CN102163926B - High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules - Google Patents

Abstract

The invention belongs to the technical field of power electronics, and in particular relates to a high-power converter based on parallel connection of IGBT modules. The high-power converter metal film capacitor of the present invention adopts a high-power converter structure in which the polarity of the capacitor is positive and negative staggered arrangement, the circuit structure is symmetrical, the module current equalization effect is good, and the stray inductance of the loop is small. , to facilitate cascading between link modules to achieve high-power applications. It solves the problems that the capacity of a single IGBT module cannot meet the application of high-power converters, and the current sharing of parallel IGBT modules.

Description

High Power Converter Based on Parallel Connection of IGBT Modules

technical field

The invention belongs to the technical field of power electronics, and in particular relates to a high-power converter based on parallel connection of IGBT modules.

Background technique

IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. IGBT combines the advantages of the above two devices, the driving power is small and the saturation voltage is low, its frequency characteristics are between MOSFET and power transistor, and it can work normally in the frequency range of tens of kHz. Wider and wider applications, occupying a dominant position in high-frequency and medium-power applications.

The IGBT is a fully-controlled device. If a driving positive voltage is applied between the gate and the emitter of the IGBT, the MOSFET will be turned on, so that the collector and the base of the PNP transistor will be in a low resistance state to make the transistor turn on; If the voltage between the gate and the emitter of the IGBT is 0V or a negative voltage, the MOSFET is turned off, and the supply of the base current of the PNP transistor is cut off, so that the transistor is turned off. The IGBT is also a voltage-controlled device like the MOSFET. A driving voltage of more than ten V is applied between its gate and emitter, and only a leakage current of μA level flows, basically consuming no power.

IGBT has the characteristics of fast switching speed, low conduction voltage, low driving power, high operating frequency, and flexible control. Therefore, it has been more and more widely used in modern power electronics technology. At present, the high-voltage, high-current IGBT has been modularized, and its drive circuit has now produced an integrated IGBT-specific drive circuit, which has better performance, higher reliability, and smaller size, and will be used in large and medium power in the future. dominant in applications. However, in many application fields of high-voltage and high-power converters, the voltage level of the device is required to reach more than 10kV, and the current reaches several thousand A. For now, the voltage and current capacity of a single IGBT module is still limited, far from being able to Meet the needs of the development of power electronics application technology.

At present, with the increasing demand for high-power converters in the market, the parallel connection of IGBT modules has become a trend, mainly due to the advantages of higher current density, uniform thermal distribution, flexible layout and higher cost performance of IGBT parallel connection. . Two IGBT parallel connection methods are often used, that is, IGBT module parallel connection and bridge arm parallel connection. By combining low-power IGBT modules and high-power IGBT modules in parallel, equivalent modules with different rated currents can be obtained, and the connection methods for parallel connection are also very flexible and diverse. In addition, the heat concentration of the modules can be reduced by parallel connection, so that it can obtain a more uniform temperature gradient distribution and a lower average radiator temperature, which is beneficial to increase the number of thermal cycles. Therefore, the parallel connection of IGBT modules is one of the best solutions for the design and application of high-power converters. However, there are differences in static and dynamic performance parameters between parallel IGBT modules, which will inevitably cause unbalanced device current distribution, and in severe cases, device failure or even damage to the main circuit. Layout and other design to ensure device current sharing.

With the rapid development of modern power electronics technology and high-power semiconductor devices, the market demand for high-power converters is also increasing. At present, the capacity of high-power semiconductor devices is still limited, which limits the development of high-power converters. The parallel connection of IGBT modules has become a development trend and provides a new solution.

Based on the structure of high-power converters connected in parallel with IGBT modules, it can be designed that the left and right bridge arms of the H-bridge circuit are arranged on both sides of the DC capacitor, and in the middle are multiple groups of metal film capacitors installed in parallel. Bridge IGBT modules are connected. The characteristics of this scheme design are: the connection relationship is simple and clear, and the internal structure of the module is compact; but the stray inductance of the loop is large, the current sharing effect of the IGBT module is poor, and the output of the DC capacitor is unbalanced, so this scheme is rarely used.

Based on the structure of high-power converters connected in parallel with IGBT modules, most of the left and right bridge arms of the H-bridge circuit are arranged on the same side of the DC capacitor, and the DC capacitors are arranged with the same polarity—the polarity of the capacitor is positive and negative. The inductive composite laminated busbar is connected to the H-bridge IGBT module. The design features of this scheme are: the circuit structure is compact, the module current sharing effect is better, but the stray inductance of the loop is relatively large, and the turn-off peak voltage is relatively high.

Contents of the invention

The invention provides a structural design scheme of the converter, which has achieved good results in tests. It solves the problems that the capacity of a single IGBT module cannot meet the application of high-power converters, and the current sharing of parallel IGBT modules.

A high-power converter based on the parallel connection of IGBT modules of the present invention includes IGBT modules, DC capacitors, H-bridge circuits, drive circuits, discharge circuits, bypass circuits, unit controllers, AC and DC busbars, and liquid cooling radiators ,in:

The DC capacitor plays the role of voltage support and is used as the input voltage of the energy harvesting power supply; the DC capacitor is selected from multiple sets of metal film capacitors with long service life installed in parallel, and is arranged with different polarities. The bridge IGBT module is connected;

The function of the H-bridge circuit is to output the compensation voltage according to the instructions of the controller. In order to achieve high power output, the upper and lower bridge arms of the H-bridge circuit are connected in parallel with multiple IGBT modules; the two left and right bridge arms are arranged on one side of the DC capacitor, and the same batch of The IGBT modules in the same package are connected in parallel to ensure the consistency of the parameters of the parallel IGBT modules; the drive circuit is used to trigger the devices in the IGBT modules. The main and slave drive circuits of the module design, and in order to reduce the lead inductance, the drive circuit is directly installed on the IGBT module, and the IGBT module is installed on the liquid cooling radiator;

The function of the AC and DC busbar is to connect the DC capacitor and the H-bridge IGBT module. In order to reduce the stray inductance, it is set as a non-inductive composite laminated busbar, which is arranged directly above the DC capacitor and the IGBT module;

The liquid-cooled radiator plays the role of heat dissipation. It is two independent waterways, dissipating most of the heat generated during the opening and closing of the IGBT module through the waterway. In order to facilitate the cascade connection between the link modules, the liquid-cooled , The water outlet is designed on the same side of the radiator;

The function of the discharge circuit is to provide overvoltage protection for the DC capacitor, and to discharge the DC capacitor during emergency and normal exits; the discharge circuit includes a discharge IGBT module connected in series with a discharge resistor. When the DC bus voltage exceeds the set threshold, the discharge IGBT module is turned on. Discharge the DC capacitor through the discharge resistor, the discharge IGBT module is installed on the back of the liquid-cooled radiator, the discharge resistor is set under the liquid-cooled radiator, and the lead-out end of the non-inductive composite laminated busbar is connected to the liquid-cooled radiator;

The role of the bypass circuit is to provide protection for the chain link module of the entire high-power converter. When the chain link module is running normally, the H bridge circuit is put into operation, and the bypass circuit is out of operation; when a specific fault occurs inside the chain link module, The signal is reported to the main controller, and the main controller issues a command after judgment to block the H-bridge circuit. At the same time, the bypass circuit is opened, and the output current is transferred to the bypass part, so that the faulty chain link exits; the bypass element uses a single-pole mechanical switch, Placed under the liquid-cooled radiator, connected to the liquid-cooled radiator through the outlet of the AC output row, and the AC output row is also connected to the adjacent link module;

The unit controller is responsible for accepting and executing the commands issued by the main controller, uploading the internal state of the high-power converter to the main controller, and controlling, monitoring and protecting the high-power converter. The unit controller and drive circuit layout On the outside of the high-power converter.

Among them, the DC capacitor adopts the structure of different polarity arrangement: the DC capacitor adopts multiple groups of metal film capacitors with long service life installed in parallel, and adopts the opposite polarity arrangement - the polarity of the capacitor is positive and negative interlaced arrangement, through non-inductive composite stacking The layer busbar is connected to the H-bridge IGBT module; the H-bridge IGBT module uses multiple IGBT modules in parallel and is installed on a liquid-cooled radiator. The two left and right bridge arms of the H-bridge circuit are located on one side of the DC capacitor, and the H-bridge circuit’s The output is connected to the bypass circuit through the AC output row, and connected to the adjacent link modules respectively; the driving circuit and the absorbing capacitor are located above the IGBT, in order to reduce the lead inductance, the driving circuit is directly installed above the IGBT module; the liquid cooling radiator is located on the Below the IGBT; in order to facilitate the cascading between modules, the inlet and outlet of the liquid cooling radiator are designed on the same side of the liquid cooling radiator; the discharge IGBT module is arranged on the back of the liquid cooling radiator, and placed under the radiator Unit controller, energy harvesting power supply, discharge resistor and bypass circuit.

The beneficial effects of the present invention are:

In the high-power converter of the present invention, metal film capacitors are arranged with different polarities—a high-power converter structure in which the polarity of the capacitor is positive and negative staggered. Compared with other structural design schemes, this scheme has obvious advantages : The circuit structure is symmetrical, the module current sharing effect is good, and the stray inductance of the loop is small, which is convenient for cascading between link modules to realize high-power applications.

Description of drawings

The present invention will be further described below in conjunction with the accompanying drawings.

Fig. 1 is according to the topological structure diagram of current source converter of the present invention;

FIG. 2 is a topological structure diagram of a voltage source converter according to the present invention;

Fig. 3 is according to the cascaded H bridge multi-level topological diagram of the present invention;

Fig. 4 is according to the single chain link module layout diagram of the present invention (capacitor is in the middle);

Fig. 5 is according to the same polarity arrangement plane layout diagram of the capacitor of the present invention;

Fig. 6 is a structural diagram of a chain link module with capacitors arranged in the same polarity according to the present invention;

Fig. 7 is according to the plane layout diagram of capacitor heteropolar arrangement of the present invention;

Fig. 8 is a structural diagram of a chain link module with different polarity arrangement of capacitors according to the present invention;

Fig. 9 is a schematic diagram of the circuit principle of a single chain link module.

Detailed ways

Basic high-power converters can be divided into two types of topologies, current source and voltage source, according to the nature of the DC bus.

The high-power converter includes an AC-DC busbar 8, a liquid-cooled radiator 9, and an energy-taking power supply 1, a DC capacitor 2, an H-bridge circuit 3, a drive circuit 4, a discharge circuit 5, a bypass circuit 6 and a unit controller. 7, the liquid cooling radiator 9 is placed on the top of the frame, the AC and DC busbar 8 is located above the liquid cooling radiator 9, and the AC and DC busbar 8 and the liquid cooling radiator 9 are provided with The H-bridge circuit 3, the AC-DC busbar 8 connect the H-bridge circuit with the DC capacitor 2 placed on the side of the frame, the drive circuit 4 is located between the H-bridge circuit 3 and the AC-DC busbar 8, the energy-taking power supply 1, the discharge circuit 5. The bypass circuit 6 and the unit controller 7 are placed under the liquid cooling radiator 9 respectively.

The DC capacitor adopts the structure of heteropolar arrangement: that is, the DC capacitor adopts multiple groups of metal film capacitors with long service life installed in parallel, and adopts the heteropolar arrangement: that is, the polarity of the capacitor is positive and negative interlaced arrangement, through non-inductive composite stacking The layer busbar is connected to the H-bridge IGBT module; the H-bridge IGBT module uses multiple IGBT modules in parallel and is installed on a liquid-cooled radiator. The two left and right bridge arms of the H-bridge circuit are located on one side of the DC capacitor, and the H-bridge circuit’s The output is connected to the bypass circuit through the AC output row, and connected to the adjacent link modules respectively; the driving circuit and the absorbing capacitor are located above the IGBT, in order to reduce the lead inductance, the driving circuit is directly installed above the IGBT module; the liquid cooling radiator is located on the Below the IGBT; in order to facilitate the cascading between modules, the inlet and outlet of the liquid cooling radiator are designed on the same side of the liquid cooling radiator; the discharge IGBT module is arranged on the back of the liquid cooling radiator, and placed under the radiator Unit controller, energy harvesting power supply, discharge resistor and bypass circuit. As shown in Figure 9, each chain link module includes an H-bridge circuit 3, a DC capacitor 2, a discharge circuit 5, a bypass circuit 6, an energy-taking circuit 1, a unit controller 7 and a drive circuit 4, an H-bridge circuit, The DC capacitor C, the discharge circuit and the energy-taking power supply are connected in parallel with each other. The H-bridge circuit includes two bridge arms connected in parallel. The midpoint of the two bridge arms is used as the AC output end of the link, and a bypass is connected in parallel between the AC output ends. circuit, the energy-taking power supply provides the obtained control power to the unit controller and the drive circuit, the unit controller controls the H-bridge circuit, the DC capacitor C, the discharge circuit and the bypass circuit respectively, and the drive circuit controls the H-bridge circuit The IGBT module (that is, the IGBT device) and the module in the discharge circuit (that is, the IGBT device) are driven.

The H-bridge circuit 3 includes two bridge arms connected in parallel, each bridge arm is composed of upper and lower power electronic components (V1-V4) in series, and each power electronic component is composed of high-power IGBT devices and diodes according to the reverse current flow direction The upper end of the two bridge arms is connected to the positive pole of the DC capacitor C, the lower end of the two bridge arms is connected to the negative pole of the DC capacitor C, and the midpoint of the two bridge arms is used as the AC output end of the link. A bypass circuit is connected in parallel between the output ends and then connected end to end with the AC end of the adjacent link; the discharge circuit includes an IGBT device VT1, a discharge resistor R and a diode D1, the IGBT device is connected in series with the discharge resistor R, and the diode D1 is connected to the discharge resistor in parallel.

The basic topology of the current source converter is shown in Figure 1. The development of the current source topology mainly experienced the capacitor-assisted current source inverter (CACSI), the pulse width modulation current source inverter (PWMCSI), and the thyristor. Pulse width modulated current source inverter (PWMCSI-SGCT). The topology of CACSI is composed of thyristor rectifier, DC large inductor, thyristor inverter and output filter capacitor. Since this topology does not use PWM technology and requires a very large output filter capacitor, the application of this topology has become less and less. The PWMCSI topology is characterized by an SCR rectifier, a DC link inductor, a GTO inverter and an output filter inductor. Due to the application of GTO, PWM control becomes possible, which enhances the speed regulation performance and greatly reduces the size of the inverter. The PWMCSI-SGCT topology is characterized by one SCR rectifier or one SGCT pulse width modulation rectifier, one smaller DC link capacitor, one SGCT inverter and one smaller output filter capacitor.

A typical voltage source converter is two-level, and its basic topology is shown in Figure 2, which consists of a pre-stage rectifier, a large DC capacitor and an inverter. A typical three-level inverter topology is composed of a 12-pulse or 24-pulse diode uncontrolled rectifier bridge, a DC bus capacitor and a three-level IGBT inverter. The cascaded H-bridge multi-level topology is also a multi-level topology that is widely used at present. As shown in Figure 3, it is formed by cascading multiple H-bridge circuits with the same structure, so as to obtain the required medium and high voltage applications. .

At present, the capacity of high-power semiconductor devices is still limited, which limits the development of high-power converters. The parallel connection of IGBT modules has become a development trend and provides a new solution. Based on the structure of high-power converters connected in parallel with IGBT modules, an H-bridge circuit can be used to arrange on both sides of the DC capacitor, as shown in Figure 4. In the middle are multiple groups of metal film capacitors installed in parallel, which are connected to the H-bridge IGBT module through a non-inductive composite laminated busbar. The two bridge arms are located on both sides of the film capacitor, and the driving board and the absorption circuit are located directly above the IGBT. Liquid cooling and heat dissipation The radiator is located under the IGBT, and the unit controller, energy harvesting circuit, discharge circuit, bypass circuit, etc. are placed under the radiator. The AC output row can be connected to the adjacent chain link module, the power part is on the inside, and the control part is on the outside. However, the stray inductance of the loop is large, the current sharing effect of the IGBT module is poor, and the output of the DC capacitor is unbalanced. This solution is rarely used.

Based on the structure of high-power converters connected in parallel with IGBT modules, most H-bridge circuits are arranged on the same side of the DC capacitors, and the DC capacitors are arranged with the same polarity. The schematic diagram is shown in Figure 5, and the structural layout is shown in Figure 6 As shown, the symbol C in the figure represents the collector, and E represents the emitter. Multiple groups of metal film capacitors installed in parallel are arranged on one side with the same polarity. They are connected to the H-bridge IGBT module through a non-inductive composite laminated busbar. The H-bridge IGBT module uses multiple IGBT modules in parallel, and the H-bridge is about two The bridge arm is located on one side of the capacitor; the driver board and absorbing capacitor are located above the IGBT, the liquid cooling radiator is located below the IGBT, and the water inlet and outlet are on the side of the radiator; the unit controller, energy harvesting power supply, and discharge circuit are placed under the radiator , bypass circuit, etc. The design features of this scheme are: the circuit structure is compact, the module current sharing effect is better, but the stray inductance of the loop is relatively large, and the turn-off peak voltage is relatively high.

In the high-power converter based on the parallel connection of IGBT modules of the present invention, metal film capacitors are arranged with different polarities, and its planar layout schematic diagram is shown in Figure 7; it belongs to the cascaded H-bridge multi-level voltage source converter, and its single H The bridge link module is composed of IGBT pulse width modulation rectifier, DC capacitor, IGBT inverter, discharge circuit, bypass circuit, etc. The structure diagram of the link module is shown in Figure 8.

The DC capacitor acts as a voltage support and serves as the input voltage of the energy harvesting power supply. The DC capacitors are multiple sets of metal film capacitors installed in parallel with long service life, arranged in opposite polarities, and connected to the H-bridge IGBT module through the positive and negative busbars.

The function of the AC and DC busbar is to connect the DC capacitor and the H-bridge IGBT module. In order to reduce the stray inductance, it is set as a non-inductive composite laminated busbar, which is arranged directly above the DC capacitor and the IGBT module, and is drawn out through the busbar. Connect the discharge IGBT to the discharge resistor. In order to reduce the stray inductance of the loop, the positive and negative busbars and the AC busbars are designed as composite laminated busbars, and the positive and negative busbars and the AC busbars are insulated with an insulating film. Since the thickness of the insulating film is thin, it can reduce the The distance between the positive and negative busbars is small, so the stray inductance of the busbars in the laminated structure is very small. At the same time, in the structural design of the laminated busbar, the current flow of the positive pole and the negative pole are opposite, and the magnetic fields formed in this way can cancel each other out, so as to eliminate the mutual inductance of the overlapping parts of the positive and negative busbars and reduce the stray inductance of the entire circuit.

The H-bridge circuit is the core circuit of the chain link module, which outputs the compensation voltage according to the instructions of the controller. In order to achieve high power output, the upper and lower bridge arms of the H-bridge circuit are connected in parallel with multiple IGBT modules; the two left and right bridge arms are arranged on one side of the DC capacitor, and the output of the H-bridge circuit is connected to the bypass circuit through the AC output bank, and respectively Connects to adjacent link modules. Since the difference in static and dynamic performance between parallel IGBTs will affect the current sharing of the tubes, to ensure the consistency of the parameters of the parallel IGBT modules, it is necessary to select modules of the same batch and the same package for parallel connection. The driver board is used to trigger the IGBT device. In order to achieve the same turn-on and turn-off characteristics of parallel IGBTs, the master and slave driver boards specially designed for large-capacity IGBT modules are selected. In order to reduce the lead inductance, the driver board is directly installed on the IGBT module. The IGBT modules are mounted on a liquid-cooled heat sink.

The liquid-cooled radiator can be selected as a water-cooled radiator, which is two independent waterways, and dissipates most of the heat generated during the opening and closing of the IGBT module through the waterway. The water inlet and outlet are designed on the same side of the radiator.

The discharge circuit is mainly used to provide overvoltage protection for the DC bus capacitor, and to discharge the DC capacitor during emergency and normal exit; the circuit is mainly composed of a discharge IGBT device VT1 connected in series with a discharge resistor R. When the DC bus voltage exceeds the set threshold, the discharge IGBT conductor On, discharge the DC bus capacitor through the discharge resistor. The discharge IGBT module is installed on the back of the liquid-cooled radiator, and the discharge resistor is placed under the liquid-cooled radiator and connected to it through the lead-out end of the non-inductive composite laminated busbar.

The bypass circuit provides protection for the entire chain link module. When the chain link module is running normally, the H bridge circuit is put into operation, and the bypass circuit is out of operation; when a specific fault occurs inside the chain link module, the signal is reported to the main controller, and the main control After judging, the device issues a command to block the H-bridge circuit, and at the same time, the bypass circuit is opened, and the output current is transferred to the bypass part to realize the function of exiting the faulty link. The bypass element is a mechanical switch, which is placed under the liquid-cooled radiator and connected to it through the outlet of the AC row, and the AC output row is also connected to the adjacent link modules.

The unit controller is responsible for accepting and executing the commands issued by the main controller. A single-chip microcomputer can be used to upload the internal status of the power module to the main controller to control, monitor and protect the power module. The unit controller and drive control board are arranged on the outside. The design features of this scheme are: the connection relationship is simple and clear, the module layout is symmetrical, the current sharing effect is good, the stray inductance of the loop is small, and it is convenient for cascading between link modules.

The invention has been described herein in terms of specific exemplary embodiments. Appropriate substitutions or modifications will be apparent to those skilled in the art without departing from the scope of the present invention. The exemplary embodiments are illustrative only, and not limiting of the scope of the invention, which is defined by the appended claims.

Claims (2)

1. the high-power converter based on the parallel connection of IGBT module, is characterized in that, comprises IGBT module, direct current capacitor, H bridge circuit, drive circuit, discharge circuit, bypass circuit, cell controller, alternating current-direct current busbar and liquid cooling heat radiator, wherein:

Direct current capacitor plays voltage support effect, and as the input voltage of getting energy power supply; Direct current capacitor is selected the metal film capacitor of the many groups of long service life that are installed in parallel, and adopts heteropolarity to arrange, by noninductive composite laminate busbar, is connected with H bridge IGBT module;

The effect of H bridge circuit is according to controller instruction output bucking voltage, and for realizing high-power output, in H bridge circuit, upper and lower bridge arm adopts many IGBT modules in parallel; Two left and right brachium pontis are arranged in a side of direct current capacitor, select same batch, the IGBT module of same packing to carry out parallel connection, thereby guarantee the consistency of parallel IGBT module parameter; Drive circuit is for triggering the device of IGBT module, for make parallel IGBT module to turn on and off characteristic consistent, select is the master and slave drive circuit of large capacity IGBT modular design specially, and in order to reduce lead-in inductance, drive circuit is directly installed in IGBT module, and described IGBT module is arranged on liquid cooling heat radiator;

The effect of alternating current-direct current busbar is that direct current capacitor and H bridge IGBT module are coupled together, and in order to reduce stray inductance, is set to noninductive composite laminate busbar, be arranged in direct current capacitor and IGBT module directly over;

Liquid cooling heat radiator plays thermolysis, for two-way water route independently, IGBT module is turned on and off to the most of heat producing in process and by water route, shed, for ease of the cascade of chain link intermodule, the entery and delivery port of liquid cooling heat radiator designs on the same side of radiator;

The effect of discharge circuit is for direct current capacitor provides overvoltage protection, is direct current capacitor electric discharge while promptly and normally exiting; Discharge circuit comprises that discharge IGBT module connects with discharge resistance, after DC bus-bar voltage surpasses the threshold value of adjusting, the conducting of discharge IGBT module, by discharge resistance, to DC capacitor, discharge, discharge IGBT module is arranged on the back side of liquid cooling heat radiator, discharge resistance is arranged on the below of liquid cooling heat radiator, by noninductive composite laminate busbar exit, is connected with liquid cooling heat radiator;

The effect of bypass circuit is that the chain link module for whole high-power converter provides protection, and when chain link module is normally moved, H bridge circuit is devoted oneself to work, and bypass circuit is out of service; When chain link inside modules generation specific fault, signal reporting is to master controller, and master controller is given an order through judgement, blocks H bridge circuit, and bypass circuit is open-minded simultaneously, and output current is transferred to bypass segment, thereby fault chain link is exited; Bypass elements is selected one pole mechanical switch, is placed on the below of liquid cooling heat radiator, exports row's exit be connected with liquid cooling heat radiator by interchange, exchanges output row and is also connected with adjacent link module;

Cell controller is responsible for accepting and carrying out the order that master controller issues; the state of high-power converter inside is uploaded to master controller; high-power converter is controlled, monitored and protects, and cell controller and drive circuitry arrangement are in the outside of high-power converter.

2. high-power converter as claimed in claim 1, is characterized in that: the output of H bridge circuit is exported row by interchange and is connected with bypass circuit, and is connected with adjacent link unit respectively; Drive circuit and Absorption Capacitance are positioned at the top of IGBT; Radiator below placement unit controller and get can power supply.