CN112886793B - Full-bridge power module structure based on crimping type IGCT - Google Patents
Full-bridge power module structure based on crimping type IGCT Download PDFInfo
- Publication number
- CN112886793B CN112886793B CN202110252148.4A CN202110252148A CN112886793B CN 112886793 B CN112886793 B CN 112886793B CN 202110252148 A CN202110252148 A CN 202110252148A CN 112886793 B CN112886793 B CN 112886793B
- Authority
- CN
- China
- Prior art keywords
- igct
- plate
- module
- diode
- pressing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a full-bridge power module structure based on a crimping type IGCT (integrated gate commutated thyristor), which comprises a fixed frame assembly, an IGCT module, an insulating partition plate and a diode module; the insulation partition plate is fixed in the middle of the fixed frame assembly, the left side and the right side of the insulation partition plate are respectively provided with an IGCT module and a diode module, and the IGCT module and the diode module are detachably connected with the fixed frame assembly in a crimping mode; the IGCT devices of the IGCT module are arranged in a stacked mode, the first diode device of the diode module and the IGCT device are arranged in a stacked mode correspondingly, and the first diode device and the corresponding IGCT device are connected in an anti-parallel mode to form a full-bridge circuit; the modular structure of the invention adopts modular design, the structure is compact and beautiful, and the circuit distribution is reasonable; and the installation and maintenance are convenient.
Description
Technical Field
The invention belongs to the field of power electronic power module structures, and particularly relates to a full-bridge power module structure based on a crimping IGCT (integrated gate commutated thyristor).
Background
Integrated Gate Commutated Thyristors IGCT (interconnected Gate Commutated Thyristors) are a new type of power semiconductor device that was introduced in 1996 for use in a large scale power electronics package. The IGCT is a novel high-power semiconductor switch device based on a Gate Turn-off thyristor GTO (Gate Turn-off thyristor) structure, performing Gate hard drive by using an integrated Gate structure, and adopting a buffer layer structure and an anode transparent emitter technology, and has the on-state characteristics of a thyristor and the switching characteristics of a transistor. IGCT makes the converter make great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and brings new leap to the complete set of power electronic devices. The medium-high voltage power unit uses an IGCT as a core device and is applied to the fields of electric power, metallurgy, railways and the like.
In the prior art, the medium-high voltage power unit has a complex structure, large operation loss, large power module volume, large whole machine occupied area, relatively high manufacturing cost and troublesome replacement and maintenance.
Disclosure of Invention
In order to solve the problems, the invention provides a full-bridge power module structure based on a compression-type IGCT (integrated gate commutated thyristor), all devices are integrated and arranged on a frame to form a module, and the structure is more compact, reasonable and attractive.
A full-bridge power module structure based on a compression-joint IGCT comprises a fixed frame assembly, an IGCT module, an insulating partition plate and a diode module;
the insulation partition plate is fixed in the middle of the fixed frame assembly, the left side and the right side of the insulation partition plate are respectively provided with an IGCT module and a diode module, and the IGCT module and the diode module are detachably pressed with the fixed frame assembly; the IGCT devices of the IGCT module are arranged in a stacked mode, the first diode device of the diode module and the IGCT devices are arranged in a stacked mode correspondingly, and the first diode device and the corresponding IGCT devices are connected in an anti-parallel mode to form a full-bridge circuit.
Further, the fixing frame assembly comprises an upper pressing plate, a lower pressing plate, a left side plate, a right side plate, a limiting part and a pressing part;
the left side plate and the right side plate are respectively connected with the upper pressing plate and the lower pressing plate through bolts to form a rectangular frame; the limiting component is fixed on the lower pressing plate, the upper pressing plate is provided with a round hole, and the pressing component is connected with the round hole of the upper pressing plate in a sliding mode.
Furthermore, the limiting component comprises a first limiting component and a second limiting component;
the first limiting assembly is arranged between the lower pressing plate and the IGCT module and limits the IGCT module to move downwards; the second limiting assembly is arranged between the lower pressing plate and the diode module and limits the diode module to move downwards.
Further, the pressing part comprises a first pressing component and a second pressing component;
the first pressing component and the second pressing component are fixed on the upper pressing plate; the first pressing assembly is matched with the upper part of the IGCT module to press and fix the IGCT module; the second pressing assembly is matched with the upper part of the diode module to press and fix the diode module.
Furthermore, the first pressing assembly is consistent with the second pressing assembly in structure and comprises a pressing block, a spring and a top bolt;
the pressing block is cylindrical, a step surface is arranged at the lower end of the pressing block, the upper end of the pressing block is connected with the round hole of the upper pressing plate in a sliding mode, a spring is sleeved on the pressing block, and the spring is arranged between the upper pressing plate and the step surface of the pressing block; a threaded hole is formed in the middle of the pressing block, an external thread is arranged on the top bolt, and the top bolt is connected with the pressing block through the thread.
Furthermore, the IGCT module also comprises a first water-cooling radiator, a first insulating plate, a second insulating plate, an aluminum square frame, a first base plate and a third insulating plate;
the number of the IGCT devices is 4, the number of the first water-cooling radiators is 6, the number of the first insulating plates is 1, the number of the second insulating plates is 1, the number of the aluminum square frames is 1, the number of the first base plates is 1, and the number of the third insulating plates is 1; both sides of each IGCT device are matched with the first water-cooled radiator; the first base plate, the first insulating plate, the first water-cooling radiator, the IGCT device, the first water-cooling radiator, the second insulating plate, the aluminum frame, the first water-cooling radiator and the third insulating plate are arranged in a stacked mode from top to bottom.
Further, the diode module further comprises a second diode device, a second water-cooling radiator, a crimping resistor, a fourth insulating plate, a second base plate and a fifth insulating plate;
the number of the first diode devices is 4, the number of the second diode devices is 1, the number of the second water-cooling radiators is 7, the number of the crimping resistors is 1, the number of the fourth insulating plates is 1, the number of the second base plates is 1, and the number of the fifth insulating plates is 1; the second base plate, the fourth insulating plate, the second water-cooling radiator, the first diode device, the second water-cooling radiator, the second diode device, the second water-cooling radiator, the crimping resistor, the second water-cooling radiator and the fifth insulating plate are arranged in a stacked mode from top to bottom.
Furthermore, the IGCT devices are connected in series two by two, the IGCT devices connected in series at the upper end are connected in parallel with the IGCT devices connected in series at the lower end, and each first diode device is connected in inverse parallel with the corresponding IGCT device to form a full-bridge circuit.
Further, the first diode device is a rectifier diode, and the second diode device is a freewheeling diode.
Further, the first backing plate is circular, and the diameter of the circle is not larger than the outer diameter of the first insulating plate.
Furthermore, the second backing plate is circular, and the diameter of the circle is not larger than the outer diameter of the fourth insulating plate.
Further, the thickness of the insulating spacer is larger than the creepage distance and the air discharge distance between the IGCT device and the diode device.
The invention has the beneficial effects that: the modular structure of the invention adopts modular design, the structure is compact and beautiful, and the circuit distribution is reasonable; the installation and maintenance are convenient.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic perspective view of a full-bridge power module structure based on a crimping-type IGCT according to an embodiment of the present invention;
fig. 2 is an installation schematic diagram of an IGCT module and a diode module of a full-bridge power module structure based on a crimping IGCT according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a first compressing assembly of a full-bridge power module structure based on a crimping IGCT according to an embodiment of the present invention;
fig. 4 is a schematic diagram of an electrical press-fitting structure of a full-bridge power module structure based on a press-fit IGCT according to an embodiment of the present invention.
In the figure: 1-fixed frame component, 2-IGCT module, 3-insulating partition board, 4-diode module, 11-upper pressure plate, 12-lower pressure plate, 13-left side plate, 14-right side plate, 15-first limit component, 16-first pressing component, 17-second limit component, 18-second pressing component, 161-pressing block, 162-spring, 163-top bolt, 21-IGCT device, 22-first water-cooled radiator, 23-first insulating plate, 24-second insulating plate, 25-aluminum square frame, 26-first backing plate, 27-third insulating plate, 41-first diode device, 42-second diode device, 43-second water-cooled radiator, 44-crimping resistor, 45-fourth insulating plate, 46-second backing plate and 47-fifth insulating plate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic perspective view of a full-bridge power module structure based on a compression-type IGCT according to an embodiment of the present invention, and the full-bridge power module structure based on the compression-type IGCT includes a fixed frame assembly 1, an IGCT module 2, an insulating spacer 3, and a diode module 4.
Wherein, the insulating barrier 3 is fixed in the middle of the fixed frame component 1, the left and right sides of the insulating barrier 3 are respectively provided with an IGCT module 2 and a diode module 4, and the IGCT module 2 and the diode module 4 are detachably connected with the fixed frame component 1 in a crimping way.
Referring to fig. 2, fig. 2 is an installation schematic diagram of an IGCT module and a diode module of a full-bridge power module structure based on a crimping IGCT according to an embodiment of the present invention, an IGCT device 21 of the IGCT module 2 is arranged in a stacked manner, a first diode device 41 of the diode module 4 is arranged in a stacked manner corresponding to the IGCT device 21, and the first diode device 41 is connected in anti-parallel with the corresponding IGCT device 21 to form a full-bridge circuit.
The insulating partition plate 3 not only plays a supporting role, but also ensures the stability and safety of the electrical performance because the thickness of the insulating partition plate 3 is larger than the creepage distance and the air discharge distance between the IGCT device 21 and the diode device.
The modular structure of the embodiment adopts a modular design, the structure is compact and attractive, and the circuit distribution is reasonable; and the installation and maintenance are convenient.
The IGCT device 21 selected by the IGCT module 2 has the characteristics of strong through-current capability (6.5 kV/3.8kA, 5.5kV/3.6kA and 4.5kV/5 kA), low on-state voltage, short-circuit failure, high series reliability and the like. The IGCT devices 21 have small difference, and series voltage sharing is guaranteed to a certain degree.
As shown in fig. 2, the fixed frame assembly 1 is a rectangular frame, and includes an upper press plate 11, a lower press plate 12, a left side plate 13, a right side plate 14, a limiting member, and a pressing member. The left side plate 13 and the right side plate 14 are respectively connected with the upper pressing plate 11 and the lower pressing plate 12 through bolts to form a rectangular frame. The limiting component is fixed on the lower pressing plate 12, the upper pressing plate 11 is provided with a round hole, and the pressing component is connected with the round hole of the upper pressing plate 11 in a sliding mode.
The limiting component comprises a first limiting component 15 and a second limiting component 17, the first limiting component 15 is arranged between the lower pressure plate 12 and the IGCT module 2, and the IGCT module 2 is limited from moving downwards; the second limiting assembly 17 is disposed between the lower pressing plate 12 and the diode module 4, and limits the diode module 4 from moving downward.
The pressing component comprises a first pressing assembly 16 and a second pressing assembly 18, and the first pressing assembly 16 and the second pressing assembly 18 are fixed on the upper pressing plate 11. The first pressing component 16 is matched with the upper part of the IGCT module 2 to press and fix the IGCT module 2; the second pressing assembly 18 is matched with the upper part of the diode module 4 to press and fix the diode module 4.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a first pressing assembly 16 of a full-bridge power module structure based on a press-fit IGCT according to an embodiment of the present invention, in which the first pressing assembly 16 is consistent with the second pressing assembly 18, and the first pressing assembly 16 includes a pressing block 161, a spring 162, and a bolt 163. The pressing block 161 is cylindrical, a step surface is arranged at the lower end of the pressing block 161, the upper end of the pressing block 161 is connected with the round hole of the upper pressure plate 11 in a sliding mode, a spring 162 is sleeved on the pressing block 161, and the spring 162 is arranged between the step surfaces of the upper pressure plate 11 and the pressing block 161. The middle of the pressing block 161 is provided with a threaded hole, the top bolt 163 is provided with an external thread, and the top bolt 163 is connected with the pressing block 161 through the thread.
During pressing, the top bolt 163 is rotated to move downwards, so that the bottom of the top bolt 163 is in contact with the upper end of the IGCT module 2 or the diode module 4, when the top bolt 163 continues to move downwards, the upper end of the pressing block 161 slides upwards along the circular hole of the upper pressing plate 11, the spring 162 is compressed, the counter force of the spring 162 limits the pressing block 161 to continue moving, and at this time, the top bolt 163 connected with the pressing block 161 presses the IGCT module 2 or the diode module 4, so that pressing is completed.
The amount of compression may be determined by the choice of spring 162.
When the components of the IGCT module 2 or the diode module 4 need to be replaced, the position of the top bolt 163 of the first pressing assembly 16 or the second pressing assembly 18 is adjusted, so that the whole pressure of the IGCT module 2 or the diode module 4 can be removed for replacement and maintenance. When the assembly is performed again, the IGCT module 2 or the diode module 4 can be press-fitted by simply rotating the plug 163 of the first pressing assembly 16 or the second pressing assembly 18.
As shown in fig. 2, the IGCT module 2 further includes a first water-cooled heat sink 22, a first insulating plate 23, a second insulating plate 24, an aluminum frame 25, a first gasket 26, and a third insulating plate 27.
The number of the IGCT devices 21 is 4, the number of the first water-cooled radiators 22 is 6, the number of the first insulating plates 23 is 1, the number of the second insulating plates 24 is 1, the number of the aluminum frames 25 is 1, the number of the first backing plates 26 is 1, and the number of the third insulating plates 27 is 1.
The first backing plate 26, the first insulating plate 23, the first water-cooled heat sink 22, the IGCT device 21, the first water-cooled heat sink 22, the second insulating plate 24, the aluminum frame 25, the first water-cooled heat sink 22, and the third insulating plate 27 are arranged in a stacked manner from top to bottom.
Both sides of each IGCT device 21 are fitted with a first water-cooled heat sink 22.
The first shim plate 26 cooperates with the top bolt 163 to transmit the compressive force to the IGCT module 2. The first pad 26 has a circular shape having a diameter not greater than the outer diameter of the first insulating plate 23. The first shim plate 26 increases the contact area between the first compression assembly 16 and the IGCT module 2 to prevent the top bolt 163 from damaging the internal components of the IGCT module 2 when the first compression assembly 16 compresses.
The first insulating plate 23 and the third insulating plate 27 ensure a creepage distance and an air discharge distance between the electric structure and the fixed frame assembly 1.
The aluminum frame 25 is used for installing the discharge resistor subsequently, and the second insulating plate 24 between the first water-cooling heat radiator 22 and the aluminum frame 25 ensures the creepage distance and the air discharge distance between the discharge resistor and the first water-cooling heat radiator 22.
The first water-cooled heat sink 22 dissipates heat from the IGCT device 21 and the aluminum frame 25, and the first water-cooled heat sink 22 not only dissipates heat, but also conducts current.
As shown in fig. 2, the diode module 4 further includes a second diode device 42, a second water-cooled heat sink 43, a crimp resistor 44, a fourth insulating plate 45, a second backing plate 46, and a fifth insulating plate 47.
The number of the first diode devices 41 is 4, the number of the second diode devices 42 is 1, the number of the second water-cooled radiators 43 is 7, the number of the crimping resistors 44 is 1, the number of the fourth insulating plates 45 is 1, the number of the second backing plates 46 is 1, and the number of the fifth insulating plates 47 is 1.
The second backing plate 46, the fourth insulating plate 45, the second water-cooled heat sink 43, the first diode device 41, the second water-cooled heat sink 43, the second diode device 42, the second water-cooled heat sink 43, the crimp resistor 44, the second water-cooled heat sink 43, and the fifth insulating plate 47 are arranged in a stacked manner from top to bottom.
The second pad 46 is identical in structure and function to the first pad 26 and will not be described in detail. The second gasket 46 is circular, and the diameter of the circle is not greater than the outer diameter of the fourth insulating plate 45.
The fourth insulating plate 45 and the fifth insulating plate 47 of the diode module 4 ensure a creepage distance and an air discharge distance between the electric structure and the fixed frame assembly 1.
Two sides of each of the first diode device 41, the second diode device 42 and the crimp resistor 44 are matched with the second water-cooling heat sink 43
The second water-cooled heat sink 43 has the same structure and function as the first water-cooled heat sink 22, and is not described again.
When the devices of the IGCT module 2 and the diode module 4 work, the IGCT device 21, the first diode device 41, the second diode device 42, and the crimp resistor 44 generate a large amount of heat, and in order to ensure that each device can work effectively for a long time, the design adopts a water-cooling radiator to dissipate heat.
The water-cooled radiator is used for heat dissipation, the heat conductivity of the water-cooled radiator is tens of times higher than that of a common radiator, heat is taken away more quickly, the heat dissipation effect is greatly improved, and the water-cooled radiator has good isothermal property.
Referring to fig. 4, fig. 4 is a schematic diagram of an electrical press-mounting structure of a full-bridge power module structure based on a press-connection IGCT according to an embodiment of the present invention, in which IGCT devices 21 are connected in series two by two, and the two IGCT devices 21 connected in series at the upper end are connected in parallel with the two IGCT devices 21 connected in series at the lower end. Each first diode device 41 is connected in anti-parallel with a corresponding IGCT device 21 to form a full bridge circuit. A first terminal of the second diode device 42 is connected to the crimp resistor 44, and a second terminal of the second diode device 42 is connected to the first diode device 41 at the lowermost end of the diode block 4. The first diode device 41 is a rectifying diode and the second diode device 42 is a freewheeling diode. The fly-wheel diode is added in the circuit, so that the current can change more smoothly, the generation of surge voltage is avoided, and circuit components are protected.
And (3) module press-fitting: the surface flatness and roughness of the collector of the IGCT device 21, the first water-cooled radiator 22, the second water-cooled radiator 43 and other devices are processed before press mounting, after the processing, the devices are sequentially arranged on two sides of the insulating partition plate 3 in a stacking mode, the IGCT module 2 and the diode module 4 are pressed by using the top bolts 163 of the first pressing assembly 16 and the second pressing assembly 18, the press mounting is completed, and replacement and maintenance are not repeated.
The embodiment has the advantages of near zero on-state loss, support of current differentiation configuration, low cost, support of reclosing, small occupied area, high reliability, strong controllability, low technical price and the like.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. A full-bridge power module structure based on a compression-joint IGCT is characterized by comprising a fixed frame assembly, an IGCT module, an insulating partition plate and a diode module;
the insulation partition plate is fixed in the middle of the fixed frame assembly, the IGCT module and the diode module are respectively arranged on the left side and the right side of the insulation partition plate, and the IGCT module and the diode module are detachably connected with the fixed frame assembly in a compression joint mode; the IGCT devices of the IGCT module are arranged in a stacked mode, the first diode device of the diode module and the IGCT device are arranged in a stacked mode correspondingly, and the first diode device and the corresponding IGCT device are connected in an anti-parallel mode to form a full-bridge circuit; the fixing frame assembly comprises an upper pressing plate and a pressing part, the upper pressing plate is provided with a round hole, the pressing part is connected with the round hole of the upper pressing plate in a sliding mode, and the pressing part comprises a first pressing assembly and a second pressing assembly; the first pressing assembly and the second pressing assembly are fixed on the upper pressing plate; the first pressing assembly is matched with the upper part of the IGCT module to press and fix the IGCT module; the second pressing assembly is matched with the upper part of the diode module to press and fix the diode module; the first pressing assembly is consistent with the second pressing assembly in structure and comprises a pressing block, a spring and a top bolt; the pressing block is cylindrical, a step surface is arranged at the lower end of the pressing block, the upper end of the pressing block is connected with the round hole of the upper pressing plate in a sliding mode, the pressing block is sleeved with the spring, and the spring is arranged between the upper pressing plate and the step surface of the pressing block; the middle of the compression block is provided with a threaded hole, the top bolt is provided with an external thread, and the top bolt is connected with the compression block through the thread;
the diode module further comprises a second diode device and a crimping resistor, wherein a first end of the second diode device is connected with the crimping resistor, and a second end of the second diode device is connected with the first diode device;
the IGCT module also comprises a first water-cooling radiator, a first insulating plate, a second insulating plate, an aluminum square frame, a first base plate and a third insulating plate; the number of the IGCT devices is 4, the number of the first water-cooling radiators is 6, the number of the first insulating plates is 1, the number of the second insulating plates is 1, the number of the aluminum square frames is 1, the number of the first base plates is 1, and the number of the third insulating plates is 1; the first base plate, the first insulating plate, the first water-cooled radiator A, the IGCT device A, the first water-cooled radiator B, the IGCT device B, the first water-cooled radiator C, the IGCT device C, the first water-cooled radiator D, the IGCT device D, the first water-cooled radiator E, the second insulating plate, the aluminum square frame, the first water-cooled radiator F and the third insulating plate are arranged in a stacked mode from top to bottom, and the aluminum square frame is used for installing a discharge resistor; the first bolster plate cooperates with the ram to transmit compression force to the IGCT module.
2. The compression-type IGCT-based full-bridge power module structure according to claim 1, wherein the fixing frame assembly further comprises a lower pressure plate, a left side plate, a right side plate and a limiting part;
the left side plate and the right side plate are respectively connected with the upper pressing plate and the lower pressing plate through bolts to form a rectangular frame; the limiting component is fixed on the lower pressing plate.
3. The compression-type IGCT-based full-bridge power module structure as claimed in claim 2, wherein the limiting component comprises a first limiting assembly and a second limiting assembly;
the first limiting assembly is arranged between the lower pressure plate and the IGCT module and limits the IGCT module to move downwards; the second limiting assembly is arranged between the lower pressing plate and the diode module and limits the diode module to move downwards.
4. The compression-joint IGCT-based full-bridge power module structure as claimed in claim 1, wherein the diode module further comprises a second water-cooled heat sink, a fourth insulation plate, a second backing plate and a fifth insulation plate;
the number of the first diode devices is 4, the number of the second diode devices is 1, the number of the second water-cooling radiators is 7, the number of the crimping resistors is 1, the number of the fourth insulating plates is 1, the number of the second base plates is 1, and the number of the fifth insulating plates is 1; the second backing plate fourth insulation board, second water-cooling radiator A, first diode device A, second water-cooling radiator B, first diode device B, second water-cooling radiator C, first diode device C, second water-cooling radiator D, first diode device D, second water-cooling radiator E second diode device, second water-cooling radiator F crimping resistance, second water-cooling radiator G the fifth insulating board is from last down range upon range of formula to be arranged.
5. The full-bridge power module structure based on crimping type IGCT of claim 1, wherein the IGCT devices are connected in series two by two, the IGCT devices connected in series at the upper end are connected in parallel with the IGCT devices connected in series at the lower end, and each first diode device is connected in anti-parallel with the corresponding IGCT device to form a full-bridge circuit.
6. The compression-type IGCT-based full-bridge power module structure as claimed in claim 4, wherein the first diode device is a rectifier diode and the second diode device is a freewheeling diode.
7. The compression-type IGCT-based full-bridge power module structure according to claim 1, wherein the first backing plate is circular, and the diameter of the circle is not larger than the outer diameter of the first insulating plate.
8. The compression-type IGCT-based full-bridge power module structure according to claim 4, wherein the second backing plate is circular, and the diameter of the circle is not larger than the outer diameter of the fourth insulating plate.
9. The compression-type IGCT-based full-bridge power module structure of claim 1, wherein the insulating spacer thickness is greater than a creepage and air discharge distance between the IGCT device and the diode device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110252148.4A CN112886793B (en) | 2021-03-08 | 2021-03-08 | Full-bridge power module structure based on crimping type IGCT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110252148.4A CN112886793B (en) | 2021-03-08 | 2021-03-08 | Full-bridge power module structure based on crimping type IGCT |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112886793A CN112886793A (en) | 2021-06-01 |
| CN112886793B true CN112886793B (en) | 2022-12-23 |
Family
ID=76053782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110252148.4A Active CN112886793B (en) | 2021-03-08 | 2021-03-08 | Full-bridge power module structure based on crimping type IGCT |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112886793B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101795064B (en) * | 2010-03-11 | 2012-06-27 | 荣信电力电子股份有限公司 | Power phase module based on IEGT |
| CN105006954A (en) * | 2015-08-14 | 2015-10-28 | 南车株洲电力机车研究所有限公司 | IGCT (integrated gate commutated thyristor) based H-bridge power module |
| CN109217641B (en) * | 2018-11-15 | 2024-02-20 | 荣信汇科电气股份有限公司 | Open frame construction's converter power unit module |
-
2021
- 2021-03-08 CN CN202110252148.4A patent/CN112886793B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112886793A (en) | 2021-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8547698B2 (en) | Cooling structure of capacitor and inverter device | |
| JP3228021B2 (en) | Inverter unit and inverter device | |
| EP0069971B2 (en) | Gate turn-off thyristor stack | |
| CN105590930B (en) | A kind of used in new energy vehicles IGBT power module | |
| US10515863B2 (en) | Power module and power conversion apparatus including case and elastic member | |
| CN111106098B (en) | Power module with low parasitic inductance layout | |
| CN111261601B (en) | Clamp embedded type high-integration-level compression joint type packaged power module | |
| US11823971B2 (en) | Power electronics system | |
| CN101290931B (en) | Self-cooled thyristor valve of high power and mounting vehicle | |
| JP2003197861A (en) | Power semiconductor submodule and power semiconductor module | |
| CN112886793B (en) | Full-bridge power module structure based on crimping type IGCT | |
| JP2001352767A (en) | Power unit for power converter | |
| CN218414576U (en) | Packaging structure of power module and large-current module | |
| EP3926775A2 (en) | Solid state switching device including nested control electronics | |
| CN201207393Y (en) | Large power self-cooling thyratron transistor valve and vehicle for mounting | |
| JP4973125B2 (en) | Inverter snubber capacitor and cooling structure of snubber circuit | |
| JP6442381B2 (en) | Fixing structure of heating element, power conversion unit and power conversion device | |
| CN213637551U (en) | Valve bank and integrated mps using same | |
| CN219698280U (en) | Servo driver and inversion module thereof | |
| CN112953170A (en) | Water-cooling high-power full-bridge unit based on crimping type IGCT | |
| CN220210233U (en) | Crimping type power module and converter | |
| CN216928562U (en) | Integrated radiating fin for buck-boost DC | |
| CN217643158U (en) | Silicon carbide DC/DC power module | |
| CN116846213A (en) | Silicon carbide DC/DC power module | |
| CN116093870A (en) | Valve group structure of intelligent ice melting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |