which illustrates the structural relationship between the parallel chips and the press-fit packaged power module. The parallel chip is parallel to the collector copper bar, the emitter copper bar and the radiator. The insulated ballast clamps made of grub screws are perpendicular to the chip, and in this example, 13 crimping clamps are distributed in sequence. And circular connecting ports are respectively manufactured on the collector copper bar and the emitter copper bar and are used for connecting external electric terminals.
The invention further provides a modeling method of a thermal resistance network model of the pressure-variable compression joint type packaging power module, which comprises the following steps:
step 1: establishing a pressure-variable heat transfer network suitable for a single-through-flow chip unit of the crimping type power module based on a through-flow chip unit and a double-sided heat dissipation boundary condition of the entity pressure-variable crimping type power module by considering a coupling corresponding relation of contact pressure and a heat transfer effect between contact levels;
step 2: for the pressure-variable heat transfer network of the single-through-current chip unit established in the step 1, combining the parallel connection characteristics of the chips of the crimping type power module, mutually coupling the pressure-variable heat transfer networks of each single-through-current chip unit in the crimping type power module by introducing a parallel thermal coupling effect, and establishing a pressure-variable heat transfer network suitable for multi-chip coupling of the crimping type power module;
and step 3: and (3) decoupling the pressure deformation heat transfer network suitable for the multi-chip coupling of the crimping type power module by utilizing a circuit network equivalent conversion method according to the network symmetry of the multi-chip coupling heat transfer network established in the step (2), and establishing the equivalent pressure deformation heat transfer network suitable for the integral crimping type power module.
Considering the contact thermal resistance existing in each heat dissipation path under the boundary condition of double-sided heat dissipation, the heat transfer impedance expression of the collector (cathode or K pole) and the emitter (anode or A pole) of the corresponding single-pass chip unit is as follows:
Figure BDA0002748961780000061
in the formula (1), Zth_C、Zth_EThe overall thermal impedance from the collector and emitter of the single-pass chip unit, which is respectively packaged in a crimping manner, to the ambient temperature node; zth_CnCorresponding to the thermal resistance, R, of the n-th layer in the heat transfer path from the chip to the collector terminalth_cont_CnThe thermal resistance of the nth layer in a heat transfer path from the chip to the collector terminal is correspondingly formed; zth_EmCorresponding to the m-th layer thermal resistance, R, on the chip-to-emitter end heat transfer pathth_cont_EmThe thermal contact resistance of the mth layer in the heat transfer path from the chip to the emitter terminal is correspondingly set; zth_HS_C、Zth_HS_EThermal impedances of the collector and emitter heat sinks, respectively; n and m are positive integers.
The crimping type packaging power module comprises two through-current chip units which are connected in parallel; considering the resistance of the thermal coupling impedances of two parallel through-current chip units in the pressure-bonded package at the collector side and the emitter side, which results in the self-coupling of the thermal network of the through-current unit and its coupling, the expression of the corresponding equivalent thermal transfer impedance is:
Figure BDA0002748961780000071
in the formula (2), Tj_a、Tj_bJunction temperatures, T, of chip a and chip b in adjacent through-current chip units in a press-fit packageamIs ambient temperature, PaThen is the loss of chip a, Zeq_aa、Zeq_abThe equivalent thermal impedance of chip a to self coupling and the equivalent thermal impedance of chip a to b coupling are respectively.
Further, considering that the chip a and the chip b are symmetrical in geometric characteristics, and only the chip a is used as a heating source by utilizing network symmetry, the thermal resistance network is a composite network comprising a pi-type circuit and a T-type circuit; the number of network impedances is reduced by the mutual conversion of the n-type circuit and the T-type circuit through impedance parallel connection, and finally the network impedances are simplified into a single impedance network.
As shown in FIG. 2, P in FIG. 2a-heat loss by chip a, Tref-ambient temperature, Tj_aJunction temperature of chip a, Tj_b-junction temperature of die b, and overall equivalent voltage-variable thermal impedance for bonding die a to emitter-side housing by Za1Z represents the equivalent voltage-dependent thermal impedance of the emitter-side case to which the chip b is bondedb1The thermal impedance of the emitter-side heat sink of die a is shown as Za2The thermal impedance of the emitter-side heat sink of die b is denoted as Zb2Z is equivalent voltage-variable thermal impedance for bonding the chip a to the collector-side casea3Z represents the equivalent voltage-dependent thermal impedance of the chip b bonded to the collector-side caseb3As shown, the thermal impedance of the heat sink on the collector side of chip a is represented by Za4The thermal impedance of the collector-side heat sink of chip b is represented as Zb4The corresponding thermally coupled impedance at the emitter side is denoted as Zc1The corresponding thermally coupled impedance at the collector side is denoted as Zc2。
Equivalent voltage-variable thermal impedance Za1Or Zb1The sum of the thermal impedance and the contact thermal resistance of all components on the heat dissipation path from the chip a or the chip b to the emitter copper bar is shown, and the equivalent voltage-variable thermal impedance Za3Or Zb3The sum of the thermal resistance and the contact resistance of all components on the heat dissipation path from chip a or chip b to the collector copper bar is shown.
Zc1Or Zc2Representing the thermal coupling resistance that a copper bar in contact with a through-flow chip unit can generate by conducting the heat of an adjacent through-flow chip unit.
Based on the composite thermal resistance network model of fig. 2, equivalent conversion of the thermal resistance network is performed to obtain a single thermal resistance network with final decoupling simplification.
As shown in fig. 5, a simplified conversion diagram of the voltage-variable thermal resistance network corresponding to the present embodiment is provided. The conversion method can decouple the composite thermal resistance network formed by coupling between the chips and simplify the composite thermal resistance network into a single thermal resistance network. First, the thermal resistance network in FIG. 5(I) is organized into the form of FIG. 5(II), and the impedance Z can be foundc1、Zb1、Zb2Forming a T-network, impedance Zc2、Zb3、Zb4A T-type network is also constructed. Converting the two networks into Z 'through T-II type conversion'π12、Z’π23、Z’π31And Zπ12、Zπ23、Zπ31The pi-type network is constructed as shown in fig. 5 (III). It can be seen that there are three groups of parallel impedances Z in FIG. 5(III)a2、Z’π31And Za4、Z’π23And Z'π23、Zπ31. Connecting these three sets of impedances in parallel can reduce the amount of impedance in the network, resulting in a thermal resistance network as in FIG. 5(IV), where Z isa2、Z’π31Are connected in parallel to form Zra2，Za4、Z’π23Are connected in parallel to form Zra4，Z’π23、Zπ31Are connected in parallel to form Zr5. It can be further found that in the simplified thermal resistance network, the impedance Za1、Zra2、Z’π12 forming a T-network with the same impedance Za3、Zra4、Zπ12Form T-type network, and convert the two T-type networks into Z-type network via T-pi conversiony12、Zy23、Zy31And Zx12、Zx23、Zx31The result of the n-type network is shown in fig. 5 (V). It can be seen that the thermal resistance network in FIG. 5(V), where Z is shown to be further simplifiedr5、Zy31、Zx23Can be connected in parallel as Z1，Zx31And Zy23Can be connected in parallel as Z2，Zx12And Zy12Can be connected in parallel as Z3Thus, the final reduction result as shown in fig. 5(VI) can be obtained. As shown in FIG. 5(VI), the self-heating equivalent impedance generated by the heat loss of the chip a itself is Zaa＝(Z1+Z2)||Z3The coupling equivalent thermal impedance of the thermal loss of chip a to chip b is Zab＝Zaa*Z1/(Z1+Z2). Therefore, the composite thermal resistance network shown in the figure 5(I) is reduced and decoupled through equivalent transformation of the thermal resistance network, and finally the simple thermal resistance network shown in the figure 5(VI) is obtained. Under the condition that the parameters of the composite voltage-variable thermal resistance network are known, the self-heating and coupling equivalent thermal impedance of each chip in the compression joint type packaging power module can be obtained through the transformation of the thermal resistance network, and the pressure stress-thermal stress coupling analysis in the compression joint type packaging power module is facilitated.
In summary, compared with the traditional centralized stress crimping type rate module, the pressure-variable crimping type packaging power module provided by the invention realizes flexible adjustment of stress of each chip in the crimping type packaging power module through distributed load. The packaging power module can adjust the mechanical stress of a single chip through torque and can also balance the stress distribution among chips connected in parallel; the volume of the crimping clamp is reduced, and the high-power density design is realized; the integrated structure of the laminated copper bar is adopted, stray inductance is effectively reduced, and meanwhile, the integrated copper bar on one side of the emitting electrode is utilized to directly reflect the thermal stress of the chip. Aiming at the pressure-variable compression-type packaging power module structure, the pressure-variable compression-type packaging power module model modeling method simplifies a chip-coupled composite thermal resistance network into a decoupled reduced-order thermal resistance network through equivalent transformation of the thermal resistance network, and is convenient for directly calculating the influence relationship of self-heating of the chip and coupling thermal impedance under variable mechanical stress.
The embodiments described above are presented to enable a person having ordinary skill in the art to make and use the invention. It will be readily apparent to those skilled in the art that various modifications to the above-described embodiments may be made, and the generic principles defined herein may be applied to other embodiments without the use of inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications to the present invention based on the disclosure of the present invention within the protection scope of the present invention.

Claims (10)

1. A pressure-variable compression joint type packaging power module is characterized by comprising one or a plurality of through-flow chip units which are connected in parallel, an insulation ballast clamp, and a collector radiator, a collector insulating film, a collector copper bar, an insulating film among the copper bars, an emitter copper bar, an emitter insulating film and an emitter radiator which are sequentially arranged in a close fit manner from top to bottom;
holes with the same size and aligned positions are formed in the collector radiator, the collector insulating film, the collector copper bar, the insulating film among the copper bars, the emitter copper bar, the emitter insulating film and the emitter radiator, and the insulation ballast clamp penetrates through the holes from top to bottom and is respectively matched and fastened with the collector radiator and the emitter radiator through threads;
the corresponding positions of the lower surface of the collector copper bar and the upper surface of the emitter copper bar are provided with right positioning concave surfaces, the positioning concave surfaces are used for installing and positioning the through-flow chip unit, the upper surface of the through-flow chip unit is tightly attached to the positioning concave surface of the collector copper bar, and the lower surface of the through-flow chip unit is tightly attached to the positioning concave surface of the emitter copper bar.
2. The voltage-variable crimp-type packaged power module according to claim 1, wherein the through-flow chip unit comprises a collector molybdenum sheet, a semiconductor chip (hereinafter, referred to as a chip), an emitter molybdenum sheet and an emitter aluminum sheet, which are closely arranged from top to bottom in sequence; the length and width of the positioning concave surface on the lower surface of the collector copper bar are consistent with the sizes of a collector molybdenum sheet and a chip in the through-flow chip unit, and the length and width of the positioning concave surface on the upper surface of the emitter copper bar are consistent with the sizes of an emitter molybdenum sheet and an aluminum gasket in the through-flow chip unit; and the collector and the emitter of the through-flow chip unit are respectively and tightly attached to the concave surfaces of the collector copper bar and the emitter copper bar.
3. The voltage-varying crimp-type packaged power module according to claim 1, wherein the insulation ballast fixture is made of polyetheretherketone, and the insulation ballast fixture is uniformly wound around the through-flow chip unit and is fastened and engaged with the threads of the collector radiator and the emitter radiator by applying torque to fix the whole power module.
4. The pressure-variable compression-type packaged power module according to claim 3, wherein the mechanical pressure applied to each area of the through-flow chip unit can be changed by adjusting the torque of an insulating ballast clamp arranged around the through-flow chip unit, and the areas are uniformly compressed; when the pressure welding type packaging power module comprises a plurality of parallel through-flow chip units, the pressure intensity among the parallel through-flow chip units is consistent by adjusting the torque of an insulation ballast clamp arranged around the through-flow chip units.
5. The voltage-variable crimp-type packaged power module according to claim 1, wherein the collector copper bar is a single copper plate, and is crimped with all through-current chip units; the number of the emitting electrode copper bars is the same as that of the through-flow chip units, when a plurality of emitting electrode copper bars are arranged, the plurality of emitting electrode copper bars are not in contact with each other and are arranged between the insulating films among the copper bars and the emitting electrode insulating films independently, and each through-flow chip unit is only in compression joint with one emitting electrode copper bar.
6. The pressure-deformable crimp-type packaged power module according to claim 1, wherein the chip is a SiIGBT, a Si diode, a SiC MOS or a SiC SBD.
7. The modeling method of the voltage-varying thermal resistance network model of the crimp-type packaging power module according to claim 1 is characterized by comprising the following steps:
step 1: establishing a pressure-variable heat transfer network suitable for a single-through-flow chip unit of the crimping type power module by considering the coupling corresponding relation of contact pressure and heat transfer effect between contact levels based on the through-flow unit and double-sided heat dissipation boundary conditions of the entity pressure-variable crimping type power module;
step 2: for the pressure-variable heat transfer network of the single-through-current chip unit established in the step 1, combining the parallel connection characteristics of the chips of the crimping type power module, mutually coupling the pressure-variable heat transfer networks of each single-through-current chip unit in the crimping type power module by introducing a parallel chip thermal coupling effect, and establishing the pressure-variable heat transfer network suitable for multi-chip coupling of the crimping type power module;
and step 3: and (3) decoupling the pressure deformation heat transfer network suitable for the multi-chip coupling of the crimping type power module by utilizing a circuit network equivalent conversion method according to the network symmetry of the multi-chip coupling heat transfer network established in the step (2), and establishing the equivalent pressure deformation heat transfer network suitable for the integral crimping type power module.
8. The modeling method of voltage-varying type thermal resistance network model according to claim 7, wherein the thermal contact resistance existing in each heat dissipation path under the boundary condition of double-sided heat dissipation is considered, and the heat transfer impedance expression of the collector and emitter of the chip in the corresponding single-pass chip unit is:
Figure FDA0002748961770000021
in the formula (1), Zth_C、Zth_EThe overall thermal impedance from the collector and emitter of the chip in the single-pass chip unit packaged in a crimping manner to the ambient temperature node is respectively; zth_CnCorresponding to the thermal resistance, R, of the n-th layer in the heat transfer path from the chip to the collector terminalth_cont_CnThe thermal resistance of the nth layer in a heat transfer path from the chip to the collector terminal is correspondingly formed; zth_EmCorresponding to the m-th layer thermal resistance, R, on the chip-to-emitter end heat transfer pathth_cont_EmThe thermal contact resistance of the mth layer in the heat transfer path from the chip to the emitter terminal is correspondingly set; zth_HS_C、Zth_HS_EThermal impedances of the collector and emitter heat sinks, respectively; n and m are positive integers.
9. The modeling method of voltage-varying thermal resistance network model according to claim 7, wherein the press-fit type packaged power module comprises two through-current chip units connected in parallel; considering the resistance of the thermal coupling impedances of two parallel through-current chip units in the pressure-bonded package at the collector side and the emitter side, which results in the self-coupling of the thermal network of the through-current chip unit and its coupling, the expression of the corresponding equivalent thermal transfer impedance is:
Figure FDA0002748961770000031
in the formula (2), Tj_a、Tj_bJunction temperatures, T, of the chip a and the chip b in two through-current chip units connected in parallel in a pressure-bonded packageamIs ambient temperature, PaThen is the loss of chip a, Zeq_aa、Zeq_abThe equivalent thermal impedance of chip a to self coupling and the equivalent thermal impedance of chip a to b coupling are respectively.
10. The modeling method of voltage-variable thermal resistance network model according to claim 9, wherein the thermal resistance network is configured as a composite network including pi-type circuit and T-type circuit by taking the geometric characteristics of chip a and chip b into consideration and using the network symmetry with only chip a as a heat source; the number of network impedances is reduced by the mutual conversion of the n-type circuit and the T-type circuit through impedance parallel connection, and finally the network impedances are simplified into a single impedance network.
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