CN112953170A - Water-cooling high-power full-bridge unit based on crimping type IGCT - Google Patents
Water-cooling high-power full-bridge unit based on crimping type IGCT Download PDFInfo
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- CN112953170A CN112953170A CN202110253316.1A CN202110253316A CN112953170A CN 112953170 A CN112953170 A CN 112953170A CN 202110253316 A CN202110253316 A CN 202110253316A CN 112953170 A CN112953170 A CN 112953170A
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- 238000001816 cooling Methods 0.000 title claims abstract description 56
- 238000002788 crimping Methods 0.000 title claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 48
- 238000003825 pressing Methods 0.000 claims description 7
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 2
- 241001672018 Cercomela melanura Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005493 welding type Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
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- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention discloses a water-cooling high-power full-bridge unit based on a crimping type IGCT (integrated gate commutated thyristor), which comprises: a power supply module; the IGCT full-bridge power module is arranged below the power module; the direct current capacitor module is connected with the IGCT full-bridge power module through a connecting bus bar. Through the unit, the modular design and the water-cooling heat dissipation technology are adopted, so that the compact and attractive structure is met; electromagnetic compatibility, reasonable circuit distribution; the unit is convenient to install and maintain as a whole, an internal module and the unit are convenient to maintain; the device has the characteristics of strong through-current capability, low on-state voltage, short circuit when failure, high series reliability and the like, and the IGCT devices have small difference, thereby ensuring series voltage sharing to a certain extent; designing in an integrated manner; the heat dissipation effect is improved, and the water-cooled radiator has good isothermal property; the invention has the advantages of small occupied area, high reliability, strong controllability, technical price and the like, and has good prospect.
Description
Technical Field
The invention belongs to the field of power electronics, and particularly relates to a water-cooling high-power full-bridge unit based on a crimping type IGCT.
Background
The power semiconductor device is the foundation of a power electronic complete device, and directly influences the cost, efficiency, reliability and the like of the power semiconductor device. The existing high-power silicon-based semiconductor technology comprises a module-packaged Insulated Gate Bipolar Transistor (IGBT), a press-packaged IGBT and a press-packaged Integrated Gate Commutated Thyristor (IGCT), wherein the module-packaged IGBT has more applications in the field of medium and low voltage, and the limitation on the installation condition is less. However, the module packaging device has a large thermal resistance, and how to dissipate heat for the module packaging device is a problem to be solved at present.
Disclosure of Invention
In view of the above technical problems in the related art, the present invention provides a water-cooled high-power full-bridge unit based on a crimping-type IGCT, which can overcome the above disadvantages in the prior art.
In order to achieve the technical purpose, the technical scheme of the invention is realized as follows:
a water-cooling high-power full-bridge unit based on crimping formula IGCT, this unit includes: a power supply module; the IGCT full-bridge power module is arranged below the power module; the direct current capacitor module is connected with the IGCT full-bridge power module through a connecting bus; wherein, the IGCT is a press-fit packaging integrated grid commutating thyristor.
Further, the IGCT full-bridge power module comprises: a power module frame; the IGCT module is arranged on the power module frame; the diode module is arranged on the power module frame; the IGCT module and the diode module are connected through the connecting bus bar.
Further, the IGCT module includes: the IGCT drive board is provided with an IGCT device; the IGCT device is arranged between every two water-cooled radiators; wherein, the IGCT device is in a compression joint type.
Further, the diode module includes: a diode device or a resistor device is arranged between every two water-cooled radiators; the resistor device is in a compression joint type.
Further, a butterfly spring is arranged on the outer side of the water-cooling radiator; the outer side of the belleville spring is provided with a string pressing plate; and the rotating top bolt penetrates through a bolt hole in the middle of the string pressing plate, and rotates to compress the belleville spring, and the belleville spring tightly presses the IGCT device, the water-cooled radiator, the diode device and the resistor device.
Furthermore, a control panel is arranged on one side of the IGCT device and used for controlling the IGCT device.
Furthermore, a unit water pipe is connected to the water-cooling radiator; one end of the unit water pipe is connected with the outside, and the other end of the unit water pipe is connected with the water-cooling radiator or the water-cooling reactor; the water-cooling reactor is arranged on the water-cooling radiator of the diode module; the capacitor is arranged on the water-cooling radiator of the diode module; the unit water pipe comprises a main water pipe and a plurality of thin water pipes, and the thin water pipes are branches of the main water pipe.
Further, the power module supplies power to the IGCT device.
Further, IGCT devices have pressure ranges of 36-44 kN.
Furthermore, the IGCT module comprises four IGCT devices and five water-cooled radiators; the four IGCT devices and the five water-cooled radiators are respectively arranged in parallel; the diode module comprises five diode devices, a resistor device and seven water-cooling radiators; seven water-cooling radiators are arranged in parallel, one diode device is arranged between every two of the first six water-cooling radiators, and one resistor device is arranged between the sixth water-cooling radiator and the seventh water-cooling radiator.
The invention has the beneficial effects that: through the unit, a water-cooling high-power full-bridge unit based on the compression-joint type IGCT is provided, the unit adopts a modular design and a water-cooling technology, and the requirements for compact structure and attractive appearance are met; electromagnetic compatibility, reasonable circuit distribution; the unit is convenient to install and maintain as a whole, an internal module and the unit are convenient to maintain; the power density is improved and the failure rate is reduced; the electronic power core device is an IGCT device, and has the characteristics of strong through-current capacity, low on-state voltage, short circuit when failure, high series reliability and the like, the IGCT device has small difference, and series voltage sharing is ensured to a certain extent; designing in an integrated manner; the unit uses the water-cooling radiator to radiate heat, the heat conductivity of the water-cooling radiator is tens of times higher than that of a common radiator, the heat is taken away more quickly, the radiating effect is improved, and the water-cooling radiator has good isothermal property; the invention has the advantages of small occupied area, high reliability, strong controllability, technical price and the like, and has good prospect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 shows a front three-dimensional view of a water-cooling high-power full-bridge unit based on a crimping-type IGCT according to an embodiment of the invention;
FIG. 2 shows a back three-dimensional view of a water-cooling high-power full-bridge unit based on a compression-type IGCT according to an embodiment of the invention;
FIG. 3 illustrates a three-dimensional diagram of an IGCT full-bridge power module according to an embodiment of the invention;
FIG. 4 illustrates a side cutaway view of an IGCT full-bridge power module according to an embodiment of the present invention;
FIG. 5 illustrates a three-dimensional view of an IGCT module according to an embodiment of the present invention;
FIG. 6 shows a three-dimensional view of a diode module according to an embodiment of the invention;
FIG. 7 shows a schematic structural diagram of an IGCT module according to an embodiment of the invention;
fig. 8 shows a schematic structural diagram of an IGCT device according to an embodiment of the present invention.
In the figure: 1. IGCT full-bridge power module, 2, power module, 3, direct current capacitance module, 4, connecting bus bar, 5, IGCT module, 6, diode module, 7, control panel, 8, unit water pipe, 9, power module frame, 10, capacitance, 11, water-cooling reactance, 12, IGCT device, 13, diode device, 14, water-cooling radiator, 15, belleville spring, 16, rotation top bolt, 17, resistance device, 18, pressure cluster board.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 3, a water-cooled high-power full-bridge unit based on a crimping-type IGCT includes: a power supply module 2; the IGCT full-bridge power module 1 is arranged below the power module 2; the direct current capacitor module 3 is connected with the IGCT full-bridge power module 1 through a connecting bus bar 4; wherein, the IGCT is a press-fit packaging integrated grid commutating thyristor. The connecting busbar 4 is a module connecting busbar, and the connecting busbar 4 has the advantages of compact structure, uniform current distribution, low stray inductance and the like.
In some embodiments of the present invention, as shown in fig. 4, the IGCT full-bridge power module 1 comprises: a power module frame 9; an IGCT module 5 mounted on the power module frame 9; a diode module 6 mounted on the power module frame 9; the IGCT module 5 and the diode module 6 are connected through the connecting bus bar 4.
In some embodiments of the present invention, as shown in fig. 5, 7 and 8, the IGCT module 5 comprises: an IGCT drive board, on which an IGCT device 12 is arranged; before the IGCT device 12 is pressed, the flatness of the collector surface of the IGCT device 12, the flatness and the roughness of the radiator surface and the form and position tolerance between the upper IGCT device 12 and the lower IGCT device 12 need to be guaranteed, and the pressure requirement range of the IGCT device is 36-44 kN. Water-cooled radiators 14 installed on both sides of the IGCT device 12; the radiator comprises a plurality of water-cooled radiators 14, wherein an IGCT device 12 is arranged between every two water-cooled radiators 14; wherein the IGCT device 12 is a compression joint type. The heat conductivity of the water-cooling radiator 14 is tens of times higher than that of a common radiator, so that heat can be taken away more quickly, the heat dissipation effect is greatly improved, and the water-cooling radiator has good isothermal property.
In some embodiments of the present invention, as shown in fig. 6, the diode module 6 includes: a diode device 13 or a resistor device 17 is arranged between every two water-cooled radiators 14; the resistance device 17 is a crimping type.
In some embodiments of the present invention, as shown in fig. 5 to 8, a belleville spring 15 is provided outside the water-cooled heat sink 14; a string pressing plate 18 is arranged outside the belleville spring 15; and the rotating top bolt 16 penetrates through a bolt hole in the middle of the string pressing plate 18, and rotates to compress the belleville spring 15, and the belleville spring 15 compresses the IGCT device 12, the water-cooled radiator 14, the diode device 13 and the resistor device 17. The belleville springs 15 are divided into two groups, and every three belleville springs 15 are divided into one group; one set of belleville springs provides pressure to the IGCT device 12 and the other resistance belleville spring 15 provides pressure to the diode device 13 and the resistance device 17. The pressures of the two sets of belleville springs 15 may be individually modified according to the requirements of the device. The resistor device 17 is heat-dissipated by the water-cooled heat sink 14 and packaged together with the diode device 13 into a press string.
In some embodiments of the present invention, a control board 7 is disposed on one side of the IGCT device 12 for controlling the IGCT device 12.
In some embodiments of the present invention, a unit water pipe 8 is connected to the water-cooled radiator 14; one end of the unit water pipe 8 is connected with the outside, and the other end of the unit water pipe is connected with the water-cooling reactor 11; the water-cooled reactor 11 is arranged on the water-cooled radiator 14 of the diode module 6; a capacitor 10 mounted on the water-cooled heat sink 14 of the diode module 6; the unit water pipe 8 includes a main water pipe and a plurality of thin water pipes, which are branches of the main water pipe. One end of the unit water pipe 8 is connected with the outside, the other end of the unit water pipe 8 comprises a plurality of thin water pipes, and each thin water pipe is connected with a water-cooling radiator 14 and a water-cooling reactor 11; the water-cooled reactor 11 is arranged on the water-cooled radiator 14 of the diode module 6; the water-cooled reactor 11 is connected to a water-cooled radiator 14 through a thin water pipe.
For example, as shown in fig. 4, the unit water pipe 8 and the water-cooled radiator 14 are connected together, the unit water pipe 8 is divided into a main water pipe and a thin water pipe, the main water pipe is divided into five thin water pipes and connected together with the water-cooled radiator 14, and then some of the thin water pipes are connected with the water-cooled radiator 14 and then connected to other water-cooled radiators 14 in series; some two water pipes are connected in parallel to the water-cooled radiator 14 and then connected in series to other water-cooled radiators 14, wherein one water pipe is connected to the water-cooled reactor 11, and then the water pipe is connected to the water-cooled radiator 14 after coming out from the water-cooled reactor 11.
In some embodiments of the present invention, the power module 2 supplies power to the IGCT device 12. The power module 2 provides a control power supply for the crimping type IGCT device, and ensures the operation of the crimping type IGCT device.
In some embodiments of the present invention, the IGCT device 12 has a pressure in the range of 36-44 kN.
In some embodiments of the present invention, as shown in fig. 5-8, the IGCT module 5 includes four IGCT devices 12 and five water-cooled heat sinks 14; the four IGCT devices 12 and the five water-cooled radiators 14 are respectively arranged in parallel; the diode module 6 comprises five diode devices 13, one resistor device 17 and seven water-cooled heat sinks 14; seven water-cooling radiators 14 of the diode module 6 are arranged in parallel, one diode device 13 is arranged between every two of the first six water-cooling radiators 14, and one resistor device 17 is arranged between the sixth and seventh water-cooling radiators 14. The crimping type resistor device 17 radiates heat through the water-cooling radiator, is simple in structure and easy to install, and is perfectly matched with the pressing string.
A water-cooling high-power full-bridge unit based on a crimping type IGCT comprises an IGCT full-bridge power module 1, a power module 2, a direct-current capacitor module 3, a module connecting bus bar 4 and the like. The unit is of modular design. The selected electronic power core device is IGCT8, and has the characteristics of strong current capacity (6.5kV/3.8kA, 5.5kV/3.6kA and 4.5kV/5kA), low on-state voltage, short circuit property due to failure, high series reliability and the like. The IGCT devices have small difference, and the series voltage sharing is ensured to a certain degree. The IGCT full-bridge power module 1 and the DC capacitor module 3 are connected together through a connecting bus bar 4. The power module 2 supplies power to the IGCT full-bridge power module 1. Wherein IGCT full-bridge power module 1 is the core of unit, and inside mainly includes: IGCT module 5, diode module 6, control panel 7, heat dissipation water pipe 8, power module frame 9, electric capacity 10, water-cooling reactance 11. The IGCT module 5 includes four IGCT devices 12 and five IGCT water-cooled heat sinks 14. The diode module 6 includes five diode devices 13, one press-fit resistor device 17, and seven water-cooled heat sinks 14. The IGCT module 5 and the diode module 6 are connected with each other through a connecting bus bar 4. All modules and devices in the IGCT full-bridge power module 1 are fixedly arranged on the power module frame 9, so that the structure is compact and attractive; the circuit distribution is reasonable, the structure is integrated, and the installation and the maintenance are convenient. When the full-bridge unit works, the IGCT device 12 and the diode device 13 generate great heat, and in order to ensure that the IGCT device 12 and the diode device 13 can work effectively for a long time, the design adopts a water cooling mode for heat dissipation, and two sides of each IGCT device 12 and each diode device 13 are respectively provided with a water-cooling radiator 14. The water-cooled radiator 14 is connected to the outside through the unit water pipe 8 to exchange heat. The water-cooled heat sink 14 not only dissipates heat from the IGCT device 12 and the diode device 13, but also conducts current. The IGCT module 5 and the diode module 6 are mainly pressed by rotating the top bolt 16 to compress the belleville spring 15. And the IGCT device 12, the diode device 13, the crimping resistor 17 and the water-cooled radiator 14 are crimped and packaged together. The module has the advantages of compact structure, uniform current distribution, low stray inductance and the like due to the connection busbar 4 connection. The power module 2 provides a control power supply for the crimping type IGCT device 12, and ensures the operation of the crimping type IGCT device 12.
Fig. 3 and 4 show a three-dimensional view and a side cross-sectional view of the IGCT full-bridge power module 1, where the IGCT full-bridge power module 1 includes an IGCT module 5, a diode module 6, a control board 7, a unit water pipe 8, a power module frame 9, a capacitor 10, and a water-cooled reactor 11. All modules and devices in the IGCT full-bridge power module 1 are fixedly arranged on the power module frame 9, so that the structure is compact and attractive; the circuit distribution is reasonable. The structure is integrated, and the installation and the maintenance are convenient. The IGCT module 5 and the diode module 6 are connected with each other through a connecting bus bar 4. The IGCT module 5 and the diode module 6 can be independently installed, removed, and maintained. The control board 7 mainly functions as control management of the IGCT device 12. The capacitor 10 is connected and fixed on the water-cooling radiator 14 through the connecting bus bar 4. The water-cooled reactor 11 is used for water cooling and heat dissipation through a connecting water pipe. Fig. 5, 7 and 8 are structural diagrams of the IGCT module 5. The IGCT module 5 mainly includes four IGCT devices 12 and five IGCT water-cooled heat sinks 14. Fig. 6 shows a three-dimensional view of the diode module 6. The diode module 6 mainly comprises five diode devices 13, a pressure welding type resistance device 17 and 7 water-cooling radiators 14. The water-cooled radiator 14 is connected to the outside through the unit water pipe 8 for heat exchange.
As shown in fig. 4, the belleville springs 15 are divided into two groups, one for each of 3 belleville springs. One set of belleville springs provides pressure to the IGCT device 12 and the other set of resistive belleville springs provides pressure to the diode device 13 and the crimp resistor device 17, and the pressure of the two sets of belleville springs 15 can be modified separately according to the requirements of the devices.
As shown in fig. 4 and 6, the resistor of the resistor device 17 is a press-fit type, the resistor device 17 is heat-dissipated by the water-cooled heat sink 14, and the resistor device 17 and the diode device 13 are packaged together in a press string.
As shown in fig. 4 and 5, the core electronic device of the electronic power is IGCT8, and has the characteristics of strong current capacity (6.5kV/3.8kA, 5.5kV/3.6kA, 4.5kV/5kA), low on-state voltage, short circuit when failure, high series reliability, and the like. The IGCT devices have small difference, and the series voltage sharing is ensured to a certain extent. Before the IGCT device 12 is press-fitted, the collector surface flatness, the radiator surface flatness and roughness of the IGCT device 12, and the form and position tolerance between the upper and lower IGCT devices 12 need to be ensured. IGCT device 12 has a pressure requirement in the range of 36-44 kN.
The IGCT device has the advantages that the current turn-off current can reach 5000A, the direct current continuous current can reach 3000A, the surge current capacity of 10ms is 35kA, the di/dt tolerance capacity is 500Hz5000A/us, the IGCT device has black start and overcurrent protection functions, low-cost, high-efficiency and high-reliability energy conversion of a direct current power grid can be realized, and the IGCT device is very suitable for development of power electronic complete equipment. Thus, based on the advantages of IGCT devices themselves. In order to better apply the IGCT device to practical engineering. The development and design of the unit based on the IGCT device are important links directly playing the advantages of the electrical performance of the unit. All devices are integrated in a unit, so that the structure is compact and attractive; the circuit distribution is reasonable; all modules and units can be independently installed, disassembled and maintained. The time for installation and wiring is effectively saved.
Through the unit, a water-cooling high-power full-bridge unit based on the compression-joint type IGCT is provided, the unit adopts a modular design and a water-cooling technology, and the requirements for compact structure and attractive appearance are met; electromagnetic compatibility, reasonable circuit distribution; the unit is convenient to install and maintain as a whole, an internal module and the unit are convenient to maintain; the power density is improved and the failure rate is reduced; the electronic power core device is an IGCT device, and has the characteristics of strong through-current capacity, low on-state voltage, short circuit when failure, high series reliability and the like, the IGCT device has small difference, and series voltage sharing is ensured to a certain extent; designing in an integrated manner; the unit uses the water-cooling radiator to radiate heat, the heat conductivity of the water-cooling radiator is tens of times higher than that of a common radiator, the heat is taken away more quickly, the radiating effect is greatly improved, and the water-cooling radiator has good isothermal property; the invention has the advantages of small occupied area, high reliability, strong controllability, technical price and the like, and has good prospect.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. The utility model provides a high-power full-bridge unit of water-cooling based on crimping formula IGCT which characterized in that includes:
a power supply module (2);
the IGCT full-bridge power module (1) is arranged below the power module (2);
the direct current capacitor module (3) is connected with the IGCT full-bridge power module (1) through a connecting bus bar (4);
wherein, the IGCT is a press-fit packaging integrated grid commutating thyristor.
2. The water-cooled high-power full-bridge unit based on the compression-type IGCT (integrated gate commutated thyristor) as claimed in claim 1, wherein the IGCT full-bridge power module (1) comprises:
a power module frame (9);
an IGCT module (5) mounted on the power module frame (9);
a diode module (6) mounted on the power module frame (9);
the IGCT module (5) and the diode module (6) are connected through the connecting busbar (4).
3. The water-cooled high-power full-bridge unit based on the compression-type IGCT of claim 2, wherein the IGCT module (5) comprises:
an IGCT drive board on which an IGCT device (12) is arranged;
the system comprises a plurality of water-cooled radiators (14), wherein an IGCT device (12) is arranged between every two water-cooled radiators (14);
wherein the IGCT device (12) is in a crimping type.
4. The water-cooled high-power full-bridge unit based on the compression-type IGCT (integrated gate commutated thyristor) as claimed in claim 3, wherein the diode module (6) comprises: a diode device (13) or a resistor device (17) is arranged between every two water-cooled radiators (14); the resistor device (17) is in a crimping type.
5. The water-cooled high-power full-bridge unit based on the compression-type IGCT (integrated gate commutated thyristor) as claimed in claim 4, wherein a belleville spring (15) is arranged outside the water-cooled radiator (14);
a string pressing plate (18) is arranged on the outer side of the butterfly spring (15);
and the rotating top bolt (16) penetrates through a bolt hole in the middle of the string pressing plate (18) and rotates to compress the belleville spring (15), and the belleville spring (15) compresses the IGCT device (12), the water-cooled radiator (14), the diode device (13) and the resistor device (17).
6. The water-cooled high-power full-bridge unit based on the compression-type IGCT (integrated gate commutated thyristor) as claimed in claim 3, wherein a control board (7) is arranged on one side of the IGCT device (12) and used for controlling the IGCT device (12).
7. The water-cooled high-power full-bridge unit based on the compression-type IGCT (Integrated Gate commutated thyristor) as claimed in claim 5, wherein a unit water pipe (8) is connected to the water-cooled radiator (14);
one end of the unit water pipe (8) is connected with the outside, the other end of the unit water pipe (8) comprises a plurality of thin water pipes, and each thin water pipe is connected with a water-cooling radiator (14) and a water-cooling reactor (11);
the water-cooled reactor (11) is arranged on the water-cooled radiator (14) of the diode module (6);
a capacitor (10) mounted on the water-cooled heat sink (14) of the diode module;
the unit water pipe (8) comprises a main water pipe and a plurality of thin water pipes, and the thin water pipes are branches of the main water pipe.
8. The water-cooled high-power full-bridge unit based on the compression-type IGCT (integrated gate commutated thyristor) as claimed in claim 3, wherein the power module (2) supplies power for the IGCT device (12).
9. The water-cooled high-power full-bridge unit based on the compression-type IGCT of claim 3, wherein the pressure of the IGCT device (12) is in the range of 36-44 kN.
10. The water-cooled high-power full-bridge unit based on the compression-type IGCT (integrated gate commutated thyristor) as claimed in claim 4, wherein the IGCT module (5) comprises four IGCT devices (12) and five water-cooled heat sinks (14); the four IGCT devices (12) and the five water-cooling radiators (14) are respectively arranged in parallel; the diode module (6) comprises five diode devices (13), one resistance device (17) and seven water-cooled radiators (14); seven water-cooling radiators (14) of the diode module (6) are arranged in parallel, one diode device (13) is arranged between every two of the first six water-cooling radiators (14), and one resistor device (17) is arranged between the sixth water-cooling radiator (14) and the seventh water-cooling radiator (14).
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| CN202110253316.1A CN112953170A (en) | 2021-03-08 | 2021-03-08 | Water-cooling high-power full-bridge unit based on crimping type IGCT |
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| CN202110253316.1A CN112953170A (en) | 2021-03-08 | 2021-03-08 | Water-cooling high-power full-bridge unit based on crimping type IGCT |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Application publication date: 20210611 |