CN103107724A - Modularized structure of three-level converter - Google Patents
Modularized structure of three-level converter Download PDFInfo
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- CN103107724A CN103107724A CN2013100329067A CN201310032906A CN103107724A CN 103107724 A CN103107724 A CN 103107724A CN 2013100329067 A CN2013100329067 A CN 2013100329067A CN 201310032906 A CN201310032906 A CN 201310032906A CN 103107724 A CN103107724 A CN 103107724A
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Abstract
The invention discloses a modularized structure of a three-level converter. The three-level converter comprises three single-phase three-level circuits which are linked in parallel. Each single-phase three-level circuit comprises a first insulated gate bipolar transistor (IGBT), a second IGBT, a third IGBT, a fourth IGBT, a first clamping diode and a second clamping diode, wherein the first IGBT, the second IGBT, the third IGBT and the fourth IGBT are fixed on the surface of a water-cooling substrate with a water channel inside. Connection wires of the level circuits are simple through reasonable and symmetric layout and current circuits are reduced to the outmost so that stray inductance of a high-frequency circuit is little in exchanging currents and voltage impact is reduced when the IGBTs are cut off. Meanwhile, the modularized structure of the three-level converter fully takes heat difference of IGBTs of the three-level converters and convenience of water channel design into consideration and a radiating effect of a system is stable.
Description
Technical field
The present invention relates to a kind of power device, relate in particular to a kind of modular construction of three-level current transformer.
Background technology
Along with the development and progress of power electronic technology, current transformer power is more and more higher.In order to improve the efficient of whole system, reduce the thermal losses of system, powerful converter system is tending towards adopting the electric pressure of mesohigh.Development level in view of the current power electronic device, if continue to adopt the topological structure of two level, need the series connection of many power electronic device in the mesohigh occasion, and that the voltage-sharing of Static and dynamic of series connection power electronic device solves is more difficult, thereby reduces the reliability of whole system.Three level topological structures have successfully solved the problem of all pressing owing to having adopted clamp diode, make the power electronic device of low-voltage-grade become possibility in the application of mesohigh converter system.Because the level of clamp capacitor in three level topologys of capacitor-clamped is controlled more complicated, the three level structures that adopt diode clamp in current application more.
The IGBT(insulated gate bipolar transistor) be voltage-sensitive type device, if the stray inductance in commutation circuit is excessive, IGBT might cause overvoltage when turn-offing and damage.Especially the device of three-level current transformer is many, line is complicated, and in tri-level circuit, the rational deployment of power model can effectively reduce commutation circuit, thereby reduces the stray inductance in loop.
Three-level current transformer is operated in inverter mode more, this moment outer tube loss be approximately the inner tube loss 3-4 doubly, so the design of the Homogeneouslly-radiating of power device is also the key point that can system stable operation.
Summary of the invention
The object of the present invention is to provide a kind of modular construction of three-level current transformer, it can reduce current circuit effectively, and guaranteed output device Homogeneouslly-radiating, carries out easily system maintenance and expansion.
The technical scheme that realizes above-mentioned purpose is:
A kind of modular construction of three-level current transformer, described three-level current transformer comprises the single-phase tri-level circuit of three parallel connections, each single-phase tri-level circuit comprises IGBT to the four IGBT, the first clamp diode and the second clamp diode, wherein, the emitter of an IGBT connects respectively the collector electrode of the 2nd IGBT and the negative electrode of the first clamp diode; The emitter of the 2nd IGBT connects the collector electrode of the 3rd IGBT; The emitter of the 3rd IGBT connects respectively the collector electrode of the 4th IGBT and the anode of the second clamp diode; The negative electrode of anodic bonding second clamp diode of the first clamp diode;
For each single-phase tri-level circuit:
Described IGBT to the four IGBT, the first clamp diode and the second clamp diode all are fixed on a surface that includes the water-cooling base plate of water channel;
Described IGBT to the four IGBT are individually fixed in four jiaos of described water-cooling base plate, and take an IGBT and the 2nd IGBT as row, the form setting at an IGBT and the 4th IGBT diagonal angle;
Described the first clamp diode and the second clamp diode are a middle part that is listed as and is fixed in described water-cooling base plate, and the negative electrode of the negative electrode of the first clamp diode and the second clamp diode is correspondingly facing to an IGBT and the 2nd IGBT place side.
The modular construction of above-mentioned three-level current transformer, wherein, described IGBT to the four IGBT all with collector electrode in the inboard, emitter is arranged in the mode in the outside.
The modular construction of above-mentioned three-level current transformer, wherein, described IGBT to the four an IGBT drive installation separately is at the side of each self-electrode.
The modular construction of above-mentioned three-level current transformer, wherein, the described water channel that is built in water-cooling base plate inside comprises vertical inlet channel, top cross water channel, bottom transverse water channel and three vertical cooling water channels, wherein:
Described vertical inlet channel is positioned at the left side of described water-cooling base plate, and its lower port connects a water inlet, and its upper port is connected described top cross water channel;
Described three vertical cooling water channels are connected respectively described top cross water channel and bottom transverse water channel, and one by one corresponding to a described IGBT and the 2nd IGBT column, the first clamp diode and the second clamp diode column and the 3rd IGBT and the 4th IGBT column;
The right output port of described bottom transverse water channel connects a delivery port.
The modular construction of above-mentioned three-level current transformer, wherein, a described IGBT is positioned at the upper left corner or the upper right corner of described water-cooling base plate.
The modular construction of above-mentioned three-level current transformer, wherein, a described IGBT is positioned at the upper right corner of described water-cooling base plate; Described the 2nd IGBT is positioned at the lower right corner of described water-cooling base plate; Described the 3rd IGBT is positioned at the lower left corner of described water-cooling base plate; Described the 4th IGBT is positioned at the upper left corner of described water-cooling base plate; Described the first clamp diode is positioned at the below, middle part of described water-cooling base plate; Described the second clamp diode is positioned at the top, middle part of described water-cooling base plate.
The modular construction of above-mentioned three-level current transformer, wherein,
From the below of described water-cooling base plate, draw with the connecting line of the 3rd IGBT from the 2nd IGBT and exchange lead-out wire;
From the top of described water-cooling base plate, draw the direct current main track from the collector electrode of an IGBT, draw the direct current negative wire from the emitter of the 4th IGBT, draw the direct current center line from the connecting line of the first clamp diode and the second clamp diode.
The modular construction of above-mentioned three-level current transformer, wherein, a described IGBT is positioned at the lower left corner of described water-cooling base plate; The 2nd IGBT is positioned at the upper left corner of described water-cooling base plate; The 3rd IGBT is positioned at the upper right corner of described water-cooling base plate; The 4th IGBT is positioned at the lower right corner of described water-cooling base plate; The first clamp diode is positioned at the top, middle part of described water-cooling base plate; The second clamp diode is positioned at the below, middle part of described water-cooling base plate.
The modular construction of above-mentioned three-level current transformer, wherein,
From the top of described water-cooling base plate, draw with the connecting line of the 3rd IGBT from second and exchange lead-out wire;
From the below of described water-cooling base plate, draw the direct current main track from the collector electrode of an IGBT, draw the direct current negative wire from the emitter of the 4th IGBT, draw the direct current center line from the connecting line of the first clamp diode and the second clamp diode.
The invention has the beneficial effects as follows: the present invention is by with each power device layout reasonably on water-cooling base plate, make the power device of upper and lower bridge arm symmetrical, facilitated the design of stack bus bar, reduced substantially commutation circuit, to lower the stray inductance of commutation circuit, cause the possibility of damage because turn-offing overvoltage thereby reduce power device; Simultaneously, in the present invention, the driving of IGBT all is positioned at the outside, convenient debugging and maintenance; Exchange lead-out wire and draw in the bottom, the direct current section is drawn on top, can be in parallel with other easily, is convenient to the expansion of system; And, the design of water channel fully takes into account each IGBT caloric value, cooling water is flowed into by the below can effectively remove bubble, raising radiating effect, and the larger IGBT of caloric value has guaranteed the Homogeneouslly-radiating of power device thereby at first the while cooling water flows through, to guarantee the Systems balanth operation.
Description of drawings
Fig. 1 is the principle schematic of three-level current transformer;
Fig. 2 is the structure chart of the first specific embodiment of the present invention;
Fig. 3 is the structure chart of water channel of the present invention;
Fig. 4 is the structure chart of the second specific embodiment of the present invention.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
See also Fig. 1, three-level current transformer is formed in parallel by direct current main track DC+, direct current center line DC0 and direct current negative wire DC-by three identical single-phase tri-level circuits 200, has A, B, three ac output ends of C.DC support capacitor C 1, C2 are series between DC+, DC0, DC-.
Each single-phase tri-level circuit 200 comprises the upper brachium pontis outer tube IGBT of an IGBT() the upper brachium pontis inner tube IGBT of S1, the 2nd IGBT() brachium pontis inner tube IGBT under S2, the 3rd IGBT() brachium pontis outer tube IGBT under S3, the 4th IGBT() S4, the first clamp diode (upper clamp diode) D1 and the second clamp diode (lower clamp diode) D2, wherein:
The collector electrode of the one IGBT S1 connects direct current main track DC+, and the emitter of an IGBT S1 connects respectively the collector electrode of the 2nd IGBT S2 and the negative electrode of the first clamp diode D1;
The emitter of the 2nd IGBT S2 connects the collector electrode of the 3rd IGBT S3;
The emitter of the 3rd IGBT S3 connects respectively the collector electrode of the 4th IGBT S4 and the anode of the second clamp diode D2;
The emitter of the 4th IGBT S4 connects direct current negative wire DC-;
The anode of the first clamp diode D1 connects respectively negative electrode and the direct current center line DC0 of the second clamp diode D2.
See also Fig. 2, Fig. 3 and Fig. 4, three-level current transformer of the present invention, for each single-phase tri-level circuit 200:
First to fourth IGBT S1-S4 and the first to second clamp diode D1-D2 all are fixed on a surface that includes the water-cooling base plate 1 of water channel 10;
Be with the first and second IGBT S1, S2 the form that row, the third and fourth IGBT S3, S4 are row, the first and the 3rd IGBT S1, S3 diagonal angle and the second and the 4th IGBT S2, S4 diagonal angle, first to fourth IGBT S1-S4 be individually fixed in four jiaos of water-cooling base plate 1;
The first and second clamp diode D1, D2 are a middle part that is listed as and is fixed in water-cooling base plate 1, and the first and second clamp diode D1, D2 negative electrode separately rely on the first and second IGBT S1, S2 place side, and anode separately relies on the third and fourth IGBT S3, S4 place side;
Such layout makes the line between power device (S1-S4 and D1-D2) simple, symmetrical, and current circuit is little, lowers the stray inductance of commutation circuit, reduces power device (S1-S4 and D1-D2) and causes the possibility of damage because turn-offing overvoltage.
First to fourth IGBT S1-S4 all with collector electrode in the inboard, emitter is arranged in the mode in the outside, and first to fourth IGBT S1-S4 driving Dp separately is arranged on the side of each self-electrode, thereby is not covered by stack bus bar, facilitates Installation and Debugging and maintenance.
See also Fig. 3, be the structure chart of water channel 10; Water channel 10 is built in the inside of water-cooling base plate 1, comprises vertical inlet channel 101, top cross water channel 102, bottom transverse water channel 103 and three vertical cooling water channels 104,105,106, wherein:
Three vertical cooling water channels 104,105,106 are connected top cross water channel 102 and bottom transverse water channel 103 parallel with one anotherly, and lay respectively at the below of the first and second IGBT S1, S2 column, the first and second clamp diode D1, D2 column and the third and fourth IGBT S3, S4 column;
The right output port of bottom transverse water channel 103 picks out the mouth of a river 12;
Cooling water is entered by the water inlet 11 of lower-left end, flow into the top of water-cooling base plate 1 through vertical inlet channel 101, thereby effectively remove bubble, improve radiating effect, then flow into top cross water channel 102, three the vertical cooling water channels 104,105,106 of then flowing through from top to bottom meet at bottom transverse water channel 103 at last, flow out through the delivery port 12 of bottom righthand side.because the first and the 4th IGBT S1, the switching frequency of S4 is than the second and the 3rd IGBTS2, the switching frequency of S3 is high, so caloric value is also the second and the 3rd IGBT S2, the 3-4 of S3 doubly, cooling water will be from the first and the 4th IGBT S1, S4 takes out of than the second and the 3rd IGBT S2, the heat that S3 is higher, the first and second clamp diode D1, D2 is owing to having larger loss in reversely restoring process, its caloric value and the second and the 3rd IGBT S2, S3 is suitable, so with the first and the 4th IGBT S1, S4 is arranged in respectively the upper left corner and the upper right corner of water-cooling base plate 1, make cooling water first flow through the first and the 4th IGBT S1, the below of S4, because its water temperature is lower, radiating effect is relatively stronger, guarantee the uniformity of dispelling the heat with this.
See also Fig. 2, be the first specific embodiment of the present invention, wherein, an IGBT S1 is positioned at the upper right corner of water-cooling base plate 1; The 2nd IGBT S2 is positioned at the lower right corner of water-cooling base plate 1; The 3rd IGBT S3 is positioned at the lower left corner of water-cooling base plate 1; The 4th IGBT S4 is positioned at the upper left corner of water-cooling base plate 1; The first clamp diode D1 is positioned at the below, middle part of water-cooling base plate 1; The second clamp diode D2 is positioned at the top, middle part of water-cooling base plate 1; Therefore, the vertical cooling water channel 104 in left side is used for cooling the third and fourth IGBT S3, S4; Middle vertical cooling water channel 105 is used for cooling the first and second clamp diode D1, D2; The vertical cooling water channel 106 on right side is used for cooling the first and second IGBT S1, S2, and cooling water first the flow through below of the first and the 4th IGBT S1, S4, and heat radiation evenly;
And the mounting means of the first and second IGBT S1, S2 is left side collector electrode, right side emitter; The mounting means of the third and fourth IGBT S3, S4 is left side emitter, right side collector electrode; The mounting means of the first and second clamp diode D1, D2 is left side anode, right side negative electrode; First to fourth IGBT S1-S4 driving Dp separately is arranged on the side of each self-electrode, is not covered by stack bus bar; Their line has reduced commutation circuit as shown in Figure 2 substantially; Simultaneously, from the below of water-cooling base plate 1, exchange lead-out wire AC and draw from the connecting line of the second and the 3rd IGBT S2, S3; Top from water-cooling base plate 1, draw direct current main track DC+ from the collector electrode of an IGBT S1, draw direct current negative wire DC-from the emitter of the 4th IGBT S4, draw direct current center line DC from the connecting line of the first and second clamp diode D1, D2, thereby convenience is in parallel with other phases, is beneficial to the expansion of system.
See also Fig. 4, be the second specific embodiment of the present invention, wherein, an IGBT S1 is positioned at the lower left corner of water-cooling base plate 1; The 2nd IGBT S2 is positioned at the upper left corner of water-cooling base plate 1; The 3rd IGBT S3 is positioned at the upper right corner of water-cooling base plate 1; The 4th IGBT S4 is positioned at the lower right corner of water-cooling base plate 1; The first clamp diode D1 is positioned at the top, middle part of water-cooling base plate 1; The second clamp diode D2 is positioned at the below, middle part of water-cooling base plate 1; Therefore, the vertical cooling water channel 104 in left side is used for cooling the first and second IGBT S1, S2; Middle vertical cooling water channel 105 is used for cooling the first and second clamp diode D1, D2; The vertical cooling water channel 106 on right side is used for cooling the third and fourth IGBT S3, S4, and cooling water first the flow through below of the second and the 3rd IGBT S2, S3, and radiating effect is more embodiment illustrated in fig. 3 weaker;
And the mounting means of the first and second IGBT S1, S2 is left side emitter, right side collector electrode; The mounting means of the third and fourth IGBT S3, S4 is left side collector electrode, right side emitter; The mounting means of the first and second clamp diode D1, D2 is left side negative electrode, right side anode; First to fourth IGBT S1-S4 driving Dp separately is arranged on the side of each self-electrode, is not covered by stack bus bar; Their line has reduced commutation circuit as shown in Figure 4 substantially; Simultaneously, from the top of water-cooling base plate 1, exchange lead-out wire AC and draw from the connecting line of the second and the 3rd IGBT S2, S3; Below from water-cooling base plate 1, draw direct current main track DC+ from the collector electrode of an IGBT S1, draw direct current negative wire DC-from the emitter of the 4th IGBT S4, draw direct current center line DC from the connecting line of the first and second clamp diode D1, D2, thereby convenience is in parallel with other phases, is beneficial to the expansion of system.
Claims (9)
1. the modular construction of a three-level current transformer, described three-level current transformer comprises the single-phase tri-level circuit of three parallel connections, each single-phase tri-level circuit comprises IGBT to the four IGBT, the first clamp diode and the second clamp diode, wherein, the emitter of an IGBT connects respectively the collector electrode of the 2nd IGBT and the negative electrode of the first clamp diode; The emitter of the 2nd IGBT connects the collector electrode of the 3rd IGBT; The emitter of the 3rd IGBT connects respectively the collector electrode of the 4th IGBT and the anode of the second clamp diode; The negative electrode of anodic bonding second clamp diode of the first clamp diode;
It is characterized in that, for each single-phase tri-level circuit:
Described IGBT to the four IGBT, the first clamp diode and the second clamp diode all are fixed on a surface that includes the water-cooling base plate of water channel;
Described IGBT to the four IGBT are individually fixed in four jiaos of described water-cooling base plate, and take an IGBT and the 2nd IGBT as row, the form setting at an IGBT and the 4th IGBT diagonal angle;
Described the first clamp diode and the second clamp diode are a middle part that is listed as and is fixed in described water-cooling base plate, and the negative electrode of the negative electrode of the first clamp diode and the second clamp diode is correspondingly facing to an IGBT and the 2nd IGBT place side.
2. the modular construction of three-level current transformer according to claim 1, is characterized in that, described IGBT to the four IGBT all with collector electrode in the inboard, emitter is arranged in the mode in the outside.
3. the modular construction of three-level current transformer according to claim 2, is characterized in that, described IGBT to the four an IGBT drive installation separately is at the side of each self-electrode.
4. the modular construction of according to claim 1 and 2 or 3 described three-level current transformers, it is characterized in that, the described water channel that is built in water-cooling base plate inside comprises vertical inlet channel, top cross water channel, bottom transverse water channel and three vertical cooling water channels, wherein:
Described vertical inlet channel is positioned at the left side of described water-cooling base plate, and its lower port connects a water inlet, and its upper port is connected described top cross water channel;
Described three vertical cooling water channels are connected respectively described top cross water channel and bottom transverse water channel, and one by one corresponding to a described IGBT and the 2nd IGBT column, the first clamp diode and the second clamp diode column and the 3rd IGBT and the 4th IGBT column;
The right output port of described bottom transverse water channel connects a delivery port.
5. the modular construction of three-level current transformer according to claim 4, is characterized in that, a described IGBT is positioned at the upper left corner or the upper right corner of described water-cooling base plate.
6. the modular construction of three-level current transformer according to claim 5, is characterized in that, a described IGBT is positioned at the upper right corner of described water-cooling base plate; Described the 2nd IGBT is positioned at the lower right corner of described water-cooling base plate; Described the 3rd IGBT is positioned at the lower left corner of described water-cooling base plate; Described the 4th IGBT is positioned at the upper left corner of described water-cooling base plate; Described the first clamp diode is positioned at the below, middle part of described water-cooling base plate; Described the second clamp diode is positioned at the top, middle part of described water-cooling base plate.
7. the modular construction of three-level current transformer according to claim 6, is characterized in that,
From the below of described water-cooling base plate, draw with the connecting line of the 3rd IGBT from the 2nd IGBT and exchange lead-out wire;
From the top of described water-cooling base plate, draw the direct current main track from the collector electrode of an IGBT, draw the direct current negative wire from the emitter of the 4th IGBT, draw the direct current center line from the connecting line of the first clamp diode and the second clamp diode.
8. the modular construction of three-level current transformer according to claim 4, is characterized in that, a described IGBT is positioned at the lower left corner of described water-cooling base plate; The 2nd IGBT is positioned at the upper left corner of described water-cooling base plate; The 3rd IGBT is positioned at the upper right corner of described water-cooling base plate; The 4th IGBT is positioned at the lower right corner of described water-cooling base plate; The first clamp diode is positioned at the top, middle part of described water-cooling base plate; The second clamp diode is positioned at the below, middle part of described water-cooling base plate.
9. the modular construction of three-level current transformer according to claim 8, is characterized in that,
From the top of described water-cooling base plate, draw with the connecting line of the 3rd IGBT from second and exchange lead-out wire;
From the below of described water-cooling base plate, draw the direct current main track from the collector electrode of an IGBT, draw the direct current negative wire from the emitter of the 4th IGBT, draw the direct current center line from the connecting line of the first clamp diode and the second clamp diode.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253559A (en) * | 2014-10-13 | 2014-12-31 | 上海电气集团股份有限公司 | Three-level energy storage current transformer |
| CN104300819A (en) * | 2014-09-17 | 2015-01-21 | 思源清能电气电子有限公司 | Three-level three-phase bridge circuit and modular structure thereof |
| CN107911034A (en) * | 2017-12-26 | 2018-04-13 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七二研究所） | A kind of tri-level inversion power module of marine converter |
| CN108512440A (en) * | 2018-05-04 | 2018-09-07 | 北京金风科创风电设备有限公司 | Current conversion device and bipolar current conversion system |
| CN112332682A (en) * | 2021-01-06 | 2021-02-05 | 中国人民解放军海军工程大学 | Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter |
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| WO2012032642A1 (en) * | 2010-09-09 | 2012-03-15 | 三菱電機株式会社 | Power semiconductor module, power conversion apparatus, and railroad vehicle |
| CN202565146U (en) * | 2012-04-13 | 2012-11-28 | 泰安市科耐尔电子发展有限公司 | Built-in type water-cooling heat radiation board for power module |
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| CN104300819A (en) * | 2014-09-17 | 2015-01-21 | 思源清能电气电子有限公司 | Three-level three-phase bridge circuit and modular structure thereof |
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| CN107911034A (en) * | 2017-12-26 | 2018-04-13 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七二研究所） | A kind of tri-level inversion power module of marine converter |
| CN108512440A (en) * | 2018-05-04 | 2018-09-07 | 北京金风科创风电设备有限公司 | Current conversion device and bipolar current conversion system |
| CN112332682A (en) * | 2021-01-06 | 2021-02-05 | 中国人民解放军海军工程大学 | Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter |
| CN112332682B (en) * | 2021-01-06 | 2021-05-07 | 中国人民解放军海军工程大学 | Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter |
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Application publication date: 20130515 |