CN206294085U - The arrangement of metal-oxide-semiconductor in new-energy automobile power driver module - Google Patents
The arrangement of metal-oxide-semiconductor in new-energy automobile power driver module Download PDFInfo
- Publication number
- CN206294085U CN206294085U CN201621456051.6U CN201621456051U CN206294085U CN 206294085 U CN206294085 U CN 206294085U CN 201621456051 U CN201621456051 U CN 201621456051U CN 206294085 U CN206294085 U CN 206294085U
- Authority
- CN
- China
- Prior art keywords
- copper foil
- power mos
- phases
- bus
- bridge arm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Inverter Devices (AREA)
Abstract
The utility model discloses a kind of arrangement of metal-oxide-semiconductor in new-energy automobile power driver module, this structure sets three groups of positive and negative Copper Foils of dc bus on pcb board and sets AC three-phase output Copper Foil therebetween, multiple power MOS pipes of each upper bridge arm are set on the positive Copper Foil of dc bus, multiple power MOS pipes of each lower bridge arm are respectively provided with AC three-phase output Copper Foil, the electrode of each metal-oxide-semiconductor presses the connection of three-phase bridge type converter principle, multiple power MOS pipe tops are provided with direct-flow positive pole rectangular-bar copper on each positive Copper Foil of dc bus, the negative Copper Foil of each dc bus is provided with direct current negative pole rectangular-bar copper, direct current both positive and negative polarity input copper ring is respectively arranged on the positive and negative Copper Foil two ends of each dc bus, exchange output copper ring is on each phase output Copper Foil.This structure ensures the equal mobility of multiple parallel power metal-oxide-semiconductors, it is to avoid the failure of power MOS pipe or damage, it is ensured that the drive control performance of New energy automobile motor, has prevented potential safety hazard caused by equal mobility contrast.
Description
Technical field
The utility model is related to a kind of arrangement of metal-oxide-semiconductor in new-energy automobile power driver module.
Background technology
The motor of usual new-energy automobile is driven control by power driver module, and power driver module includes arrangement
In pcb board and the power MOS pipe of bridge arm and lower bridge arm on three-phase inverter is constituted, when upper bridge arm or the single power of lower bridge arm
The electric current or dissipated power of metal-oxide-semiconductor just need to connect multiple power MOS tube parallels when being unsatisfactory for design requirement, to improve its power
Performance.Power MOS pipe itself has positive temperature coefficient, can be played in parallel connection from the effect for flowing, generally less than 5 work(
It is easy when rate metal-oxide-semiconductor is in parallel that preferable mobility is realized in the case where particular topology and treatment is not taken, but work as and be more than 8
In the application in parallel of power MOS pipe, due to the high-power feature of automobile-used power driver module, common mode directly in parallel can not
Meet current sharing energy, be easily caused failure or the damage of power MOS pipe, influence the drive control of New energy automobile motor, there is one
Fixed potential safety hazard.
The content of the invention
Technical problem to be solved in the utility model is to provide metal-oxide-semiconductor in a kind of new-energy automobile power driver module
Arrangement, this structure ensures the equal mobility of multiple parallel power metal-oxide-semiconductors, it is to avoid the failure of power MOS pipe or damage, it is ensured that
The drive control performance of New energy automobile motor, has prevented potential safety hazard caused by equal mobility contrast.
In order to solve the above technical problems, in the utility model new-energy automobile power driver module metal-oxide-semiconductor arrangement
Including being provided with the pcb board of connector, A phases the multiple power MOS in parallel of bridge arm under bridge arm multiple power MOS pipe, A phases in parallel
Bridge arm is multiple simultaneously in the multiple power MOS pipes in parallel of bridge arm, C phases under bridge arm multiple power MOS pipe, B phases in parallel in pipe, B phases
The multiple power MOS pipes in parallel of bridge arm under the power MOS pipe and C phases of connection, and direct-flow positive pole rectangular-bar copper, direct current negative pole rectangle
Copper bar, direct-flow positive pole input copper ring, direct current negative pole are input into copper ring and exchange output copper ring；
The pcb board be from up to down sequentially provided with the negative Copper Foil of first group of positive Copper Foil of dc bus and dc bus, second group
The positive Copper Foil of dc bus and the negative Copper Foil of dc bus negative Copper Foil, the 3rd group of positive Copper Foil of dc bus and dc bus, described first
It is provided between the group positive Copper Foil of dc bus and the negative Copper Foil of dc bus and exchanges A phases and export Copper Foil, second group of dc bus is just
Alternating-current B being provided between Copper Foil and the negative Copper Foil of dc bus and mutually exporting Copper Foil, the 3rd group of positive Copper Foil of dc bus is female with direct current
Exchange C phases are provided between the negative Copper Foil of line export Copper Foil；
The multiple power MOS pipes in parallel of bridge arm are in a row located on the positive Copper Foil of first group of dc bus simultaneously in the A phases
And the drain electrode of each power MOS pipe connects the Copper Foil, the multiple power MOS pipes in parallel of bridge arm are in a row located at the friendship under the A phases
Stream A phases are exported on Copper Foil and the source electrode of each power MOS pipe connects the negative Copper Foil of first group of dc bus, bridge in the A phases
The drain electrode of the multiple power MOS pipes in parallel of bridge arm connects the friendship respectively under the source electrode and A phases of the multiple power MOS pipes in parallel of arm
Stream A phases export Copper Foil, the multiple power MOS pipes in parallel of bridge arm under the power MOS pipes and A phases of the multiple parallel connections of bridge arm in the A phases
Grid be connected to the connector through the pcb board fine rule；
The multiple power MOS pipes in parallel of bridge arm are in a row located on the positive Copper Foil of second group of dc bus simultaneously in the B phases
And the drain electrode of each power MOS pipe connects the Copper Foil, the multiple power MOS pipes in parallel of bridge arm are in a row located at the friendship under the B phases
Stream B phases are exported on Copper Foil and the source electrode of each power MOS pipe connects the negative Copper Foil of second group of dc bus, bridge in the B phases
The drain electrode of the multiple power MOS pipes in parallel of bridge arm connects the friendship respectively under the source electrode and B phases of the multiple power MOS pipes in parallel of arm
Stream B phases export Copper Foil, the multiple power MOS pipes in parallel of bridge arm under the power MOS pipes and B phases of the multiple parallel connections of bridge arm in the B phases
Grid be connected to the connector through the pcb board fine rule；
The multiple power MOS pipes in parallel of bridge arm are in a row located on the 3rd group of positive Copper Foil of dc bus simultaneously in the C phases
And the drain electrode of each power MOS pipe connects the Copper Foil, the multiple power MOS pipes in parallel of bridge arm are in a row located at the friendship under the C phases
Stream C phases are exported on Copper Foil and the source electrode of each power MOS pipe connects the negative Copper Foil of the 3rd group of dc bus, bridge in the C phases
The drain electrode of the multiple power MOS pipes in parallel of bridge arm connects the friendship respectively under the source electrode and C phases of the multiple power MOS pipes in parallel of arm
Stream C phases export Copper Foil, the multiple power MOS pipes in parallel of bridge arm under the power MOS pipes and C phases of the multiple parallel connections of bridge arm in the C phases
Grid be connected to the connector through the pcb board fine rule；
The direct-flow positive pole rectangular-bar copper is being respectively arranged on the positive Copper Foil of first group of dc bus, second group of dc bus just
Power MOS pipe top on Copper Foil and the 3rd group of positive Copper Foil of dc bus and on the Copper Foil, the direct current negative pole rectangle
Copper bar is respectively arranged on the negative Copper Foil of first group of dc bus, second group of negative Copper Foil of dc bus and the 3rd group of negative copper of dc bus
Be located on paper tinsel and respectively below the power MOS pipe that the exchange A phases are exported on Copper Foil, the power that alternating-current B is mutually exported on Copper Foil
Metal-oxide-semiconductor lower section and exchange below the power MOS pipe that C phases export on Copper Foil, the direct-flow positive pole is input into copper ring and direct current negative pole is defeated
Enter copper ring and be respectively arranged on the positive Copper Foil two ends of each group dc bus and the negative Copper Foil two ends of each group dc bus, the exchange output
Copper ring is respectively arranged on the exchange A phases and exports Copper Foil, alternating-current B and mutually export Copper Foil and exported on Copper Foil with C phases are exchanged.
Further, the multiple power MOS pipe packet layouts on the positive Copper Foil of each dc bus, adjacent sets power MOS pipe
Between be provided with connect the dc bus Copper Foil direct-flow positive pole input copper ring；Multiple power on each phase output Copper Foil
Metal-oxide-semiconductor packet layout, is provided between adjacent sets power MOS pipe and connects exchange output copper ring for mutually exporting Copper Foil.
Further, each power MOS pipe is the power MOS pipe of single-sided aluminum-base plate paster encapsulation.
Because the arrangement of metal-oxide-semiconductor in the utility model new-energy automobile power driver module employs above-mentioned technical side
Case, i.e. this structure set three groups of positive and negative Copper Foils of dc bus on pcb board and set AC three-phase output Copper Foil, direct current therebetween
Multiple power MOS pipes of each upper bridge arm are set on the positive Copper Foil of bus, each lower bridge arm is respectively provided with AC three-phase output Copper Foil
Multiple power MOS pipes, the electrode of each metal-oxide-semiconductor presses the connection of three-phase bridge type converter principle, multiple work(on each positive Copper Foil of dc bus
Rate metal-oxide-semiconductor top is provided with direct-flow positive pole rectangular-bar copper, and the negative Copper Foil of each dc bus is provided with direct current negative pole rectangular-bar copper, and direct current is just
Negative pole input copper ring is respectively arranged on the positive and negative Copper Foil two ends of each dc bus, and exchange output copper ring is on each phase output Copper Foil.This
Structure ensures the equal mobility of multiple parallel power metal-oxide-semiconductors, it is to avoid the failure of power MOS pipe or damage, it is ensured that new-energy automobile
The drive control performance of motor, has prevented potential safety hazard caused by equal mobility contrast.
Brief description of the drawings
The utility model is described in further detail with implementation method below in conjunction with the accompanying drawings：
Fig. 1 is the arrangement schematic diagram of metal-oxide-semiconductor in the utility model new-energy automobile power driver module.
Specific embodiment
Embodiment is as shown in figure 1, the arrangement of metal-oxide-semiconductor includes in the utility model new-energy automobile power driver module
It is provided with the multiple power in parallel of bridge arm under bridge arm in the pcb board 1 of connector 10, A phases multiple power MOS pipe 11, A phases in parallel
Bridge in the multiple power MOS pipes 22 in parallel of bridge arm, C phases under bridge arm multiple in parallel power MOS pipe 21, B phases in metal-oxide-semiconductor 12, B phases
The multiple power MOS pipes 32 in parallel of bridge arm under the multiple power MOS pipes 31 in parallel of arm and C phases, and direct-flow positive pole rectangular-bar copper
2nd, direct current negative pole rectangular-bar copper 3, direct-flow positive pole input copper ring 4, direct current negative pole are input into copper ring 5 and exchange output copper ring 6；
The pcb board is from up to down sequentially provided with the negative Copper Foil 14 of first group of positive Copper Foil 13 of dc bus and dc bus, the
Two groups of positive Copper Foils 23 of dc bus and the negative Copper Foil of dc bus negative Copper Foil 24, the 3rd group of positive Copper Foil 33 of dc bus and dc bus
34, it is provided between the negative Copper Foil 14 of the positive Copper Foil 13 of first group of dc bus and dc bus and exchanges A phases and export Copper Foil 15, it is described
Alternating-current B is provided between second group of positive Copper Foil 23 of dc bus and the negative Copper Foil 24 of dc bus mutually export Copper Foil 25, described 3rd group
It is provided between the negative Copper Foil 34 of the positive Copper Foil 33 of dc bus and dc bus and exchanges C phases and export Copper Foil 35；
The multiple power MOS pipes 11 in parallel of bridge arm are in a row located at the positive Copper Foil 13 of first group of dc bus in the A phases
Go up and the drain electrode of each power MOS pipe 11 connects the Copper Foil 13, the multiple power MOS pipes 12 in parallel of bridge arm are in a row under the A phases
Exported on Copper Foil 15 located at the exchange A phases and the source electrode of each power MOS pipe 12 connects the negative copper of first group of dc bus
Paper tinsel 14, the multiple power MOS pipes 12 in parallel of bridge arm under the source electrode and A phases of the multiple power MOS pipes 11 in parallel of bridge arm in the A phases
Drain electrode connect the exchange A phases respectively and export Copper Foil 15, in the A phases under bridge arm multiple power MOS pipes 11 and A phases in parallel
The grid of the multiple power MOS pipes 12 in parallel of bridge arm is connected to the connector 10 through the fine rule of the pcb board 1；
The multiple power MOS pipes 21 in parallel of bridge arm are in a row located at the positive Copper Foil 23 of second group of dc bus in the B phases
Go up and the drain electrode of each power MOS pipe 21 connects the Copper Foil 23, the multiple power MOS pipes 22 in parallel of bridge arm are in a row under the B phases
Mutually exported on Copper Foil 25 located at the alternating-current B and the source electrode of each power MOS pipe 22 connects the negative copper of second group of dc bus
Paper tinsel 24, the multiple power MOS pipes 22 in parallel of bridge arm under the source electrode and B phases of the multiple power MOS pipes 21 in parallel of bridge arm in the B phases
Drain electrode connect the alternating-current B respectively and mutually export Copper Foil 25, in the B phases under bridge arm multiple power MOS pipes 21 and B phases in parallel
The grid of the multiple power MOS pipes 22 in parallel of bridge arm is connected to the connector 10 through the fine rule of the pcb board 1；
The multiple power MOS pipes 31 in parallel of bridge arm are in a row located at the positive Copper Foil 33 of the 3rd group of dc bus in the C phases
Go up and the drain electrode of each power MOS pipe 31 connects the Copper Foil 33, the multiple power MOS pipes 32 in parallel of bridge arm are in a row under the C phases
Exported on Copper Foil 35 located at the exchange C phases and the source electrode of each power MOS pipe 32 connects the negative copper of the 3rd group of dc bus
Paper tinsel 34, the multiple power MOS pipes 32 in parallel of bridge arm under the source electrode and C phases of the multiple power MOS pipes 31 in parallel of bridge arm in the C phases
Drain electrode connect the exchange C phases respectively and export Copper Foil 35, in the C phases under bridge arm multiple power MOS pipes 31 and C phases in parallel
The grid of the multiple power MOS pipes 32 in parallel of bridge arm is connected to the connector 10 through the fine rule of the pcb board 1；
It is female that the direct-flow positive pole rectangular-bar copper 2 is respectively arranged on 13, second group of direct current of the positive Copper Foil of first group of dc bus
Power MOS pipe top on the positive Copper Foil 23 of line and the 3rd group of positive Copper Foil 33 of dc bus and on the Copper Foil, the direct current
Negative pole rectangular-bar copper 3 is respectively arranged on first group of dc bus negative Copper Foil 24 and the 3rd of 14, second group of dc bus of negative Copper Foil
It is located on the negative Copper Foil 34 of group dc bus and respectively the lower section of power MOS pipe 12, exchange that the exchange A phases are exported on Copper Foil 15
B phases export the lower section of power MOS pipe 22 on Copper Foil 25 and exchanges below the power MOS pipe 32 that C phases are exported on Copper Foil 35, it is described directly
Stream positive pole is input into copper ring 4 and direct current negative pole input copper ring 5 is respectively arranged on the positive Copper Foil two ends of each group dc bus and each group is straight
The negative Copper Foil two ends of stream bus, the exchange output copper ring 6 is respectively arranged on the exchange A phases and exports Copper Foil 15, alternating-current B and mutually exports copper
Paper tinsel 25 is exported on Copper Foil 35 with C phases are exchanged.
Preferably, the packet layout of multiple power MOS pipes 11,21,31 on the positive Copper Foil 13,23,33 of each dc bus,
The direct-flow positive pole input copper ring 4 for connecting the dc bus Copper Foil is provided between adjacent sets power MOS pipe；Each phase output copper
The packet layout of multiple power MOS pipes 12,22,32 on paper tinsel 15,25,35, connection is provided between adjacent sets power MOS pipe, and this is mutually defeated
Go out the exchange output copper ring 6 of Copper Foil.
Preferably, each power MOS pipe is the power MOS pipe of single-sided aluminum-base plate paster encapsulation.
In this structure on power driver module three-phase inverter bridge arm and lower bridge arm multiple power MOS pipes in parallel up to 12
Individual, each power MOS pipe is arranged at using single-sided aluminum-base plate mount technology and high-power output, work(is realized on the corresponding Copper Foil of pcb board
Rate conversion terminal is using multiple direct-flow positive pole input copper rings, direct current negative pole input copper ring and exchanges output copper ring uniform layout, directly
Stream power supply is input into copper ring, direct current negative pole and is input into by the direct-flow positive pole on the positive Copper Foil of dc bus and the negative Copper Foil of dc bus
Copper ring is input into, and three-phase drive electric current exports Copper Foil through exporting Copper Foil, alternating-current B and mutually exporting Copper Foil located at exchange A phases with C phases are exchanged
On exchange output copper ring output, improve the reliability of power terminal；Pcb board work(is welded on using rectangular-bar copper parallel connection simultaneously
On the Copper Foil of rate cabling, the low impedance characteristic of rectangular-bar copper reduces the cabling resistance difference of each power MOS pipe, reduces power
The parasitic parameter of cabling, rectangular-bar copper enhances the heat-conducting effect of power MOS pipe, reduces the stray inductance of power cabling, improves
The overcurrent capability of power MOS pipe and power cabling, reduces the voltage stress of power MOS pipe.This structure causes each power
The loop of power circuit track lengths of metal-oxide-semiconductor reach unanimity, so as to improve three-phase inverter upper and lower bridge arm multiple power MOS pipes in parallel
Equal mobility, it is ensured that the drive control performance of New energy automobile motor, prevented potential safety hazard caused by equal mobility contrast.
Claims (3)
1. in a kind of new-energy automobile power driver module metal-oxide-semiconductor arrangement, including be provided with the pcb board of connector, A phases
The multiple power in parallel of bridge arm in the multiple power MOS pipes in parallel of bridge arm, B phases under bridge arm multiple power MOS pipe, A phases in parallel
Bridge arm is more under the power MOS pipes and C phases of the multiple parallel connections of bridge arm in the multiple power MOS pipes in parallel of bridge arm, C phases under metal-oxide-semiconductor, B phases
Individual power MOS pipe in parallel, it is characterised in that：Also include direct-flow positive pole rectangular-bar copper, direct current negative pole rectangular-bar copper, direct-flow positive pole
Input copper ring, direct current negative pole are input into copper ring and exchange output copper ring；
The pcb board is from up to down sequentially provided with first group of positive Copper Foil of dc bus and dc bus negative Copper Foil, second group of direct current
The positive Copper Foil of bus and the negative Copper Foil of dc bus negative Copper Foil, the 3rd group of positive Copper Foil of dc bus and dc bus, described first group straight
It is provided between the stream positive Copper Foil of bus and the negative Copper Foil of dc bus and exchanges A phases and export Copper Foil, the positive Copper Foil of second group of dc bus
Alternating-current B being provided between the negative Copper Foil of dc bus and mutually exporting Copper Foil, the 3rd group of positive Copper Foil of dc bus is born with dc bus
Exchange C phases are provided between Copper Foil and export Copper Foil；
The multiple power MOS pipes in parallel of bridge arm are in a row on the positive Copper Foil of first group of dc bus and each in the A phases
The drain electrode of power MOS pipe connects the Copper Foil, and the multiple power MOS pipes in parallel of bridge arm are in a row located at the exchange A phases under the A phases
Export on Copper Foil and the source electrode of each power MOS pipe connects the negative Copper Foil of first group of dc bus, bridge arm is multiple in the A phases
The source electrode of power MOS pipe in parallel and the drain electrode of the multiple power MOS pipes in parallel of bridge arm under A phases connect described exchange A phases respectively
Output Copper Foil, in the A phases under the multiple in parallel power MOS pipes of bridge arm and A phases the multiple power MOS pipes in parallel of bridge arm grid
The connector is connected to through the pcb board fine rule；
The multiple power MOS pipes in parallel of bridge arm are in a row on the positive Copper Foil of second group of dc bus and each in the B phases
The drain electrode of power MOS pipe connects the Copper Foil, and the multiple power MOS pipes in parallel of bridge arm are in a row located at the alternating-current B phase under the B phases
Export on Copper Foil and the source electrode of each power MOS pipe connects the negative Copper Foil of second group of dc bus, bridge arm is multiple in the B phases
The drain electrode of the multiple power MOS pipes in parallel of bridge arm connects the alternating-current B phase respectively under the source electrode and B phases of power MOS pipe in parallel
Output Copper Foil, in the B phases under the multiple in parallel power MOS pipes of bridge arm and B phases the multiple power MOS pipes in parallel of bridge arm grid
The connector is connected to through the pcb board fine rule；
The multiple power MOS pipes in parallel of bridge arm are in a row on the 3rd group of positive Copper Foil of dc bus and each in the C phases
The drain electrode of power MOS pipe connects the Copper Foil, and the multiple power MOS pipes in parallel of bridge arm are in a row located at the exchange C phases under the C phases
Export on Copper Foil and the source electrode of each power MOS pipe connects the negative Copper Foil of the 3rd group of dc bus, bridge arm is multiple in the C phases
The source electrode of power MOS pipe in parallel and the drain electrode of the multiple power MOS pipes in parallel of bridge arm under C phases connect described exchange C phases respectively
Output Copper Foil, in the C phases under the multiple in parallel power MOS pipes of bridge arm and C phases the multiple power MOS pipes in parallel of bridge arm grid
The connector is connected to through the pcb board fine rule；
The direct-flow positive pole rectangular-bar copper is respectively arranged on the positive Copper Foil of first group of dc bus, second group of positive Copper Foil of dc bus
With the power MOS pipe top on the 3rd group of positive Copper Foil of dc bus and on the Copper Foil, the direct current negative pole rectangular-bar copper
It is respectively arranged on the negative Copper Foil of first group of dc bus, second group of negative Copper Foil of dc bus and the 3rd group of negative Copper Foil of dc bus
And be located at respectively below the power MOS pipe that the exchange A phases export on Copper Foil, the power MOS pipe that alternating-current B is mutually exported on Copper Foil
Lower section exports power MOS pipe lower section on Copper Foil, direct-flow positive pole input copper ring and direct current negative pole input copper ring with C phases are exchanged
It is respectively arranged on the positive Copper Foil two ends of each group dc bus and the negative Copper Foil two ends of each group dc bus, the exchange output copper ring point
Not She Yu the exchange A phases export Copper Foil, alternating-current B and mutually export Copper Foil and exported on Copper Foil with C phases are exchanged.
2. in new-energy automobile power driver module according to claim 1 metal-oxide-semiconductor arrangement, it is characterised in that：
Multiple power MOS pipe packet layouts on the positive Copper Foil of each dc bus, are provided with connection described between adjacent sets power MOS pipe
The direct-flow positive pole input copper ring of dc bus Copper Foil；Multiple power MOS pipe packet layouts on each phase output Copper Foil are adjacent
It is provided between group power MOS pipe and connects exchange output copper ring for mutually exporting Copper Foil.
3. in new-energy automobile power driver module according to claim 1 and 2 metal-oxide-semiconductor arrangement, its feature exists
In：Each power MOS pipe is the power MOS pipe of single-sided aluminum-base plate paster encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621456051.6U CN206294085U (en) | 2016-12-28 | 2016-12-28 | The arrangement of metal-oxide-semiconductor in new-energy automobile power driver module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621456051.6U CN206294085U (en) | 2016-12-28 | 2016-12-28 | The arrangement of metal-oxide-semiconductor in new-energy automobile power driver module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206294085U true CN206294085U (en) | 2017-06-30 |
Family
ID=59154226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621456051.6U Active CN206294085U (en) | 2016-12-28 | 2016-12-28 | The arrangement of metal-oxide-semiconductor in new-energy automobile power driver module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206294085U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108880271A (en) * | 2018-08-24 | 2018-11-23 | 广州致远电子有限公司 | A kind of push-pull converter circuit and its control method |
| CN108880272A (en) * | 2018-08-24 | 2018-11-23 | 广州致远电子有限公司 | A kind of push-pull converter circuit and its control method |
| CN108923662A (en) * | 2018-08-24 | 2018-11-30 | 广州致远电子有限公司 | A kind of push-pull converter circuit and its control method |
| CN109067164A (en) * | 2018-08-24 | 2018-12-21 | 广州致远电子有限公司 | A kind of push-pull converter circuit and its control method |
| CN110752192A (en) * | 2019-10-12 | 2020-02-04 | 安徽鸿创新能源动力有限公司 | Motor controller drive circuit structure |
| CN116669362A (en) * | 2023-07-25 | 2023-08-29 | 南京顿恩电气有限公司 | High-current motor driver with symmetrical layout and parallel current sharing |
-
2016
- 2016-12-28 CN CN201621456051.6U patent/CN206294085U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108880271A (en) * | 2018-08-24 | 2018-11-23 | 广州致远电子有限公司 | A kind of push-pull converter circuit and its control method |
| CN108880272A (en) * | 2018-08-24 | 2018-11-23 | 广州致远电子有限公司 | A kind of push-pull converter circuit and its control method |
| CN108923662A (en) * | 2018-08-24 | 2018-11-30 | 广州致远电子有限公司 | A kind of push-pull converter circuit and its control method |
| CN109067164A (en) * | 2018-08-24 | 2018-12-21 | 广州致远电子有限公司 | A kind of push-pull converter circuit and its control method |
| CN110752192A (en) * | 2019-10-12 | 2020-02-04 | 安徽鸿创新能源动力有限公司 | Motor controller drive circuit structure |
| CN116669362A (en) * | 2023-07-25 | 2023-08-29 | 南京顿恩电气有限公司 | High-current motor driver with symmetrical layout and parallel current sharing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206294085U (en) | The arrangement of metal-oxide-semiconductor in new-energy automobile power driver module | |
| CN105450042B (en) | Three level power converter and its power cell | |
| CN104038085B (en) | Three-level current transformer | |
| CN102163926B (en) | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules | |
| CN201623650U (en) | Inverter with modularized installation | |
| CN103546015B (en) | DC-to-AC converter | |
| CN207304393U (en) | Rectification and the auxiliary converter power cell and composite bus bar of inversion facilitation | |
| CN105429443B (en) | The converter device of current transformer with multiphase | |
| CN103078471A (en) | Power module and current converter | |
| CN204103780U (en) | Three level power converter and power cell thereof | |
| CN101860246A (en) | Inversion unit modularization structure device of photovoltaic inverter | |
| CN103354414A (en) | Parallel IGBT power unit | |
| CN103560682A (en) | Power driving system | |
| CN104734467A (en) | Power module with lifted stacked structures | |
| CN207098214U (en) | Suitable for the two-tube composite bus bars in parallel of IGBT | |
| JP2013042663A (en) | Three-phase power conversion apparatus | |
| CN103178721A (en) | High-capacity five-level converter power cabinet | |
| CN107294400A (en) | Traction converter plant based on high compatible power unit | |
| CN104467363B (en) | A kind of application method of large power supply power inverter | |
| CN102801348A (en) | Three-phase five-level inverter | |
| CN108768195A (en) | Power circuit, power module and current transformer | |
| CN107911033A (en) | Optimize the design method and locomotive unsteady flow power cell of main circuit totality stray inductance | |
| CN209515651U (en) | A kind of power module with power bus | |
| JP2014209812A (en) | Semiconductor element and wiring structure of power conversion device | |
| CN102412737A (en) | Insulated gate bipolar transistor (IGBT) module formed by double-parallel transistor units for wind power converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |