CN102163926B - High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules - Google Patents
High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules Download PDFInfo
- Publication number
- CN102163926B CN102163926B CN201010624224.1A CN201010624224A CN102163926B CN 102163926 B CN102163926 B CN 102163926B CN 201010624224 A CN201010624224 A CN 201010624224A CN 102163926 B CN102163926 B CN 102163926B
- Authority
- CN
- China
- Prior art keywords
- igbt module
- igbt
- circuit
- direct current
- power converter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 72
- 230000000694 effects Effects 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims description 41
- 239000007788 liquid Substances 0.000 claims description 41
- 238000013461 design Methods 0.000 claims description 17
- 239000002131 composite material Substances 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 238000001149 thermolysis Methods 0.000 claims description 2
- 238000011161 development Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 210000001367 artery Anatomy 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Inverter Devices (AREA)
Abstract
The invention particularly relates to a high-power converter based on parallel IGBT (insulated gate bipolar transistor) modules, belonging to the technical field of power electronic. Metal-film capacitors of the high-power converter adopt the high-power converter structure of a heteropolarity manner; and the polarities of the capacitors are staggered with each other. The high-power converter is featured with symmetrical circuit structure, good module current equalizing effect and low loop stray inductance so that the high-power converter is convenient for cascading chain joint modules so as to realize large power application. According to the invention, the problems that the capacity of the single IGBT module cannot meet the requirements of the high-power converter, and the current equalization of the parallel IGBT modules are solved.
Description
Technical field
The invention belongs to electric and electronic technical field, be specifically related to a kind of high-power converter based on the parallel connection of IGBT module.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, the compound full-control type voltage driven type power semiconductor being comprised of BJT (double pole triode) and MOS (insulating gate type field effect tube), has the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspects of GTR concurrently.GTR saturation pressure reduces, and current carrying density is large, but drive current is larger; MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, little and the saturation pressure of driving power reduces, its frequency characteristic is between MOSFET and power transistor, can normally work in tens kHz frequency ranges, in modern power electronics technology, obtain application more and more widely, in the big or middle power application of upper frequency, occupied leading position.
IGBT is full-control type device, if add driving positive voltage between the grid of IGBT and emitter, MOSFET conducting, becomes low resistive state and make transistor turns between the transistorized collector electrode of PNP and base stage like this; If voltage is 0V or negative voltage between the grid of IGBT and emitter, MOSFET cut-off, cuts off the supply of PNP transistor base current, makes transistor cut-off.IGBT is the same with MOSFET is also voltage-controlled device, applies the driving voltage of tens V between its grid-emitter, only has the leakage current of μ A level to flow through, substantially consumed power not.
It is fast that IGBT has switching speed, and conduction voltage drop is low, and driving power is little, and operating frequency is high, controls the features such as flexible, therefore, obtained application more and more widely in modern power electronics technology.At present, the IGBT of high voltage, large electric current is modularization, and its drive circuit has now produced the special-purpose drive circuit of integrated IGBT, and its performance is better, and reliability is higher, and volume is less, can be in the application of big or middle power from now on dominate.But in many applications of high voltage, high-power converter, more than the electric pressure of requirement device reaches 10kV, electric current reaches several thousand A, for now, the voltage and current capacity of single IGBT module is still limited, can not meet the demand of power electronics application technology development far away.
At present, along with growing with each passing day to the demand of high-power converter in market, IGBT module scheme in parallel has become a kind of trend, and this mainly comes from that IGBT parallel connection can provide more high current density, evenly heat distribution, flexible topology and compared with advantages such as high performance-price ratios.Often can adopt two kinds of IGBT parallel waies, i.e. IGBT module parallel connection and brachium pontis are in parallel.By small-power IGBT module, high-power IGBT module are carried out to parallel combination, can obtain the equivalent modules of different rated current, and it is also very flexible, various to realize connected mode in parallel.In addition, by parallel connection, can reduce module heat and concentrate, make it obtain temperature gradient distribution more uniformly, lower average radiator temperature, this is of value to raising thermal cycle cycle.Therefore, the parallel connection of IGBT module is one of preferred plan of high-power converter design application.Yet, between parallel IGBT module, static state exists difference with dynamic performance parameter, will certainly cause that device current distribution is unbalanced, when serious, can make component failure even damage main circuit, for this reason, the parallel connection of IGBT module how to consider by optimization drive, the design such as module placement guarantees device current-sharing.
Along with developing rapidly of modern power electronics technology and large power semiconductor device, market also increases day by day to the demand of high-power converter.At present, the capacity of large power semiconductor device is still limited, has limited the development of high-power converter, and IGBT module scheme in parallel has become a kind of development trend, and a kind of brand-new solution is provided.
High-power converter structure based on the parallel connection of IGBT module, can be designed as the both sides that H bridge circuit left and right brachium pontis is arranged in direct current capacitor, middle for the many groups of metal film capacitors that are installed in parallel, and by noninductive composite laminate busbar, is connected with H bridge IGBT module.The feature of this conceptual design is: annexation is simply clear, inside modules compact conformation; But loop stray inductance is large, IGBT module current-sharing weak effect, direct current capacitor is exerted oneself unbalanced, and this kind of scheme application is less.
High-power converter structure based on the parallel connection of IGBT module, great majority adopt H bridge circuit left and right brachium pontis to be arranged in the homonymy of direct current capacitor, and it is positive and negative being arranged in parallel that direct current capacitor adopts the polarity of same polarity layout-capacitor, by noninductive composite laminate busbar, is connected with H bridge IGBT module.The feature of this conceptual design is: circuit structure is compact, and module current-sharing effect is better, but loop stray inductance is larger, turn-offs peak voltage higher.
Summary of the invention
The invention provides a kind of converter structure design, obtained in test good effect.Solve single IGBT module capacity and can not meet the application of high-power converter, and the problems such as current-sharing that exist of parallel IGBT module.
A kind of high-power converter based on the parallel connection of IGBT module of the present invention, comprises IGBT module, direct current capacitor, H bridge circuit, drive circuit, discharge circuit, bypass circuit, cell controller, alternating current-direct current busbar and liquid cooling heat radiator, wherein:
Direct current capacitor plays voltage support effect, and as the input voltage of getting energy power supply; Direct current capacitor is selected the metal film capacitor of the many groups of long service life that are installed in parallel, and adopts heteropolarity to arrange, by noninductive composite laminate busbar, is connected with H bridge IGBT module;
The effect of H bridge circuit is according to controller instruction output bucking voltage, and for realizing high-power output, in H bridge circuit, upper and lower bridge arm adopts many IGBT modules in parallel; Two left and right brachium pontis are arranged in a side of direct current capacitor, select same batch, the IGBT module of same packing to carry out parallel connection, thereby guarantee the consistency of parallel IGBT module parameter; Drive circuit is for triggering the device of IGBT module, for make parallel IGBT module to turn on and off characteristic consistent, select is the master and slave drive circuit of large capacity IGBT modular design specially, and in order to reduce lead-in inductance, drive circuit is directly installed in IGBT module, and described IGBT module is arranged on liquid cooling heat radiator;
The effect of alternating current-direct current busbar is that direct current capacitor and H bridge IGBT module are coupled together, and in order to reduce stray inductance, is set to noninductive composite laminate busbar, be arranged in direct current capacitor and IGBT module directly over;
Liquid cooling heat radiator plays thermolysis, for two-way water route independently, IGBT module is turned on and off to the most of heat producing in process and by water route, shed, for ease of the cascade of chain link intermodule, the entery and delivery port of liquid cooling heat radiator designs on the same side of radiator;
The effect of discharge circuit is for direct current capacitor provides overvoltage protection, is direct current capacitor electric discharge while promptly and normally exiting; Discharge circuit comprises that discharge IGBT module connects with discharge resistance, after DC bus-bar voltage surpasses the threshold value of adjusting, the conducting of discharge IGBT module, by discharge resistance, to DC capacitor, discharge, discharge IGBT module is arranged on the back side of liquid cooling heat radiator, discharge resistance is arranged on the below of liquid cooling heat radiator, by noninductive composite laminate busbar exit, is connected with liquid cooling heat radiator;
The effect of bypass circuit is that the chain link module for whole high-power converter provides protection, and when chain link module is normally moved, H bridge circuit is devoted oneself to work, and bypass circuit is out of service; When chain link inside modules generation specific fault, signal reporting is to master controller, and master controller is given an order through judgement, blocks H bridge circuit, and bypass circuit is open-minded simultaneously, and output current is transferred to bypass segment, thereby fault chain link is exited; Bypass elements is selected one pole mechanical switch, is placed on the below of liquid cooling heat radiator, exports row's exit be connected with liquid cooling heat radiator by interchange, exchanges output row and is also connected with adjacent link module;
Cell controller is responsible for accepting and carrying out the order that master controller issues; the state of high-power converter inside is uploaded to master controller; high-power converter is controlled, monitored and protects, and cell controller and drive circuitry arrangement are in the outside of high-power converter.
Wherein, the structure that direct current capacitor adopts heteropolarity to arrange: direct current capacitor adopts the metal film capacitor of the many groups of long service life that are installed in parallel, and adopting the polarity of heteropolarity layout-capacitor is positive and negative interlaced arrangement, by noninductive composite laminate busbar, is connected with H bridge IGBT module; H bridge IGBT module adopts many IGBT modules in parallel, and be arranged on liquid cooling heat radiator, two left and right brachium pontis of H bridge circuit are positioned at a side of direct current capacitor, and the output of H bridge circuit is exported row by interchange and is connected with bypass circuit, and is connected with adjacent link module respectively; Drive circuit and Absorption Capacitance are positioned at the top of IGBT, and for reducing lead-in inductance, drive circuit is directly installed on IGBT module top; Liquid cooling heat radiator is positioned at the below of IGBT; For convenience of the cascade between module, the entery and delivery port Position Design of liquid cooling heat radiator is on the same side of liquid cooling heat radiator; Discharge IGBT module arrangement is at the back side of liquid cooling heat radiator, and radiator below placement unit controller, getting can power supply, discharge resistance and bypass circuit.
The invention has the beneficial effects as follows:
High-power converter of the present invention, metal film capacitor adopts the high-power converter structure that the polarity of heteropolarity layout-capacitor is positive and negative interlaced arrangement, compare with other structural design scheme, this scheme has obvious advantage: circuit structure is symmetrical, module current-sharing is effective, loop stray inductance is little, is convenient between chain link module cascade to realize high-power applications.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is according to current source converter topology diagram of the present invention;
Fig. 2 is according to voltage source converter topology diagram of the present invention;
Fig. 3 is according to many level of Cascade H bridge topological diagram of the present invention;
Fig. 4 is according to single chain link module placement figure of the present invention (capacitor is in centre);
Fig. 5 is according to capacitor same polarity plane of arrangement layout of the present invention;
Fig. 6 arranges chain link modular structure figure according to capacitor same polarity of the present invention;
Fig. 7 is according to capacitor heteropolarity plane of arrangement layout of the present invention;
Fig. 8 arranges chain link modular structure figure according to capacitor heteropolarity of the present invention;
Fig. 9 is the circuit theory schematic diagram of single chain link module.
Embodiment
Basic high-power converter can be divided into current source and the large class topological structure of voltage source two by DC bus character.
This high-power converter comprises alternating current-direct current busbar 8, liquid cooling heat radiator 9 and can power supply 1 by getting, direct current capacitor 2, H bridge circuit 3, drive circuit 4, discharge circuit 5, each chain link module that bypass circuit 6 and cell controller 7 form, described liquid cooling heat radiator 9 is placed in the top of framework, alternating current-direct current busbar 8 is positioned at the top of liquid cooling heat radiator 9, between alternating current-direct current busbar 8 and liquid cooling heat radiator 9, be provided with H bridge circuit 3, alternating current-direct current busbar 8 is connected H bridge circuit with the direct current capacitor 2 that is placed in framework side, drive circuit 4 is between H bridge circuit 3 and alternating current-direct current busbar 8, get energy power supply 1, discharge circuit 5, bypass circuit 6 and cell controller 7 are placed in respectively the below of liquid cooling heat radiator 9.
The structure that direct current capacitor adopts heteropolarity to arrange: direct current capacitor adopts the metal film capacitor of the many groups of long service life that are installed in parallel, and adopt heteropolarity to arrange: the polarity of capacitor is positive and negative interlaced arrangement, by noninductive composite laminate busbar, is connected with H bridge IGBT module; H bridge IGBT module adopts many IGBT modules in parallel, and be arranged on liquid cooling heat radiator, two left and right brachium pontis of H bridge circuit are positioned at a side of direct current capacitor, and the output of H bridge circuit is exported row by interchange and is connected with bypass circuit, and is connected with adjacent link module respectively; Drive circuit and Absorption Capacitance are positioned at the top of IGBT, and for reducing lead-in inductance, drive circuit is directly installed on IGBT module top; Liquid cooling heat radiator is positioned at the below of IGBT; For convenience of the cascade between module, the entery and delivery port Position Design of liquid cooling heat radiator is on the same side of liquid cooling heat radiator; Discharge IGBT module arrangement is at the back side of liquid cooling heat radiator, and radiator below placement unit controller, getting can power supply, discharge resistance and bypass circuit.As shown in Figure 9, described each chain link module comprises H bridge circuit 3, direct current capacitor 2, discharge circuit 5, bypass circuit 6, get energy circuit 1, cell controller 7 and drive circuit 4, H bridge circuit, direct current capacitor C, discharge circuit and get can power supply parallel with one another, H bridge circuit comprises two brachium pontis parallel with one another, the mid point of two brachium pontis is as the ac output end of this chain link, between ac output end, be parallel with a bypass circuit, get and can power supply resulting control power supply be offered to cell controller and drive circuit, cell controller is respectively to H bridge circuit, direct current capacitor C, discharge circuit and bypass circuit are controlled, drive circuit drives the module (being IGBT device) in the IGBT module in H bridge circuit (being IGBT device) and discharge circuit.
H bridge circuit 3 comprises two brachium pontis that are in parallel, each brachium pontis is in series by upper and lower two power electronic elements (V1～V4), each power electronic element is flowed to and is formed in parallel by counter current by high-power IGBT device and diode, the upper end of described two brachium pontis is connected with the positive pole of direct current capacitor C, two brachium pontis lower ends are connected with the negative pole of direct current capacitor C, the mid point of two brachium pontis, as the ac output end of this chain link, exchanges end head and the tail with adjacent link again after a bypass circuit in parallel between ac output end and is connected; Discharge circuit comprises IGBT device VT1, discharge resistance R and diode D1, and IGBT device and discharge resistance R are in series, and described diode D1 and discharge resistance are in parallel.
As shown in Figure 1, the pulse width modulation electrical current source inventer (PWMCSI-SGCT) that capacitor auxiliary current source inventer (CACSI), pulse width modulation electrical current source inventer (PWMCSI), thyristor form has mainly been experienced in the development of current source topological structure to the Basic Topological of current source converter.This topology of CACSI is comprised of silicon controlled rectifier, the large inductance of direct current, thyristor inverter and output filter capacitor.Because this topology is not used PWM technology, and need a very large output filter capacitor, the application of this topology is fewer and feweri.The feature of this topology of PWMCSI is by 1 SCR rectifier, 1 direct-current chain inductance, and 1 GTO inverter and 1 output inductor form.Due to application GTO, PWM controls becomes possibility, has strengthened speed adjusting performance, has also greatly reduced the size of inverter.The feature of this topology of PWMCSI-SGCT is by 1 SCR rectifier or 1 SGCT pulse width modulation rectifier, 1 less direct-current chain electric capacity, and 1 SGCT inverter and 1 less output filter capacitor form.
Typical voltage source converter is two level, and as shown in Figure 2, by 1 prime rectifier, 1 large DC capacitor and 1 inverter form its Basic Topological.Typical three-level inverter topology is not control rectifier bridge by the diode of 1 12 arteries and veins or 24 arteries and veins, and 1 dc-link capacitance and 1 three level IGBT inverter form.Many level of Cascade H bridge topology is also a kind of many level topologys of current extensive use, and as shown in Figure 3, it is to be formed by the cascade of the identical H bridge circuit of a plurality of structures, thereby obtains the mesohigh application needing.
At present, the capacity of large power semiconductor device is still limited, has limited the development of high-power converter, and IGBT module scheme in parallel has become a kind of development trend, and a kind of brand-new solution is provided.High-power converter structure based on the parallel connection of IGBT module, can adopt H bridge circuit arrangement in the both sides of direct current capacitor, as shown in Figure 4.Middle is the many groups of metal film electric capacity that are installed in parallel, by noninductive composite laminate busbar, be connected with H bridge IGBT module, two brachium pontis lay respectively at membrane capacitance both sides, drive plate, absorbing circuit are positioned at directly over IGBT, liquid cooling heat radiator is positioned at IGBT below, and radiator below placement unit controller, getting can circuit, discharge circuit, bypass circuit etc.Exchanging output row can be connected with adjacent link module, and strong power part is in inner side, and control section is in outside.But loop stray inductance is large, IGBT module current-sharing weak effect, direct current capacitor is exerted oneself unbalanced, and this kind of scheme application is less.
High-power converter structure based on the parallel connection of IGBT module, great majority adopt H bridge circuit arrangement at the homonymy of direct current capacitor, and direct current capacitor is that same polarity is arranged, its floor map as shown in Figure 5, as shown in Figure 6, the symbol C in figure represents collector electrode to topology layout figure, and E represents emitter.The many groups of metal film capacitors that are installed in parallel are in a side, and arrange for same polarity, by noninductive composite laminate busbar, are connected with H bridge IGBT module, and H bridge IGBT module adopts many IGBT modules parallel connections, and two left and right brachium pontis of H bridge are positioned at a side of capacitor; Drive plate, Absorption Capacitance are positioned at IGBT top, and liquid cooling heat radiator is positioned at IGBT below, and entery and delivery port is in a side of radiator; Radiator below placement unit controller, getting can power supply, discharge circuit, bypass circuit etc.The feature of this conceptual design is: circuit structure is compact, and module current-sharing effect is better, but loop stray inductance is larger, turn-offs peak voltage higher.
High-power converter based on the parallel connection of IGBT module of the present invention, metal film capacitor adopts heteropolarity to arrange, and its plane figure schematic diagram is as shown in Figure 7; Belong to Cascade H bridge voltage with multiple levels source current transformer, its single H bridge chain section module is comprised of IGBT pulse width modulation rectifier, direct current capacitor and IGBT inverter, discharge circuit, bypass circuit etc., and chain link modular structure figure as shown in Figure 8.
Direct current capacitor plays voltage support effect, and as the input voltage of getting energy power supply.Direct current capacitor is selected the metal film capacitor of the many groups of long service life that are installed in parallel, and adopts heteropolarity to arrange, by both positive and negative polarity busbar, is connected with H bridge IGBT module.
The effect of alternating current-direct current busbar is that direct current capacitor and H bridge IGBT module are coupled together, in order to reduce stray inductance, be set to noninductive composite laminate busbar, be arranged in direct current capacitor and IGBT module directly over, and by busbar exit, discharge IGBT and discharge resistance are coupled together.In order to reduce the stray inductance in loop, both positive and negative polarity busbar and alternating current bus bar are designed to composite laminate busbar, adopt insulation film that both positive and negative polarity busbar and alternating current bus bar are carried out to insulation processing, due to insulation film thin thickness, can reduce the distance between positive and negative busbar, so the busbar stray inductance of laminated construction is very little.Meanwhile, in the structural design of stack bus bar, the flow direction of the electric current of positive pole and negative pole is contrary, and can cancel out each other in the magnetic field forming like this, reach the mutual inductance of eliminating both positive and negative polarity busbar lap, reduces the stray inductance in whole loop.
H bridge circuit is the core circuit of chain link module, according to controller instruction output bucking voltage.In order to realize high-power output, in H bridge circuit, upper and lower bridge arm adopts many IGBT modules in parallel; Two left and right brachium pontis are arranged in a side of direct current capacitor, and the output of H bridge circuit is exported row by interchange and is connected with bypass circuit, and is connected with adjacent link module respectively.Due to static between parallel IGBT, can affect pipe current-sharing with the difference of dynamic property, therefore, guarantee the consistency of parallel IGBT module parameter, need select same batch, the module of same packing to carry out parallel connection.Drive plate is used for triggering IGBT device, opens, turn-off characteristic is consistent for realizing parallel IGBT, and selecting is specially the master and slave drive plate of large capacity IGBT modular design, and in order to reduce lead-in inductance, drive plate is directly installed in IGBT module.IGBT module is arranged on liquid cooling heat radiator.
Liquid cooling heat radiator is optional with water-filled radiator, for two-way water route independently, IGBT module is turned on and off to the most of heat producing in process and by water route, shed, for ease of the cascade of chain link intermodule, the entery and delivery port of liquid cooling heat radiator designs on the same side of radiator.
Discharge circuit is mainly used in as dc-link capacitance provides overvoltage protection, DC capacitor electric discharge while promptly and normally exiting; Main circuit is in series by discharge IGBT device VT1 and discharge resistance R, and after DC bus-bar voltage surpasses the threshold value of adjusting, discharge IGBT conducting, discharges to dc-link capacitance by discharge resistance.Discharge IGBT module is arranged on the back side of liquid cooling heat radiator, and discharge resistance is placed on the below of liquid cooling heat radiator, coupled by noninductive composite laminate busbar exit.
Bypass circuit provides protection for whole chain link module, and when chain link module is normally moved, H bridge circuit is devoted oneself to work, and bypass circuit is out of service; When chain link inside modules generation specific fault, signal reporting is to master controller, and master controller is given an order through judgement, blocks H bridge circuit, and bypass circuit is open-minded simultaneously, and output current is transferred to bypass segment, realizes fault chain link exit function.Bypass elements is selected mechanical switch, is placed on the below of liquid cooling heat radiator, arranges exit coupled by interchange, exchanges output row and is also connected with adjacent link module respectively.
Cell controller is responsible for accepting and carrying out the order that master controller issues, and can adopt single-chip microcomputer, and the state of its power model inside is uploaded to master controller, and power model is controlled, monitored and protects.Cell controller and driving control board are arranged in outside.The feature of this conceptual design is: annexation is simple, clear, and module placement is symmetrical, and current-sharing is effective, and loop stray inductance is little, is convenient to cascade between chain link module.
According to specific exemplary embodiment, invention has been described herein.It will be apparent under not departing from the scope of the present invention, carrying out to one skilled in the art suitable replacement or revise.Exemplary embodiment is only illustrative, rather than the restriction to scope of the present invention, and scope of the present invention is defined by appended claim.
Claims (2)
1. the high-power converter based on the parallel connection of IGBT module, is characterized in that, comprises IGBT module, direct current capacitor, H bridge circuit, drive circuit, discharge circuit, bypass circuit, cell controller, alternating current-direct current busbar and liquid cooling heat radiator, wherein:
Direct current capacitor plays voltage support effect, and as the input voltage of getting energy power supply; Direct current capacitor is selected the metal film capacitor of the many groups of long service life that are installed in parallel, and adopts heteropolarity to arrange, by noninductive composite laminate busbar, is connected with H bridge IGBT module;
The effect of H bridge circuit is according to controller instruction output bucking voltage, and for realizing high-power output, in H bridge circuit, upper and lower bridge arm adopts many IGBT modules in parallel; Two left and right brachium pontis are arranged in a side of direct current capacitor, select same batch, the IGBT module of same packing to carry out parallel connection, thereby guarantee the consistency of parallel IGBT module parameter; Drive circuit is for triggering the device of IGBT module, for make parallel IGBT module to turn on and off characteristic consistent, select is the master and slave drive circuit of large capacity IGBT modular design specially, and in order to reduce lead-in inductance, drive circuit is directly installed in IGBT module, and described IGBT module is arranged on liquid cooling heat radiator;
The effect of alternating current-direct current busbar is that direct current capacitor and H bridge IGBT module are coupled together, and in order to reduce stray inductance, is set to noninductive composite laminate busbar, be arranged in direct current capacitor and IGBT module directly over;
Liquid cooling heat radiator plays thermolysis, for two-way water route independently, IGBT module is turned on and off to the most of heat producing in process and by water route, shed, for ease of the cascade of chain link intermodule, the entery and delivery port of liquid cooling heat radiator designs on the same side of radiator;
The effect of discharge circuit is for direct current capacitor provides overvoltage protection, is direct current capacitor electric discharge while promptly and normally exiting; Discharge circuit comprises that discharge IGBT module connects with discharge resistance, after DC bus-bar voltage surpasses the threshold value of adjusting, the conducting of discharge IGBT module, by discharge resistance, to DC capacitor, discharge, discharge IGBT module is arranged on the back side of liquid cooling heat radiator, discharge resistance is arranged on the below of liquid cooling heat radiator, by noninductive composite laminate busbar exit, is connected with liquid cooling heat radiator;
The effect of bypass circuit is that the chain link module for whole high-power converter provides protection, and when chain link module is normally moved, H bridge circuit is devoted oneself to work, and bypass circuit is out of service; When chain link inside modules generation specific fault, signal reporting is to master controller, and master controller is given an order through judgement, blocks H bridge circuit, and bypass circuit is open-minded simultaneously, and output current is transferred to bypass segment, thereby fault chain link is exited; Bypass elements is selected one pole mechanical switch, is placed on the below of liquid cooling heat radiator, exports row's exit be connected with liquid cooling heat radiator by interchange, exchanges output row and is also connected with adjacent link module;
Cell controller is responsible for accepting and carrying out the order that master controller issues; the state of high-power converter inside is uploaded to master controller; high-power converter is controlled, monitored and protects, and cell controller and drive circuitry arrangement are in the outside of high-power converter.
2. high-power converter as claimed in claim 1, is characterized in that: the output of H bridge circuit is exported row by interchange and is connected with bypass circuit, and is connected with adjacent link unit respectively; Drive circuit and Absorption Capacitance are positioned at the top of IGBT; Radiator below placement unit controller and get can power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010624224.1A CN102163926B (en) | 2010-12-31 | 2010-12-31 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010624224.1A CN102163926B (en) | 2010-12-31 | 2010-12-31 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102163926A CN102163926A (en) | 2011-08-24 |
| CN102163926B true CN102163926B (en) | 2014-08-27 |
Family
ID=44464948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010624224.1A Expired - Fee Related CN102163926B (en) | 2010-12-31 | 2010-12-31 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102163926B (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412703A (en) * | 2011-11-18 | 2012-04-11 | 广东明阳龙源电力电子有限公司 | Flow equalizing device for current transformer of wind-driven generator |
| CN103138542B (en) * | 2011-11-30 | 2016-08-10 | 永济新时速电机电器有限责任公司 | Four-quadrant chopped power assembly and converter cabinet |
| CN103138601B (en) * | 2011-11-30 | 2015-06-03 | 永济新时速电机电器有限责任公司 | Four-quadrant power component and conversion cabinet |
| CN103107724A (en) * | 2013-01-29 | 2013-05-15 | 上海电气集团股份有限公司 | Modularized structure of three-level converter |
| CN103381122B (en) * | 2013-06-27 | 2016-05-25 | 浙江联宜电机股份有限公司 | The adjusting drive circuit of a kind of wheel-chair seat and backrest |
| CN103326366A (en) * | 2013-06-28 | 2013-09-25 | 中国西电电气股份有限公司 | Three-single-phase-three-wire-system parallel APF/SVG device |
| CN104426403B (en) * | 2013-09-09 | 2017-05-17 | 南京南瑞继保电气有限公司 | Module unit suitable for high-capacity modularized multi-level voltage source converter |
| CN103633820B (en) * | 2013-11-28 | 2017-01-18 | 电子科技大学 | IGBT (insulated gate bipolar transistor) parallel current sharing circuit |
| CN104701096B (en) * | 2014-12-29 | 2018-03-16 | 国家电网公司 | A kind of dc circuit breaker bridge-type module |
| CN106712479B (en) * | 2015-11-12 | 2019-03-05 | 维谛技术有限公司 | A kind of power module configuration method, device and converter equipment |
| CN106301005A (en) * | 2016-08-26 | 2017-01-04 | 思源清能电气电子有限公司 | The high-power chain link module of SVG based on blocking framework |
| CN106849828B (en) * | 2017-03-27 | 2019-01-25 | 北京精密机电控制设备研究所 | A kind of MOSFET parallel current-equalizing circuit based on fault diagnosis |
| CN109067200A (en) * | 2018-10-11 | 2018-12-21 | 西安埃克森电源有限公司 | A kind of DC master row design device |
| DE102019008177A1 (en) * | 2018-11-30 | 2020-06-04 | Teco-Westinghouse Motor Company | HIGH-FREQUENCY MEDIUM VOLTAGE DRIVE SYSTEM FOR HIGH-SPEED MACHINE APPLICATIONS |
| CN110971137A (en) * | 2019-12-18 | 2020-04-07 | 阳光电源股份有限公司 | Inversion module |
| CN112490003B (en) * | 2020-12-04 | 2022-03-25 | 中车永济电机有限公司 | Simplified support capacitor assembly suitable for electric locomotive converter |
| CN113015417B (en) * | 2021-03-12 | 2022-12-20 | 长城超云(北京)科技有限公司 | Novel liquid cooling modularization frame power |
| CN215601212U (en) * | 2021-06-11 | 2022-01-21 | 精进电动科技股份有限公司 | Double-module parallel motor controller driving structure and motor controller |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002078104A (en) * | 2000-08-24 | 2002-03-15 | Nippon Yusoki Co Ltd | Freighter control device |
| CN1400731A (en) * | 2001-08-07 | 2003-03-05 | 任少康 | Waveform generation method and power converter device |
| CN201467005U (en) * | 2009-03-16 | 2010-05-12 | 北京能高自动化技术有限公司 | Parallel-connected high-power half-bridge PEBB based on IGBT |
| CN101741227A (en) * | 2010-02-08 | 2010-06-16 | 浙江大学 | Water-cooled three-phase diode-clamped three-level inverted power module |
| CN101877530A (en) * | 2010-03-11 | 2010-11-03 | 荣信电力电子股份有限公司 | Fully-controlled converter injection enhanced gate transistor (IEGT)-based high-capacity H bridge power unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100843434B1 (en) * | 2006-09-22 | 2008-07-03 | 삼성전기주식회사 | Multilayer Chip Capacitor |
-
2010
- 2010-12-31 CN CN201010624224.1A patent/CN102163926B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002078104A (en) * | 2000-08-24 | 2002-03-15 | Nippon Yusoki Co Ltd | Freighter control device |
| CN1400731A (en) * | 2001-08-07 | 2003-03-05 | 任少康 | Waveform generation method and power converter device |
| CN201467005U (en) * | 2009-03-16 | 2010-05-12 | 北京能高自动化技术有限公司 | Parallel-connected high-power half-bridge PEBB based on IGBT |
| CN101741227A (en) * | 2010-02-08 | 2010-06-16 | 浙江大学 | Water-cooled three-phase diode-clamped three-level inverted power module |
| CN101877530A (en) * | 2010-03-11 | 2010-11-03 | 荣信电力电子股份有限公司 | Fully-controlled converter injection enhanced gate transistor (IEGT)-based high-capacity H bridge power unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102163926A (en) | 2011-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102163926B (en) | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules | |
| CN201956885U (en) | Insulated gate bipolar transistor (IGBT) module paralleling-based high-power current transformer | |
| CN201623650U (en) | Inverter with modularized installation | |
| CN103401434B (en) | A kind of power unit of large-power current transformer | |
| CN202856629U (en) | Locomotive converter | |
| CN104201866B (en) | Insulated gate bipolar transistor three-level power cabinet | |
| CN102957326A (en) | Modularized structure for three-level inverter for wind power generation | |
| AU2021317217B2 (en) | Power assembly of three-level inverter, three-level inverter, and wind turbine | |
| CN104201867A (en) | Three-level IGBT power cabinet based on heat pipe radiator | |
| CN101860246A (en) | Inversion unit modularization structure device of photovoltaic inverter | |
| CN203339972U (en) | Sliding-rail type IGBT water-cooling power module | |
| CN103326552B (en) | The current balance system of super high power IGBT induction heating equipment and full-bridge inverting unit | |
| CN201682403U (en) | Modularized structure device of inverter unit in photovoltaic inverter | |
| CN104767388B (en) | A kind of ozonizer power supply | |
| CN201726303U (en) | High-power high-voltage inverter power unit | |
| CN103107724A (en) | Modularized structure of three-level converter | |
| CN100466428C (en) | Medium power low voltage frequency converter based on insulation grating bipolar transistor | |
| CN101944836B (en) | High-power converting module | |
| CN103166478B (en) | A kind of high-tension integral gate change transistor five level power cabinet | |
| CN107911033B (en) | Design method for optimizing total stray inductance of main circuit and locomotive variable-current power unit | |
| CN203104253U (en) | Modularized structure for three-electric level current transformer | |
| CN202949366U (en) | Modular structure of three-level converter for wind power generation | |
| Wen et al. | Design of a high-power power electronics building block based on SiC MOSFET modules | |
| CN207765963U (en) | A kind of three level low-pressure reactive compensation power modules | |
| CN204046444U (en) | A kind of three level IGBT converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140827 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |