CN105006954A - IGCT (integrated gate commutated thyristor) based H-bridge power module - Google Patents
IGCT (integrated gate commutated thyristor) based H-bridge power module Download PDFInfo
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Abstract
The invention discloses an IGCT (integrated gate commutated thyristor) based H-bridge power module, which comprises an IGCT press-fitting string, a freewheel diode press-fitting string, an absorption diode press-fitting string and a support frame, wherein the support frame is used for supporting the IGCT press-fitting string, the freewheel diode press-fitting diode string and the absorption diode press-fitting string. The H-bridge power module disclosed by the invention adopts a three-string type press fitting mode, and two two-level circuits are integrated into a whole body, thereby greatly improving the integration level and the power density of the H-bridge power module, ensuring a simple structure of the module at the same time, and being easy for electrical connection and maintenance operations.
Description
Technical field
The present invention relates to high-voltage high-power frequency transformator power model technical field, particularly relate to a kind of H bridge power model based on IGCT.
Background technology
In the Large-power Driving System such as mesohigh many level Large Powers current transformer is mainly used in electric power, metallurgy rolling mill, mine hoist, oil creep into, Ship Propeling, have high reliability, spatial volume is little, the requirement such as compact conformation, power grade are high, high power density as far as possible.At present, H bridge type many level topological structure, diode-clamped three-level topology structure, striding capacitance type three-level structure become the main of market application and realize topological form.Due to the restriction of power device voltage withstand class, cut-off current grade, diode clamp type three-level topology structure presses classes of applications the most extensive in 3KV, and 6KV, 10KV high pressure level then more adopts H bridge type many level topological structure.
In prior art, usually pass through based on IGCT (integrated Gate CommutatedThyristors, integrated gate commutated thyristor) two level block (as shown in Figure 1, two level block comprise the IGCT of two series connection and the anti-paralleled diode in parallel respectively with two IGCT, also namely fly-wheel diode forms) input parallel connection, the mode exporting series connection realizes H bridge, such as realize 6KV High voltage output and need 12 two level block, 9KV High voltage output then wants 18 two level block, but two so many level block will make whole power model system disperse, increase the spatial volume of power model system, reduce the power density of power model system.
Therefore, how providing a kind of makes the H bridge power model based on IGCT that the spatial volume of power model system is little, power density is high be the problem that those skilled in the art need to solve at present.
Summary of the invention
The object of this invention is to provide a kind of H bridge power model based on IGCT, two two level circuits are integrated in one, substantially increase integrated level and the power density of H bridge power model, ensure that modular structure is succinct simultaneously, be easy to electrical connection and attended operation.
For solving the problems of the technologies described above, the invention provides a kind of H bridge power model based on IGCT, comprising:
IGCT press-fits string, fly-wheel diode press-fits string and absorption diode press-fits string, wherein, described IGCT press-fits string and comprises the first radiator press-fited along straight line, first cross-over block, two IGCT in two IGCT and second liang level circuits in first liang of level circuit, described fly-wheel diode press-fits string and comprises the second radiator press-fited along straight line, second cross-over block, two fly-wheel diodes in two fly-wheel diodes in described first liang of level circuit and described second liang of level circuit, described absorption diode press-fits string and comprises the 3rd radiator press-fited along straight line, 3rd cross-over block, an absorption diode in an absorption diode in described first liang of level circuit and described second liang of level circuit,
Bracing frame, for supporting, described IGCT press-fits string, fly-wheel diode press-fits string and absorption diode press-fits string.
Preferably, common port between two IGCT in described first liang of level circuit is connected by the first L-type busbar with between the common port between two fly-wheel diodes in described first liang of level circuit, and described first L-type busbar is as the output of described first liang of level circuit.
Preferably, common port between two IGCT in described second liang of level circuit is connected by the second L-type busbar with between the common port between two fly-wheel diodes in described second liang of level circuit, and described second L-type busbar is as the output of described second liang of level circuit.
Preferably, the busbar link of described first radiator, the second radiator and the 3rd radiator in one plane.
Preferably, described first liang of level circuit and described second liang of level circuit share an absorption inductor, and described absorption inductor is arranged at the described external input terminals based on the H bridge power model of IGCT.
Preferably, the absorption resistance of described first liang of level circuit is arranged at the described external input terminals based on the H bridge power model of IGCT.
Preferably, the absorption resistance of described second liang of level circuit is arranged at the described external input terminals based on the H bridge power model of IGCT.
Preferably, support frame as described above comprises the first parallel pressing plate and the second pressing plate, the first end that described IGCT press-fits string, fly-wheel diode press-fits string and absorption diode press-fits string is installed on described first pressing plate, and described IGCT press-fits string, fly-wheel diode press-fits and to go here and there and the second end that absorption diode press-fits string is installed on described second pressing plate.
A kind of H bridge power model based on IGCT provided by the invention, two IGCT in two IGCT and second liang level circuits in first liang of level circuit are press-fited into IGCT and press-fits string, two fly-wheel diodes in first liang of level circuit and two fly-wheel diodes in second liang of level circuit are press-fited into fly-wheel diode and press-fits string, an absorption diode in first liang of level circuit and an absorption diode in second liang of level circuit are press-fited into absorption diode and press-fits string, adopt the press-fit approach of three string datas, two two level circuits are integrated in one, substantially increase integrated level and the power density of H bridge power model, ensure that modular structure is succinct simultaneously, be easy to electrical connection and attended operation.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in prior art and embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the circuit theory diagrams of two level block provided by the invention;
Fig. 2 is the 3-D solid structure figure of the first angle of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention;
Fig. 3 is the 3-D solid structure figure of the second angle of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention;
Fig. 4 is the front view of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention;
Fig. 5 is the vertical view of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention;
Fig. 6 is the left view of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention;
Fig. 7 is the right view of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention;
Fig. 8 is the circuit theory diagrams of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention;
Fig. 9 is the integrated circuit schematic diagram of a kind of H bridge power model based on IGCT (in Fig. 8 dotted line frame) be made up of two two level block provided by the invention;
Wherein, in Fig. 2-Fig. 7:
DC+ outgoing line busbar-1, PH1 outgoing line busbar-2, PH2 outgoing line busbar-3, DC+ short circuit busbar-4, DC-outgoing line busbar-5, Absorption Capacitance-6, absorption diode press-fits string-7, fly-wheel diode press-fits string-8, IGCT press-fits string-9, second cross-over block-10, fly-wheel diode-11, absorption diode-12, 3rd radiator-13, main water inlet tube-14, primary flow pipe-15, IGCT-16, absorb busbar-17, supporting insulator-18, support water pipe-19, supporting bracket-20, first pressing plate-21, second pressing plate-22 and clamp nut-23.
Embodiment
Core of the present invention is to provide a kind of H bridge power model based on IGCT, is integrated in one by two two level circuits, substantially increases integrated level and the power density of H bridge power model, ensure that modular structure is succinct simultaneously, is easy to electrical connection and attended operation.
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Please refer to Fig. 2,3,4,5,6,7,8 and Fig. 9, wherein, Fig. 2 is the 3-D solid structure figure of the first angle of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention; Fig. 3 is the 3-D solid structure figure of the second angle of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention; Fig. 4 is the front view of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention; Fig. 5 is the vertical view of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention; Fig. 6 is the left view of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention; Fig. 7 is the right view of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention; Fig. 8 is the circuit theory diagrams of a kind of H bridge power model based on IGCT be made up of two two level block provided by the invention; Fig. 9 is the integrated circuit schematic diagram of a kind of H bridge power model based on IGCT (in Fig. 8 dotted line frame) be made up of two two level block provided by the invention.
This H bridge power model comprises:
IGCT press-fits string 9, fly-wheel diode press-fits string 8 and absorption diode press-fits string 7, wherein, IGCT press-fits string 9 and comprises the first radiator press-fited along straight line, first cross-over block, two IGCT16 in two IGCT16 and second liang level circuits in first liang of level circuit, fly-wheel diode press-fits string 8 and comprises the second radiator press-fited along straight line, second cross-over block 10, two fly-wheel diodes 11 in first liang of level circuit and two fly-wheel diodes 11 in second liang of level circuit, absorption diode press-fits string 7 and comprises the 3rd radiator 13 press-fited along straight line, 3rd cross-over block, an absorption diode 12 in first liang of level circuit and an absorption diode 12 in second liang of level circuit,
Be understandable that, the power device of the IGCT16 of two two level block, fly-wheel diode 11 and these three difference in functionalitys of absorption diode 12 is press-fited bunchiness by the present invention respectively, and power model is compact, simple for structure.
Bracing frame, for supporting, IGCT press-fits string 9, fly-wheel diode press-fits string 8 and absorption diode press-fits string 7.
As preferably, bracing frame comprises the first parallel pressing plate 21 and the second pressing plate 22, the first end that IGCT press-fits string 9, fly-wheel diode press-fits string 8 and absorption diode press-fits string 7 is installed on the first pressing plate 21, and the second end that IGCT press-fits string 9, fly-wheel diode press-fits string 8 and absorption diode press-fits string 7 is installed on the second pressing plate 22.
First pressing plate 21 specifically comprises 2 supporting brackets 20 and 1 left pressing plate, and the second pressing plate also specifically comprises identical 2 supporting brackets 20 and 1 right pressing plate.IGCT is press-fited string 9 by bracing frame, fly-wheel diode press-fits string 8 and absorption diode press-fits string 7 and is tightened to a framework.
More specifically, this module also comprises support water pipe 19, and the first end supporting water pipe 19 is arranged on the first pressing plate 21, the second end supporting water pipe 19 is arranged on the second pressing plate 22, in addition, the number supporting water pipe 19 is four, comprises two water inlet pipes and two outlet pipes.
In addition, the first pressing plate 21 is also provided with main water inlet tube 14, the second pressing plate 22 is provided with primary flow pipe 15, and main water inlet tube 14 and primary flow pipe 15 are fastened on the first pressing plate 21 and the second pressing plate 22 respectively by clamp nut 23.
Be understandable that, supporting water pipe 19 can be thick stainless steel tube, support water pipe 19 between two by main water inlet tube 14 and primary flow pipe 15 parallel connection, four support water pipe 19 and have two water inlet pipes, two outlet pipes, every root supports on water pipe 19 and all arranges multiple water interface, will bear IGCT press-fits string 9 on the one hand, fly-wheel diode press-fits the pressure assembling force that string 8 and absorption diode press-fit string 7, leading to cooling water by water interface to support water pipe 19 inside is on the other hand power semiconductor heat radiation, guarantee that the heat that power semiconductor produces in the course of the work can effectively be taken away.In addition, choosing of thick stainless steel tube cross section will consider that thick stainless steel tube guarantees to bear the pressure assembling force of element on the one hand, will consider the cooling water flow that two electrical level power module heat radiations need, Proper Match flow resistance on the other hand.In addition, support the layout of water pipe 19 and will take into full account and distance between radiator and power semiconductor, ensure enough electric clearances, adapt to the electrical design requirement of high pressure, big current with this.
As preferably, common port between two IGCT16 in first liang of level circuit and being connected by the first L-type busbar between the common port between two fly-wheel diodes 11 in first liang of level circuit, the first L-type busbar is as the output of first liang of level circuit.Common port between two IGCT16 in second liang of level circuit and being connected by the second L-type busbar between the common port between two fly-wheel diodes 11 in second liang of level circuit, the second L-type busbar is as the output of second liang of level circuit.
Be understandable that, the output of first liang of level circuit here and the output of PH1 outgoing line busbar 2, second liang of level circuit and PH2 outgoing line busbar 3.
As preferably, this module also comprises Absorption Capacitance 6, being connected with the busbar of the 3rd radiator 13 of Absorption Capacitance 6, and the another side of Absorption Capacitance 6 is also fixed on bracing frame by electric capacity supporting insulator 18.Absorption Capacitance 6 correspondence is connected between two busbars on the 3rd radiator 13, absorbs on busbar 17 and leaves corresponding welded nut.
In addition, two T-shaped busbars connect three and press-fit group radiator, and as DC+ outgoing line busbar 1, and two T-shaped busbars are by DC+ short circuit busbar 4 short circuit, DC-outgoing line busbar 5 connects the radiator that three press-fit string, and has electric capacity connecting hole and be connected in series by two Absorption Capacitances 6.
As preferably, the busbar link of the first radiator, the second radiator and the 3rd radiator 13 in one plane.
As preferably, first liang of level circuit and second liang of level circuit share an absorption inductor, and absorption inductor is arranged at the external input terminals of the H bridge power model based on IGCT16.The absorption resistance of first liang of level circuit is arranged at the external input terminals of the H bridge power model based on IGCT16.The absorption resistance of second liang of level circuit is arranged at the external input terminals of the H bridge power model based on IGCT16.
Be understandable that, the present invention is by decrease uptake inductance and bind round position absorption resistance independent of outside press pack modules, makes module integration degree high, simple for structure, compact.In addition, absorbing circuit adopts the mode of public absorption inductor, decreases the absorption inductor of module.
A kind of H bridge power model based on IGCT provided by the invention, two IGCT in two IGCT and second liang level circuits in first liang of level circuit are press-fited into IGCT and press-fits string, two fly-wheel diodes in first liang of level circuit and two fly-wheel diodes in second liang of level circuit are press-fited into fly-wheel diode and press-fits string, an absorption diode in first liang of level circuit and an absorption diode in second liang of level circuit are press-fited into absorption diode and press-fits string, adopt the press-fit approach of three string datas, two two level circuits are integrated in one, substantially increase integrated level and the power density of H bridge power model, ensure that modular structure is succinct simultaneously, be easy to electrical connection and attended operation.
It should be noted that, in this manual, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (8)
1., based on a H bridge power model of IGCT, it is characterized in that, comprising:
IGCT press-fits string, fly-wheel diode press-fits string and absorption diode press-fits string, wherein, described IGCT press-fits string and comprises the first radiator press-fited along straight line, first cross-over block, two IGCT in two IGCT and second liang level circuits in first liang of level circuit, described fly-wheel diode press-fits string and comprises the second radiator press-fited along straight line, second cross-over block, two fly-wheel diodes in two fly-wheel diodes in described first liang of level circuit and described second liang of level circuit, described absorption diode press-fits string and comprises the 3rd radiator press-fited along straight line, 3rd cross-over block, an absorption diode in an absorption diode in described first liang of level circuit and described second liang of level circuit,
Bracing frame, for supporting, described IGCT press-fits string, fly-wheel diode press-fits string and absorption diode press-fits string.
2. H bridge power model as claimed in claim 1, it is characterized in that, common port between two IGCT in described first liang of level circuit is connected by the first L-type busbar with between the common port between two fly-wheel diodes in described first liang of level circuit, and described first L-type busbar is as the output of described first liang of level circuit.
3. H bridge power model as claimed in claim 2, it is characterized in that, common port between two IGCT in described second liang of level circuit is connected by the second L-type busbar with between the common port between two fly-wheel diodes in described second liang of level circuit, and described second L-type busbar is as the output of described second liang of level circuit.
4. H bridge power model as claimed in claim 1, it is characterized in that, the busbar link of described first radiator, the second radiator and the 3rd radiator in one plane.
5. H bridge power model as claimed in claim 1, is characterized in that, described first liang of level circuit and described second liang of level circuit share an absorption inductor, and described absorption inductor is arranged at the described external input terminals based on the H bridge power model of IGCT.
6. H bridge power model as claimed in claim 5, is characterized in that, the absorption resistance of described first liang of level circuit is arranged at the described external input terminals based on the H bridge power model of IGCT.
7. H bridge power model as claimed in claim 6, is characterized in that, the absorption resistance of described second liang of level circuit is arranged at the described external input terminals based on the H bridge power model of IGCT.
8. two electrical level power module as claimed in claim 1, it is characterized in that, support frame as described above comprises the first parallel pressing plate and the second pressing plate, the first end that described IGCT press-fits string, fly-wheel diode press-fits string and absorption diode press-fits string is installed on described first pressing plate, and described IGCT press-fits string, fly-wheel diode press-fits and to go here and there and the second end that absorption diode press-fits string is installed on described second pressing plate.
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| CN201510503686.0A CN105006954A (en) | 2015-08-14 | 2015-08-14 | IGCT (integrated gate commutated thyristor) based H-bridge power module |
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| CN201510503686.0A CN105006954A (en) | 2015-08-14 | 2015-08-14 | IGCT (integrated gate commutated thyristor) based H-bridge power module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106712459A (en) * | 2015-11-13 | 2017-05-24 | 国网智能电网研究院 | Full-bridge IGBT assembly |
| CN110098748A (en) * | 2018-01-30 | 2019-08-06 | 中车株洲电力机车研究所有限公司 | Three level blocks based on integrated gate commutated thyristor |
| CN112886793A (en) * | 2021-03-08 | 2021-06-01 | 清华大学 | Full-bridge power module structure based on crimping type IGCT |
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| CN101630921A (en) * | 2008-07-17 | 2010-01-20 | 荣信电力电子股份有限公司 | Method for realizing high-voltage high-power frequency transformator based on IGCT |
| CN102044985A (en) * | 2009-10-15 | 2011-05-04 | 株洲南车时代电气股份有限公司 | Phase module for three-level integrated gate-commutated thyristor frequency converter |
| CN102064676A (en) * | 2010-12-30 | 2011-05-18 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
| CN103633818A (en) * | 2013-11-01 | 2014-03-12 | 南车株洲电力机车研究所有限公司 | Semiconductor device power module |
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| CN101630921A (en) * | 2008-07-17 | 2010-01-20 | 荣信电力电子股份有限公司 | Method for realizing high-voltage high-power frequency transformator based on IGCT |
| CN102044985A (en) * | 2009-10-15 | 2011-05-04 | 株洲南车时代电气股份有限公司 | Phase module for three-level integrated gate-commutated thyristor frequency converter |
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| CN106712459A (en) * | 2015-11-13 | 2017-05-24 | 国网智能电网研究院 | Full-bridge IGBT assembly |
| CN110098748A (en) * | 2018-01-30 | 2019-08-06 | 中车株洲电力机车研究所有限公司 | Three level blocks based on integrated gate commutated thyristor |
| CN112886793A (en) * | 2021-03-08 | 2021-06-01 | 清华大学 | Full-bridge power module structure based on crimping type IGCT |
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