CN101877530A - Fully-controlled converter injection enhanced gate transistor (IEGT)-based high-capacity H bridge power unit - Google Patents
Fully-controlled converter injection enhanced gate transistor (IEGT)-based high-capacity H bridge power unit Download PDFInfo
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Abstract
The invention relates to a fully-controlled converter injection enhanced gate transistor (IEGT)-based high-capacity H bridge power unit in electric and electronic industries. The power unit takes an H bridge power unit consisting of IEGT phase modules as a main body and can output adjustable-amplitude and adjustable-frequency alternating current voltage or output adjustable-amplitude direct current voltage. One phase module comprises two IEGT apparatuses which are connected in series with each other, and a middle coupling end is led out as an output end; and each phase module also comprises a buffer absorption circuit and a direct current filter capacitor which is connected between a positive bus and a negative bus. Compared with the prior art, the power unit has the advantage that: by adopting the fully-controlled converted IEGT in design, the power unit has excellent modularized structural design, can realize high-capacity power output, has super high generality and perfect protection and can greatly improve the stability and reliability of a serial H bridge structural product formed by the power unit.
Description
Technical field
The present invention relates in the power electronics industry power cell based on the full-control type current device.
Background technology
Along with market to the demand of big capacity converter more and more widely, the continuous lifting of power electronic device technology, the IEGT switching device has the latency development prospect as MOS series power electronic device, have characteristics such as low-loss, high speed motion, high withstand voltage, active grid driving intellectuality, thereby and adopt groove structure and the multicore sheet characteristic that has from current-sharing in parallel, make the IEGT switching device have much potentiality aspect the current capacity further enlarging.
H bridge series connection topological structure based on IGBT is widely used in the high-power frequency conversion field, but limit by voltage, the levels of current of switching device tolerance, and the capacity of each power cell is less.H bridge power unit based on high-power switch device IEGT can overcome this restriction, thereby making that H bridge series transformer is easier reaches higher power level, therefore, the IEGT power cell is opened in research, realize that by the IEGT power unit module high-capacity power output is very important, and IEGT power unit module packaged type also can provide numerous derivatives, uses in big or middle capacity converter.
Summary of the invention
The purpose of this invention is to provide a kind of high-capacity H bridge power unit based on fully-controlled converter injection enhanced gate transistor (IEGT), this power cell adopts fully-controlled converter injection enhanced gate transistor (IEGT), can realize big capacity output, have superpower versatility, can improve the stability and the reliability of the cascaded H bridge infrastructure product of its composition greatly.
For achieving the above object, the present invention is achieved through the following technical solutions:
A kind of high-capacity H bridge power unit based on fully-controlled converter injection enhanced gate transistor (IEGT), H bridge power unit, the alternating voltage of output amplitude and frequency adjustable or output amplitude adjustable DC voltage that this power cell is formed based on the IEGT phase module.
Described H bridge power unit is made up of two bridge modules that phase module is formed or includes four IEGT devices that include two IEGT devices.
A described phase module comprises two IEGT devices, and two IEGT devices are cascaded, and middle link leads to output; Each phase module comprises that also buffering absorbs circuit and dc filter capacitor, and dc filter capacitor is connected between the positive and negative bus.
Described buffering absorbs circuit and comprises inductance, resistance, diode and electric capacity, and the diode cathode end links to each other with inductance, and the diode cathode end links to each other with resistance, and resistance links to each other with inductance; The negative pole end of diode also connects electric capacity, and the electric capacity other end is connected with negative busbar.
Described each IEGT device all is parallel with fly-wheel diode, and fly-wheel diode can be internal or external two kinds of forms.
Described power cell also comprises the crowbar module, and the two ends of crowbar module are connected on the positive and negative dc bus.
Described crowbar module comprises two kinds of electric current crowbar module and voltage crowbar modules, and electric current crowbar module is composed in series by bidirectional thyristor and resistance; Voltage crowbar module by thyristor and diode inverse parallel after, be in series with resistance.
Described power cell also comprises bypass module, and bypass module is connected in parallel on H bridge power unit output.
Described bypass module is composed in parallel by thyristor SCR1 and SCR2, the bypass contactor KM of voltage sensor VS, two reverse parallel connections, is parallel to the output of two phase modules.
Described power cell also comprises the copped wave module, and the copped wave module is connected between the positive and negative bus.
Described copped wave module is in series by full-controlled switch device and brake resistance, full-controlled switch device and brake resistance respectively reverse parallel connection fly-wheel diode.
Described power cell also comprises two voltage sensors, and one of them voltage sensor two ends is connected on the positive and negative dc bus, is used for the direct voltage of detection power unit; Another voltage sensor is connected the outlet side of H bridge power unit, is used to detect output voltage.
Described power cell also comprises a current sensor, is connected on the dc bus, is used to detect the electric current that flows through on the dc bus.
Described IEGT switching device can singlely use, and also can be one group of IEGT switching device that a plurality of IEBT switching device serial or parallel connections are formed.
Described IEGT switching device also can be PP IGBT, IGCT or other full-controlled switch device.
Described H bridge power unit can be applicable to high voltage converter, high voltage static reacance generator, rolling stock traction convertor, wind-force generating converter, HVDC Light field.
Compared with prior art, the invention has the beneficial effects as follows:
The design of this power cell; adopt fully-controlled converter injection enhanced gate transistor (IEGT), have excellent modular construction design, can realize high-capacity power output; have superpower versatility and perfect protection, can improve the stability and the reliability of the cascaded H bridge infrastructure product of its composition greatly.
Description of drawings
Fig. 1 is an IEGT phase module electrical structure schematic diagram;
Fig. 2 is not for controlling rectification module electrical structure schematic diagram;
Fig. 3 is a half control rectification module electrical structure schematic diagram;
Fig. 4 is a full-controlled rectifier module electrical structure schematic diagram;
Fig. 5 is a copped wave module electrical structure schematic diagram;
Fig. 6-1 is an electric current crowbar module electrical structure schematic diagram;
Fig. 6-2 is a voltage crowbar module electrical structure schematic diagram;
Fig. 7 is a bypass module electrical structure schematic diagram;
Fig. 8 is the electrical structure schematic diagram that is used for chain type STATCOM power cell;
Fig. 9 is the electrical structure schematic diagram that is used for the power cell of two quadrant high voltage converters;
Figure 10 is the electrical structure schematic diagram that is used for the power cell of four-quadrant high voltage converter;
Figure 11 is the electrical structure schematic diagram of the chain type STATCOM of dihedral connection;
Figure 12 is the electrical structure schematic diagram of the cascaded H bridge high voltage converter of star connection.
Embodiment
Be described in detail the present invention below by embodiment.
See Fig. 8, be used for the IEGT high-capacity H bridge power unit of chain type STATCOM, form by 1# phase module, crowbar module, 2# phase module, bypass module, voltage sensor.The 1# phase module comprises two identical full-controlled switch device IEGT1, IEGT2, IEGT1 sustained diode 1 in parallel, IEGT2 sustained diode 2 in parallel.Two IEGT devices are cascaded, and middle link leads to output; Each phase module also comprises dc filter capacitor, and dc filter capacitor is connected between the positive and negative bus; Phase module comprises that also buffering absorbs circuit, and buffering absorbs circuit and is connected across between dc filter capacitor C3 and switching device IEGT1, the IEGT2, and forms in parallel with dc filter capacitor C3, two switching device IEGT1, IEGT2 respectively.
Buffering absorbs circuit and is made of inductance L 1, resistance R 1, diode D5, capacitor C 1, and diode D5 positive terminal links to each other with inductance L 1, and diode D5 negative pole end links to each other with resistance R 1, and resistance R 1 links to each other with inductance L 1; The negative pole end of diode D5 also connects capacitor C 1, and capacitor C 1 other end is connected with negative busbar.
The crowbar module comprises two kinds of electric current crowbar module and voltage crowbar modules, sees Fig. 6-1, and electric current crowbar module is composed in series by bidirectional thyristor BJT and resistance R 4, and what select for use in the present embodiment is the electric current crowbar.Electric current crowbar module can detect the shoot through that takes place in two different phase modules simultaneously by 1 current sensor.When electric current reaches the protection setting threshold, electric current crowbar protection action, resistance R 4 bypass short circuit currents disperse the short circuit energy, reach the effect of protection IEGT.See Fig. 6-2, voltage crowbar module by thyristor SCR3 and diode D24 inverse parallel after, be in series with resistance R 5.Voltage crowbar module detects the direct current overvoltage by the voltage sensor of dc bus.When voltage reaches protection during setting threshold, voltage crowbar protection action, thus dc-link capacitance releases energy by the voltage crowbar and reduces busbar voltage, makes IEGT that overvoltage can not take place and damages.
The 2# phase module comprises two identical full-controlled switch device IEGT3, IEGT4, IEGT3 sustained diode 3 in parallel, IEGT4 sustained diode 4 in parallel.Two IEGT devices are cascaded, and middle link leads to output; Each phase module also comprises dc filter capacitor C4, and the dc filter capacitor place is connected between the positive and negative bus; Phase module comprises that also buffering absorbs circuit, and buffering absorbs circuit and is connected across between dc filter capacitor C4 and switching device IEGT3, the IEGT4, and forms in parallel with dc filter capacitor C4, two switching device IEGT3, IEGT4 respectively.
Buffering absorbs circuit and is made of inductance L 2, resistance R 2, diode D6, capacitor C 2, and diode D6 positive terminal links to each other with inductance L 2, and diode D6 negative pole end links to each other with resistance R 2, and resistance R 2 links to each other with inductance L 2; The negative pole end of diode D6 also connects capacitor C 2, and capacitor C 2 other ends are connected with negative busbar.
Bypass module is composed in parallel by two antiparallel thyristor SCR1, SCR2, bypass contactor KM, is parallel to the output of two phase modules.
This power cell comprises voltage sensor VS1 and voltage sensor VS, and voltage sensor VS1 is arranged at the rectification module outlet side, and its two ends are connected on the positive and negative dc bus, is used for the middle dc voltage of detection power unit; Voltage sensor VS is arranged at the inversion outlet side of H bridge power unit, is used to detect inverter output voltage.
Embodiment 2
See Fig. 9, be used for the IEGT high-capacity H bridge power unit of two quadrant high voltage converters, form by rectification module, copped wave module, 1# phase module, crowbar module, 2# phase module, bypass module, voltage sensor.
In the present embodiment, rectification module adopts half control rectifier bridge structure (Fig. 3), and rectification module also can adopt does not control rectifier bridge (Fig. 2) or full-controlled rectifier bridge construction (Fig. 4).
See Fig. 3, Fig. 9, the half control rectifier bridge constitutes three-phase commutation bridge by three thyristor SCR1, SCR2, SCR3 and three diode D13, D14, D15.
See Fig. 2, do not control rectifier bridge and constitute three-phase commutation bridge by six diode D7, D8, D9, D10, D11, D12.
See Fig. 4, the full-controlled rectifier bridge constitutes the three phase rectifier bridge construction by six full-control type device IEGT5, IEGT6, IEGT7, IEGT8, IEGT9, IEGT10, and the equal fly-wheel diode in parallel of each full-control type device IEGT5.Full-control type device IEGT5, IEGT6, IEGT7, IEGT8, IEGT9, IEGT10 be sustained diode 16 in parallel, D17, D18, D19, D20, D21 respectively.
See Fig. 5, Fig. 9, the copped wave module is in series by full-controlled switch device IEGT11 and brake resistance R3, and full-controlled switch device IEGT11 is connected with diode D22, diode D23 inverse parallel respectively with brake resistance R3.
1# phase module, crowbar module, 2# phase module, bypass module, voltage sensor are with embodiment 1.
Embodiment 3
See Figure 10, be used for the IEGT high-capacity H bridge power unit of four-quadrant high voltage converter, form by rectification module, 1# phase module, crowbar module, 2# phase module, bypass module, voltage sensor.
See Fig. 4, Figure 10, present embodiment adopts the full-controlled rectifier module, constitute the three phase rectifier bridge construction by six full-control type device IEGT5, IEGT6, IEGT7, IEGT8, IEGT9, IEGT10, and each full-control type device IEGT5 all is parallel with fly-wheel diode.Full-control type device IEGT5, IEGT6, IEGT7, IEGT8, IEGT9, IEGT10 are parallel with sustained diode 16, D17, D18, D19, D20, D21 respectively.
1# phase module, crowbar module, 2# phase module, bypass module, voltage sensor are with embodiment 1.
In the foregoing description, the clamp type buffering of selecting for use absorbs circuit and can effectively suppress peak voltage and electric current, promptly effectively stop high dv/dt and di/dt, extenuate the electric stress that device bears greatly in circuit, reduce the switching loss of device, the second breakdown of avoiding device and inhibition electromagnetic interference, thereby improve the reliability of circuit.The buffering of described phase module absorbs circuit also can absorb circuit for the buffering of other types, as C, and RC, RCD, McMurry etc.
Described rectification module can be for not controlling rectifier bridge, half control rectifier bridge or full-controlled rectifier bridge.The half control rectifier bridge here comprises 3 thyristors and 3 diodes.Do not control rectifier bridge and form, can realize the most basic rectification function by 6 diodes.The main effect of half control rectifier bridge has two, and one is can be by the control to trigger angle, to the quick and stable charging process of dc filter capacitor, has solved the problem that the electric capacity charging is shoved effectively after the realization system powers on; Another is to need cutting unit when input under normal or failure condition, can need not circuit breaker, fuse and by to the triggering control of thyristor and the power supply of cutting unit input apace.Described half control rectifier bridge can also can be used full control device (IEGT etc.) with half control device (thyristor).And the function of full-controlled rectifier bridge can realize the two-way flow of active power, make described power cell except active power of output normally, can also when the energy reverse flow,, keep the stable of DC bus-bar voltage simultaneously to mains side feedback active power.
Described copped wave module is made up of full control switching device and brake resistance, action by switching device, the adjusting of discharging of DC bus-bar voltage that can be controlled, thereby the problem that the power cell DC bus-bar voltage that causes when solving the energy feedback effectively raises to higher.This copped wave module can repeat work.
Described crowbar module has two kinds, and a kind of is electric current crowbar module, and another kind is a voltage crowbar module.Electric current crowbar module and voltage crowbar module all are the switching devices that is used for protecting in the phase module, can use simultaneously, also can select for use by real needs.
Described bypass module is designed to comprise the composite bypass of thyristor and bypass contactor, bypass trouble unit fast when guaranteeing fault, thereby guarantee whole system do not shut down operation.The bypass handoff functionality guarantees automatically unit bypass and system to be need not to shut down when there is fault the unit; handling failure unit again after the conditions permit to be produced; the unit composite bypass design that comprises thyristor and bypass contactor has improved the ability of system's fast processing fault especially, thereby has improved reliability of system operation.
Described phase module, rectification module, copped wave module, the crowbar module is the submodule that is connected on the dc bus, by modular design, each module all uses same or analogous connector to be connected on the dc bus, is convenient to the structural design of installation and maintenance thereby realization is compact.
Described rectification module, the copped wave module, the crowbar module, bypass module can be accepted or rejected by the actual needs of system.The inversion unit of being made up of two phase modules can be applied to chain type STATCOM, needs to increase crowbar module and bypass module etc. by system.Can form frequency conversion power unit by rectification module and inversion unit, be applied to the big-power transducer of H bridge tandem type, if wherein rectification module be full-controlled rectifier then big-power transducer can realize four quadrant running.
Described semiconductor switch device is an example with IEGT, but is not limited to IEGT, and it comprises PP IGBT, IGCT and other full-controlled switch device etc.In addition, an IEGT among the figure can be single Zhi Kaiguan device, also can be the serial or parallel connection of many IEGT.
Figure 11 is the electrical structure schematic diagram of the chain type STATCOM of the dihedral connection of H bridge power unit of the present invention; Figure 12 is the electrical structure schematic diagram of the cascaded H bridge high voltage converter of the star connection of H bridge power unit of the present invention.The structure of H bridge power unit can be any in the foregoing description, and is not limited to the foregoing description.
Claims (16)
1. the high-capacity H bridge power unit based on full-controlled switch device IEGT is characterized in that, H bridge power unit, the alternating voltage of output amplitude and frequency adjustable or output amplitude adjustable DC voltage that this power cell is formed based on the IEGT phase module.
2. a kind of high-capacity H bridge power unit according to claim 1 based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that described H bridge power unit is made up of two bridge modules that phase module is formed or includes four IEGT devices that include two IEGT devices.
3. a kind of high-capacity H bridge power unit based on fully-controlled converter injection enhanced gate transistor (IEGT) according to claim 2 is characterized in that, a described phase module comprises two IEGT devices, and two IEGT devices are cascaded, and middle link leads to output; Each phase module comprises that also buffering absorbs circuit and dc filter capacitor, and dc filter capacitor is connected between the positive and negative bus.
4. a kind of high-capacity H bridge power unit according to claim 3 based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that, described buffering absorbs circuit and comprises inductance, resistance, diode and electric capacity, the diode cathode end links to each other with inductance, the diode cathode end links to each other with resistance, and resistance links to each other with inductance; The negative pole end of diode also connects electric capacity, and the electric capacity other end is connected with negative busbar.
5. according to claim 2 or 3 or 4 described a kind of high-capacity H bridge power units based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that described each IEGT device all is parallel with fly-wheel diode, fly-wheel diode can be internal or external two kinds of forms.
6. according to claim 1 or 2 or 3 or 4 described a kind of high-capacity H bridge power units based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that described power cell also comprises the crowbar module, the two ends of crowbar module are connected on the positive and negative dc bus.
7. a kind of high-capacity H bridge power unit according to claim 6 based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that, described crowbar module comprises two kinds of electric current crowbar module and voltage crowbar modules, and electric current crowbar module is composed in series by bidirectional thyristor and resistance; Voltage crowbar module by thyristor and diode inverse parallel after, be in series with resistance.
8. a kind of high-capacity H bridge power unit based on fully-controlled converter injection enhanced gate transistor (IEGT) according to claim 6 is characterized in that described power cell also comprises bypass module, and bypass module is connected in parallel on H bridge power unit output.
9. a kind of high-capacity H bridge power unit according to claim 8 based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that, described bypass module is composed in parallel by thyristor SCR1 and SCR2, the bypass contactor KM of voltage sensor VS, two reverse parallel connections, is parallel to the output of two phase modules.
10. a kind of high-capacity H bridge power unit based on fully-controlled converter injection enhanced gate transistor (IEGT) according to claim 6 is characterized in that described power cell also comprises the copped wave module, and the copped wave module is connected between the positive and negative bus.
11. a kind of high-capacity H bridge power unit according to claim 10 based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that, described copped wave module is in series by full-controlled switch device and brake resistance, full-controlled switch device and brake resistance respectively reverse parallel connection fly-wheel diode.
12. according to Claim 8 or 9 or 10 or 11 described a kind of high-capacity H bridge power units based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that, described power cell also comprises two voltage sensors, one of them voltage sensor two ends is connected on the positive and negative dc bus, is used for the direct voltage of detection power unit; Another voltage sensor is connected the outlet side of H bridge power unit, is used to detect output voltage.
13. according to Claim 8 or 9 or 10 or 11 described a kind of high-capacity H bridge power units based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that, described power cell also comprises a current sensor, is connected on the dc bus, is used to detect the electric current that flows through on the dc bus.
14. according to claim 2 or 3 described a kind of high-capacity H bridge power units based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that, described IEGT switching device can singlely use, and also can be one group of IEGT switching device that a plurality of IEGT switching device serial or parallel connections are formed.
15. a kind of high-capacity H bridge power unit based on fully-controlled converter injection enhanced gate transistor (IEGT) according to claim 14 is characterized in that, described IEGT switching device also can be PP IGBT, IGCT or other full-controlled switch device.
16. according to claim 1 or 2 or 3 or 4 described a kind of high-capacity H bridge power units based on fully-controlled converter injection enhanced gate transistor (IEGT), it is characterized in that described H bridge power unit can be applicable to high voltage converter, high voltage static reacance generator, rolling stock traction convertor, wind-force generating converter, HVDC Light field.
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| CN101976944A (en) * | 2010-11-26 | 2011-02-16 | 山东电力研究院 | Three-phase four-track bridge protection circuit for current output type inverter |
| CN102163926A (en) * | 2010-12-31 | 2011-08-24 | 中电普瑞科技有限公司 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
| CN102403886A (en) * | 2011-11-03 | 2012-04-04 | 南方电网科学研究院有限责任公司 | Method for protecting direct current line transient short-circuit fault of modular multiple-level converter |
| CN103051207A (en) * | 2012-07-31 | 2013-04-17 | 广东电网公司东莞供电局 | Injection enhanced gate transistor (IEGT)-based high-capacity water-cooled modular H-bridge structure for converter |
| CN103138542A (en) * | 2011-11-30 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Four-quadrant chopping power assembly and converter cabinet |
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| CN101976944B (en) * | 2010-11-26 | 2012-11-28 | 山东电力研究院 | Three-phase four-track bridge protection circuit for current output type inverter |
| CN101976944A (en) * | 2010-11-26 | 2011-02-16 | 山东电力研究院 | Three-phase four-track bridge protection circuit for current output type inverter |
| CN102163926A (en) * | 2010-12-31 | 2011-08-24 | 中电普瑞科技有限公司 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
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| CN103138542B (en) * | 2011-11-30 | 2016-08-10 | 永济新时速电机电器有限责任公司 | Four-quadrant chopped power assembly and converter cabinet |
| CN103138542A (en) * | 2011-11-30 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Four-quadrant chopping power assembly and converter cabinet |
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| CN103051207A (en) * | 2012-07-31 | 2013-04-17 | 广东电网公司东莞供电局 | Injection enhanced gate transistor (IEGT)-based high-capacity water-cooled modular H-bridge structure for converter |
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Application publication date: 20101103 |