CN106712459A - Full-bridge IGBT assembly - Google Patents
Full-bridge IGBT assembly Download PDFInfo
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- CN106712459A CN106712459A CN201510771682.0A CN201510771682A CN106712459A CN 106712459 A CN106712459 A CN 106712459A CN 201510771682 A CN201510771682 A CN 201510771682A CN 106712459 A CN106712459 A CN 106712459A
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- igbt
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- busbar
- bridge type
- unit
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Abstract
The invention relates to a full-bridge IGBT assembly comprising a press fitting unit, a lead-out bus bar unit, and an IGBT device unit. The press fitting unit consists of a press fitting structure element (4) formed by two flanges and four metal support beams and an insulating support (2). The IGBT device unit and the lead-out bus bar unit are pressed and fixed by the press fitting structure element (4) and the insulating support (2). According to the full-bridge IGBT assembly, H-bridge full-bridge topology is constructed in one IGBT press fitting assembling group and a minimized design of stray parameters during the H-bridge full-bridge model working process is realized. Moreover, the structural integration of the high-power IGBT switch assembly can be improved; the power capacity of the assembly under the unit volume can be increased; and the assembly reliability can be improved.
Description
Technical field
The invention belongs to flexible DC power transmission and direct current network field, a kind of full-bridge type IGBT components of specific design.
Background technology
IGBT is the multiple device of MOSFET and bipolar transistor, the characteristics of its existing MOSFET easily drives, and has the advantages that power transistor high voltage, high current, at present just being widely used in property technical field of direct current power transmission.The features such as its high reliability, big through-current capability, short circuit failure mode, becomes the highly reliable first-selected device form for requiring equipment in flexible direct current power transmission system.
H bridge full bridge units are the topological forms of conventional convertor unit in large-capacity power electronics.The continuous lifting of equipment capacity at present it is also proposed requirement to H bridge full bridge unit capacity.Therefore, its advantage is being embodied using the H bridges full bridge unit of crimp type IGBT.And the pressing component of crimp type IGBT is most crucial component in H bridge full bridge units.
Therefore need to invent a kind of full-bridge type IGBT components to realize using the high-capacity H bridge full bridge unit of compression joint type IGBT.
The content of the invention
In order to solve the above-mentioned deficiency in the presence of prior art, the present invention provides a kind of full-bridge type IGBT components, can improve the structure assembly degree of high-power IGBT switch module, increases the power capacity under component unit volume.
The present invention provides a kind of full-bridge type IGBT components, including press mounting structure part (4), master row insulating support (2), IGBT device (5), radiator (6), the middle busbar (1), bridging of drawing draw busbar (3)；
The IGBT device (5), radiator (6), centre extraction busbar (1), bridging are drawn busbar (3) and are carried out closely press-fiting connection by press mounting structure (4), and middle extraction busbar (1) and the bridging are drawn busbar (3) and be fixed on the press mounting structure part (4) by the master row insulating support (2).
Preferably, the IGBT includes that 4 IGBT press-fit and is divided into two groups of IGBT device combinations, and one group of IGBT device is combined as common collector arrangement, and another group of IGBT device is combined as common transmitting collection arrangement；
The colelctor electrode that the common collector is arranged as two IGBT is oppositely arranged, medium design radiator；
The emitter stage that the common emitter is arranged as two IGBT is oppositely arranged, medium design radiator.
Preferably, between two groups of IGBT devices, collector and emitter is drawn busbar (3) and is attached by the radiator (6) and bridging respectively.
Preferably, the middle busbar (1) of drawing is designed using copper bar；The bridging draws busbar (3) using the copper bar that is flexible coupling.
Preferably, the IGBT both sides are designed with radiator (6).
Preferably, the middle end tab for drawing busbar (1) is located between two groups of IGBT devices combinations.
Preferably, the radiator (6) of one end that the end tab that busbar (3) is drawn in the bridging is combined with one of which IGBT device is in contact, and the radiator (6) of the opposite side that another end tab that busbar (3) is drawn in the bridging is combined with another group of IGBT device is in contact.
Compared with prior art, excellent beneficial effect of the invention is：
1., by a kind of heretofore described full-bridge type IGBT components, the structure H bridge full-bridge topologies in one group of IGBT pressing component are realized；
2., by a kind of heretofore described full-bridge type IGBT components, the minimum design of stray parameter in the H bridge full-bridge modules courses of work is realized；
3. by a kind of heretofore described full-bridge type IGBT components, the structure assembly degree of high-power IGBT switch module can be improved, increase the power capacity under component unit volume；
4., by a kind of heretofore described full-bridge type IGBT components, the reliability of component can be improved.
Brief description of the drawings
Fig. 1 is full-bridge type IGBT modular construction schematic diagrames of the invention；
Fig. 2 is full-bridge type IGBT component side views of the invention；
Fig. 3 is full-bridge type IGBT components mechanical electric connection diagram of the invention；
Fig. 4 is full-bridge type IGBT assemble cross-sections of the invention；
Fig. 5 is H bridges full-bridge electric topology figure of the invention；
Wherein, busbar, 2- master row insulatings support, 3- bridging extractions busbar, 4- press mounting structures part, 5-IGBT devices, 6- radiators are drawn in the middle of 1-.
Specific embodiment
For a better understanding of the present invention, present disclosure is described further with reference to Figure of description and example.
The present invention provides a kind of full-bridge type IGBT components, including press mounting structure part (4), master row insulating support (2), IGBT device (5), radiator (6), the middle busbar (1), bridging of drawing draw busbar (3)；
The IGBT device (5), radiator (6), centre extraction busbar (1), bridging are drawn busbar (3) and are carried out closely press-fiting connection by press mounting structure (4), and middle extraction busbar (1) and the bridging are drawn busbar (3) and be fixed on the press mounting structure part (4) by the master row insulating support (2).
As shown in figure 5, the present invention is applied to H bridge full bridge units, scope of the present invention is not comprising the capacitor and its connecting wire in H bridges.
As shown in figure 1, IGBT device 5, radiator 6, middle extraction busbar 1, bridging extraction busbar 3 etc. are carried out closely press-fiting connection and are dielectrically separated from by a kind of full-bridge type IGBT components involved in the present invention by press mounting structure part 4.
In a kind of full-bridge type IGBT components each device arrangements and connected mode as shown in Figure 3, according to being sequentially described as from left to right：One of end tab that busbar 3 is drawn in bridging is contacted with radiator 6,Radiator 6 is in contact with the colelctor electrode of IGBT1 devices 5,The transmitting collection of IGBT1 devices 5 is in contact with second radiator 6,Radiator 6 is in contact with the transmitting collection of IGBT3 devices,The colelctor electrode of IGBT3 devices is in contact with the 3rd radiator 6,The end tab of busbar 1 is drawn in the middle of being designed between 3rd radiator 6 and the 4th radiator 6,4th radiator 6 is in contact with the emitter stage of IGBT2 devices,The colelctor electrode of IGBT2 devices is connected with the 5th radiator 6,Radiator 6 is in contact with the colelctor electrode of IGBT4 devices,The emitter stage of IGBT4 devices is connected with the 6th radiator 6,6th radiator 6 is in contact connection with another end tab that busbar 3 is drawn in bridging,So as to constitute H bridges full bridge structure as shown in Figure 5.
Centre is drawn busbar 1 and draws busbar 3 as the unit inlet-outlet line in H bridge full bridge units with bridging, realizes H bridge functions.
Draw busbar 1 and be fixed on 4 press mounting structure parts with bridging extraction busbar 3 because there is potential difference in the course of the work, therefore centre is drawn into busbar 1 by master row insulating support 2 with bridging extraction busbar 3 in centre.
Embodiments of the invention are these are only, are not intended to limit the invention that all any modification, equivalent substitution and improvements within the spirit and principles in the present invention, done etc. are all contained within the pending scope of the presently claimed invention of application.
Claims (10)
1. a kind of full-bridge type IGBT components, it is characterised in that including press-fiting unit, drawing busbar unit and IGBT
Device cell；
It is described press-fit unit include the press mounting structure part (4) being made up of two flanges and 4 metal support beams and
Insulating support (2)；The IGBT device unit and the extraction busbar unit by press mounting structure part (4) and
Insulating support (2) is press-fited and is fixed.
2. full-bridge type IGBT components as claimed in claim 1, it is characterised in that the insulating support (2)
The end tab of the extraction busbar unit is fixed on by the press mounting structure (4) therein by insulated bolt
On individual flange.
3. full-bridge type IGBT components as claimed in claim 1, it is characterised in that the IGBT device unit
Including the IGBT device (5), electric capacity and the radiator (6) that are connected by wire；The IGBT device (5)
Both sides are provided with the radiator (6)；Mutually it is electrically connected by radiator between the IGBT device (5).
4. full-bridge type IGBT components as claimed in claim 3, it is characterised in that the IGBT device (5)
Press-fit including 4 IGBT and be divided into two groups of IGBT device combinations, one group of IGBT device is combined as common collector cloth
Put, another group of IGBT device is combined as common transmitting collection arrangement；
The colelctor electrode that the common collector is arranged as two IGBT is oppositely arranged；The common emitter is arranged as two
The emitter stage of IGBT is oppositely arranged.
5. full-bridge type IGBT components as claimed in claim 1, it is characterised in that；IGBT device described in two
It is electrically connected by radiator between combination.
6. full-bridge type IGBT components as claimed in claim 1, it is characterised in that the extraction busbar unit
Busbar (1) is drawn including centre and busbar (3) is drawn in bridging；
The end tab that busbar (1) is drawn in the middle of described is located between two groups of IGBT devices；The bridging draws female
Row (3) is connected with the radiator at press mounting structure (4) two ends, leads to press mounting structure (4) outside.
7. full-bridge type IGBT components as claimed in claim 1, it is characterised in that the flange includes upper method
Blue and lower flange, flange described in two is connected by screwed four metallic rods in end, and is fixed by nut.
8. full-bridge type IGBT components as claimed in claim 4, it is characterised in that busbar is drawn in the middle of described
(1) designed using copper bar；The bridging draws busbar (3) using the copper bar that is flexible coupling.
9. full-bridge type IGBT components as claimed in claim 1, it is characterised in that the insulating support (2)
Busbar (1) is drawn in the middle of respectively will be described and the bridging is drawn busbar (3) and is fixed on the relative of the flange
Both sides.
10. full-bridge type IGBT components as claimed in claim 1, it is characterised in that the centre (1) and
The bridging draws busbar (3) in " S " shape, and is provided with screw thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510771682.0A CN106712459A (en) | 2015-11-13 | 2015-11-13 | Full-bridge IGBT assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510771682.0A CN106712459A (en) | 2015-11-13 | 2015-11-13 | Full-bridge IGBT assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106712459A true CN106712459A (en) | 2017-05-24 |
Family
ID=58930075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510771682.0A Pending CN106712459A (en) | 2015-11-13 | 2015-11-13 | Full-bridge IGBT assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106712459A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585432A (en) * | 2017-09-28 | 2019-04-05 | 株洲中车时代电气股份有限公司 | A kind of IGBT power module |
| CN109585435A (en) * | 2017-09-28 | 2019-04-05 | 株洲中车时代电气股份有限公司 | A kind of power device |
| WO2020020140A1 (en) * | 2018-07-24 | 2020-01-30 | 全球能源互联网研究院有限公司 | Diode full-bridge dual-stage sub-module |
| CN111327207A (en) * | 2018-12-13 | 2020-06-23 | 许继集团有限公司 | IGBT power unit and submodule with same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020180037A1 (en) * | 2001-05-30 | 2002-12-05 | Hitachi, Ltd. | Semiconductor device |
| CN104270016A (en) * | 2014-09-28 | 2015-01-07 | 国家电网公司 | Novel valve tower of thyristor converter valve |
| CN104701096A (en) * | 2014-12-29 | 2015-06-10 | 国家电网公司 | Direct current breaker bridge type module |
| CN105006954A (en) * | 2015-08-14 | 2015-10-28 | 南车株洲电力机车研究所有限公司 | IGCT (integrated gate commutated thyristor) based H-bridge power module |
-
2015
- 2015-11-13 CN CN201510771682.0A patent/CN106712459A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020180037A1 (en) * | 2001-05-30 | 2002-12-05 | Hitachi, Ltd. | Semiconductor device |
| CN104270016A (en) * | 2014-09-28 | 2015-01-07 | 国家电网公司 | Novel valve tower of thyristor converter valve |
| CN104701096A (en) * | 2014-12-29 | 2015-06-10 | 国家电网公司 | Direct current breaker bridge type module |
| CN105006954A (en) * | 2015-08-14 | 2015-10-28 | 南车株洲电力机车研究所有限公司 | IGCT (integrated gate commutated thyristor) based H-bridge power module |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585432A (en) * | 2017-09-28 | 2019-04-05 | 株洲中车时代电气股份有限公司 | A kind of IGBT power module |
| CN109585435A (en) * | 2017-09-28 | 2019-04-05 | 株洲中车时代电气股份有限公司 | A kind of power device |
| CN109585435B (en) * | 2017-09-28 | 2020-07-03 | 株洲中车时代电气股份有限公司 | Power device |
| CN109585432B (en) * | 2017-09-28 | 2020-07-14 | 株洲中车时代电气股份有限公司 | IGBT power module |
| WO2020020140A1 (en) * | 2018-07-24 | 2020-01-30 | 全球能源互联网研究院有限公司 | Diode full-bridge dual-stage sub-module |
| CN111327207A (en) * | 2018-12-13 | 2020-06-23 | 许继集团有限公司 | IGBT power unit and submodule with same |
| CN111327207B (en) * | 2018-12-13 | 2021-05-18 | 许继集团有限公司 | IGBT power unit and submodule with same |
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Application publication date: 20170524 |