CN105071638B - A kind of two electrical level power modules based on IGCT - Google Patents
A kind of two electrical level power modules based on IGCT Download PDFInfo
- Publication number
- CN105071638B CN105071638B CN201510500188.0A CN201510500188A CN105071638B CN 105071638 B CN105071638 B CN 105071638B CN 201510500188 A CN201510500188 A CN 201510500188A CN 105071638 B CN105071638 B CN 105071638B
- Authority
- CN
- China
- Prior art keywords
- string
- press fitting
- igct
- electrical level
- level power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 62
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 38
- 238000003825 pressing Methods 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 241001269238 Data Species 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Landscapes
- Rectifiers (AREA)
Abstract
The invention discloses two electrical level power modules based on IGCT, including IGCT press fittings string, fly-wheel diode press fitting string and absorption diode press fitting string, wherein, IGCT press fitting strings include the first radiator, the first cross-over block and two IGCT being pressed along straight line, fly-wheel diode press fitting string includes the second radiator, the second cross-over block and two fly-wheel diodes being pressed along straight line, and absorption diode press fitting string includes the 3rd radiator and the 3rd cross-over block and an absorption diode being pressed along straight line；Support frame, for supporting IGCT press fittings string, fly-wheel diode press fitting string and absorption diode press fitting string, two electrical level power module provided by the invention, it is easy to later maintenance, reduce the use of busbar and the volume of whole two electrical level power module between each component, so that the electrical connection more concision and compact of whole two electrical level power module, reduces the stray inductance in inside modules circulation loop, has given full play to the ability of IGCT devices in itself.
Description
Technical field
The present invention relates to large power semiconductor device technical field, more particularly to a kind of two level powers based on IGCT
Module.
Background technology
With developing rapidly for semiconductor device art, with IGBT (Insulated Gate Bipolar Trans
Istor, insulated gate bipolar transistor), Power MOSFET (MOS field effect tube), IGCT (integrated Gate
Commutated Thyristors, integrated gate commutated thyristor) for the large power all-controlled device of representative obtain quick hair
Exhibition.Wherein, IGCT is the high full-control type power semiconductor of a kind of efficiency high, reliability, and it has concurrently, and switching speed is fast, loss
Low, the advantages that blocking voltage is high, output current is big, IGCT is applied in two level current transformer modules so that two level unsteady flows
Device module has the fan-out capability of super high power.
Two level current transformer modular circuits include 2 IGCT devices, 3 diode components, 2 electric capacity and water cooling phase
Device is closed, is typically that the scattered assembling of these components is recycled into busbar connection in the prior art, this kind of assembling mode not only increases
The big volume of circuit structure engineering, and the stray inductance of circuit is considerably increased, and IGCT devices connect to circuit
The Spreading requirements of middle stray inductance are more harsh, and also therefore, the increase of stray inductance means that the ability of IGCT devices can not obtain
To giving full play to.Installed in addition, if IGCT (PCC) powers are scattered, to the maintenance workers of IGCT (PCC) powers after being also unfavorable for
Make.
Therefore, how a kind of stray inductance in volume and circuit is small and two level work(easy to maintain based on IGCT
Rate module is that those skilled in the art need to solve the problems, such as at present.
The content of the invention
It is an object of the invention to provide a kind of two electrical level power modules based on IGCT, it is easy to later maintenance, reduces each
The volume of the use of busbar and whole two electrical level power module between individual component so that whole two electrical level power module it is electric
Connection more concision and compact, reduces the stray inductance in inside modules circulation loop, has given full play to the energy of IGCT devices in itself
Power.
In order to solve the above technical problems, the invention provides a kind of two electrical level power modules based on IGCT, including：
IGCT press fittings string, fly-wheel diode press fitting string and absorption diode press fitting string, wherein, the IGCT press fittings string bag
Include the first radiator, the first cross-over block and two IGCT being pressed along straight line, the fly-wheel diode press fitting string bag
Include the second radiator, the second cross-over block and two fly-wheel diodes being pressed along straight line, the absorption diode pressure
Dress string includes the 3rd radiator and the 3rd cross-over block and an absorption diode being pressed along straight line；
Support frame, for supporting the IGCT press fittings string, fly-wheel diode press fitting string and absorption diode press fitting string.
Preferably, the module also includes Absorption Capacitance, one side of the Absorption Capacitance and the busbar of the 3rd radiator
Connection, the another side of the Absorption Capacitance is simultaneously fixed on support frame as described above by electric capacity supporting insulator.
Preferably, the module also includes main water inlet tube and primary flow pipe, and the main water inlet tube and primary flow pipe are arranged on institute
State one side of support frame.
Preferably, the absorption diode press fitting string also includes the 4th radiator and the 4th cross-over block of press fitting so that
The height that the height of the absorption diode press fitting string is pressed string and fly-wheel diode press fitting string with the IGCT is equal.
Preferably, support frame as described above includes parallel the first pressing plate and the second pressing plate, the IGCT press fittings string, the pole of afterflow two
Pipe press fitting is gone here and there and the first end of absorption diode press fitting string is installed on first pressing plate, the IGCT press fittings string, is continued
Second end of stream diode press fitting string and absorption diode press fitting string is installed on second pressing plate.
Preferably, looked up from first pressing plate to the side of second pressing plate, the IGCT press fittings string, the pole of afterflow two
The position of pipe press fitting string and absorption diode press fitting string is located on three summits of triangle.
Preferably, multi-layer thin is passed through between the terminals of first radiator, the second radiator and the 3rd radiator
Copper coin or red copper band connection.
Preferably, the module also includes support water pipe, and the first end of the support water pipe is arranged on first pressing plate,
Second end of the support water pipe is arranged on second pressing plate.
Preferably, the number of the support water pipe is four.
Preferably, there are two water inlet pipes and two outlet pipes in four supports water pipe.
A kind of two electrical level power modules based on IGCT provided by the invention, using the press-fit approach of three string datas, by two electricity
Two IGCT, two fly-wheel diodes and an absorption diode in flat power model are pressed bunchiness respectively, are easy to the later stage
Safeguard, reduce the use of busbar and the volume of whole two electrical level power module between each component so that whole two level
The electrical connection of power model more concision and compact, reduces the stray inductance in inside modules circulation loop, gives full play to
The ability of IGCT devices in itself.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, below will be to institute in prior art and embodiment
The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is a kind of dimensional structure diagram of two electrical level power modules based on IGCT provided by the invention；
Fig. 2 is a kind of front view of two electrical level power modules based on IGCT provided by the invention；
Fig. 3 is a kind of side view of two electrical level power modules based on IGCT provided by the invention；
Fig. 4 is a kind of top view of two electrical level power modules based on IGCT provided by the invention；
Fig. 5 is a kind of circuit theory diagrams of two electrical level power modules based on IGCT provided by the invention；
Fig. 6 is a kind of structural representation of Absorption Capacitance busbar provided by the invention；
A kind of Fig. 7 structural representations of T-shaped busbar provided by the invention；
In Fig. 1-Fig. 4：
Main water inlet tube -1, primary flow pipe -2, electric capacity supporting insulator -3, left pressing plate -4, absorption diode press fitting
String -5, IGCT press fittings string -6, support water pipe -7, right pressing plate -8, fly-wheel diode press fitting string -9, supporting plate -10, outlet
Busbar -11, the second radiator -12, the 3rd cross-over block -13, Absorption Capacitance -14, Absorption Capacitance busbar -15, afterflow two
Pole pipe -16, absorption diode -17 and IGCT -18.
Embodiment
The core of the present invention is to provide a kind of two electrical level power modules based on IGCT, is easy to later maintenance, reduces each
The volume of the use of busbar and whole two electrical level power module between individual component so that whole two electrical level power module it is electric
Connection more concision and compact, reduces the stray inductance in inside modules circulation loop, has given full play to the energy of IGCT devices in itself
Power.
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Fig. 1, Fig. 2, Fig. 3, Fig. 4 and Fig. 5 are refer to, wherein, Fig. 1 is a kind of two electricity based on IGCT provided by the invention
The dimensional structure diagram of flat power model；Fig. 2 is a kind of master of two electrical level power modules based on IGCT provided by the invention
View；Fig. 3 is a kind of side view of two electrical level power modules based on IGCT provided by the invention；Fig. 4 is provided by the invention
A kind of top view of two electrical level power modules based on IGCT；Fig. 5 is a kind of two level work(based on IGCT provided by the invention
The circuit theory diagrams of rate module.
Two electrical level power module, including：
IGCT press fittings string 6, fly-wheel diode press fitting string 9 and absorption diode press fitting string 5, wherein, the bag of IGCT press fittings string 6
The first radiator, the first cross-over block and two IGCT18 being pressed along straight line are included, fly-wheel diode press fitting string 9 includes
The second radiator 12, the second cross-over block and two fly-wheel diodes 16 being pressed along straight line, absorption diode press fitting
String 5 includes the 3rd radiator and the 3rd cross-over block 13 and an absorption diode 17 being pressed along straight line；
In addition, the number of the first radiator here, the second radiator and the 3rd radiator is 3.First insulation
The number of cushion block is 2, and the number of the second cross-over block is 2, and the number of the 3rd cross-over block is 3.
Preferably, multilayer is passed through between the terminals of the first radiator, the second radiator 12 and the 3rd radiator
Sheet copper or red copper band connection.
It is understood that in view of in practical application, one is there may be between the radiator of three press fitting string (PCC) powers
Fixed difference in height, the connections of the terminals of each radiator can overlap (or the mother that is flexible coupling by multilayer sheet copper or copper belt
Row) realize.
In addition, the radiator used in the present invention preferably from by aluminum alloy material inner disc stainless steel tube integrally cast pressure and
Into radiator, radiator two sides are evenly equipped with stainless steel tube, can carry out two-side radiation, and the rear portion of radiator is machined with wiring
End, can be directly electrically connected.The aluminium alloy plate that the present invention uses is a monoblock thickness pressing plate, it is ensured that it has enough strong
Degree, can at least bear 120kN pressure and make every effort to thick pressing plate deflection it is small as much as possible.
Preferably, absorption diode press fitting string 5 also includes the 4th radiator and the 4th cross-over block of press fitting so that
The height of absorption diode press fitting string 5 is equal with the height of IGCT press fittings string 6 and fly-wheel diode press fitting string 9.
It is understood that IGCT press fittings string 6 includes two IGCT18, fly-wheel diode press fitting string 9 includes two afterflows
Diode 16, and absorption diode press fitting string 5 only includes an absorption diode 17, in order that waterway structure is symmetrical, it is convenient
Layout, increase the 4th radiator and the 4th cross-over block on absorption diode press fitting string 5 so that absorption diode press fitting string 5
Height and IGCT press fitting string 6 and fly-wheel diode press fitting string 9 height it is identical.
Support frame, for supporting IGCT press fittings string 6, fly-wheel diode press fitting string 9 and absorption diode press fitting string 5.
Preferably, support frame includes parallel the first pressing plate and the second pressing plate, IGCT press fittings string, fly-wheel diode pressure
The first end of dress string 9 and absorption diode press fitting string 5 is installed on the first pressing plate, IGCT press fittings string, fly-wheel diode pressure
Second end of dress string 9 and absorption diode press fitting string 5 is installed on the second pressing plate.
It is understood that the first pressing plate specifically includes 2 supporting plates 10 and 1 left pressing plate 4, the second pressing plate also specifically wraps
Include 2 supporting plates 10 of identical and 1 right pressing plate 8.Support frame is by IGCT press fittings string 6, fly-wheel diode press fitting string 9 and absorbs
Diode press fitting string 5 is tightened to a framework.
Preferably, looked up from the first pressing plate to the side of the second pressing plate, IGCT press fittings string 6, fly-wheel diode press fitting
The position of string 9 and absorption diode press fitting string 5 is located on three summits of triangle.
More specifically, the module also includes main water inlet tube 1 and primary flow pipe 2, and main water inlet tube 1 and primary flow pipe 2 are installed
On one side of support frame.
It is understood that main water inlet tube 1 and primary flow pipe 2 are arranged on the one of two electrical level power modules in the present invention
Side so that the volume of two electrical level power modules accordingly reduces.
More specifically, the module also includes support water pipe 7, and the first end of support water pipe 7 is arranged on the first pressing plate, branch
The second end for supportting water pipe 7 is arranged on the second pressing plate, in addition, the number of support water pipe 7 is four, including two water inlet pipes and two
Individual outlet pipe.
It is understood that support water pipe 7 can be thick stainless steel tube, the left and right sides is tapped, and support water pipe 7 is two-by-two
It is in parallel by main water inlet tube 1 and primary flow pipe 2, there are two water inlet pipes, two outlet pipes, every support in four support water pipes 7
Multiple water interfaces are all arranged on water pipe 7, on the one hand to bear IGCT press fittings string 6, fly-wheel diode press fitting string 9 and absorption two
The pressure assembling force of pole pipe press fitting string 5, it is on the other hand power semiconductor to logical cooling water inside water pipe 7 is supported by water interface
Radiating, it is ensured that power semiconductor in the course of the work can effectively be taken away by caused heat.In addition, thick stainless steel tube section
Selection on the one hand to consider that thick stainless steel tube guarantees to bear the pressure assembling force of element, on the other hand to consider two level powers
The cooling water flow that module heat dissipating needs, Proper Match flow resistance.In addition, the arrangement of support water pipe 7 to take into full account and radiator
And the distance between power semiconductor, guarantee have enough electric clearances, with this come adapt to high pressure, the electrical design of high current will
Ask.
Preferably, the module also includes Absorption Capacitance 14, one side of Absorption Capacitance 14 and the busbar of the 3rd radiator
Connection, the another side of Absorption Capacitance 14 is simultaneously fixed on support frame by electric capacity supporting insulator 3.
More specifically, Absorption Capacitance 14 is directly parallel to the terminals of radiator corresponding to device, positioned at module top,
Absorption Capacitance 14 is not fitted in press fitting string, reduces press fitting difficulty, while make it that Absorption Capacitance 14 is corresponding with aerial lug
Positional precision reduce.Absorption Capacitance 14 is corresponding to be connected between two busbars on the 3rd radiator, Absorption Capacitance busbar 15
On leave corresponding welded nut and (refer to Fig. 6, Fig. 6 is a kind of structural representation of Absorption Capacitance busbar provided by the invention
Figure), middle welded nut is used for and aerial lug, and the welded nut on side is connected with electric capacity supporting insulator 3, and electric capacity is entered
Row support is fixed.
It is understood that connect caused stray inductance to reduce Absorption Capacitance 14 as much as possible, absorption can be allowed
Busbar between electric capacity 14 and absorption diode 17 is short as much as possible, because the stray inductance in the loop is to IGCT18 performance impacts
It is larger, IGCT18 abilities has been obtained larger performance with this arrangement.
Furthermore it is also possible to by the way that the bending Absorption Capacitance 14 of Absorption Capacitance busbar 15 is embedded in module to greatest extent
Portion so that module volume accordingly reduces, while its be separately configured above the welded nut that is connected with electric capacity supporting insulator 3 and
With the welded nut of aerial lug so that installation and line are simplified.
Preferably, the leading-out terminal of two electrical level power modules based on IGCT18 is stack bus bar.
It is understood that the present invention improves scratching for busbar outlet position while using stack bus bar using bending
Degree, increase the size allowed and site error of two electrical level power modules and external connection, reduce itself and external connection
Position accuracy demand.
In addition, the two level IGCT18 module external interfaces that the present invention designs have two kinds：Electric interfaces and mechanical interface.Machine
Tool interface is mounting hole and hole for hoist in supporting plate 10, installation and transport for module.Electric interfaces have DC+ busbars, DC-
Busbar, PH busbars composition, busbar are overlapped using multilayer sheet copper or copper belt, and module outgoing line is " T " in rear end and busbar
Shape (refer to Fig. 7, a kind of Fig. 7 structural representations of T-shaped busbar provided by the invention), and busbar shorted on one end is located at circuit top
The corresponding pole position of IGCT18, fly-wheel diode 16, absorption diode 17 with bottom, the other end are directly drawn from the "T"-shaped other end.
Increased while corresponding electric clearance is ensured by the amount of deflection of bending busbar, so that module outgoing line busbar 11 with
The positional precision of external connection is minimized, and facilitates the wiring in later stage.
The maintenance of the invention for greatly facilitating module, single tandem of the prior art design, whichsoever semiconductor element
Part damages, it is necessary to thoroughly dismantles whole power model, is unfavorable for engineering application.The design of three string datas solves this well
Problem, it can individually be operated for problematic power string, without decompressing other two power string components.
A kind of two electrical level power modules based on IGCT provided by the invention, using the press-fit approach of three string datas, by two electricity
Two IGCT, two fly-wheel diodes and an absorption diode in flat power model are pressed bunchiness respectively, are easy to the later stage
Safeguard, reduce the use of busbar and the volume of whole two electrical level power module between each component so that whole two level
The electrical connection of power model more concision and compact, reduces the stray inductance in inside modules circulation loop, gives full play to
The ability of IGCT devices in itself.
It should be noted that in this manual, such as first and second or the like relational terms are used merely to one
Individual entity or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or operate it
Between any this actual relation or order be present.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Cover including for nonexcludability, so that process, method, article or equipment including a series of elements not only include those
Key element, but also the other element including being not expressly set out, or also include for this process, method, article or set
Standby intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Other identical element in the process including the key element, method, article or equipment also be present.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (9)
- A kind of 1. two electrical level power modules based on IGCT, it is characterised in that including：IGCT press fittings string, fly-wheel diode press fitting string and absorption diode press fitting string, wherein, the IGCT press fittings string includes edge The first radiator, the first cross-over block and two IGCT of straight line press fitting, the fly-wheel diode press fitting string include edge The second radiator, the second cross-over block and two fly-wheel diodes of straight line press fitting, the absorption diode press fitting string Including the 3rd radiator and the 3rd cross-over block and an absorption diode being pressed along straight line；Support frame, for supporting the IGCT press fittings string, fly-wheel diode press fitting string and absorption diode press fitting string；Wherein, the absorption diode press fitting string also includes the 4th radiator and the 4th cross-over block of press fitting so that the suction Receiving the height of diode press fitting string, and the IGCT is pressed string and the height of fly-wheel diode press fitting string is equal；Wherein, the leading-out terminal of two electrical level power module is the laminated bus bar of bending-type.
- 2. two electrical level power module as claimed in claim 1, it is characterised in that the module also includes Absorption Capacitance, the suction The one side for receiving electric capacity is connected with the busbar of the 3rd radiator, and the another side of the Absorption Capacitance passes through electric capacity supporting insulator It is fixed on support frame as described above.
- 3. two electrical level power module as claimed in claim 1, it is characterised in that the module also includes main water inlet tube and main water outlet Pipe, the main water inlet tube and primary flow pipe are arranged on one side of support frame as described above.
- 4. two electrical level power module as claimed in claim 1, it is characterised in that support frame as described above includes the first parallel pressing plate With the second pressing plate, the first end of the IGCT press fittings string, fly-wheel diode press fitting string and absorption diode press fitting string is respectively mounted On first pressing plate, the second end of the IGCT press fittings string, fly-wheel diode press fitting string and absorption diode press fitting string It is installed on second pressing plate.
- 5. two electrical level power module as claimed in claim 4, it is characterised in that from first pressing plate to second pressing plate Side look up, the position of IGCT press fitting string, fly-wheel diode press fitting string and absorption diode press fitting string is located at triangle On three summits of shape.
- 6. two electrical level power module as claimed in claim 5, it is characterised in that first radiator, the second radiator with And the 3rd radiator terminals between pass through multilayer sheet copper or red copper band connection.
- 7. two electrical level power modules as described in claim any one of 4-6, it is characterised in that the module also includes support water Pipe, the first end of the support water pipe are arranged on first pressing plate, and the second end of the support water pipe is arranged on described the On two pressing plates.
- 8. two electrical level power module as claimed in claim 7, it is characterised in that the number of the support water pipe is four.
- 9. two electrical level power module as claimed in claim 8, it is characterised in that have two water inlets in four supports water pipe Pipe and two outlet pipes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510500188.0A CN105071638B (en) | 2015-08-14 | 2015-08-14 | A kind of two electrical level power modules based on IGCT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510500188.0A CN105071638B (en) | 2015-08-14 | 2015-08-14 | A kind of two electrical level power modules based on IGCT |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105071638A CN105071638A (en) | 2015-11-18 |
| CN105071638B true CN105071638B (en) | 2017-11-10 |
Family
ID=54500946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510500188.0A Active CN105071638B (en) | 2015-08-14 | 2015-08-14 | A kind of two electrical level power modules based on IGCT |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105071638B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107592103B (en) * | 2017-09-20 | 2024-01-16 | 全球能源互联网研究院 | Microsecond electronic switching device |
| CN108075620B (en) * | 2018-01-02 | 2024-04-09 | 清华四川能源互联网研究院 | High-power unit structure formed by IGCT thyristors |
| CN110098748A (en) * | 2018-01-30 | 2019-08-06 | 中车株洲电力机车研究所有限公司 | Three level blocks based on integrated gate commutated thyristor |
| CN110300509A (en) * | 2019-06-29 | 2019-10-01 | 联想(北京)有限公司 | A kind of radiator |
| CN112968591B (en) * | 2021-03-08 | 2022-07-08 | 清华大学 | High-power water-cooling unit structure based on IGCT thyristor constitutes |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101795064A (en) * | 2010-03-11 | 2010-08-04 | 荣信电力电子股份有限公司 | Power phase module based on IEGT |
| CN102064676A (en) * | 2010-12-30 | 2011-05-18 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
| CN103633818A (en) * | 2013-11-01 | 2014-03-12 | 南车株洲电力机车研究所有限公司 | Semiconductor device power module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008253073A (en) * | 2007-03-30 | 2008-10-16 | Tdk Corp | Power supply system |
-
2015
- 2015-08-14 CN CN201510500188.0A patent/CN105071638B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101795064A (en) * | 2010-03-11 | 2010-08-04 | 荣信电力电子股份有限公司 | Power phase module based on IEGT |
| CN102064676A (en) * | 2010-12-30 | 2011-05-18 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
| CN103633818A (en) * | 2013-11-01 | 2014-03-12 | 南车株洲电力机车研究所有限公司 | Semiconductor device power module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105071638A (en) | 2015-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105071638B (en) | A kind of two electrical level power modules based on IGCT | |
| CN104638944B (en) | A kind of inverter | |
| CN104201867B (en) | Three-level IGBT power cabinet based on heat pipe radiator | |
| US20130100716A1 (en) | High-power medium-voltage drive power cell | |
| CN201623650U (en) | A Modular Mounted Inverter | |
| CN201616760U (en) | Water-cooled three-phase diode-clamped three-level inverter power module | |
| CN103051208B (en) | Frequency conversion power module of all-in-one machine of explosive-proof frequency conversion motor | |
| CN102158057B (en) | Modularized power cabinet | |
| CN101741227A (en) | Water-cooled three-phase diode-clamped three-level inverter power module | |
| CN201750356U (en) | An installation cabinet for a photovoltaic inverter | |
| WO2016107452A1 (en) | Direct current breaker bridge module | |
| CN104201866B (en) | Insulated gate bipolar transistor three-level power cabinet | |
| CN105763076A (en) | Water-cooling type power unit | |
| CN103354235B (en) | Thyristor converter valve module | |
| CN104883077B (en) | The level IGCT phase modules of compact three | |
| CN108075620A (en) | The power unit structure that a kind of IGCT thyristors are formed | |
| CN204290687U (en) | Frequency converter | |
| CN207475418U (en) | (PCC) power and Modularized multi-level converter sub-module | |
| CN208539792U (en) | A modular water-cooled power unit | |
| CN204257409U (en) | The capacitance component of frequency converter and frequency converter | |
| CN204316307U (en) | A kind of high-power photovoltaic cabinet cabinet | |
| CN207706065U (en) | A kind of high power water cooling power cell | |
| CN105450044A (en) | Triple-symmetry three-level IGCT phase module | |
| CN201726303U (en) | High-power high-voltage inverter power unit | |
| CN207638593U (en) | A special book-type driver for four-phase switched reluctance motor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |